Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (358218) > Сторінка 1632 з 5971
| Фото | Назва | Виробник | Інформація |
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| M5KP75A/TR | Microchip Technology |
Description: TVS 75V 5% 5000W UNI Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41.3A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| M5KP75AE3/TR | Microchip Technology |
Description: TVS 75V 10% 5000W UNI Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41.3A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| M5KP75CA/TR | Microchip Technology |
Description: TVS 75V 5% 5000W BI Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41.3A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: P600 Bidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| DSC1001DI1-069.1200 | Microchip Technology |
 Description: MEMS OSC AUTO LOWPWR -40C-85C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MSCGTQ100HD65C1AG | Microchip Technology |
Description: PM-IGBT-TFS-SBD~-SP1F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge NTC Thermistor: No Supplier Device Package: SP1 IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Cutoff (Max): 80 A |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| VDSOLCORES-RMFL | Microchip Technology | Description: HW/SW/OTHER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| VDSOLCORES-RM | Microchip Technology | Description: HW/SW/OTHER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MCSOLCORES-RM | Microchip Technology | Description: IP CORE MOTOR CONTROL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| ADV-VDSOLCORES-RMFL | Microchip Technology | Description: PERPETUAL RTL SOURCE FLOATING LI |
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В кошику од. на суму грн. | |||||||
| ADV-VDSOLCORES-RM | Microchip Technology | Description: PERPETUAL RTL SOURCE NODE LOCKED |
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В кошику од. на суму грн. | |||||||
| MSMBG170CAE3/TR | Microchip Technology |
Description: TVS DIODE 170VWM 275VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.2A Voltage - Reverse Standoff (Typ): 170V Supplier Device Package: DO-214AA (SMBG) Bidirectional Channels: 1 Voltage - Breakdown (Min): 189V Voltage - Clamping (Max) @ Ipp: 275V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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PIC18F26Q84-I/SS | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 28SSOP Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: PIC Data Converters: A/D 24x12b; D/A 1x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 28-SSOP Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
на замовлення 136 шт: термін постачання 21-31 дні (днів) |
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PIC18F26Q43-E/SS | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 28SSOP Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: PIC Data Converters: A/D 24x12b; D/A 1x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT Supplier Device Package: 28-SSOP Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
на замовлення 470 шт: термін постачання 21-31 дні (днів) |
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QT60240-ISG | Microchip Technology |
Description: IC TOUCH SENSOR 24KEY 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI Type: Buttons Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.25V Current - Supply: 4.6mA Number of Inputs: Up to 24 Resolution: 10 b Supplier Device Package: 32-QFN (5x5) Proximity Detection: No Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QT60240-ISG | Microchip Technology |
Description: IC TOUCH SENSOR 24KEY 32QFN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI Type: Buttons Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.25V Current - Supply: 4.6mA Number of Inputs: Up to 24 Resolution: 10 b Supplier Device Package: 32-QFN (5x5) Proximity Detection: No Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 4116 шт: термін постачання 21-31 дні (днів) |
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PIC16F17125-I/7N | Microchip Technology |
Description: IC MCU 8BIT 14KB FLASH 16VQFN Packaging: Tube Package / Case: 16-VQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 32MHz Program Memory Size: 14KB (14K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: PIC Data Converters: A/D 29x12b; D/A 2x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I²C, LINbus, RS-232, RS-485, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 16-VQFN (4x4) Part Status: Active Number of I/O: 11 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AVR64DD20-I/SO | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 20SOIC Packaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: AVR Data Converters: A/D 13x12b SAR; D/A 1x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 20-SOIC Part Status: Active Number of I/O: 16 DigiKey Programmable: Not Verified |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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AVR64DD14-I/SL | Microchip Technology |
Description: IC MCU 8BIT 64KB FLASH 14SOIC Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: AVR Data Converters: A/D 7x12b SAR; D/A 1x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT Supplier Device Package: 14-SOIC Part Status: Active Number of I/O: 10 DigiKey Programmable: Not Verified |
