Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (283415) > Сторінка 1507 з 4724
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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24CS512-E/MS | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8MSOPDigiKey Programmable: Not Verified Memory Organization: 64K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-MSOP Memory Format: EEPROM Clock Frequency: 3.4 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tube |
на замовлення 198 шт: термін постачання 21-31 дні (днів) |
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24CS512-I/MS | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8MSOPDigiKey Programmable: Not Verified Memory Organization: 64K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-MSOP Memory Format: EEPROM Clock Frequency: 3.4 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tube |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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DRF1400-CLASS-D | Microchip Technology |
Description: RF MOSFET (VDMOS) PUSH-PULL 13.5Secondary Attributes: On-Board LEDs Part Status: Active Embedded: No Supplied Contents: Board(s) Utilized IC / Part: DRF1400 Type: Power Management Function: RF Generator Packaging: Bulk |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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JAN1N4148-1/TR | Microchip Technology |
Description: DIODE GEN PURP 75V 200MA DO213AA |
товару немає в наявності |
Мінімальне замовлення: 962 шт В кошику од. на суму грн. | ||||||
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CD5333B | Microchip Technology |
Description: DIODE ZENER 3.3V 5W DIECurrent - Reverse Leakage @ Vr: 300 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Power - Max: 5 W Part Status: Active Supplier Device Package: Die Impedance (Max) (Zzt): 3 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -65°C ~ 200°C Mounting Type: Surface Mount Package / Case: Die Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 167 шт В кошику од. на суму грн. | ||||||
| RN42N-I/RMCOS477 | Microchip Technology |
Description: MODULE Part Status: Obsolete Serial Interfaces: SPI, UART RF Family/Standard: Bluetooth Antenna Type: Antenna Not Included Protocol: Bluetooth v2.1 + EDR, Class 2 Data Rate: 3Mbps Power - Output: 4dBm Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -86dBm Package / Case: 35-SMD Module Packaging: Bulk DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| RN42-I/RMCOS477 | Microchip Technology |
Description: MODULE Part Status: Obsolete Serial Interfaces: SPI, UART RF Family/Standard: Bluetooth Antenna Type: PCB Trace DigiKey Programmable: Not Verified Protocol: Bluetooth v2.1 + EDR, Class 2 Data Rate: 3Mbps Power - Output: 4dBm Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -86dBm Package / Case: 35-SMD Module Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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JANS2N3868S | Microchip Technology |
Description: TRANS PNP 60V 0.003A TO39 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 3 mA Supplier Device Package: TO-39 (TO-205AD) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Current - Collector Cutoff (Max): 100µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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MXRT100KP85CA/TR | Microchip Technology | Description: TVS DIODE 85VWM 166VC CASE 5A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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MXLRT100KP48A/TR | Microchip Technology |
Description: TVS DIODE 48VWM 94.3VC CASE 5A Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AR, Axial Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 100000W (100kW) Voltage - Clamping (Max) @ Ipp: 94.3V Voltage - Breakdown (Min): 53.3V Unidirectional Channels: 1 Supplier Device Package: Case 5A (DO-204AR) Voltage - Reverse Standoff (Typ): 48V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MRT100KP250A | Microchip Technology |
Description: TVS DIODE 250VWM 493VC CASE 5AQualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 100000W (100kW) Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AR, Axial Packaging: Bulk Voltage - Clamping (Max) @ Ipp: 493V Voltage - Breakdown (Min): 278V Unidirectional Channels: 1 Supplier Device Package: Case 5A (DO-204AR) Voltage - Reverse Standoff (Typ): 250V Applications: General Purpose |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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MRT100KP48AE3 | Microchip Technology |
Description: TVS DIODE 48VWM 94.3VC CASE 5AApplications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AR, Axial Packaging: Bulk Qualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 100000W (100kW) Voltage - Clamping (Max) @ Ipp: 94.3V Voltage - Breakdown (Min): 53.3V Unidirectional Channels: 1 Supplier Device Package: Case 5A (DO-204AR) Voltage - Reverse Standoff (Typ): 48V |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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MXLRT100KP40CA | Microchip Technology |
Description: TVS DIODE 40VWM 78.6VC CASE 5AApplications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AR, Axial Packaging: Bulk Part Status: Active Power Line Protection: No Power - Peak Pulse: 100000W (100kW) Voltage - Clamping (Max) @ Ipp: 78.6V Voltage - Breakdown (Min): 44.4V Bidirectional Channels: 1 Supplier Device Package: Case 5A (DO-204AR) Voltage - Reverse Standoff (Typ): 40V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXRT100KP350Ae3 | Microchip Technology |
Description: TVS DIODE 350VWM 690VC CASE 5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXRT100KP78CA | Microchip Technology |
