Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (337376) > Сторінка 1650 з 5623
| Фото | Назва | Виробник | Інформація |
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JANS1N4116UR-1 | Microchip Technology | Description: ZENER DIODE |
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JANTXV1N4116CUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANTX1N4116C-1/TR | Microchip Technology |
 Description: VOLTAGE REGULATOR |
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JANS1N4116CUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANTX1N4116-1 | Microchip Technology |
Description: DIODE ZENER 24V 500MW DO35 |
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JANS1N4116D-1 | Microchip Technology | Description: ZENER DIODE |
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JANTX1N4116DUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANS1N4116-1 | Microchip Technology | Description: ZENER DIODE |
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JANTX1N4116-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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JANS1N4116C-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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JANTX1N3029DUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANTX1N3029C-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JAN1N3029DUR-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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JANTX1N3029CUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANTX1N3029D-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANTXV1N3029DUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANTXV1N3029CUR-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JANTXV1N3029C-1/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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JAN1N3029CUR-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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JAN1N3029C-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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JAN1N3029D-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR |
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SG3503DM | Microchip Technology |
Description: IC VREF SERIES 1% 8SOIC |
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SG3503T | Microchip Technology |
Description: IC VREF SERIES 1% TO39 |
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| PHP208H1 | Microchip Technology | Description: BI-DIRECTIONAL TVS |
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| PHP208 | Microchip Technology |
Description: TVS DIODE |
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| MCP651EV-VOS | Microchip Technology |
Description: BOARD EVAL OP AMP MCP651 |
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2N696 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V Supplier Device Package: TO-5AA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 600 mW |
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; ; 3.jpg "2N696S") |
2N696S | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V Supplier Device Package: TO-39 Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 600 mW |
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JAN2N696 | Microchip Technology |
Description: TRANS NPN 40V TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V Supplier Device Package: TO-5AA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 600 mW |
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JAN2N696S | Microchip Technology |
Description: TRANS NPN 40V TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 600 mW |
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AT24CS02-STUM-T | Microchip Technology |
Description: IC EEPROM 2KBIT I2C 1MHZ SOT23-5 Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-5 Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 550 ns Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
на замовлення 5099 шт: термін постачання 21-31 дні (днів) |
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| 93LC86C/W15K | Microchip Technology |
Description: IC EEPROM 16KBIT MICROWIRE DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: Die Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 2K x 8, 1K x 16 DigiKey Programmable: Not Verified |
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| 93LC86C-I/W15K | Microchip Technology |
Description: IC EEPROM 16KBIT MICROWIRE DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: Die Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 2K x 8, 1K x 16 DigiKey Programmable: Not Verified |
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| 684-4 | Microchip Technology |
Description: SINGLE PHASE BRIDGE Packaging: Bulk Package / Case: 4-Square, NA Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: NA Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
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| 2N5240 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
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MART100KP200CAe3 | Microchip Technology |
Description: TVS DIODE 200VWM 392VC CASE 5A |
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| MXLSMCG18CA | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC SMCG |
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| MXSMCG18CA | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC SMCG |
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| MASMCG18Ae3 | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC SMCG |
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| MXSMCG18A | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC SMCG |
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| MASMCG18A | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC SMCG |
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| MASMCG18CA/TR | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC SMCG |
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| MXLSMCG18CAe3 | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC SMCG |
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| MXSMCG18Ae3 | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC SMCG |
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| MASMCG18CAe3 | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC SMCG |
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| MXLSMCG18Ae3 | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC SMCG |
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| MXSMCG18CA/TR | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC SMCG |
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| MXSMCG18CAe3 | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC SMCG |
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| MXLSMCG18A | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC SMCG |
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MSMCG18A/TR | Microchip Technology |
Description: TVS DIODE 18VWM 29.2VC SMCG |
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| 2292200-R | Microchip Technology |
Description: SMARTHBA 2100-4I4E SINGLE Packaging: Bag Interface: PCI Express Type: SAS/SATA Number of Ports: 4 |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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| 1200UP32IXS | Microchip Technology |
Description: HBA ULTRA 1200-32I SINGLE Packaging: Bulk Interface: PCI Express Type: Host Bus Adapter (HBA) Part Status: Active Number of Ports: 32 |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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120016IXS | Microchip Technology |
