Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (343113) > Сторінка 1378 з 5719
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| PDS-408G/AC-US | Microchip Technology |
Description: 8-PORT POE SWITCH BT 480W AC US Packaging: Bulk Connector Type: RJ45 Voltage - Input: 100 ~ 240VAC Type: Switch - Managed Configuration: Fixed Operating Temperature: 0°C ~ 45°C Number of Ports: 11 Fiber Type: Gigabit (Multimode) Copper Ports: 8 Copper Type: 10/100/1000 Fiber Ports: 2 SFP/XFP Type: SFP, Gigabit PoE Ports: 8 SFP/XFP Ports: 1 Part Status: Active |
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| 2N3822 | Microchip Technology |
 Description: JFET N-CH 50V TO72Packaging: Bulk Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V Voltage - Breakdown (V(BR)GSS): 50 V Supplier Device Package: TO-72 Part Status: Discontinued at Digi-Key Drain to Source Voltage (Vdss): 50 V Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 15 V Grade: Military Qualification: MIL-PRF-19500/375 |
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MXSMBG15CA | Microchip Technology |
Description: TVS DIODE 15VWM 24.4VC SMBG |
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| SG1845L-DESC | Microchip Technology |
Description: CURRENT MODE PWMS, HIGH-RELIABIL |
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| SG1845J-DESC | Microchip Technology |
Description: CURRENT MODE PWMS, HIGH-RELIABIL Packaging: Tray Package / Case: 14-CDIP (0.300", 7.62mm) Output Type: Transistor Driver Mounting Type: Through Hole Function: Step-Up/Step-Down Operating Temperature: -55°C ~ 125°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: 100Hz ~ 500kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V Supplier Device Package: 14-CERDIP Synchronous Rectifier: Yes Output Phases: 1 Duty Cycle (Max): 48% Clock Sync: No Grade: Military Number of Outputs: 1 Qualification: MIL-STD-883 |
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| SG1845J | Microchip Technology |
Description: CURRENT MODE PWMS, HIGH-RELIABIL Packaging: Tray Package / Case: 14-CDIP (0.300", 7.62mm) Output Type: Transistor Driver Mounting Type: Through Hole Function: Step-Up/Step-Down Operating Temperature: -55°C ~ 125°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: 100Hz ~ 500kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V Supplier Device Package: 14-CERDIP Synchronous Rectifier: Yes Output Phases: 1 Duty Cycle (Max): 48% Clock Sync: No Grade: Military Number of Outputs: 1 Qualification: MIL-STD-883 |
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| SG1845J-883B | Microchip Technology |
Description: CURRENT MODE PWMS, HIGH-RELIABIL Packaging: Tray Package / Case: 14-CDIP (0.300", 7.62mm) Output Type: Transistor Driver Mounting Type: Through Hole Function: Step-Up/Step-Down Operating Temperature: -55°C ~ 125°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: 100Hz ~ 500kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V Supplier Device Package: 14-CERDIP Synchronous Rectifier: Yes Output Phases: 1 Duty Cycle (Max): 48% Clock Sync: No Grade: Military Number of Outputs: 1 Qualification: MIL-STD-883 |
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| SG1845L | Microchip Technology |
Description: CURRENT MODE PWMS, HIGH-RELIABIL |
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JAN1N5529B-1 | Microchip Technology |
Description: DIODE ZENER 9.1V 500MW DO204AH Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V Qualification: MIL-PRF-19500/437 |
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93C66-I/SM | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE 2MHZ Packaging: Bulk Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Part Status: Active Write Cycle Time - Word, Page: 2ms Memory Interface: Microwire Memory Organization: 512 x 8, 256 x 16 DigiKey Programmable: Not Verified |
на замовлення 1454 шт: термін постачання 21-31 дні (днів) |
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| AT91SAM9G20B-W | Microchip Technology | Description: IC MCU 32BIT 64KB ROM 217BGA |
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| JANS1N4991US/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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1N4764AG/TR | Microchip Technology |
Description: DIODE ZENER 100V 1W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 350 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 76 V |
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1N4764AGE3 | Microchip Technology |
Description: DIODE ZENER 100V 1W DO41 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 350 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 76 V |
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| 1N4576A-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-35 (DO-204AH) Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
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1N4570A | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
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JAN1N4575A-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V Grade: Military Qualification: MIL-PRF-19500/452 |
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1N4570-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
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1N4570A-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
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| 1N4575A-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TA) Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-35 (DO-204AH) Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
товару немає в наявності |
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JAN1N4570A-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V Grade: Military Qualification: MIL-PRF-19500/452 |
товару немає в наявності |
