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JANSH2N3439U4 Microchip Technology Description: RH POWER BJT
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JANSD2N3439 JANSD2N3439 Microchip Technology Description: RH POWER BJT
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JANKCBM2N3439 JANKCBM2N3439 Microchip Technology Description: RH POWER BJT
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JANSP2N3439L JANSP2N3439L Microchip Technology Description: RH POWER BJT
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JAN2N3439P JAN2N3439P Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
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JANKCBF2N3439 Microchip Technology Description: RH POWER BJT
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2N3700AUB/TR 2N3700AUB/TR Microchip Technology 125348-lds-0185-2.pdf Description: TRANS NPN 80V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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JANSP2N3700UB JANSP2N3700UB Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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2N708 2N708 Microchip Technology Description: TRANS NPN 15V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TA)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 25nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
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VC-889-EAE-KAAN-32K7680000 VC-889-EAE-KAAN-32K7680000 Microchip Technology Description: VC-889-EAE-KAAN-32K7680000
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VMK3-1012-32K7680000 VMK3-1012-32K7680000 Microchip Technology Description: VMK3-1012-32K7680000
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VC-840-EAE-KAAN-32K7680000TR VC-840-EAE-KAAN-32K7680000TR Microchip Technology VC-840-April-2020.pdf Description: VC-840-EAE-KAAN-32K7680000TR
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VMK3-1001-32K7680000 VMK3-1001-32K7680000 Microchip Technology Description: VMK3-1001-32K7680000
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VC-889-EAE-KAAN-32K7680000TR VC-889-EAE-KAAN-32K7680000TR Microchip Technology Description: VC-889-EAE-KAAN-32K7680000TR
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DSA6011HL2B-032K768TVAO Microchip Technology DSA60xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006221A.pdf Description: MEMS OSC AUTO LOWPWR -40C-105C
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VC-801-EAC-KAAN-32K7680000 VC-801-EAC-KAAN-32K7680000 Microchip Technology Description: OSCILLATOR CMOS SMD
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DSC6111HL1B-032K768T Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf Description: MEMS OSC ULP LVCMOS -40C-105C 50
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MIC4684-3.3BM TR MIC4684-3.3BM TR Microchip Technology MIC4684.pdf Description: IC REG BUCK 3.3V 2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Voltage - Input (Max): 30V
Topology: Buck
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
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2N3445 2N3445 Microchip Technology Description: TRANS NPN 60V 7A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300µA, 3mA
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 115 W
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JAN2N5151 JAN2N5151 Microchip Technology 8945-lds-0132-datasheet Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
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JANTX2N5151 JANTX2N5151 Microchip Technology 8945-lds-0132-datasheet Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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Jantxv2N5151 Jantxv2N5151 Microchip Technology 8945-lds-0132-datasheet Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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2N5151 2N5151 Microchip Technology 8945-lds-0132-datasheet Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANS2N5151 JANS2N5151 Microchip Technology Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANKCCF2N5151 JANKCCF2N5151 Microchip Technology Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANSF2N5151 JANSF2N5151 Microchip Technology Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANTX2N5151U3 JANTX2N5151U3 Microchip Technology Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANKCC2N5151 JANKCC2N5151 Microchip Technology Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANTXV2N5151U3 JANTXV2N5151U3 Microchip Technology Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JAN2N5151U3 JAN2N5151U3 Microchip Technology Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANKCCR2N5151 JANKCCR2N5151 Microchip Technology Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANSM2N5151U3 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANSL2N5151 JANSL2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSR2N5151U3 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANKCCL2N5151 JANKCCL2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSR2N5151 JANSR2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSD2N5151 JANSD2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSL2N5151U3 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANSP2N5151 JANSP2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSF2N5151U3 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANS2N5151U3 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANKCCP2N5151 JANKCCP2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSD2N5151U3 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANKCCD2N5151 JANKCCD2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSP2N5151U3 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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2N5151U3 2N5151U3 Microchip Technology Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANSM2N5151 JANSM2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANKCCM2N5151 JANKCCM2N5151 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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2N5322E3 2N5322E3 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W
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AVR16DD14-I/SL AVR16DD14-I/SL Microchip Technology AVR32-16DD20-14-Complete-DataSheet-DS40002413.pdf Description: IC MCU 8BIT 16KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 3983 шт:
термін постачання 21-31 дні (днів)
6+53.86 грн
25+48.23 грн
100+43.15 грн
Мінімальне замовлення: 6