Description: HBA 1200-16I SINGLE Packaging: Bulk Interface: PCI Express Type: Host Bus Adapter (HBA) Part Status: Active Number of Ports: 16 |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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12008IXS | Microchip Technology | Description: HBA 1200-8I SINGLE |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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~~2-Top.jpg "MSMCJLCE170A/TR") |
MSMCJLCE170A/TR | Microchip Technology |
Description: TVS DIODE 170VWM 275VC SMCJ |
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| MXLSMCGLCE17Ae3 | Microchip Technology |
Description: TVS DIODE 17VWM 27.6VC SMCG |
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| MSMCGLCE170Ae3 | Microchip Technology |
Description: TVS DIODE 170VWM 275VC SMCG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.4A Voltage - Reverse Standoff (Typ): 170V Supplier Device Package: SMCG (DO-215AB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 189V Voltage - Clamping (Max) @ Ipp: 275V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MLCE170A | Microchip Technology |
Description: TVS DIODE 170VWM 275VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.4A Voltage - Reverse Standoff (Typ): 170V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 189V Voltage - Clamping (Max) @ Ipp: 275V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
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| MLCE170Ae3 | Microchip Technology |
Description: TVS DIODE 170VWM 275VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.4A Voltage - Reverse Standoff (Typ): 170V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 189V Voltage - Clamping (Max) @ Ipp: 275V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MLCE17Ae3 | Microchip Technology |
Description: TVS DIODE 17VWM 27.6VC CASE-1 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 54A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| 2N696 |
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Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
Supplier Device Package: TO-5AA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
Supplier Device Package: TO-5AA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
товар відсутній
| 2N696S |
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Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
Supplier Device Package: TO-39
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
Supplier Device Package: TO-39
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
товар відсутній
| JAN2N696 |
Виробник: Microchip Technology
Description: TRANS NPN 40V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
Supplier Device Package: TO-5AA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Description: TRANS NPN 40V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
Supplier Device Package: TO-5AA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
товар відсутній
| JAN2N696S |
Виробник: Microchip Technology
Description: TRANS NPN 40V TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Description: TRANS NPN 40V TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
товар відсутній
| AT24CS02-STUM-T |
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Виробник: Microchip Technology
Description: IC EEPROM 2KBIT I2C 1MHZ SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C 1MHZ SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
на замовлення 5099 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 20.62 грн |
| 100+ | 18.88 грн |
| 93LC86C/W15K |
|
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT MICROWIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT MICROWIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
товар відсутній
| 93LC86C-I/W15K |
|
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT MICROWIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT MICROWIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
товар відсутній
| 684-4 |
Виробник: Microchip Technology
Description: SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-Square, NA
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: NA
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-Square, NA
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: NA
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
| MART100KP200CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 200VWM 392VC CASE 5A
Description: TVS DIODE 200VWM 392VC CASE 5A
товар відсутній
| MASMCG18CA/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC SMCG
Description: TVS DIODE 18VWM 29.2VC SMCG
товар відсутній
| MXLSMCG18CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC SMCG
Description: TVS DIODE 18VWM 29.2VC SMCG
товар відсутній
| MXSMCG18CA/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 29.2VC SMCG
Description: TVS DIODE 18VWM 29.2VC SMCG
товар відсутній
| 2292200-R |
|
Виробник: Microchip Technology
Description: SMARTHBA 2100-4I4E SINGLE
Packaging: Bag
Interface: PCI Express
Type: SAS/SATA
Number of Ports: 4
Description: SMARTHBA 2100-4I4E SINGLE
Packaging: Bag
Interface: PCI Express
Type: SAS/SATA
Number of Ports: 4
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 31817.23 грн |
| 1200UP32IXS |
Виробник: Microchip Technology
Description: HBA ULTRA 1200-32I SINGLE
Packaging: Bulk
Interface: PCI Express
Type: Host Bus Adapter (HBA)
Part Status: Active
Number of Ports: 32
Description: HBA ULTRA 1200-32I SINGLE
Packaging: Bulk
Interface: PCI Express
Type: Host Bus Adapter (HBA)
Part Status: Active
Number of Ports: 32
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 65174.99 грн |
| 120016IXS |
Виробник: Microchip Technology
Description: HBA 1200-16I SINGLE
Packaging: Bulk
Interface: PCI Express
Type: Host Bus Adapter (HBA)
Part Status: Active
Number of Ports: 16
Description: HBA 1200-16I SINGLE
Packaging: Bulk
Interface: PCI Express
Type: Host Bus Adapter (HBA)
Part Status: Active
Number of Ports: 16
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 53576.59 грн |
| 12008IXS |
Виробник: Microchip Technology
Description: HBA 1200-8I SINGLE
Description: HBA 1200-8I SINGLE
на замовлення 18 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 38204.7 грн |
| MSMCJLCE170A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 170VWM 275VC SMCJ
Description: TVS DIODE 170VWM 275VC SMCJ
товар відсутній
| MXLSMCGLCE17Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 27.6VC SMCG
Description: TVS DIODE 17VWM 27.6VC SMCG
товар відсутній
| MSMCGLCE170Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 170VWM 275VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: SMCG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 170VWM 275VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: SMCG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MLCE170A |
|
Виробник: Microchip Technology
Description: TVS DIODE 170VWM 275VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 170VWM 275VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MLCE170Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 170VWM 275VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 170VWM 275VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MLCE17Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 27.6VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 17VWM 27.6VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній