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JANS2N5154U3 JANS2N5154U3 Microchip Technology Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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MASMBJ16Ae3 MASMBJ16Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMBJ16AE3 MSMBJ16AE3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MASMBJ16A MASMBJ16A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXSMBJ16A MXSMBJ16A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MXSMBJ16Ae3 MXSMBJ16Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MXLSMBJ16Ae3 MXLSMBJ16Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMBJ16A/TR Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MXLSMBJ16A MXLSMBJ16A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMBJ18CA MSMBJ18CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 18VWM 29.2VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMBJ18CAe3 MSMBJ18CAe3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 18VWM 29.2VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXLSMBJ18CAe3 MXLSMBJ18CAe3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 18VWM 29.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MASMBJ18CAe3 MASMBJ18CAe3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 18VWM 29.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXSMBJ18CA MXSMBJ18CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 18VWM 29.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MSMBJ18CA/TR MSMBJ18CA/TR Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 18VWM 29.2VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MASMBJ18CA MASMBJ18CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 18VWM 29.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXLSMBJ18CA MXLSMBJ18CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 18VWM 29.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MXSMBJ18CAe3 MXSMBJ18CAe3 Microchip Technology RF01000+%283%29.pdf Description: TVS DIODE 18VWM 29.2VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMBJ18CAE3/TR MSMBJ18CAE3/TR Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 18VWM 29.2VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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R20420 Microchip Technology 8545-coe-3-datasheet Description: RECTIFIER
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SY89834UMG-TR SY89834UMG-TR Microchip Technology sy89834u.pdf Description: IC CLK BUFFER 2:4 1GHZ 16MLF
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad, 16-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 16-MLF® (3x3)
Part Status: Active
Frequency - Max: 1 GHz
на замовлення 801 шт:
термін постачання 21-31 дні (днів)
1+780.27 грн
25+626.27 грн
100+569.55 грн
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SY100EP15VK4G SY100EP15VK4G Microchip Technology sy100ep15v.pdf Description: IC CLK BUFFER 2:4 2.5GHZ 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVECL, LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: HSTL, LVECL, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 5.5V
Ratio - Input:Output: 2:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TSSOP
Frequency - Max: 2.5 GHz
на замовлення 4243 шт:
термін постачання 21-31 дні (днів)
92+241.29 грн
Мінімальне замовлення: 92
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SY89851UMG-TR SY89851UMG-TR Microchip Technology sy89851u.pdf Description: IC CLK BUFFER 1:2 4GHZ 16MLF
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad, 16-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Translator
Input: CML, LVDS, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-MLF® (3x3)
Part Status: Active
Frequency - Max: 4 GHz
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+334.86 грн
25+269.62 грн
100+244.76 грн
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MASMCJ7.5Ae3 MASMCJ7.5Ae3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 7.5VWM 12.9VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 116.3A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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PIC16LF723A-I/SO PIC16LF723A-I/SO Microchip Technology 40001417C.pdf Description: IC MCU 8BIT 7KB FLASH 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
3+116.19 грн
Мінімальне замовлення: 3
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PIC16LF723A-I/ML PIC16LF723A-I/ML Microchip Technology 40001417C.pdf Description: IC MCU 8BIT 7KB FLASH 28QFN
Packaging: Tube
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 445 шт:
термін постачання 21-31 дні (днів)
3+133.14 грн
25+117.64 грн
100+105.80 грн
Мінімальне замовлення: 3
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PIC16LF723A-I/SS PIC16LF723A-I/SS Microchip Technology 40001417C.pdf Description: IC MCU 8BIT 7KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Verified
на замовлення 1686 шт:
термін постачання 21-31 дні (днів)
3+117.81 грн
25+103.59 грн
100+93.96 грн
Мінімальне замовлення: 3
