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MSR2N3501UB/TR MSR2N3501UB/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
100+7083.67 грн
Мінімальне замовлення: 100
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MSR2N3501UB/TR MSR2N3501UB/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Cut Tape (CT)
Part Status: Active
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+7628.63 грн
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1N4715UR-1/TR 1N4715UR-1/TR Microchip Technology 1N4678UR-1-1N4717UR-1.pdf Description: DIODE ZENER 36V 500MW DO213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
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1N4715UR-1/TR 1N4715UR-1/TR Microchip Technology 1N4678UR-1-1N4717UR-1.pdf Description: DIODE ZENER 36V 500MW DO213AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
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1N4000 1N4000 Microchip Technology 1N2970-1N3015B_1N3993-1N4000A.pdf Description: DIODE ZENER 7.5V 10W DO4
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: DO-4 (DO-203AA)
Part Status: Active
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
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1N4000A 1N4000A Microchip Technology 1N2970-1N3015B_1N3993-1N4000A.pdf Description: DIODE ZENER 7.5V 10W DO4
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 1.3 Ohms
Supplier Device Package: DO-4 (DO-203AA)
Part Status: Active
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
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1N4729AUR/TR 1N4729AUR/TR Microchip Technology 1N4728UR-1N4764AUR.pdf Description: DIODE ZENER 3.6V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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1N4729AUR/TR 1N4729AUR/TR Microchip Technology 1N4728UR-1N4764AUR.pdf Description: DIODE ZENER 3.6V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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JANTV2N6437 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
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2N6437 2N6437 Microchip Technology Description: TRANS PNP 100V 25A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
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JANTXV2N6437 Microchip Technology Description: TRANS PNP 100V 25A
Packaging: Bulk
Part Status: Active
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JAN2N6437 Microchip Technology Description: TRANS PNP 100V 25A
Packaging: Bulk
Part Status: Active
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2N6436 2N6436 Microchip Technology Description: PNP TRANSISTOR
Packaging: Bulk
Part Status: Active
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2N6331 2N6331 Microchip Technology Description: TRANS PNP 100V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 W
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2N6339 2N6339 Microchip Technology 2N6338-ssi.pdf Description: NPN TRANSISTOR
Packaging: Bulk
Part Status: Active
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2N6330 2N6330 Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Part Status: Active
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2N6338 2N6338 Microchip Technology 2N6338-ssi.pdf 2N6338.pdf 2n6338-d.pdf Description: NPN TRANSISTOR
Packaging: Bulk
Part Status: Active
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DSC1123CL2-156.2500T DSC1123CL2-156.2500T Microchip Technology MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC 156.25MHZ LVDS 25PPM 3.
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Absolute Pull Range (APR): ±25ppm
Frequency: 156.25 MHz
Base Resonator: MEMS
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DSC1103CL2-125.0000 DSC1103CL2-125.0000 Microchip Technology MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC LOW POWER LVDS -40C-105
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Absolute Pull Range (APR): ±25ppm
Frequency: 125 MHz
Base Resonator: MEMS
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DSA1123CL2-135.0000TVAO DSA1123CL2-135.0000TVAO Microchip Technology DSA1103-23-Low-Jitter-Precision-LVDS-Oscillator-for-Automotive-20005891A.pdf Description: MEMS OSC AUTO LOWPWR -40C-105C
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: SO (SAW)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 135 MHz
Base Resonator: MEMS
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DSA1123CL2-150.0000TVAO DSA1123CL2-150.0000TVAO Microchip Technology DSA1103-23-Low-Jitter-Precision-LVDS-Oscillator-for-Automotive-20005891A.pdf Description: MEMS OSC AUTO LOWPWR -40C-105C
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: SO (SAW)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 150 MHz
Base Resonator: MEMS
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DSC1123CL2-156.2500 DSC1123CL2-156.2500 Microchip Technology MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC 156.25MHZ LVDS 25PPM 3.
