Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (343136) > Сторінка 1496 з 5719
| Фото | Назва | Виробник | Інформація |
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-2.50-mm-x-2.00-mm.jpg "DSC1001DI5-060.0000T") |
DSC1001DI5-060.0000T | Microchip Technology |
 Description: MEMS OSC XO 60.0000MHZ CMOS SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
| DSC1001AI5-066.0000T | Microchip Technology |
Description: MEMS OSC XO 66.0000MHZ CMOS SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||
3,2x2,5x0,9.jpg "DSC1001AI5-060.0000T") |
DSC1001AI5-060.0000T | Microchip Technology |
Description: OSC MEMS AUTO -40C-85C SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
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GMP4235-GM1 | Microchip Technology |
Description: SI PIN NON HERMETIC PLASTIC SMT Packaging: Bulk Package / Case: 0805 (2012 Metric) Diode Type: PIN - Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz Resistance @ If, F: 800mOhm @ 20mA, 100MHz Voltage - Peak Reverse (Max): 250V Supplier Device Package: 0805 Part Status: Active |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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| 93LC46C-I/WF15K | Microchip Technology |
Description: IC EEPROM 1KBIT MICROWIRE DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: Die Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 128 x 8, 64 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||
| 93LC46C/WF15K | Microchip Technology |
Description: IC EEPROM 1KBIT MICROWIRE DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: Die Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 128 x 8, 64 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MXLPLAD36KP40CA | Microchip Technology |
Description: TVS DIODE 40VWM 64.5VC PLAD |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MXLPLAD36KP40CAE3 | Microchip Technology |
Description: TVS DIODE 40VWM 64.5VC PLAD |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MAPLAD18KP40CA | Microchip Technology |
Description: TVS DIODE 40VWM 64.5VC PLAD |
товару немає в наявності |
В кошику од. на суму грн. | |||
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JANTX1N4472 | Microchip Technology |
Description: DIODE ZENER 20V 1.5W DO204AL |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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JANTX1N6119A | Microchip Technology |
Description: TVS DIODE 27.4VWM 49.9VC AXIAL |
товару немає в наявності |
В кошику од. на суму грн. | ||
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AT24C01A-10TU-2.7-T | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
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AT24C01-10SC-2.5 | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 10ms Memory Interface: I²C Access Time: 900 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
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AT24C01-10SI | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 10ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||
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AT24C01A-10PI | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-PDIP Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||
| 93LC66C/S15K | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: Die Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 512 x 8, 256 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||
| 93LC66C-I/WF15K | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: Die Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 512 x 8, 256 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||
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93LC66C-E/SN15KVAO | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 512 x 8, 256 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||
| JAN2N5153L | Microchip Technology |
Description: TRANS PNP 80V 2A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | |||
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JANSR2N5153 | Microchip Technology |
Description: TRANS PNP 80V 2A TO39 Packaging: Tray Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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2N5153 | Microchip Technology |
Description: TRANS PNP 80V 2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANTX2N5153L | Microchip Technology |
Description: TRANS PNP 80V 2A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANSR2N5153U3 | Microchip Technology |
Description: TRANS PNP 80V 2A U3 Packaging: Tray Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: U3 Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
| JAN2N5153 | Microchip Technology |
Description: TRANS PNP 80V 2A TO-39 |
товару немає в наявності |
В кошику од. на суму грн. | |||
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JAN2N5153U3 | Microchip Technology |
Description: TRANS PNP 80V 2A U3 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: U3 Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.16 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
| JANKCCR2N5153 | Microchip Technology | Description: TRANSISTOR RH POWER BJT |
товару немає в наявності |
В кошику од. на суму грн. | |||
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JANTX2N5153U3 | Microchip Technology |
Description: TRANS PNP 80V 2A U3 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: U3 Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.16 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANHCC2N5153 | Microchip Technology |
Description: TRANS PNP 80V 2A TO39 Packaging: Tape & Reel (TR) Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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Jantxv2N5153 | Microchip Technology |
Description: TRANS PNP 80V 2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANS2N5153L | Microchip Technology |
Description: TRANS PNP 80V 2A TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-5AA Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANS2N5153U3 | Microchip Technology |
Description: TRANS PNP 80V 2A U3 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: U3 Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.16 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANKCC2N5153 | Microchip Technology |
