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MIC5350-MMYMT-TR MIC5350-MMYMT-TR Microchip Technology mic5350.pdf Description: IC REG LINEAR 2.8V/2.8V 8TMLF
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad, 8-TMLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 175 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 8-TMLF® (2x2)
Voltage - Output (Min/Fixed): 2.8V, 2.8V
Control Features: Enable
PSRR: 50dB ~ 35dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.2V @ 300mA, 0.3V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 240 µA
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2N2904A 2N2904A Microchip Technology 122694-lds-0186-datasheet Description: TRANS PNP 60V 0.6A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 600 mW
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DSC1121BI2-200.0000 DSC1121BI2-200.0000 Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSC XO 200.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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DSC1121AI2-200.0000 DSC1121AI2-200.0000 Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSC XO 200.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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VMK3-1001-32K7680000TR VMK3-1001-32K7680000TR Microchip Technology VMK3-VMK4-32.768kHz-Tuning-Fork-DS20006440A.pdf Description: VMK3-1001-32K7680000TR
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+22.68 грн
Мінімальне замовлення: 3000
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VMK3-1001-32K7680000TR VMK3-1001-32K7680000TR Microchip Technology VMK3-VMK4-32.768kHz-Tuning-Fork-DS20006440A.pdf Description: VMK3-1001-32K7680000TR
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
на замовлення 5982 шт:
термін постачання 21-31 дні (днів)
12+27.79 грн
25+26.73 грн
Мінімальне замовлення: 12
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GC2510-150A Microchip Technology Description: SI SRD NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 0.4pF @ 6V, 1MHz
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 15 V
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LM2576-3.3BT LM2576-3.3BT Microchip Technology MCRLS03589-1.pdf?t.download=true&u=5oefqw Description: IC REG BUCK 3.3V 3A TO220-5
Packaging: Bulk
Package / Case: TO-220-5
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 3.3V
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
260+80.27 грн
Мінімальне замовлення: 260
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2N3635UB/TR 2N3635UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
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JAN2N3635UB/TR JAN2N3635UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANTX2N3635UB/TR JANTX2N3635UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANTXV2N3635UB/TR JANTXV2N3635UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANS2N3635 JANS2N3635 Microchip Technology Description: TRANS PNP 140V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANS2N3635L JANS2N3635L Microchip Technology Description: TRANS PNP 140V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANS2N3635UB JANS2N3635UB Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANS2N3635UB/TR JANS2N3635UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSL2N3635L JANSL2N3635L Microchip Technology Description: TRANS PNP 140V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSL2N3635 JANSL2N3635 Microchip Technology Description: TRANS PNP 140V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSM2N3635 JANSM2N3635 Microchip Technology Description: TRANS PNP 140V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSM2N3635L JANSM2N3635L Microchip Technology Description: TRANS PNP 140V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSP2N3635 JANSP2N3635 Microchip Technology Description: TRANS PNP 140V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSP2N3635L JANSP2N3635L Microchip Technology Description: TRANS PNP 140V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSR2N3635 JANSR2N3635 Microchip Technology Description: TRANS PNP 140V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSR2N3635L JANSR2N3635L Microchip Technology Description: TRANS PNP 140V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSR2N3635UB JANSR2N3635UB Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSL2N3635UB JANSL2N3635UB Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSM2N3635UB JANSM2N3635UB Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSP2N3635UB JANSP2N3635UB Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSL2N3635UB/TR JANSL2N3635UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSM2N3635UB/TR JANSM2N3635UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSP2N3635UB/TR JANSP2N3635UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSR2N3635UB/TR JANSR2N3635UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANKCAR2N3635 JANKCAR2N3635 Microchip Technology Description: TRANS PNP 140V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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MNS2N3637UB/TR Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
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MNS2N3637UB Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Bulk
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APTDX300KK170D16AG APTDX300KK170D16AG Microchip Technology APTDX300KK170D16AG-Si-Diode-Module-Datasheet.pdf Description: DIODE MODULE GEN PURP 1700V 345A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 345A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 1700 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+8878.89 грн
