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1N6342US Microchip Technology 11083-lds-0193-1-datasheet Description: DIODE ZENER
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1N7048-1 Microchip Technology Description: SCHOTTKY RECTIFIER
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1N7049-1 Microchip Technology Description: SCHOTTKY RECTIFIER
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1N7050-1 1N7050-1 Microchip Technology Description: DIODE ZENER 4.8V 250MW DO7
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 250 mW
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1N7050UR-1 1N7050UR-1 Microchip Technology Description: DIODE ZENER 4.8V 250MW DO213AB
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 250 mW
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1N7051-1 1N7051-1 Microchip Technology Description: DIODE ZENER 4.8V 250MW DO7
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 250 mW
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1N7051UR-1 1N7051UR-1 Microchip Technology Description: DIODE ZENER 4.8V 250MW DO213AB
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 250 mW
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1N7052-1 1N7052-1 Microchip Technology Description: DIODE ZENER 4.8V 250MW DO7
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 250 mW
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1N7053-1 1N7053-1 Microchip Technology Description: DIODE ZENER 4.8V 250MW DO7
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 250 mW
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1N7054-1 1N7054-1 Microchip Technology Description: DIODE ZENER 4.8V 250MW DO7
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 250 mW
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1N7055-1 1N7055-1 Microchip Technology Description: DIODE ZENER 4.8V 250MW DO7
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 250 mW
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1N746AUR-1 1N746AUR-1 Microchip Technology 131822-lds-0288-1-datasheet Description: DIODE ZENER 3.3V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N747 1N747 Microchip Technology 10928-sa5-7-datasheet Description: DIODE ZENER
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N747AUR-1 1N747AUR-1 Microchip Technology 131822-lds-0288-1-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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1N749 1N749 Microchip Technology 10928-sa5-7-datasheet Description: DIODE ZENER
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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1N749AUR-1 1N749AUR-1 Microchip Technology 131822-lds-0288-1-datasheet Description: DIODE ZENER 4.3V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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1N750 1N750 Microchip Technology 10928-sa5-7-datasheet Description: DIODE ZENER 4.7V 500MW DO7
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
3+141.31 грн
100+125.69 грн
Мінімальне замовлення: 3
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1N750AUR-1 1N750AUR-1 Microchip Technology 131822-lds-0288-1-datasheet Description: DIODE ZENER 4.7V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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1N751AUR-1 1N751AUR-1 Microchip Technology 131822-lds-0288-1-datasheet Description: DIODE ZENER 5.1V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N752AUR-1 Microchip Technology 131822-lds-0288-1-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
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1N754AUR-1 Microchip Technology 131822-lds-0288-1-datasheet Description: DIODE ZENER
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1N755AUR-1 Microchip Technology 131822-lds-0288-1-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 5 V
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1N758A-1 1N758A-1 Microchip Technology 10928-sa5-7-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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1N758AUR-1 Microchip Technology 131822-lds-0288-1-datasheet Description: DIODE ZENER
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1N759AUR-1 Microchip Technology 131822-lds-0288-1-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9 V
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1N821 1N821 Microchip Technology 10940-sa6-3-datasheet Description: DIODE ZENER DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
2+265.16 грн
Мінімальне замовлення: 2
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1N937A 1N937A Microchip Technology 125410-lds-0155-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
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1N937B 1N937B Microchip Technology 125410-lds-0155-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500 mW
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
1+695.45 грн
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1N937BUR-1 Microchip Technology 122690-lds-0158-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N938BUR-1 Microchip Technology 122690-lds-0158-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N944 Microchip Technology 10947-sa6-9-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
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1N944A 1N944A Microchip Technology 10947-sa6-9-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
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2N1613A Microchip Technology Description: TRANS NPN 30V 0.5A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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2N1613L 2N1613L Microchip Technology 123516-lds-0200-datasheet Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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2N1702 Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Part Status: Active
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2N1711S 2N1711S Microchip Technology 6017-2n1711-datasheet Description: TRANS NPN 30V 0.5A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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2N2102S 2N2102S Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Part Status: Active
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2N2920U 2N2920U Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
на замовлення 94 шт:
термін постачання 21-31 дні (днів)
1+3708.27 грн
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2N2945A Microchip Technology 124373-lds-0236-datasheet Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
Supplier Device Package: TO-46
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