на замовлення 256 шт: термін постачання 21-31 дні (днів) |
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PIC16F17145-I/6N | Microchip Technology |
Description: IC MCU 8BIT 14KB FLASH 20VQFN Packaging: Tube Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 32MHz Program Memory Size: 14KB (14K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: PIC Data Converters: A/D 41x12b; D/A 2x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, RS-232, RS-485, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 20-VQFN (4x4) Part Status: Active Number of I/O: 17 DigiKey Programmable: Not Verified |
на замовлення 728 шт: термін постачання 21-31 дні (днів) |
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PIC16F17144-I/6N | Microchip Technology |
Description: IC MCU 8BIT 7KB FLASH 20VQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC16F17145-I/P | Microchip Technology |
Description: IC MCU 8BIT 14KB FLASH 20DIP Packaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Mounting Type: Through Hole Speed: 32MHz Program Memory Size: 14KB (14K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: PIC Data Converters: A/D 41x12b; D/A 2x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, RS-232, RS-485, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 20-PDIP Part Status: Active Number of I/O: 17 DigiKey Programmable: Not Verified |
на замовлення 327 шт: термін постачання 21-31 дні (днів) |
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PIC16F17145-I/SS | Microchip Technology |
Description: IC MCU 8BIT 14KB FLASH 20SSOP Packaging: Tube Package / Case: 20-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 14KB (14K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: PIC Data Converters: A/D 41x12b; D/A 2x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, RS-232, RS-485, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 20-SSOP Number of I/O: 17 DigiKey Programmable: Not Verified |
на замовлення 683 шт: термін постачання 21-31 дні (днів) |
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MMA041PP5 | Microchip Technology |
Description: IC RF AMP GPS 0HZ-25GHZ 32QFN Packaging: Tray Package / Case: 32-TFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 0Hz ~ 25GHz RF Type: General Purpose Voltage - Supply: 7V Gain: 17dB Current - Supply: 150mA Noise Figure: 2.5dB P1dB: 22dBm Test Frequency: 6GHz ~ 12GHz Supplier Device Package: 32-QFN (5x5) |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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1N5532D-1 | Microchip Technology |
Description: DIODE ZENER 12V 500MW DO204AH Packaging: Bulk Tolerance: ±1% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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S25100 | Microchip Technology |
Description: RECTIFIER Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MAPLAD15KP16CAe3 | Microchip Technology |
Description: TVS DIODE 16VWM 26VC PLAD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MAPLAD15KP16Ae3 | Microchip Technology |
Description: TVS DIODE 16VWM 26VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 576A Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.8V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MAPLAD15KP170CA | Microchip Technology |
Description: TVS DIODE 170VWM 275VC PLAD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MAPLAD15KP160CA | Microchip Technology |
Description: TVS DIODE 160VWM 259VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 58A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MAPLAD15KP160CAe3 | Microchip Technology |
Description: TVS DIODE 160VWM 259VC PLAD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MAPLAD15KP16A | Microchip Technology |
Description: TVS DIODE 16VWM 26VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 576A Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.8V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MAPLAD15KP170CAe3 | Microchip Technology |
Description: TVS DIODE 170VWM 275VC PLAD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MAPLAD15KP16CA | Microchip Technology |
Description: TVS DIODE 16VWM 26VC PLAD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MXSMBJ8.5A | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41.7A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: SMBJ (DO-214AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXSMBJ8.5Ae3 | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41.7A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: SMBJ (DO-214AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXLSMBJ8.5Ae3 | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41.7A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: SMBJ (DO-214AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MX5KP8.0A | Microchip Technology |
Description: TVS DIODE 8VWM 13.6VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 367A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.89V Voltage - Clamping (Max) @ Ipp: 13.6V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UTR40/TR | Microchip Technology | Description: DIODE GP 400V 500MA A AXIAL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UTR40 | Microchip Technology | Description: DIODE GP 400V 500MA A AXIAL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UTR42/TR | Microchip Technology | Description: DIODE GEN PURP 400V 2A A AXIAL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UTR42 | Microchip Technology | Description: DIODE GEN PURP 400V 2A A AXIAL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UTR41 | Microchip Technology |