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APTDX600KK170D16AG APTDX600KK170D16AG Microchip Technology APTDX600KK170D16AG-Si-Diode-Module-Datasheet.pdf Description: PM-DIODE-FRED-D-D1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 670A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 600 A
Current - Reverse Leakage @ Vr: 50 µA @ 1700 V
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DSC6311JI2EB-018.4320T Microchip Technology DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Spread Spectrum Bandwidth: ±2.00%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 18.432 MHz
Base Resonator: MEMS
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DSC6311JI2EB-018.4320 Microchip Technology DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Spread Spectrum Bandwidth: ±2.00%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 18.432 MHz
Base Resonator: MEMS
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AT90PWM316-16SUR AT90PWM316-16SUR Microchip Technology Atmel-7710-8-bit-Microcontroller-AT90PWM216-316_Datasheet-Summary.pdf Description: IC MCU 8BIT 16KB FLASH 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Data Converters: A/D 11x10b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-SOIC
Number of I/O: 27
DigiKey Programmable: Not Verified
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1N6134AUS/TR 1N6134AUS/TR Microchip Technology 1N6103AUS%20-%201N6137AUS.pdf Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
100+1030.99 грн
Мінімальне замовлення: 100
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1N6134AUS/TR 1N6134AUS/TR Microchip Technology 1N6103AUS%20-%201N6137AUS.pdf Description: BI-DIRECTIONAL TVS
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+1110.65 грн
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JAN1N6134A JAN1N6134A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 114VWM 206.3VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTX1N6134A JANTX1N6134A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 114VWM 206.3VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTX1N6134AUS JANTX1N6134AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTX1N6134AUS/TR JANTX1N6134AUS/TR Microchip Technology 1N6103AUS%20-%201N6137AUS.pdf Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JAN1N6134AUS JAN1N6134AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JAN1N6134AUS/TR JAN1N6134AUS/TR Microchip Technology 1N6103AUS%20-%201N6137AUS.pdf Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTXV1N6134AUS/TR JANTXV1N6134AUS/TR Microchip Technology Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTXV1N6134AUS JANTXV1N6134AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTXV1N6134A JANTXV1N6134A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 114VWM 206.3VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANS1N6134A JANS1N6134A Microchip Technology Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANS1N6134AUS JANS1N6134AUS Microchip Technology Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANS1N6134AUS/TR JANS1N6134AUS/TR Microchip Technology 1N6103AUS%20-%201N6137AUS.pdf Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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MIC79050-4.2YMM MIC79050-4.2YMM Microchip Technology MCRLS04931-1.pdf?t.download=true&u=5oefqw Description: IC BATT CHG LI-ION 1CELL 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Number of Cells: 1
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Battery Chemistry: Lithium Ion
Supplier Device Package: 8-MSOP
Fault Protection: Over Current, Over Temperature, Reverse Battery, Reverse Current
Voltage - Supply (Max): 16V
Battery Pack Voltage: 4.2V
Current - Charging: Constant, Pulsed
на замовлення 175 шт:
термін постачання 21-31 дні (днів)
95+233.07 грн
Мінімальне замовлення: 95
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MIC5339-MGYMT-TR MIC5339-MGYMT-TR Microchip Technology mic5338.pdf Description: IC REG LINEAR 1.8V/2.8V 6-TMLF
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad, 6-TMLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 58 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 6-TMLF® (1.6x1.6)
Voltage - Output (Min/Fixed): 1.8V, 2.8V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.38V @ 300mA, 0.38V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 135 µA
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MIC5339-MGYMT-TR MIC5339-MGYMT-TR Microchip Technology mic5338.pdf Description: IC REG LINEAR 1.8V/2.8V 6-TMLF
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad, 6-TMLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 58 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 6-TMLF® (1.6x1.6)
Voltage - Output (Min/Fixed): 1.8V, 2.8V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.38V @ 300mA, 0.38V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 135 µA
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RT4G150L-CQG352B Microchip Technology Description: RT4G150L-CQG352B
Packaging: Bulk
Package / Case: 352-BFCQFP Exposed Pad and Tie Bar
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Supply: 1.14V ~ 1.26V
Number of Logic Elements/Cells: 151824
Supplier Device Package: 352-QFP (48x48)
Total RAM Bits: 5325
DigiKey Programmable: Not Verified
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MSMCGLCE70Ae3 Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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DSC1124AI1-100.0000 DSC1124AI1-100.0000 Microchip Technology DSC1104-24-Low-Jitter-Precision-HCSL-Oscillator-DS20005870B.pdf Description: MEMS OSC XO 100.0000MHZ HCSL SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 42mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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MIC5350-MMYMT-TR mic5350.pdf
