Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (354110) > Сторінка 1116 з 5902
| Фото | Назва | Виробник | Інформація |
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| JANTX2N2323AS | Microchip Technology |
 Description: SCR 50V TO5Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 600 mV Current - Off State (Max): 10 µA Supplier Device Package: TO-5 Part Status: Obsolete Voltage - Off State: 50 V Grade: Military Qualification: MIL-PRF-19500/276 |
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| 2N3821 | Microchip Technology |
Description: JFET N-CH 50V TO72 Packaging: Bulk Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V Voltage - Breakdown (V(BR)GSS): 50 V Supplier Device Package: TO-72 Grade: Military Drain to Source Voltage (Vdss): 50 V Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V Qualification: MIL-PRF-19500/375 |
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2N4092 | Microchip Technology |
Description: N CHANNEL JFET |
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| 2N4092UB | Microchip Technology | Description: JFET N-CHAN 40V 3SMD |
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2N4093 | Microchip Technology |
Description: JFET N-CH 40V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-18 Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Resistance - RDS(On): 80 Ohms Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V |
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2N4093UB | Microchip Technology |
Description: JFET N-CH 40V 3UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: UB Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Resistance - RDS(On): 80 Ohms Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V |
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| 2N4391UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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| 2N4392UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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| 2N4393UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk |
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2N4449UB | Microchip Technology |
Description: TRANS NPN 20V UB Packaging: Bulk Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: UB Grade: Military Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW Qualification: MIL-PRF-19500/317 |
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2N4856UB | Microchip Technology |
Description: JFET N-CH 40V Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: UB Part Status: Active Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Resistance - RDS(On): 25 Ohms Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V |
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2N4857UB | Microchip Technology |
Description: JFET N-CH 40V Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: UB Part Status: Active Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Resistance - RDS(On): 40 Ohms Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V |
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2N4858UB | Microchip Technology |
Description: JFET N-CH 40V 3UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: UB Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Resistance - RDS(On): 60 Ohms Voltage - Cutoff (VGS off) @ Id: 4 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V |
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2N4859UB | Microchip Technology |
Description: JFET N-CH 30V Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 360 mW Resistance - RDS(On): 25 Ohms Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V |
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2N4860UB | Microchip Technology |
Description: JFET N-CH 30V Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 360 mW Resistance - RDS(On): 40 Ohms Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V |
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2N5114 | Microchip Technology |
Description: JFET P-CH 30V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 75 Ohms Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V Grade: Military Qualification: MIL-PRF-19500 |
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2N5114UB | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Part Status: Discontinued at Digi-Key Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 75 Ohms Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V Grade: Military Qualification: MIL-PRF-19500 |
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| 2N5427 | Microchip Technology |
Description: TRANS PNP 80V 7A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 7A, 80V Supplier Device Package: TO-66 Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
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JANS2N2222AUBC | Microchip Technology |
Description: TRANS NPN 50V 0.8A 3SMD Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UBC Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
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JANS2N2369AUBC | Microchip Technology |
Description: TRANS NPN 20V 3SMD Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: UBC Part Status: Active Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW Grade: Military Qualification: MIL-PRF-19500/317 |
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JANSH2N2222A | Microchip Technology |
Description: TRANS NPN 50V 0.8A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
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MV2N4092 | Microchip Technology |
Description: N CHANNEL JFET |
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| MV2N4391 | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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| MV2N4391UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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| MV2N4392 | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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| MV2N4392UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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| MV2N4393 | Microchip Technology |
Description: JFET N-CH Packaging: Bulk |
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| MV2N4393UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk |
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MV2N4856 | Microchip Technology |
Description: JFET N-CH 40V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Resistance - RDS(On): 25 Ohms Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V Grade: Military Qualification: MIL-PRF-19500/385 |
