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MXSMBG51CAe3 MXSMBG51CAe3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 51VWM 82.4VC SMBG
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MSMBG51CAe3 MSMBG51CAe3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 51VWM 82.4VC SMBG
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MXSMBG51A MXSMBG51A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 51VWM 82.4VC SMBG
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MXSMBG51CA MXSMBG51CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 51VWM 82.4VC SMBG
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MASMBG51Ae3 MASMBG51Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 51VWM 82.4VC SMBG
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MXSMBG51Ae3 MXSMBG51Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 51VWM 82.4VC SMBG
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1N4741AGE3 1N4741AGE3 Microchip Technology Description: DIODE ZENER 11V 1W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
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1N4741AGE3/TR 1N4741AGE3/TR Microchip Technology Description: DIODE ZENER 11V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
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SST25VF512-20-4C-SAE-T SST25VF512-20-4C-SAE-T Microchip Technology 25076A.pdf Description: IC FLASH 512KBIT SPI 20MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 20 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 20µs
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Verified
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SST25VF512-20-4C-SAE-T SST25VF512-20-4C-SAE-T Microchip Technology 25076A.pdf Description: IC FLASH 512KBIT SPI 20MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 20 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 20µs
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Verified
на замовлення 2982 шт:
термін постачання 21-31 дні (днів)
7+53.26 грн
25+49.45 грн
100+47.24 грн
Мінімальне замовлення: 7
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24CS512-I/P 24CS512-I/P Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 264 шт:
термін постачання 21-31 дні (днів)
3+109.74 грн
25+100.36 грн
100+97.30 грн
Мінімальне замовлення: 3
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24CS512T-E/MS 24CS512T-E/MS Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+97.36 грн
Мінімальне замовлення: 2500
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24CS512T-E/MS 24CS512T-E/MS Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 3878 шт:
термін постачання 21-31 дні (днів)
4+105.70 грн
25+96.69 грн
100+93.75 грн
Мінімальне замовлення: 4
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24CS512-E/MS 24CS512-E/MS Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
3+109.74 грн
25+100.36 грн
100+97.30 грн
Мінімальне замовлення: 3
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24CS512-I/MS 24CS512-I/MS Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
4+102.48 грн
25+95.79 грн
100+91.17 грн
Мінімальне замовлення: 4
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DRF1400-CLASS-D DRF1400-CLASS-D Microchip Technology 124244-drf1400-13-56-mhz-class-d-half-bridge-rf-generator Description: RF MOSFET (VDMOS) PUSH-PULL 13.5
Packaging: Bulk
Function: RF Generator
Type: Power Management
Utilized IC / Part: DRF1400
Supplied Contents: Board(s)
Secondary Attributes: On-Board LEDs
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+358032.92 грн
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JANTXV1N4148-1 JANTXV1N4148-1 Microchip Technology 1N4148.pdf Description: DIODE STANDARD 75V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: MIL-PRF-19500/116
на замовлення 1425 шт:
термін постачання 21-31 дні (днів)
4+88.76 грн
100+79.62 грн
Мінімальне замовлення: 4
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JAN1N4148-1/TR JAN1N4148-1/TR Microchip Technology 125211-lds-0281-datasheet Description: DIODE GEN PURP 75V 200MA DO213AA
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CD5333B CD5333B Microchip Technology 8375-cd5333b-cd5379b-datasheet Description: DIODE ZENER 3.3V 5W DIE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: Die
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 1 V
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RN42N-I/RMCOS477 Microchip Technology Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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RN42-I/RMCOS477 Microchip Technology Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: PCB Trace
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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JANS2N3868S JANS2N3868S Microchip Technology Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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MXRT100KP85CA/TR MXRT100KP85CA/TR Microchip Technology Description: TVS DIODE 85VWM 166VC CASE 5A
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MXLRT100KP48A/TR MXLRT100KP48A/TR Microchip Technology Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
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MRT100KP250A MRT100KP250A Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MRT100KP48AE3 MRT100KP48AE3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLRT100KP40CA MXLRT100KP40CA Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 40VWM 78.6VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 78.6V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
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MXRT100KP350Ae3 MXRT100KP350Ae3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 350VWM 690VC CASE 5A
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MXRT100KP78CA MXRT100KP78CA Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 78VWM 153VC CASE 5A
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MXRT100KP220A/TR MXRT100KP220A/TR Microchip Technology Description: TVS DIODE 220VWM 434VC CASE 5A
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MXRT100KP60A/TR MXRT100KP60A/TR Microchip Technology Description: TVS DIODE 60VWM 118VC CASE 5A
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MRT100KP51A MRT100KP51A Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 51VWM 101VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 101V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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ZL40205LDF1 ZL40205LDF1 Microchip Technology 126615-zl40205 Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
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ZL40205LDF1 ZL40205LDF1 Microchip Technology 126615-zl40205 Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
на замовлення 3981 шт:
термін постачання 21-31 дні (днів)
1+422.01 грн
25+339.31 грн
