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DSC1101CE1-100.0000T DSC1101CE1-100.0000T Microchip Technology MCHP-S-A0003695894-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC LOW JITTER 100MHZ LVCMO
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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DSC1001CE1-100.0000T Microchip Technology MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 100.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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DSC1101CE1-100.0000 DSC1101CE1-100.0000 Microchip Technology MCHP-S-A0003695894-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC LOW JITTER 100MHZ LVCMO
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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DSC1103CE1-100.0000 Microchip Technology MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC LOW JITTER 100MHZ LVDS
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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DSC1001CE1-100.0000 Microchip Technology MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC XO 100.0000MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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DSC1103CE1-100.0000T Microchip Technology MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC LOW JITTER 100MHZ LVDS
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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MASMCGLCE110Ae3 Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 110VWM 178VC SMCG
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MSMCJLCE110AE3/TR MSMCJLCE110AE3/TR Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 110VWM 178VC SMCJ
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MXSMCGLCE110A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 110VWM 178VC SMCG
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JAN1N2814B Microchip Technology Description: ZENER DIODE
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JANTXV1N2814B Microchip Technology Description: ZENER DIODE
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JANTX1N2814RB Microchip Technology Description: ZENER DIODE
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JAN1N2814RB Microchip Technology Description: ZENER DIODE
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JANTX1N2814B Microchip Technology Description: ZENER DIODE
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JANTXV1N2814RB Microchip Technology Description: ZENER DIODE
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2N4003 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
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24FC16T-E/OT36KVAO 24FC16T-E/OT36KVAO Microchip Technology 20001703M.pdf Description: 16KB I2C EEPROM, 1MHZ 1.7-5.5V,
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LP0701LG-G LP0701LG-G Microchip Technology LP0701-P-Channel-Enhancement-Mode-Lateral-MOSFET-Data-Sheet-20005447A.pdf Description: MOSFET P-CH 16.5V 700MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1.1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 16.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
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MSMLJ8.5CA MSMLJ8.5CA Microchip Technology 10563-msml-datasheet Description: TVS DIODE 8.5VWM 14.4VC DO214AB
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MSMLJ8.5Ae3 MSMLJ8.5Ae3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 8.5VWM 14.4VC DO214AB
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MSMLJ90A MSMLJ90A Microchip Technology 10563-msml-datasheet Description: TVS DIODE 90VWM 146VC DO214AB
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MSMLJ8.0CA MSMLJ8.0CA Microchip Technology 10563-msml-datasheet Description: TVS DIODE 8VWM 13.6VC DO214AB
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MSMLJ90Ae3 MSMLJ90Ae3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 90VWM 146VC DO214AB
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MSMLJ75CA MSMLJ75CA Microchip Technology 10563-msml-datasheet Description: TVS DIODE 75VWM 121VC DO214AB
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MSMLJ9.0CA MSMLJ9.0CA Microchip Technology 10563-msml-datasheet Description: TVS DIODE 9VWM 15.4VC DO214AB
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MSMLJ85AE3 MSMLJ85AE3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 85VWM 137VC DO214AB
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ATTINY24V-10SSU ATTINY24V-10SSU Microchip Technology 8006S.pdf description Description: IC MCU 8BIT 2KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 2KB (1K x 16)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: USI
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Verified
на замовлення 1614 шт:
термін постачання 21-31 дні (днів)
3+149.72 грн
25+131.53 грн
100+119.26 грн
Мінімальне замовлення: 3
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JANS1N5711-1/TR JANS1N5711-1/TR Microchip Technology Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: MIL-PRF-19500/444
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DSC6083CI2A-032K800 DSC6083CI2A-032K800 Microchip Technology DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf Description: MEMS OSC XO 32.8000KHZ CMOS SMD
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
5+74.06 грн
Мінімальне замовлення: 5
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PIC32MK1024GPK100T-E/PT PIC32MK1024GPK100T-E/PT Microchip Technology PIC32MK-GPK-MCM-with-CAN-FD-Family-DataSheet-DS60001519E.pdf Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b; D/A 3x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
