Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (337881) > Сторінка 1253 з 5632
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MSCSM70HM19CT3AG | Microchip Technology |
 Description: PM-MOSFET-SIC-SBD~-SP3F |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
||||||
 |
MSCSM70AM10CT3AG | Microchip Technology |
Description: SIC 2N-CH 700V 241A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 690W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Supplier Device Package: SP3F Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||
 |
MSCSM120HM31CT3AG | Microchip Technology |
Description: SIC 4N-CH 1200V 89A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SP3F Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||
 |
MSCSM70VM10C4AG | Microchip Technology |
Description: PM-MOSFET-SIC-SBD~-SP4 Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 674W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Supplier Device Package: SP4 Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
||||||
 |
MSCSM70TAM19CT3AG | Microchip Technology |
Description: SIC 6N-CH 700V 124A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Supplier Device Package: SP3F |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||
 |
MSCSM70AM07CT3AG | Microchip Technology |
Description: SIC 2N-CH 700V 353A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 988W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Supplier Device Package: SP3F |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||
|
|
MSCSM120TAM31CT3AG | Microchip Technology |
Description: SIC 6N-CH 1200V 89A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SP3F |
товар відсутній |
|||||||
 |
MSCSM120AM11CT3AG | Microchip Technology |
Description: SIC 2N-CH 1200V 254A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.067kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 254A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Supplier Device Package: SP3F |
товар відсутній |
|||||||
|
|
MSCSM120AM08CT3AG | Microchip Technology |
Description: SIC 2N-CH 1200V 337A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.409kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 4mA Supplier Device Package: SP3F Part Status: Active |
товар відсутній |
|||||||
.jpg "MSCSM120HM16CT3AG") |
MSCSM120HM16CT3AG | Microchip Technology |
Description: PM-MOSFET-SIC-SBD~-SP3F |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
||||||
 |
MSCSM70TAM10CTPAG | Microchip Technology |
Description: PM-MOSFET-SIC-SBD~-SP6P |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|||||||
 |
MSCSM70AM025CT6AG | Microchip Technology |
Description: PM-MOSFET-SIC-SBD~-SP6C |
товар відсутній |
|||||||
 |
MSCSM120TAM16CTPAG | Microchip Technology |
Description: PM-MOSFET-SIC-SBD~-SP6P Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 728W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Supplier Device Package: SP6-P Part Status: Active |
товар відсутній |
|||||||
 |
MSCSM120AM042CT6AG | Microchip Technology |
Description: SIC 2N-CH 1200V 495A SP6C Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.031kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Supplier Device Package: SP6C Part Status: Active |
товар відсутній |
|||||||
 |
MSCSM70TAM05TPAG | Microchip Technology |
Description: PM-MOSFET-SIC~-SP6P Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Type: MOSFET Configuration: 3 Phase Inverter Part Status: Active Current: 273 A Voltage: 700 V |
товар відсутній |
|||||||
| MSCSM70AM025CD3AG | Microchip Technology |
Description: SIC 700V 538A D3 Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 538A (Tc) Supplier Device Package: D3 Part Status: Active |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
|
|||||||
 |
MSCSM70AM025CT6LIAG | Microchip Technology |
Description: PM-MOSFET-SIC-SBD~-SP6C LI |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||
 |
MSCSM120AM042CT6LIAG | Microchip Technology |
Description: SIC 2N-CH 1200V 495A SP6C LI Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.031kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Supplier Device Package: SP6C LI Part Status: Active |
товар відсутній |
|||||||
| MSCSM120AM042CD3AG | Microchip Technology |
Description: SIC 2N-CH 1200V 495A D3 Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.031kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Supplier Device Package: D3 Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
|||||||
 |
MSCSM120TAM11CTPAG | Microchip Technology |
Description: SIC 6N-CH 1200V 251A SP6-P Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.042kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Supplier Device Package: SP6-P Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||
|
|
MSCSM120AM027CT6AG | Microchip Technology |
Description: SIC 2N-CH 1200V 733A SP6C Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.97kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Supplier Device Package: SP6C |
товар відсутній |
|||||||
 |
MSCSM120AM027CD3AG | Microchip Technology |
Description: SIC 2N-CH 1200V 733A D3 Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.97kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Supplier Device Package: D3 Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