Description: TVS DIODE 78VWM 153VC CASE 5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXRT100KP220A/TR | Microchip Technology | Description: TVS DIODE 220VWM 434VC CASE 5A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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MXRT100KP60A/TR | Microchip Technology | Description: TVS DIODE 60VWM 118VC CASE 5A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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MRT100KP51A | Microchip Technology |
Description: TVS DIODE 51VWM 101VC CASE 5AQualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 100000W (100kW) Voltage - Clamping (Max) @ Ipp: 101V Voltage - Breakdown (Min): 56.7V Unidirectional Channels: 1 Supplier Device Package: Case 5A (DO-204AR) Voltage - Reverse Standoff (Typ): 51V Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AR, Axial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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ZL40205LDF1 | Microchip Technology |
Description: IC CLK BUFFER 1:6 750MHZ 32QFNOutput: LVPECL Mounting Type: Surface Mount Number of Circuits: 1 Package / Case: 32-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Frequency - Max: 750 MHz Part Status: Active Supplier Device Package: 32-QFN (5x5) Differential - Input:Output: Yes/Yes Ratio - Input:Output: 1:6 Voltage - Supply: 2.375V ~ 3.465V Operating Temperature: -40°C ~ 85°C Input: CML, HCSL, LVCMOS, LVDS, LVPECL Type: Fanout Buffer (Distribution) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||
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ZL40205LDF1 | Microchip Technology |
Description: IC CLK BUFFER 1:6 750MHZ 32QFNFrequency - Max: 750 MHz Part Status: Active Supplier Device Package: 32-QFN (5x5) Differential - Input:Output: Yes/Yes Ratio - Input:Output: 1:6 Voltage - Supply: 2.375V ~ 3.465V Operating Temperature: -40°C ~ 85°C Input: CML, HCSL, LVCMOS, LVDS, LVPECL Type: Fanout Buffer (Distribution) Output: LVPECL Mounting Type: Surface Mount Number of Circuits: 1 Package / Case: 32-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3981 шт: термін постачання 21-31 дні (днів) |
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MSCDC450A120AG | Microchip Technology |
Description: PM-DIODE-SIC-SBD-SP6C |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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MSCDC450A70AG | Microchip Technology |
Description: PM-DIODE-SIC-SBD-SP6C |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| DSC6111HI1B-013.5600T | Microchip Technology |
Description: MEMS CMOS OSC SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| CDLL4962 | Microchip Technology |
Description: VOLTAGE REGULATOR Part Status: Active Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||
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BZV55C11/TR | Microchip Technology |
Description: DIODE ZENER 11V DO213AACurrent - Reverse Leakage @ Vr: 100 nA @ 8 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Part Status: Active Supplier Device Package: DO-213AA Impedance (Max) (Zzt): 20 Ohms Voltage - Zener (Nom) (Vz): 11 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-213AA Tolerance: ±5.45% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 304 шт В кошику од. на суму грн. | ||||||
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MSMLJ60A | Microchip Technology |
Description: TVS DIODE 60VWM 96.8VC DO214ABQualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 3000W (3kW) Voltage - Clamping (Max) @ Ipp: 96.8V Voltage - Breakdown (Min): 66.7V Unidirectional Channels: 1 Supplier Device Package: DO-214AB Voltage - Reverse Standoff (Typ): 60V Current - Peak Pulse (10/1000µs): 31A Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||
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MA5KP24Ae3 | Microchip Technology |
Description: TVS DIODE 24VWM 38.9VC DO204ARPackaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 128A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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MA5KP22CA | Microchip Technology |
Description: TVS DIODE 22VWM 35.5VC DO204ARPackaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 141A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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MA5KP22CAe3 | Microchip Technology |
Description: TVS DIODE 22VWM 35.5VC DO204ARPackaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 141A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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MA5KP26CA | Microchip Technology |
Description: TVS DIODE 26VWM 42.1VC DO204ARPackaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 119A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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MA5KP24A | Microchip Technology |
Description: TVS DIODE 24VWM 38.9VC DO204ARPackaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 128A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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JANKCBM2N2221A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: TO-18 (TO-206AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANSF2N2221AUBC/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: UBC DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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JANKCBD2N2221A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: TO-18 (TO-206AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANSL2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 650 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: UA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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JANSM2N2221AUA/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 650 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: UA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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JANSP2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 650 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: UA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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JANS2N2221UB | Microchip Technology |
