Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (359173) > Сторінка 1620 з 5987
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||
---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
DSC-PROG-3225 | Microchip Technology |
![]() Packaging: Bulk For Use With/Related Products: Oscillators Accessory Type: Socket Card |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
|
||||||
![]() |
DSC-PROG-2520 | Microchip Technology |
![]() Packaging: Bulk For Use With/Related Products: Oscillators Accessory Type: Socket Card |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
||||||
![]() |
DSC-PROG-5032 | Microchip Technology |
![]() Packaging: Bulk For Use With/Related Products: Oscillators Accessory Type: Socket Card |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||
|
MAP4KE180CA | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
MP4KE180CAe3 | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
AT30TS750A-SS8M-B | Microchip Technology |
![]() Packaging: Tube Features: EEPROM, One-Shot, Output Switch, Programmable Limit, Programmable Resolution, Shutdown Mode Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: I2C/SMBus Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.7V ~ 5.5V Sensor Type: Digital, Local Resolution: 11 b Supplier Device Package: 8-SOIC Test Condition: 0°C ~ 85°C (-40°C ~ 125°C) Accuracy - Highest (Lowest): ±1°C (±3°C) Sensing Temperature - Local: -55°C ~ 125°C |
на замовлення 541 шт: термін постачання 21-31 дні (днів) |
|
||||||
24AA256SC-I/WF16K | Microchip Technology |
![]() Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: Die Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
![]() |
MIC5317-3.0YD5-TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 39 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: TSOT-23-5 Voltage - Output (Min/Fixed): 3V Control Features: Enable PSRR: 80dB ~ 65dB (1kHz ~ 10kHz) Voltage Dropout (Max): 0.31V @ 150mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
MIC5317-3.0YD5-TR | Microchip Technology |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 39 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: TSOT-23-5 Voltage - Output (Min/Fixed): 3V Control Features: Enable PSRR: 80dB ~ 65dB (1kHz ~ 10kHz) Voltage Dropout (Max): 0.31V @ 150mA Protection Features: Over Current, Over Temperature |
на замовлення 4426 шт: термін постачання 21-31 дні (днів) |
|
||||||
![]() |
MIC5392-PMYMT-TR | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
MIC5392-PMYMT-TR | Microchip Technology |
![]() |
на замовлення 4995 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
|
JAN1N4961US | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JAN1N4961CUS | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JAN1N4961DUS | Microchip Technology |
![]() Packaging: Bulk Tolerance: ±1% Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 3 Ohms Supplier Device Package: D-5B Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V Qualification: MIL-PRF-19500/356 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANTXV1N4961US | Microchip Technology |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 3 Ohms Supplier Device Package: D-5B Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V Qualification: MIL-PRF-19500/356 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANTX1N4961US | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANTX1N4961 | Microchip Technology |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 3 Ohms Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V Qualification: MIL-PRF-19500/356 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
1214GN-180LV | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
1214GN-600VHE | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
0912GN-650V | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
1012GN-800V | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
0912GN-500LV | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
MDSGN-750ELMV | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
1214GN-400LV | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
0912GN-300V | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
0912GN-100LV | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JAN1N5809US/TR | Microchip Technology |
Description: DIODE GP 100V 3A SQ-MELF B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANTX1N5809US/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 3A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANTXV1N5809US/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 3A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANTXV1N5809/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 65pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
JANHCE1N5809 | Microchip Technology |
Description: DIODE GEN PURP 100V 3A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
JANS1N5809URS | Microchip Technology |
Description: DIODE GEN PURP 100V 6A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANTX1N5809/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANS1N5809US | Microchip Technology |