||||||
 |
MSCSM120AM02CT6LIAG | Microchip Technology |
Description: SIC 2N-CH 1200V 947A SP6C LI Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3.75kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 947A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 12mA Supplier Device Package: SP6C LI Part Status: Active |
товар відсутній |
|||||||
-Axial-Microchip.JPG "1N938A") |
1N938A | Microchip Technology |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 9 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW |
на замовлення 99 шт: термін постачання 21-31 дні (днів) |
|
||||||
-Axial-Microchip.JPG "JAN1N823-1") |
JAN1N823-1 | Microchip Technology |
Description: DIODE ZENER 6.2V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Military Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V Qualification: MIL-PRF-19500/159 |
товар відсутній |
|||||||
 |
AT28HC256-70SU-T | Microchip Technology |
Description: IC EEPROM 256KBIT PAR 28SOIC |
товар відсутній |
|||||||
|
|
AT28HC256-70SU-T | Microchip Technology |
Description: IC EEPROM 256KBIT PAR 28SOIC |
товар відсутній |
|||||||
| JANTXV2N5339U3 | Microchip Technology |
Description: TRANS NPN 100V 5A U-3 Packaging: Bulk Package / Case: TO-276AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Supplier Device Package: U-3 (TO-276AA) Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
товар відсутній |
||||||||
 |
AT27C080-12DC | Microchip Technology |
Description: IC EPROM 8M PARALLEL 32CDIP |
товар відсутній |
|||||||
|
|
AT27C080-90DC | Microchip Technology |
Description: IC EPROM 8M PARALLEL 32CDIP |
товар відсутній |
|||||||
 |
AT27C080-12RC | Microchip Technology |
Description: IC EPROM 8M PARALLEL 32SOIC |
товар відсутній |
|||||||
|
|
AT27C080-12RI | Microchip Technology |
Description: IC EPROM 8M PARALLEL 32SOIC |
товар відсутній |
|||||||
|
|
AT27C080-15RC | Microchip Technology |
Description: IC EPROM 8M PARALLEL 32SOIC |
товар відсутній |
|||||||
|
|
AT27C080-15RI | Microchip Technology |
Description: IC EPROM 8M PARALLEL 32SOIC |
товар відсутній |
|||||||
|
|
AT27C080-90RC | Microchip Technology |
Description: IC EPROM 8M PARALLEL 32SOIC |
товар відсутній |
|||||||
|
|
AT27C080-90RI | Microchip Technology |
Description: IC EPROM 8M PARALLEL 32SOIC |
товар відсутній |
|||||||
| ATMXT1664T3-C2U035 | Microchip Technology |
Description: 1664 CHANNEL TOUCHSCREEN CONTROL Packaging: Tray Package / Case: 162-UFBGA Mounting Type: Surface Mount Interface: I²C, SPI, USB Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Resolution (Bits): 12 b Supplier Device Package: 162-UFBGA (10x5) Voltage Reference: Internal Touchscreen: 2 Wire Capacitive Part Status: Active Current - Supply: 11.28 mA |
товар відсутній |
||||||||
 |
MIC2505YM-TR | Microchip Technology |
Description: IC PWR SWITCH N-CHAN 1:1 8SOIC |
на замовлення 568 шт: термін постачання 21-31 дні (днів) |
|||||||
 |
ATSAML10E16A-AU | Microchip Technology |
Description: IC MCU 32BIT 64KB FLASH 32TQFP Packaging: Tray Package / Case: 32-TQFP Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M23 Data Converters: A/D 10x12b; D/A 1x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 32-TQFP (7x7) Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
на замовлення 5168 шт: термін постачання 21-31 дні (днів) |
|
||||||
 |
DSPIC33CH128MP202-I/SS | Microchip Technology |
Description: IC MCU 16BIT 152KB FLASH 28SSOP Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 180MHz, 200MHz Program Memory Size: 152KB (152K x 8) RAM Size: 20K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH, PRAM Core Processor: dsPIC Data Converters: A/D 23x12b; D/A 4x12b Core Size: 16-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, QEI, WDT Supplier Device Package: 28-SSOP Part Status: Active Number of I/O: 21 DigiKey Programmable: Not Verified |
на замовлення 545 шт: термін постачання 21-31 дні (днів) |
|
||||||
| MSMCJ8.5A/TR | Microchip Technology |
Description: TVS |
товар відсутній |
||||||||
 |
JAN1N5297UR-1 | Microchip Technology |
Description: DIODE CUR REG 100V 1.1MA 500MW Packaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.1mA Voltage - Limiting (Max): 1.35V |
товар відсутній |
|||||||
|
|
JANTXV1N5297UR-1 | Microchip Technology |
Description: DIODE CUR REG 100V 1.1MA 500MW Packaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Discontinued at Digi-Key Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.1mA Voltage - Limiting (Max): 1.35V |
товар відсутній |
|||||||
 |
24FC16T-I/SN | Microchip Technology |
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 450 ns Memory Organization: 2K x 8 DigiKey Programmable: Verified |
на замовлення 3300 шт: термін постачання 21-31 дні (днів) |
|
||||||
|
|
24FC16T-I/SN | Microchip Technology |
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 450 ns Memory Organization: 2K x 8 DigiKey Programmable: Verified |
на замовлення 3300 шт: термін постачання 21-31 дні (днів) |
|
||||||
 |
24FC16H-I/SN | Microchip Technology |
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
на замовлення 1108 шт: термін постачання 21-31 дні (днів) |