Description: TRANS PNP 80V 2A TO39 Packaging: Tape & Reel (TR) Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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2N5153L | Microchip Technology |
Description: TRANS PNP 80V 2A TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-5AA Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||
| JANKCCF2N5153 | Microchip Technology | Description: TRANSISTOR RH POWER BJT |
товару немає в наявності |
В кошику од. на суму грн. | |||
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JANS2N5153 | Microchip Technology |
Description: TRANS PNP 80V 2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANSF2N5153L | Microchip Technology |
Description: TRANS PNP 80V 2A TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-5AA Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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2N5153U3 | Microchip Technology |
Description: TRANS PNP 80V 2A U3 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: U3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.16 W |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANTXV2N5153U3/TR | Microchip Technology |
Description: TRANS PNP 80V 2A U3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: U3 Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.16 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANSF2N5153U3 | Microchip Technology |
Description: TRANS PNP 80V 2A U3 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: U3 Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.16 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANSF2N5153 | Microchip Technology |
Description: TRANS PNP 80V 2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W Qualification: MIL-PRF-19500/545 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANTXV1N3595US | Microchip Technology |
Description: DIODE STANDARD 125V 4A B SQMELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Grade: Military Qualification: MIL-PRF-19500/241 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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MXRT100KP110Ae3 | Microchip Technology |
Description: TVS DIODE 110VWM 216VC CASE 5A |
товару немає в наявності |
В кошику од. на суму грн. | ||
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MXL15KP130Ae3 | Microchip Technology |
Description: TVS DIODE 130VWM 209VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 72A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
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В кошику од. на суму грн. | ||
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JANHCA1N5291 | Microchip Technology |
Description: DIODE CUR REG 100V 616UA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 616µA Voltage - Limiting (Max): 1.1V Grade: Military Qualification: MIL-PRF-19500/463 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANKCA1N5293 | Microchip Technology | Description: CURRENT REGULATOR |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANHCA1N5298 | Microchip Technology |
Description: DIODE CUR REG 100V 1.21MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.21mA Voltage - Limiting (Max): 1.4V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANKCA1N5292 | Microchip Technology | Description: CURRENT REGULATOR |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JAN1N5294-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 825UA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 825µA Voltage - Limiting (Max): 1.2V Grade: Military Qualification: MIL-PRF-19500/463 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JAN1N5299-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 1.32MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.32mA Voltage - Limiting (Max): 1.45V Grade: Military Qualification: MIL-PRF-19500/463 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANTX1N5290-1/TR | Microchip Technology | Description: CURRENT REGULATOR |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANTXV1N5295-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 902UA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 902µA Voltage - Limiting (Max): 1.25V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANTX1N5291-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 616UA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 616µA Voltage - Limiting (Max): 1.1V Grade: Military Qualification: MIL-PRF-19500/463 |
товару немає в наявності |
В кошику од. на суму грн. | ||
 |
JANTX1N5293-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 748UA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 748µA Voltage - Limiting (Max): 1.15V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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JANTXV1N6116A | Microchip Technology |
Description: TVS DIODE 20.6VWM 37.4VC AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13.4A Voltage - Reverse Standoff (Typ): 20.6V Supplier Device Package: B, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.4V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
| DSC1122CI5-433.9200 | Microchip Technology |
Description: MEMS OSC XO 433.9200MHZ LVPECL |
товару немає в наявності |
В кошику од. на суму грн. | |||
| 1N5263BUR-1 | Microchip Technology |
Description: DIODE ZENER |
товару немає в наявності |
В кошику од. на суму грн. | |||
 |
1N5263B/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
товару немає в наявності |
В кошику од. на суму грн. | ||
| 93LC86C-I/S15K | Microchip Technology |
Description: IC EEPROM 16KBIT MICROWIRE DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: Die Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 2K x 8, 1K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||
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93LC86C-E/SN15KVAO | Microchip Technology |
Description: IC EEPROM 16KBIT MICROWIRE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 2K x 8, 1K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||
 |
93LC86CT-I/SN15KVAO | Microchip Technology |
Description: IC EEPROM 16KBIT MICROWIRE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 2K x 8, 1K x 16 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. |
| DSC1001DI5-060.0000T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 60.0000MHZ CMOS SMD
Description: MEMS OSC XO 60.0000MHZ CMOS SMD
товару немає в наявності
В кошику
од. на суму грн.
