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1N5524C/TR 1N5524C/TR Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
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1N5524D/TR 1N5524D/TR Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
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1N5524DUR-1/TR 1N5524DUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
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TC2574-3.3VPA TC2574-3.3VPA Microchip Technology MCHPS00515-1.pdf?t.download=true&u=5oefqw Description: 0.5A STEP-DOWN SWITCHING REGULAT
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 8-DIP
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
на замовлення 948 шт:
термін постачання 21-31 дні (днів)
272+88.33 грн
Мінімальне замовлення: 272
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PIC16F18124T-I/ST Microchip Technology PIC16F18114-15-24-25-44-45-Microcontroller-Data-Sheet-40002404A.pdf Description: 7KB FLASH, 512B RAM, 128B EEPROM
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PIC16F18124T-I/ST Microchip Technology PIC16F18114-15-24-25-44-45-Microcontroller-Data-Sheet-40002404A.pdf Description: 7KB FLASH, 512B RAM, 128B EEPROM
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1N5306/TR 1N5306/TR Microchip Technology Description: DIODE CUR REG 100V 2.42MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.42mA
Voltage - Limiting (Max): 1.95V
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MCP1702T-5102E/CB MCP1702T-5102E/CB Microchip Technology MCP1702-Data-Sheet-DS20002008.pdf Description: IC REG LIN 5.1V 250MA SOT23A-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23A-3
Voltage - Output (Min/Fixed): 5.1V
Part Status: Active
PSRR: 44dB (100Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+34.59 грн
Мінімальне замовлення: 3000
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MCP1702T-5102E/CB MCP1702T-5102E/CB Microchip Technology MCP1702-Data-Sheet-DS20002008.pdf Description: IC REG LIN 5.1V 250MA SOT23A-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23A-3
Voltage - Output (Min/Fixed): 5.1V
Part Status: Active
PSRR: 44dB (100Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 5925 шт:
термін постачання 21-31 дні (днів)
8+45.77 грн
25+36.72 грн
100+33.31 грн
Мінімальне замовлення: 8
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JANTX2N3637UB/TR JANTX2N3637UB/TR Microchip Technology Description: TRANS PNP 175V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSR2N3637UB JANSR2N3637UB Microchip Technology Description: TRANS PNP 175V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANS2N3637L JANS2N3637L Microchip Technology Description: TRANS PNP 175V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANS2N3637UB/TR JANS2N3637UB/TR Microchip Technology Description: TRANS PNP 175V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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MNS2N3637UBP/TR MNS2N3637UBP/TR Microchip Technology Description: TRANS PNP 175V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANKCAR2N3637 JANKCAR2N3637 Microchip Technology Description: TRANS PNP 175V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTXV2N3637P JANTXV2N3637P Microchip Technology Description: SMALL-SIGNAL BJT
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JANSR2N3637UB/TR JANSR2N3637UB/TR Microchip Technology Description: TRANS PNP 175V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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MSR2N3637 MSR2N3637 Microchip Technology Description: RH SMALL-SIGNAL BJT
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JANKCA2N3637 JANKCA2N3637 Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 175V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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MNS2N3637UBP MNS2N3637UBP Microchip Technology Description: TRANS PNP 175V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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MSR2N3637UB MSR2N3637UB Microchip Technology Description: RH SMALL-SIGNAL BJT
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JANTXV2N3637UB/TR JANTXV2N3637UB/TR Microchip Technology Description: TRANS PNP 175V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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MSR2N3637UB/TR MSR2N3637UB/TR Microchip Technology Description: SMALL-SIGNAL BJT
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JANSR2N3637 JANSR2N3637 Microchip Technology Description: TRANS PNP 175V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSR2N3637L JANSR2N3637L Microchip Technology Description: TRANS PNP 175V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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2N3637UB/TR 2N3637UB/TR Microchip Technology Description: TRANS PNP 175V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
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LXS201-23-2/TR LXS201-23-2/TR Microchip Technology Description: DIODE SCHOTTKY 3V 250MW SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: SOT-23-3
Current - Max: 1 A
Power Dissipation (Max): 250 mW
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LXS201-23-2/TR LXS201-23-2/TR Microchip Technology Description: DIODE SCHOTTKY 3V 250MW SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: SOT-23-3
Current - Max: 1 A
Power Dissipation (Max): 250 mW
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AT75C310-Q160 AT75C310-Q160 Microchip Technology AT75C310%20Summary.pdf Description: IC SIAP ARM/THUMB OAKDSP 160QFP
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U3280M-NFBG3Y Microchip Technology U3280M.pdf Description: IC RFID TRANSP 100-150KHZ 16SSOP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Frequency: 100kHz ~ 150kHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6.5V
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1N1401 Microchip Technology 1N3288-1N3297.pdf Description: DIODE GEN PURP 400V 100A DO205AA
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EV19K07A EV19K07A Microchip Technology CEC1736_Dev_Board_Users_Guide.pdf Description: CEC1736 DEVELOPMENT BOARD
Packaging: Box
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s), Cable(s), Accessories
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: CEC1736
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+36379.89 грн