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Absolute Pull Range (APR): ±25ppm
Frequency: 156.25 MHz
Base Resonator: MEMS
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DSA1223CL2-125M0000VAO DSA1223CL2-125M0000VAO Microchip Technology Description: OSC MEMS AUTOMOTIVE SMD
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 32mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 125 MHz
Base Resonator: MEMS
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DSA1123CL2-150.0000VAO DSA1123CL2-150.0000VAO Microchip Technology DSA1103-23-Low-Jitter-Precision-LVDS-Oscillator-for-Automotive-20005891A.pdf Description: MEMS OSC AUTO LOWPWR -40C-105C
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: SO (SAW)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 150 MHz
Base Resonator: MEMS
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DSC1103CL2-125.0000T DSC1103CL2-125.0000T Microchip Technology MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw Description: MEMS OSC LOW POWER LVDS -40C-105
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Absolute Pull Range (APR): ±25ppm
Frequency: 125 MHz
Base Resonator: MEMS
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DSA1123CL2-135.0000VAO DSA1123CL2-135.0000VAO Microchip Technology DSA1103-23-Low-Jitter-Precision-LVDS-Oscillator-for-Automotive-20005891A.pdf Description: MEMS OSC AUTO LOWPWR -40C-105C
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: SO (SAW)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 135 MHz
Base Resonator: MEMS
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DSA1223CL2-125M0000TVAO DSA1223CL2-125M0000TVAO Microchip Technology Description: OSC MEMS AUTOMOTIVE SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 32mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 125 MHz
Base Resonator: MEMS
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1N3595AUS/TR 1N3595AUS/TR Microchip Technology Description: DIODE STD 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
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1N3595AUS/TR 1N3595AUS/TR Microchip Technology Description: DIODE STD 125V 150MA DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
1+707.47 грн
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1N3595AUR-1/TR 1N3595AUR-1/TR Microchip Technology 1N3595AUR-1.pdf Description: DIODE STD 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
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1N3595AUR-1/TR 1N3595AUR-1/TR Microchip Technology 1N3595AUR-1.pdf Description: DIODE STD 125V 150MA DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
на замовлення 85 шт:
термін постачання 21-31 дні (днів)
1+766.36 грн
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DSC6301HI2FB-012.0000T Microchip Technology DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf Description: MEMS CMOS OSC SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Spread Spectrum Bandwidth: ±2.50%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 12 MHz
Base Resonator: MEMS
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DSC6301HI2FB-012.0000 Microchip Technology DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf Description: MEMS CMOS OSC SMD
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Spread Spectrum Bandwidth: ±2.50%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 12 MHz
Base Resonator: MEMS
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MSCSM120DUM31CTBL1NG Microchip Technology Description: PM-MOSFET-SIC-SBD-BL1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 310W
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 79A
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Part Status: Active
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MSCSM120DUM31TBL1NG Microchip Technology MSCSM120DUM31TBL1NG-SiC-MOSFET-module-DS00004650.pdf Description: SIC 2N-CH 1200V 79A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 310W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 79A
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
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MPS4102-013S Microchip Technology Description: SI PIN NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.02pF @ 50V, 1GHz
Resistance @ If, F: 2.5Ohm @ 100mA, 1GHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: Chip
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 3 W
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JAN1N5711UB/TR JAN1N5711UB/TR Microchip Technology 1N5711UB-1N5712UB%2CCC%2CCA%2CD.pdf Description: DIODE SCHOTTKY 50V 33MA UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: MIL-PRF-19500/444
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ATTINY45-20MU ATTINY45-20MU Microchip Technology Atmel-2586-AVR-8-bit-Microcontroller-ATtiny25-ATtiny45-ATtiny85_Datasheet-Summary.pdf Description: IC MCU 8BIT 4KB FLASH 20QFN
Packaging: Tray
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (2K x 16)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: USI
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-QFN-EP (4x4)
Part Status: Active
Number of I/O: 6
DigiKey Programmable: Verified
на замовлення 2413 шт:
термін постачання 21-31 дні (днів)
5+77.19 грн
25+69.40 грн
100+61.31 грн
Мінімальне замовлення: 5
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ATTINY45-20XU ATTINY45-20XU Microchip Technology Atmel-2586-AVR-8-bit-Microcontroller-ATtiny25-ATtiny45-ATtiny85_Datasheet-Summary.pdf Description: IC MCU 8BIT 4KB FLASH 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (2K x 16)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: USI
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of I/O: 6
DigiKey Programmable: Not Verified
на замовлення 539 шт:
термін постачання 21-31 дні (днів)
4+104.25 грн
25+92.30 грн
100+83.55 грн
Мінімальне замовлення: 4
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MSR2N2222AUA/TR MSR2N2222AUA/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSL2N2222AUBC/TR JANSL2N2222AUBC/TR Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSG2N2222AUBC JANSG2N2222AUBC Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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ATTINY25-20MF ATTINY25-20MF Microchip Technology Atmel-2586-AVR-8-bit-Microcontroller-ATtiny25-ATtiny45-ATtiny85_Datasheet-Summary.pdf Description: IC MCU 8BIT 2KB FLASH 20QFN
Packaging: Tray
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 2KB (1K x 16)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: USI
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-QFN-EP (4x4)
Part Status: Active
Number of I/O: 6
DigiKey Programmable: Not Verified
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ATTINY25-20SSH ATTINY25-20SSH Microchip Technology Atmel-2586-AVR-8-bit-Microcontroller-ATtiny25-ATtiny45-ATtiny85_Datasheet-Summary.pdf Description: IC MCU 8BIT 2KB FLASH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 2KB (1K x 16)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: USI
