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MNS2N3501UBP MNS2N3501UBP Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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MNS2N3501UBP/TR MNS2N3501UBP/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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2N3501UB/TR 2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JAN2N3501UB/TR JAN2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANTX2N3501UB/TR JANTX2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANTXV2N3501UB/TR JANTXV2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANS2N3501UB JANS2N3501UB Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANS2N3501UB/TR JANS2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANS2N3501L JANS2N3501L Microchip Technology Description: TRANS NPN 150V 0.3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANSL2N3501UB/TR JANSL2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANSM2N3501UB/TR JANSM2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANSP2N3501UB/TR JANSP2N3501UB/TR Microchip Technology Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANSR2N3501 JANSR2N3501 Microchip Technology Description: TRANS NPN 150V 300MA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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2N3501U4/TR 2N3501U4/TR Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
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2N3501U4 2N3501U4 Microchip Technology Description: TRANS NPN 150V 0.3A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
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JANSR2N3501L JANSR2N3501L Microchip Technology Description: TRANS NPN 150V 0.3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JAN2N3501U4 JAN2N3501U4 Microchip Technology Description: TRANS NPN 150V 0.3A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANS2N3501U4 JANS2N3501U4 Microchip Technology Description: TRANS NPN 150V 0.3A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANTX2N3501U4 JANTX2N3501U4 Microchip Technology Description: TRANS NPN 150V 0.3A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANTXV2N3501U4 JANTXV2N3501U4 Microchip Technology Description: TRANS NPN 150V 0.3A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JAN2N3501U4/TR JAN2N3501U4/TR Microchip Technology Description: TRANS NPN 150V 0.3A U4
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANTX2N3501U4/TR JANTX2N3501U4/TR Microchip Technology Description: TRANS NPN 150V 0.3A U4
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANKCCR2N3501 JANKCCR2N3501 Microchip Technology Description: TRANS NPN 150V 0.3A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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USB3310C-CP-TR USB3310C-CP-TR Microchip Technology 00002363A.pdf Description: IC TRANSCEIVER HALF 1/1 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Receiver Hysteresis: 150 mV
Duplex: Half
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USB3310C-CP-TR USB3310C-CP-TR Microchip Technology 00002363A.pdf Description: IC TRANSCEIVER HALF 1/1 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Receiver Hysteresis: 150 mV
Duplex: Half
на замовлення 709 шт:
термін постачання 21-31 дні (днів)
3+115.83 грн
25+93.30 грн
100+84.95 грн
Мінімальне замовлення: 3
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USB3317C-GJ-TR USB3317C-GJ-TR Microchip Technology 3317.pdf Description: IC TXRX USB 2.0 FLEXPWR 25BGA
Packaging: Tape & Reel (TR)
Package / Case: 25-VFBGA
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Protocol: USB 2.0
Supplier Device Package: 25-BGA (3x3)
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USB3317C-GJ-TR USB3317C-GJ-TR Microchip Technology 3317.pdf Description: IC TXRX USB 2.0 FLEXPWR 25BGA
Packaging: Cut Tape (CT)
Package / Case: 25-VFBGA
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Protocol: USB 2.0
Supplier Device Package: 25-BGA (3x3)
на замовлення 2760 шт:
термін постачання 21-31 дні (днів)
3+137.89 грн
25+110.17 грн
100+100.55 грн
Мінімальне замовлення: 3
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VC-708-ECW-FNXN-160M000000 Microchip Technology vc708.pdf Description: ULTRA LOW JITTER XO +3.3 VDC +/-
Packaging: Tape & Reel (TR)
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MIC2039EYMT-TR MIC2039EYMT-TR Microchip Technology MIC2039-High-Accuracy-High-Side-Adjustable-Current-Limit-Power-Switch-20005540A.pdf Description: IC PWR SWITCH P-CHAN 1:1 6TDFN
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
на замовлення 3628 шт:
термін постачання 21-31 дні (днів)
5+70.13 грн
25+56.36 грн
100+50.60 грн
Мінімальне замовлення: 5
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MCP79411T-I/MNY MCP79411T-I/MNY Microchip Technology MCP79410-MCP79411-MCP79412-Battery-Backed%20I2C-RTCC-20002266J.pdf Description: IC RTC CLK/CALENDAR I2C 8TDFN
Packaging: Tape & Reel (TR)
Features: Alarm, Leap Year, Square Wave Output, SRAM, Unique ID
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64B, 1Kb
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Voltage - Supply, Battery: 1.3V ~ 5.5V
Current - Timekeeping (Max): 1.2µA @ 3.3V
DigiKey Programmable: Not Verified
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MCP79411T-I/MNY MCP79411T-I/MNY Microchip Technology MCP79410-MCP79411-MCP79412-Battery-Backed%20I2C-RTCC-20002266J.pdf Description: IC RTC CLK/CALENDAR I2C 8TDFN
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, Square Wave Output, SRAM, Unique ID