|
||||||
|
|
24FC16-I/SN | Microchip Technology |
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 2K x 8 DigiKey Programmable: Verified |
на замовлення 1590 шт: термін постачання 21-31 дні (днів) |
|
||||||
 |
24FC16T-I/MS | Microchip Technology |
Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|||||||
|
|
24FC16T-I/MS | Microchip Technology |
Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|||||||
|
|
24FC16-I/MS | Microchip Technology |
Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP |
на замовлення 1300 шт: термін постачання 21-31 дні (днів) |
|||||||
| JAN2N7370 | Microchip Technology |
Description: TRANS NPN DARL 100V 12A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254AA Grade: Military Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W Qualification: MIL-PRF-19500/624 |
товар відсутній |
||||||||
| JANTX2N7370 | Microchip Technology |
Description: TRANS NPN DARL 100V 12A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254AA Grade: Military Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W Qualification: MIL-PRF-19500/624 |
товар відсутній |
||||||||
| JANTXV2N7370 | Microchip Technology |
Description: TRANS NPN DARL 100V 12A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254AA Grade: Military Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W Qualification: MIL-PRF-19500/624 |
товар відсутній |
||||||||
| VCC1-1544-50M0000000 | Microchip Technology |
Description: CUSTOM CMOS XO Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 3.3V Current - Supply (Max): 20mA Height - Seated (Max): 0.075" (1.90mm) Part Status: Active Frequency: 50 MHz Base Resonator: Crystal |
товар відсутній |
||||||||
 |
JAN1N4114-1 | Microchip Technology |
Description: DIODE ZENER 20V DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 15.2 V Qualification: MIL-PRF-19500/435 |
товар відсутній |
|||||||
 |
ATSAME51G19A-MU-EFP | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 48VQFN Packaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 192K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 20x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V Connectivity: CANbus, EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 48-VQFN (7x7) Number of I/O: 37 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||
| DSC6001HE2A-018.4320 | Microchip Technology |
Description: MEMS OSC XO 18.4320MHZ CMOS SMD |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
||||||||
 |
TC2014-3.3VCTTR | Microchip Technology |
Description: IC REG LINEAR 3.3V 50MA SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 50mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 55dB (1kHz) Voltage Dropout (Max): 0.07V @ 50mA Protection Features: Over Current, Over Temperature |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||
|
|
TC2014-3.3VCTTR | Microchip Technology |
Description: IC REG LINEAR 3.3V 50MA SOT23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 50mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 55dB (1kHz) Voltage Dropout (Max): 0.07V @ 50mA Protection Features: Over Current, Over Temperature |
на замовлення 4979 шт: термін постачання 21-31 дні (днів) |
|
||||||
 |
ATXMEGA128C3-MHR | Microchip Technology |
Description: IC MCU 8/16BIT 128KB FLASH 64QFN Packaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 128KB (64K x 16) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: AVR Data Converters: A/D 16x12b Core Size: 8/16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 3.6V Connectivity: I2C, IrDA, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Number of I/O: 50 DigiKey Programmable: Not Verified |
товар відсутній |
| MSCSM70HM19CT3AG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP3F
Description: PM-MOSFET-SIC-SBD~-SP3F
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 18479.66 грн |
| MSCSM70AM10CT3AG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 700V 241A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP3F
Part Status: Active
Description: SIC 2N-CH 700V 241A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP3F
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 16443.37 грн |
| MSCSM120HM31CT3AG |
Виробник: Microchip Technology
Description: SIC 4N-CH 1200V 89A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP3F
Part Status: Active
Description: SIC 4N-CH 1200V 89A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP3F
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17524.34 грн |
| MSCSM70VM10C4AG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP4
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP4
Part Status: Active
Description: PM-MOSFET-SIC-SBD~-SP4
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP4
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21860.15 грн |
| MSCSM70TAM19CT3AG |
|
Виробник: Microchip Technology
Description: SIC 6N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
Description: SIC 6N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 23260.5 грн |
| MSCSM70AM07CT3AG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 700V 353A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Supplier Device Package: SP3F