MIC5350-MMYMT-TR
Виробник: Microchip Technology
Description: IC REG LINEAR 2.8V/2.8V 8TMLF
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad, 8-TMLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 175 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 8-TMLF® (2x2)
Voltage - Output (Min/Fixed): 2.8V, 2.8V
Control Features: Enable
PSRR: 50dB ~ 35dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.2V @ 300mA, 0.3V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 240 µA
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2N2904A 122694-lds-0186-datasheet
2N2904A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 600 mW
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DSC1121BI2-200.0000 DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1121BI2-200.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 200.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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DSC1121AI2-200.0000 DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1121AI2-200.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 200.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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VMK3-1001-32K7680000TR VMK3-VMK4-32.768kHz-Tuning-Fork-DS20006440A.pdf
VMK3-1001-32K7680000TR
Виробник: Microchip Technology
Description: VMK3-1001-32K7680000TR
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+22.68 грн
Мінімальне замовлення: 3000
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VMK3-1001-32K7680000TR VMK3-VMK4-32.768kHz-Tuning-Fork-DS20006440A.pdf
VMK3-1001-32K7680000TR
Виробник: Microchip Technology
Description: VMK3-1001-32K7680000TR
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
на замовлення 5982 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+27.79 грн
25+26.73 грн
Мінімальне замовлення: 12
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GC2510-150A
Виробник: Microchip Technology
Description: SI SRD NON HERMETIC EPSM SMT
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 0.4pF @ 6V, 1MHz
Supplier Device Package: Chip
Voltage - Peak Reverse (Max): 15 V
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LM2576-3.3BT MCRLS03589-1.pdf?t.download=true&u=5oefqw
LM2576-3.3BT
Виробник: Microchip Technology
Description: IC REG BUCK 3.3V 3A TO220-5
Packaging: Bulk
Package / Case: TO-220-5
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 3.3V
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
260+80.27 грн
Мінімальне замовлення: 260
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2N3635UB/TR
2N3635UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
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JAN2N3635UB/TR
JAN2N3635UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANTX2N3635UB/TR
JANTX2N3635UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANTXV2N3635UB/TR
JANTXV2N3635UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANS2N3635
JANS2N3635
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANS2N3635L
JANS2N3635L
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANS2N3635UB
JANS2N3635UB
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANS2N3635UB/TR
JANS2N3635UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSL2N3635L
JANSL2N3635L
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSL2N3635
JANSL2N3635
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSM2N3635
JANSM2N3635
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSM2N3635L
JANSM2N3635L
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSP2N3635
JANSP2N3635
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSP2N3635L
JANSP2N3635L
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSR2N3635
JANSR2N3635
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSR2N3635L
JANSR2N3635L
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSR2N3635UB
JANSR2N3635UB
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSL2N3635UB
JANSL2N3635UB
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSM2N3635UB
JANSM2N3635UB
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSP2N3635UB
JANSP2N3635UB
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSL2N3635UB/TR
JANSL2N3635UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSM2N3635UB/TR
JANSM2N3635UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
товару немає в наявності
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JANSP2N3635UB/TR
JANSP2N3635UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANSR2N3635UB/TR
JANSR2N3635UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: MIL-PRF-19500/357
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JANKCAR2N3635
JANKCAR2N3635
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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MNS2N3637UB/TR
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
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MNS2N3637UB
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
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APTDX300KK170D16AG APTDX300KK170D16AG-Si-Diode-Module-Datasheet.pdf
APTDX300KK170D16AG
Виробник: Microchip Technology
Description: DIODE MODULE GEN PURP 1700V 345A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 345A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 1700 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8878.89 грн
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APTDX600KK170D16AG APTDX600KK170D16AG-Si-Diode-Module-Datasheet.pdf
APTDX600KK170D16AG
Виробник: Microchip Technology
Description: PM-DIODE-FRED-D-D1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 670A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 600 A
