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CDLL5258D Microchip Technology Description: VOLTAGE REGULATOR
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MXLRT100KP78CAe3 MXLRT100KP78CAe3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 78VWM 153VC CASE 5A
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MXLRT100KP220CAe3 MXLRT100KP220CAe3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 220VWM 434VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 434V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLRT100KP120CAe3 MXLRT100KP120CAe3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 120VWM 235VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 235V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXLRT100KP70Ae3 MXLRT100KP70Ae3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 70VWM 138VC CASE 5A
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MXLRT100KP85Ae3 MXLRT100KP85Ae3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 85VWM 166VC CASE 5A
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MXLRT100KP200CAe3 MXLRT100KP200CAe3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 200VWM 392VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 392V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLRT100KP43CA MXLRT100KP43CA Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 43VWM 84.5VC CASE 5A
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MXLRT100KP64CA MXLRT100KP64CA Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 64VWM 126VC CASE 5A
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MXLRT100KP250CA MXLRT100KP250CA Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXLRT100KP85CA MXLRT100KP85CA Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 85VWM 166VC CASE 5A
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MXLRT100KP160CAe3 MXLRT100KP160CAe3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 160VWM 315VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 315V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXLRT100KP45CAe3 MXLRT100KP45CAe3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 45VWM 88.5VC CASE 5A
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MXLRT100KP350CA MXLRT100KP350CA Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 350VWM 690VC CASE 5A
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MXLRT100KP90Ae3 MXLRT100KP90Ae3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 90VWM 178VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 178V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
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MXLRT100KP90CAe3 MXLRT100KP90CAe3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 90VWM 178VC CASE 5A
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MXLRT100KP110CA MXLRT100KP110CA Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 110VWM 216VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 216V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLRT100KP280CA MXLRT100KP280CA Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 280VWM 552VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 280V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 311V
Voltage - Clamping (Max) @ Ipp: 552V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
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USB5744B/2GX01 USB5744B/2GX01 Microchip Technology USB5744-Data-Sheet-DS00001855J.pdf Description: IC HUB CTLR USB 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: Serial, SMBus, SPI
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.08V ~ 1.32V, 3V ~ 3.6V
Protocol: USB
Standards: USB 2.0, USB 3.2
Supplier Device Package: 56-VQFN (7x7)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 409 шт:
термін постачання 21-31 дні (днів)
1+481.36 грн
25+385.87 грн
100+372.58 грн
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JANS2N930 JANS2N930 Microchip Technology Description: TRANS NPN 45V 0.03A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Qualification: MIL-PRF-19500/253
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1N4741UR-1 1N4741UR-1 Microchip Technology Description: DIODE ZENER 11V 1W DO213AB
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
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MXSMBG28Ae3 MXSMBG28Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MASMBG28CAe3 MASMBG28CAe3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MXLSMBG28A MXLSMBG28A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MSMBG28CA MSMBG28CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MSMBG28CAe3 MSMBG28CAe3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MASMBG28A MASMBG28A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MASMBG28Ae3 MASMBG28Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MXLSMBG28Ae3 MXLSMBG28Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MXSMBG28CAe3 MXSMBG28CAe3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MSMBG28A MSMBG28A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MXLSMBG28CA MXLSMBG28CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MASMBG28CA MASMBG28CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MSMBG28AE3 MSMBG28AE3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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MXSMBG28CA MXSMBG28CA Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 28VWM 45.4VC SMBG
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JANHCB2N5002 Microchip Technology Description: TRANS NPN 80V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: Die
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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JANHCC2N6193 JANHCC2N6193 Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 100V 5A TO205AD
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-205AD (TO-39)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/561
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JANHCB2N5004 Microchip Technology Description: TRANS NPN 80V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: Die
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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JANHCA2N3634 JANHCA2N3634 Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 140V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCA2N3635 JANHCA2N3635 Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 140V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCA2N3636 JANHCA2N3636 Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 175V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCA2N3637 JANHCA2N3637 Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 175V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCB2N3439 JANHCB2N3439 Microchip Technology 14809-military-qualified-die-chip Description: TRANS NPN 350V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JANHCD2N5154 JANHCD2N5154 Microchip Technology 14809-military-qualified-die-chip Description: TRANS NPN 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANHCC2N3501 JANHCC2N3501 Microchip Technology Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/366
