Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (358137) > Сторінка 1620 з 5969
Фото | Назва | Виробник | Інформація |
Доступність |
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JANTX1N4961 | Microchip Technology |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 3 Ohms Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V Qualification: MIL-PRF-19500/356 |
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1214GN-180LV | Microchip Technology |
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1214GN-600VHE | Microchip Technology |
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товару немає в наявності |
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0912GN-650V | Microchip Technology |
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товару немає в наявності |
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1012GN-800V | Microchip Technology |
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товару немає в наявності |
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0912GN-500LV | Microchip Technology |
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товару немає в наявності |
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MDSGN-750ELMV | Microchip Technology |
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товару немає в наявності |
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1214GN-400LV | Microchip Technology |
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товару немає в наявності |
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0912GN-300V | Microchip Technology |
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товару немає в наявності |
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0912GN-100LV | Microchip Technology |
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товару немає в наявності |
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JAN1N5809US/TR | Microchip Technology |
Description: DIODE GP 100V 3A SQ-MELF B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N5809US/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 3A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
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В кошику од. на суму грн. | ||||||
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JANTXV1N5809US/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 3A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
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В кошику од. на суму грн. | ||||||
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JANTXV1N5809/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 65pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
JANHCE1N5809 | Microchip Technology |
Description: DIODE GEN PURP 100V 3A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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В кошику од. на суму грн. | |||||||
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JANS1N5809URS | Microchip Technology |
Description: DIODE GEN PURP 100V 6A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N5809/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANS1N5809US | Microchip Technology |
Description: DIODE GEN PURP 100V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANS1N5809US/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 3A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Qualification: MIL-PRF-19500/477 |
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В кошику од. на суму грн. | ||||||
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JAN1N5809/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
JANKCE1N5809 | Microchip Technology | Description: DIODE GEN PURP 100V 3A DIE |
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JANS1N5809/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N5809US/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 3A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N5809URS | Microchip Technology |
Description: DIODE GP 100V 3A SQ-MELF B Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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1N5809E3 | Microchip Technology |
Description: DIODE GEN PURP 100V 6A B AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A |
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В кошику од. на суму грн. | ||||||
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1N5809E3/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A |
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DSPIC33FJ128GP804T-I/PT | Microchip Technology |
![]() Packaging: Cut Tape (CT) Package / Case: 44-TQFP Mounting Type: Surface Mount Speed: 40 MIPs Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: dsPIC Data Converters: A/D 13x10b/12b; D/A 2x16b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DCI, DMA, I2S, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Part Status: Active Number of I/O: 35 DigiKey Programmable: Not Verified |
на замовлення 3858 шт: термін постачання 21-31 дні (днів) |
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PIC16LF19185T-I/MV | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC16LF19185T-I/MV | Microchip Technology |
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на замовлення 169 шт: термін постачання 21-31 дні (днів) |
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PIC16F19185T-I/MV | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC16F19185T-I/MV | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC16LF19185T-I/PT | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC16LF19185T-I/PT | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC16LF19185-E/PT | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC16F19185-E/PT | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC16LF19185-I/PT | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
JANTX1N5189/TR | Microchip Technology |
Description: DIODE STANDARD 500V 3A B Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 500 V Qualification: MIL-PRF-19500/424 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
JANTX1N5189 | Microchip Technology |
Description: DIODE STANDARD 500V 3A B Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 500 V Qualification: MIL-PRF-19500/424 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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PD-9501G-SFP/AC-EU | Microchip Technology |
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на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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PD-9606G/ACDC/M-EU | Microchip Technology |