Description: DIODE GEN PURP 100V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANS1N5809US/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 3A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JAN1N5809/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
JANKCE1N5809 | Microchip Technology | Description: DIODE GEN PURP 100V 3A DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
![]() |
JANS1N5809/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
1N5809US/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 3A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
1N5809URS | Microchip Technology |
Description: DIODE GP 100V 3A SQ-MELF B Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
1N5809E3 | Microchip Technology |
Description: DIODE GEN PURP 100V 6A B AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
1N5809E3/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
DSPIC33FJ128GP804T-I/PT | Microchip Technology |
![]() Packaging: Cut Tape (CT) Package / Case: 44-TQFP Mounting Type: Surface Mount Speed: 40 MIPs Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: dsPIC Data Converters: A/D 13x10b/12b; D/A 2x16b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DCI, DMA, I2S, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Part Status: Active Number of I/O: 35 DigiKey Programmable: Not Verified |
на замовлення 3858 шт: термін постачання 21-31 дні (днів) |
|
||||||
![]() |
PIC16LF19185T-I/MV | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
PIC16LF19185T-I/MV | Microchip Technology |
![]() |
на замовлення 169 шт: термін постачання 21-31 дні (днів) |
|
||||||
![]() |
PIC16F19185T-I/MV | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
PIC16F19185T-I/MV | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
PIC16LF19185T-I/PT | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
PIC16LF19185T-I/PT | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
PIC16LF19185-E/PT | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
PIC16F19185-E/PT | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
PIC16LF19185-I/PT | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
JANTX1N5189/TR | Microchip Technology |
Description: DIODE STANDARD 500V 3A B Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 500 V Qualification: MIL-PRF-19500/424 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
JANTX1N5189 | Microchip Technology |
Description: DIODE STANDARD 500V 3A B Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 500 V Qualification: MIL-PRF-19500/424 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
![]() |
PD-9501G-SFP/AC-EU | Microchip Technology |
![]() |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
|
||||||
![]() |
PD-9606G/ACDC/M-EU | Microchip Technology |
![]() Packaging: Bulk Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm) Voltage - Output: 57V Mounting Type: Rack Mount Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10/100/1000 Mbps Approval Agency: CE Power (Watts) - Per Port: 95W Compliance: IEEE802.3af, IEEE802.3at Current - Output: 1.67 A Number of Ports: 6 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||
PD-9601G/AC-EU | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
![]() |
PD-9501GR/SP/AC-EU | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
PD-9606GC/AC-EU | Microchip Technology |
![]() Packaging: Bulk Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm) Voltage - Output: 55V Mounting Type: Rack Mount Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10/100/1000 Mbps Approval Agency: CE Power (Watts) - Per Port: 90W Compliance: IEEE802.3bt Current - Output: 1.64 A Number of Ports: 6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
PD-9612GC/AC-EU | Microchip Technology |
![]() |
товару немає в наявності |
В кошику од. на суму грн. |
DSC-PROG-3225 |
![]() |
Виробник: Microchip Technology
Description: 3225 SOCKET CARD WITH 10 BLANK D
Packaging: Bulk
For Use With/Related Products: Oscillators
Accessory Type: Socket Card
Description: 3225 SOCKET CARD WITH 10 BLANK D
Packaging: Bulk
For Use With/Related Products: Oscillators
Accessory Type: Socket Card
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4626.99 грн |
DSC-PROG-2520 |
![]() |
Виробник: Microchip Technology
Description: 2520 SOCKET CARD WITH 10 BLANK D
Packaging: Bulk
For Use With/Related Products: Oscillators
Accessory Type: Socket Card
Description: 2520 SOCKET CARD WITH 10 BLANK D
Packaging: Bulk
For Use With/Related Products: Oscillators
Accessory Type: Socket Card
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4626.99 грн |
DSC-PROG-5032 |
![]() |
Виробник: Microchip Technology
Description: 5032 SOCKET CARD WITH 10 BLANK D
Packaging: Bulk
For Use With/Related Products: Oscillators
Accessory Type: Socket Card
Description: 5032 SOCKET CARD WITH 10 BLANK D
Packaging: Bulk
For Use With/Related Products: Oscillators
Accessory Type: Socket Card
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4626.99 грн |
MAP4KE180CA |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 154VWM 246VC DO204AL
