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PIC32MX470F512LT-I/PF PIC32MX470F512LT-I/PF Microchip Technology PIC32MX330350370430450470_Datasheet_DS60001185H.pdf Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 28x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 81
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+598.20 грн
Мінімальне замовлення: 1000
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PIC32MX470F512LT-I/PF PIC32MX470F512LT-I/PF Microchip Technology PIC32MX330350370430450470_Datasheet_DS60001185H.pdf Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 28x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 81
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+720.06 грн
25+636.05 грн
100+576.04 грн
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DSC6021HI2B-018E Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf Description: MEMS OSC (FS) ULP LVCMOS -40C-85
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Base Resonator: MEMS
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JAN2N5154P JAN2N5154P Microchip Technology Description: TRANS NPN 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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F2N5154 F2N5154 Microchip Technology Description: TRANS NPN 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANS2N5154 JANS2N5154 Microchip Technology Description: TRANS NPN 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANTXV2N5154U3 JANTXV2N5154U3 Microchip Technology Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANTXV2N5154U3/TR JANTXV2N5154U3/TR Microchip Technology Description: TRANS NPN 80V 2A U3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANSR2N5154 JANSR2N5154 Microchip Technology Description: TRANS NPN 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANSF2N5154 JANSF2N5154 Microchip Technology Description: TRANS NPN 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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2N5154U3 2N5154U3 Microchip Technology Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JAN2N5154U3 JAN2N5154U3 Microchip Technology Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANTX2N5154U3 JANTX2N5154U3 Microchip Technology Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANS2N5154U3/TR JANS2N5154U3/TR Microchip Technology Description: TRANS NPN 80V 2A U3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANSR2N5154U3 JANSR2N5154U3 Microchip Technology Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANSR2N5154U3/TR JANSR2N5154U3/TR Microchip Technology Description: TRANS NPN 80V 2A U3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANSF2N5154U3/TR JANSF2N5154U3/TR Microchip Technology Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANTX2N5154 JANTX2N5154 Microchip Technology 8864-lds-0039-pdf Description: TRANS NPN 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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Jantxv2N5154 Jantxv2N5154 Microchip Technology 8864-lds-0039-pdf Description: TRANS NPN 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANKCDR2N5154 JANKCDR2N5154 Microchip Technology Description: TRANS NPN 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANKCDF2N5154 JANKCDF2N5154 Microchip Technology 14809-military-qualified-die-chip Description: TRANS NPN 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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DSC1001AE1-006.1440T DSC1001AE1-006.1440T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 6.1440MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 6.144 MHz
Base Resonator: MEMS
Supplier Device Package: 4-DFN (7x5)
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DSC1001AE1-006.1440 DSC1001AE1-006.1440 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 6.1440MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 6.144 MHz
Base Resonator: MEMS
Supplier Device Package: 4-DFN (7x5)
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DSC1121AE1-006.1440T DSC1121AE1-006.1440T Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: OSC MEMS LOW PWR LVCMOS
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 6.144 MHz
Base Resonator: MEMS
Supplier Device Package: 6-VDFN (7x5)
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DSC1121AE1-006.1440 DSC1121AE1-006.1440 Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSC XO 6.1440MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 6.144 MHz
Base Resonator: MEMS
Supplier Device Package: 6-VDFN (7x5)
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VT-501-EAE-1060-10M0000000 Microchip Technology VT-501.pdf Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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VT-700-EAE-1060-10M0000000 Microchip Technology VT-700.pdf Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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VT-700-EAE-1060-38M4000000 Microchip Technology VT-700.pdf Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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VT-704-EAE-1060-11M0592000 Microchip Technology VT-704.pdf Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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VT-704-EAE-1060-32M7680000 Microchip Technology VT-704.pdf Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Packaging: Tape & Reel (TR)
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VT-804-EAE-1060-16M3680000 Microchip Technology VT-804.pdf Description: TCXO +3.3 VDC +/-10% CMOS -40C T
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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VT-804-EAE-1060-26M0000000 Microchip Technology VT-804.pdf Description: TCXO +3.3 VDC +/-10% CMOS -40C T
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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DSC1122AE1-005.0000 DSC1122AE1-005.0000 Microchip Technology DSC1102-22-Low-Jitter-Precision-LVPECL-Oscillator-DS20006254A.pdf Description: MEMS OSC XO 5.0000MHZ LVPECL SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 58mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 5 MHz
Base Resonator: MEMS
Supplier Device Package: 6-VDFN (7x5)
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DSC1122AE1-005.0000T DSC1122AE1-005.0000T Microchip Technology Description: MEMS OSC 5MHZ LVPECL 50PPM 7.0X5
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 58mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 5 MHz
Base Resonator: MEMS
Supplier Device Package: 6-VDFN (7x5)