![]() Packaging: Bulk Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm) Voltage - Output: 57V Mounting Type: Rack Mount Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10/100/1000 Mbps Approval Agency: CE Power (Watts) - Per Port: 95W Compliance: IEEE802.3af, IEEE802.3at Current - Output: 1.67 A Number of Ports: 6 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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PD-9601G/AC-EU | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||
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PD-9501GR/SP/AC-EU | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
PD-9606GC/AC-EU | Microchip Technology |
![]() Packaging: Bulk Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm) Voltage - Output: 55V Mounting Type: Rack Mount Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10/100/1000 Mbps Approval Agency: CE Power (Watts) - Per Port: 90W Compliance: IEEE802.3bt Current - Output: 1.64 A Number of Ports: 6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
PD-9612GC/AC-EU | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||
PD-9512-10GC/AC-EK | Microchip Technology |
Description: 12-PORT BT 60W 10G 1KW EU/UK POW Packaging: Bulk Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm) Voltage - Output: 54V Mounting Type: Desktop Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10Gbps Power (Watts) - Per Port: 60W Compliance: IEEE802.3bt Part Status: Active Current - Output: 1.11 A Number of Ports: 12 Standard Number: 62368-1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
PD-9524-10GC/AC-EK | Microchip Technology |
Description: 24-PORT BT 60W 10G 1KW EU/UK POW Packaging: Bulk Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm) Voltage - Output: 54V Mounting Type: Desktop Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10Gbps Power (Watts) - Per Port: 60W Compliance: IEEE802.3bt Part Status: Active Current - Output: 1.11 A Number of Ports: 24 Standard Number: 62368-1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
PD-9501GCS/AC-EU | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||
2N5560 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-211MB, TO-63-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Supplier Device Package: TO-63 Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MX5KP6.0A | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N5537B-1 | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
1N5257BE3/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: DO-35 Part Status: Obsolete Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
1N5257BE3/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: DO-35 Part Status: Obsolete Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
1N5257BE3 | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: DO-35 Part Status: Obsolete Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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1N5257B/TR | Microchip Technology |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TA) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANHCA1N5819 | Microchip Technology |
![]() Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 110°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V Qualification: MIL-PRF-19500/586 |
на замовлення 342 шт: термін постачання 21-31 дні (днів) |
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PIC24FJ64GP202-E/SS | Microchip Technology |
![]() Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 64KB (22K x 24) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: PIC Data Converters: A/D 10x12b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT Supplier Device Package: 28-SSOP Number of I/O: 21 DigiKey Programmable: Not Verified |
на замовлення 344 шт: термін постачання 21-31 дні (днів) |
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PIC24FJ64GP202-I/SS | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
MPL4701-206/TR | Microchip Technology |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||
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34AA04T-I/SN | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 350 ns Memory Organization: 256 x 8 x 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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34AA04T-I/SN | Microchip Technology |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 350 ns Memory Organization: 256 x 8 x 2 |
на замовлення 2983 шт: термін постачання 21-31 дні (днів) |
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JANTX1N4961 |
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Виробник: Microchip Technology
Description: DIODE ZENER 13V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 3 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
Qualification: MIL-PRF-19500/356
Description: DIODE ZENER 13V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 3 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
Qualification: MIL-PRF-19500/356
товару немає в наявності
В кошику
од. на суму грн.
1214GN-180LV |
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Виробник: Microchip Technology
Description: TRAN, GAN, 1200-1400 MHZ, 180W,
Description: TRAN, GAN, 1200-1400 MHZ, 180W,
товару немає в наявності
В кошику
од. на суму грн.
1214GN-600VHE |
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Виробник: Microchip Technology
Description: TRAN, GAN, 1200-1400 MHZ, 600W,
Description: TRAN, GAN, 1200-1400 MHZ, 600W,
товару немає в наявності
В кошику
од. на суму грн.
0912GN-650V |
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Виробник: Microchip Technology
Description: TRAN, GAN, 960-1215 MHZ, 650W, 5
Description: TRAN, GAN, 960-1215 MHZ, 650W, 5
товару немає в наявності
В кошику
од. на суму грн.
1012GN-800V |
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Виробник: Microchip Technology
Description: TRAN, GAN, 1030/1090 MHZ, 800W,
Description: TRAN, GAN, 1030/1090 MHZ, 800W,
товару немає в наявності
В кошику
од. на суму грн.
0912GN-500LV |
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Виробник: Microchip Technology
Description: TRAN, GAN, 960-1215 MHZ, 500W, 5
Description: TRAN, GAN, 960-1215 MHZ, 500W, 5
товару немає в наявності
В кошику
од. на суму грн.
MDSGN-750ELMV |
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Виробник: Microchip Technology
Description: TRAN, GAN, 1030/1090 MHZ, 750W,
Description: TRAN, GAN, 1030/1090 MHZ, 750W,
товару немає в наявності
В кошику
од. на суму грн.
1214GN-400LV |
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Виробник: Microchip Technology
Description: TRAN, GAN, 1200-1400 MHZ, 400W,
Description: TRAN, GAN, 1200-1400 MHZ, 400W,
товару немає в наявності
В кошику
од. на суму грн.