Description: TVS DIODE 154VWM 246VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
MP4KE180CAe3 |
![]() |
Виробник: Microchip Technology
Description: TVS DIODE 154VWM 246VC DO204AL
Description: TVS DIODE 154VWM 246VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
AT30TS750A-SS8M-B |
![]() |
Виробник: Microchip Technology
Description: SENSOR DIGITAL -55C-125C 8SOIC
Packaging: Tube
Features: EEPROM, One-Shot, Output Switch, Programmable Limit, Programmable Resolution, Shutdown Mode
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.7V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 11 b
Supplier Device Package: 8-SOIC
Test Condition: 0°C ~ 85°C (-40°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±3°C)
Sensing Temperature - Local: -55°C ~ 125°C
Description: SENSOR DIGITAL -55C-125C 8SOIC
Packaging: Tube
Features: EEPROM, One-Shot, Output Switch, Programmable Limit, Programmable Resolution, Shutdown Mode
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.7V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 11 b
Supplier Device Package: 8-SOIC
Test Condition: 0°C ~ 85°C (-40°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±3°C)
Sensing Temperature - Local: -55°C ~ 125°C
на замовлення 541 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 113.23 грн |
25+ | 91.31 грн |
100+ | 87.43 грн |
24AA256SC-I/WF16K |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 256KBIT I2C 400KHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT I2C 400KHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
MIC5317-3.0YD5-TR |
![]() |
Виробник: Microchip Technology
Description: IC REG LINEAR 3V 150MA TSOT-23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 39 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: TSOT-23-5
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 80dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3V 150MA TSOT-23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 39 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: TSOT-23-5
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 80dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
MIC5317-3.0YD5-TR |
![]() |
Виробник: Microchip Technology
Description: IC REG LINEAR 3V 150MA TSOT-23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 39 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: TSOT-23-5
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 80dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3V 150MA TSOT-23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 39 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: TSOT-23-5
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 80dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current, Over Temperature
на замовлення 4426 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
17+ | 19.27 грн |
25+ | 15.56 грн |
100+ | 14.07 грн |
MIC5392-PMYMT-TR |
![]() |
Виробник: Microchip Technology
Description: IC REG LINEAR 2.8V/3V 6TDFN
Description: IC REG LINEAR 2.8V/3V 6TDFN
товару немає в наявності
В кошику
од. на суму грн.
MIC5392-PMYMT-TR |
![]() |
Виробник: Microchip Technology
Description: IC REG LINEAR 2.8V/3V 6TDFN
Description: IC REG LINEAR 2.8V/3V 6TDFN
на замовлення 4995 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
JAN1N4961US |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 13V 5W D5B
Description: DIODE ZENER 13V 5W D5B
товару немає в наявності
В кошику
од. на суму грн.
JAN1N4961CUS |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 13V 5W D5B
Description: DIODE ZENER 13V 5W D5B
товару немає в наявності
В кошику
од. на суму грн.
JAN1N4961DUS |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 13V 5W D5B
Packaging: Bulk
Tolerance: ±1%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
Qualification: MIL-PRF-19500/356
Description: DIODE ZENER 13V 5W D5B
Packaging: Bulk
Tolerance: ±1%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
Qualification: MIL-PRF-19500/356
товару немає в наявності
В кошику
од. на суму грн.
JANTXV1N4961US |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 13V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
Qualification: MIL-PRF-19500/356
Description: DIODE ZENER 13V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
Qualification: MIL-PRF-19500/356
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N4961US |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 13V 5W D5B
Description: DIODE ZENER 13V 5W D5B
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N4961 |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 13V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 3 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
Qualification: MIL-PRF-19500/356
Description: DIODE ZENER 13V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 3 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
Qualification: MIL-PRF-19500/356
товару немає в наявності
В кошику
од. на суму грн.
1214GN-180LV |
![]() |
Виробник: Microchip Technology
Description: TRAN, GAN, 1200-1400 MHZ, 180W,
Description: TRAN, GAN, 1200-1400 MHZ, 180W,
товару немає в наявності
В кошику
од. на суму грн.