Description: SIC 2N-CH 700V 353A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Supplier Device Package: SP3F
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 23494.24 грн |
| MSCSM120TAM31CT3AG |
|
Виробник: Microchip Technology
Description: SIC 6N-CH 1200V 89A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP3F
Description: SIC 6N-CH 1200V 89A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP3F
товар відсутній
| MSCSM120AM11CT3AG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 254A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.067kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP3F
Description: SIC 2N-CH 1200V 254A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.067kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP3F
товар відсутній
| MSCSM120AM08CT3AG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 337A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.409kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Supplier Device Package: SP3F
Part Status: Active
Description: SIC 2N-CH 1200V 337A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.409kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Supplier Device Package: SP3F
Part Status: Active
товар відсутній
| MSCSM120HM16CT3AG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP3F
Description: PM-MOSFET-SIC-SBD~-SP3F
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 36436.39 грн |
| MSCSM70TAM10CTPAG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6P
Description: PM-MOSFET-SIC-SBD~-SP6P
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| MSCSM70AM025CT6AG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6C
Description: PM-MOSFET-SIC-SBD~-SP6C
товар відсутній
| MSCSM120TAM16CTPAG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 728W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP6-P
Part Status: Active
Description: PM-MOSFET-SIC-SBD~-SP6P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 728W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP6-P
Part Status: Active
товар відсутній
| MSCSM120AM042CT6AG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 495A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C
Part Status: Active
Description: SIC 2N-CH 1200V 495A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C
Part Status: Active
товар відсутній
| MSCSM70TAM05TPAG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC~-SP6P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Part Status: Active
Current: 273 A
Voltage: 700 V
Description: PM-MOSFET-SIC~-SP6P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Part Status: Active
Current: 273 A
Voltage: 700 V
товар відсутній
| MSCSM70AM025CD3AG |
|
Виробник: Microchip Technology
Description: SIC 700V 538A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
Supplier Device Package: D3
Part Status: Active
Description: SIC 700V 538A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
Supplier Device Package: D3
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 56473.63 грн |
| MSCSM70AM025CT6LIAG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6C LI
Description: PM-MOSFET-SIC-SBD~-SP6C LI
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 59414.01 грн |
| MSCSM120AM042CT6LIAG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 495A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C LI
Part Status: Active
Description: SIC 2N-CH 1200V 495A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C LI
Part Status: Active
товар відсутній
| MSCSM120AM042CD3AG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 495A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: D3
Part Status: Active
Description: SIC 2N-CH 1200V 495A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: D3
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 60671.16 грн |
| MSCSM120TAM11CTPAG |
|
Виробник: Microchip Technology
Description: SIC 6N-CH 1200V 251A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP6-P
Part Status: Active
Description: SIC 6N-CH 1200V 251A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP6-P
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 71685.82 грн |
| MSCSM120AM027CT6AG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 733A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: SP6C
Description: SIC 2N-CH 1200V 733A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: SP6C
товар відсутній
| MSCSM120AM027CD3AG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 733A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: D3
Part Status: Active
Description: SIC 2N-CH 1200V 733A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: D3
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 87551.51 грн |
| MSCSM120AM02CT6LIAG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 947A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Supplier Device Package: SP6C LI
Part Status: Active
Description: SIC 2N-CH 1200V 947A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Supplier Device Package: SP6C LI
Part Status: Active
товар відсутній
| 1N938A |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