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| MV2N4856UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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MV2N4857 | Microchip Technology |
Description: JFET N-CH 40V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Resistance - RDS(On): 40 Ohms Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V |
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| MV2N4857UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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MV2N4858 | Microchip Technology |
Description: JFET N-CH 40V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Resistance - RDS(On): 60 Ohms Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V Qualification: MIL-PRF-19500/385 |
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| MV2N4858UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk |
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MV2N4859 | Microchip Technology |
Description: JFET N-CH 30V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 360 mW Resistance - RDS(On): 25 Ohms Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V Grade: Military Qualification: MIL-PRF-19500/385 |
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| MV2N4859UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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MV2N4860 | Microchip Technology |
Description: JFET N-CH 30V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-18 Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 360 mW Resistance - RDS(On): 40 Ohms Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V Grade: Military Qualification: MIL-PRF-19500/385 |
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| MV2N4860UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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MV2N4861 | Microchip Technology |
Description: JFET N-CH 30V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 360 mW Resistance - RDS(On): 60 Ohms Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V Grade: Military Qualification: MIL-PRF-19500/385 |
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MV2N5114 | Microchip Technology |
Description: JFET P-CH 30V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 75 Ohms Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V Grade: Military Qualification: MIL-PRF-19500 |
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| MX2N4391 | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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| MX2N4391UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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| MX2N4392 | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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| MX2N4392UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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| MX2N4393 | Microchip Technology |
Description: JFET N-CH Packaging: Bulk |
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| MX2N4393UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk |
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MX2N4856 | Microchip Technology |
Description: JFET N-CH 40V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Resistance - RDS(On): 25 Ohms Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V Grade: Military Qualification: MIL-PRF-19500/385 |
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| MX2N4856UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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MX2N4857 | Microchip Technology |
Description: JFET N-CH 40V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Resistance - RDS(On): 40 Ohms Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V Grade: Military Qualification: MIL-PRF-19500/385 |
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| MX2N4857UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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MX2N4858 | Microchip Technology |
Description: JFET N-CH 40V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V Qualification: MIL-PRF-19500/385 |
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| MX2N4858UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk |
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MX2N4859 | Microchip Technology |
Description: JFET N-CH 30V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 360 mW Resistance - RDS(On): 25 Ohms Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V Grade: Military Qualification: MIL-PRF-19500/385 |
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MX2N4860 | Microchip Technology |
Description: JFET N-CH 30V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 360 mW Resistance - RDS(On): 40 Ohms Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V Grade: Military Qualification: MIL-PRF-19500/385 |
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| MX2N4860UB | Microchip Technology |
Description: JFET N-CH Packaging: Bulk Part Status: Active |
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MX2N4861 | Microchip Technology |
Description: JFET N-CH 30V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 360 mW Resistance - RDS(On): 60 Ohms Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V Grade: Military Qualification: MIL-PRF-19500/385 |
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MX2N5114 | Microchip Technology |
Description: JFET P-CH 30V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 75 Ohms Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V Grade: Military Qualification: MIL-PRF-19500 |
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MX2N5116 | Microchip Technology |
Description: JFET P-CH 30V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-18 Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 175 Ohms Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V Grade: Military Qualification: MIL-PRF-19500 |
товар відсутній |
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| PIC6007 | Microchip Technology |
Description: POWER INTEGRATED CIRCUIT Packaging: Bulk |
товар відсутній |
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| PIC601 | Microchip Technology |
Description: IC SWITCHING REGULATOR TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Supply: 80V Applications: Switching Regulator Supplier Device Package: TO-66 Part Status: Active |
товар відсутній |
| JANTX2N2323AS |
|
Виробник: Microchip Technology
Description: SCR 50V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 50 V
Grade: Military