| DSC1001AI5-066.0000T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 66.0000MHZ CMOS SMD
Description: MEMS OSC XO 66.0000MHZ CMOS SMD
товару немає в наявності
В кошику
од. на суму грн.
| DSC1001AI5-060.0000T |
|
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-85C SMD
Description: OSC MEMS AUTO -40C-85C SMD
товару немає в наявності
В кошику
од. на суму грн.
| GMP4235-GM1 |
|
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC PLASTIC SMT
Packaging: Bulk
Package / Case: 0805 (2012 Metric)
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 800mOhm @ 20mA, 100MHz
Voltage - Peak Reverse (Max): 250V
Supplier Device Package: 0805
Part Status: Active
Description: SI PIN NON HERMETIC PLASTIC SMT
Packaging: Bulk
Package / Case: 0805 (2012 Metric)
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 800mOhm @ 20mA, 100MHz
Voltage - Peak Reverse (Max): 250V
Supplier Device Package: 0805
Part Status: Active
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 233.57 грн |
| 93LC46C-I/WF15K |
|
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT MICROWIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MICROWIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| 93LC46C/WF15K |
|
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT MICROWIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MICROWIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| MXLPLAD36KP40CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC PLAD
Description: TVS DIODE 40VWM 64.5VC PLAD
товару немає в наявності
В кошику
од. на суму грн.
| MXLPLAD36KP40CAE3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC PLAD
Description: TVS DIODE 40VWM 64.5VC PLAD
товару немає в наявності
В кошику
од. на суму грн.
| MAPLAD18KP40CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC PLAD
Description: TVS DIODE 40VWM 64.5VC PLAD
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N4472 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 20V 1.5W DO204AL
Description: DIODE ZENER 20V 1.5W DO204AL
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 869.29 грн |
| JANTX1N6119A |
|
Виробник: Microchip Technology
Description: TVS DIODE 27.4VWM 49.9VC AXIAL
Description: TVS DIODE 27.4VWM 49.9VC AXIAL
товару немає в наявності
В кошику
од. на суму грн.
| AT24C01A-10TU-2.7-T |
|
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| AT24C01-10SC-2.5 |
|
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| AT24C01-10SI |
|
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| AT24C01A-10PI |
|
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| 93LC66C/S15K |
|
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: Die
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: Die
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| 93LC66C-I/WF15K |
|
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: Die
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: Die
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| 93LC66C-E/SN15KVAO |
|
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N5153L |
|
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
товару немає в наявності
В кошику
од. на суму грн.
| JANSR2N5153 |
|
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Tray
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A TO39
Packaging: Tray
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
товару немає в наявності
В кошику
од. на суму грн.