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MA5KP58CAe3 MA5KP58CAe3 Microchip Technology rf01010_rb.pdf Description: TVS DIODE 58VWM 93.6VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MA5KP54CAe3 MA5KP54CAe3 Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 54VWM 87.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MA5KP58CA MA5KP58CA Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 58VWM 93.6VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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MA5KP6.0A MA5KP6.0A Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 6VWM 10.3VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 485A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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MA5KP51CAe3 MA5KP51CAe3 Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 51VWM 82.4VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MA5KP54CA MA5KP54CA Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 54VWM 87.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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24LC32AXT-E/ST 24LC32AXT-E/ST Microchip Technology 21713G.pdf Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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24LC32AXT-I/ST 24LC32AXT-I/ST Microchip Technology 21713G.pdf Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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24LC32AX-E/ST 24LC32AX-E/ST Microchip Technology 21713G.pdf Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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24LC32AX-I/ST 24LC32AX-I/ST Microchip Technology 21713G.pdf Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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MSC035SMA170S MSC035SMA170S Microchip Technology Microsemi_MSC035SMA170S_SiC_MOSFET_Datasheet_A.PDF Description: MOSFET SIC 1700V 35 MOHM TO-268
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ)
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+3192.89 грн
25+2835.07 грн
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MSC080SMA120B MSC080SMA120B Microchip Technology MSC080SMA120B-SiC-MOSFET-Datasheet.pdf Description: SICFET N-CH 1200V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
1+983.61 грн
25+873.05 грн
100+713.23 грн
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MSC035SMA070B4 MSC035SMA070B4 Microchip Technology 1244749-msc035sma070b4-datasheet Description: TRANS SJT N-CH 700V 77A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ)
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
1+1140.95 грн
25+1013.72 грн
100+881.26 грн
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MSC040SMA120B4 MSC040SMA120B4 Microchip Technology 1244456-msc040sma120b4-datasheet Description: SICFET N-CH 1200V 66A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 323W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
на замовлення 136 шт:
термін постачання 21-31 дні (днів)
1+1352.36 грн
25+1200.95 грн
100+1045.15 грн
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MSC040SMA120S MSC040SMA120S Microchip Technology 1244005-msc040sma120s-datasheet Description: SICFET N-CH 1200V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 303W
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+1947.04 грн
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MSC090SMA070S MSC090SMA070S Microchip Technology 1244481-msc090sma070s-datasheet Description: SICFET N-CH 700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Supplier Device Package: D3Pak
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
на замовлення 103 шт:
термін постачання 21-31 дні (днів)
1+655.20 грн
25+581.55 грн
100+472.59 грн
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MSC090SMA070B MSC090SMA070B Microchip Technology MSC090SMA070B-SiC-MOSFET-Datasheet.pdf Description: SICFET N-CH 700V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Supplier Device Package: TO-247-3
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
на замовлення 127 шт:
термін постачання 21-31 дні (днів)
1+404.26 грн
25+359.29 грн
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MSC050SDA070BCT MSC050SDA070BCT Microchip Technology 1244775-msc050sda070bct-datasheet Description: DIODE SIL CARB 700V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
1+1624.28 грн
25+1442.20 грн
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MSC030SDA070BCT MSC030SDA070BCT Microchip Technology 1244773-msc030sda070bct-datasheet Description: SIC SBD 700 V 30 A TO-247
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
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MSC050SDA070S MSC050SDA070S Microchip Technology 1244193-msc050sda070s-datasheet Description: DIODE SIL CARBIDE 700V 88A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
1+923.09 грн
25+820.03 грн
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MSC030SDA070K MSC030SDA070K Microchip Technology 1243329-msc030sda070k-datasheet Description: DIODE SIL CARB 700V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
1+513.99 грн
25+455.98 грн
100+411.11 грн
