Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (357952) > Сторінка 1327 з 5966
| Фото | Назва | Виробник | Інформація |
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MAPLAD7.5KP13A | Microchip Technology |
 Description: TVS DIODEPackaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 349A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MAPLAD7.5KP13AE3 | Microchip Technology |
Description: TVS DIODE Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 349A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXLPLAD6.5KP13Ae3 | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 302A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXLPLAD7.5KP13AE3 | Microchip Technology |
Description: TVS DIODE Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 349A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MA5KP13A | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 233A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MA5KP13Ae3 | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 233A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXPLAD6.5KP13Ae3 | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 302A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXPLAD7.5KP13AE3 | Microchip Technology |
Description: TVS DIODE Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 349A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MPLAD15KP13A/TR | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC PLAD Packaging: Tape & Reel (TR) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 696A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MAPLAD15KP13A | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 696A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MAPLAD15KP13Ae3 | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 696A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXPLAD15KP13A | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 696A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N2971RB | Microchip Technology |
Description: DIODE ZENER 7.5V 10W DO213AA Packaging: Bulk Tolerance: ±5% Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 1.3 Ohms Supplier Device Package: DO-213AA (DO-4) Grade: Military Power - Max: 10 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 5.7 V Qualification: MIL-PRF-19500/124 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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ATSAM4S2BA-AUR | Microchip Technology |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 128KB (128K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 16x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Active Number of I/O: 47 DigiKey Programmable: Not Verified |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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ATSAM4S2BA-AUR | Microchip Technology |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Cut Tape (CT) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 128KB (128K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 16x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Active Number of I/O: 47 DigiKey Programmable: Not Verified |
на замовлення 1917 шт: термін постачання 21-31 дні (днів) |
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| JAN1N6044A | Microchip Technology |
Description: TVS DIODE 13VWM 22.5VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JAN1N6047A | Microchip Technology |
Description: TVS DIODE 18VWM 30.6VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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JANTX1N6048A | Microchip Technology |
Description: TVS DIODE 20VWM 33.2VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| JANTX1N6041A | Microchip Technology |
Description: TVS DIODE 10VWM 16.7VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTX1N6042A | Microchip Technology |
Description: TVS DIODE 11VWM 18.2VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTX1N6044A | Microchip Technology |
Description: TVS DIODE 13VWM 22.5VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTX1N6046A | Microchip Technology |
Description: TVS DIODE 17VWM 27.7VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTX1N6047A | Microchip Technology |
Description: TVS DIODE 18VWM 30.6VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTXV1N6041A | Microchip Technology |
Description: TVS DIODE 10VWM 16.7VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTXV1N6047A | Microchip Technology |
Description: TVS DIODE 18VWM 30.6VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTX1N6040A | Microchip Technology |
Description: TVS DIODE 9VWM 15.6VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MXLSMCJ30CA | Microchip Technology |
Description: TVS DIODE 30VWM 48.4VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 31A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT8020LLLG | Microchip Technology |
Description: MOSFET N-CH 800V 38A TO264 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT25040B-MAPD-E | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 512 x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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В кошику од. на суму грн. | ||||||
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AT25040B-MAPD-T | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Grade: Automotive Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 512 x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT25040B-SSPD-T | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 5MHZ 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 512 x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT25040B-XPD-T | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 5MHZ 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 512 x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT45DB081B-RI-2.5 | Microchip Technology |
Description: IC FLASH 8MBIT SPI 15MHZ 28SOIC Packaging: Tube Package / Case: 28-SOIC (0.342", 8.69mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 2.5V ~ 3.6V Technology: FLASH Clock Frequency: 15 MHz Memory Format: FLASH Supplier Device Package: 28-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 14ms Memory Interface: SPI Memory Organization: 264 Bytes x 4096 pages DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT80GA90S | Microchip Technology |