Description: SMALL-SIGNAL BJT Voltage - Collector Emitter Breakdown (Max): 30 V Supplier Device Package: UB Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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JANSD2N2221AUB/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Tape & Reel (TR) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: UB |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
| JANS2N2221UA/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||
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JANSP2N2221AUB | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: UB DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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JANSR2N2221AUB/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Supplier Device Package: UB DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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JANTXV2N2221AUB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Supplier Device Package: UB DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 115 шт В кошику од. на суму грн. | ||||||
| JANSD2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Part Status: Active Supplier Device Package: UA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk Power - Max: 650 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||
|
|
JANSF2N2221A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Supplier Device Package: TO-18 (TO-206AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
|
JANTXV2N2221AUA/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Power - Max: 650 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: UA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
|
JANS2N2221AUB/TR | Microchip Technology |
Description: TRANS NPN 50V 0.8A UB Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: UB DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Tape & Reel (TR) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Qualification: MIL-PRF-19500/255 Grade: Military |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
| JANSF2N2221AUBC | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||
| JANSG2N2221AUBC/TR | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||
|
JANSF2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 650 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: UA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
|
|
JANSR2N2221A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: TO-18 (TO-206AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
|
JANSP2N2221AUBC | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: UBC DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
|
JANSR2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Part Status: Active Supplier Device Package: UA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk Power - Max: 650 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
| JANSR2N2221AUA/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 650 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: UA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||
|
JANSL2N2221AUB | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: UB DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
|
|
JANSF2N2221AL | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: TO-18 (TO-206AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
|
|
JANKCBR2N2221A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: TO-18 (TO-206AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANSD2N2221AUBC/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: UBC DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
|
JANTX2N2221AUB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: UB DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
|
24FC01T-I/MUY | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFNPackaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| 24CS512-E/MS |
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Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
Description: IC EEPROM 512KBIT I2C 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.60 грн |
| 25+ | 98.40 грн |
| 100+ | 95.40 грн |
| 24CS512-I/MS |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
Description: IC EEPROM 512KBIT I2C 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.48 грн |
| 25+ | 93.92 грн |
| 100+ | 89.40 грн |
| DRF1400-CLASS-D |
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Виробник: Microchip Technology
Description: RF MOSFET (VDMOS) PUSH-PULL 13.5
Secondary Attributes: On-Board LEDs
Part Status: Active
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: DRF1400
Type: Power Management
Function: RF Generator
Packaging: Bulk
Description: RF MOSFET (VDMOS) PUSH-PULL 13.5
Secondary Attributes: On-Board LEDs
Part Status: Active
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: DRF1400
Type: Power Management
Function: RF Generator
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 351051.60 грн |
| JAN1N4148-1/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO213AA
Description: DIODE GEN PURP 75V 200MA DO213AA
товару немає в наявності
Мінімальне замовлення: 962 шт
В кошику
од. на суму грн.
