Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (336751) > Сторінка 1185 з 5613
| Фото | Назва | Виробник | Інформація |
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| DSC1103DI2-048.0000T | Microchip Technology |
 Description: MEMS OSC XO 48.0000MHZ LVDS SMD |
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| DSC1103DL1-025.0013T | Microchip Technology |
Description: MEMS OSC XO 25.0013MHZ LVDS SMD |
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| DSC1103DL2-025.0012T | Microchip Technology |
Description: MEMS OSC XO 25.0012MHZ LVDS SMD Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: LVDS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Frequency Stability: ±25ppm Voltage - Supply: 2.25V ~ 3.63V Current - Supply (Max): 32mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 25.0012 MHz Base Resonator: MEMS |
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| DSC1103DL2-147.4560T | Microchip Technology |
Description: MEMS OSC XO 147.4560MHZ LVDS SMD |
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| DSC1121DM2-019.2000T | Microchip Technology |
Description: MEMS OSC XO 19.2000MHZ CMOS SMD |
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-2.50-mm-x-2.00-mm.jpg "DSC1121DM2-026.0000T") |
DSC1121DM2-026.0000T | Microchip Technology |
Description: MEMS OSC XO 26.0000MHZ CMOS SMD |
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| DSC1121DM3-032.0000T | Microchip Technology |
Description: MEMS OSC XO 32.0000MHZ CMOS SMD |
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| DSC1124CI1-100.0000T | Microchip Technology |
Description: MEMS OSC XO 100.0000MHZ HCSL SMD |
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| DSC1121AL5-010.0000T | Microchip Technology |
Description: MEMS OSC XO 10.0000MHZ CMOS SMD |
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DSC2011FI2-F0042 | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 14SMD |
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DSC1001DL2-016.3690 | Microchip Technology |
Description: MEMS OSC XO 16.3690MHZ CMOS SMD Packaging: Tube Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Frequency Stability: ±25ppm Voltage - Supply: 1.8V ~ 3.3V Ratings: AEC-Q100 Current - Supply (Max): 6.5mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 16.369 MHz Base Resonator: MEMS |
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| DSC6083JI2A-032K678 | Microchip Technology |
Description: MEMS OSC XO 32.6780KHZ CMOS SMD |
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| DSC6301JI1BA-033.0000 | Microchip Technology |
Description: MEMS OSC XO 33.0000MHZ LVCMOS Packaging: Tube Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: LVCMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 3mA (Typ) Height - Seated (Max): 0.035" (0.89mm) Part Status: Obsolete Frequency: 33 MHz Base Resonator: MEMS |
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| DSC1101DM1-007.3700 | Microchip Technology |
Description: MEMS OSC XO 7.3700MHZ CMOS SMD |
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| DSC1101DM1-032.0000 | Microchip Technology |
Description: MEMS OSC XO 32.0000MHZ CMOS SMD |
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| DSC1121DM2-019.2000 | Microchip Technology |
Description: MEMS OSC XO 19.2000MHZ CMOS SMD |
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DSC1121DM2-026.0000 | Microchip Technology |
Description: MEMS OSC XO 26.0000MHZ CMOS SMD |
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| DSC1121DM3-032.0000 | Microchip Technology |
Description: MEMS OSC XO 32.0000MHZ CMOS SMD |
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| DSC1124CI1-100.0000 | Microchip Technology |
Description: MEMS OSC XO 100.0000MHZ HCSL SMD |
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| DSC1121AL5-010.0000 | Microchip Technology |
Description: MEMS OSC XO 10.0000MHZ CMOS SMD |
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PD-IM-7608M | Microchip Technology |
Description: COMPACT EVB 8 PORTS EVBBASED PD6 Packaging: Bag Function: Power Over Ethernet (PoE) Type: Power Management Utilized IC / Part: PD69208M Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Part Status: Active |
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PD-IM-7608M-2 | Microchip Technology |
Description: DUAL PD-PSE EVB FINALASSY Packaging: Bag Function: Power Over Ethernet (PoE) Type: Power Management Utilized IC / Part: PD69208M Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Part Status: Active |
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1N4101D-1 | Microchip Technology |
Description: DIODE ZENER 8.2V 500MW DO35 Packaging: Bag Tolerance: ±1% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 6.3 V |
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| 1N4624DUR-1 | Microchip Technology |
Description: DIODE ZENER 4.7V 500MW DO213AA Packaging: Bag Tolerance: ±1% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 1550 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
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| 1N4742AE3 | Microchip Technology |
Description: DIODE ZENER Packaging: Bag Part Status: Active |
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1N4744AGE3 | Microchip Technology |
Description: DIODE ZENER 15V 1W DO41 Packaging: Bag Tolerance: ±5% Package / Case: DO-204AL, DO041, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 14 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V |
на замовлення 79 шт: термін постачання 21-31 дні (днів) |
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| 1N4745AE3 | Microchip Technology |
Description: DIODE ZENER Packaging: Bag Part Status: Active |
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| 1N4746AE3 | Microchip Technology |
Description: DIODE ZENER Packaging: Bag Part Status: Active |
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| 1N4747AE3 | Microchip Technology |
Description: DIODE ZENER Packaging: Bag Part Status: Active |
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1N4747AGE3 | Microchip Technology |