100+328.18 грн
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MSCDC450A120AG MSCDC450A120AG Microchip Technology 1244380-mscdc450a120ag-datasheet Description: PM-DIODE-SIC-SBD-SP6C
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+41766.58 грн
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MSCDC450A70AG MSCDC450A70AG Microchip Technology 1244352-mscdc450a70ag-datasheet Description: PM-DIODE-SIC-SBD-SP6C
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+30790.37 грн
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DSC6111HI1B-013.5600T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS CMOS OSC SMD
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CDLL4962 Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Bulk
Part Status: Active
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BZV55C11/TR BZV55C11/TR Microchip Technology 8298-bzv55-c2v4-c75-pdf.pdf Description: DIODE ZENER 11V DO213AA
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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MSMLJ60A MSMLJ60A Microchip Technology 10563-msml-datasheet Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP24Ae3 MA5KP24Ae3 Microchip Technology rf01010_rb.pdf Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP22CA MA5KP22CA Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP22CAe3 MA5KP22CAe3 Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP26CA MA5KP26CA Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 26VWM 42.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP24A MA5KP24A Microchip Technology rf01010_rb.pdf Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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JANKCBM2N2221A JANKCBM2N2221A Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSF2N2221AUBC/TR JANSF2N2221AUBC/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANKCBD2N2221A JANKCBD2N2221A Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSL2N2221AUA JANSL2N2221AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSM2N2221AUA/TR JANSM2N2221AUA/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSP2N2221AUA JANSP2N2221AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANS2N2221UB JANS2N2221UB Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 30 V
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JANSD2N2221AUB/TR JANSD2N2221AUB/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANS2N2221UA/TR Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
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JANSP2N2221AUB JANSP2N2221AUB Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSR2N2221AUB/TR JANSR2N2221AUB/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANTXV2N2221AUB/TR JANTXV2N2221AUB/TR Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSD2N2221AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSF2N2221A JANSF2N2221A Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANTXV2N2221AUA/TR JANTXV2N2221AUA/TR Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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MXSMBG51CAe3 10560-msmb-datasheet
MXSMBG51CAe3
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC SMBG
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MSMBG51CAe3 10560-msmb-datasheet
MSMBG51CAe3
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC SMBG
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MXSMBG51A 10560-msmb-datasheet
MXSMBG51A
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC SMBG
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MXSMBG51CA 10560-msmb-datasheet
MXSMBG51CA
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC SMBG
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MASMBG51Ae3 10560-msmb-datasheet
MASMBG51Ae3
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC SMBG
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MXSMBG51Ae3 10560-msmb-datasheet
MXSMBG51Ae3
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC SMBG
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1N4741AGE3
1N4741AGE3
Виробник: Microchip Technology
Description: DIODE ZENER 11V 1W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
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1N4741AGE3/TR
1N4741AGE3/TR
Виробник: Microchip Technology
Description: DIODE ZENER 11V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
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SST25VF512-20-4C-SAE-T 25076A.pdf
SST25VF512-20-4C-SAE-T
Виробник: Microchip Technology
Description: IC FLASH 512KBIT SPI 20MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 20 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 20µs
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Verified
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SST25VF512-20-4C-SAE-T 25076A.pdf
SST25VF512-20-4C-SAE-T
Виробник: Microchip Technology
Description: IC FLASH 512KBIT SPI 20MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 20 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 20µs
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Verified
на замовлення 2982 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+53.26 грн
25+49.45 грн
100+47.24 грн
Мінімальне замовлення: 7
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24CS512-I/P 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512-I/P
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 264 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+109.74 грн
25+100.36 грн
100+97.30 грн
Мінімальне замовлення: 3
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24CS512T-E/MS 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-E/MS
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+97.36 грн
Мінімальне замовлення: 2500
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24CS512T-E/MS 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-E/MS
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 3878 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+105.70 грн
25+96.69 грн
100+93.75 грн
Мінімальне замовлення: 4
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24CS512-E/MS 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512-E/MS
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+109.74 грн
25+100.36 грн
100+97.30 грн
Мінімальне замовлення: 3
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24CS512-I/MS 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512-I/MS
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.48 грн
25+95.79 грн
100+91.17 грн
Мінімальне замовлення: 4
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DRF1400-CLASS-D 124244-drf1400-13-56-mhz-class-d-half-bridge-rf-generator
DRF1400-CLASS-D
Виробник: Microchip Technology
Description: RF MOSFET (VDMOS) PUSH-PULL 13.5
Packaging: Bulk
Function: RF Generator
Type: Power Management
Utilized IC / Part: DRF1400
Supplied Contents: Board(s)