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of I/O: 6
DigiKey Programmable: Verified
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MAPLAD15KP11Ae3 MAPLAD15KP11Ae3 Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 11VWM 18.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 822A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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AAP661BS-M5A-GLF-TR AAP661BS-M5A-GLF-TR Microchip Technology 124171-aap661x-datasheet Description: IC AMP CLASS A MONO 5USMD
Packaging: Tape & Reel (TR)
Package / Case: 5-XFBGA
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class A
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Supplier Device Package: 5-µSMD (0.93x0.58)
Part Status: Active
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
3500+35.14 грн
Мінімальне замовлення: 3500
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AAP661BS-M5A-GLF-TR AAP661BS-M5A-GLF-TR Microchip Technology 124171-aap661x-datasheet Description: IC AMP CLASS A MONO 5USMD
Packaging: Cut Tape (CT)
Package / Case: 5-XFBGA
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class A
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Supplier Device Package: 5-µSMD (0.93x0.58)
Part Status: Active
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
7+51.73 грн
25+41.32 грн
100+38.46 грн
Мінімальне замовлення: 7
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JANS1N6116US JANS1N6116US Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 20.6VWM 37.4VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.4A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6165US 1N6165US Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 69.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6168US 1N6168US Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.1A
Voltage - Reverse Standoff (Typ): 91.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6169US 1N6169US Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.4A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 123.5V
Voltage - Clamping (Max) @ Ipp: 178.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6171US 1N6171US Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 121.6V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 218.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6120US 1N6120US Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 29.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.6V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6127US 1N6127US Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 56V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6140US 1N6140US Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6139US 1N6139US Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 5.7V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6119US 1N6119US Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A
Voltage - Reverse Standoff (Typ): 27.4V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6145US 1N6145US Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 9.9V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.35V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6156US 1N6156US Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 29.7V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6134US 1N6134US Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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MSR2N3501UB/TR
MSR2N3501UB/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+7083.67 грн
Мінімальне замовлення: 100
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MSR2N3501UB/TR
MSR2N3501UB/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Cut Tape (CT)
Part Status: Active
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7628.63 грн
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1N4715UR-1/TR 1N4678UR-1-1N4717UR-1.pdf
1N4715UR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 36V 500MW DO213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
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1N4715UR-1/TR 1N4678UR-1-1N4717UR-1.pdf
1N4715UR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 36V 500MW DO213AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
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1N4000 1N2970-1N3015B_1N3993-1N4000A.pdf
1N4000
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 10W DO4
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: DO-4 (DO-203AA)
Part Status: Active
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
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1N4000A 1N2970-1N3015B_1N3993-1N4000A.pdf
1N4000A
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 10W DO4
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 1.3 Ohms
Supplier Device Package: DO-4 (DO-203AA)
Part Status: Active
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
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1N4729AUR/TR 1N4728UR-1N4764AUR.pdf
1N4729AUR/TR
Виробник: Microchip Technology
Description: DIODE ZENER 3.6V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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1N4729AUR/TR 1N4728UR-1N4764AUR.pdf
1N4729AUR/TR
Виробник: Microchip Technology
Description: DIODE ZENER 3.6V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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JANTV2N6437
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
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2N6437
2N6437
Виробник: Microchip Technology
Description: TRANS PNP 100V 25A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
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JANTXV2N6437
Виробник: Microchip Technology
Description: TRANS PNP 100V 25A
Packaging: Bulk
Part Status: Active
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JAN2N6437
Виробник: Microchip Technology
Description: TRANS PNP 100V 25A
Packaging: Bulk
Part Status: Active
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2N6436
2N6436
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Part Status: Active
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2N6331
2N6331
Виробник: Microchip Technology
Description: TRANS PNP 100V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 W
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2N6339 2N6338-ssi.pdf
2N6339
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Part Status: Active
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2N6330
2N6330
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Part Status: Active
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2N6338 2N6338-ssi.pdf 2N6338.pdf 2n6338-d.pdf
2N6338
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Part Status: Active
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DSC1123CL2-156.2500T MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw
DSC1123CL2-156.2500T
Виробник: Microchip Technology
Description: MEMS OSC 156.25MHZ LVDS 25PPM 3.