Description: DIODE ZENER 20V 1W DO41 Packaging: Bag Tolerance: ±5% Package / Case: DO-204AL, DO041, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V |
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| 1N4753AE3 | Microchip Technology |
Description: DIODE ZENER Packaging: Bag Part Status: Active |
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| 1N4754AE3 | Microchip Technology |
Description: DIODE ZENER Packaging: Bag Part Status: Active |
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1N4754AGE3 | Microchip Technology |
Description: DIODE ZENER 39V 1W DO41 Packaging: Bag Tolerance: ±5% Package / Case: DO-204AL, DO041, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V |
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| 1N4756AE3 | Microchip Technology |
Description: DIODE ZENER Packaging: Bag Part Status: Active |
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1N4756AGE3 | Microchip Technology |
Description: DIODE ZENER 47V 1W DO41 Packaging: Bag Tolerance: ±5% Package / Case: DO-204AL, DO041, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 35.8 V |
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-Axial-Microchip.JPG "1N5226BE3") |
1N5226BE3 | Microchip Technology |
Description: DIODE ZENER 3.3V 500MW DO35 Packaging: Bag Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: DO-35 (DO-204AH) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
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1N5228BE3 | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO35 Packaging: Bag Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 23 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
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| 1N5231BUR-1E3 | Microchip Technology |
Description: DIODE ZENER 5.1V 500MW DO213AA Packaging: Bag Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
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1N5239BE3 | Microchip Technology |
Description: DIODE ZENER 9.1V 500MW DO35 Packaging: Bag Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 7 V |
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| 1N5248BUR-1E3 | Microchip Technology |
Description: DIODE ZENER 18V 500MW DO213AA Packaging: Bag Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 21 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 14 V |
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| 1N5271BE3 | Microchip Technology |
Description: DIODE ZENER 100V 500MW DO35 |
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1N5280BE3 | Microchip Technology |
Description: DIODE ZENER 190V 500MW DO35 Packaging: Bag Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 190 V Impedance (Max) (Zzt): 2400 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 144 V |
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1N746AE3 | Microchip Technology |
Description: DIODE ZENER 3.3V 500MW DO35 |
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1N938B-1 | Microchip Technology |
Description: DIODE ZENER 8.55V 500MW DO35 Packaging: Bag Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 8.55 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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2N2432AUB | Microchip Technology |
Description: TRANS NPN 45V 0.1A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 360 mW |
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2N2432UB | Microchip Technology |
Description: TRANS NPN 30V 0.1A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 360 mW |
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~U4~3.JPG "2N3440U4") |
2N3440U4 | Microchip Technology |
Description: TRANS NPN 250V 1A U4 Packaging: Tray Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: U4 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 5 W |
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CDLL4625C | Microchip Technology |
Description: DIODE ZENER 5.1V 500MW DO213AA Packaging: Bag Tolerance: ±2% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 1500 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 3 V |
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| JANSR2N2484UB | Microchip Technology |
Description: TRANS Packaging: Bulk |
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JANSR2N2907AUB | Microchip Technology |
Description: TRANS PNP 60V 0.6A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/291 |
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| JANSR2N3501U4 | Microchip Technology |
Description: BJTS Packaging: Bulk |
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JANTX1N5819UR-1 | Microchip Technology |
Description: DIODE SCHOTTKY 45V 1A DO213AB Packaging: Bag Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB (MELF, LL41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V Grade: Military Qualification: MIL-PRF-19500/586 |
на замовлення 296 шт: термін постачання 21-31 дні (днів) |
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JANTXV1N5819UR-1 | Microchip Technology |
Description: DIODE SCHOTTKY 45V 1A DO213AB Packaging: Bag Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB (MELF, LL41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V Grade: Military Qualification: MIL-PRF-19500/586 |
на замовлення 188 шт: термін постачання 21-31 дні (днів) |
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MASMBJ24CA/TR | Microchip Technology |
Description: TVS DIODE 24VWM 38.9VC SMBJ Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 15.4A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
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| MASMBJ33A/TR | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC SMBJ Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.3A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: SMBJ (DO-214AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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| MASMBJ36CA/TR | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC SMBJ Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.3A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
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| MASMBJ40CA/TR | Microchip Technology |