1214GN-600VHE |
![]() |
Виробник: Microchip Technology
Description: TRAN, GAN, 1200-1400 MHZ, 600W,
Description: TRAN, GAN, 1200-1400 MHZ, 600W,
товару немає в наявності
В кошику
од. на суму грн.
0912GN-650V |
![]() |
Виробник: Microchip Technology
Description: TRAN, GAN, 960-1215 MHZ, 650W, 5
Description: TRAN, GAN, 960-1215 MHZ, 650W, 5
товару немає в наявності
В кошику
од. на суму грн.
1012GN-800V |
![]() |
Виробник: Microchip Technology
Description: TRAN, GAN, 1030/1090 MHZ, 800W,
Description: TRAN, GAN, 1030/1090 MHZ, 800W,
товару немає в наявності
В кошику
од. на суму грн.
0912GN-500LV |
![]() |
Виробник: Microchip Technology
Description: TRAN, GAN, 960-1215 MHZ, 500W, 5
Description: TRAN, GAN, 960-1215 MHZ, 500W, 5
товару немає в наявності
В кошику
од. на суму грн.
MDSGN-750ELMV |
![]() |
Виробник: Microchip Technology
Description: TRAN, GAN, 1030/1090 MHZ, 750W,
Description: TRAN, GAN, 1030/1090 MHZ, 750W,
товару немає в наявності
В кошику
од. на суму грн.
1214GN-400LV |
![]() |
Виробник: Microchip Technology
Description: TRAN, GAN, 1200-1400 MHZ, 400W,
Description: TRAN, GAN, 1200-1400 MHZ, 400W,
товару немає в наявності
В кошику
од. на суму грн.
0912GN-300V |
![]() |
Виробник: Microchip Technology
Description: TRAN, GAN, 960-1215 MHZ, 300W, 5
Description: TRAN, GAN, 960-1215 MHZ, 300W, 5
товару немає в наявності
В кошику
од. на суму грн.
0912GN-100LV |
![]() |
Виробник: Microchip Technology
Description: TRAN, GAN, 960-1215 MHZ, 100W, 5
Description: TRAN, GAN, 960-1215 MHZ, 100W, 5
товару немає в наявності
В кошику
од. на суму грн.
JAN1N5809US/TR |
Виробник: Microchip Technology
Description: DIODE GP 100V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GP 100V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N5809US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANTXV1N5809US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANTXV1N5809/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANHCE1N5809 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 3A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
JANS1N5809URS |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 6A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 6A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N5809/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANS1N5809US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANS1N5809US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JAN1N5809/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 6A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 6A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANKCE1N5809 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A DIE
Description: DIODE GEN PURP 100V 3A DIE
товару немає в наявності
В кошику
од. на суму грн.
JANS1N5809/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
1N5809US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
1N5809URS |
Виробник: Microchip Technology
Description: DIODE GP 100V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GP 100V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
1N5809E3 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 6A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Description: DIODE GEN PURP 100V 6A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
товару немає в наявності
В кошику
од. на суму грн.
1N5809E3/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 6A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Description: DIODE GEN PURP 100V 6A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
товару немає в наявності
В кошику
од. на суму грн.
DSPIC33FJ128GP804T-I/PT |
![]() |
Виробник: Microchip Technology
Description: IC MCU 16BIT 128KB FLASH 44TQFP
Packaging: Cut Tape (CT)
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 40 MIPs
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 13x10b/12b; D/A 2x16b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DCI, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 44TQFP
Packaging: Cut Tape (CT)
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 40 MIPs
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 13x10b/12b; D/A 2x16b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DCI, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
на замовлення 3858 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 553.28 грн |
25+ | 486.98 грн |
100+ | 441.99 грн |
PIC16LF19185T-I/MV |
![]() |
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48UQFN
Description: IC MCU 8BIT 14KB FLASH 48UQFN
товару немає в наявності
В кошику
од. на суму грн.