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JAN1N4576A-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V Grade: Military Qualification: MIL-PRF-19500/452 |
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JANTX1N4576A-1/TR | Microchip Technology | Description: DIODE ZENER TEMP COMPENSATED |
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JANTX1N4575A-1/TR | Microchip Technology | Description: DIODE ZENER TEMP COMPENSATED |
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| JAN1N4575AUR-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V Grade: Military Qualification: MIL-PRF-19500/452 |
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| JAN1N4570AUR-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AA Grade: Military Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V Qualification: MIL-PRF-19500/452 |
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JAN1N4571A-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V Grade: Military Qualification: MIL-PRF-19500/452 |
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1N4572A-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED |
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1N4571A-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED |
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1N4572A/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED |
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1N4571-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED |
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1N4572-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
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1N4571A-1E3/TR | Microchip Technology | Description: DIODE ZENER TEMP COMPENSATED |
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| JANTX1N6335 | Microchip Technology | Description: ZENER DIODE |
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1N5248B/TR | Microchip Technology |
Description: DIODE ZENER 18V 500MW DO204AH Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 21 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 14 V |
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1N5248BE3/TR | Microchip Technology |
Description: DIODE ZENER 18V 500MW DO204AH Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 21 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 14 V |
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1N5248BUR-1E3/TR | Microchip Technology |
Description: DIODE ZENER 18V 500MW DO213AA Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 21 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 14 V |
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PIC18F66K40-E/MR | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 64VQFN |
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| EPS15SMHR2 | Microchip Technology |
Description: TVS Packaging: Bulk Part Status: Active |
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| VT-803-EFJ-287C-20M0000000 | Microchip Technology |
Description: OSCILLATOR CMOS SMD |
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| VT-803-GFE-207C-40M0000000 | Microchip Technology |
Description: OSCILLATOR CMOS SMD |
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PIC16F527T-I/SS | Microchip Technology |
Description: IC MCU 8BIT 1.5KB FLASH 20SSOP Packaging: Tape & Reel (TR) Package / Case: 20-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 1.5KB (1K x 12) RAM Size: 68 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 64 x 8 Core Processor: PIC Data Converters: A/D 8x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V Peripherals: Brown-out Detect/Reset, POR, WDT Supplier Device Package: 20-SSOP Number of I/O: 17 DigiKey Programmable: Not Verified |
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PIC16F527T-I/ML | Microchip Technology |
Description: IC MCU 8BIT 1.5KB FLASH 20QFN Packaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 1.5KB (1K x 12) RAM Size: 68 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 64 x 8 Core Processor: PIC Data Converters: A/D 8x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V Peripherals: Brown-out Detect/Reset, POR, WDT Supplier Device Package: 20-QFN (4x4) Number of I/O: 17 DigiKey Programmable: Not Verified |
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PIC16F527T-I/ML | Microchip Technology |
Description: IC MCU 8BIT 1.5KB FLASH 20QFN Packaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 1.5KB (1K x 12) RAM Size: 68 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 64 x 8 Core Processor: PIC Data Converters: A/D 8x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V Peripherals: Brown-out Detect/Reset, POR, WDT Supplier Device Package: 20-QFN (4x4) Number of I/O: 17 DigiKey Programmable: Not Verified |
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PIC32MZ2064DAB169T-I/HF | Microchip Technology |
Description: IC MCU 32BIT 2MB FLASH 169LFBGA |
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PIC32MZ2064DAB169T-I/HF | Microchip Technology |
Description: IC MCU 32BIT 2MB FLASH 169LFBGA |
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| MX2N4856UB/TR | Microchip Technology |
Description: JFET Packaging: Tape & Reel (TR) Part Status: Active |
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| MX2N4857UB/TR | Microchip Technology |
Description: JFET Packaging: Tape & Reel (TR) Part Status: Active |
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| MX2N4859UB/TR | Microchip Technology |
Description: JFET Packaging: Tape & Reel (TR) Part Status: Active |
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2N4856UB/TR | Microchip Technology |
Description: JFET N-CH 40V Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: UB Part Status: Active Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Resistance - RDS(On): 25 Ohms Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V |
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2N4859UB/TR | Microchip Technology |
