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PIC18F27Q84-E/SP PIC18F27Q84-E/SP Microchip Technology PIC18F27-47-57Q84-Data-Sheet-40002213E.pdf Description: IC MCU 8BIT 128KB FLASH 28SPDIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 64MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 24x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 28-SPDIP
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 687 шт:
термін постачання 21-31 дні (днів)
2+204.15 грн
25+180.63 грн
100+163.95 грн
Мінімальне замовлення: 2
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PIC18F27Q84T-I/SO PIC18F27Q84T-I/SO Microchip Technology PIC18F27-47-57Q84-Data-Sheet-40002213E.pdf Description: IC MCU 8BIT 128KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 24x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
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1N4624UR-1 1N4624UR-1 Microchip Technology 1N4614-1-1n4627e3-1N4099-1-1N4135-1.pdf Description: DIODE ZENER 4.7V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 1550 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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1N5252BUR-1 1N5252BUR-1 Microchip Technology Description: DIODE ZENER 24V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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1N5252B/TR 1N5252B/TR Microchip Technology 1N5221%20-%201N5281B.pdf Description: DIODE ZENER 24V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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1N5252BUR-1/TR 1N5252BUR-1/TR Microchip Technology Description: DIODE ZENER 24V 500MW DO213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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DSC1001AL1-025.0000 Microchip Technology MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 25.0000MHZ CMOS SMD
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DSC1001AL1-025.0000T Microchip Technology MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 25.0000MHZ CMOS SMD
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1N5247A 1N5247A Microchip Technology Description: ZENER DIODE
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.4 V
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1N5247B/TR 1N5247B/TR Microchip Technology 1N5221%20-%201N5281B.pdf Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
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AT24C01C-SSPD-T AT24C01C-SSPD-T Microchip Technology Atmel-8819-SEEPROM-AT24C01C-02C-04C-08C-Auto-Datasheet.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8SOIC
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AT24C04C-SSPD-T AT24C04C-SSPD-T Microchip Technology AT24C01C-AT24C02C-AT24C04C-AT24C08C-Data-Sheet-DS20006141.pdf Description: IC EEPROM 4KBIT I2C 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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AT25020B-SSPD-T AT25020B-SSPD-T Microchip Technology 20006285B.pdf Description: IC EEPROM 2KBIT SPI 5MHZ 8SOIC
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AT25320B-SSPDGV-T AT25320B-SSPDGV-T Microchip Technology 20006310A.pdf Description: IC EEPROM 32KBIT SPI 5MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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AT93C56B-SSPD-T AT93C56B-SSPD-T Microchip Technology filehandler.aspx?ddocname=en589813 Description: IC EEPROM 2KBIT 3-WIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: 3-Wire Serial
Memory Organization: 256 x 8, 128 x 16
DigiKey Programmable: Not Verified
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JANS2N4033 JANS2N4033 Microchip Technology Description: TRANS PNP 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/512
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JANS2N4033UB JANS2N4033UB Microchip Technology Description: TRANS PNP 80V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/512
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Jantxv2N4033UB Jantxv2N4033UB Microchip Technology Description: TRANS PNP 80V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/512
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JAN2N4033UA Microchip Technology Description: TRANS PNP 80V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
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JANS2N4033UA Microchip Technology Description: TRANS PNP 80V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
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JANTX2N4033UA Microchip Technology Description: TRANS PNP 80V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
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JANTXV2N4033UA Microchip Technology Description: TRANS PNP 80V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
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JANHCB2N4033 JANHCB2N4033 Microchip Technology Description: TRANS PNP 80V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-39
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/512
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JANS2N4033UA/TR JANS2N4033UA/TR Microchip Technology Description: TRANS PNP 80V 1A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
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2N4033UB/TR 2N4033UB/TR Microchip Technology Description: TRANS PNP 80V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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JANS2N4033UB/TR JANS2N4033UB/TR Microchip Technology Description: TRANS PNP 80V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
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JANKCB2N4033 JANKCB2N4033 Microchip Technology Description: TRANS PNP 80V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-39
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/512
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JANTX2N4033UB/TR JANTX2N4033UB/TR Microchip Technology Description: TRANS PNP 80V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