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MSMCJLCE6.5AE3/TR MSMCJLCE6.5AE3/TR Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 6.5VWM 11.2VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 100A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMCJ (DO-214AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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MSMCJLCE6.5AE3/TR MSMCJLCE6.5AE3/TR Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 6.5VWM 11.2VC SMCJ
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 100A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMCJ (DO-214AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
1+397.49 грн
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MSMCJLCE33AE3/TR MSMCJLCE33AE3/TR Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 33VWM 53.3VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 28.1A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMCJ (DO-214AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
300+363.77 грн
Мінімальне замовлення: 300
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MIC284-0BMMTR MIC284-0BMMTR Microchip Technology MCRLS03558-1.pdf?t.download=true&u=5oefqw Description: TWO-ZONE THERMAL SUPERVISOR
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
413+53.58 грн
Мінімальне замовлення: 413
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JANKCA1N967B Microchip Technology Description: VOLTAGE REGULATOR
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1N967D 1N967D Microchip Technology Description: DIODE ZENER 18V 500MW DO7
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
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JANHCA1N967D Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±1%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: Die
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
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CD965A Microchip Technology Description: DIODE ZENER 15V 500MW DIE
Packaging: Bulk
Tolerance: ±10%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: Die
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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CD965B CD965B Microchip Technology 8385-cd957b-cd986b-datasheet Description: DIODE ZENER 15V 500MW DIE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: Die
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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M15KP90A M15KP90A Microchip Technology 9460-rf01011-m15kp-rev-e Description: TVS DIODE 90VWM 146VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
на замовлення 87 шт:
термін постачання 21-31 дні (днів)
1+1814.82 грн
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MIC841NYC5-T5 MIC841NYC5-T5 Microchip Technology 20005758A.pdf Description: IC COMPARATOR 1 W/VOLT REF SC70
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: with Voltage Reference
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.5V ~ 5.5V
Supplier Device Package: SC-70-5
Propagation Delay (Max): 12µs
Current - Quiescent (Max): 3µA
Current - Output (Typ): 20mA
Hysteresis: 20mV
Part Status: Active
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+43.82 грн
Мінімальне замовлення: 500
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MIC841NYC5-T5 MIC841NYC5-T5 Microchip Technology 20005758A.pdf Description: IC COMPARATOR 1 W/VOLT REF SC70
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: with Voltage Reference
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.5V ~ 5.5V
Supplier Device Package: SC-70-5
Propagation Delay (Max): 12µs
Current - Quiescent (Max): 3µA
Current - Output (Typ): 20mA
Hysteresis: 20mV
Part Status: Active
на замовлення 583 шт:
термін постачання 21-31 дні (днів)
6+59.42 грн
25+47.39 грн
100+42.20 грн
Мінімальне замовлення: 6
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MCP87090T-U/MF MCP87090T-U/MF Microchip Technology 20002332B.pdf Description: MOSFET N-CH 25V 64A 8PDFN
на замовлення 1340 шт:
термін постачання 21-31 дні (днів)
9+36.94 грн
25+28.98 грн
100+26.86 грн
Мінімальне замовлення: 9
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MQ2N4392UB MQ2N4392UB Microchip Technology Description: JFET N-CH UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
FET Type: N-Channel
Supplier Device Package: UB
Part Status: Active
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MQ2N4392 MQ2N4392 Microchip Technology Description: JFET N-CH TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
FET Type: N-Channel
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
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MQ2N4392UB/TR Microchip Technology Description: JFET
Packaging: Tape & Reel (TR)
Part Status: Active
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JANTX1N5419 JANTX1N5419 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 500V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Qualification: MIL-PRF-19500/411
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1N5419E3/TR 1N5419E3/TR Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 500V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
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JANS1N5419US JANS1N5419US Microchip Technology Description: DIODE GEN PURP 500V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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JANTXV1N5419/TR JANTXV1N5419/TR Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 500V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Qualification: MIL-PRF-19500/411
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JANS1N5419/TR JANS1N5419/TR Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 500V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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JANS1N5419 JANS1N5419 Microchip Technology Description: DIODE GEN PURP 500V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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1N5419US/TR 1N5419US/TR Microchip Technology Description: DIODE GEN PURP 500V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
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JANTX1N5419/TR JANTX1N5419/TR Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 500V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Qualification: MIL-PRF-19500/411
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JANTXV1N5419 JANTXV1N5419 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 500V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Qualification: MIL-PRF-19500/411
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ATEVK-MXT336T-B ATEVK-MXT336T-B Microchip Technology maXTouch-T-brochure.pdf Description: EVAL BOARD FOR MXT336T