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MSC030SDA070S MSC030SDA070S Microchip Technology 1244228-msc030sda070s-datasheet Description: DIODE SIL CARBIDE 700V 60A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
1+612.43 грн
25+544.96 грн
100+457.44 грн
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MSC035SMA070S MSC035SMA070S Microchip Technology 1244334-msc035sma070s-datasheet Description: MOSFET N-CH 700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 206W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+1220.83 грн
25+1083.31 грн
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MSC035SMA070B MSC035SMA070B Microchip Technology MSC035SMA070B-SiC-MOSFET-Datasheet.pdf Description: MOSFET N-CH 700V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
1+809.32 грн
25+718.86 грн
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MSC030SDA070B MSC030SDA070B Microchip Technology 1243901-msc030sda070b-datasheet Description: DIODE SIL CARBIDE 700V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
1+542.23 грн
25+480.97 грн
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MSC080SMA120B4 MSC080SMA120B4 Microchip Technology MSC080SMA120B4-SiC-MOSFET-Datasheet.pdf Description: SICFET N-CH 1200V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
на замовлення 94 шт:
термін постачання 21-31 дні (днів)
1+709.26 грн
25+630.09 грн
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JANTX1N4989US JANTX1N4989US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 200V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 152 V
Qualification: MIL-PRF-19500/356
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PIC32MK1024MCF064T-I/MR PIC32MK1024MCF064T-I/MR Microchip Technology PIC32MK_GP_MC_Familly_Datasheet_60001402G.pdf Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
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PIC32MK1024MCF064T-I/MR PIC32MK1024MCF064T-I/MR Microchip Technology PIC32MK_GP_MC_Familly_Datasheet_60001402G.pdf Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
на замовлення 3890 шт:
термін постачання 21-31 дні (днів)
1+766.55 грн
25+676.12 грн
100+612.03 грн
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93C76CT-E/SN15KVAO 93C76CT-E/SN15KVAO Microchip Technology 21796M.pdf Description: IC EEPROM 8KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
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93C76C-I/W15K Microchip Technology 21796M.pdf Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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93C76C-I/S15K Microchip Technology 21796M.pdf Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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93C76C/WF15K Microchip Technology 21796M.pdf Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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JANS2N5154U3
JANS2N5154U3
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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MASMBJ16Ae3 10560-msmb-datasheet
MASMBJ16Ae3
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMBJ16AE3 10560-msmb-datasheet
MSMBJ16AE3
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MASMBJ16A 10560-msmb-datasheet
MASMBJ16A
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXSMBJ16A 10560-msmb-datasheet
MXSMBJ16A
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MXSMBJ16Ae3 10560-msmb-datasheet
MXSMBJ16Ae3
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MXLSMBJ16Ae3 10560-msmb-datasheet
MXLSMBJ16Ae3
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMBJ16A/TR 10560-msmb-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MXLSMBJ16A 10560-msmb-datasheet
MXLSMBJ16A
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMBJ18CA 10560-msmb-datasheet
MSMBJ18CA
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMBJ18CAe3 10560-msmb-datasheet
MSMBJ18CAe3
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXLSMBJ18CAe3 10560-msmb-datasheet
MXLSMBJ18CAe3
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MASMBJ18CAe3 10560-msmb-datasheet
MASMBJ18CAe3
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXSMBJ18CA 10560-msmb-datasheet
MXSMBJ18CA
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MSMBJ18CA/TR 10560-msmb-datasheet
MSMBJ18CA/TR
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MASMBJ18CA 10560-msmb-datasheet
MASMBJ18CA
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXLSMBJ18CA 10560-msmb-datasheet
MXLSMBJ18CA
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MXSMBJ18CAe3 RF01000+%283%29.pdf
MXSMBJ18CAe3
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMBJ18CAE3/TR 10560-msmb-datasheet
MSMBJ18CAE3/TR
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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R20420 8545-coe-3-datasheet
Виробник: Microchip Technology
Description: RECTIFIER
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SY89834UMG-TR sy89834u.pdf
SY89834UMG-TR
Виробник: Microchip Technology
Description: IC CLK BUFFER 2:4 1GHZ 16MLF
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad, 16-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 16-MLF® (3x3)