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2N4033UA/TR 2N4033UA/TR Microchip Technology Description: TRANS PNP 80V 1A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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DSPIC33CH256MP208-I/PT DSPIC33CH256MP208-I/PT Microchip Technology DS70005308B%20-%20dsPIC33CH512MP508%20Family%20Product%20Brief.pdf Description: IC MCU 16BIT 328KB FLASH 80TQFP
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
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2N3440E3 2N3440E3 Microchip Technology 8830-lds-0022-datasheet Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANSR2N3440UA Microchip Technology Description: TRANS NPN 250V 2UA UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JANTX2N3440U4 JANTX2N3440U4 Microchip Technology Description: TRANS NPN 250V 2UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JANTXV2N3440UA Microchip Technology Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JAN2N3440U4 JAN2N3440U4 Microchip Technology Description: TRANS NPN 250V 2UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JAN2N3440UA Microchip Technology Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JANTXV2N3440U4 JANTXV2N3440U4 Microchip Technology Description: TRANS NPN 250V 2UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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ATSAM4S2CB-AN ATSAM4S2CB-AN Microchip Technology Atmel-11100-32-bit%20Cortex-M4-Microcontroller-SAM4S_Datasheet.pdf Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
1+315.16 грн
25+276.72 грн
100+249.81 грн
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JANSR2N2219AL JANSR2N2219AL Microchip Technology Description: TRANS NPN 50V 0.8A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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JANS2N2219 JANS2N2219 Microchip Technology Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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JANS2N2219A JANS2N2219A Microchip Technology 8917-lds-0091-datasheet Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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JANS2N2219AL JANS2N2219AL Microchip Technology Description: TRANS NPN 50V 0.8A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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JANSR2N2219 JANSR2N2219 Microchip Technology Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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JANSR2N2219A JANSR2N2219A Microchip Technology Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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25072478 Microchip Technology Description: 25072478
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PIC24FJ256GL405-I/PT PIC24FJ256GL405-I/PT Microchip Technology PIC24FJ512GU410-Family-Data-Sheet-DS30010203C.pdf Description: IC MCU 16BIT 256KB FLASH 48TQFP
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PIC16C54-XTI/SO PIC16C54-XTI/SO Microchip Technology 30453E.pdf Description: IC MCU 8BIT 768B OTP 18SOIC
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 768B (512 x 12)
RAM Size: 25 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: PIC
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 6.25V
Peripherals: POR, WDT
Supplier Device Package: 18-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Verified
на замовлення 567 шт:
термін постачання 21-31 дні (днів)
70+298.99 грн
Мінімальне замовлення: 70
В кошику  од. на суму  грн.
PIC16C54-H5/SO PIC16C54-H5/SO Microchip Technology MCHPS01572-1.pdf?t.download=true&u=5oefqw Description: IC MCU 8BIT 768B OTP 18SOIC
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 768B (512 x 12)
RAM Size: 25 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: PIC
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Peripherals: POR, WDT
Supplier Device Package: 18-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
на замовлення 6420 шт:
термін постачання 21-31 дні (днів)
58+363.35 грн
Мінімальне замовлення: 58
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PIC16C54-H5I/SO PIC16C54-H5I/SO Microchip Technology MCHPS01572-1.pdf?t.download=true&u=5oefqw Description: IC MCU 8BIT 768B OTP 18SOIC
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 768B (512 x 12)
RAM Size: 25 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: PIC
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Peripherals: POR, WDT
Supplier Device Package: 18-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
на замовлення 10121 шт:
термін постачання 21-31 дні (днів)
52+399.35 грн
Мінімальне замовлення: 52
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CDLL4150/TR CDLL4150/TR Microchip Technology 5809-1n4150ur-1n3600ur-datasheet Description: DIODE STANDARD 75V 300MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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1N4128 Microchip Technology Description: DIODE ZENER
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1N4128UR-1 Microchip Technology 11007-sd10a-datasheet Description: DIODE ZENER
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JAN1N4128UR-1 JAN1N4128UR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 60V DO213AA
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JANTX1N4128UR-1 JANTX1N4128UR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 60V 500MW DO213AA
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JAN1N4128C-1 JAN1N4128C-1 Microchip Technology 129734-lds-0245-2-datasheet Description: DIODE ZENER 60V DO35
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JANTXV1N4128UR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 60V 500MW DO213AA
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JAN1N4128D-1 JAN1N4128D-1 Microchip Technology 129734-lds-0245-2-datasheet Description: DIODE ZENER 60V DO35
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JANTX1N4128C-1 JANTX1N4128C-1 Microchip Technology 129734-lds-0245-2-datasheet Description: DIODE ZENER 60V 500MW DO35