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64B, 1Kb
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Voltage - Supply, Battery: 1.3V ~ 5.5V
Current - Timekeeping (Max): 1.2µA @ 3.3V
DigiKey Programmable: Not Verified
на замовлення 2069 шт:
термін постачання 21-31 дні (днів)
4+89.83 грн
Мінімальне замовлення: 4
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AT90PWM81-16SN AT90PWM81-16SN Microchip Technology doc7734.pdf Description: IC MCU 8BIT 8KB FLASH 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Data Converters: A/D 8x10b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI
Peripherals: Brown-out Detect/Reset, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 16
DigiKey Programmable: Not Verified
на замовлення 830 шт:
термін постачання 21-31 дні (днів)
5+77.22 грн
25+67.83 грн
100+61.28 грн
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AT90PWM81-16SN AT90PWM81-16SN Microchip Technology doc7734.pdf Description: IC MCU 8BIT 8KB FLASH 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Data Converters: A/D 8x10b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI
Peripherals: Brown-out Detect/Reset, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 16
DigiKey Programmable: Not Verified
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VT-804-EAW-1070-40M0000000 Microchip Technology VT-804.pdf Description: TCXO +3.3 VDC +/-10% CMOS -10C T
Packaging: Tape & Reel (TR)
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UFS180GE3/TR13 Microchip Technology Description: DIODE GEN PURP 800V 1A SMBG
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMBG)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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VCC6-LCB-80M0000000 Microchip Technology 1243794-vcc6 Description: VCC6-LCB-80M0000000
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 60mA
Height - Seated (Max): 0.063" (1.60mm)
Frequency: 80 MHz
Base Resonator: Crystal
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MO-9200AE-D3E-EE50M0000000 Microchip Technology MO-9200A.pdf Description: MEMS BASED XO +3.3 VDC +/-5% LVD
Packaging: Tape & Reel (TR)
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MO-9200AE-D3E-HE87M3515420 Microchip Technology MO-9200A.pdf Description: MEMS BASED XO +2.5 VDC +/-5% LVD
Packaging: Tape & Reel (TR)
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MV-9450AE-D3E-EES500M000000 Microchip Technology Description: MEMS BASED VCXO +3.3 VDC LVDS -4
Packaging: Tape & Reel (TR)
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2N5303 2N5303 Microchip Technology 6088-2n5302-datasheet Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 4A, 20A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 2V
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 5 W
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CD4565 CD4565 Microchip Technology 8365-cd4565-cd4584a-datasheet Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 75°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Die
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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CD4565A CD4565A Microchip Technology 8365-cd4565-cd4584a-datasheet Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Die
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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MASMCJ48CA MASMCJ48CA Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 48VWM 77.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCJ48CAE3 MASMCJ48CAE3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 48VWM 77.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCJ48CAE3/TR MASMCJ48CAE3/TR Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 48VWM 77.4VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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DSA6011MA1B-032K768TVAO DSA6011MA1B-032K768TVAO Microchip Technology Description: MEMS OSCILLATOR, AUTOMOTIVE, LOW
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 32.768 kHz
Base Resonator: MEMS
Supplier Device Package: 4-VFLGA (2x1.6)
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DSA6011MA1B-032K768TVAO DSA6011MA1B-032K768TVAO Microchip Technology Description: MEMS OSCILLATOR, AUTOMOTIVE, LOW
Packaging: Cut Tape (CT)
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 32.768 kHz
Base Resonator: MEMS
Supplier Device Package: 4-VFLGA (2x1.6)
на замовлення 629 шт:
термін постачання 21-31 дні (днів)
5+66.19 грн
25+53.36 грн
100+51.70 грн
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JANTX1N4964 JANTX1N4964 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 18V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 4 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Qualification: MIL-PRF-19500/356
на замовлення 224 шт:
термін постачання 21-31 дні (днів)
1+445.20 грн
100+397.97 грн
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JAN1N4964 JAN1N4964 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 18V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 4 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Qualification: MIL-PRF-19500/356
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
1+407.38 грн
100+364.34 грн
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JAN1N4964/TR JAN1N4964/TR Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 4 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Qualification: MIL-PRF-19500/356
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JANTXV1N4964 JANTXV1N4964 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 18V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 4 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Qualification: MIL-PRF-19500/356
