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AT45DB161E-MHD-Y AT45DB161E-MHD-Y Microchip Technology AT45DB161E.pdf Description: IC FLASH 16MBIT SPI 85MHZ 8UDFN
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH
Clock Frequency: 85 MHz
Memory Format: FLASH
Supplier Device Package: 8-UDFN (5x6)
Write Cycle Time - Word, Page: 8µs, 6ms
Memory Interface: SPI
Memory Organization: 528 Bytes x 4096 pages
DigiKey Programmable: Not Verified
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MCP14A0155T-E/SN MCP14A0155T-E/SN Microchip Technology 20005470B.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 11.5ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
DigiKey Programmable: Not Verified
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MCP14A0155T-E/SN MCP14A0155T-E/SN Microchip Technology 20005470B.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 11.5ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
DigiKey Programmable: Not Verified
на замовлення 2927 шт:
термін постачання 21-31 дні (днів)
4+89.61 грн
25+73.58 грн
100+66.75 грн
Мінімальне замовлення: 4
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AT88SC0204CA-TH-T AT88SC0204CA-TH-T Microchip Technology Atmel-5202S-CryptoMem-AT88SC0204CA-Datasheet-Summary.pdf Description: IC SECURE MEMORY 8-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Secure Memory
Applications: Embedded, Smart Card
Supplier Device Package: 8-TSSOP
DigiKey Programmable: Not Verified
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S43100BF Microchip Technology Description: DIODE GEN PURP 1KV 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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MIC5201-3.0BS MIC5201-3.0BS Microchip Technology MIC5201-150mA-Low-Dropout-Regulator-DS20005718C.pdf Description: IC REG LINEAR 3V 150MA SOT-223-3
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 400 µA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3V
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.4V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 2 mA
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MCP47FEB28-E/MQ MCP47FEB28-E/MQ Microchip Technology MCP47FXBX48-Data-Sheet-DS200006368A.pdf Description: IC DAC 12BIT V-OUT 20VQFN
Packaging: Tube
Package / Case: 20-VQFN Exposed Pad
Output Type: Voltage - Buffered, Voltage - Unbuffered
Mounting Type: Surface Mount
Number of Bits: 12
Data Interface: I2C
Reference Type: External
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 2.7V ~ 5.5V
Voltage - Supply, Digital: 2.7V ~ 5.5V
Settling Time: 7.8µs (Typ)
Supplier Device Package: 20-VQFN (5x5)
Number of D/A Converters: 8
INL/DNL (LSB): ±1.5LSB, ±0.2
Differential Output: No
DigiKey Programmable: Not Verified
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AT89LP51RC2-20MU AT89LP51RC2-20MU Microchip Technology doc3722S.pdf Description: IC MCU 8BIT 32KB FLASH 44VQFN
Packaging: Tray
Package / Case: 44-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.375K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: 8051
Data Converters: A/D 7x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-VQFN (7x7)
Number of I/O: 40
DigiKey Programmable: Not Verified
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APT10026L2LLG APT10026L2LLG Microchip Technology APT10026L2LL_B.pdf Description: MOSFET N-CH 1000V 38A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V
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APT10026L2FLLG APT10026L2FLLG Microchip Technology APT10026L2FLL_A.pdf Description: MOSFET N-CH 1000V 38A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V
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APT10025JVFR APT10025JVFR Microchip Technology APT10025JVFR_A.pdf Description: MOSFET N-CH 1000V 34A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 990 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
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APT10026JLL APT10026JLL Microchip Technology APT10026JLL_A.pdf Description: MOSFET N-CH 1000V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V
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APT10026JFLL APT10026JFLL Microchip Technology APT10026JFLL_C.pdf Description: MOSFET N-CH 1000V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V
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MICRF022BM-FS24 MICRF022BM-FS24 Microchip Technology MCRLS06080-1.pdf?t.download=true&u=5oefqw Description: RF RX ASK/OOK 300-440MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 440MHz
Modulation or Protocol: ASK, OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.5V
Applications: RKE
Current - Receiving: 2.2mA
Data Rate (Max): 10kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 8-SOIC
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1N3491 Microchip Technology S%2CR35PF.pdf Description: DIODE STANDARD 50V 35A DO21
Packaging: Bulk
Package / Case: DO-208AA
Mounting Type: Press Fit
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-21
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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1N3491R Microchip Technology S%2CR35PF.pdf Description: DIODE STANDARD REV 50V 35A DO21
Packaging: Bulk
Package / Case: DO-208AA
Mounting Type: Press Fit
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-21
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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AT21CS11-STU11-T AT21CS11-STU11-T Microchip Technology AT21CS01-AT21CS11-1-Kbit-Serial-EEPROM-Data-Sheet-DS20005857.pdf Description: IC EEPROM 1KBIT 1-WIRE SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 4.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: SOT-23-3
Write Cycle Time - Word, Page: 5ms
Memory Interface: 1-Wire®
Memory Organization: 128 x 8