PIC16LF19185T-I/MV |
![]() |
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48UQFN
Description: IC MCU 8BIT 14KB FLASH 48UQFN
на замовлення 169 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 162.21 грн |
25+ | 142.75 грн |
100+ | 129.42 грн |
PIC16F19185T-I/MV |
![]() |
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48UQFN
Description: IC MCU 8BIT 14KB FLASH 48UQFN
товару немає в наявності
В кошику
од. на суму грн.
PIC16F19185T-I/MV |
![]() |
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48UQFN
Description: IC MCU 8BIT 14KB FLASH 48UQFN
товару немає в наявності
В кошику
од. на суму грн.
PIC16LF19185T-I/PT |
![]() |
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48TQFP
Description: IC MCU 8BIT 14KB FLASH 48TQFP
товару немає в наявності
В кошику
од. на суму грн.
PIC16LF19185T-I/PT |
![]() |
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48TQFP
Description: IC MCU 8BIT 14KB FLASH 48TQFP
товару немає в наявності
В кошику
од. на суму грн.
PIC16LF19185-E/PT |
![]() |
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48TQFP
Description: IC MCU 8BIT 14KB FLASH 48TQFP
товару немає в наявності
В кошику
од. на суму грн.
PIC16F19185-E/PT |
![]() |
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48TQFP
Description: IC MCU 8BIT 14KB FLASH 48TQFP
товару немає в наявності
В кошику
од. на суму грн.
PIC16LF19185-I/PT |
![]() |
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48TQFP
Description: IC MCU 8BIT 14KB FLASH 48TQFP
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N5189/TR |
Виробник: Microchip Technology
Description: DIODE STANDARD 500V 3A B
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Qualification: MIL-PRF-19500/424
Description: DIODE STANDARD 500V 3A B
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Qualification: MIL-PRF-19500/424
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N5189 |
Виробник: Microchip Technology
Description: DIODE STANDARD 500V 3A B
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Qualification: MIL-PRF-19500/424
Description: DIODE STANDARD 500V 3A B
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Qualification: MIL-PRF-19500/424
товару немає в наявності
В кошику
од. на суму грн.
PD-9501G-SFP/AC-EU |
![]() |
Виробник: Microchip Technology
Description: 1-PORT AT 60W SFP AC EU CORD
Description: 1-PORT AT 60W SFP AC EU CORD
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 18455.75 грн |
PD-9606G/ACDC/M-EU |
![]() |
Виробник: Microchip Technology
Description: 6-PORT AT 95W NMS AC EU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 57V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 95W
Compliance: IEEE802.3af, IEEE802.3at
Current - Output: 1.67 A
Number of Ports: 6
Description: 6-PORT AT 95W NMS AC EU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 57V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 95W
Compliance: IEEE802.3af, IEEE802.3at
Current - Output: 1.67 A
Number of Ports: 6
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 97866.12 грн |
PD-9601G/AC-EU |
![]() |
Виробник: Microchip Technology
Description: 1-PORT AT 95W AC EU CORD
Description: 1-PORT AT 95W AC EU CORD
товару немає в наявності
В кошику
од. на суму грн.
PD-9501GR/SP/AC-EU |
![]() |
Виробник: Microchip Technology
Description: 1-PORT AT 60W SURGE AC EU CORD
Description: 1-PORT AT 60W SURGE AC EU CORD
товару немає в наявності
В кошику
од. на суму грн.
PD-9606GC/AC-EU |
![]() |
Виробник: Microchip Technology
Description: 6-PORT BT 90W NMS AC EU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
Description: 6-PORT BT 90W NMS AC EU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
товару немає в наявності
В кошику
од. на суму грн.
PD-9612GC/AC-EU |
![]() |
Виробник: Microchip Technology
Description: 12-PORT BT 90W NMS AC EU CORD
Description: 12-PORT BT 90W NMS AC EU CORD
товару немає в наявності
В кошику
од. на суму грн.