Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (338244) > Сторінка 1430 з 5638
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
JAN1N4976CUS | Microchip Technology |
 Description: DIODE ZENER 56V 5W D5B |
товар відсутній |
|
 |
JAN1N4976D | Microchip Technology |
Description: DIODE ZENER 56V 5W E AXIAL |
товар відсутній |
|
|
|
JAN1N4976DUS | Microchip Technology |
Description: DIODE ZENER 56V 5W D5B |
товар відсутній |
|
|
|
JAN1N4979C | Microchip Technology |
Description: DIODE ZENER 75V 5W E AXIAL |
товар відсутній |
|
|
|
JAN1N4979CUS | Microchip Technology |
Description: DIODE ZENER 75V 5W D5B |
товар відсутній |
|
|
|
JAN1N4979D | Microchip Technology |
Description: DIODE ZENER 75V 5W E AXIAL |
товар відсутній |
|
|
|
JAN1N4979DUS | Microchip Technology |
Description: DIODE ZENER 75V 5W D5B |
товар відсутній |
|
|
|
JAN1N4976 | Microchip Technology |
Description: DIODE ZENER 56V 5W AXIAL |
товар відсутній |
|
 |
JAN1N4976US | Microchip Technology |
Description: DIODE ZENER 56V 5W D5B |
товар відсутній |
|
|
|
JAN1N4979 | Microchip Technology |
Description: DIODE ZENER 75V 5W AXIAL |
товар відсутній |
|
|
|
JAN1N4979US | Microchip Technology |
Description: DIODE ZENER 75V 5W D5B |
товар відсутній |
|
|
|
JANTX1N4976 | Microchip Technology |
Description: DIODE ZENER 56V 5W AXIAL |
товар відсутній |
|
|
|
JANTX1N4976US | Microchip Technology |
Description: DIODE ZENER 56V 5W D5B |
товар відсутній |
|
|
|
JANTX1N4979US | Microchip Technology |
Description: DIODE ZENER 75V 5W D5B |
товар відсутній |
|
|
|
JANTXV1N4976 | Microchip Technology |
Description: DIODE ZENER 56V 5W AXIAL |
товар відсутній |
|
|
|
JANTXV1N4976US | Microchip Technology |
Description: DIODE ZENER 56V 5W D5B |
товар відсутній |
|
 |
JANTXV1N4979 | Microchip Technology |
Description: DIODE ZENER 75V 5W AXIAL Packaging: Bulk Tolerance: ±5% Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 55 Ohms Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 56 V Grade: Military Qualification: MIL-PRF-19500/356 |
товар відсутній |
|
 |
JANTXV1N4979US | Microchip Technology |
Description: DIODE ZENER 75V 5W D5B Packaging: Bulk Tolerance: ±5% Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: D-5B Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 56 V Grade: Military Qualification: MIL-PRF-19500/356 |
товар відсутній |
|
| CD5370B | Microchip Technology |
Description: VOLTAGE REGULATOR |
товар відсутній |
||
| CD5374B | Microchip Technology |
Description: VOLTAGE REGULATOR |
товар відсутній |
||
| JANS1N4976/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
товар відсутній |
||
| JANS1N4976US/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
товар відсутній |
||
| JANS1N4979US/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
товар відсутній |
||
 |
JANTX1N4976/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
товар відсутній |
|
|
|
JANTX1N4979/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
товар відсутній |
|
 |
JANTX1N4979US/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
товар відсутній |
|
 |
GMP4211-GM1/TR | Microchip Technology |
Description: SI PIN NON HERMETIC PLASTIC SMT |
товар відсутній |
|
|
|
GMP4211-GM1/TR | Microchip Technology |
Description: SI PIN NON HERMETIC PLASTIC SMT |
товар відсутній |
|
 |
GMP4212-GM1/TR | Microchip Technology |
Description: SI PIN NON HERMETIC PLASTIC SMT Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Diode Type: PIN - Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 0.25pF @ 10V, 1MHz Resistance @ If, F: 1.5Ohm @ 20mA, 100MHz Voltage - Peak Reverse (Max): 100V Supplier Device Package: 0805 |
товар відсутній |
|
|
|
GMP4212-GM1/TR | Microchip Technology |
Description: SI PIN NON HERMETIC PLASTIC SMT Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Diode Type: PIN - Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 0.25pF @ 10V, 1MHz Resistance @ If, F: 1.5Ohm @ 20mA, 100MHz Voltage - Peak Reverse (Max): 100V Supplier Device Package: 0805 |
товар відсутній |
|
|
|
GMP4215-GM1/TR | Microchip Technology |
Description: SI PIN NON HERMETIC PLASTIC SMT |
товар відсутній |
|
|
|
GMP4215-GM1/TR | Microchip Technology |
Description: SI PIN NON HERMETIC PLASTIC SMT |
товар відсутній |
|
-Axial-Microchip.JPG "JAN1N4104D-1") |
JAN1N4104D-1 | Microchip Technology |
Description: DIODE ZENER 10V DO35 Packaging: Bulk Tolerance: ±1% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-35 (DO-204AH) Grade: Military Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 7.6 V Qualification: MIL-PRF-19500/435 |
товар відсутній |
|
| MASMLG45A | Microchip Technology |
Description: TVS DIODE 45VWM 72.7VC SMLG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41.2A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: SMLG (DO-215AB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 72.7V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active |
товар відсутній |
||
| MASMLG45Ae3 | Microchip Technology |
Description: TVS DIODE 45VWM 72.7VC SMLG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41.2A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: SMLG (DO-215AB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 72.7V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active |