на замовлення 99 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 636.65 грн |
| JAN1N823-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
Description: DIODE ZENER 6.2V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
товар відсутній
| AT28HC256-70SU-T |
|
Виробник: Microchip Technology
Description: IC EEPROM 256KBIT PAR 28SOIC
Description: IC EEPROM 256KBIT PAR 28SOIC
товар відсутній
| AT28HC256-70SU-T |
|
Виробник: Microchip Technology
Description: IC EEPROM 256KBIT PAR 28SOIC
Description: IC EEPROM 256KBIT PAR 28SOIC
товар відсутній
| JANTXV2N5339U3 |
Виробник: Microchip Technology
Description: TRANS NPN 100V 5A U-3
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: U-3 (TO-276AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 5A U-3
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: U-3 (TO-276AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
товар відсутній
| AT27C080-12DC |
|
Виробник: Microchip Technology
Description: IC EPROM 8M PARALLEL 32CDIP
Description: IC EPROM 8M PARALLEL 32CDIP
товар відсутній
| AT27C080-90DC |
|
Виробник: Microchip Technology
Description: IC EPROM 8M PARALLEL 32CDIP
Description: IC EPROM 8M PARALLEL 32CDIP
товар відсутній
| AT27C080-12RC |
|
Виробник: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
Description: IC EPROM 8M PARALLEL 32SOIC
товар відсутній
| AT27C080-12RI |
|
Виробник: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
Description: IC EPROM 8M PARALLEL 32SOIC
товар відсутній
| AT27C080-15RC |
|
Виробник: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
Description: IC EPROM 8M PARALLEL 32SOIC
товар відсутній
| AT27C080-15RI |
|
Виробник: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
Description: IC EPROM 8M PARALLEL 32SOIC
товар відсутній
| AT27C080-90RC |
|
Виробник: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
Description: IC EPROM 8M PARALLEL 32SOIC
товар відсутній
| AT27C080-90RI |
|
Виробник: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
Description: IC EPROM 8M PARALLEL 32SOIC
товар відсутній
| ATMXT1664T3-C2U035 |
|
Виробник: Microchip Technology
Description: 1664 CHANNEL TOUCHSCREEN CONTROL
Packaging: Tray
Package / Case: 162-UFBGA
Mounting Type: Surface Mount
Interface: I²C, SPI, USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Resolution (Bits): 12 b
Supplier Device Package: 162-UFBGA (10x5)
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
Part Status: Active
Current - Supply: 11.28 mA
Description: 1664 CHANNEL TOUCHSCREEN CONTROL
Packaging: Tray
Package / Case: 162-UFBGA
Mounting Type: Surface Mount
Interface: I²C, SPI, USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Resolution (Bits): 12 b
Supplier Device Package: 162-UFBGA (10x5)
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
Part Status: Active
Current - Supply: 11.28 mA
товар відсутній
| MIC2505YM-TR |
|
Виробник: Microchip Technology
Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
на замовлення 568 шт:
термін постачання 21-31 дні (днів)| ATSAML10E16A-AU |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M23
Data Converters: A/D 10x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 32-TQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M23
Data Converters: A/D 10x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 32-TQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 5168 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 197.94 грн |
| 25+ | 174.77 грн |
| 100+ | 158.53 грн |
| DSPIC33CH128MP202-I/SS |
|
Виробник: Microchip Technology
Description: IC MCU 16BIT 152KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 180MHz, 200MHz
Program Memory Size: 152KB (152K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH, PRAM
Core Processor: dsPIC
Data Converters: A/D 23x12b; D/A 4x12b
Core Size: 16-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, QEI, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 152KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 180MHz, 200MHz
Program Memory Size: 152KB (152K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH, PRAM
Core Processor: dsPIC
Data Converters: A/D 23x12b; D/A 4x12b
Core Size: 16-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, QEI, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 21
DigiKey Programmable: Not Verified
на замовлення 545 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 275.16 грн |
| 25+ | 242.79 грн |
| 100+ | 220.33 грн |
| JAN1N5297UR-1 |
|
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.1MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.1mA
Voltage - Limiting (Max): 1.35V
Description: DIODE CUR REG 100V 1.1MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.1mA
Voltage - Limiting (Max): 1.35V
товар відсутній
| JANTXV1N5297UR-1 |
|
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.1MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Discontinued at Digi-Key
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.1mA
Voltage - Limiting (Max): 1.35V
Description: DIODE CUR REG 100V 1.1MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Discontinued at Digi-Key
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.1mA
Voltage - Limiting (Max): 1.35V
товар відсутній
