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PIC32MZ2064DAA169-I/HF PIC32MZ2064DAA169-I/HF Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 328 шт:
термін постачання 21-31 дні (днів)
1+1539.69 грн
25+1358.74 грн
100+1229.71 грн
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PIC32MZ2064DAB169-I/HF PIC32MZ2064DAB169-I/HF Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I²S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 154 шт:
термін постачання 21-31 дні (днів)
1+1771.33 грн
25+1561.98 грн
100+1446.58 грн
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JANTX1N5553US/TR JANTX1N5553US/TR Microchip Technology Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JAN1N5553US/TR JAN1N5553US/TR Microchip Technology Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JAN1N5553/TR JAN1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANS1N5553US JANS1N5553US Microchip Technology Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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JANTXV1N5553/TR JANTXV1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 5A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANTX1N5553/TR JANTX1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 5A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANS1N5553/TR JANS1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 5A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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JANTXV1N5553US/TR JANTXV1N5553US/TR Microchip Technology Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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JANS1N5553 JANS1N5553 Microchip Technology Description: DIODE GEN PURP 800V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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JANTXV1N5553US JANTXV1N5553US Microchip Technology vleUsHb68.FCDqQHUe4L8QjGXawM1c89FiGabW6AFo8 Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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1N5553US/TR 1N5553US/TR Microchip Technology 10966-sa7-43-datasheet Description: STD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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1N5553/TR 1N5553/TR Microchip Technology 11519-lds-0230-datasheet Description: STD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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MSMBG100CA MSMBG100CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMBG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMBG100CAe3 MASMBG100CAe3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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MXLSMBG100A MXLSMBG100A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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MASMBG100CA MASMBG100CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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MSMBG100Ae3 MSMBG100Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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MXLSMBG100Ae3 MXLSMBG100Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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PD-9512GC/AC-AU Microchip Technology 1244404-pd-95xxgc-family-datasheet-sep23-2019 Description: 12-PORT BT 60W NMS AU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Current - Output: 1.1 A
Number of Ports: 12
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MA15KP28CA MA15KP28CA Microchip Technology rf01011_m15kp_rev_e.pdf Description: TVS DIODE 28VWM 47.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 316A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXSMBG28A MXSMBG28A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MXRT100KP58Ae3 MXRT100KP58Ae3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 58VWM 114VC CASE 5A
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MXSMBG100A MXSMBG100A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 100VWM 162VC SMBG
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CD978B CD978B Microchip Technology 8385-cd957b-cd986b-datasheet Description: VOLTAGE REGULATOR
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PIC32MZ1024EFK100-E/PF PIC32MZ1024EFK100-E/PF Microchip Technology PIC32MZ-Embedded-Connectivity-with-Floating-Point-Unit-Family-Data-Sheet-DS60001320H.pdf Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 102 шт:
термін постачання 21-31 дні (днів)
1+1071.31 грн
25+945.66 грн
100+856.21 грн
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JAN1N5188/TR JAN1N5188/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Qualification: MIL-PRF-19500/424
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JAN1N5187/TR JAN1N5187/TR Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: MIL-PRF-19500/424
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JANTX1N5187/TR JANTX1N5187/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: MIL-PRF-19500/424
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JANTXV1N5186/TR JANTXV1N5186/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: MIL-PRF-19500/424
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1N5189/TR 1N5189/TR Microchip Technology 11517-lds-0216-pdf.pdf Description: DIODE STANDARD 500V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
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1N5188/TR 1N5188/TR Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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JANTX1N5186/TR JANTX1N5186/TR Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: MIL-PRF-19500/424
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JANTXV1N5187/TR JANTXV1N5187/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: MIL-PRF-19500/424
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JAN1N5186/TR JAN1N5186/TR Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: MIL-PRF-19500/424
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JAN1N5189/TR JAN1N5189/TR Microchip Technology Description: DIODE STANDARD 500V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Qualification: MIL-PRF-19500/424
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1N5186/TR 1N5186/TR Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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JANTX1N5188/TR JANTX1N5188/TR Microchip Technology 11517-lds-0216-datasheet Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Qualification: MIL-PRF-19500/424
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1N5187/TR 1N5187/TR Microchip Technology LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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1N5188US/TR 1N5188US/TR Microchip Technology Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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1N5183E3 1N5183E3 Microchip Technology 1N3643-1N3647_1N4254-1N4257_1N5181-1N5184.pdf Description: DIODE STD 7500V 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 7500 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
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1N4896/TR 1N4896/TR Microchip Technology 10941-sa6-31-datasheet Description: DIODE ZENER 12.8V 400MW DO7
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 100°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4896A/TR 1N4896A/TR Microchip Technology 10941-sa6-31-datasheet Description: DIODE ZENER 12.8V 400MW DO7
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4901/TR 1N4901/TR Microchip Technology 10941-sa6-31-datasheet Description: DIODE ZENER TEMP COMPENSATED
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1N4901A/TR 1N4901A/TR Microchip Technology 10941-sa6-31-datasheet Description: DIODE ZENER TEMP COMPENSATED