Description: DIODE GEN PURP 400V 1A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA Current - Reverse Leakage @ Vr: 3 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UTR3340 | Microchip Technology | Description: DIODE GEN PURP 400V 3A B AXIAL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN1N5620US | Microchip Technology |
Description: DIODE GEN PURP 800V 1A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 800 V Qualification: MIL-PRF-19500/427 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N5620US | Microchip Technology |
Description: DIODE GEN PURP 800V 1A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 800 V Qualification: MIL-PRF-19500/427 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N5620 | Microchip Technology |
Description: DIODE GEN PURP 800V 1A Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 800 V Qualification: MIL-PRF-19500/427 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN1N5620US/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 800 V Qualification: MIL-PRF-19500/427 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
JANTX1N5620US/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 800 V Qualification: MIL-PRF-19500/427 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
JANS1N5620US | Microchip Technology |
Description: DIODE GEN PURP 800V 1A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Qualification: MIL-PRF-19500/427 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
JANTXV1N5620US/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 1A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Qualification: MIL-PRF-19500/427 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
JANTXV1N5620/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 800 V Qualification: MIL-PRF-19500/427 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
1N5620US/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
JANS1N5620/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 400 V Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
JANTXV1N5620US | Microchip Technology |
Description: DIODE GEN PURP 800V 1A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Qualification: MIL-PRF-19500/427 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
JANS1N5620 | Microchip Technology |
Description: DIODE GEN PURP 800V 1A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 400 V Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
JANTX1N5620/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 800 V Qualification: MIL-PRF-19500/427 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
1N5620/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
24LC024H-E/SN16KVAO | Microchip Technology |
Description: IC EEPROM 2KBIT I2C 1MHZ 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| SG3503Y | Microchip Technology |
Description: IC VREF SERIES 1% 8CERDIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
 |
SG3503DM-TR | Microchip Technology |
Description: IC VREF SERIES 1% 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. |
| M5KP75A/TR |
Виробник: Microchip Technology
Description: TVS 75V 5% 5000W UNI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS 75V 5% 5000W UNI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| M5KP75AE3/TR |
Виробник: Microchip Technology
Description: TVS 75V 10% 5000W UNI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS 75V 10% 5000W UNI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| M5KP75CA/TR |
Виробник: Microchip Technology
Description: TVS 75V 5% 5000W BI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS 75V 5% 5000W BI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DSC1001DI1-069.1200 |
|
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Description: MEMS OSC AUTO LOWPWR -40C-85C
товару немає в наявності
В кошику
од. на суму грн.
| MSCGTQ100HD65C1AG |
|
Виробник: Microchip Technology
Description: PM-IGBT-TFS-SBD~-SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: SP1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 80 A
Description: PM-IGBT-TFS-SBD~-SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: SP1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 80 A
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9652.67 грн |
| VDSOLCORES-RMFL |
Виробник: Microchip Technology
Description: HW/SW/OTHER
Description: HW/SW/OTHER
товару немає в наявності
В кошику
од. на суму грн.
| VDSOLCORES-RM |
Виробник: Microchip Technology
Description: HW/SW/OTHER
Description: HW/SW/OTHER
товару немає в наявності
В кошику
од. на суму грн.
| MCSOLCORES-RM |
Виробник: Microchip Technology
Description: IP CORE MOTOR CONTROL
Description: IP CORE MOTOR CONTROL
товару немає в наявності
В кошику
од. на суму грн.
| ADV-VDSOLCORES-RMFL |
Виробник: Microchip Technology
Description: PERPETUAL RTL SOURCE FLOATING LI
Description: PERPETUAL RTL SOURCE FLOATING LI
товару немає в наявності
В кошику
од. на суму грн.
| ADV-VDSOLCORES-RM |
Виробник: Microchip Technology
Description: PERPETUAL RTL SOURCE NODE LOCKED
Description: PERPETUAL RTL SOURCE NODE LOCKED
товару немає в наявності
В кошику
од. на суму грн.