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DSC1001AE1-050.0000T DSC1001AE1-050.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
Supplier Device Package: 4-DFN (7x5)
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DSC1003AE1-050.0000T DSC1003AE1-050.0000T Microchip Technology Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Supplier Device Package: 4-DFN (7x5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
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DSC1001AE1-050.0000 DSC1001AE1-050.0000 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Supplier Device Package: 4-DFN (7x5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
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DSC1003AE1-050.0000 DSC1003AE1-050.0000 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Supplier Device Package: 4-DFN (7x5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
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DSC1121AE1-050.0000T DSC1121AE1-050.0000T Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSC
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Supplier Device Package: 6-VDFN (7x5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
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DSC1101AE1-050.0000T DSC1101AE1-050.0000T Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Supplier Device Package: 6-VDFN (7x5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
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DSC1121AE1-050.0000 DSC1121AE1-050.0000 Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Supplier Device Package: 6-VDFN (7x5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
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DSC1101AE1-050.0000 DSC1101AE1-050.0000 Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
Supplier Device Package: 6-VDFN (7x5)
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VT-802-EAE-1050-34M3680000 Microchip Technology VT-802.pdf Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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DSC1001AE1-004.0000T DSC1001AE1-004.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 4.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 4 MHz
Base Resonator: MEMS
Supplier Device Package: 4-DFN (7x5)
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DSC1001AE1-004.0000 DSC1001AE1-004.0000 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 4.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 4 MHz
Base Resonator: MEMS
Supplier Device Package: 4-DFN (7x5)
на замовлення 309 шт:
термін постачання 21-31 дні (днів)
3+146.87 грн
10+138.60 грн
50+136.42 грн
Мінімальне замовлення: 3
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DSC1121AE1-004.0000T DSC1121AE1-004.0000T Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSCILLATOR LOW JITTER
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 4 MHz
Base Resonator: MEMS
Supplier Device Package: 6-VDFN (7x5)
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DSC1121AE1-004.0000 DSC1121AE1-004.0000 Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSC XO 4.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 4 MHz
Base Resonator: MEMS
Supplier Device Package: 6-VDFN (7x5)
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MIC5207-3.3BZ MIC5207-3.3BZ Microchip Technology MCRLS03165-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR 3.3V 180MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 180mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Voltage Dropout (Max): 0.4V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3 µA
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MP6KE12A MP6KE12A Microchip Technology 9518-mp6ke-pdf Description: TVS DIODE 10.2VWM 16.7VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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DSC6003CI2B-250K000 DSC6003CI2B-250K000 Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133.pdf Description: MEMS OSC XO 250.0000KHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6111JI2B-250K000 DSC6111JI2B-250K000 Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155.pdf Description: MEMS OSC XO 250.0000KHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Supplier Device Package: 4-VLGA (2.5x2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6013JI2B-250K000 Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133.pdf Description: MEMS OSC XO 250.0000KHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VLGA (2.5x2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6112JI2B-250K000 DSC6112JI2B-250K000 Microchip Technology DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155.pdf Description: MEMS OSC XO 250.0000KHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Supplier Device Package: 4-VLGA (2.5x2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6011JI2B-250K000 Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133.pdf Description: MEMS OSC XO 250.0000KHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VLGA (2.5x2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 250 kHz
Base Resonator: MEMS
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MP6KE100A MP6KE100A Microchip Technology 9518-mp6ke-pdf Description: TVS DIODE 85.5VWM 137VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP6KE110A MP6KE110A Microchip Technology 9518-mp6ke-pdf Description: TVS DIODE 94VWM 152VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.4A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP6KE160A MP6KE160A Microchip Technology 9518-mp6ke-pdf Description: TVS DIODE 136VWM 219VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP6KE16A MP6KE16A Microchip Technology rf01007_rb.pdf Description: TVS DIODE 13.6VWM 22.5VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP6KE180A MP6KE180A Microchip Technology 9518-mp6ke-pdf Description: TVS DIODE 154VWM 246VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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3204C8IXS Microchip Technology Description: SMARTRAID 3204-8I /E SINGLE
Packaging: Bulk
Interface: PCI Express
Type: RAID Adapter
Number of Ports: 8
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+62137.93 грн
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PIC32MX470F512LT-I/PF PIC32MX330350370430450470_Datasheet_DS60001185H.pdf
PIC32MX470F512LT-I/PF
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 28x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 81
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+598.20 грн
Мінімальне замовлення: 1000