0912GN-300V |
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Виробник: Microchip Technology
Description: TRAN, GAN, 960-1215 MHZ, 300W, 5
Description: TRAN, GAN, 960-1215 MHZ, 300W, 5
товару немає в наявності
В кошику
од. на суму грн.
0912GN-100LV |
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Виробник: Microchip Technology
Description: TRAN, GAN, 960-1215 MHZ, 100W, 5
Description: TRAN, GAN, 960-1215 MHZ, 100W, 5
товару немає в наявності
В кошику
од. на суму грн.
JAN1N5809US/TR |
Виробник: Microchip Technology
Description: DIODE GP 100V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GP 100V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N5809US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANTXV1N5809US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANTXV1N5809/TR |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANHCE1N5809 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 3A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
JANS1N5809URS |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 6A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 6A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N5809/TR |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANS1N5809US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANS1N5809US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JAN1N5809/TR |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 6A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 6A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
JANKCE1N5809 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A DIE
Description: DIODE GEN PURP 100V 3A DIE
товару немає в наявності
В кошику
од. на суму грн.
JANS1N5809/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: MIL-PRF-19500/477
товару немає в наявності
В кошику
од. на суму грн.
1N5809US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
1N5809URS |
Виробник: Microchip Technology
Description: DIODE GP 100V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GP 100V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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1N5809E3 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 6A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Description: DIODE GEN PURP 100V 6A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
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1N5809E3/TR |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 6A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Description: DIODE GEN PURP 100V 6A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
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DSPIC33FJ128GP804T-I/PT |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 128KB FLASH 44TQFP
Packaging: Cut Tape (CT)
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 40 MIPs
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 13x10b/12b; D/A 2x16b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DCI, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 44TQFP
Packaging: Cut Tape (CT)
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 40 MIPs
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 13x10b/12b; D/A 2x16b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DCI, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
на замовлення 3858 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 540.85 грн |
25+ | 476.03 грн |
100+ | 432.06 грн |
PIC16LF19185T-I/MV |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48UQFN
Description: IC MCU 8BIT 14KB FLASH 48UQFN
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PIC16LF19185T-I/MV |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48UQFN
Description: IC MCU 8BIT 14KB FLASH 48UQFN
на замовлення 169 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 158.56 грн |
25+ | 139.54 грн |
100+ | 126.51 грн |
PIC16F19185T-I/MV |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48UQFN
Description: IC MCU 8BIT 14KB FLASH 48UQFN
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PIC16F19185T-I/MV |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48UQFN
Description: IC MCU 8BIT 14KB FLASH 48UQFN
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PIC16LF19185T-I/PT |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48TQFP
Description: IC MCU 8BIT 14KB FLASH 48TQFP
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PIC16LF19185T-I/PT |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48TQFP
Description: IC MCU 8BIT 14KB FLASH 48TQFP
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PIC16LF19185-E/PT |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48TQFP
Description: IC MCU 8BIT 14KB FLASH 48TQFP
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PIC16F19185-E/PT |
![]() |
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48TQFP
Description: IC MCU 8BIT 14KB FLASH 48TQFP
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PIC16LF19185-I/PT |
![]() |
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 48TQFP
Description: IC MCU 8BIT 14KB FLASH 48TQFP
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JANTX1N5189/TR |
Виробник: Microchip Technology
Description: DIODE STANDARD 500V 3A B
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Qualification: MIL-PRF-19500/424
Description: DIODE STANDARD 500V 3A B
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Qualification: MIL-PRF-19500/424
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JANTX1N5189 |
Виробник: Microchip Technology
Description: DIODE STANDARD 500V 3A B
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Qualification: MIL-PRF-19500/424
Description: DIODE STANDARD 500V 3A B
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Qualification: MIL-PRF-19500/424
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PD-9501G-SFP/AC-EU |
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Виробник: Microchip Technology
Description: 1-PORT AT 60W SFP AC EU CORD
Description: 1-PORT AT 60W SFP AC EU CORD
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 18041.01 грн |
PD-9606G/ACDC/M-EU |
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Виробник: Microchip Technology
Description: 6-PORT AT 95W NMS AC EU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 57V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 95W
Compliance: IEEE802.3af, IEEE802.3at
Current - Output: 1.67 A
Number of Ports: 6