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MXLSMCJ40CAe3 MXLSMCJ40CAe3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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MASMCJ40CAe3 MASMCJ40CAe3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MASMCJ40CA MASMCJ40CA Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXLSMCJ40CA MXLSMCJ40CA Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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VXA4-300-58M9824000 Microchip Technology Description: VXA4-300-58M9824000
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
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2304800-R 2304800-R Microchip Technology 00003916.pdf Description: ACK-I-SLIMSASX8-2OCULINKX4-0.8M
Packaging: Bulk
For Use With/Related Products: SmartRAID 3200 RAID Adapters
Accessory Type: Cable
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+5792.58 грн
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ATXMEGA32C4-CUR ATXMEGA32C4-CUR Microchip Technology Atmel-8493-8-and-32-bit-AVR-XMEGA-Microcontrollers-ATxmega16C4-ATxmega32C4_Datasheet.pdf Description: IC MCU 8/16BIT 32KB FLSH 49VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 16x12b
Core Size: 8/16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 3.6V
Connectivity: I2C, IrDA, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 49-VFBGA (5x5)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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MIC5252-2.85BM5TR MIC5252-2.85BM5TR Microchip Technology MCRLS01683-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR LO NOISE MICROCAP
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
Part Status: Active
PSRR: 63dB ~ 48dB (10Hz ~ 10kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 200 µA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
1664+13.97 грн
Мінімальне замовлення: 1664
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MIC5252-3.0BM5TR MIC5252-3.0BM5TR Microchip Technology MCRLS05664-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR LO NOISE MICROCAP
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 63dB ~ 48dB (10Hz ~ 10kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 200 µA
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)
1700+13.98 грн
Мінімальне замовлення: 1700
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MXSMCJLCE150Ae3 MXSMCJLCE150Ae3 Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 150VWM 243VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMBJ16CAe3 MXSMBJ16CAe3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MV-9300AE-6F-ENS25M0000000 Microchip Technology MV-9300A.pdf Description: MV-9300AE-6F-ENS25M0000000
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Type: VCXO
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 33mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Absolute Pull Range (APR): ±100ppm
Frequency: 25 MHz
Base Resonator: MEMS
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MX5KP54CA MX5KP54CA Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 54VWM 87.1VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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MX5KP9.0CAe3 MX5KP9.0CAe3 Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 9VWM 15.4VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 325A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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PIC32MZ2064DAA169-I/HF PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
PIC32MZ2064DAA169-I/HF
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 328 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1539.69 грн
25+1358.74 грн
100+1229.71 грн
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PIC32MZ2064DAB169-I/HF PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
PIC32MZ2064DAB169-I/HF
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I²S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 154 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1771.33 грн
25+1561.98 грн
100+1446.58 грн
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JANTX1N5553US/TR
JANTX1N5553US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JAN1N5553US/TR
JAN1N5553US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JAN1N5553/TR 11519-lds-0230-datasheet
JAN1N5553/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANS1N5553US
JANS1N5553US
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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JANTXV1N5553/TR 11519-lds-0230-datasheet
JANTXV1N5553/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 5A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANTX1N5553/TR 11519-lds-0230-datasheet
JANTX1N5553/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 5A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANS1N5553/TR 11519-lds-0230-datasheet
JANS1N5553/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 5A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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JANTXV1N5553US/TR
JANTXV1N5553US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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JANS1N5553
JANS1N5553
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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JANTXV1N5553US vleUsHb68.FCDqQHUe4L8QjGXawM1c89FiGabW6AFo8
JANTXV1N5553US
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
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1N5553US/TR 10966-sa7-43-datasheet
1N5553US/TR
Виробник: Microchip Technology
Description: STD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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1N5553/TR 11519-lds-0230-datasheet
1N5553/TR
Виробник: Microchip Technology
Description: STD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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MSMBG100CA 10560-msmb-datasheet
MSMBG100CA
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMBG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMBG100CAe3 10560-msmb-datasheet
MASMBG100CAe3
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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MXLSMBG100A 10560-msmb-datasheet
MXLSMBG100A
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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MASMBG100CA 10560-msmb-datasheet
MASMBG100CA
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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MSMBG100Ae3 10560-msmb-datasheet
MSMBG100Ae3
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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MXLSMBG100Ae3 10560-msmb-datasheet
MXLSMBG100Ae3
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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PD-9512GC/AC-AU 1244404-pd-95xxgc-family-datasheet-sep23-2019
Виробник: Microchip Technology
Description: 12-PORT BT 60W NMS AU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Current - Output: 1.1 A
Number of Ports: 12
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MA15KP28CA rf01011_m15kp_rev_e.pdf
MA15KP28CA
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 47.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 316A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXSMBG28A 10560-msmb-datasheet
MXSMBG28A
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MXRT100KP58Ae3 77294-mrt100kp-pdf
MXRT100KP58Ae3
Виробник: Microchip Technology
Description: TVS DIODE 58VWM 114VC CASE 5A
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MXSMBG100A 10560-msmb-datasheet
MXSMBG100A
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
