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RN42N-I/RMCOS477 Microchip Technology Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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RN42-I/RMCOS477 Microchip Technology Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: PCB Trace
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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JANS2N3868S JANS2N3868S Microchip Technology Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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MXRT100KP85CA/TR MXRT100KP85CA/TR Microchip Technology Description: TVS DIODE 85VWM 166VC CASE 5A
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MXLRT100KP48A/TR MXLRT100KP48A/TR Microchip Technology Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
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MRT100KP250A MRT100KP250A Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MRT100KP48AE3 MRT100KP48AE3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLRT100KP40CA MXLRT100KP40CA Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 40VWM 78.6VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 78.6V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
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MXRT100KP350Ae3 MXRT100KP350Ae3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 350VWM 690VC CASE 5A
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MXRT100KP78CA MXRT100KP78CA Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 78VWM 153VC CASE 5A
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MXRT100KP220A/TR MXRT100KP220A/TR Microchip Technology Description: TVS DIODE 220VWM 434VC CASE 5A
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MXRT100KP60A/TR MXRT100KP60A/TR Microchip Technology Description: TVS DIODE 60VWM 118VC CASE 5A
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MRT100KP51A MRT100KP51A Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 51VWM 101VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 101V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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ZL40205LDF1 ZL40205LDF1 Microchip Technology 126615-zl40205 Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
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ZL40205LDF1 ZL40205LDF1 Microchip Technology 126615-zl40205 Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
на замовлення 3981 шт:
термін постачання 21-31 дні (днів)
1+409.16 грн
25+328.98 грн
100+318.19 грн
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MSCDC450A120AG MSCDC450A120AG Microchip Technology 1244380-mscdc450a120ag-datasheet Description: PM-DIODE-SIC-SBD-SP6C
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+40495.11 грн
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MSCDC450A70AG MSCDC450A70AG Microchip Technology 1244352-mscdc450a70ag-datasheet Description: PM-DIODE-SIC-SBD-SP6C
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+29853.04 грн
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DSC6111HI1B-013.5600T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS CMOS OSC SMD
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CDLL4962 Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Bulk
Part Status: Active
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BZV55C11/TR BZV55C11/TR Microchip Technology 8298-bzv55-c2v4-c75-pdf.pdf Description: DIODE ZENER 11V DO213AA
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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MSMLJ60A MSMLJ60A Microchip Technology 10563-msml-datasheet Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP24Ae3 MA5KP24Ae3 Microchip Technology rf01010_rb.pdf Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MA5KP22CA MA5KP22CA Microchip Technology rf01010_rb.pdf Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MA5KP22CAe3 MA5KP22CAe3 Microchip Technology rf01010_rb.pdf Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MA5KP26CA MA5KP26CA Microchip Technology rf01010_rb.pdf Description: TVS DIODE 26VWM 42.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MA5KP24A MA5KP24A Microchip Technology rf01010_rb.pdf Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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JANKCBM2N2221A JANKCBM2N2221A Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSF2N2221AUBC/TR JANSF2N2221AUBC/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANKCBD2N2221A JANKCBD2N2221A Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSL2N2221AUA JANSL2N2221AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSM2N2221AUA/TR JANSM2N2221AUA/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSP2N2221AUA JANSP2N2221AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANS2N2221UB JANS2N2221UB Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 30 V
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JANSD2N2221AUB/TR JANSD2N2221AUB/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANS2N2221UA/TR Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
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JANSP2N2221AUB JANSP2N2221AUB Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSR2N2221AUB/TR JANSR2N2221AUB/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANTXV2N2221AUB/TR JANTXV2N2221AUB/TR Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSD2N2221AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSF2N2221A JANSF2N2221A Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANTXV2N2221AUA/TR JANTXV2N2221AUA/TR Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANS2N2221AUB/TR JANS2N2221AUB/TR Microchip Technology Description: TRANS NPN 50V 0.8A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
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JANSF2N2221AUBC Microchip Technology Description: RH SMALL-SIGNAL BJT
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JANSG2N2221AUBC/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
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JANSF2N2221AUA JANSF2N2221AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSR2N2221A JANSR2N2221A Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSP2N2221AUBC JANSP2N2221AUBC Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSR2N2221AUA JANSR2N2221AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSR2N2221AUA/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSL2N2221AUB JANSL2N2221AUB Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSF2N2221AL JANSF2N2221AL Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANKCBR2N2221A JANKCBR2N2221A Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSD2N2221AUBC/TR JANSD2N2221AUBC/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANTX2N2221AUB/TR JANTX2N2221AUB/TR Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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24FC01T-I/MUY 24FC01T-I/MUY Microchip Technology 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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24FC01T-I/MUY 24FC01T-I/MUY Microchip Technology 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
на замовлення 4683 шт:
термін постачання 21-31 дні (днів)
24+13.30 грн
100+12.52 грн
Мінімальне замовлення: 24
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24FC04T-E/MUY 24FC04T-E/MUY Microchip Technology 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 450 ns
Memory Organization: 256 x 8 x 2
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+19.44 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
24FC04T-E/MUY 24FC04T-E/MUY Microchip Technology 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 450 ns
Memory Organization: 256 x 8 x 2
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
15+21.12 грн
25+19.26 грн
100+18.72 грн
Мінімальне замовлення: 15
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24FC01T-I/MS 24FC01T-I/MS Microchip Technology 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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24FC01T-I/MS 24FC01T-I/MS Microchip Technology 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
на замовлення 2371 шт:
термін постачання 21-31 дні (днів)
17+18.78 грн
Мінімальне замовлення: 17
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RN42N-I/RMCOS477
Виробник: Microchip Technology
Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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RN42-I/RMCOS477