Description: 6-PORT AT 95W NMS AC EU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 57V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 95W
Compliance: IEEE802.3af, IEEE802.3at
Current - Output: 1.67 A
Number of Ports: 6
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 95666.88 грн |
PD-9601G/AC-EU |
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Виробник: Microchip Technology
Description: 1-PORT AT 95W AC EU CORD
Description: 1-PORT AT 95W AC EU CORD
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PD-9501GR/SP/AC-EU |
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Виробник: Microchip Technology
Description: 1-PORT AT 60W SURGE AC EU CORD
Description: 1-PORT AT 60W SURGE AC EU CORD
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PD-9606GC/AC-EU |
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Виробник: Microchip Technology
Description: 6-PORT BT 90W NMS AC EU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
Description: 6-PORT BT 90W NMS AC EU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
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PD-9612GC/AC-EU |
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Виробник: Microchip Technology
Description: 12-PORT BT 90W NMS AC EU CORD
Description: 12-PORT BT 90W NMS AC EU CORD
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PD-9512-10GC/AC-EK |
Виробник: Microchip Technology
Description: 12-PORT BT 60W 10G 1KW EU/UK POW
Packaging: Bulk
Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm)
Voltage - Output: 54V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10Gbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3bt
Part Status: Active
Current - Output: 1.11 A
Number of Ports: 12
Standard Number: 62368-1
Description: 12-PORT BT 60W 10G 1KW EU/UK POW
Packaging: Bulk
Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm)
Voltage - Output: 54V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10Gbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3bt
Part Status: Active
Current - Output: 1.11 A
Number of Ports: 12
Standard Number: 62368-1
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PD-9524-10GC/AC-EK |
Виробник: Microchip Technology
Description: 24-PORT BT 60W 10G 1KW EU/UK POW
Packaging: Bulk
Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm)
Voltage - Output: 54V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10Gbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3bt
Part Status: Active
Current - Output: 1.11 A
Number of Ports: 24
Standard Number: 62368-1
Description: 24-PORT BT 60W 10G 1KW EU/UK POW
Packaging: Bulk
Size / Dimension: 17.20" L x 10.70" W x 1.75" H (436.9mm x 271.8mm x 44.5mm)
Voltage - Output: 54V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10Gbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3bt
Part Status: Active
Current - Output: 1.11 A
Number of Ports: 24
Standard Number: 62368-1
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PD-9501GCS/AC-EU |
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Виробник: Microchip Technology
Description: 1-PORT BT 60W SFP AC EU CORD
Description: 1-PORT BT 60W SFP AC EU CORD
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В кошику
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2N5560 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 W
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MX5KP6.0A |
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Виробник: Microchip Technology
Description: TVS DIODE 6VWM 10.3VC CASE 5A
Description: TVS DIODE 6VWM 10.3VC CASE 5A
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JANTX1N5537B-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 17V 500MW DO35
Description: DIODE ZENER 17V 500MW DO35
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1N5257BE3/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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1N5257BE3/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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1N5257BE3 |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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1N5257B/TR |
![]() |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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JANHCA1N5819 |
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Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 110°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Qualification: MIL-PRF-19500/586
Description: DIODE SCHOTTKY 45V 1A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 110°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Qualification: MIL-PRF-19500/586
на замовлення 342 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1585.64 грн |
100+ | 1417.56 грн |
PIC24FJ64GP202-E/SS |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 64KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (22K x 24)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 10x12b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (22K x 24)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 10x12b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
на замовлення 344 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 152.28 грн |
25+ | 134.58 грн |
100+ | 121.57 грн |
PIC24FJ64GP202-I/SS |
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Виробник: Microchip Technology
Description: IC MCU 16BIT 64KB FLASH 28SSOP
Description: IC MCU 16BIT 64KB FLASH 28SSOP
товару немає в наявності
В кошику
од. на суму грн.
MPL4701-206/TR |
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Виробник: Microchip Technology
Description: SI LIMITER NON HERMETIC MMSM
Description: SI LIMITER NON HERMETIC MMSM
товару немає в наявності
В кошику
од. на суму грн.
34AA04T-I/SN |
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Виробник: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 350 ns
Memory Organization: 256 x 8 x 2
Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 350 ns
Memory Organization: 256 x 8 x 2
товару немає в наявності
В кошику
од. на суму грн.
34AA04T-I/SN |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 350 ns
Memory Organization: 256 x 8 x 2
Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 350 ns
Memory Organization: 256 x 8 x 2
на замовлення 2983 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 29.04 грн |
25+ | 27.24 грн |
100+ | 26.44 грн |