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CD978B 8385-cd957b-cd986b-datasheet
CD978B
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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PIC32MZ1024EFK100-E/PF PIC32MZ-Embedded-Connectivity-with-Floating-Point-Unit-Family-Data-Sheet-DS60001320H.pdf
PIC32MZ1024EFK100-E/PF
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 102 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1071.31 грн
25+945.66 грн
100+856.21 грн
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JAN1N5188/TR 11517-lds-0216-datasheet
JAN1N5188/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Qualification: MIL-PRF-19500/424
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JAN1N5187/TR LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
JAN1N5187/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: MIL-PRF-19500/424
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JANTX1N5187/TR 11517-lds-0216-datasheet
JANTX1N5187/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: MIL-PRF-19500/424
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JANTXV1N5186/TR 11517-lds-0216-datasheet
JANTXV1N5186/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: MIL-PRF-19500/424
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1N5189/TR 11517-lds-0216-pdf.pdf
1N5189/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 500V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
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1N5188/TR LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5188/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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JANTX1N5186/TR LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
JANTX1N5186/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: MIL-PRF-19500/424
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JANTXV1N5187/TR 11517-lds-0216-datasheet
JANTXV1N5187/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: MIL-PRF-19500/424
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JAN1N5186/TR LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
JAN1N5186/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: MIL-PRF-19500/424
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JAN1N5189/TR
JAN1N5189/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 500V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Qualification: MIL-PRF-19500/424
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1N5186/TR LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5186/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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JANTX1N5188/TR 11517-lds-0216-datasheet
JANTX1N5188/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Qualification: MIL-PRF-19500/424
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1N5187/TR LDS-0216%2C+1N5186_1N5188_1N5190%2C+MIL-PRF-19500-424.pdf
1N5187/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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1N5188US/TR
1N5188US/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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1N5183E3 1N3643-1N3647_1N4254-1N4257_1N5181-1N5184.pdf
1N5183E3
Виробник: Microchip Technology
Description: DIODE STD 7500V 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 7500 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
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1N4896/TR 10941-sa6-31-datasheet
1N4896/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12.8V 400MW DO7
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 100°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4896A/TR 10941-sa6-31-datasheet
1N4896A/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12.8V 400MW DO7
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4901/TR 10941-sa6-31-datasheet
1N4901/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
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1N4901A/TR 10941-sa6-31-datasheet
1N4901A/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
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MXLSMCJ40CAe3 10561-msmc-datasheet
MXLSMCJ40CAe3
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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MASMCJ40CAe3 10561-msmc-datasheet
MASMCJ40CAe3
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MASMCJ40CA 10561-msmc-datasheet
MASMCJ40CA
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXLSMCJ40CA 10561-msmc-datasheet
MXLSMCJ40CA
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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VXA4-300-58M9824000
Виробник: Microchip Technology
Description: VXA4-300-58M9824000
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
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2304800-R 00003916.pdf
2304800-R
Виробник: Microchip Technology
Description: ACK-I-SLIMSASX8-2OCULINKX4-0.8M
Packaging: Bulk
For Use With/Related Products: SmartRAID 3200 RAID Adapters
Accessory Type: Cable
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5792.58 грн
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ATXMEGA32C4-CUR Atmel-8493-8-and-32-bit-AVR-XMEGA-Microcontrollers-ATxmega16C4-ATxmega32C4_Datasheet.pdf
ATXMEGA32C4-CUR
Виробник: Microchip Technology
Description: IC MCU 8/16BIT 32KB FLSH 49VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 16x12b
Core Size: 8/16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 3.6V
Connectivity: I2C, IrDA, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 49-VFBGA (5x5)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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MIC5252-2.85BM5TR MCRLS01683-1.pdf?t.download=true&u=5oefqw
MIC5252-2.85BM5TR
Виробник: Microchip Technology
Description: IC REG LINEAR LO NOISE MICROCAP
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
Part Status: Active
PSRR: 63dB ~ 48dB (10Hz ~ 10kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 200 µA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1664+13.97 грн
Мінімальне замовлення: 1664
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MIC5252-3.0BM5TR MCRLS05664-1.pdf?t.download=true&u=5oefqw
MIC5252-3.0BM5TR
Виробник: Microchip Technology
Description: IC REG LINEAR LO NOISE MICROCAP
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 63dB ~ 48dB (10Hz ~ 10kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 200 µA
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1700+13.98 грн
Мінімальне замовлення: 1700
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MXSMCJLCE150Ae3 10562-msmclce-datasheet
MXSMCJLCE150Ae3
Виробник: Microchip Technology
Description: TVS DIODE 150VWM 243VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMBJ16CAe3 10560-msmb-datasheet
MXSMBJ16CAe3
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MV-9300AE-6F-ENS25M0000000 MV-9300A.pdf
Виробник: Microchip Technology
Description: MV-9300AE-6F-ENS25M0000000
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Type: VCXO
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 33mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Absolute Pull Range (APR): ±100ppm
Frequency: 25 MHz
Base Resonator: MEMS
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MX5KP54CA 9461-m5kp-pdf
MX5KP54CA
Виробник: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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MX5KP9.0CAe3 9461-m5kp-pdf
MX5KP9.0CAe3
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.4VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 325A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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