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ATWINC3400-MR210UA142 ATWINC3400-MR210UA142 Microchip Technology IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tray
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 72.2Mbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.68mA ~ 63.9mA
Current - Transmitting: 23.68mA ~ 275mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: ATWINC3400
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 138 шт:
термін постачання 21-31 дні (днів)
1+1044.40 грн
25+910.35 грн
100+861.81 грн
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ATWINC3400-MR210UA142-T ATWINC3400-MR210UA142-T Microchip Technology IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tape & Reel (TR)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 72.2Mbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.68mA ~ 63.9mA
Current - Transmitting: 23.68mA ~ 275mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: ATWINC3400
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
50+944.08 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
ATWINC3400-MR210UA142-T ATWINC3400-MR210UA142-T Microchip Technology IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Cut Tape (CT)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 72.2Mbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.68mA ~ 63.9mA
Current - Transmitting: 23.68mA ~ 275mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: ATWINC3400
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 325 шт:
термін постачання 21-31 дні (днів)
1+1034.25 грн
25+909.11 грн
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ATWINC3400-MR210CA123 Microchip Technology Description: RX TXRX MODULE WIFI
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ATWINC3400-MR210UA123 Microchip Technology Description: RX TXRX MODULE WIFI
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MXPLAD30KP43Ae3 Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 43VWM 69.4VC PLAD
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MXPLAD30KP51Ae3 Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 51VWM 82.4VC PLAD
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MXPLAD30KP22CAe3 Microchip Technology 9523-mplad30kp-datasheet Description: TVS DIODE 22VWM 36.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 822A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 36.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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24CS512T-E/MS66KVAO 24CS512T-E/MS66KVAO Microchip Technology 24CS512-512-Kbit-3.4MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection-20005769D.pdf Description: 512K I2C SERIAL EEPROM, EXT, 8-M
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HV20220TQ-G HV20220TQ-G Microchip Technology HV20220%20C071613.pdf Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW
Packaging: Tray
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 38Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-TQFP (7x7)
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
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JANSH2N3439U4
Виробник: Microchip Technology
Description: RH POWER BJT
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JANSD2N3439
JANSD2N3439
Виробник: Microchip Technology
Description: RH POWER BJT
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JANKCBM2N3439
JANKCBM2N3439
Виробник: Microchip Technology
Description: RH POWER BJT
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JANSP2N3439L
JANSP2N3439L
Виробник: Microchip Technology
Description: RH POWER BJT
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JAN2N3439P
JAN2N3439P
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
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JANKCBF2N3439
Виробник: Microchip Technology
Description: RH POWER BJT
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2N3700AUB/TR 125348-lds-0185-2.pdf
2N3700AUB/TR
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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JANSP2N3700UB
JANSP2N3700UB
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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2N708
2N708
Виробник: Microchip Technology
Description: TRANS NPN 15V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TA)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 25nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
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VC-889-EAE-KAAN-32K7680000
VC-889-EAE-KAAN-32K7680000
Виробник: Microchip Technology
Description: VC-889-EAE-KAAN-32K7680000
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VMK3-1012-32K7680000
VMK3-1012-32K7680000
Виробник: Microchip Technology
Description: VMK3-1012-32K7680000
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VC-840-EAE-KAAN-32K7680000TR VC-840-April-2020.pdf
VC-840-EAE-KAAN-32K7680000TR
Виробник: Microchip Technology
Description: VC-840-EAE-KAAN-32K7680000TR
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VMK3-1001-32K7680000
VMK3-1001-32K7680000
Виробник: Microchip Technology
Description: VMK3-1001-32K7680000
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VC-889-EAE-KAAN-32K7680000TR
VC-889-EAE-KAAN-32K7680000TR
Виробник: Microchip Technology
Description: VC-889-EAE-KAAN-32K7680000TR
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DSA6011HL2B-032K768TVAO DSA60xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006221A.pdf
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-105C
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VC-801-EAC-KAAN-32K7680000
VC-801-EAC-KAAN-32K7680000
Виробник: Microchip Technology
Description: OSCILLATOR CMOS SMD
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DSC6111HL1B-032K768T DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155A.pdf
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-105C 50
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MIC4684-3.3BM TR MIC4684.pdf
MIC4684-3.3BM TR
Виробник: Microchip Technology
Description: IC REG BUCK 3.3V 2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Voltage - Input (Max): 30V
Topology: Buck
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
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2N3445
2N3445
Виробник: Microchip Technology
Description: TRANS NPN 60V 7A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300µA, 3mA
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 115 W