| CD5333B |
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Виробник: Microchip Technology
Description: DIODE ZENER 3.3V 5W DIE
Current - Reverse Leakage @ Vr: 300 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Active
Supplier Device Package: Die
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: Die
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 3.3V 5W DIE
Current - Reverse Leakage @ Vr: 300 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Active
Supplier Device Package: Die
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: Die
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 167 шт
В кошику
од. на суму грн.
| RN42N-I/RMCOS477 |
Виробник: Microchip Technology
Description: MODULE
Part Status: Obsolete
Serial Interfaces: SPI, UART
RF Family/Standard: Bluetooth
Antenna Type: Antenna Not Included
Protocol: Bluetooth v2.1 + EDR, Class 2
Data Rate: 3Mbps
Power - Output: 4dBm
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -86dBm
Package / Case: 35-SMD Module
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: MODULE
Part Status: Obsolete
Serial Interfaces: SPI, UART
RF Family/Standard: Bluetooth
Antenna Type: Antenna Not Included
Protocol: Bluetooth v2.1 + EDR, Class 2
Data Rate: 3Mbps
Power - Output: 4dBm
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -86dBm
Package / Case: 35-SMD Module
Packaging: Bulk
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| RN42-I/RMCOS477 |
Виробник: Microchip Technology
Description: MODULE
Part Status: Obsolete
Serial Interfaces: SPI, UART
RF Family/Standard: Bluetooth
Antenna Type: PCB Trace
DigiKey Programmable: Not Verified
Protocol: Bluetooth v2.1 + EDR, Class 2
Data Rate: 3Mbps
Power - Output: 4dBm
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -86dBm
Package / Case: 35-SMD Module
Packaging: Bulk
Description: MODULE
Part Status: Obsolete
Serial Interfaces: SPI, UART
RF Family/Standard: Bluetooth
Antenna Type: PCB Trace
DigiKey Programmable: Not Verified
Protocol: Bluetooth v2.1 + EDR, Class 2
Data Rate: 3Mbps
Power - Output: 4dBm
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -86dBm
Package / Case: 35-SMD Module
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| JANS2N3868S |
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.003A TO39
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 mA
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Description: TRANS PNP 60V 0.003A TO39
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 mA
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| MXRT100KP85CA/TR |
Виробник: Microchip Technology
Description: TVS DIODE 85VWM 166VC CASE 5A
Description: TVS DIODE 85VWM 166VC CASE 5A
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| MXLRT100KP48A/TR |
Виробник: Microchip Technology
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 100000W (100kW)
Voltage - Clamping (Max) @ Ipp: 94.3V
Voltage - Breakdown (Min): 53.3V
Unidirectional Channels: 1
Supplier Device Package: Case 5A (DO-204AR)
Voltage - Reverse Standoff (Typ): 48V
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 100000W (100kW)
Voltage - Clamping (Max) @ Ipp: 94.3V
Voltage - Breakdown (Min): 53.3V
Unidirectional Channels: 1
Supplier Device Package: Case 5A (DO-204AR)
Voltage - Reverse Standoff (Typ): 48V
товару немає в наявності
В кошику
од. на суму грн.
