Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (358216) > Сторінка 1669 з 5971
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||
---|---|---|---|---|---|---|---|---|---|---|---|
UFR3140E3 | Microchip Technology |
Description: DIODE GEN PURP 400V 30A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 115pF @ 10V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
UFR3120PF | Microchip Technology |
Description: DIODE GEN PURP 200V 30A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 115pF @ 10V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
![]() |
UFR3140 | Microchip Technology |
![]() Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 115pF @ 10V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
UFR3130PF | Microchip Technology |
![]() Packaging: Bulk Package / Case: DO-208AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 115pF @ 10V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: DO-21 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
![]() |
UFR3130 | Microchip Technology |
Description: DIODE GEN PURP 300V 30A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 115pF @ 10V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
UFR3120 | Microchip Technology |
Description: DIODE GEN PURP 200V 30A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 115pF @ 10V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
UFR3130R | Microchip Technology |
Description: DIODE GEN PURP 300V 30A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 115pF @ 10V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
1N4622 | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO7 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-7 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JAN1N4622C-1/TR | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO204AH Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANS1N4622D-1 | Microchip Technology |
Description: ZENER DIODE Packaging: Bulk Tolerance: ±1% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANTXV1N4622C-1/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
JANHCA1N4622D | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Tolerance: ±1% Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: Die Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
JAN1N4622-1/TR | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO204AH Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANS1N4622-1 | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO204AH Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
JANHCA1N4622 | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO7 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-7 (DO-204AA) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
![]() |
JAN1N4622DUR-1/TR | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO213AA Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANS1N4622UR-1 | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO213AA Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TA) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANS1N4622-1/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1.65 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANTXV1N4622DUR-1/TR | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO213AA Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANTXV1N4622UR-1/TR | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO213AA Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANTX1N4622UR-1/TR | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO213AA Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JAN1N4622D-1/TR | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO204AH Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANS1N4622D-1/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1.65 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANS1N4622DUR-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1.65 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
JANHCA1N4622C | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Tolerance: ±2% Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: Die Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
JANTXV1N4622-1/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANTXV1N4622CUR-1/TR | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO213AA Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JAN1N4622CUR-1/TR | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO213AA Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANS1N4622DUR-1 | Microchip Technology |
Description: ZENER DIODE Packaging: Bulk Tolerance: ±1% Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANS1N4622C-1 | Microchip Technology |
Description: ZENER DIODE Packaging: Bulk Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANTXV1N4622D-1/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
JANKCA1N4622D | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Tolerance: ±1% Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: Die Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
![]() |
JANS1N4622UR-1/TR | Microchip Technology |
Description: DIODE ZENER 3.9V 500MW DO213AA Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TA) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1.65 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANS1N4622CUR-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1.65 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
JANKCA1N4622 | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-7 (DO-204AA) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
![]() |
JANS1N4622CUR-1 | Microchip Technology |
Description: ZENER DIODE Packaging: Bulk Tolerance: ±2% Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
1N4686/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Supplier Device Package: DO-7 (DO-204AA) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
VT-840-HFE-106B-38M4000000 | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
VT-860-HFE-106C-20M0000000 | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
MS8150-P2613 | Microchip Technology |
![]() Packaging: Tray Package / Case: Die Diode Type: Schottky - Single Operating Temperature: -55°C ~ 125°C Voltage - Peak Reverse (Max): 3V Supplier Device Package: Chip Part Status: Active Current - Max: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
MS8151-P2613 | Microchip Technology |
Description: GAAS SCHOTTKY NON HERMETIC FLIP Packaging: Tray Package / Case: Die Diode Type: Schottky - Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 60pF @ 0V, 1MHz Resistance @ If, F: 9Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 3V Supplier Device Package: Chip Part Status: Active Current - Max: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
MS8150-6498 | Microchip Technology |
Description: GAAS SCHOTTKY NON HERMETIC FLIP Packaging: Tray Package / Case: Die Supplier Device Package: Chip Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
JAN1N6620US/TR | Microchip Technology |
Description: DIODE GEN PURP 220V 2A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 220 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 220 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANTX1N6081 | Microchip Technology |
![]() Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 155°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V Grade: Military Qualification: MIL-PRF-19500/503 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANS1N6620 | Microchip Technology |
Description: DIODE GEN PURP 200V 2A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JAN1N6621/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 440 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 440 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JAN1N6620/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 220 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 220 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANTX1N6621/TR | Microchip Technology |