Description: IGBT PT 900V 145A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Supplier Device Package: D3Pak IGBT Type: PT Td (on/off) @ 25°C: 18ns/149ns Switching Energy: 1.625mJ (on), 1.389mJ (off) Test Condition: 600V, 47A, 4.7Ohm, 15V Gate Charge: 200 nC Part Status: Active Current - Collector (Ic) (Max): 145 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 239 A Power - Max: 625 W |
на замовлення 147 шт: термін постачання 21-31 дні (днів) |
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APT8065BVRG | Microchip Technology |
Description: MOSFET N-CH 800V 13A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
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В кошику од. на суму грн. | ||||||
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APT8065BVFRG | Microchip Technology |
Description: MOSFET N-CH 800V 13A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT8065SVRG | Microchip Technology |
Description: MOSFET N-CH 800V 13A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D3Pak Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT8056BVRG | Microchip Technology |
Description: MOSFET N-CH 800V 16A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT8043BLLG | Microchip Technology |
Description: MOSFET N-CH 800V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT8043BFLLG | Microchip Technology |
Description: MOSFET N-CH 800V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT8043SFLLG | Microchip Technology |
Description: MOSFET N-CH 800V 20A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT8030LVRG | Microchip Technology |
Description: MOSFET N-CH 800V 27A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Part Status: Active Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT8030LVFRG | Microchip Technology |
Description: MOSFET N-CH 800V 27A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Part Status: Active Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
APT80GP60B2G | Microchip Technology |
Description: IGBT PT 600V 100A TMAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A Supplier Device Package: T-MAX™ [B2] IGBT Type: PT Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 1041 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
APT8030JVFR | Microchip Technology |
Description: MOSFET N-CH 800V 25A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: ISOTOP® Part Status: Active Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
APT80GP60JDQ3 | Microchip Technology |
Description: IGBT 600V 151A 462W SOT227 Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Current - Collector (Ic) (Max): 151 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 462 W Current - Collector Cutoff (Max): 1.25 mA Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
APT8014L2FLLG | Microchip Technology |
Description: MOSFET N-CH 800V 52A 264 MAX Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: 264 MAX™ [L2] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
APT8014L2LLG | Microchip Technology |
Description: MOSFET N-CH 800V 52A 264 MAX Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: 264 MAX™ [L2] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
APT8015JVR | Microchip Technology |
Description: MOSFET N-CH 800V 44A ISOTOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
APT8015JVFR | Microchip Technology |
Description: MOSFET N-CH 800V 44A ISOTOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
APT8011JLL | Microchip Technology |
Description: MOSFET N-CH 800V 51A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
|
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APT8011JFLL | Microchip Technology |
Description: MOSFET N-CH 800V 51A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
APT1201R6BVFRG | Microchip Technology |
Description: MOSFET N-CH 1200V 8A TO247 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
47L64-I/SN | Microchip Technology |
Description: IC EERAM 64KBIT I2C 1MHZ 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
DSC6001HE2A-014.7456 | Microchip Technology |
Description: MEMS OSC XO 14.7456MHZ CMOS SMD Packaging: Bag Package / Case: 4-VFLGA Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Ratings: AEC-Q100 Current - Supply (Max): 1.3mA (Typ) Supplier Device Package: 4-VFLGA (1.6x1.2) Height - Seated (Max): 0.035" (0.89mm) Frequency: 14.7456 MHz Base Resonator: MEMS |
на замовлення 776 шт: термін постачання 21-31 дні (днів) |
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 |
93LC46B-I/SN15KVAO | Microchip Technology |
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 64 x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
DSC1001DL2-013.5000 | Microchip Technology |
Description: MEMS OSC XO 13.5000MHZ CMOS SMD Packaging: Tube Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Frequency Stability: ±25ppm Voltage - Supply: 1.8V ~ 3.3V Ratings: AEC-Q100 Current - Supply (Max): 6.3mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 13.5 MHz Base Resonator: MEMS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
PIC32MZ0512EFF144T-E/JWX | Microchip Technology | Description: IC MCU 32BIT 512KB FLSH 144TFBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
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PIC32MZ0512EFF144T-E/JWX | Microchip Technology | Description: IC MCU 32BIT 512KB FLSH 144TFBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
PIC32MZ0512EFF144-E/PL | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 144LQFP |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| MAPLAD7.5KP13A |
|
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MAPLAD7.5KP13AE3 |
|
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MXLPLAD6.5KP13Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 302A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 302A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MXLPLAD7.5KP13AE3 |
|
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MA5KP13A |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MA5KP13Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MXPLAD6.5KP13Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 302A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 302A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MXPLAD7.5KP13AE3 |
|
