Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (354031) > Сторінка 1620 з 5901
| Фото | Назва | Виробник | Інформація |
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| JANTXV1N4989DUS | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANS1N4989US | Microchip Technology |
 Description: ZENER DIODE |
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| 1N4989CUS | Microchip Technology | Description: VOLTAGE REGULATOR |
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1N5804URS | Microchip Technology |
Description: DIODE GEN PURP 110V 1A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 110 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
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| MXPLAD30KP22CA | Microchip Technology |
Description: TVS DIODE 22VWM 36.4VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 822A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 36.4V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Part Status: Active |
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| MXPLAD30KP33CAe3 | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 564A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Part Status: Active |
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| MXPLAD30KP43CAe3 | Microchip Technology |
Description: TVS DIODE 43VWM 69.4VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 432A Voltage - Reverse Standoff (Typ): 43V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Part Status: Active |
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| MXPLAD30KP24Ae3 | Microchip Technology |
Description: TVS DIODE 24VWM 39.8VC PLAD |
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MXPLAD30KP180CAe3 | Microchip Technology |
Description: TVS DIODE 180VWM 291VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 104A Voltage - Reverse Standoff (Typ): 180V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 200V Voltage - Clamping (Max) @ Ipp: 291V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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| MXPLAD30KP33CA | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 564A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Part Status: Active |
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| MXPLAD30KP200A | Microchip Technology |
Description: TVS DIODE 200VWM 322VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 94A Voltage - Reverse Standoff (Typ): 200V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 222V Voltage - Clamping (Max) @ Ipp: 322V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Part Status: Active |
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| MXPLAD30KP36A | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC PLAD |
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| MXPLAD30KP54CA | Microchip Technology |
Description: TVS DIODE 54VWM 87.1VC PLAD |
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| MXPLAD30KP54Ae3 | Microchip Technology |
Description: TVS DIODE 54VWM 87.1VC PLAD |
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CDLL6344/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 155 Ohms Supplier Device Package: DO-213AB Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 52 V |
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| DSC1102BI2-155.2500 | Microchip Technology |
Description: MEMS OSC XO 155.2500MHZ LVPECL |
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| DSC1102BI2-155.2500T | Microchip Technology |
Description: MEMS OSC XO 155.2500MHZ LVPECL |
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M15KP51AE3/TR | Microchip Technology |
Description: TVS 51V 5% 15000W UNI Packaging: Tape & Reel (TR) Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 181A Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 82.8V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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M15KP51A/TR | Microchip Technology |
Description: TVS 51V 5% 15000W UNI Packaging: Tape & Reel (TR) Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 181A Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 82.8V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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| R3205 | Microchip Technology | Description: STD RECTIFIER |
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AT32UC3A0256-ALUT | Microchip Technology |
Description: IC MCU 32BIT 256KB FLASH 144LQFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 66MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: AVR Data Converters: A/D 8x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: EBI/EMI, Ethernet, I2C, SPI, SSC, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Part Status: Active Number of I/O: 109 DigiKey Programmable: Not Verified |
на замовлення 161 шт: термін постачання 21-31 дні (днів) |
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| ATA6020N-020-TKQW | Microchip Technology | Description: TRANSCEIVER |
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1N4104 | Microchip Technology |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-7 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V |
на замовлення 354 шт: термін постачання 21-31 дні (днів) |
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AT24MAC602-XHM-T | Microchip Technology |
Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 550 ns Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
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AT24MAC602-XHM-T | Microchip Technology |
Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 550 ns Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
на замовлення 3640 шт: термін постачання 21-31 дні (днів) |
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AT24MAC602-XHM-B | Microchip Technology |
Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 550 ns Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
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ASBK-014 | Microchip Technology |
Description: DEVICE PROGRAMMING KIT Packaging: Bulk Function: Gate Driver Type: Power Management Supplied Contents: Board(s), Cable(s) |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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ATSAM4CMP32CB-AUT | Microchip Technology |
Description: TQFP, GREEN, IND, CRYPTO, MRLB, |
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ATSAM4CMP32CB-AUTR | Microchip Technology |
Description: TQFP, GREEN, IND, CRYPTO, MRLB, |
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JAN1N4249 | Microchip Technology |
Description: DIODE GEN PURP 1KV 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
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1N4249 | Microchip Technology |
Description: DIODE GEN PURP 1KV 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
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JAN1N4249/TR | Microchip Technology |
Description: DIODE GEN PURP 1KV 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
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| 1N4249US | Microchip Technology |