Description: JFET N-CH 30V Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 360 mW Resistance - RDS(On): 25 Ohms Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V |
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2N4857UB/TR | Microchip Technology |
Description: JFET N-CH 40V Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: UB Part Status: Active Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Resistance - RDS(On): 40 Ohms Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V |
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| MV2N4857UB/TR | Microchip Technology |
Description: JFET Packaging: Tape & Reel (TR) Part Status: Active |
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| MV2N4859UB/TR | Microchip Technology |
Description: JFET Packaging: Tape & Reel (TR) Part Status: Active |
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| MV2N4856UB/TR | Microchip Technology |
Description: JFET Packaging: Tape & Reel (TR) Part Status: Active |
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 |
JAN2N4854U/TR | Microchip Technology |
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 600mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-SMD Part Status: Active |
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 |
1N3613/TR | Microchip Technology |
Description: STD RECTIFIER |
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 |
JAN1N3613 | Microchip Technology |
Description: DIODE GEN PURP 600V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 300 V Qualification: MIL-PRF-19500/228 |
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 |
JAN1N3613/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 300 V Qualification: MIL-PRF-19500/228 |
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|
|
JANTX1N3613/TR | Microchip Technology | Description: HIGH VOLTAGE RECTIFIER |
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В кошику од. на суму грн. |
| PDS-408G/AC-US |
Виробник: Microchip Technology
Description: 8-PORT POE SWITCH BT 480W AC US
Packaging: Bulk
Connector Type: RJ45
Voltage - Input: 100 ~ 240VAC
Type: Switch - Managed
Configuration: Fixed
Operating Temperature: 0°C ~ 45°C
Number of Ports: 11
Fiber Type: Gigabit (Multimode)
Copper Ports: 8
Copper Type: 10/100/1000
Fiber Ports: 2
SFP/XFP Type: SFP, Gigabit
PoE Ports: 8
SFP/XFP Ports: 1
Part Status: Active
Description: 8-PORT POE SWITCH BT 480W AC US
Packaging: Bulk
Connector Type: RJ45
Voltage - Input: 100 ~ 240VAC
Type: Switch - Managed
Configuration: Fixed
Operating Temperature: 0°C ~ 45°C
Number of Ports: 11
Fiber Type: Gigabit (Multimode)
Copper Ports: 8
Copper Type: 10/100/1000
Fiber Ports: 2
SFP/XFP Type: SFP, Gigabit
PoE Ports: 8
SFP/XFP Ports: 1
Part Status: Active
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| 2N3822 |
|
Виробник: Microchip Technology
Description: JFET N-CH 50V TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-72
Part Status: Discontinued at Digi-Key
Drain to Source Voltage (Vdss): 50 V
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/375
Description: JFET N-CH 50V TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-72
Part Status: Discontinued at Digi-Key
Drain to Source Voltage (Vdss): 50 V
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500/375
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| MXSMBG15CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 24.4VC SMBG
Description: TVS DIODE 15VWM 24.4VC SMBG
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| SG1845L-DESC |
|
Виробник: Microchip Technology
Description: CURRENT MODE PWMS, HIGH-RELIABIL
Description: CURRENT MODE PWMS, HIGH-RELIABIL
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| SG1845J-DESC |
|
Виробник: Microchip Technology
Description: CURRENT MODE PWMS, HIGH-RELIABIL
Packaging: Tray
Package / Case: 14-CDIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up/Step-Down
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 100Hz ~ 500kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-CERDIP
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Grade: Military
Number of Outputs: 1
Qualification: MIL-STD-883
Description: CURRENT MODE PWMS, HIGH-RELIABIL
Packaging: Tray
Package / Case: 14-CDIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up/Step-Down
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 100Hz ~ 500kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-CERDIP
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Grade: Military
Number of Outputs: 1
Qualification: MIL-STD-883
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| SG1845J |
|
Виробник: Microchip Technology
Description: CURRENT MODE PWMS, HIGH-RELIABIL
Packaging: Tray
Package / Case: 14-CDIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up/Step-Down
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 100Hz ~ 500kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-CERDIP
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Grade: Military
Number of Outputs: 1
Qualification: MIL-STD-883
Description: CURRENT MODE PWMS, HIGH-RELIABIL
Packaging: Tray
Package / Case: 14-CDIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up/Step-Down
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 100Hz ~ 500kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-CERDIP
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Grade: Military
Number of Outputs: 1
Qualification: MIL-STD-883
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| SG1845J-883B |
|
Виробник: Microchip Technology
Description: CURRENT MODE PWMS, HIGH-RELIABIL
Packaging: Tray
Package / Case: 14-CDIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up/Step-Down
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 100Hz ~ 500kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-CERDIP
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Grade: Military