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JANTX1N4128D-1 JANTX1N4128D-1 Microchip Technology 129734-lds-0245-2-datasheet Description: DIODE ZENER 60V 500MW DO35
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JAN1N4128CUR-1 JAN1N4128CUR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 60V DO213AA
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PIC18F27Q84-E/SP PIC18F27-47-57Q84-Data-Sheet-40002213E.pdf
PIC18F27Q84-E/SP
Виробник: Microchip Technology
Description: IC MCU 8BIT 128KB FLASH 28SPDIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 64MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 24x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 28-SPDIP
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 687 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+204.15 грн
25+180.63 грн
100+163.95 грн
Мінімальне замовлення: 2
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PIC18F27Q84T-I/SO PIC18F27-47-57Q84-Data-Sheet-40002213E.pdf
PIC18F27Q84T-I/SO
Виробник: Microchip Technology
Description: IC MCU 8BIT 128KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 24x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
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1N4624UR-1 1N4614-1-1n4627e3-1N4099-1-1N4135-1.pdf
1N4624UR-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 1550 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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1N5252BUR-1
1N5252BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 24V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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1N5252B/TR 1N5221%20-%201N5281B.pdf
1N5252B/TR
Виробник: Microchip Technology
Description: DIODE ZENER 24V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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1N5252BUR-1/TR
1N5252BUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 24V 500MW DO213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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DSC1001AL1-025.0000 MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ CMOS SMD
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DSC1001AL1-025.0000T MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ CMOS SMD
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1N5247A
1N5247A
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.4 V
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1N5247B/TR 1N5221%20-%201N5281B.pdf
1N5247B/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
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AT24C01C-SSPD-T Atmel-8819-SEEPROM-AT24C01C-02C-04C-08C-Auto-Datasheet.pdf
AT24C01C-SSPD-T
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8SOIC
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AT24C04C-SSPD-T AT24C01C-AT24C02C-AT24C04C-AT24C08C-Data-Sheet-DS20006141.pdf
AT24C04C-SSPD-T
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT I2C 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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AT25020B-SSPD-T 20006285B.pdf
AT25020B-SSPD-T
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT SPI 5MHZ 8SOIC
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AT25320B-SSPDGV-T 20006310A.pdf
AT25320B-SSPDGV-T
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT SPI 5MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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AT93C56B-SSPD-T filehandler.aspx?ddocname=en589813
AT93C56B-SSPD-T
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT 3-WIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: 3-Wire Serial
Memory Organization: 256 x 8, 128 x 16
DigiKey Programmable: Not Verified
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JANS2N4033
JANS2N4033
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/512
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JANS2N4033UB
JANS2N4033UB
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/512
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Jantxv2N4033UB
Jantxv2N4033UB
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/512
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JAN2N4033UA
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
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JANS2N4033UA
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
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JANTX2N4033UA
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
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JANTXV2N4033UA
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
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JANHCB2N4033
JANHCB2N4033
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-39
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/512
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JANS2N4033UA/TR
JANS2N4033UA/TR
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
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2N4033UB/TR
2N4033UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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JANS2N4033UB/TR
JANS2N4033UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
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JANKCB2N4033
JANKCB2N4033
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-39
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/512
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JANTX2N4033UB/TR
JANTX2N4033UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
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2N4033UA/TR
2N4033UA/TR
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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DSPIC33CH256MP208-I/PT DS70005308B%20-%20dsPIC33CH512MP508%20Family%20Product%20Brief.pdf
DSPIC33CH256MP208-I/PT
Виробник: Microchip Technology
Description: IC MCU 16BIT 328KB FLASH 80TQFP
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