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JANHCC2N5151 JANHCC2N5151 Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANHCD2N5152 JANHCD2N5152 Microchip Technology 14809-military-qualified-die-chip Description: TRANS NPN 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANHCB2N3440 JANHCB2N3440 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANHCB2N2221A JANHCB2N2221A Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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DSPIC33CK64MP102-I/M6 DSPIC33CK64MP102-I/M6 Microchip Technology 70005363b.pdf Description: IC MCU 16BIT 64KB FLASH 28UQFN
Packaging: Tube
Package / Case: 28-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 12x12b; D/A 3x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, QEI, Smart Card, WDT
Supplier Device Package: 28-UQFN (4x4)
Number of I/O: 21
DigiKey Programmable: Not Verified
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DSPIC33CK64MP102-E/M6 DSPIC33CK64MP102-E/M6 Microchip Technology 70005363b.pdf Description: IC MCU 16BIT 64KB FLASH 28UQFN
Packaging: Tube
Package / Case: 28-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 12x12b; D/A 3x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, QEI, Smart Card, WDT
Supplier Device Package: 28-UQFN (4x4)
Grade: Automotive
Number of I/O: 21
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MXL15KP240A/TR MXL15KP240A/TR Microchip Technology 9460-rf01011-m15kp-rev-e-datasheet Description: TVS DIODE 240VWM 388VC CASE 5A
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2N5968 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 220 W
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2N5967 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 220 W
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2N5966 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 220 W
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2N5960 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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2N5957 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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2N5958 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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2N5970 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 85 W
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2N5959 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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CDLL5258D
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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MXLRT100KP78CAe3 77294-mrt100kp-pdf
MXLRT100KP78CAe3
Виробник: Microchip Technology
Description: TVS DIODE 78VWM 153VC CASE 5A
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MXLRT100KP220CAe3 77294-mrt100kp-pdf
MXLRT100KP220CAe3
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 434VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 434V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLRT100KP120CAe3 77294-mrt100kp-pdf
MXLRT100KP120CAe3
Виробник: Microchip Technology
Description: TVS DIODE 120VWM 235VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 235V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXLRT100KP70Ae3 77294-mrt100kp-pdf
MXLRT100KP70Ae3
Виробник: Microchip Technology
Description: TVS DIODE 70VWM 138VC CASE 5A
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MXLRT100KP85Ae3 77294-mrt100kp-pdf
MXLRT100KP85Ae3
Виробник: Microchip Technology
Description: TVS DIODE 85VWM 166VC CASE 5A
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MXLRT100KP200CAe3 77294-mrt100kp-pdf
MXLRT100KP200CAe3
Виробник: Microchip Technology
Description: TVS DIODE 200VWM 392VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 392V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLRT100KP43CA 77294-mrt100kp-pdf
MXLRT100KP43CA
Виробник: Microchip Technology
Description: TVS DIODE 43VWM 84.5VC CASE 5A
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MXLRT100KP64CA 77294-mrt100kp-pdf
MXLRT100KP64CA
Виробник: Microchip Technology
Description: TVS DIODE 64VWM 126VC CASE 5A
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MXLRT100KP250CA 77294-mrt100kp-pdf
MXLRT100KP250CA
Виробник: Microchip Technology
Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXLRT100KP85CA 77294-mrt100kp-pdf
MXLRT100KP85CA
Виробник: Microchip Technology
Description: TVS DIODE 85VWM 166VC CASE 5A
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MXLRT100KP160CAe3 77294-mrt100kp-pdf
MXLRT100KP160CAe3
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 315VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 315V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MXLRT100KP45CAe3 77294-mrt100kp-pdf
MXLRT100KP45CAe3
Виробник: Microchip Technology
Description: TVS DIODE 45VWM 88.5VC CASE 5A
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MXLRT100KP350CA 77294-mrt100kp-pdf
MXLRT100KP350CA
Виробник: Microchip Technology
Description: TVS DIODE 350VWM 690VC CASE 5A
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MXLRT100KP90Ae3 77294-mrt100kp-pdf
MXLRT100KP90Ae3
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 178VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 178V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
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MXLRT100KP90CAe3 77294-mrt100kp-pdf
MXLRT100KP90CAe3
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 178VC CASE 5A
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MXLRT100KP110CA 77294-mrt100kp-pdf
MXLRT100KP110CA
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 216VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 216V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLRT100KP280CA 77294-mrt100kp-pdf
MXLRT100KP280CA
Виробник: Microchip Technology
Description: TVS DIODE 280VWM 552VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 280V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 311V
Voltage - Clamping (Max) @ Ipp: 552V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