Description: DIODE GEN PURP 440V 2A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 440 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 440 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JAN1N6620US | Microchip Technology |
![]() Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 220 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 220 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANTX1N6621US/TR | Microchip Technology |
Description: DIODE GEN PURP 440V 2A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 440 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 440 V Grade: Military Qualification: MIL-PRF-19500/585 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JAN1N6622/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 660 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANTX1N6622/TR | Microchip Technology |
Description: DIODE GEN PURP 660V 2A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 660 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JANTX1N6622 | Microchip Technology |
![]() Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 660 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JAN1N6621 | Microchip Technology |
![]() Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 440 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 440 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
JANTX1N6081/TR | Microchip Technology |
Description: DIODE STANDARD 150V 2A APAK Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 155°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V Grade: Military Qualification: MIL-PRF-19500/503 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
JAN1N6620 | Microchip Technology |
![]() Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 220 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 220 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
![]() |
ATMEGA8A-AU | Microchip Technology |
![]() ![]() Packaging: Tray Package / Case: 32-TQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (4K x 16) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 512 x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 32-TQFP (7x7) Part Status: Active Number of I/O: 23 DigiKey Programmable: Not Verified |
на замовлення 1528 шт: термін постачання 21-31 дні (днів) |
|
||||||
CD5296 | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Part Status: Active Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.001mA Voltage - Limiting (Max): 1.29V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
![]() |
1N649-1/TR | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 400mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 50 nA @ 600 V |
на замовлення 355 шт: термін постачання 21-31 дні (днів) |
|
||||||
![]() |
1N649-1/TR | Microchip Technology |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 400mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 50 nA @ 600 V |
на замовлення 574 шт: термін постачання 21-31 дні (днів) |
|
UFR3140E3 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Description: DIODE GEN PURP 400V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
UFR3120PF |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Description: DIODE GEN PURP 200V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
UFR3140 |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 30A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Description: DIODE GEN PURP 400V 30A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
UFR3130PF |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 30A DO21
Packaging: Bulk
Package / Case: DO-208AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-21
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 300 V
Description: DIODE GEN PURP 300V 30A DO21
Packaging: Bulk
Package / Case: DO-208AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-21
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
UFR3130 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 30A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Description: DIODE GEN PURP 300V 30A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
товару немає в наявності
В кошику
од. на суму грн.
UFR3120 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 30A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Description: DIODE GEN PURP 200V 30A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
товару немає в наявності
В кошику
од. на суму грн.
UFR3130R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 30A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Description: DIODE GEN PURP 300V 30A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
товару немає в наявності
В кошику
од. на суму грн.
1N4622 |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER 3.9V 500MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
JAN1N4622C-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JANS1N4622D-1 |
Виробник: Microchip Technology
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
JANTXV1N4622C-1/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JANHCA1N4622D |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±1%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: Die
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±1%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: Die
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
JAN1N4622-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JANS1N4622-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JANHCA1N4622 |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO7
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-7 (DO-204AA)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO7
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-7 (DO-204AA)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JAN1N4622DUR-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JANS1N4622UR-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JANS1N4622-1/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1.65 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1.65 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JANTXV1N4622DUR-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JANTXV1N4622UR-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N4622UR-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JAN1N4622D-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JANS1N4622D-1/TR |
![]() |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1.65 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1.65 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
JANS1N4622DUR-1/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1.65 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1.65 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
JANHCA1N4622C |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±2%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: Die
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±2%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: Die
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
JANTXV1N4622-1/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JANTXV1N4622CUR-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JAN1N4622CUR-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JANS1N4622DUR-1 |
Виробник: Microchip Technology
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
JANS1N4622C-1 |
Виробник: Microchip Technology
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
JANTXV1N4622D-1/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JANKCA1N4622D |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±1%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: Die
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±1%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: Die
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
JANS1N4622UR-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1.65 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 3.9V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TA)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1.65 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
В кошику
од. на суму грн.