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2N3440UA 2N3440UA Microchip Technology 125353-lds-0022-3-datasheet Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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2N3506A 2N3506A Microchip Technology 124336-lds-0016-datasheet Description: TRANS NPN 40V 3A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N3506AL 2N3506AL Microchip Technology 124335-lds-0016-1-datasheet Description: TRANS NPN 40V 3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N3506L 2N3506L Microchip Technology 124335-lds-0016-1-datasheet Description: TRANS NPN 40V 3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N3507 Microchip Technology 124336-lds-0016-datasheet Description: NPN POWER SILICON TRANSISTORS
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2N3507AL 2N3507AL Microchip Technology 124335-lds-0016-1-datasheet Description: TRANS NPN 50V 3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 1V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2N3507L 2N3507L Microchip Technology 124335-lds-0016-1-datasheet Description: TRANS NPN 50V 3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 1V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2N3634 2N3634 Microchip Technology 8968-lds-0156-datasheet Description: TRANS PNP 140V 1A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
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2N3637 2N3637 Microchip Technology 8968-lds-0156-datasheet Description: TRANS PNP 175V 1A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
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2N3740 2N3740 Microchip Technology 6051-2n3740-datasheet Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
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2N3740A 2N3740A Microchip Technology 10077-msc1040-datasheet Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
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2N3741 2N3741 Microchip Technology 6051-2n3740-datasheet Description: TRANS PNP 80V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
на замовлення 668 шт:
термін постачання 21-31 дні (днів)
1+1030.47 грн
100+921.50 грн
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2N3741A 2N3741A Microchip Technology 10079-msc1042-datasheet Description: TRANS PNP 80V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
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2N3867 Microchip Technology 77282-lds-0170-datasheet Description: TRANS PNP 40V 0.003A TO5
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N3867S 2N3867S Microchip Technology 77282-lds-0170-datasheet Description: TRANS PNP 40V 0.003A TO39
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N3868S 2N3868S Microchip Technology 77282-lds-0170-datasheet Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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2N3879 2N3879 Microchip Technology 6066-2n3879-datasheet Description: TRANS NPN 75V 7A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A
Current - Collector Cutoff (Max): 4mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 35 W
на замовлення 153 шт:
термін постачання 21-31 дні (днів)
1+1602.87 грн
100+1433.00 грн
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2N3902 2N3902 Microchip Technology 6068-2n3902-datasheet Description: NPN TRANSISTOR
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2N4231 2N4231 Microchip Technology Description: PNP TRANSISTOR
Packaging: Bulk
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2N4232A 2N4232A Microchip Technology Description: PNP TRANSISTOR
Packaging: Bulk
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2N4233 2N4233 Microchip Technology Description: PNP TRANSISTOR
Packaging: Bulk
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1N6342US 11083-lds-0193-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
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1N7048-1
Виробник: Microchip Technology
Description: SCHOTTKY RECTIFIER
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1N7049-1
Виробник: Microchip Technology
Description: SCHOTTKY RECTIFIER
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1N7050-1
1N7050-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.8V 250MW DO7
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 250 mW
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1N7050UR-1
1N7050UR-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.8V 250MW DO213AB
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 250 mW
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1N7051-1
1N7051-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.8V 250MW DO7
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 250 mW
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1N7051UR-1
1N7051UR-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.8V 250MW DO213AB
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 250 mW
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1N7052-1
1N7052-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.8V 250MW DO7
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 250 mW
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1N7053-1
1N7053-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.8V 250MW DO7
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 250 mW
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1N7054-1
1N7054-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.8V 250MW DO7
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 250 mW
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1N7055-1
1N7055-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.8V 250MW DO7
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.8 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 250 mW
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1N746AUR-1 131822-lds-0288-1-datasheet
1N746AUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 3.3V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N747 10928-sa5-7-datasheet
1N747
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N747AUR-1 131822-lds-0288-1-datasheet
1N747AUR-1
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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1N749 10928-sa5-7-datasheet
1N749
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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1N749AUR-1 131822-lds-0288-1-datasheet
1N749AUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.3V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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1N750 10928-sa5-7-datasheet
1N750
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO7
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.31 грн
100+125.69 грн
Мінімальне замовлення: 3
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1N750AUR-1 131822-lds-0288-1-datasheet