товар відсутній |
||
| MASMLG45CA | Microchip Technology |
Description: TVS DIODE 45VWM 72.7VC SMLG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41.2A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: SMLG (DO-215AB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 72.7V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active |
товар відсутній |
||
| MASMLG45CAe3 | Microchip Technology |
Description: TVS DIODE 45VWM 72.7VC SMLG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41.2A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: SMLG (DO-215AB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 72.7V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active |
товар відсутній |
||
| MASMLG48A | Microchip Technology |
Description: TVS DIODE 48VWM 77.4VC SMLG |
товар відсутній |
||
| MASMLG48Ae3 | Microchip Technology |
Description: TVS DIODE 48VWM 77.4VC SMLG |
товар відсутній |
||
| MASMLG48CA | Microchip Technology |
Description: TVS DIODE 48VWM 77.4VC SMLG |
товар відсутній |
||
| MG1006-83B | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC STUD Packaging: Bag Diode Type: PIN - Single Voltage - Peak Reverse (Max): 10V Part Status: Active Current - Max: 700 mA Power Dissipation (Max): 100 mW |
товар відсутній |
||
| MG1006-M11 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC PILL Packaging: Tray Package / Case: Stud Diode Type: PIN - Single Voltage - Peak Reverse (Max): 10V Part Status: Active Current - Max: 700 mA Power Dissipation (Max): 100 mW |
товар відсутній |
||
| MG1007-42 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC STUD Packaging: Bag Package / Case: Stud Diode Type: PIN - Single Voltage - Peak Reverse (Max): 10V Part Status: Active Current - Max: 1.2 A Power Dissipation (Max): 250 mW |
товар відсутній |
||
| MG1008-42 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC STUD Packaging: Bag Package / Case: Stud Diode Type: PIN - Single Voltage - Peak Reverse (Max): 10V Part Status: Active Current - Max: 1.6 A Power Dissipation (Max): 500 mW |
товар відсутній |
||
| MG1009-M11 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC PILL Packaging: Tray Package / Case: Stud Diode Type: PIN - Single Voltage - Peak Reverse (Max): 8V Part Status: Active Current - Max: 500 mA Power Dissipation (Max): 50 mW |
товар відсутній |
||
| MG1010-M11 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC PILL Packaging: Tray Package / Case: Stud Diode Type: PIN - Single Voltage - Peak Reverse (Max): 8V Part Status: Active Current - Max: 800 mA Power Dissipation (Max): 100 mW |
товар відсутній |
||
| MG1011-42 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC STUD Packaging: Bag Package / Case: Stud Diode Type: PIN - Single Voltage - Peak Reverse (Max): 8V Part Status: Active Current - Max: 1.2 A Power Dissipation (Max): 250 mW |
товар відсутній |
||
| MG1020-M16 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC STUD Packaging: Bag Package / Case: Stud Diode Type: PIN - Single Voltage - Peak Reverse (Max): 5.5V Part Status: Active Current - Max: 1.6 A Power Dissipation (Max): 250 mW |
товар відсутній |
||
| MG1021-M16 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC STUD Packaging: Bag Package / Case: Stud Diode Type: PIN - Single Voltage - Peak Reverse (Max): 4V Part Status: Active Current - Max: 800 mA Power Dissipation (Max): 50 mW |
товар відсутній |
||
| MG1025-M16 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC STUD Packaging: Bag Package / Case: Stud Diode Type: PIN - Single Voltage - Peak Reverse (Max): 4.5V Part Status: Active Current - Max: 1 A Power Dissipation (Max): 20 mW |
товар відсутній |
||
| MG1038-M16 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC STUD Packaging: Bag Package / Case: Stud Diode Type: PIN - Single Voltage - Peak Reverse (Max): 5V Part Status: Active Current - Max: 1.2 A Power Dissipation (Max): 50 mW |
товар відсутній |
||
| MG1052-30 | Microchip Technology |
Description: GAAS GUNN EPI UP HERMETIC PILL Packaging: Tray Package / Case: Stud Diode Type: PIN - Single Voltage - Peak Reverse (Max): 8V Part Status: Active Current - Max: 140 mA Power Dissipation (Max): 10 mW |
товар відсутній |
||
| MG1054-30 | Microchip Technology |
Description: GAAS GUNN EPI UP HERMETIC PILL Packaging: Tray Package / Case: Stud Diode Type: PIN - Single Voltage - Peak Reverse (Max): 5V Part Status: Active Current - Max: 200 mA Power Dissipation (Max): 5 mW |
товар відсутній |
||
| MG1056-30 | Microchip Technology |
Description: GAAS GUNN EPI UP HERMETIC PILL Packaging: Tray Package / Case: Stud Diode Type: PIN - Single Voltage - Peak Reverse (Max): 8V Part Status: Active Current - Max: 200 mA Power Dissipation (Max): 20 mW |
товар відсутній |
||
| MG1400-M16 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC STUD Packaging: Bag Package / Case: Stud Part Status: Active |
товар відсутній |
||
| MG1643-83B | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC STUD Packaging: Bag Part Status: Active |
товар відсутній |
||
| MG1650-M16 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC STUD Packaging: Bag Package / Case: Stud Part Status: Active |
товар відсутній |
||