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USB5744B/2GX01 USB5744-Data-Sheet-DS00001855J.pdf
USB5744B/2GX01
Виробник: Microchip Technology
Description: IC HUB CTLR USB 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: Serial, SMBus, SPI
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.08V ~ 1.32V, 3V ~ 3.6V
Protocol: USB
Standards: USB 2.0, USB 3.2
Supplier Device Package: 56-VQFN (7x7)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 409 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+481.36 грн
25+385.87 грн
100+372.58 грн
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JANS2N930
JANS2N930
Виробник: Microchip Technology
Description: TRANS NPN 45V 0.03A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Qualification: MIL-PRF-19500/253
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1N4741UR-1
1N4741UR-1
Виробник: Microchip Technology
Description: DIODE ZENER 11V 1W DO213AB
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
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MXSMBG28Ae3 10560-msmb-datasheet
MXSMBG28Ae3
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MASMBG28CAe3 10560-msmb-datasheet
MASMBG28CAe3
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MXLSMBG28A 10560-msmb-datasheet
MXLSMBG28A
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MSMBG28CA 10560-msmb-datasheet
MSMBG28CA
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MSMBG28CAe3 10560-msmb-datasheet
MSMBG28CAe3
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MASMBG28A 10560-msmb-datasheet
MASMBG28A
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MASMBG28Ae3 10560-msmb-datasheet
MASMBG28Ae3
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MXLSMBG28Ae3 10560-msmb-datasheet
MXLSMBG28Ae3
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MXSMBG28CAe3 10560-msmb-datasheet
MXSMBG28CAe3
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MSMBG28A 10560-msmb-datasheet
MSMBG28A
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MXLSMBG28CA 10560-msmb-datasheet
MXLSMBG28CA
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MASMBG28CA 10560-msmb-datasheet
MASMBG28CA
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MSMBG28AE3 10560-msmb-datasheet
MSMBG28AE3
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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MXSMBG28CA 10560-msmb-datasheet
MXSMBG28CA
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC SMBG
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JANHCB2N5002
Виробник: Microchip Technology
Description: TRANS NPN 80V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: Die
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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JANHCC2N6193 14809-military-qualified-die-chip
JANHCC2N6193
Виробник: Microchip Technology
Description: TRANS PNP 100V 5A TO205AD
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-205AD (TO-39)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/561
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JANHCB2N5004
Виробник: Microchip Technology
Description: TRANS NPN 80V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: Die
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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JANHCA2N3634 14809-military-qualified-die-chip
JANHCA2N3634
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCA2N3635 14809-military-qualified-die-chip
JANHCA2N3635
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCA2N3636 14809-military-qualified-die-chip
JANHCA2N3636
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCA2N3637 14809-military-qualified-die-chip
JANHCA2N3637
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANHCB2N3439 14809-military-qualified-die-chip
JANHCB2N3439
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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JANHCD2N5154 14809-military-qualified-die-chip
JANHCD2N5154
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANHCC2N3501
JANHCC2N3501
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/366
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JANHCC2N5151 14809-military-qualified-die-chip
JANHCC2N5151
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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JANHCD2N5152 14809-military-qualified-die-chip
JANHCD2N5152
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANHCB2N3440
JANHCB2N3440
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANHCB2N2221A
JANHCB2N2221A
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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DSPIC33CK64MP102-I/M6 70005363b.pdf
DSPIC33CK64MP102-I/M6
Виробник: Microchip Technology
Description: IC MCU 16BIT 64KB FLASH 28UQFN
Packaging: Tube
Package / Case: 28-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 12x12b; D/A 3x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, QEI, Smart Card, WDT
Supplier Device Package: 28-UQFN (4x4)
Number of I/O: 21
DigiKey Programmable: Not Verified
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DSPIC33CK64MP102-E/M6 70005363b.pdf
DSPIC33CK64MP102-E/M6
Виробник: Microchip Technology
Description: IC MCU 16BIT 64KB FLASH 28UQFN
Packaging: Tube
Package / Case: 28-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 12x12b; D/A 3x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, QEI, Smart Card, WDT
Supplier Device Package: 28-UQFN (4x4)
Grade: Automotive
Number of I/O: 21
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MXL15KP240A/TR 9460-rf01011-m15kp-rev-e-datasheet
MXL15KP240A/TR
Виробник: Microchip Technology
Description: TVS DIODE 240VWM 388VC CASE 5A
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2N5968
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 220 W
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2N5967
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 220 W
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2N5966
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 220 W
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2N5960
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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2N5957
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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2N5958
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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2N5970
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 85 W
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2N5959
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
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