Qualification: MIL-PRF-19500/276
Description: SCR 50V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 50 V
Grade: Military
Qualification: MIL-PRF-19500/276
товар відсутній
| 2N3821 |
|
Виробник: Microchip Technology
Description: JFET N-CH 50V TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-72
Grade: Military
Drain to Source Voltage (Vdss): 50 V
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
Qualification: MIL-PRF-19500/375
Description: JFET N-CH 50V TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-72
Grade: Military
Drain to Source Voltage (Vdss): 50 V
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
Qualification: MIL-PRF-19500/375
товар відсутній
| 2N4093 |
|
Виробник: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 80 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 80 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
товар відсутній
| 2N4093UB |
Виробник: Microchip Technology
Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 80 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 80 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
товар відсутній
| 2N4391UB |
товар відсутній
| 2N4392UB |
товар відсутній
| 2N4449UB |
|
Виробник: Microchip Technology
Description: TRANS NPN 20V UB
Packaging: Bulk
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 20V UB
Packaging: Bulk
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
товар відсутній
| 2N4856UB |
Виробник: Microchip Technology
Description: JFET N-CH 40V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Description: JFET N-CH 40V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
товар відсутній
| 2N4857UB |
Виробник: Microchip Technology
Description: JFET N-CH 40V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Description: JFET N-CH 40V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
товар відсутній
| 2N4858UB |
Виробник: Microchip Technology
Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Description: JFET N-CH 40V 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
товар відсутній
| 2N4859UB |
Виробник: Microchip Technology
Description: JFET N-CH 30V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Description: JFET N-CH 30V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
товар відсутній
| 2N4860UB |
|
Виробник: Microchip Technology
Description: JFET N-CH 30V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Description: JFET N-CH 30V
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
товар відсутній
| 2N5114 |
|
Виробник: Microchip Technology
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| 2N5114UB |
|
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Discontinued at Digi-Key
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Discontinued at Digi-Key
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| 2N5427 |
Виробник: Microchip Technology
Description: TRANS PNP 80V 7A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 7A, 80V
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Description: TRANS PNP 80V 7A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 7A, 80V
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
товар відсутній
| JANS2N2222AUBC |
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A 3SMD
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A 3SMD
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
товар відсутній
| JANS2N2369AUBC |
|
Виробник: Microchip Technology
Description: TRANS NPN 20V 3SMD
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UBC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 20V 3SMD
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UBC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
товар відсутній
| JANSH2N2222A |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
товар відсутній
| MV2N4391 |
товар відсутній
| MV2N4391UB |
товар відсутній
| MV2N4392 |
товар відсутній
| MV2N4392UB |
товар відсутній
| MV2N4856 |
|
Виробник: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
товар відсутній
| MV2N4856UB |
товар відсутній
| MV2N4857 |
|
Виробник: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
товар відсутній
| MV2N4857UB |
товар відсутній
| MV2N4858 |
|
Виробник: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Qualification: MIL-PRF-19500/385
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Qualification: MIL-PRF-19500/385
товар відсутній
| MV2N4859 |
|
Виробник: Microchip Technology
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
товар відсутній
| MV2N4859UB |
товар відсутній
| MV2N4860 |
|
Виробник: Microchip Technology
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
товар відсутній
| MV2N4860UB |
товар відсутній
| MV2N4861 |
|
Виробник: Microchip Technology
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
товар відсутній
| MV2N5114 |
|
Виробник: Microchip Technology
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MX2N4391 |
товар відсутній
| MX2N4391UB |
товар відсутній
| MX2N4392 |
товар відсутній
| MX2N4392UB |
товар відсутній
| MX2N4856 |
|
Виробник: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
товар відсутній
| MX2N4856UB |
товар відсутній
| MX2N4857 |
|
Виробник: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
товар відсутній
| MX2N4857UB |
товар відсутній
| MX2N4858 |
|
Виробник: Microchip Technology
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Qualification: MIL-PRF-19500/385
Description: JFET N-CH 40V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Qualification: MIL-PRF-19500/385
товар відсутній
| MX2N4859 |
|
Виробник: Microchip Technology
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
товар відсутній
| MX2N4860 |
|
Виробник: Microchip Technology
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
товар відсутній
| MX2N4860UB |
товар відсутній
| MX2N4861 |
|
Виробник: Microchip Technology
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
Description: JFET N-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/385
товар відсутній
| MX2N5114 |
|
Виробник: Microchip Technology
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MX2N5116 |
|
Виробник: Microchip Technology
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| PIC6007 |
товар відсутній
| PIC601 |
|
Виробник: Microchip Technology
Description: IC SWITCHING REGULATOR TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 80V
Applications: Switching Regulator
Supplier Device Package: TO-66
Part Status: Active
Description: IC SWITCHING REGULATOR TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 80V
Applications: Switching Regulator
Supplier Device Package: TO-66
Part Status: Active
товар відсутній