Description: DIODE GEN PURP 1KV 1A MELF-1 Packaging: Bulk Package / Case: SQ-MELF Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: MELF-1 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
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JANTXV1N4249/TR | Microchip Technology |
Description: DIODE GEN PURP 1KV 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
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1N4249/TR | Microchip Technology |
Description: DIODE GEN PURP 1KV 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
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EMC1412-1-ACZL-TR | Microchip Technology |
Description: SENSOR DIGITAL -40C-125C 8TSSOP Packaging: Cut Tape (CT) Features: One-Shot, Output Switch, Programmable Limit, Standby Mode Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: SMBus Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Sensor Type: Digital, Local/Remote Resolution: 11 b Supplier Device Package: 8-TSSOP Test Condition: -5°C ~ 100°C (-40°C ~ 125°C) Accuracy - Highest (Lowest): ±1°C (±2°C) Sensing Temperature - Local: -40°C ~ 125°C Sensing Temperature - Remote: -64°C ~ 191°C |
на замовлення 6958 шт: термін постачання 21-31 дні (днів) |
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1N4500E3/TR | Microchip Technology |
Description: DIODE GP REV 80V 300MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 300mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA Current - Reverse Leakage @ Vr: 100 nA @ 75 V |
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1N4531UR-1 | Microchip Technology | Description: DIODE GEN PURP 75V 125MA DO213AA |
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1N4500E3 | Microchip Technology |
Description: DIODE GEN PURP 80V 300MA DO35 |
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| 1N4529R | Microchip Technology |
Description: DIODE GEN PURP 1KV 40A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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| 1N4596R | Microchip Technology | Description: DIODE GP REV 1.4KV 150A DO205AA |
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| 1N4593R | Microchip Technology | Description: DIODE GP REV 800V 150A DO205AA |
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| 1N4590 | Microchip Technology | Description: DIODE GEN PURP 400V 150A DO205AA |
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| 1N4593 | Microchip Technology | Description: DIODE GEN PURP 800V 150A DO205AA |
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| 1N4591 | Microchip Technology | Description: DIODE GEN PURP 500V 150A DO205AA |
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1N459/TR | Microchip Technology |
Description: DIODE GP REV 200V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
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| 1N4595R | Microchip Technology | Description: DIODE GP REV 1.2KV 150A DO205AA |
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| 1N4592R | Microchip Technology | Description: DIODE GP REV 600V 150A DO205AA |
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| 1N4592TS | Microchip Technology | Description: DIODE GEN PURP 600V 150A DO205AA |
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| 1N4591R | Microchip Technology | Description: DIODE GP REV 500V 150A DO205AA |
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| 1N4596 | Microchip Technology | Description: DIODE GP 1.4KV 150A DO205AA |
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| 1N4590R | Microchip Technology | Description: DIODE GP REV 400V 150A DO205AA |
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| 1N4595 | Microchip Technology | Description: DIODE GP 1.2KV 150A DO205AA |
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| 1N459AUR | Microchip Technology |
Description: DIODE GP 200V 150MA DO213AA Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
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1N459A/TR | Microchip Technology |
Description: DIODE GP REV 200V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
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| 1N4592 | Microchip Technology | Description: DIODE GEN PURP 600V 150A DO205AA |
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2N2608 | Microchip Technology |
Description: JFET P-CH 30V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-18 (TO-206AA) Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V |
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MQ2N2608UB | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Grade: Military Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V Qualification: MIL-PRF-19500/295 |
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MQ2N2608UB/TR | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Grade: Military Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V Qualification: MIL-PRF-19500/295 |
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2N2608UB/TR | Microchip Technology |
Description: JFET P-CH 30V UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: UB Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V |
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| 1N5804URS |
Виробник: Microchip Technology
Description: DIODE GEN PURP 110V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 110 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE GEN PURP 110V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 110 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товар відсутній
| MXPLAD30KP22CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 36.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 822A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 36.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 22VWM 36.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 822A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 36.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| MXPLAD30KP33CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 564A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 33VWM 53.3VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 564A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| MXPLAD30KP43CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 432A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 43VWM 69.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 432A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| MXPLAD30KP24Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 39.8VC PLAD
Description: TVS DIODE 24VWM 39.8VC PLAD
товар відсутній
| MXPLAD30KP180CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 180VWM 291VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 104A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 200V
Voltage - Clamping (Max) @ Ipp: 291V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 180VWM 291VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 104A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 200V
Voltage - Clamping (Max) @ Ipp: 291V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