| 24FC16T-I/SN |
|
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3300+ | 17.44 грн |
| 24FC16T-I/SN |
|
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 18.95 грн |
| 25+ | 17.28 грн |
| 100+ | 16.8 грн |
| 24FC16H-I/SN |
|
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 1108 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 18.95 грн |
| 25+ | 16.68 грн |
| 100+ | 16.23 грн |
| 24FC16-I/SN |
|
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Verified
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 18.95 грн |
| 25+ | 16.68 грн |
| 100+ | 16.23 грн |
| 24FC16T-I/MS |
|
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP
Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| 24FC16T-I/MS |
|
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP
Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| 24FC16-I/MS |
|
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP
Description: IC EEPROM 16KBIT I2C 1MHZ 8MSOP
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)| JAN2N7370 |
|
Виробник: Microchip Technology
Description: TRANS NPN DARL 100V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254AA
Grade: Military
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/624
Description: TRANS NPN DARL 100V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254AA
Grade: Military
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/624
товар відсутній
| JANTX2N7370 |
|
Виробник: Microchip Technology
Description: TRANS NPN DARL 100V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254AA
Grade: Military
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/624
Description: TRANS NPN DARL 100V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254AA
Grade: Military
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/624
товар відсутній
| JANTXV2N7370 |
|
Виробник: Microchip Technology
Description: TRANS NPN DARL 100V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254AA
Grade: Military
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/624
Description: TRANS NPN DARL 100V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254AA
Grade: Military
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/624
товар відсутній
| VCC1-1544-50M0000000 |
Виробник: Microchip Technology
Description: CUSTOM CMOS XO
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 20mA
Height - Seated (Max): 0.075" (1.90mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Description: CUSTOM CMOS XO
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 20mA
Height - Seated (Max): 0.075" (1.90mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
товар відсутній
| JAN1N4114-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 20V DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15.2 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 20V DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15.2 V
Qualification: MIL-PRF-19500/435
товар відсутній
| ATSAME51G19A-MU-EFP |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 48VQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 20x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: CANbus, EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 48-VQFN (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 48VQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 20x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: CANbus, EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 48-VQFN (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
товар відсутній
| DSC6001HE2A-018.4320 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 18.4320MHZ CMOS SMD
Description: MEMS OSC XO 18.4320MHZ CMOS SMD
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| TC2014-3.3VCTTR |
|
Виробник: Microchip Technology
Description: IC REG LINEAR 3.3V 50MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.07V @ 50mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 50MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.07V @ 50mA
Protection Features: Over Current, Over Temperature
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 23.27 грн |
| TC2014-3.3VCTTR |
|
Виробник: Microchip Technology
Description: IC REG LINEAR 3.3V 50MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.07V @ 50mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 50MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.07V @ 50mA
Protection Features: Over Current, Over Temperature
на замовлення 4979 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 31.59 грн |
| 25+ | 25.52 грн |
| 100+ | 22.41 грн |
| ATXMEGA128C3-MHR |
|
Виробник: Microchip Technology
Description: IC MCU 8/16BIT 128KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 16x12b
Core Size: 8/16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 3.6V
Connectivity: I2C, IrDA, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 50
DigiKey Programmable: Not Verified
Description: IC MCU 8/16BIT 128KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 16x12b
Core Size: 8/16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 3.6V
Connectivity: I2C, IrDA, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 50
DigiKey Programmable: Not Verified
товар відсутній