| MG1657-M16 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC STUD Packaging: Bag Package / Case: Stud Part Status: Active |
товар відсутній |
||
| MG49123-42 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC STUD Packaging: Tray Package / Case: Stud Part Status: Active |
товар відсутній |
||
| MG49158-M11 | Microchip Technology |
Description: GAAS GUNN EPI DOWN HERMETIC PILL Packaging: Tray Package / Case: Stud Part Status: Active |
товар відсутній |
| JANTXV1N4979 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 75V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 55 Ohms
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 56 V
Grade: Military
Qualification: MIL-PRF-19500/356
Description: DIODE ZENER 75V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 55 Ohms
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 56 V
Grade: Military
Qualification: MIL-PRF-19500/356
товар відсутній
| JANTXV1N4979US |
|
Виробник: Microchip Technology
Description: DIODE ZENER 75V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: D-5B
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 56 V
Grade: Military
Qualification: MIL-PRF-19500/356
Description: DIODE ZENER 75V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: D-5B
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 56 V
Grade: Military
Qualification: MIL-PRF-19500/356
товар відсутній
| GMP4211-GM1/TR |
|
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC PLASTIC SMT
Description: SI PIN NON HERMETIC PLASTIC SMT
товар відсутній
| GMP4211-GM1/TR |
|
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC PLASTIC SMT
Description: SI PIN NON HERMETIC PLASTIC SMT
товар відсутній
| GMP4212-GM1/TR |
|
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC PLASTIC SMT
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 0.25pF @ 10V, 1MHz
Resistance @ If, F: 1.5Ohm @ 20mA, 100MHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: 0805
Description: SI PIN NON HERMETIC PLASTIC SMT
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 0.25pF @ 10V, 1MHz
Resistance @ If, F: 1.5Ohm @ 20mA, 100MHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: 0805
товар відсутній
| GMP4212-GM1/TR |
|
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC PLASTIC SMT
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 0.25pF @ 10V, 1MHz
Resistance @ If, F: 1.5Ohm @ 20mA, 100MHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: 0805
Description: SI PIN NON HERMETIC PLASTIC SMT
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 0.25pF @ 10V, 1MHz
Resistance @ If, F: 1.5Ohm @ 20mA, 100MHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: 0805
товар відсутній
| GMP4215-GM1/TR |
|
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC PLASTIC SMT
Description: SI PIN NON HERMETIC PLASTIC SMT
товар відсутній
| GMP4215-GM1/TR |
|
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC PLASTIC SMT
Description: SI PIN NON HERMETIC PLASTIC SMT
товар відсутній
| JAN1N4104D-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V DO35
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 7.6 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 10V DO35
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 7.6 V
Qualification: MIL-PRF-19500/435
товар відсутній
| MASMLG45A |
|
Виробник: Microchip Technology
Description: TVS DIODE 45VWM 72.7VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.2A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMLG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 45VWM 72.7VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.2A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMLG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| MASMLG45Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 45VWM 72.7VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.2A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMLG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 45VWM 72.7VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.2A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMLG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| MASMLG45CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 45VWM 72.7VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.2A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMLG (DO-215AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 45VWM 72.7VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.2A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMLG (DO-215AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| MASMLG45CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 45VWM 72.7VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.2A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMLG (DO-215AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 45VWM 72.7VC SMLG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.2A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SMLG (DO-215AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| MG1006-83B |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 10V
Part Status: Active
Current - Max: 700 mA
Power Dissipation (Max): 100 mW
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 10V
Part Status: Active
Current - Max: 700 mA
Power Dissipation (Max): 100 mW
товар відсутній