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JAN1N4964US/TR JAN1N4964US/TR Microchip Technology 124793-lds-0183-1-datasheet Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: E-MELF
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Qualification: MIL-PRF-19500/356
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JANTX1N4964US JANTX1N4964US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 18V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Qualification: MIL-PRF-19500/356
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JANTX1N4964US/TR JANTX1N4964US/TR Microchip Technology 1N4954US-1N4996US%2C%201N5968US-1N5969US%2C%201N6632US-1N6637US.pdf Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: E-MELF
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Qualification: MIL-PRF-19500/356
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CD0.5A40 CD0.5A40 Microchip Technology Description: DIODE SCHOTTKY 40V 200MA DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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CDLL0.5A40/TR Microchip Technology 131969-lds-0302-1-datasheet Description: DIODE SCHOTTKY 40V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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1N6845 1N6845 Microchip Technology Description: DIODE SCHOTTKY 45V 40A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 10V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: U3 (SMD-0.5)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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DSB0.5A40/TR DSB0.5A40/TR Microchip Technology Description: DIODE SCHOTTKY 40V 500MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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PIC16F18175-I/P PIC16F18175-I/P Microchip Technology PIC16F18154-55-74-75-Microcontroller-Data-Sheet-DS40002491.pdf Description: IC MCU 8BIT 14KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 14KB (14K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 58x12b SAR; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, RS-232, RS-485, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 35
на замовлення 329 шт:
термін постачання 21-31 дні (днів)
2+173.35 грн
25+153.46 грн
100+138.73 грн
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AT80C31X2-3CSUL AT80C31X2-3CSUL Microchip Technology doc4428.pdf Description: IC MCU 8BIT ROMLESS 40PDIL
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 30/20MHz
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR
Supplier Device Package: 40-PDIL
Number of I/O: 32
DigiKey Programmable: Not Verified
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MNS2N3501UBP
MNS2N3501UBP
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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MNS2N3501UBP/TR
MNS2N3501UBP/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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2N3501UB/TR
2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JAN2N3501UB/TR
JAN2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANTX2N3501UB/TR
JANTX2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANTXV2N3501UB/TR
JANTXV2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANS2N3501UB
JANS2N3501UB
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANS2N3501UB/TR
JANS2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANS2N3501L
JANS2N3501L
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANSL2N3501UB/TR
JANSL2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANSM2N3501UB/TR
JANSM2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANSP2N3501UB/TR
JANSP2N3501UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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JANSR2N3501
JANSR2N3501
Виробник: Microchip Technology
Description: TRANS NPN 150V 300MA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
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2N3501U4/TR
2N3501U4/TR
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
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2N3501U4
2N3501U4
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
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JANSR2N3501L
JANSR2N3501L
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JAN2N3501U4
JAN2N3501U4
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANS2N3501U4
JANS2N3501U4
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANTX2N3501U4
JANTX2N3501U4
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANTXV2N3501U4
JANTXV2N3501U4
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JAN2N3501U4/TR
JAN2N3501U4/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A U4
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANTX2N3501U4/TR
JANTX2N3501U4/TR
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A U4
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: U4
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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JANKCCR2N3501
JANKCCR2N3501
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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USB3310C-CP-TR 00002363A.pdf
USB3310C-CP-TR
Виробник: Microchip Technology
Description: IC TRANSCEIVER HALF 1/1 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Receiver Hysteresis: 150 mV
Duplex: Half
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USB3310C-CP-TR 00002363A.pdf
USB3310C-CP-TR