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PIC32MK1024GPK100T-E/PT PIC32MK1024GPK100T-E/PT Microchip Technology PIC32MK-GPK-MCM-with-CAN-FD-Family-DataSheet-DS60001519E.pdf Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b; D/A 3x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
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2N5741 Microchip Technology Description: POWER BJT
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AT91SAM7SE32B-CU AT91SAM7SE32B-CU Microchip Technology 6222s.pdf Description: IC MCU 16/32B 32KB FLSH 144LFBGA
Packaging: Tray
Package / Case: 144-LFBGA
Mounting Type: Surface Mount
Speed: 55MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 8x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 1.95V
Connectivity: EBI/EMI, I2C, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 144-LFBGA (10x10)
Part Status: Active
Number of I/O: 88
DigiKey Programmable: Not Verified
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
1+792.08 грн
25+693.54 грн
100+627.77 грн
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VXM1-1B1-24M5750000TR VXM1-1B1-24M5750000TR Microchip Technology Description: VXM1-1B1-24M5750000TR
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VXM1-1B1-24M5750000 VXM1-1B1-24M5750000 Microchip Technology Description: VXM1-1B1-24M5750000
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JANSP2N2907AUB JANSP2N2907AUB Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANSG2N2907AUBC JANSG2N2907AUBC Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANTX2N2907AP JANTX2N2907AP Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANSM2N2907AUA JANSM2N2907AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JAN2N2907AUBP/TR JAN2N2907AUBP/TR Microchip Technology 8896-lds-0059-pdf.pdf Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANTXVR2N2907AUB JANTXVR2N2907AUB Microchip Technology Description: RH SMALL-SIGNAL BJT _ UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANSD2N2907AL JANSD2N2907AL Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANKCDR2N2907A JANKCDR2N2907A Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANTXV2N2907AP JANTXV2N2907AP Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANSL2N2907AUA JANSL2N2907AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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MSR2N2907AL MSR2N2907AL Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANSP2N2907AUA Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANTXV2N2907AUBC JANTXV2N2907AUBC Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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DSPIC33CK256MP608T-I/PT DSPIC33CK256MP608T-I/PT Microchip Technology dsPIC33CK512MP608-Family-Data-Sheet-DS70005452B.pdf Description: IC MCU 16BIT 256KB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 100MIPs
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 24x12b SAR; D/A 6x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, Motor Control, POR, PWM, QEI, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Active
Number of I/O: 69
DigiKey Programmable: Not Verified
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DSPIC33CK256MP608T-I/PT DSPIC33CK256MP608T-I/PT Microchip Technology dsPIC33CK512MP608-Family-Data-Sheet-DS70005452B.pdf Description: IC MCU 16BIT 256KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 100MIPs
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 24x12b SAR; D/A 6x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, Motor Control, POR, PWM, QEI, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Active
Number of I/O: 69
DigiKey Programmable: Not Verified
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JANS1N5308-1 JANS1N5308-1 Microchip Technology Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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JANTXV1N5308-1/TR JANTXV1N5308-1/TR Microchip Technology Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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JAN1N5308UR-1/TR JAN1N5308UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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JANTX1N5308-1/TR JANTX1N5308-1/TR Microchip Technology Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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JANS1N5308UR-1 JANS1N5308UR-1 Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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1N5308/TR 1N5308/TR Microchip Technology Description: DIODE CUR REG 100V 2.97MA 475MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 475mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
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1N5308UR-1/TR 1N5308UR-1/TR Microchip Technology Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
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JANTX1N5308UR-1/TR JANTX1N5308UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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JANS1N5308UR-1/TR JANS1N5308UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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JANS1N5308-1/TR JANS1N5308-1/TR Microchip Technology Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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DSC1101CE1-100.0000T MCHP-S-A0003695894-1.pdf?t.download=true&u=5oefqw
DSC1101CE1-100.0000T
Виробник: Microchip Technology