| 2N5153 |
|
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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| JANTX2N5153L |
|
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
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В кошику
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| JANSR2N5153U3 |
|
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A U3
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Qualification: MIL-PRF-19500/545
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В кошику
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| JAN2N5153 |
|
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO-39
Description: TRANS PNP 80V 2A TO-39
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| JAN2N5153U3 |
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Qualification: MIL-PRF-19500/545
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В кошику
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| JANKCCR2N5153 |
Виробник: Microchip Technology
Description: TRANSISTOR RH POWER BJT
Description: TRANSISTOR RH POWER BJT
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В кошику
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| JANTX2N5153U3 |
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Qualification: MIL-PRF-19500/545
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В кошику
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| JANHCC2N5153 |
|
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
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В кошику
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| Jantxv2N5153 |
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
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В кошику
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| JANS2N5153L |
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
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В кошику
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| JANS2N5153U3 |
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Qualification: MIL-PRF-19500/545
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В кошику
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| JANKCC2N5153 |
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
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В кошику
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| 2N5153L |
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS PNP 80V 2A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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В кошику
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| JANKCCF2N5153 |
Виробник: Microchip Technology
Description: TRANSISTOR RH POWER BJT
Description: TRANSISTOR RH POWER BJT
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В кошику
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| JANS2N5153 |
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
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В кошику
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| JANSF2N5153L |
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
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В кошику
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| 2N5153U3 |
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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В кошику
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| JANTXV2N5153U3/TR |
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A U3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Qualification: MIL-PRF-19500/545
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| JANSF2N5153U3 |
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Qualification: MIL-PRF-19500/545
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| JANSF2N5153 |
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
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| JANTXV1N3595US |
Виробник: Microchip Technology
Description: DIODE STANDARD 125V 4A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE STANDARD 125V 4A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Grade: Military
Qualification: MIL-PRF-19500/241
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| MXRT100KP110Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 216VC CASE 5A
Description: TVS DIODE 110VWM 216VC CASE 5A
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| MXL15KP130Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 130VWM 209VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
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| JANHCA1N5291 |
|
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 616UA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 616µA
Voltage - Limiting (Max): 1.1V
Grade: Military
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 616UA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 616µA
Voltage - Limiting (Max): 1.1V
Grade: Military
Qualification: MIL-PRF-19500/463
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| JANKCA1N5293 |
Виробник: Microchip Technology
Description: CURRENT REGULATOR
Description: CURRENT REGULATOR
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| JANHCA1N5298 |
|
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.21MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.21mA
Voltage - Limiting (Max): 1.4V
Description: DIODE CUR REG 100V 1.21MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.21mA
Voltage - Limiting (Max): 1.4V
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| JANKCA1N5292 |
Виробник: Microchip Technology
Description: CURRENT REGULATOR
Description: CURRENT REGULATOR
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| JAN1N5294-1/TR |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 825UA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 825µA
Voltage - Limiting (Max): 1.2V
Grade: Military
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 825UA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 825µA
Voltage - Limiting (Max): 1.2V
Grade: Military
Qualification: MIL-PRF-19500/463
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| JAN1N5299-1/TR |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.32MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.32mA
Voltage - Limiting (Max): 1.45V
Grade: Military
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 1.32MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.32mA
Voltage - Limiting (Max): 1.45V
Grade: Military
Qualification: MIL-PRF-19500/463
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| JANTX1N5290-1/TR |
Виробник: Microchip Technology
Description: CURRENT REGULATOR
Description: CURRENT REGULATOR
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| JANTXV1N5295-1/TR |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 902UA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 902µA
Voltage - Limiting (Max): 1.25V
Description: DIODE CUR REG 100V 902UA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 902µA
Voltage - Limiting (Max): 1.25V
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| JANTX1N5291-1/TR |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 616UA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 616µA
Voltage - Limiting (Max): 1.1V
Grade: Military
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 616UA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 616µA
Voltage - Limiting (Max): 1.1V
Grade: Military
Qualification: MIL-PRF-19500/463
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| JANTX1N5293-1/TR |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 748UA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 748µA
Voltage - Limiting (Max): 1.15V
Description: DIODE CUR REG 100V 748UA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 748µA
Voltage - Limiting (Max): 1.15V
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| JANTXV1N6116A |
|
Виробник: Microchip Technology
Description: TVS DIODE 20.6VWM 37.4VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.4A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 20.6VWM 37.4VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.4A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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| DSC1122CI5-433.9200 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 433.9200MHZ LVPECL
Description: MEMS OSC XO 433.9200MHZ LVPECL
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| 1N5263BUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Description: DIODE ZENER
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| 1N5263B/TR |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Description: VOLTAGE REGULATOR
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| 93LC86C-I/S15K |
|
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT MICROWIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT MICROWIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
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| 93LC86C-E/SN15KVAO |
|
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
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| 93LC86CT-I/SN15KVAO |
|
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 16KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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