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ATMXT336T-MAU Microchip Technology maXTouch-T-brochure.pdf Description: IC TOUCHSCREEN CONTRL 336 NODE
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MA15KP170CAe3 MA15KP170CAe3 Microchip Technology 9460-rf01011-m15kp-rev-e Description: TVS DIODE 170VWM 275VC DO204AR
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1N5524C/TR
1N5524C/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
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1N5524D/TR
1N5524D/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
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1N5524DUR-1/TR
1N5524DUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
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TC2574-3.3VPA MCHPS00515-1.pdf?t.download=true&u=5oefqw
TC2574-3.3VPA
Виробник: Microchip Technology
Description: 0.5A STEP-DOWN SWITCHING REGULAT
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 8-DIP
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
на замовлення 948 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
272+88.33 грн
Мінімальне замовлення: 272
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PIC16F18124T-I/ST PIC16F18114-15-24-25-44-45-Microcontroller-Data-Sheet-40002404A.pdf
Виробник: Microchip Technology
Description: 7KB FLASH, 512B RAM, 128B EEPROM
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PIC16F18124T-I/ST PIC16F18114-15-24-25-44-45-Microcontroller-Data-Sheet-40002404A.pdf
Виробник: Microchip Technology
Description: 7KB FLASH, 512B RAM, 128B EEPROM
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1N5306/TR
1N5306/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.42MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.42mA
Voltage - Limiting (Max): 1.95V
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MCP1702T-5102E/CB MCP1702-Data-Sheet-DS20002008.pdf
MCP1702T-5102E/CB
Виробник: Microchip Technology
Description: IC REG LIN 5.1V 250MA SOT23A-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23A-3
Voltage - Output (Min/Fixed): 5.1V
Part Status: Active
PSRR: 44dB (100Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+34.59 грн
Мінімальне замовлення: 3000
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MCP1702T-5102E/CB MCP1702-Data-Sheet-DS20002008.pdf
MCP1702T-5102E/CB
Виробник: Microchip Technology
Description: IC REG LIN 5.1V 250MA SOT23A-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23A-3
Voltage - Output (Min/Fixed): 5.1V
Part Status: Active
PSRR: 44dB (100Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 5925 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.77 грн
25+36.72 грн
100+33.31 грн
Мінімальне замовлення: 8
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JANTX2N3637UB/TR
JANTX2N3637UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSR2N3637UB
JANSR2N3637UB
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANS2N3637L
JANS2N3637L
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANS2N3637UB/TR
JANS2N3637UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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MNS2N3637UBP/TR
MNS2N3637UBP/TR
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANKCAR2N3637
JANKCAR2N3637
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTXV2N3637P
JANTXV2N3637P
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
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JANSR2N3637UB/TR
JANSR2N3637UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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MSR2N3637
MSR2N3637
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
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JANKCA2N3637 14809-military-qualified-die-chip
JANKCA2N3637
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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MNS2N3637UBP
MNS2N3637UBP
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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MSR2N3637UB
MSR2N3637UB
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
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JANTXV2N3637UB/TR
JANTXV2N3637UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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MSR2N3637UB/TR
MSR2N3637UB/TR
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
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JANSR2N3637
JANSR2N3637
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSR2N3637L
JANSR2N3637L
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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2N3637UB/TR
2N3637UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
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LXS201-23-2/TR
LXS201-23-2/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 3V 250MW SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: SOT-23-3
Current - Max: 1 A
Power Dissipation (Max): 250 mW
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LXS201-23-2/TR
LXS201-23-2/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 3V 250MW SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: SOT-23-3
Current - Max: 1 A
Power Dissipation (Max): 250 mW
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AT75C310-Q160 AT75C310%20Summary.pdf
AT75C310-Q160
Виробник: Microchip Technology
Description: IC SIAP ARM/THUMB OAKDSP 160QFP
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U3280M-NFBG3Y U3280M.pdf
Виробник: Microchip Technology
Description: IC RFID TRANSP 100-150KHZ 16SSOP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Frequency: 100kHz ~ 150kHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6.5V
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1N1401 1N3288-1N3297.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 100A DO205AA
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EV19K07A CEC1736_Dev_Board_Users_Guide.pdf
EV19K07A
Виробник: Microchip Technology
Description: CEC1736 DEVELOPMENT BOARD
Packaging: Box
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s), Cable(s), Accessories
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: CEC1736
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+36379.89 грн
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MSMCJLCE6.5AE3/TR 10562-msmclce-datasheet
MSMCJLCE6.5AE3/TR
Виробник: Microchip Technology
Description: TVS DIODE 6.5VWM 11.2VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 100A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMCJ (DO-214AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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MSMCJLCE6.5AE3/TR 10562-msmclce-datasheet