Description: MEMS OSC LOW JITTER 100MHZ LVCMO
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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DSC1001CE1-100.0000T MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw
Виробник: Microchip Technology
Description: MEMS OSC XO 100.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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DSC1101CE1-100.0000 MCHP-S-A0003695894-1.pdf?t.download=true&u=5oefqw
DSC1101CE1-100.0000
Виробник: Microchip Technology
Description: MEMS OSC LOW JITTER 100MHZ LVCMO
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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DSC1103CE1-100.0000 MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw
Виробник: Microchip Technology
Description: MEMS OSC LOW JITTER 100MHZ LVDS
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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DSC1001CE1-100.0000 MCHP-S-A0003587227-1.pdf?t.download=true&u=5oefqw
Виробник: Microchip Technology
Description: MEMS OSC XO 100.0000MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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DSC1103CE1-100.0000T MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw
Виробник: Microchip Technology
Description: MEMS OSC LOW JITTER 100MHZ LVDS
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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MASMCGLCE110Ae3 10562-msmclce-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 178VC SMCG
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MSMCJLCE110AE3/TR 10562-msmclce-datasheet
MSMCJLCE110AE3/TR
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 178VC SMCJ
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MXSMCGLCE110A 10562-msmclce-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 178VC SMCG
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JAN1N2814B
Виробник: Microchip Technology
Description: ZENER DIODE
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JANTXV1N2814B
Виробник: Microchip Technology
Description: ZENER DIODE
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JANTX1N2814RB
Виробник: Microchip Technology
Description: ZENER DIODE
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JAN1N2814RB
Виробник: Microchip Technology
Description: ZENER DIODE
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JANTX1N2814B
Виробник: Microchip Technology
Description: ZENER DIODE
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JANTXV1N2814RB
Виробник: Microchip Technology
Description: ZENER DIODE
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2N4003
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
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24FC16T-E/OT36KVAO 20001703M.pdf
24FC16T-E/OT36KVAO
Виробник: Microchip Technology
Description: 16KB I2C EEPROM, 1MHZ 1.7-5.5V,
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LP0701LG-G LP0701-P-Channel-Enhancement-Mode-Lateral-MOSFET-Data-Sheet-20005447A.pdf
LP0701LG-G
Виробник: Microchip Technology
Description: MOSFET P-CH 16.5V 700MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1.1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 16.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
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MSMLJ8.5CA 10563-msml-datasheet
MSMLJ8.5CA
Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
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MSMLJ8.5Ae3 10563-msml-datasheet
MSMLJ8.5Ae3
Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
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MSMLJ90A 10563-msml-datasheet
MSMLJ90A
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
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MSMLJ8.0CA 10563-msml-datasheet
MSMLJ8.0CA
Виробник: Microchip Technology
Description: TVS DIODE 8VWM 13.6VC DO214AB
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MSMLJ90Ae3 10563-msml-datasheet
MSMLJ90Ae3
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
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MSMLJ75CA 10563-msml-datasheet
MSMLJ75CA
Виробник: Microchip Technology
Description: TVS DIODE 75VWM 121VC DO214AB
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MSMLJ9.0CA 10563-msml-datasheet
MSMLJ9.0CA
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.4VC DO214AB
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MSMLJ85AE3 10563-msml-datasheet
MSMLJ85AE3
Виробник: Microchip Technology
Description: TVS DIODE 85VWM 137VC DO214AB
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ATTINY24V-10SSU description 8006S.pdf
ATTINY24V-10SSU
Виробник: Microchip Technology
Description: IC MCU 8BIT 2KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 2KB (1K x 16)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: USI
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Verified
на замовлення 1614 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.72 грн
25+131.53 грн
100+119.26 грн
Мінімальне замовлення: 3
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JANS1N5711-1/TR
JANS1N5711-1/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: MIL-PRF-19500/444
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DSC6083CI2A-032K800 DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf
DSC6083CI2A-032K800
Виробник: Microchip Technology
Description: MEMS OSC XO 32.8000KHZ CMOS SMD
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+74.06 грн
Мінімальне замовлення: 5
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PIC32MK1024GPK100T-E/PT PIC32MK-GPK-MCM-with-CAN-FD-Family-DataSheet-DS60001519E.pdf