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JAN2N5151 8945-lds-0132-datasheet
JAN2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
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JANTX2N5151 8945-lds-0132-datasheet
JANTX2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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Jantxv2N5151 8945-lds-0132-datasheet
Jantxv2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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2N5151 8945-lds-0132-datasheet
2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANS2N5151
JANS2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANKCCF2N5151
JANKCCF2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANSF2N5151
JANSF2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANTX2N5151U3
JANTX2N5151U3
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANKCC2N5151
JANKCC2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANTXV2N5151U3
JANTXV2N5151U3
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JAN2N5151U3
JAN2N5151U3
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANKCCR2N5151
JANKCCR2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANSM2N5151U3
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANSL2N5151
JANSL2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSR2N5151U3
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANKCCL2N5151
JANKCCL2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSR2N5151
JANSR2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSD2N5151
JANSD2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSL2N5151U3
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANSP2N5151
JANSP2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSF2N5151U3
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANS2N5151U3
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANKCCP2N5151
JANKCCP2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSD2N5151U3
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANKCCD2N5151
JANKCCD2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANSP2N5151U3
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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2N5151U3
2N5151U3
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: U3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.16 W
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JANSM2N5151
JANSM2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANKCCM2N5151
JANKCCM2N5151
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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2N5322E3
2N5322E3
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W
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AVR16DD14-I/SL AVR32-16DD20-14-Complete-DataSheet-DS40002413.pdf
AVR16DD14-I/SL
Виробник: Microchip Technology
Description: IC MCU 8BIT 16KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 3983 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+53.86 грн
25+48.23 грн
100+43.15 грн
Мінімальне замовлення: 6
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ATWINC3400-MR210UA142 IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf
ATWINC3400-MR210UA142
Виробник: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tray
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 72.2Mbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.68mA ~ 63.9mA
Current - Transmitting: 23.68mA ~ 275mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: ATWINC3400
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 138 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1044.40 грн
25+910.35 грн
100+861.81 грн
В кошику  од. на суму  грн.
ATWINC3400-MR210UA142-T IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf
ATWINC3400-MR210UA142-T
Виробник: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tape & Reel (TR)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 72.2Mbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.68mA ~ 63.9mA
Current - Transmitting: 23.68mA ~ 275mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: ATWINC3400
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
50+944.08 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
ATWINC3400-MR210UA142-T IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf
ATWINC3400-MR210UA142-T
Виробник: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Cut Tape (CT)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 256kB ROM, 708kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 72.2Mbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.68mA ~ 63.9mA
Current - Transmitting: 23.68mA ~ 275mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: ATWINC3400
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DSSS, DQPSK, GFSK, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 325 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1034.25 грн
25+909.11 грн
В кошику  од. на суму  грн.
ATWINC3400-MR210CA123
Виробник: Microchip Technology
Description: RX TXRX MODULE WIFI
товару немає в наявності
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ATWINC3400-MR210UA123
Виробник: Microchip Technology
Description: RX TXRX MODULE WIFI
товару немає в наявності
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MXPLAD30KP43Ae3 9523-mplad30kp-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC PLAD
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MXPLAD30KP51Ae3 9523-mplad30kp-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC PLAD
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MXPLAD30KP22CAe3 9523-mplad30kp-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 36.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 822A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 36.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
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24CS512T-E/MS66KVAO 24CS512-512-Kbit-3.4MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection-20005769D.pdf
24CS512T-E/MS66KVAO
Виробник: Microchip Technology
Description: 512K I2C SERIAL EEPROM, EXT, 8-M
товару немає в наявності
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HV20220TQ-G HV20220%20C071613.pdf
HV20220TQ-G
Виробник: Microchip Technology
Description: 8-CHANNEL HIGH VOLTAGE ANALOG SW
Packaging: Tray
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 38Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-TQFP (7x7)
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
товару немає в наявності
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