Number of Outputs: 1
Qualification: MIL-STD-883
Description: CURRENT MODE PWMS, HIGH-RELIABIL
Packaging: Tray
Package / Case: 14-CDIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up/Step-Down
Operating Temperature: -55°C ~ 125°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 100Hz ~ 500kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-CERDIP
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Grade: Military
Number of Outputs: 1
Qualification: MIL-STD-883
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| SG1845L |
|
Виробник: Microchip Technology
Description: CURRENT MODE PWMS, HIGH-RELIABIL
Description: CURRENT MODE PWMS, HIGH-RELIABIL
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В кошику
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| JAN1N5529B-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 9.1V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Qualification: MIL-PRF-19500/437
Description: DIODE ZENER 9.1V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Qualification: MIL-PRF-19500/437
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| 93C66-I/SM |
|
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 2MHZ
Packaging: Bulk
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 2MHZ
Packaging: Bulk
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
на замовлення 1454 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 190+ | 112.23 грн |
| AT91SAM9G20B-W |
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB ROM 217BGA
Description: IC MCU 32BIT 64KB ROM 217BGA
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| JANS1N4991US/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
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| 1N4764AG/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER 100V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Description: DIODE ZENER 100V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
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| 1N4764AGE3 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 100V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Description: DIODE ZENER 100V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
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В кошику
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| 1N4576A-1/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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| 1N4570A |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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| JAN1N4575A-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/452
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/452
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В кошику
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| 1N4570-1/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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В кошику
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| 1N4570A-1/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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В кошику
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| 1N4575A-1/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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В кошику
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| JAN1N4570A-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/452
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/452
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В кошику
од. на суму грн.
| JAN1N4576A-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/452
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/452
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| JANTX1N4576A-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Description: DIODE ZENER TEMP COMPENSATED
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| JANTX1N4575A-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Description: DIODE ZENER TEMP COMPENSATED
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| JAN1N4575AUR-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/452
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/452
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| JAN1N4570AUR-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/452
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/452
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| JAN1N4571A-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/452
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/452
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| 1N4572A-1/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Description: DIODE ZENER TEMP COMPENSATED
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од. на суму грн.
| 1N4571A-1/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Description: DIODE ZENER TEMP COMPENSATED
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| 1N4572A/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Description: DIODE ZENER TEMP COMPENSATED
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од. на суму грн.
| 1N4571-1/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Description: DIODE ZENER TEMP COMPENSATED
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В кошику
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| 1N4572-1/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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| 1N4571A-1E3/TR |
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Description: DIODE ZENER TEMP COMPENSATED
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| JANTX1N6335 |
Виробник: Microchip Technology
Description: ZENER DIODE
Description: ZENER DIODE
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| 1N5248B/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
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од. на суму грн.