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Absolute Pull Range (APR): ±25ppm
Frequency: 156.25 MHz
Base Resonator: MEMS
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DSC1103CL2-125.0000 MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw
DSC1103CL2-125.0000
Виробник: Microchip Technology
Description: MEMS OSC LOW POWER LVDS -40C-105
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Absolute Pull Range (APR): ±25ppm
Frequency: 125 MHz
Base Resonator: MEMS
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DSA1123CL2-135.0000TVAO DSA1103-23-Low-Jitter-Precision-LVDS-Oscillator-for-Automotive-20005891A.pdf
DSA1123CL2-135.0000TVAO
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-105C
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: SO (SAW)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 135 MHz
Base Resonator: MEMS
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DSA1123CL2-150.0000TVAO DSA1103-23-Low-Jitter-Precision-LVDS-Oscillator-for-Automotive-20005891A.pdf
DSA1123CL2-150.0000TVAO
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-105C
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: SO (SAW)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 150 MHz
Base Resonator: MEMS
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DSC1123CL2-156.2500 MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw
DSC1123CL2-156.2500
Виробник: Microchip Technology
Description: MEMS OSC 156.25MHZ LVDS 25PPM 3.
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Absolute Pull Range (APR): ±25ppm
Frequency: 156.25 MHz
Base Resonator: MEMS
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DSA1223CL2-125M0000VAO
DSA1223CL2-125M0000VAO
Виробник: Microchip Technology
Description: OSC MEMS AUTOMOTIVE SMD
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 32mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 125 MHz
Base Resonator: MEMS
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DSA1123CL2-150.0000VAO DSA1103-23-Low-Jitter-Precision-LVDS-Oscillator-for-Automotive-20005891A.pdf
DSA1123CL2-150.0000VAO
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-105C
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: SO (SAW)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 150 MHz
Base Resonator: MEMS
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DSC1103CL2-125.0000T MCHP-S-A0006612827-1.pdf?t.download=true&u=5oefqw
DSC1103CL2-125.0000T
Виробник: Microchip Technology
Description: MEMS OSC LOW POWER LVDS -40C-105
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Absolute Pull Range (APR): ±25ppm
Frequency: 125 MHz
Base Resonator: MEMS
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DSA1123CL2-135.0000VAO DSA1103-23-Low-Jitter-Precision-LVDS-Oscillator-for-Automotive-20005891A.pdf
DSA1123CL2-135.0000VAO
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-105C
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: SO (SAW)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 135 MHz
Base Resonator: MEMS
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DSA1223CL2-125M0000TVAO
DSA1223CL2-125M0000TVAO
Виробник: Microchip Technology
Description: OSC MEMS AUTOMOTIVE SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 32mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 125 MHz
Base Resonator: MEMS
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1N3595AUS/TR
1N3595AUS/TR
Виробник: Microchip Technology
Description: DIODE STD 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
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1N3595AUS/TR
1N3595AUS/TR
Виробник: Microchip Technology
Description: DIODE STD 125V 150MA DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+707.47 грн
В кошику  од. на суму  грн.
1N3595AUR-1/TR 1N3595AUR-1.pdf
1N3595AUR-1/TR
Виробник: Microchip Technology
Description: DIODE STD 125V 150MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
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1N3595AUR-1/TR 1N3595AUR-1.pdf
1N3595AUR-1/TR
Виробник: Microchip Technology
Description: DIODE STD 125V 150MA DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 nA @ 125 V
на замовлення 85 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+766.36 грн
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DSC6301HI2FB-012.0000T DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf
Виробник: Microchip Technology
Description: MEMS CMOS OSC SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Spread Spectrum Bandwidth: ±2.50%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 12 MHz
Base Resonator: MEMS
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DSC6301HI2FB-012.0000 DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf
Виробник: Microchip Technology
Description: MEMS CMOS OSC SMD
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Spread Spectrum Bandwidth: ±2.50%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 12 MHz
Base Resonator: MEMS
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MSCSM120DUM31CTBL1NG
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD-BL1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 310W
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 79A
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Part Status: Active
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MSCSM120DUM31TBL1NG MSCSM120DUM31TBL1NG-SiC-MOSFET-module-DS00004650.pdf
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 79A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 310W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 79A
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
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MPS4102-013S
Виробник: Microchip Technology
Description: SI PIN NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.02pF @ 50V, 1GHz
Resistance @ If, F: 2.5Ohm @ 100mA, 1GHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: Chip
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 3 W
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JAN1N5711UB/TR 1N5711UB-1N5712UB%2CCC%2CCA%2CD.pdf
JAN1N5711UB/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V 33MA UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: MIL-PRF-19500/444
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ATTINY45-20MU Atmel-2586-AVR-8-bit-Microcontroller-ATtiny25-ATtiny45-ATtiny85_Datasheet-Summary.pdf
ATTINY45-20MU