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MPLAD15KP13A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 696A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 696A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MAPLAD15KP13A |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 696A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 696A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MAPLAD15KP13Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 696A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 696A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MXPLAD15KP13A |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 696A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 696A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| JANTX1N2971RB |
|
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 10W DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 1.3 Ohms
Supplier Device Package: DO-213AA (DO-4)
Grade: Military
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 5.7 V
Qualification: MIL-PRF-19500/124
Description: DIODE ZENER 7.5V 10W DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 1.3 Ohms
Supplier Device Package: DO-213AA (DO-4)
Grade: Military
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 5.7 V
Qualification: MIL-PRF-19500/124
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| ATSAM4S2BA-AUR |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 263.56 грн |
| ATSAM4S2BA-AUR |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
на замовлення 1917 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 320.27 грн |
| 25+ | 280.29 грн |
| 100+ | 253.79 грн |
| JAN1N6044A |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 22.5VC DO13
Description: TVS DIODE 13VWM 22.5VC DO13
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| JAN1N6047A |
|
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 30.6VC DO13
Description: TVS DIODE 18VWM 30.6VC DO13
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| JANTX1N6048A |
|
Виробник: Microchip Technology
Description: TVS DIODE 20VWM 33.2VC DO13
Description: TVS DIODE 20VWM 33.2VC DO13
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| JANTX1N6041A |
|
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 16.7VC DO13
Description: TVS DIODE 10VWM 16.7VC DO13
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| JANTX1N6042A |
|
Виробник: Microchip Technology
Description: TVS DIODE 11VWM 18.2VC DO13
Description: TVS DIODE 11VWM 18.2VC DO13
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| JANTX1N6044A |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 22.5VC DO13
Description: TVS DIODE 13VWM 22.5VC DO13
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| JANTX1N6046A |
|
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 27.7VC DO13
Description: TVS DIODE 17VWM 27.7VC DO13
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| JANTX1N6047A |
|
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 30.6VC DO13
Description: TVS DIODE 18VWM 30.6VC DO13
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| JANTXV1N6041A |
|
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 16.7VC DO13
Description: TVS DIODE 10VWM 16.7VC DO13
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| JANTXV1N6047A |
|
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 30.6VC DO13
Description: TVS DIODE 18VWM 30.6VC DO13
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| JANTX1N6040A |
|
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.6VC DO13
Description: TVS DIODE 9VWM 15.6VC DO13
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| MXLSMCJ30CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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| APT8020LLLG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 38A TO264
Description: MOSFET N-CH 800V 38A TO264
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| AT25040B-MAPD-E |
|
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| AT25040B-MAPD-T |
|
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 4KBIT SPI 5MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| AT25040B-SSPD-T |
|
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 5MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 4KBIT SPI 5MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| AT25040B-XPD-T |
|
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 5MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 4KBIT SPI 5MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| AT45DB081B-RI-2.5 |
Виробник: Microchip Technology
Description: IC FLASH 8MBIT SPI 15MHZ 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH
Clock Frequency: 15 MHz
Memory Format: FLASH
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 14ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 4096 pages
DigiKey Programmable: Not Verified
Description: IC FLASH 8MBIT SPI 15MHZ 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH
Clock Frequency: 15 MHz
Memory Format: FLASH
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 14ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 4096 pages
DigiKey Programmable: Not Verified
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| APT80GA90S |
|
Виробник: Microchip Technology
Description: IGBT PT 900V 145A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Supplier Device Package: D3Pak
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/149ns
Switching Energy: 1.625mJ (on), 1.389mJ (off)
Test Condition: 600V, 47A, 4.7Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 239 A
Power - Max: 625 W
Description: IGBT PT 900V 145A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Supplier Device Package: D3Pak
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/149ns
Switching Energy: 1.625mJ (on), 1.389mJ (off)
Test Condition: 600V, 47A, 4.7Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 239 A
Power - Max: 625 W
на замовлення 147 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 788.11 грн |
| 100+ | 655.42 грн |
| APT8065BVRG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
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| APT8065BVFRG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
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| APT8065SVRG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 13A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3Pak