Part Status: Active
Frequency - Max: 1 GHz
на замовлення 801 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+780.27 грн
25+626.27 грн
100+569.55 грн
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SY100EP15VK4G sy100ep15v.pdf
SY100EP15VK4G
Виробник: Microchip Technology
Description: IC CLK BUFFER 2:4 2.5GHZ 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVECL, LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: HSTL, LVECL, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 5.5V
Ratio - Input:Output: 2:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TSSOP
Frequency - Max: 2.5 GHz
на замовлення 4243 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
92+241.29 грн
Мінімальне замовлення: 92
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SY89851UMG-TR sy89851u.pdf
SY89851UMG-TR
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:2 4GHZ 16MLF
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad, 16-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Translator
Input: CML, LVDS, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-MLF® (3x3)
Part Status: Active
Frequency - Max: 4 GHz
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+334.86 грн
25+269.62 грн
100+244.76 грн
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MASMCJ7.5Ae3 10561-msmc-datasheet
MASMCJ7.5Ae3
Виробник: Microchip Technology
Description: TVS DIODE 7.5VWM 12.9VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 116.3A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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PIC16LF723A-I/SO 40001417C.pdf
PIC16LF723A-I/SO
Виробник: Microchip Technology
Description: IC MCU 8BIT 7KB FLASH 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.19 грн
Мінімальне замовлення: 3
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PIC16LF723A-I/ML 40001417C.pdf
PIC16LF723A-I/ML
Виробник: Microchip Technology
Description: IC MCU 8BIT 7KB FLASH 28QFN
Packaging: Tube
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 445 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.14 грн
25+117.64 грн
100+105.80 грн
Мінімальне замовлення: 3
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PIC16LF723A-I/SS 40001417C.pdf
PIC16LF723A-I/SS
Виробник: Microchip Technology
Description: IC MCU 8BIT 7KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Verified
на замовлення 1686 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.81 грн
25+103.59 грн
100+93.96 грн
Мінімальне замовлення: 3
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MA5KP58CAe3 rf01010_rb.pdf
MA5KP58CAe3
Виробник: Microchip Technology
Description: TVS DIODE 58VWM 93.6VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MA5KP54CAe3 9461-m5kp-pdf
MA5KP54CAe3
Виробник: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MA5KP58CA 9461-m5kp-pdf
MA5KP58CA
Виробник: Microchip Technology
Description: TVS DIODE 58VWM 93.6VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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MA5KP6.0A 9461-m5kp-pdf
MA5KP6.0A
Виробник: Microchip Technology
Description: TVS DIODE 6VWM 10.3VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 485A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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MA5KP51CAe3 9461-m5kp-pdf
MA5KP51CAe3
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MA5KP54CA 9461-m5kp-pdf
MA5KP54CA
Виробник: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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24LC32AXT-E/ST 21713G.pdf
24LC32AXT-E/ST
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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24LC32AXT-I/ST 21713G.pdf
24LC32AXT-I/ST
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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24LC32AX-E/ST 21713G.pdf
24LC32AX-E/ST
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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24LC32AX-I/ST 21713G.pdf
24LC32AX-I/ST
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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MSC035SMA170S Microsemi_MSC035SMA170S_SiC_MOSFET_Datasheet_A.PDF
MSC035SMA170S
Виробник: Microchip Technology
Description: MOSFET SIC 1700V 35 MOHM TO-268
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ)
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3192.89 грн
25+2835.07 грн
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MSC080SMA120B MSC080SMA120B-SiC-MOSFET-Datasheet.pdf
MSC080SMA120B
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+983.61 грн
25+873.05 грн
100+713.23 грн
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MSC035SMA070B4 1244749-msc035sma070b4-datasheet
MSC035SMA070B4
Виробник: Microchip Technology
Description: TRANS SJT N-CH 700V 77A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ)
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1140.95 грн
25+1013.72 грн
100+881.26 грн
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MSC040SMA120B4 1244456-msc040sma120b4-datasheet
MSC040SMA120B4