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PIC32MX470F512LT-I/PF PIC32MX330350370430450470_Datasheet_DS60001185H.pdf
PIC32MX470F512LT-I/PF
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 28x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 81
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+720.06 грн
25+636.05 грн
100+576.04 грн
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DSC6021HI2B-018E DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf
Виробник: Microchip Technology
Description: MEMS OSC (FS) ULP LVCMOS -40C-85
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Base Resonator: MEMS
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JAN2N5154P
JAN2N5154P
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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F2N5154
F2N5154
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JANS2N5154
JANS2N5154
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANTXV2N5154U3
JANTXV2N5154U3
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANTXV2N5154U3/TR
JANTXV2N5154U3/TR
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A U3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANSR2N5154
JANSR2N5154
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANSF2N5154
JANSF2N5154
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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2N5154U3
2N5154U3
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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JAN2N5154U3
JAN2N5154U3
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANTX2N5154U3
JANTX2N5154U3
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANS2N5154U3/TR
JANS2N5154U3/TR
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A U3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANSR2N5154U3
JANSR2N5154U3
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANSR2N5154U3/TR
JANSR2N5154U3/TR
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A U3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANSF2N5154U3/TR
JANSF2N5154U3/TR
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANTX2N5154 8864-lds-0039-pdf
JANTX2N5154
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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Jantxv2N5154 8864-lds-0039-pdf
Jantxv2N5154
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANKCDR2N5154
JANKCDR2N5154
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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JANKCDF2N5154 14809-military-qualified-die-chip
JANKCDF2N5154
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
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DSC1001AE1-006.1440T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AE1-006.1440T
Виробник: Microchip Technology
Description: MEMS OSC XO 6.1440MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 6.144 MHz
Base Resonator: MEMS
Supplier Device Package: 4-DFN (7x5)
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DSC1001AE1-006.1440 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AE1-006.1440
Виробник: Microchip Technology
Description: MEMS OSC XO 6.1440MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 6.144 MHz
Base Resonator: MEMS
Supplier Device Package: 4-DFN (7x5)
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DSC1121AE1-006.1440T DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1121AE1-006.1440T
Виробник: Microchip Technology
Description: OSC MEMS LOW PWR LVCMOS
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 6.144 MHz
Base Resonator: MEMS
Supplier Device Package: 6-VDFN (7x5)
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DSC1121AE1-006.1440 DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1121AE1-006.1440
Виробник: Microchip Technology
Description: MEMS OSC XO 6.1440MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 6.144 MHz
Base Resonator: MEMS
Supplier Device Package: 6-VDFN (7x5)
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VT-501-EAE-1060-10M0000000 VT-501.pdf
Виробник: Microchip Technology
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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VT-700-EAE-1060-10M0000000 VT-700.pdf
Виробник: Microchip Technology
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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VT-700-EAE-1060-38M4000000 VT-700.pdf
Виробник: Microchip Technology
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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VT-704-EAE-1060-11M0592000 VT-704.pdf
Виробник: Microchip Technology
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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VT-704-EAE-1060-32M7680000 VT-704.pdf
Виробник: Microchip Technology
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Packaging: Tape & Reel (TR)
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VT-804-EAE-1060-16M3680000 VT-804.pdf
Виробник: Microchip Technology
Description: TCXO +3.3 VDC +/-10% CMOS -40C T
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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VT-804-EAE-1060-26M0000000 VT-804.pdf
Виробник: Microchip Technology
Description: TCXO +3.3 VDC +/-10% CMOS -40C T
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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DSC1122AE1-005.0000 DSC1102-22-Low-Jitter-Precision-LVPECL-Oscillator-DS20006254A.pdf
DSC1122AE1-005.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 5.0000MHZ LVPECL SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 58mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 5 MHz
Base Resonator: MEMS
Supplier Device Package: 6-VDFN (7x5)
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DSC1122AE1-005.0000T
DSC1122AE1-005.0000T
Виробник: Microchip Technology
Description: MEMS OSC 5MHZ LVPECL 50PPM 7.0X5
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 58mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 5 MHz
Base Resonator: MEMS
Supplier Device Package: 6-VDFN (7x5)
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DSC1001AE1-050.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AE1-050.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
Supplier Device Package: 4-DFN (7x5)
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DSC1003AE1-050.0000T
DSC1003AE1-050.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Supplier Device Package: 4-DFN (7x5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