Current - Reverse Leakage @ Vr: 50 µA @ 1700 V
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DSC6311JI2EB-018.4320T DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Spread Spectrum Bandwidth: ±2.00%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 18.432 MHz
Base Resonator: MEMS
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DSC6311JI2EB-018.4320 DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Spread Spectrum Bandwidth: ±2.00%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 18.432 MHz
Base Resonator: MEMS
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AT90PWM316-16SUR Atmel-7710-8-bit-Microcontroller-AT90PWM216-316_Datasheet-Summary.pdf
AT90PWM316-16SUR
Виробник: Microchip Technology
Description: IC MCU 8BIT 16KB FLASH 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Data Converters: A/D 11x10b; D/A 1x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-SOIC
Number of I/O: 27
DigiKey Programmable: Not Verified
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1N6134AUS/TR 1N6103AUS%20-%201N6137AUS.pdf
1N6134AUS/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+1030.99 грн
Мінімальне замовлення: 100
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1N6134AUS/TR 1N6103AUS%20-%201N6137AUS.pdf
1N6134AUS/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1110.65 грн
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JAN1N6134A 127891-lds-0277-datasheet
JAN1N6134A
Виробник: Microchip Technology
Description: TVS DIODE 114VWM 206.3VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTX1N6134A 127891-lds-0277-datasheet
JANTX1N6134A
Виробник: Microchip Technology
Description: TVS DIODE 114VWM 206.3VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTX1N6134AUS 127892-lds-0277-1-datasheet
JANTX1N6134AUS
Виробник: Microchip Technology
Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTX1N6134AUS/TR 1N6103AUS%20-%201N6137AUS.pdf
JANTX1N6134AUS/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JAN1N6134AUS 127892-lds-0277-1-datasheet
JAN1N6134AUS
Виробник: Microchip Technology
Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JAN1N6134AUS/TR 1N6103AUS%20-%201N6137AUS.pdf
JAN1N6134AUS/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTXV1N6134AUS/TR
JANTXV1N6134AUS/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTXV1N6134AUS 127892-lds-0277-1-datasheet
JANTXV1N6134AUS
Виробник: Microchip Technology
Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTXV1N6134A 127891-lds-0277-datasheet
JANTXV1N6134A
Виробник: Microchip Technology
Description: TVS DIODE 114VWM 206.3VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANS1N6134A
JANS1N6134A
Виробник: Microchip Technology
Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANS1N6134AUS
JANS1N6134AUS
Виробник: Microchip Technology
Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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JANS1N6134AUS/TR 1N6103AUS%20-%201N6137AUS.pdf
JANS1N6134AUS/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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MIC79050-4.2YMM MCRLS04931-1.pdf?t.download=true&u=5oefqw
MIC79050-4.2YMM
Виробник: Microchip Technology
Description: IC BATT CHG LI-ION 1CELL 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Number of Cells: 1
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Battery Chemistry: Lithium Ion
Supplier Device Package: 8-MSOP
Fault Protection: Over Current, Over Temperature, Reverse Battery, Reverse Current
Voltage - Supply (Max): 16V
Battery Pack Voltage: 4.2V
Current - Charging: Constant, Pulsed
на замовлення 175 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
95+233.07 грн
Мінімальне замовлення: 95
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MIC5339-MGYMT-TR mic5338.pdf
MIC5339-MGYMT-TR
Виробник: Microchip Technology
Description: IC REG LINEAR 1.8V/2.8V 6-TMLF
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad, 6-TMLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 58 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 6-TMLF® (1.6x1.6)
Voltage - Output (Min/Fixed): 1.8V, 2.8V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.38V @ 300mA, 0.38V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 135 µA
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MIC5339-MGYMT-TR mic5338.pdf
MIC5339-MGYMT-TR
Виробник: Microchip Technology
Description: IC REG LINEAR 1.8V/2.8V 6-TMLF
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad, 6-TMLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 58 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 6-TMLF® (1.6x1.6)
Voltage - Output (Min/Fixed): 1.8V, 2.8V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.38V @ 300mA, 0.38V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 135 µA
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RT4G150L-CQG352B
Виробник: Microchip Technology
Description: RT4G150L-CQG352B
Packaging: Bulk
Package / Case: 352-BFCQFP Exposed Pad and Tie Bar
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Supply: 1.14V ~ 1.26V
Number of Logic Elements/Cells: 151824
Supplier Device Package: 352-QFP (48x48)
Total RAM Bits: 5325
DigiKey Programmable: Not Verified
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MSMCGLCE70Ae3 10562-msmclce-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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DSC1124AI1-100.0000 DSC1104-24-Low-Jitter-Precision-HCSL-Oscillator-DS20005870B.pdf
DSC1124AI1-100.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 100.0000MHZ HCSL SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 42mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
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