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2N3440E3 8830-lds-0022-datasheet
2N3440E3
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANSR2N3440UA
Виробник: Microchip Technology
Description: TRANS NPN 250V 2UA UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JANTX2N3440U4
JANTX2N3440U4
Виробник: Microchip Technology
Description: TRANS NPN 250V 2UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JANTXV2N3440UA
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JAN2N3440U4
JAN2N3440U4
Виробник: Microchip Technology
Description: TRANS NPN 250V 2UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JAN2N3440UA
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JANTXV2N3440U4
JANTXV2N3440U4
Виробник: Microchip Technology
Description: TRANS NPN 250V 2UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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ATSAM4S2CB-AN Atmel-11100-32-bit%20Cortex-M4-Microcontroller-SAM4S_Datasheet.pdf
ATSAM4S2CB-AN
Виробник: Microchip Technology
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+315.16 грн
25+276.72 грн
100+249.81 грн
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JANSR2N2219AL
JANSR2N2219AL
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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JANS2N2219
JANS2N2219
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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JANS2N2219A 8917-lds-0091-datasheet
JANS2N2219A
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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JANS2N2219AL
JANS2N2219AL
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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JANSR2N2219
JANSR2N2219
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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JANSR2N2219A
JANSR2N2219A
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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25072478
Виробник: Microchip Technology
Description: 25072478
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PIC24FJ256GL405-I/PT PIC24FJ512GU410-Family-Data-Sheet-DS30010203C.pdf
PIC24FJ256GL405-I/PT
Виробник: Microchip Technology
Description: IC MCU 16BIT 256KB FLASH 48TQFP
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PIC16C54-XTI/SO 30453E.pdf
PIC16C54-XTI/SO
Виробник: Microchip Technology
Description: IC MCU 8BIT 768B OTP 18SOIC
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 768B (512 x 12)
RAM Size: 25 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: PIC
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 6.25V
Peripherals: POR, WDT
Supplier Device Package: 18-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Verified
на замовлення 567 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
70+298.99 грн
Мінімальне замовлення: 70
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PIC16C54-H5/SO MCHPS01572-1.pdf?t.download=true&u=5oefqw
PIC16C54-H5/SO
Виробник: Microchip Technology
Description: IC MCU 8BIT 768B OTP 18SOIC
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 768B (512 x 12)
RAM Size: 25 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: PIC
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Peripherals: POR, WDT
Supplier Device Package: 18-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
на замовлення 6420 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
58+363.35 грн
Мінімальне замовлення: 58
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PIC16C54-H5I/SO MCHPS01572-1.pdf?t.download=true&u=5oefqw
PIC16C54-H5I/SO
Виробник: Microchip Technology
Description: IC MCU 8BIT 768B OTP 18SOIC
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 768B (512 x 12)
RAM Size: 25 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: PIC
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Peripherals: POR, WDT
Supplier Device Package: 18-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
на замовлення 10121 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
52+399.35 грн
Мінімальне замовлення: 52
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CDLL4150/TR 5809-1n4150ur-1n3600ur-datasheet
CDLL4150/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 75V 300MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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1N4128
Виробник: Microchip Technology
Description: DIODE ZENER
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1N4128UR-1 11007-sd10a-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
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JAN1N4128UR-1 5801-lds-0245-datasheet
JAN1N4128UR-1
Виробник: Microchip Technology
Description: DIODE ZENER 60V DO213AA
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JANTX1N4128UR-1 5801-lds-0245-datasheet
JANTX1N4128UR-1
Виробник: Microchip Technology
Description: DIODE ZENER 60V 500MW DO213AA
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JAN1N4128C-1 129734-lds-0245-2-datasheet
JAN1N4128C-1
Виробник: Microchip Technology
Description: DIODE ZENER 60V DO35
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JANTXV1N4128UR-1 5801-lds-0245-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 60V 500MW DO213AA
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JAN1N4128D-1 129734-lds-0245-2-datasheet
JAN1N4128D-1
Виробник: Microchip Technology
Description: DIODE ZENER 60V DO35
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JANTX1N4128C-1 129734-lds-0245-2-datasheet
JANTX1N4128C-1
Виробник: Microchip Technology
Description: DIODE ZENER 60V 500MW DO35
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JANTX1N4128D-1 129734-lds-0245-2-datasheet
JANTX1N4128D-1
Виробник: Microchip Technology
Description: DIODE ZENER 60V 500MW DO35
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JAN1N4128CUR-1 5801-lds-0245-datasheet
JAN1N4128CUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 60V DO213AA
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