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DSC1001AE1-050.0000 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AE1-050.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Supplier Device Package: 4-DFN (7x5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
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DSC1003AE1-050.0000 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1003AE1-050.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Supplier Device Package: 4-DFN (7x5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
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DSC1121AE1-050.0000T DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1121AE1-050.0000T
Виробник: Microchip Technology
Description: MEMS OSC
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Supplier Device Package: 6-VDFN (7x5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
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DSC1101AE1-050.0000T DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1101AE1-050.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Supplier Device Package: 6-VDFN (7x5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
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DSC1121AE1-050.0000 DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1121AE1-050.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Supplier Device Package: 6-VDFN (7x5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
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DSC1101AE1-050.0000 DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1101AE1-050.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 50 MHz
Base Resonator: MEMS
Supplier Device Package: 6-VDFN (7x5)
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VT-802-EAE-1050-34M3680000 VT-802.pdf
Виробник: Microchip Technology
Description: TCXO +3.3 VDC +/-5% CMOS -40C TO
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-VDFN (3.2x2.5)
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DSC1001AE1-004.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AE1-004.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 4.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 4 MHz
Base Resonator: MEMS
Supplier Device Package: 4-DFN (7x5)
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DSC1001AE1-004.0000 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AE1-004.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 4.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 4 MHz
Base Resonator: MEMS
Supplier Device Package: 4-DFN (7x5)
на замовлення 309 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.87 грн
10+138.60 грн
50+136.42 грн
Мінімальне замовлення: 3
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DSC1121AE1-004.0000T DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1121AE1-004.0000T
Виробник: Microchip Technology
Description: MEMS OSCILLATOR LOW JITTER
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 4 MHz
Base Resonator: MEMS
Supplier Device Package: 6-VDFN (7x5)
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DSC1121AE1-004.0000 DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1121AE1-004.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 4.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 4 MHz
Base Resonator: MEMS
Supplier Device Package: 6-VDFN (7x5)
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MIC5207-3.3BZ MCRLS03165-1.pdf?t.download=true&u=5oefqw
MIC5207-3.3BZ
Виробник: Microchip Technology
Description: IC REG LINEAR 3.3V 180MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 180mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Voltage Dropout (Max): 0.4V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3 µA
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MP6KE12A 9518-mp6ke-pdf
MP6KE12A
Виробник: Microchip Technology
Description: TVS DIODE 10.2VWM 16.7VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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DSC6003CI2B-250K000 DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133.pdf
DSC6003CI2B-250K000
Виробник: Microchip Technology
Description: MEMS OSC XO 250.0000KHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6111JI2B-250K000 DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155.pdf
DSC6111JI2B-250K000
Виробник: Microchip Technology
Description: MEMS OSC XO 250.0000KHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Supplier Device Package: 4-VLGA (2.5x2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6013JI2B-250K000 DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133.pdf
Виробник: Microchip Technology
Description: MEMS OSC XO 250.0000KHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VLGA (2.5x2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6112JI2B-250K000 DSC61xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006155.pdf
DSC6112JI2B-250K000
Виробник: Microchip Technology
Description: MEMS OSC XO 250.0000KHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 3mA (Typ)
Supplier Device Package: 4-VLGA (2.5x2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 250 kHz
Base Resonator: MEMS
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DSC6011JI2B-250K000 DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133.pdf
Виробник: Microchip Technology
Description: MEMS OSC XO 250.0000KHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VLGA (2.5x2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 250 kHz
Base Resonator: MEMS
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MP6KE100A 9518-mp6ke-pdf
MP6KE100A
Виробник: Microchip Technology
Description: TVS DIODE 85.5VWM 137VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP6KE110A 9518-mp6ke-pdf
MP6KE110A
Виробник: Microchip Technology
Description: TVS DIODE 94VWM 152VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.4A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP6KE160A 9518-mp6ke-pdf
MP6KE160A
Виробник: Microchip Technology
Description: TVS DIODE 136VWM 219VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP6KE16A rf01007_rb.pdf
MP6KE16A
Виробник: Microchip Technology
Description: TVS DIODE 13.6VWM 22.5VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP6KE180A 9518-mp6ke-pdf
MP6KE180A
Виробник: Microchip Technology
Description: TVS DIODE 154VWM 246VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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3204C8IXS
Виробник: Microchip Technology
Description: SMARTRAID 3204-8I /E SINGLE
Packaging: Bulk
Interface: PCI Express
Type: RAID Adapter
Number of Ports: 8
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+62137.93 грн
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