Виробник: Microchip Technology
Description: IC MCU 8BIT 4KB FLASH 20QFN
Packaging: Tray
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (2K x 16)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: USI
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-QFN-EP (4x4)
Part Status: Active
Number of I/O: 6
DigiKey Programmable: Verified
на замовлення 2413 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+77.19 грн
25+69.40 грн
100+61.31 грн
Мінімальне замовлення: 5
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ATTINY45-20XU Atmel-2586-AVR-8-bit-Microcontroller-ATtiny25-ATtiny45-ATtiny85_Datasheet-Summary.pdf
ATTINY45-20XU
Виробник: Microchip Technology
Description: IC MCU 8BIT 4KB FLASH 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (2K x 16)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: USI
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of I/O: 6
DigiKey Programmable: Not Verified
на замовлення 539 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+104.25 грн
25+92.30 грн
100+83.55 грн
Мінімальне замовлення: 4
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MSR2N2222AUA/TR
MSR2N2222AUA/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSL2N2222AUBC/TR
JANSL2N2222AUBC/TR
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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JANSG2N2222AUBC
JANSG2N2222AUBC
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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ATTINY25-20MF Atmel-2586-AVR-8-bit-Microcontroller-ATtiny25-ATtiny45-ATtiny85_Datasheet-Summary.pdf
ATTINY25-20MF
Виробник: Microchip Technology
Description: IC MCU 8BIT 2KB FLASH 20QFN
Packaging: Tray
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 2KB (1K x 16)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: USI
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-QFN-EP (4x4)
Part Status: Active
Number of I/O: 6
DigiKey Programmable: Not Verified
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ATTINY25-20SSH Atmel-2586-AVR-8-bit-Microcontroller-ATtiny25-ATtiny45-ATtiny85_Datasheet-Summary.pdf
ATTINY25-20SSH
Виробник: Microchip Technology
Description: IC MCU 8BIT 2KB FLASH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 2KB (1K x 16)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: USI
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of I/O: 6
DigiKey Programmable: Verified
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MAPLAD15KP11Ae3 9522-mplad15kp-datasheet
MAPLAD15KP11Ae3
Виробник: Microchip Technology
Description: TVS DIODE 11VWM 18.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 822A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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AAP661BS-M5A-GLF-TR 124171-aap661x-datasheet
AAP661BS-M5A-GLF-TR
Виробник: Microchip Technology
Description: IC AMP CLASS A MONO 5USMD
Packaging: Tape & Reel (TR)
Package / Case: 5-XFBGA
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class A
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Supplier Device Package: 5-µSMD (0.93x0.58)
Part Status: Active
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3500+35.14 грн
Мінімальне замовлення: 3500
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AAP661BS-M5A-GLF-TR 124171-aap661x-datasheet
AAP661BS-M5A-GLF-TR
Виробник: Microchip Technology
Description: IC AMP CLASS A MONO 5USMD
Packaging: Cut Tape (CT)
Package / Case: 5-XFBGA
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class A
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Supplier Device Package: 5-µSMD (0.93x0.58)
Part Status: Active
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+51.73 грн
25+41.32 грн
100+38.46 грн
Мінімальне замовлення: 7
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JANS1N6116US 127892-lds-0277-1-datasheet
JANS1N6116US
Виробник: Microchip Technology
Description: TVS DIODE 20.6VWM 37.4VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.4A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6165US 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6165US
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 69.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6168US 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6168US
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.1A
Voltage - Reverse Standoff (Typ): 91.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6169US 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6169US
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.4A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 123.5V
Voltage - Clamping (Max) @ Ipp: 178.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6171US 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6171US
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 121.6V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 218.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6120US 127892-lds-0277-1-datasheet
1N6120US
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 29.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.6V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6127US 127892-lds-0277-1-datasheet
1N6127US
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 56V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6140US 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6140US
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6139US 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6139US
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 5.7V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6119US 127892-lds-0277-1-datasheet
1N6119US
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A
Voltage - Reverse Standoff (Typ): 27.4V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6145US 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6145US
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 9.9V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.35V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6156US 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6156US
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 29.7V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6134US 127892-lds-0277-1-datasheet
1N6134US
Виробник: Microchip Technology
Description: TVS DIODE
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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