PIC32MK1024GPK100T-E/PT
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b; D/A 3x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
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PIC32MK1024GPK100T-E/PT PIC32MK-GPK-MCM-with-CAN-FD-Family-DataSheet-DS60001519E.pdf
PIC32MK1024GPK100T-E/PT
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b; D/A 3x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
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2N5741
Виробник: Microchip Technology
Description: POWER BJT
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AT91SAM7SE32B-CU 6222s.pdf
AT91SAM7SE32B-CU
Виробник: Microchip Technology
Description: IC MCU 16/32B 32KB FLSH 144LFBGA
Packaging: Tray
Package / Case: 144-LFBGA
Mounting Type: Surface Mount
Speed: 55MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 8x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 1.95V
Connectivity: EBI/EMI, I2C, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 144-LFBGA (10x10)
Part Status: Active
Number of I/O: 88
DigiKey Programmable: Not Verified
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+792.08 грн
25+693.54 грн
100+627.77 грн
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VXM1-1B1-24M5750000TR
VXM1-1B1-24M5750000TR
Виробник: Microchip Technology
Description: VXM1-1B1-24M5750000TR
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VXM1-1B1-24M5750000
VXM1-1B1-24M5750000
Виробник: Microchip Technology
Description: VXM1-1B1-24M5750000
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JANSP2N2907AUB
JANSP2N2907AUB
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANSG2N2907AUBC
JANSG2N2907AUBC
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANTX2N2907AP
JANTX2N2907AP
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANSM2N2907AUA
JANSM2N2907AUA
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JAN2N2907AUBP/TR 8896-lds-0059-pdf.pdf
JAN2N2907AUBP/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANTXVR2N2907AUB
JANTXVR2N2907AUB
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT _ UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANSD2N2907AL
JANSD2N2907AL
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANKCDR2N2907A
JANKCDR2N2907A
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANTXV2N2907AP
JANTXV2N2907AP
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANSL2N2907AUA
JANSL2N2907AUA
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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MSR2N2907AL
MSR2N2907AL
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANSP2N2907AUA
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANTXV2N2907AUBC
JANTXV2N2907AUBC
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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DSPIC33CK256MP608T-I/PT dsPIC33CK512MP608-Family-Data-Sheet-DS70005452B.pdf
DSPIC33CK256MP608T-I/PT
Виробник: Microchip Technology
Description: IC MCU 16BIT 256KB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 100MIPs
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 24x12b SAR; D/A 6x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, Motor Control, POR, PWM, QEI, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Active
Number of I/O: 69
DigiKey Programmable: Not Verified
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DSPIC33CK256MP608T-I/PT dsPIC33CK512MP608-Family-Data-Sheet-DS70005452B.pdf
DSPIC33CK256MP608T-I/PT
Виробник: Microchip Technology
Description: IC MCU 16BIT 256KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 100MIPs
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 24x12b SAR; D/A 6x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, Motor Control, POR, PWM, QEI, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Active
Number of I/O: 69
DigiKey Programmable: Not Verified
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JANS1N5308-1
JANS1N5308-1
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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JANTXV1N5308-1/TR
JANTXV1N5308-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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JAN1N5308UR-1/TR 123508-lds-0160-pdf
JAN1N5308UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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JANTX1N5308-1/TR
JANTX1N5308-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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JANS1N5308UR-1 123508-lds-0160-pdf
JANS1N5308UR-1
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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1N5308/TR
1N5308/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 475MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 475mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
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1N5308UR-1/TR
1N5308UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
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JANTX1N5308UR-1/TR 123508-lds-0160-pdf
JANTX1N5308UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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JANS1N5308UR-1/TR 123508-lds-0160-pdf
JANS1N5308UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
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JANS1N5308-1/TR
JANS1N5308-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Qualification: MIL-PRF-19500/463
товару немає в наявності
В кошику  од. на суму  грн.
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