| MSMBG170CAE3/TR |
Виробник: Microchip Technology
Description: TVS DIODE 170VWM 275VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AA (SMBG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 170VWM 275VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AA (SMBG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| PIC18F26Q84-I/SS |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 24x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 24x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 136 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 117.99 грн |
| 25+ | 105.55 грн |
| PIC18F26Q43-E/SS |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 24x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 24x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.75 грн |
| 25+ | 110.33 грн |
| 100+ | 101.43 грн |
| QT60240-ISG |
|
Виробник: Microchip Technology
Description: IC TOUCH SENSOR 24KEY 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.25V
Current - Supply: 4.6mA
Number of Inputs: Up to 24
Resolution: 10 b
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC TOUCH SENSOR 24KEY 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.25V
Current - Supply: 4.6mA
Number of Inputs: Up to 24
Resolution: 10 b
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 189.73 грн |
| QT60240-ISG |
|
Виробник: Microchip Technology
Description: IC TOUCH SENSOR 24KEY 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.25V
Current - Supply: 4.6mA
Number of Inputs: Up to 24
Resolution: 10 b
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC TOUCH SENSOR 24KEY 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.25V
Current - Supply: 4.6mA
Number of Inputs: Up to 24
Resolution: 10 b
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4116 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 228.22 грн |
| 25+ | 201.11 грн |
| 100+ | 182.70 грн |
| PIC16F17125-I/7N |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 16VQFN
Packaging: Tube
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 32MHz
Program Memory Size: 14KB (14K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 29x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, RS-232, RS-485, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-VQFN (4x4)
Part Status: Active
Number of I/O: 11
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 14KB FLASH 16VQFN
Packaging: Tube
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 32MHz
Program Memory Size: 14KB (14K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 29x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, RS-232, RS-485, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-VQFN (4x4)
Part Status: Active
Number of I/O: 11
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| AVR64DD20-I/SO |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 13x12b SAR; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-SOIC
Part Status: Active
Number of I/O: 16
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 13x12b SAR; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-SOIC
Part Status: Active
Number of I/O: 16
DigiKey Programmable: Not Verified
на замовлення 29 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.24 грн |
| 25+ | 91.76 грн |
| AVR64DD14-I/SL |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 7x12b SAR; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 7x12b SAR; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 256 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 81.51 грн |
| 25+ | 71.97 грн |
| 100+ | 64.85 грн |
| PIC16F17145-I/6N |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 20VQFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 32MHz
Program Memory Size: 14KB (14K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 41x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, RS-232, RS-485, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-VQFN (4x4)
Part Status: Active
Number of I/O: 17
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 14KB FLASH 20VQFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 32MHz
Program Memory Size: 14KB (14K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 41x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, RS-232, RS-485, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-VQFN (4x4)
Part Status: Active
Number of I/O: 17
DigiKey Programmable: Not Verified
на замовлення 728 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.07 грн |
| 25+ | 66.92 грн |
| 100+ | 64.06 грн |
| PIC16F17144-I/6N |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 7KB FLASH 20VQFN
Description: IC MCU 8BIT 7KB FLASH 20VQFN
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| PIC16F17145-I/P |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 14KB (14K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 41x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, RS-232, RS-485, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-PDIP
Part Status: Active
Number of I/O: 17
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 14KB FLASH 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 14KB (14K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 41x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, RS-232, RS-485, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-PDIP
Part Status: Active
Number of I/O: 17
DigiKey Programmable: Not Verified
на замовлення 327 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 170.78 грн |
| 25+ | 150.91 грн |
| 100+ | 136.66 грн |
| PIC16F17145-I/SS |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 14KB (14K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 41x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, RS-232, RS-485, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 14KB FLASH 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 14KB (14K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 41x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, RS-232, RS-485, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
на замовлення 683 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 78.40 грн |
| 25+ | 69.04 грн |
| 100+ | 66.73 грн |
| MMA041PP5 |
|
Виробник: Microchip Technology
Description: IC RF AMP GPS 0HZ-25GHZ 32QFN
Packaging: Tray
Package / Case: 32-TFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 0Hz ~ 25GHz
RF Type: General Purpose
Voltage - Supply: 7V
Gain: 17dB
Current - Supply: 150mA
Noise Figure: 2.5dB
P1dB: 22dBm
Test Frequency: 6GHz ~ 12GHz
Supplier Device Package: 32-QFN (5x5)
Description: IC RF AMP GPS 0HZ-25GHZ 32QFN
Packaging: Tray
Package / Case: 32-TFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 0Hz ~ 25GHz
RF Type: General Purpose
Voltage - Supply: 7V
Gain: 17dB
Current - Supply: 150mA
Noise Figure: 2.5dB
P1dB: 22dBm
Test Frequency: 6GHz ~ 12GHz
Supplier Device Package: 32-QFN (5x5)
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 13198.58 грн |
| 1N5532D-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
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| S25100 |
|
Виробник: Microchip Technology
Description: RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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| MAPLAD15KP16CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC PLAD
Description: TVS DIODE 16VWM 26VC PLAD