Виробник: Microchip Technology
Description: IC TRANSCEIVER HALF 1/1 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Receiver Hysteresis: 150 mV
Duplex: Half
на замовлення 709 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.83 грн
25+93.30 грн
100+84.95 грн
Мінімальне замовлення: 3
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USB3317C-GJ-TR 3317.pdf
USB3317C-GJ-TR
Виробник: Microchip Technology
Description: IC TXRX USB 2.0 FLEXPWR 25BGA
Packaging: Tape & Reel (TR)
Package / Case: 25-VFBGA
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Protocol: USB 2.0
Supplier Device Package: 25-BGA (3x3)
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USB3317C-GJ-TR 3317.pdf
USB3317C-GJ-TR
Виробник: Microchip Technology
Description: IC TXRX USB 2.0 FLEXPWR 25BGA
Packaging: Cut Tape (CT)
Package / Case: 25-VFBGA
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Protocol: USB 2.0
Supplier Device Package: 25-BGA (3x3)
на замовлення 2760 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.89 грн
25+110.17 грн
100+100.55 грн
Мінімальне замовлення: 3
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VC-708-ECW-FNXN-160M000000 vc708.pdf
Виробник: Microchip Technology
Description: ULTRA LOW JITTER XO +3.3 VDC +/-
Packaging: Tape & Reel (TR)
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MIC2039EYMT-TR MIC2039-High-Accuracy-High-Side-Adjustable-Current-Limit-Power-Switch-20005540A.pdf
MIC2039EYMT-TR
Виробник: Microchip Technology
Description: IC PWR SWITCH P-CHAN 1:1 6TDFN
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TDFN (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
на замовлення 3628 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+70.13 грн
25+56.36 грн
100+50.60 грн
Мінімальне замовлення: 5
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MCP79411T-I/MNY MCP79410-MCP79411-MCP79412-Battery-Backed%20I2C-RTCC-20002266J.pdf
MCP79411T-I/MNY
Виробник: Microchip Technology
Description: IC RTC CLK/CALENDAR I2C 8TDFN
Packaging: Tape & Reel (TR)
Features: Alarm, Leap Year, Square Wave Output, SRAM, Unique ID
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64B, 1Kb
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Voltage - Supply, Battery: 1.3V ~ 5.5V
Current - Timekeeping (Max): 1.2µA @ 3.3V
DigiKey Programmable: Not Verified
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MCP79411T-I/MNY MCP79410-MCP79411-MCP79412-Battery-Backed%20I2C-RTCC-20002266J.pdf
MCP79411T-I/MNY
Виробник: Microchip Technology
Description: IC RTC CLK/CALENDAR I2C 8TDFN
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, Square Wave Output, SRAM, Unique ID
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64B, 1Kb
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Voltage - Supply, Battery: 1.3V ~ 5.5V
Current - Timekeeping (Max): 1.2µA @ 3.3V
DigiKey Programmable: Not Verified
на замовлення 2069 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.83 грн
Мінімальне замовлення: 4
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AT90PWM81-16SN doc7734.pdf
AT90PWM81-16SN
Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Data Converters: A/D 8x10b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI
Peripherals: Brown-out Detect/Reset, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 16
DigiKey Programmable: Not Verified
на замовлення 830 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+77.22 грн
25+67.83 грн
100+61.28 грн
Мінімальне замовлення: 5
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AT90PWM81-16SN doc7734.pdf
AT90PWM81-16SN
Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Data Converters: A/D 8x10b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI
Peripherals: Brown-out Detect/Reset, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 16
DigiKey Programmable: Not Verified
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VT-804-EAW-1070-40M0000000 VT-804.pdf
Виробник: Microchip Technology
Description: TCXO +3.3 VDC +/-10% CMOS -10C T
Packaging: Tape & Reel (TR)
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UFS180GE3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 1A SMBG
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMBG)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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VCC6-LCB-80M0000000 1243794-vcc6
Виробник: Microchip Technology
Description: VCC6-LCB-80M0000000
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 60mA
Height - Seated (Max): 0.063" (1.60mm)
Frequency: 80 MHz
Base Resonator: Crystal
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MO-9200AE-D3E-EE50M0000000 MO-9200A.pdf
Виробник: Microchip Technology
Description: MEMS BASED XO +3.3 VDC +/-5% LVD
Packaging: Tape & Reel (TR)
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MO-9200AE-D3E-HE87M3515420 MO-9200A.pdf
Виробник: Microchip Technology
Description: MEMS BASED XO +2.5 VDC +/-5% LVD
Packaging: Tape & Reel (TR)
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MV-9450AE-D3E-EES500M000000
Виробник: Microchip Technology
Description: MEMS BASED VCXO +3.3 VDC LVDS -4
Packaging: Tape & Reel (TR)
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2N5303 6088-2n5302-datasheet
2N5303
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 4A, 20A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 2V
Supplier Device Package: TO-204AD (TO-3)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 5 W
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CD4565 8365-cd4565-cd4584a-datasheet
CD4565