Secondary Attributes: On-Board LEDs
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+358032.92 грн
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JANTXV1N4148-1 1N4148.pdf
JANTXV1N4148-1
Виробник: Microchip Technology
Description: DIODE STANDARD 75V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: MIL-PRF-19500/116
на замовлення 1425 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+88.76 грн
100+79.62 грн
Мінімальне замовлення: 4
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JAN1N4148-1/TR 125211-lds-0281-datasheet
JAN1N4148-1/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO213AA
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CD5333B 8375-cd5333b-cd5379b-datasheet
CD5333B
Виробник: Microchip Technology
Description: DIODE ZENER 3.3V 5W DIE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: Die
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 1 V
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RN42N-I/RMCOS477
Виробник: Microchip Technology
Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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RN42-I/RMCOS477
Виробник: Microchip Technology
Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: PCB Trace
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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JANS2N3868S
JANS2N3868S
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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MXRT100KP85CA/TR
MXRT100KP85CA/TR
Виробник: Microchip Technology
Description: TVS DIODE 85VWM 166VC CASE 5A
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MXLRT100KP48A/TR
MXLRT100KP48A/TR
Виробник: Microchip Technology
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
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MRT100KP250A 77294-mrt100kp-pdf
MRT100KP250A
Виробник: Microchip Technology
Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MRT100KP48AE3 77294-mrt100kp-pdf
MRT100KP48AE3
Виробник: Microchip Technology
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLRT100KP40CA 77294-mrt100kp-pdf
MXLRT100KP40CA
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 78.6VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 78.6V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
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MXRT100KP350Ae3 77294-mrt100kp-pdf
MXRT100KP350Ae3
Виробник: Microchip Technology
Description: TVS DIODE 350VWM 690VC CASE 5A
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MXRT100KP78CA 77294-mrt100kp-pdf
MXRT100KP78CA
Виробник: Microchip Technology
Description: TVS DIODE 78VWM 153VC CASE 5A
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MXRT100KP220A/TR
MXRT100KP220A/TR
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 434VC CASE 5A
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MXRT100KP60A/TR
MXRT100KP60A/TR
Виробник: Microchip Technology
Description: TVS DIODE 60VWM 118VC CASE 5A
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MRT100KP51A 77294-mrt100kp-pdf
MRT100KP51A
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 101VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 101V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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ZL40205LDF1 126615-zl40205
ZL40205LDF1
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
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ZL40205LDF1 126615-zl40205
ZL40205LDF1
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
на замовлення 3981 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+422.01 грн
25+339.31 грн
100+328.18 грн
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MSCDC450A120AG 1244380-mscdc450a120ag-datasheet
MSCDC450A120AG
Виробник: Microchip Technology
Description: PM-DIODE-SIC-SBD-SP6C
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+41766.58 грн
В кошику  од. на суму  грн.
MSCDC450A70AG 1244352-mscdc450a70ag-datasheet
MSCDC450A70AG
Виробник: Microchip Technology
Description: PM-DIODE-SIC-SBD-SP6C
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+30790.37 грн
В кошику  од. на суму  грн.
DSC6111HI1B-013.5600T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
Виробник: Microchip Technology
Description: MEMS CMOS OSC SMD
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CDLL4962
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Part Status: Active
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BZV55C11/TR 8298-bzv55-c2v4-c75-pdf.pdf
BZV55C11/TR
Виробник: Microchip Technology
Description: DIODE ZENER 11V DO213AA
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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MSMLJ60A 10563-msml-datasheet
MSMLJ60A
Виробник: Microchip Technology
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP24Ae3 rf01010_rb.pdf
MA5KP24Ae3
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP22CA 9461-m5kp-pdf
MA5KP22CA
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP22CAe3 9461-m5kp-pdf
MA5KP22CAe3
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP26CA 9461-m5kp-pdf
MA5KP26CA
Виробник: Microchip Technology
Description: TVS DIODE 26VWM 42.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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MA5KP24A rf01010_rb.pdf
MA5KP24A
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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JANKCBM2N2221A
JANKCBM2N2221A
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSF2N2221AUBC/TR
JANSF2N2221AUBC/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANKCBD2N2221A
JANKCBD2N2221A
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSL2N2221AUA
JANSL2N2221AUA
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSM2N2221AUA/TR
JANSM2N2221AUA/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSP2N2221AUA
JANSP2N2221AUA
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANS2N2221UB
JANS2N2221UB
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 30 V
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JANSD2N2221AUB/TR
JANSD2N2221AUB/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANS2N2221UA/TR
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
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JANSP2N2221AUB
JANSP2N2221AUB
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSR2N2221AUB/TR
JANSR2N2221AUB/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANTXV2N2221AUB/TR
JANTXV2N2221AUB/TR
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSD2N2221AUA
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
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JANSF2N2221A
JANSF2N2221A
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANTXV2N2221AUA/TR
JANTXV2N2221AUA/TR
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
товару немає в наявності
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