| MRT100KP250A |
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Виробник: Microchip Technology
Description: TVS DIODE 250VWM 493VC CASE 5A
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 100000W (100kW)
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Voltage - Clamping (Max) @ Ipp: 493V
Voltage - Breakdown (Min): 278V
Unidirectional Channels: 1
Supplier Device Package: Case 5A (DO-204AR)
Voltage - Reverse Standoff (Typ): 250V
Applications: General Purpose
Description: TVS DIODE 250VWM 493VC CASE 5A
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 100000W (100kW)
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Voltage - Clamping (Max) @ Ipp: 493V
Voltage - Breakdown (Min): 278V
Unidirectional Channels: 1
Supplier Device Package: Case 5A (DO-204AR)
Voltage - Reverse Standoff (Typ): 250V
Applications: General Purpose
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| MRT100KP48AE3 |
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Виробник: Microchip Technology
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 100000W (100kW)
Voltage - Clamping (Max) @ Ipp: 94.3V
Voltage - Breakdown (Min): 53.3V
Unidirectional Channels: 1
Supplier Device Package: Case 5A (DO-204AR)
Voltage - Reverse Standoff (Typ): 48V
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 100000W (100kW)
Voltage - Clamping (Max) @ Ipp: 94.3V
Voltage - Breakdown (Min): 53.3V
Unidirectional Channels: 1
Supplier Device Package: Case 5A (DO-204AR)
Voltage - Reverse Standoff (Typ): 48V
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| MXLRT100KP40CA |
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Виробник: Microchip Technology
Description: TVS DIODE 40VWM 78.6VC CASE 5A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 100000W (100kW)
Voltage - Clamping (Max) @ Ipp: 78.6V
Voltage - Breakdown (Min): 44.4V
Bidirectional Channels: 1
Supplier Device Package: Case 5A (DO-204AR)
Voltage - Reverse Standoff (Typ): 40V
Description: TVS DIODE 40VWM 78.6VC CASE 5A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 100000W (100kW)
Voltage - Clamping (Max) @ Ipp: 78.6V
Voltage - Breakdown (Min): 44.4V
Bidirectional Channels: 1
Supplier Device Package: Case 5A (DO-204AR)
Voltage - Reverse Standoff (Typ): 40V
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В кошику
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| MXRT100KP350Ae3 |
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Виробник: Microchip Technology
Description: TVS DIODE 350VWM 690VC CASE 5A
Description: TVS DIODE 350VWM 690VC CASE 5A
товару немає в наявності
В кошику
од. на суму грн.
| MXRT100KP78CA |
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Виробник: Microchip Technology
Description: TVS DIODE 78VWM 153VC CASE 5A
Description: TVS DIODE 78VWM 153VC CASE 5A
товару немає в наявності
В кошику
од. на суму грн.
| MXRT100KP220A/TR |
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 434VC CASE 5A
Description: TVS DIODE 220VWM 434VC CASE 5A
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| MXRT100KP60A/TR |
Виробник: Microchip Technology
Description: TVS DIODE 60VWM 118VC CASE 5A
Description: TVS DIODE 60VWM 118VC CASE 5A
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| MRT100KP51A |
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Виробник: Microchip Technology
Description: TVS DIODE 51VWM 101VC CASE 5A
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 100000W (100kW)
Voltage - Clamping (Max) @ Ipp: 101V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: Case 5A (DO-204AR)
Voltage - Reverse Standoff (Typ): 51V
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Description: TVS DIODE 51VWM 101VC CASE 5A
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 100000W (100kW)
Voltage - Clamping (Max) @ Ipp: 101V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: Case 5A (DO-204AR)
Voltage - Reverse Standoff (Typ): 51V
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| ZL40205LDF1 |
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Виробник: Microchip Technology
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Output: LVPECL
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Frequency - Max: 750 MHz
Part Status: Active
Supplier Device Package: 32-QFN (5x5)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:6
Voltage - Supply: 2.375V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Type: Fanout Buffer (Distribution)
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Output: LVPECL
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Frequency - Max: 750 MHz
Part Status: Active
Supplier Device Package: 32-QFN (5x5)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:6
Voltage - Supply: 2.375V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Type: Fanout Buffer (Distribution)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| ZL40205LDF1 |
![]() |
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Frequency - Max: 750 MHz
Part Status: Active
Supplier Device Package: 32-QFN (5x5)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:6
Voltage - Supply: 2.375V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Type: Fanout Buffer (Distribution)
Output: LVPECL
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Frequency - Max: 750 MHz
Part Status: Active
Supplier Device Package: 32-QFN (5x5)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:6
Voltage - Supply: 2.375V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Type: Fanout Buffer (Distribution)
Output: LVPECL
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3981 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 413.78 грн |
| 25+ | 332.69 грн |
| 100+ | 321.78 грн |
| MSCDC450A120AG |
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Виробник: Microchip Technology
Description: PM-DIODE-SIC-SBD-SP6C
Description: PM-DIODE-SIC-SBD-SP6C
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 40952.17 грн |
| MSCDC450A70AG |
![]() |
Виробник: Microchip Technology
Description: PM-DIODE-SIC-SBD-SP6C
Description: PM-DIODE-SIC-SBD-SP6C
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 30189.98 грн |
| DSC6111HI1B-013.5600T |
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Виробник: Microchip Technology
Description: MEMS CMOS OSC SMD
Description: MEMS CMOS OSC SMD
товару немає в наявності
В кошику
од. на суму грн.