| 1N5248BE3/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
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В кошику
од. на суму грн.
| 1N5248BUR-1E3/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 18V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Description: DIODE ZENER 18V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
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од. на суму грн.
| PIC18F66K40-E/MR |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 64VQFN
Description: IC MCU 8BIT 64KB FLASH 64VQFN
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| VT-803-EFJ-287C-20M0000000 |
|
Виробник: Microchip Technology
Description: OSCILLATOR CMOS SMD
Description: OSCILLATOR CMOS SMD
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| VT-803-GFE-207C-40M0000000 |
|
Виробник: Microchip Technology
Description: OSCILLATOR CMOS SMD
Description: OSCILLATOR CMOS SMD
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В кошику
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| PIC16F527T-I/SS |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 1.5KB FLASH 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1.5KB (1K x 12)
RAM Size: 68 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 64 x 8
Core Processor: PIC
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V
Peripherals: Brown-out Detect/Reset, POR, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 1.5KB FLASH 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1.5KB (1K x 12)
RAM Size: 68 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 64 x 8
Core Processor: PIC
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V
Peripherals: Brown-out Detect/Reset, POR, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
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| PIC16F527T-I/ML |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 1.5KB FLASH 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1.5KB (1K x 12)
RAM Size: 68 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 64 x 8
Core Processor: PIC
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V
Peripherals: Brown-out Detect/Reset, POR, WDT
Supplier Device Package: 20-QFN (4x4)
Number of I/O: 17
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 1.5KB FLASH 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1.5KB (1K x 12)
RAM Size: 68 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 64 x 8
Core Processor: PIC
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V
Peripherals: Brown-out Detect/Reset, POR, WDT
Supplier Device Package: 20-QFN (4x4)
Number of I/O: 17
DigiKey Programmable: Not Verified
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| PIC16F527T-I/ML |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 1.5KB FLASH 20QFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1.5KB (1K x 12)
RAM Size: 68 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 64 x 8
Core Processor: PIC
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V
Peripherals: Brown-out Detect/Reset, POR, WDT
Supplier Device Package: 20-QFN (4x4)
Number of I/O: 17
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 1.5KB FLASH 20QFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1.5KB (1K x 12)
RAM Size: 68 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 64 x 8
Core Processor: PIC
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V
Peripherals: Brown-out Detect/Reset, POR, WDT
Supplier Device Package: 20-QFN (4x4)
Number of I/O: 17
DigiKey Programmable: Not Verified
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| PIC32MZ2064DAB169T-I/HF |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
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| PIC32MZ2064DAB169T-I/HF |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
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В кошику
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| 2N4856UB/TR |
Виробник: Microchip Technology
Description: JFET N-CH 40V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Description: JFET N-CH 40V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
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В кошику
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| 2N4859UB/TR |
Виробник: Microchip Technology
Description: JFET N-CH 30V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Description: JFET N-CH 30V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 360 mW
Resistance - RDS(On): 25 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
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| 2N4857UB/TR |
Виробник: Microchip Technology
Description: JFET N-CH 40V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Description: JFET N-CH 40V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Power - Max: 360 mW
Resistance - RDS(On): 40 Ohms
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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В кошику
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| JAN2N4854U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 600mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Part Status: Active
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 600mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Part Status: Active
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| 1N3613/TR |
|
Виробник: Microchip Technology
Description: STD RECTIFIER
Description: STD RECTIFIER
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| JAN1N3613 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Qualification: MIL-PRF-19500/228
Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Qualification: MIL-PRF-19500/228
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| JAN1N3613/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Qualification: MIL-PRF-19500/228
Description: DIODE GEN PURP 600V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Qualification: MIL-PRF-19500/228
товару немає в наявності
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од. на суму грн.
| JANTX1N3613/TR |
Виробник: Microchip Technology
Description: HIGH VOLTAGE RECTIFIER
Description: HIGH VOLTAGE RECTIFIER
товару немає в наявності
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од. на суму грн.