| MXPLAD30KP33CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 564A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 33VWM 53.3VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 564A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| MXPLAD30KP200A |
|
Виробник: Microchip Technology
Description: TVS DIODE 200VWM 322VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 94A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 200VWM 322VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 94A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| MXPLAD30KP36A |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC PLAD
Description: TVS DIODE 36VWM 58.1VC PLAD
товар відсутній
| MXPLAD30KP54CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC PLAD
Description: TVS DIODE 54VWM 87.1VC PLAD
товар відсутній
| MXPLAD30KP54Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC PLAD
Description: TVS DIODE 54VWM 87.1VC PLAD
товар відсутній
| CDLL6344/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 155 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 52 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 155 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 52 V
товар відсутній
| DSC1102BI2-155.2500 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 155.2500MHZ LVPECL
Description: MEMS OSC XO 155.2500MHZ LVPECL
товар відсутній
| DSC1102BI2-155.2500T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 155.2500MHZ LVPECL
Description: MEMS OSC XO 155.2500MHZ LVPECL
товар відсутній
| M15KP51AE3/TR |
Виробник: Microchip Technology
Description: TVS 51V 5% 15000W UNI
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS 51V 5% 15000W UNI
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
| M15KP51A/TR |
Виробник: Microchip Technology
Description: TVS 51V 5% 15000W UNI
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS 51V 5% 15000W UNI
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
| AT32UC3A0256-ALUT |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: EBI/EMI, Ethernet, I2C, SPI, SSC, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 109
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: EBI/EMI, Ethernet, I2C, SPI, SSC, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 109
DigiKey Programmable: Not Verified
на замовлення 161 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 960.88 грн |
| 25+ | 841.94 грн |
| 100+ | 761.96 грн |
| 1N4104 |
|
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
на замовлення 354 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 166.94 грн |
| 100+ | 149.84 грн |
| AT24MAC602-XHM-T |
|
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
товар відсутній
| AT24MAC602-XHM-T |
|
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
на замовлення 3640 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.43 грн |
| 25+ | 25.84 грн |
| 100+ | 24.44 грн |
| AT24MAC602-XHM-B |
|
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
товар відсутній
| ASBK-014 |
|
Виробник: Microchip Technology
Description: DEVICE PROGRAMMING KIT
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s), Cable(s)
Description: DEVICE PROGRAMMING KIT
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s), Cable(s)
на замовлення 48 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 15639.73 грн |
| ATSAM4CMP32CB-AUT |
|
Виробник: Microchip Technology
Description: TQFP, GREEN, IND, CRYPTO, MRLB,
Description: TQFP, GREEN, IND, CRYPTO, MRLB,
товар відсутній
| ATSAM4CMP32CB-AUTR |
|
Виробник: Microchip Technology
Description: TQFP, GREEN, IND, CRYPTO, MRLB,
Description: TQFP, GREEN, IND, CRYPTO, MRLB,
товар відсутній
| JAN1N4249 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
| 1N4249 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
| JAN1N4249/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
товар відсутній
| 1N4249US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A MELF-1
Packaging: Bulk
Package / Case: SQ-MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF-1
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A MELF-1
Packaging: Bulk
Package / Case: SQ-MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF-1
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
| JANTXV1N4249/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
товар відсутній
| 1N4249/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
товар відсутній
| EMC1412-1-ACZL-TR |
|
Виробник: Microchip Technology
Description: SENSOR DIGITAL -40C-125C 8TSSOP
Packaging: Cut Tape (CT)
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Resolution: 11 b
Supplier Device Package: 8-TSSOP
Test Condition: -5°C ~ 100°C (-40°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±2°C)
Sensing Temperature - Local: -40°C ~ 125°C
Sensing Temperature - Remote: -64°C ~ 191°C
Description: SENSOR DIGITAL -40C-125C 8TSSOP
Packaging: Cut Tape (CT)
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Resolution: 11 b
Supplier Device Package: 8-TSSOP
Test Condition: -5°C ~ 100°C (-40°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±2°C)
Sensing Temperature - Local: -40°C ~ 125°C
Sensing Temperature - Remote: -64°C ~ 191°C
на замовлення 6958 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.92 грн |
| 25+ | 49.48 грн |
| 100+ | 48.3 грн |
| 1N4500E3/TR |
|
Виробник: Microchip Technology
Description: DIODE GP REV 80V 300MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Description: DIODE GP REV 80V 300MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
товар відсутній
| 1N4531UR-1 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 125MA DO213AA
Description: DIODE GEN PURP 75V 125MA DO213AA
товар відсутній
| 1N4529R |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
| 1N459/TR |
|
Виробник: Microchip Technology
Description: DIODE GP REV 200V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GP REV 200V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
| 1N4592TS |
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 150A DO205AA
Description: DIODE GEN PURP 600V 150A DO205AA
товар відсутній
| 1N459AUR |
|
Виробник: Microchip Technology
Description: DIODE GP 200V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GP 200V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
| 1N459A/TR |
|
Виробник: Microchip Technology
Description: DIODE GP REV 200V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GP REV 200V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
| 2N2608 |
|
Виробник: Microchip Technology
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
товар відсутній
| MQ2N2608UB |
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Qualification: MIL-PRF-19500/295
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Qualification: MIL-PRF-19500/295
товар відсутній
| MQ2N2608UB/TR |
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Qualification: MIL-PRF-19500/295
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Qualification: MIL-PRF-19500/295
товар відсутній
| 2N2608UB/TR |
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
товар відсутній