| BZV55C11/TR |
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Виробник: Microchip Technology
Description: DIODE ZENER 11V DO213AA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 11V DO213AA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 304 шт
В кошику
од. на суму грн.
| MSMLJ60A |
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Виробник: Microchip Technology
Description: TVS DIODE 60VWM 96.8VC DO214AB
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 96.8V
Voltage - Breakdown (Min): 66.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB
Voltage - Reverse Standoff (Typ): 60V
Current - Peak Pulse (10/1000µs): 31A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
Description: TVS DIODE 60VWM 96.8VC DO214AB
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 96.8V
Voltage - Breakdown (Min): 66.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB
Voltage - Reverse Standoff (Typ): 60V
Current - Peak Pulse (10/1000µs): 31A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| MA5KP24Ae3 |
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Виробник: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| MA5KP22CA |
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Виробник: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| MA5KP22CAe3 |
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Виробник: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| MA5KP26CA |
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Виробник: Microchip Technology
Description: TVS DIODE 26VWM 42.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 26VWM 42.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| MA5KP24A |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JANKCBM2N2221A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| JANSF2N2221AUBC/TR |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANKCBD2N2221A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| JANSL2N2221AUA |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSM2N2221AUA/TR |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSP2N2221AUA |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANS2N2221UB |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Voltage - Collector Emitter Breakdown (Max): 30 V
Supplier Device Package: UB
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Description: SMALL-SIGNAL BJT
Voltage - Collector Emitter Breakdown (Max): 30 V
Supplier Device Package: UB
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSD2N2221AUB/TR |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
Description: RH SMALL-SIGNAL BJT
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSP2N2221AUB |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSR2N2221AUB/TR |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANTXV2N2221AUB/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 115 шт
В кошику
од. на суму грн.
| JANSD2N2221AUA |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Description: RH SMALL-SIGNAL BJT
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSF2N2221A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANTXV2N2221AUA/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JANS2N2221AUB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A UB
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Qualification: MIL-PRF-19500/255
Grade: Military
Description: TRANS NPN 50V 0.8A UB
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Qualification: MIL-PRF-19500/255
Grade: Military
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSF2N2221AUBC |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSG2N2221AUBC/TR |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSF2N2221AUA |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSR2N2221A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Description: RH SMALL-SIGNAL BJT
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSP2N2221AUBC |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSR2N2221AUA |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Description: RH SMALL-SIGNAL BJT
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSR2N2221AUA/TR |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: RH SMALL-SIGNAL BJT
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSL2N2221AUB |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSF2N2221AL |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANKCBR2N2221A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Power - Max: 500 mW
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| JANSD2N2221AUBC/TR |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 50 шт
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од. на суму грн.
| JANTX2N2221AUB/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 100 шт
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од. на суму грн.
| 24FC01T-I/MUY |
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Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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