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| MAPLAD15KP16Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 576A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 16VWM 26VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 576A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MAPLAD15KP170CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 170VWM 275VC PLAD
Description: TVS DIODE 170VWM 275VC PLAD
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| MAPLAD15KP160CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 58A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 58A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MAPLAD15KP160CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Description: TVS DIODE 160VWM 259VC PLAD
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| MAPLAD15KP16A |
|
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 576A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 16VWM 26VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 576A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MAPLAD15KP170CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 170VWM 275VC PLAD
Description: TVS DIODE 170VWM 275VC PLAD
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| MAPLAD15KP16CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 16VWM 26VC PLAD
Description: TVS DIODE 16VWM 26VC PLAD
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| MXSMBJ8.5A |
|
Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 8.5VWM 14.4VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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| MXSMBJ8.5Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 8.5VWM 14.4VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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| MXLSMBJ8.5Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 8.5VWM 14.4VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MX5KP8.0A |
|
Виробник: Microchip Technology
Description: TVS DIODE 8VWM 13.6VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 367A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 8VWM 13.6VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 367A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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| UTR40/TR |
Виробник: Microchip Technology
Description: DIODE GP 400V 500MA A AXIAL
Description: DIODE GP 400V 500MA A AXIAL
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| UTR40 |
Виробник: Microchip Technology
Description: DIODE GP 400V 500MA A AXIAL
Description: DIODE GP 400V 500MA A AXIAL
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| UTR42/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 2A A AXIAL
Description: DIODE GEN PURP 400V 2A A AXIAL
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| UTR42 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 2A A AXIAL
Description: DIODE GEN PURP 400V 2A A AXIAL
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| UTR41 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 400 V
Description: DIODE GEN PURP 400V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 400 V
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| UTR3340 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A B AXIAL
Description: DIODE GEN PURP 400V 3A B AXIAL
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| JAN1N5620US |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Qualification: MIL-PRF-19500/427
Description: DIODE GEN PURP 800V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Qualification: MIL-PRF-19500/427
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| JANTX1N5620US |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Qualification: MIL-PRF-19500/427
Description: DIODE GEN PURP 800V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Qualification: MIL-PRF-19500/427
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| JANTXV1N5620 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Qualification: MIL-PRF-19500/427
Description: DIODE GEN PURP 800V 1A
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Qualification: MIL-PRF-19500/427
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| JAN1N5620US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Qualification: MIL-PRF-19500/427
Description: DIODE GEN PURP 800V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Qualification: MIL-PRF-19500/427
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| JANTX1N5620US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Qualification: MIL-PRF-19500/427
Description: DIODE GEN PURP 800V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Qualification: MIL-PRF-19500/427
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| JANS1N5620US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Qualification: MIL-PRF-19500/427
Description: DIODE GEN PURP 800V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Qualification: MIL-PRF-19500/427
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| JANTXV1N5620US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Qualification: MIL-PRF-19500/427
Description: DIODE GEN PURP 800V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Qualification: MIL-PRF-19500/427
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| JANTXV1N5620/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Qualification: MIL-PRF-19500/427
Description: DIODE GEN PURP 800V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Qualification: MIL-PRF-19500/427
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| 1N5620US/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Description: DIODE GEN PURP 800V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
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| JANS1N5620/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 800V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Qualification: MIL-PRF-19500/429
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| JANTXV1N5620US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Qualification: MIL-PRF-19500/427
Description: DIODE GEN PURP 800V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Qualification: MIL-PRF-19500/427
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| JANS1N5620 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 800V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Qualification: MIL-PRF-19500/429
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| JANTX1N5620/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Qualification: MIL-PRF-19500/427
Description: DIODE GEN PURP 800V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Qualification: MIL-PRF-19500/427
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| 1N5620/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Description: DIODE GEN PURP 800V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
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| 24LC024H-E/SN16KVAO |
|
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT I2C 1MHZ 8SOIC
Description: IC EEPROM 2KBIT I2C 1MHZ 8SOIC
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| SG3503Y |
|
Виробник: Microchip Technology
Description: IC VREF SERIES 1% 8CERDIP
Description: IC VREF SERIES 1% 8CERDIP
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| SG3503DM-TR |
|
Виробник: Microchip Technology
Description: IC VREF SERIES 1% 8SOIC
Description: IC VREF SERIES 1% 8SOIC
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