Description: TVS DIODE 40VWM 64.5VC SMBJ Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 9.3A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MASMBJ5.0CA/TR | Microchip Technology |
Description: TVS DIODE 5VWM 9.2VC SMBJ Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 65.2A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MASMBJ6.0CA/TR | Microchip Technology |
Description: TVS DIODE 6VWM 10.3VC SMBJ Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 58.3A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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~~2-Top.jpg "MASMCJ11CA/TR") |
MASMCJ11CA/TR | Microchip Technology |
Description: TVS DIODE 11VWM 18.2VC SMCJ Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 82.4A Voltage - Reverse Standoff (Typ): 11V Supplier Device Package: SMCJ (DO-214AB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 12.2V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
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| DSC1103DI2-048.0000T |
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Виробник: Microchip Technology
Description: MEMS OSC XO 48.0000MHZ LVDS SMD
Description: MEMS OSC XO 48.0000MHZ LVDS SMD
товар відсутній
| DSC1103DL1-025.0013T |
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Виробник: Microchip Technology
Description: MEMS OSC XO 25.0013MHZ LVDS SMD
Description: MEMS OSC XO 25.0013MHZ LVDS SMD
товар відсутній
| DSC1103DL2-025.0012T |
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Виробник: Microchip Technology
Description: MEMS OSC XO 25.0012MHZ LVDS SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25.0012 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 25.0012MHZ LVDS SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25.0012 MHz
Base Resonator: MEMS
товар відсутній
| DSC1103DL2-147.4560T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 147.4560MHZ LVDS SMD
Description: MEMS OSC XO 147.4560MHZ LVDS SMD
товар відсутній
| DSC1121DM2-019.2000T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 19.2000MHZ CMOS SMD
Description: MEMS OSC XO 19.2000MHZ CMOS SMD
товар відсутній
| DSC1121DM2-026.0000T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 26.0000MHZ CMOS SMD
Description: MEMS OSC XO 26.0000MHZ CMOS SMD
товар відсутній
| DSC1121DM3-032.0000T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 32.0000MHZ CMOS SMD
Description: MEMS OSC XO 32.0000MHZ CMOS SMD
товар відсутній
| DSC1124CI1-100.0000T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 100.0000MHZ HCSL SMD
Description: MEMS OSC XO 100.0000MHZ HCSL SMD
товар відсутній
| DSC1121AL5-010.0000T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 10.0000MHZ CMOS SMD
Description: MEMS OSC XO 10.0000MHZ CMOS SMD
товар відсутній
| DSC2011FI2-F0042 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 14SMD
Description: MEMS OSC XO 2.25V-3.6V 14SMD
товар відсутній
| DSC1001DL2-016.3690 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 16.3690MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 16.369 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 16.3690MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 16.369 MHz
Base Resonator: MEMS
товар відсутній
| DSC6083JI2A-032K678 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 32.6780KHZ CMOS SMD
Description: MEMS OSC XO 32.6780KHZ CMOS SMD
товар відсутній
| DSC6301JI1BA-033.0000 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 33.0000MHZ LVCMOS
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Obsolete
Frequency: 33 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 33.0000MHZ LVCMOS
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Obsolete
Frequency: 33 MHz
Base Resonator: MEMS
товар відсутній
| DSC1101DM1-007.3700 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 7.3700MHZ CMOS SMD
Description: MEMS OSC XO 7.3700MHZ CMOS SMD
товар відсутній
| DSC1101DM1-032.0000 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 32.0000MHZ CMOS SMD
Description: MEMS OSC XO 32.0000MHZ CMOS SMD
товар відсутній
| DSC1121DM2-019.2000 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 19.2000MHZ CMOS SMD
Description: MEMS OSC XO 19.2000MHZ CMOS SMD
товар відсутній
| DSC1121DM2-026.0000 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 26.0000MHZ CMOS SMD
Description: MEMS OSC XO 26.0000MHZ CMOS SMD
товар відсутній
| DSC1121DM3-032.0000 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 32.0000MHZ CMOS SMD
Description: MEMS OSC XO 32.0000MHZ CMOS SMD
товар відсутній
| DSC1124CI1-100.0000 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 100.0000MHZ HCSL SMD
Description: MEMS OSC XO 100.0000MHZ HCSL SMD
товар відсутній
| DSC1121AL5-010.0000 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 10.0000MHZ CMOS SMD
Description: MEMS OSC XO 10.0000MHZ CMOS SMD
товар відсутній
| PD-IM-7608M |
|
Виробник: Microchip Technology
Description: COMPACT EVB 8 PORTS EVBBASED PD6
Packaging: Bag
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD69208M
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Description: COMPACT EVB 8 PORTS EVBBASED PD6
Packaging: Bag
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD69208M
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
товар відсутній
| PD-IM-7608M-2 |
|
Виробник: Microchip Technology
Description: DUAL PD-PSE EVB FINALASSY
Packaging: Bag
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD69208M
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Description: DUAL PD-PSE EVB FINALASSY
Packaging: Bag
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD69208M
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
товар відсутній
| 1N4101D-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 8.2V 500MW DO35
Packaging: Bag
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6.3 V
Description: DIODE ZENER 8.2V 500MW DO35
Packaging: Bag
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6.3 V
товар відсутній
| 1N4624DUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO213AA
Packaging: Bag