Виробник: Microchip Technology
Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: PCB Trace
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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JANS2N3868S
JANS2N3868S
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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MXRT100KP85CA/TR
MXRT100KP85CA/TR
Виробник: Microchip Technology
Description: TVS DIODE 85VWM 166VC CASE 5A
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MXLRT100KP48A/TR
MXLRT100KP48A/TR
Виробник: Microchip Technology
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
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MRT100KP250A 77294-mrt100kp-pdf
MRT100KP250A
Виробник: Microchip Technology
Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MRT100KP48AE3 77294-mrt100kp-pdf
MRT100KP48AE3
Виробник: Microchip Technology
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLRT100KP40CA 77294-mrt100kp-pdf
MXLRT100KP40CA
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 78.6VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 78.6V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
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MXRT100KP350Ae3 77294-mrt100kp-pdf
MXRT100KP350Ae3
Виробник: Microchip Technology
Description: TVS DIODE 350VWM 690VC CASE 5A
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MXRT100KP78CA 77294-mrt100kp-pdf
MXRT100KP78CA
Виробник: Microchip Technology
Description: TVS DIODE 78VWM 153VC CASE 5A
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MXRT100KP220A/TR
MXRT100KP220A/TR
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 434VC CASE 5A
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MXRT100KP60A/TR
MXRT100KP60A/TR
Виробник: Microchip Technology
Description: TVS DIODE 60VWM 118VC CASE 5A
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MRT100KP51A 77294-mrt100kp-pdf
MRT100KP51A
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 101VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 101V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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ZL40205LDF1 126615-zl40205
ZL40205LDF1
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
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ZL40205LDF1 126615-zl40205
ZL40205LDF1
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
на замовлення 3981 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+409.16 грн
25+328.98 грн
100+318.19 грн
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MSCDC450A120AG 1244380-mscdc450a120ag-datasheet
MSCDC450A120AG
Виробник: Microchip Technology
Description: PM-DIODE-SIC-SBD-SP6C
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+40495.11 грн
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MSCDC450A70AG 1244352-mscdc450a70ag-datasheet
MSCDC450A70AG
Виробник: Microchip Technology
Description: PM-DIODE-SIC-SBD-SP6C
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+29853.04 грн
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DSC6111HI1B-013.5600T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
Виробник: Microchip Technology
Description: MEMS CMOS OSC SMD
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CDLL4962
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Part Status: Active
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BZV55C11/TR 8298-bzv55-c2v4-c75-pdf.pdf
BZV55C11/TR
Виробник: Microchip Technology
Description: DIODE ZENER 11V DO213AA
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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MSMLJ60A 10563-msml-datasheet
MSMLJ60A
Виробник: Microchip Technology
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP24Ae3 rf01010_rb.pdf
MA5KP24Ae3
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MA5KP22CA rf01010_rb.pdf
MA5KP22CA
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MA5KP22CAe3 rf01010_rb.pdf
MA5KP22CAe3
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MA5KP26CA rf01010_rb.pdf
MA5KP26CA
Виробник: Microchip Technology
Description: TVS DIODE 26VWM 42.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MA5KP24A rf01010_rb.pdf
MA5KP24A
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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JANKCBM2N2221A
JANKCBM2N2221A
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSF2N2221AUBC/TR
JANSF2N2221AUBC/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANKCBD2N2221A
JANKCBD2N2221A
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSL2N2221AUA
JANSL2N2221AUA
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSM2N2221AUA/TR
JANSM2N2221AUA/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSP2N2221AUA
JANSP2N2221AUA
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANS2N2221UB
JANS2N2221UB
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 30 V
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JANSD2N2221AUB/TR
JANSD2N2221AUB/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANS2N2221UA/TR
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
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JANSP2N2221AUB
JANSP2N2221AUB
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSR2N2221AUB/TR
JANSR2N2221AUB/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANTXV2N2221AUB/TR
JANTXV2N2221AUB/TR
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSD2N2221AUA
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSF2N2221A
JANSF2N2221A
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANTXV2N2221AUA/TR
JANTXV2N2221AUA/TR
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANS2N2221AUB/TR
JANS2N2221AUB/TR
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
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JANSF2N2221AUBC
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
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JANSG2N2221AUBC/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
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JANSF2N2221AUA
JANSF2N2221AUA
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSR2N2221A
JANSR2N2221A
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSP2N2221AUBC
JANSP2N2221AUBC
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSR2N2221AUA
JANSR2N2221AUA
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSR2N2221AUA/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSL2N2221AUB
JANSL2N2221AUB
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSF2N2221AL
JANSF2N2221AL
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANKCBR2N2221A
JANKCBR2N2221A
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSD2N2221AUBC/TR
JANSD2N2221AUBC/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANTX2N2221AUB/TR
JANTX2N2221AUB/TR
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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24FC01T-I/MUY 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf
24FC01T-I/MUY
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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24FC01T-I/MUY 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf
24FC01T-I/MUY
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
на замовлення 4683 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.30 грн
100+12.52 грн
Мінімальне замовлення: 24
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24FC04T-E/MUY 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf
24FC04T-E/MUY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 450 ns
Memory Organization: 256 x 8 x 2
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+19.44 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
24FC04T-E/MUY 24AA04-24LC04B-24FC04-4K-I2C-Serial-EEPROM-20001708P.pdf
24FC04T-E/MUY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 450 ns
Memory Organization: 256 x 8 x 2
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+21.12 грн
25+19.26 грн
100+18.72 грн
Мінімальне замовлення: 15
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24FC01T-I/MS 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf
24FC01T-I/MS
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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24FC01T-I/MS 24AA01-24LC01B-24FC01-1K-I2C-Serial-EEPROM-20001711M.pdf
24FC01T-I/MS
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
на замовлення 2371 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+18.78 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
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