JANS1N4622CUR-1/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1.65 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1.65 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
JANKCA1N4622 |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-7 (DO-204AA)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-7 (DO-204AA)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
JANS1N4622CUR-1 |
Виробник: Microchip Technology
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
1N4686/TR |
![]() |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: DO-7 (DO-204AA)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: DO-7 (DO-204AA)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
VT-840-HFE-106B-38M4000000 |
![]() |
Виробник: Microchip Technology
Description: TCXO +2.5 VDC +/-10% CLIPPED SIN
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TCXO +2.5 VDC +/-10% CLIPPED SIN
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
VT-860-HFE-106C-20M0000000 |
![]() |
Виробник: Microchip Technology
Description: TCXO +2.5 VDC +/-5% CLIPPED SINE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TCXO +2.5 VDC +/-5% CLIPPED SINE
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
MS8150-P2613 |
![]() |
Виробник: Microchip Technology
Description: GAAS SCHOTTKY NON HERMETIC FLIP
Packaging: Tray
Package / Case: Die
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: Chip
Part Status: Active
Current - Max: 15 mA
Description: GAAS SCHOTTKY NON HERMETIC FLIP
Packaging: Tray
Package / Case: Die
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: Chip
Part Status: Active
Current - Max: 15 mA
товару немає в наявності
В кошику
од. на суму грн.
MS8151-P2613 |
Виробник: Microchip Technology
Description: GAAS SCHOTTKY NON HERMETIC FLIP
Packaging: Tray
Package / Case: Die
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Resistance @ If, F: 9Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: Chip
Part Status: Active
Current - Max: 15 mA
Description: GAAS SCHOTTKY NON HERMETIC FLIP
Packaging: Tray
Package / Case: Die
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Resistance @ If, F: 9Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: Chip
Part Status: Active
Current - Max: 15 mA
товару немає в наявності
В кошику
од. на суму грн.
MS8150-6498 |
Виробник: Microchip Technology
Description: GAAS SCHOTTKY NON HERMETIC FLIP
Packaging: Tray
Package / Case: Die
Supplier Device Package: Chip
Part Status: Active
Description: GAAS SCHOTTKY NON HERMETIC FLIP
Packaging: Tray
Package / Case: Die
Supplier Device Package: Chip
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
JAN1N6620US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 220V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Description: DIODE GEN PURP 220V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N6081 |
![]() |
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 2A APAK
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 155°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/503
Description: DIODE STANDARD 150V 2A APAK
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 155°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/503
товару немає в наявності
В кошику
од. на суму грн.
JANS1N6620 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Description: DIODE GEN PURP 200V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
JAN1N6621/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 440V 2A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Description: DIODE GEN PURP 440V 2A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
товару немає в наявності
В кошику
од. на суму грн.
JAN1N6620/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 220V 2A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Description: DIODE GEN PURP 220V 2A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N6621/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 440V 2A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Description: DIODE GEN PURP 440V 2A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
товару немає в наявності
В кошику
од. на суму грн.
JAN1N6620US |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 220V 2A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Description: DIODE GEN PURP 220V 2A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N6621US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 440V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Grade: Military
Qualification: MIL-PRF-19500/585
Description: DIODE GEN PURP 440V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Grade: Military
Qualification: MIL-PRF-19500/585
товару немає в наявності
В кошику
од. на суму грн.
JAN1N6622/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 2A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Description: DIODE GEN PURP 660V 2A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N6622/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 2A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Description: DIODE GEN PURP 660V 2A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N6622 |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 2A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Description: DIODE GEN PURP 660V 2A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
товару немає в наявності
В кошику
од. на суму грн.
JAN1N6621 |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 440V 2A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Description: DIODE GEN PURP 440V 2A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
товару немає в наявності
В кошику
од. на суму грн.
JANTX1N6081/TR |
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 2A APAK
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 155°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/503
Description: DIODE STANDARD 150V 2A APAK
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 155°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/503
товару немає в наявності
В кошику
од. на суму грн.
JAN1N6620 |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 220V 2A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Description: DIODE GEN PURP 220V 2A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
товару немає в наявності
В кошику
од. на суму грн.
ATMEGA8A-AU | ![]() |
![]() |
Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-TQFP (7x7)
Part Status: Active
Number of I/O: 23
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-TQFP (7x7)
Part Status: Active
Number of I/O: 23
DigiKey Programmable: Not Verified
на замовлення 1528 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 173.10 грн |
25+ | 152.46 грн |
100+ | 138.67 грн |
CD5296 |
![]() |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.001MA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Part Status: Active
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.001mA
Voltage - Limiting (Max): 1.29V
Description: DIODE CUR REG 100V 1.001MA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Part Status: Active
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.001mA
Voltage - Limiting (Max): 1.29V
товару немає в наявності
В кошику
од. на суму грн.
1N649-1/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 400MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 600 V
Description: DIODE GEN PURP 600V 400MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 600 V
на замовлення 355 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
355+ | 169.38 грн |
1N649-1/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 400MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 600 V
Description: DIODE GEN PURP 600V 400MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 600 V
на замовлення 574 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 182.42 грн |
100+ | 163.11 грн |