| MG1006-M11 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 10V
Part Status: Active
Current - Max: 700 mA
Power Dissipation (Max): 100 mW
Description: GAAS GUNN EPI DOWN HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 10V
Part Status: Active
Current - Max: 700 mA
Power Dissipation (Max): 100 mW
товар відсутній
| MG1007-42 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 10V
Part Status: Active
Current - Max: 1.2 A
Power Dissipation (Max): 250 mW
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 10V
Part Status: Active
Current - Max: 1.2 A
Power Dissipation (Max): 250 mW
товар відсутній
| MG1008-42 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 10V
Part Status: Active
Current - Max: 1.6 A
Power Dissipation (Max): 500 mW
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 10V
Part Status: Active
Current - Max: 1.6 A
Power Dissipation (Max): 500 mW
товар відсутній
| MG1009-M11 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 8V
Part Status: Active
Current - Max: 500 mA
Power Dissipation (Max): 50 mW
Description: GAAS GUNN EPI DOWN HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 8V
Part Status: Active
Current - Max: 500 mA
Power Dissipation (Max): 50 mW
товар відсутній
| MG1010-M11 |
|
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 8V
Part Status: Active
Current - Max: 800 mA
Power Dissipation (Max): 100 mW
Description: GAAS GUNN EPI DOWN HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 8V
Part Status: Active
Current - Max: 800 mA
Power Dissipation (Max): 100 mW
товар відсутній
| MG1011-42 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 8V
Part Status: Active
Current - Max: 1.2 A
Power Dissipation (Max): 250 mW
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 8V
Part Status: Active
Current - Max: 1.2 A
Power Dissipation (Max): 250 mW
товар відсутній
| MG1020-M16 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 5.5V
Part Status: Active
Current - Max: 1.6 A
Power Dissipation (Max): 250 mW
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 5.5V
Part Status: Active
Current - Max: 1.6 A
Power Dissipation (Max): 250 mW
товар відсутній
| MG1021-M16 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 4V
Part Status: Active
Current - Max: 800 mA
Power Dissipation (Max): 50 mW
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 4V
Part Status: Active
Current - Max: 800 mA
Power Dissipation (Max): 50 mW
товар відсутній
| MG1025-M16 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 4.5V
Part Status: Active
Current - Max: 1 A
Power Dissipation (Max): 20 mW
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 4.5V
Part Status: Active
Current - Max: 1 A
Power Dissipation (Max): 20 mW
товар відсутній
| MG1038-M16 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 5V
Part Status: Active
Current - Max: 1.2 A
Power Dissipation (Max): 50 mW
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 5V
Part Status: Active
Current - Max: 1.2 A
Power Dissipation (Max): 50 mW
товар відсутній
| MG1052-30 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI UP HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 8V
Part Status: Active
Current - Max: 140 mA
Power Dissipation (Max): 10 mW
Description: GAAS GUNN EPI UP HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 8V
Part Status: Active
Current - Max: 140 mA
Power Dissipation (Max): 10 mW
товар відсутній
| MG1054-30 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI UP HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 5V
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 5 mW
Description: GAAS GUNN EPI UP HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 5V
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 5 mW
товар відсутній
| MG1056-30 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI UP HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 8V
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 20 mW
Description: GAAS GUNN EPI UP HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 8V
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 20 mW
товар відсутній
| MG1400-M16 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Part Status: Active
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Part Status: Active
товар відсутній
| MG1643-83B |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Part Status: Active
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Part Status: Active
товар відсутній
| MG1650-M16 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Part Status: Active
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Part Status: Active
товар відсутній
| MG1657-M16 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Part Status: Active
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Part Status: Active
товар відсутній
| MG49123-42 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Tray
Package / Case: Stud
Part Status: Active
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Tray
Package / Case: Stud
Part Status: Active
товар відсутній
| MG49158-M11 |
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Part Status: Active
Description: GAAS GUNN EPI DOWN HERMETIC PILL
Packaging: Tray
Package / Case: Stud
Part Status: Active
товар відсутній