MSMCJLCE6.5AE3/TR
Виробник: Microchip Technology
Description: TVS DIODE 6.5VWM 11.2VC SMCJ
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 100A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMCJ (DO-214AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+397.49 грн
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MSMCJLCE33AE3/TR 10562-msmclce-datasheet
MSMCJLCE33AE3/TR
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 28.1A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMCJ (DO-214AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+363.77 грн
Мінімальне замовлення: 300
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MIC284-0BMMTR MCRLS03558-1.pdf?t.download=true&u=5oefqw
MIC284-0BMMTR
Виробник: Microchip Technology
Description: TWO-ZONE THERMAL SUPERVISOR
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
413+53.58 грн
Мінімальне замовлення: 413
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JANKCA1N967B
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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1N967D
1N967D
Виробник: Microchip Technology
Description: DIODE ZENER 18V 500MW DO7
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
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JANHCA1N967D
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±1%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: Die
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
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CD965A
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DIE
Packaging: Bulk
Tolerance: ±10%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: Die
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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CD965B 8385-cd957b-cd986b-datasheet
CD965B
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DIE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: Die
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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M15KP90A 9460-rf01011-m15kp-rev-e
M15KP90A
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
на замовлення 87 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1814.82 грн
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MIC841NYC5-T5 20005758A.pdf
MIC841NYC5-T5
Виробник: Microchip Technology
Description: IC COMPARATOR 1 W/VOLT REF SC70
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: with Voltage Reference
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.5V ~ 5.5V
Supplier Device Package: SC-70-5
Propagation Delay (Max): 12µs
Current - Quiescent (Max): 3µA
Current - Output (Typ): 20mA
Hysteresis: 20mV
Part Status: Active
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+43.82 грн
Мінімальне замовлення: 500
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MIC841NYC5-T5 20005758A.pdf
MIC841NYC5-T5
Виробник: Microchip Technology
Description: IC COMPARATOR 1 W/VOLT REF SC70
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: with Voltage Reference
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.5V ~ 5.5V
Supplier Device Package: SC-70-5
Propagation Delay (Max): 12µs
Current - Quiescent (Max): 3µA
Current - Output (Typ): 20mA
Hysteresis: 20mV
Part Status: Active
на замовлення 583 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.42 грн
25+47.39 грн
100+42.20 грн
Мінімальне замовлення: 6
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MCP87090T-U/MF 20002332B.pdf
MCP87090T-U/MF
Виробник: Microchip Technology
Description: MOSFET N-CH 25V 64A 8PDFN
на замовлення 1340 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+36.94 грн
25+28.98 грн
100+26.86 грн
Мінімальне замовлення: 9
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MQ2N4392UB
MQ2N4392UB
Виробник: Microchip Technology
Description: JFET N-CH UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
FET Type: N-Channel
Supplier Device Package: UB
Part Status: Active
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MQ2N4392
MQ2N4392
Виробник: Microchip Technology
Description: JFET N-CH TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
FET Type: N-Channel
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
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MQ2N4392UB/TR
Виробник: Microchip Technology
Description: JFET
Packaging: Tape & Reel (TR)
Part Status: Active
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JANTX1N5419 124360-lds-0231-datasheet
JANTX1N5419
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Qualification: MIL-PRF-19500/411
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1N5419E3/TR 124360-lds-0231-datasheet
1N5419E3/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
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JANS1N5419US
JANS1N5419US
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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JANTXV1N5419/TR 124360-lds-0231-datasheet
JANTXV1N5419/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Qualification: MIL-PRF-19500/411
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JANS1N5419/TR 124360-lds-0231-datasheet
JANS1N5419/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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JANS1N5419
JANS1N5419
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Qualification: MIL-PRF-19500/411
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1N5419US/TR
1N5419US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
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JANTX1N5419/TR 124360-lds-0231-datasheet
JANTX1N5419/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Qualification: MIL-PRF-19500/411
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JANTXV1N5419 124360-lds-0231-datasheet
JANTXV1N5419
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Qualification: MIL-PRF-19500/411
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ATEVK-MXT336T-B maXTouch-T-brochure.pdf
ATEVK-MXT336T-B
Виробник: Microchip Technology
Description: EVAL BOARD FOR MXT336T
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ATMXT336T-MAU maXTouch-T-brochure.pdf
Виробник: Microchip Technology
Description: IC TOUCHSCREEN CONTRL 336 NODE
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MA15KP170CAe3 9460-rf01011-m15kp-rev-e
MA15KP170CAe3
Виробник: Microchip Technology
Description: TVS DIODE 170VWM 275VC DO204AR
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