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 66A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 323W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
на замовлення 136 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1352.36 грн
25+1200.95 грн
100+1045.15 грн
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MSC040SMA120S 1244005-msc040sma120s-datasheet
MSC040SMA120S
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 303W
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1947.04 грн
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MSC090SMA070S 1244481-msc090sma070s-datasheet
MSC090SMA070S
Виробник: Microchip Technology
Description: SICFET N-CH 700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Supplier Device Package: D3Pak
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
на замовлення 103 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+655.20 грн
25+581.55 грн
100+472.59 грн
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MSC090SMA070B MSC090SMA070B-SiC-MOSFET-Datasheet.pdf
MSC090SMA070B
Виробник: Microchip Technology
Description: SICFET N-CH 700V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Supplier Device Package: TO-247-3
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
на замовлення 127 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+404.26 грн
25+359.29 грн
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MSC050SDA070BCT 1244775-msc050sda070bct-datasheet
MSC050SDA070BCT
Виробник: Microchip Technology
Description: DIODE SIL CARB 700V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1624.28 грн
25+1442.20 грн
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MSC030SDA070BCT 1244773-msc030sda070bct-datasheet
MSC030SDA070BCT
Виробник: Microchip Technology
Description: SIC SBD 700 V 30 A TO-247
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
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MSC050SDA070S 1244193-msc050sda070s-datasheet
MSC050SDA070S
Виробник: Microchip Technology
Description: DIODE SIL CARBIDE 700V 88A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+923.09 грн
25+820.03 грн
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MSC030SDA070K 1243329-msc030sda070k-datasheet
MSC030SDA070K
Виробник: Microchip Technology
Description: DIODE SIL CARB 700V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+513.99 грн
25+455.98 грн
100+411.11 грн
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MSC030SDA070S 1244228-msc030sda070s-datasheet
MSC030SDA070S
Виробник: Microchip Technology
Description: DIODE SIL CARBIDE 700V 60A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+612.43 грн
25+544.96 грн
100+457.44 грн
В кошику  од. на суму  грн.
MSC035SMA070S 1244334-msc035sma070s-datasheet
MSC035SMA070S
Виробник: Microchip Technology
Description: MOSFET N-CH 700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 206W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1220.83 грн
25+1083.31 грн
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MSC035SMA070B MSC035SMA070B-SiC-MOSFET-Datasheet.pdf
MSC035SMA070B
Виробник: Microchip Technology
Description: MOSFET N-CH 700V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+809.32 грн
25+718.86 грн
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MSC030SDA070B 1243901-msc030sda070b-datasheet
MSC030SDA070B
Виробник: Microchip Technology
Description: DIODE SIL CARBIDE 700V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+542.23 грн
25+480.97 грн
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MSC080SMA120B4 MSC080SMA120B4-SiC-MOSFET-Datasheet.pdf
MSC080SMA120B4
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
на замовлення 94 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+709.26 грн
25+630.09 грн
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JANTX1N4989US 11059-sd44a-datasheet
JANTX1N4989US
Виробник: Microchip Technology
Description: DIODE ZENER 200V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 152 V
Qualification: MIL-PRF-19500/356
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PIC32MK1024MCF064T-I/MR PIC32MK_GP_MC_Familly_Datasheet_60001402G.pdf
PIC32MK1024MCF064T-I/MR
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
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PIC32MK1024MCF064T-I/MR PIC32MK_GP_MC_Familly_Datasheet_60001402G.pdf
PIC32MK1024MCF064T-I/MR
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
на замовлення 3890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+766.55 грн
25+676.12 грн
100+612.03 грн
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93C76CT-E/SN15KVAO 21796M.pdf
93C76CT-E/SN15KVAO
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
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93C76C-I/W15K 21796M.pdf
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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93C76C-I/S15K 21796M.pdf
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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93C76C/WF15K 21796M.pdf
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
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