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Description: MOSFET N-CH 800V 13A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3Pak
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
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| APT8056BVRG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Description: MOSFET N-CH 800V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
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| APT8043BLLG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 800V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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| APT8043BFLLG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 800V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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| APT8043SFLLG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 20A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 800V 20A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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| APT8030LVRG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 27A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Description: MOSFET N-CH 800V 27A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
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| APT8030LVFRG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 27A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Description: MOSFET N-CH 800V 27A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
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| APT80GP60B2G |
|
Виробник: Microchip Technology
Description: IGBT PT 600V 100A TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: T-MAX™ [B2]
IGBT Type: PT
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1041 W
Description: IGBT PT 600V 100A TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: T-MAX™ [B2]
IGBT Type: PT
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1041 W
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| APT8030JVFR |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 25A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Description: MOSFET N-CH 800V 25A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
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| APT80GP60JDQ3 |
|
Виробник: Microchip Technology
Description: IGBT 600V 151A 462W SOT227
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 151 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 1.25 mA
Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V
Description: IGBT 600V 151A 462W SOT227
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 151 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 1.25 mA
Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V
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| APT8014L2FLLG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 52A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
Description: MOSFET N-CH 800V 52A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
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| APT8014L2LLG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 52A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
Description: MOSFET N-CH 800V 52A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
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| APT8015JVR |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 44A ISOTOP
Description: MOSFET N-CH 800V 44A ISOTOP
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| APT8015JVFR |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 44A ISOTOP
Description: MOSFET N-CH 800V 44A ISOTOP
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| APT8011JLL |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 51A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
Description: MOSFET N-CH 800V 51A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6611.82 грн |
| APT8011JFLL |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 51A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
Description: MOSFET N-CH 800V 51A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
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| APT1201R6BVFRG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 8A TO247
Description: MOSFET N-CH 1200V 8A TO247
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| 47L64-I/SN |
|
Виробник: Microchip Technology
Description: IC EERAM 64KBIT I2C 1MHZ 8SOIC
Description: IC EERAM 64KBIT I2C 1MHZ 8SOIC
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| DSC6001HE2A-014.7456 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 14.7456MHZ CMOS SMD
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VFLGA (1.6x1.2)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 14.7456 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 14.7456MHZ CMOS SMD
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VFLGA (1.6x1.2)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 14.7456 MHz
Base Resonator: MEMS
на замовлення 776 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.20 грн |
| 25+ | 76.71 грн |
| 100+ | 69.47 грн |
| 93LC46B-I/SN15KVAO |
|
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| DSC1001DL2-013.5000 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 13.5000MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.3mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 13.5 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 13.5000MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.3mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 13.5 MHz
Base Resonator: MEMS
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| PIC32MZ0512EFF144T-E/JWX |
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLSH 144TFBGA
Description: IC MCU 32BIT 512KB FLSH 144TFBGA
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| PIC32MZ0512EFF144T-E/JWX |
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLSH 144TFBGA
Description: IC MCU 32BIT 512KB FLSH 144TFBGA
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| PIC32MZ0512EFF144-E/PL |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 144LQFP
Description: IC MCU 32BIT 512KB FLASH 144LQFP
на замовлення 360 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.