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 75°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Die
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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CD4565A 8365-cd4565-cd4584a-datasheet
CD4565A
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Die
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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MASMCJ48CA 10561-msmc-datasheet
MASMCJ48CA
Виробник: Microchip Technology
Description: TVS DIODE 48VWM 77.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCJ48CAE3 10561-msmc-datasheet
MASMCJ48CAE3
Виробник: Microchip Technology
Description: TVS DIODE 48VWM 77.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCJ48CAE3/TR 10561-msmc-datasheet
MASMCJ48CAE3/TR
Виробник: Microchip Technology
Description: TVS DIODE 48VWM 77.4VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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DSA6011MA1B-032K768TVAO
DSA6011MA1B-032K768TVAO
Виробник: Microchip Technology
Description: MEMS OSCILLATOR, AUTOMOTIVE, LOW
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 32.768 kHz
Base Resonator: MEMS
Supplier Device Package: 4-VFLGA (2x1.6)
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DSA6011MA1B-032K768TVAO
DSA6011MA1B-032K768TVAO
Виробник: Microchip Technology
Description: MEMS OSCILLATOR, AUTOMOTIVE, LOW
Packaging: Cut Tape (CT)
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 32.768 kHz
Base Resonator: MEMS
Supplier Device Package: 4-VFLGA (2x1.6)
на замовлення 629 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+66.19 грн
25+53.36 грн
100+51.70 грн
Мінімальне замовлення: 5
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JANTX1N4964 10913-sa5-37-datasheet
JANTX1N4964
Виробник: Microchip Technology
Description: DIODE ZENER 18V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 4 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Qualification: MIL-PRF-19500/356
на замовлення 224 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+445.20 грн
100+397.97 грн
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JAN1N4964 10913-sa5-37-datasheet
JAN1N4964
Виробник: Microchip Technology
Description: DIODE ZENER 18V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 4 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Qualification: MIL-PRF-19500/356
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+407.38 грн
100+364.34 грн
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JAN1N4964/TR
JAN1N4964/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 4 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Qualification: MIL-PRF-19500/356
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JANTXV1N4964 10913-sa5-37-datasheet
JANTXV1N4964
Виробник: Microchip Technology
Description: DIODE ZENER 18V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 4 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Qualification: MIL-PRF-19500/356
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JAN1N4964US/TR 124793-lds-0183-1-datasheet
JAN1N4964US/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: E-MELF
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Qualification: MIL-PRF-19500/356
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JANTX1N4964US 11059-sd44a-datasheet
JANTX1N4964US
Виробник: Microchip Technology
Description: DIODE ZENER 18V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Qualification: MIL-PRF-19500/356
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JANTX1N4964US/TR 1N4954US-1N4996US%2C%201N5968US-1N5969US%2C%201N6632US-1N6637US.pdf
JANTX1N4964US/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: E-MELF
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Qualification: MIL-PRF-19500/356
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CD0.5A40
CD0.5A40
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 200MA DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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CDLL0.5A40/TR 131969-lds-0302-1-datasheet
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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1N6845
1N6845
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 40A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 10V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: U3 (SMD-0.5)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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DSB0.5A40/TR
DSB0.5A40/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 500MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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PIC16F18175-I/P PIC16F18154-55-74-75-Microcontroller-Data-Sheet-DS40002491.pdf
PIC16F18175-I/P
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 14KB (14K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 58x12b SAR; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, RS-232, RS-485, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 35
на замовлення 329 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+173.35 грн
25+153.46 грн
100+138.73 грн
Мінімальне замовлення: 2
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AT80C31X2-3CSUL doc4428.pdf
AT80C31X2-3CSUL
Виробник: Microchip Technology
Description: IC MCU 8BIT ROMLESS 40PDIL
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 30/20MHz
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR
Supplier Device Package: 40-PDIL
Number of I/O: 32
DigiKey Programmable: Not Verified
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