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 1550 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: DIODE ZENER 4.7V 500MW DO213AA
Packaging: Bag
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 1550 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
товар відсутній
| 1N4742AE3 |
товар відсутній
| 1N4744AGE3 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 15V 1W DO41
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Description: DIODE ZENER 15V 1W DO41
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
на замовлення 79 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.32 грн |
| 1N4745AE3 |
товар відсутній
| 1N4746AE3 |
товар відсутній
| 1N4747AE3 |
товар відсутній
| 1N4747AGE3 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 20V 1W DO41
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Description: DIODE ZENER 20V 1W DO41
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
товар відсутній
| 1N4753AE3 |
товар відсутній
| 1N4754AE3 |
товар відсутній
| 1N4754AGE3 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 39V 1W DO41
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V
Description: DIODE ZENER 39V 1W DO41
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V
товар відсутній
| 1N4756AE3 |
товар відсутній
| 1N4756AGE3 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 47V 1W DO41
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 35.8 V
Description: DIODE ZENER 47V 1W DO41
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 35.8 V
товар відсутній
| 1N5226BE3 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 3.3V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: DIODE ZENER 3.3V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
товар відсутній
| 1N5228BE3 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товар відсутній
| 1N5231BUR-1E3 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO213AA
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW DO213AA
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товар відсутній
| 1N5239BE3 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 9.1V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Description: DIODE ZENER 9.1V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
товар відсутній
| 1N5248BUR-1E3 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 18V 500MW DO213AA
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Description: DIODE ZENER 18V 500MW DO213AA
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
товар відсутній
| 1N5280BE3 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 190V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 190 V
Impedance (Max) (Zzt): 2400 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 144 V
Description: DIODE ZENER 190V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 190 V
Impedance (Max) (Zzt): 2400 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 144 V
товар відсутній
| 1N938B-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 8.55V 500MW DO35
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.55 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Description: DIODE ZENER 8.55V 500MW DO35
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.55 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
на замовлення 16 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 553.08 грн |
| 2N2432AUB |
Виробник: Microchip Technology
Description: TRANS NPN 45V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Description: TRANS NPN 45V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
товар відсутній
| 2N2432UB |
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Description: TRANS NPN 30V 0.1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
товар відсутній
| 2N3440U4 |
|
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A U4
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 5 W
Description: TRANS NPN 250V 1A U4
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 5 W
товар відсутній
| CDLL4625C |
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO213AA
Packaging: Bag
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Description: DIODE ZENER 5.1V 500MW DO213AA
Packaging: Bag
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
товар відсутній
| JANSR2N2907AUB |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
товар відсутній
| JANTX1N5819UR-1 |
|
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bag
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bag
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
на замовлення 296 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 613.51 грн |
| 100+ | 548.7 грн |
| JANTXV1N5819UR-1 |
|
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bag
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bag
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
на замовлення 188 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1460.91 грн |
| 100+ | 1305.99 грн |
| MASMBJ24CA/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 24VWM 38.9VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MASMBJ33A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 33VWM 53.3VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
| MASMBJ36CA/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 36VWM 58.1VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
| MASMBJ40CA/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 40VWM 64.5VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MASMBJ5.0CA/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 9.2VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 5VWM 9.2VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
| MASMBJ6.0CA/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 6VWM 10.3VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 58.3A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 6VWM 10.3VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 58.3A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
| MASMCJ11CA/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 11VWM 18.2VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 11VWM 18.2VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товар відсутній