1N750AUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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1N751AUR-1 131822-lds-0288-1-datasheet
1N751AUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N752AUR-1 131822-lds-0288-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
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1N754AUR-1 131822-lds-0288-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
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1N755AUR-1 131822-lds-0288-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 5 V
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1N758A-1 10928-sa5-7-datasheet
1N758A-1
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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1N758AUR-1 131822-lds-0288-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
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1N759AUR-1 131822-lds-0288-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9 V
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1N821 10940-sa6-3-datasheet
1N821
Виробник: Microchip Technology
Description: DIODE ZENER DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+265.16 грн
Мінімальне замовлення: 2
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1N937A 125410-lds-0155-datasheet
1N937A
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
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1N937B 125410-lds-0155-datasheet
1N937B
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500 mW
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+695.45 грн
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1N937BUR-1 122690-lds-0158-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N938BUR-1 122690-lds-0158-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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1N944 10947-sa6-9-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
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1N944A 10947-sa6-9-datasheet
1N944A
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
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2N1613A
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.5A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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2N1613L 123516-lds-0200-datasheet
2N1613L
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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2N1702
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Part Status: Active
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2N1711S 6017-2n1711-datasheet
2N1711S
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.5A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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2N2102S
2N2102S
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Part Status: Active
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2N2920U
2N2920U
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
на замовлення 94 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3708.27 грн
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2N2945A 124373-lds-0236-datasheet
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
Supplier Device Package: TO-46
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
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2N3440UA 125353-lds-0022-3-datasheet
2N3440UA
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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2N3506A 124336-lds-0016-datasheet
2N3506A
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N3506AL 124335-lds-0016-1-datasheet
2N3506AL
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N3506L 124335-lds-0016-1-datasheet
2N3506L
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N3507 124336-lds-0016-datasheet
Виробник: Microchip Technology
Description: NPN POWER SILICON TRANSISTORS
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2N3507AL 124335-lds-0016-1-datasheet
2N3507AL
Виробник: Microchip Technology
Description: TRANS NPN 50V 3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 1V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2N3507L 124335-lds-0016-1-datasheet
2N3507L
Виробник: Microchip Technology
Description: TRANS NPN 50V 3A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 1V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2N3634 8968-lds-0156-datasheet
2N3634
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
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2N3637 8968-lds-0156-datasheet
2N3637
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
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2N3740 6051-2n3740-datasheet
2N3740
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
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2N3740A 10077-msc1040-datasheet
2N3740A
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
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2N3741 6051-2n3740-datasheet
2N3741
Виробник: Microchip Technology
Description: TRANS PNP 80V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
на замовлення 668 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1030.47 грн
100+921.50 грн
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2N3741A 10079-msc1042-datasheet
2N3741A
Виробник: Microchip Technology
Description: TRANS PNP 80V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
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2N3867 77282-lds-0170-datasheet
Виробник: Microchip Technology
Description: TRANS PNP 40V 0.003A TO5
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N3867S 77282-lds-0170-datasheet
2N3867S
Виробник: Microchip Technology
Description: TRANS PNP 40V 0.003A TO39
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N3868S 77282-lds-0170-datasheet
2N3868S
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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2N3879 6066-2n3879-datasheet
2N3879
Виробник: Microchip Technology
Description: TRANS NPN 75V 7A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A
Current - Collector Cutoff (Max): 4mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 35 W
на замовлення 153 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1602.87 грн
100+1433.00 грн
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2N3902 6068-2n3902-datasheet
2N3902
Виробник: Microchip Technology
Description: NPN TRANSISTOR
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2N4231
2N4231
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
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2N4232A
2N4232A
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
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2N4233
2N4233
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
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