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AT21CS11-STU11-T AT21CS11-STU11-T Microchip Technology AT21CS01-AT21CS11-1-Kbit-Serial-EEPROM-Data-Sheet-DS20005857.pdf Description: IC EEPROM 1KBIT 1-WIRE SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 4.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: SOT-23-3
Write Cycle Time - Word, Page: 5ms
Memory Interface: 1-Wire®
Memory Organization: 128 x 8
на замовлення 4008 шт:
термін постачання 21-31 дні (днів)
19+18.96 грн
Мінімальне замовлення: 19
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AT21CS11-STU12-T AT21CS11-STU12-T Microchip Technology AT21CS01-AT21CS11-Serial-EEPROM-Unique-ID-Data-DS20005857.pdf Description: IC EEPROM 1KBIT 1-WIRE SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 4.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: SOT-23-3
Write Cycle Time - Word, Page: 5ms
Memory Interface: 1-Wire®
Memory Organization: 128 x 8
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AT21CS11-STU12-T AT21CS11-STU12-T Microchip Technology AT21CS01-AT21CS11-Serial-EEPROM-Unique-ID-Data-DS20005857.pdf Description: IC EEPROM 1KBIT 1-WIRE SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 4.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: SOT-23-3
Write Cycle Time - Word, Page: 5ms
Memory Interface: 1-Wire®
Memory Organization: 128 x 8
на замовлення 3894 шт:
термін постачання 21-31 дні (днів)
19+18.96 грн
25+17.66 грн
100+17.27 грн
Мінімальне замовлення: 19
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LG1657_DAISY_CHAIN Microchip Technology Description: LG1657_DAISY_CHAIN
Packaging: Bulk
For Use With/Related Products: FPGA
Accessory Type: Daisy-Chained Package
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MCP22301T-1I/KYX MCP22301T-1I/KYX Microchip Technology MCP22301-Stand-Alone-USB-Type-C-Power-Delivery-3-dot-1-Controller-DS20006887.pdf Description: STAND-ALONE USB TYPE-C/PD PORT C
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.97V ~ 3.63V, 4.75V ~ 5.25V
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 40-VQFN (6x6)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+120.57 грн
Мінімальне замовлення: 3000
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MCP22301T-1I/KYX MCP22301T-1I/KYX Microchip Technology MCP22301-Stand-Alone-USB-Type-C-Power-Delivery-3-dot-1-Controller-DS20006887.pdf Description: STAND-ALONE USB TYPE-C/PD PORT C
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.97V ~ 3.63V, 4.75V ~ 5.25V
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 40-VQFN (6x6)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+158.54 грн
25+127.38 грн
100+116.11 грн
Мінімальне замовлення: 3
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MCP22301T-2I/KYX MCP22301T-2I/KYX Microchip Technology MCP22301-Stand-Alone-USB-Type-C-Power-Delivery-3-dot-1-Controller-DS20006887.pdf Description: STAND-ALONE USB TYPE-C/PD PORT C
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.97V ~ 3.63V, 4.75V ~ 5.25V
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 40-VQFN (6x6)
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MCP22301T-2I/KYX MCP22301T-2I/KYX Microchip Technology MCP22301-Stand-Alone-USB-Type-C-Power-Delivery-3-dot-1-Controller-DS20006887.pdf Description: STAND-ALONE USB TYPE-C/PD PORT C
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.97V ~ 3.63V, 4.75V ~ 5.25V
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 40-VQFN (6x6)
на замовлення 2870 шт:
термін постачання 21-31 дні (днів)
3+160.26 грн
25+128.07 грн
100+116.81 грн
Мінімальне замовлення: 3
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MCP22301-1I/KYX MCP22301-1I/KYX Microchip Technology MCP22301-Stand-Alone-USB-Type-C-Power-Delivery-3-dot-1-Controller-DS20006887.pdf Description: STAND-ALONE USB TYPE-C/PD PORT C
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.97V ~ 3.63V, 4.75V ~ 5.25V
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 40-VQFN (6x6)
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MCP22301-2I/KYX MCP22301-2I/KYX Microchip Technology MCP22301-Stand-Alone-USB-Type-C-Power-Delivery-3-dot-1-Controller-DS20006887.pdf Description: STAND-ALONE USB TYPE-C/PD PORT C
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.97V ~ 3.63V, 4.75V ~ 5.25V
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 40-VQFN (6x6)
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1N411B Microchip Technology 1N3288-1N3297.pdf Description: DIODE GEN PURP 50V 100A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
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1N1396 Microchip Technology 1N3288-1N3297.pdf Description: DIODE GEN PURP 50V 100A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
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1N1398 Microchip Technology 1N3288-1N3297.pdf Description: DIODE GEN PURP 150V 100A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
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1N2134R Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 350V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 350 V
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1N2136A Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 450V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 450 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 450 V
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1N2134RA Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 350V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 350 V
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1N2134A Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 350V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 350 V
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1N2136R Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 450V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 450 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 450 V
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1N2132 Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 250V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 250 V
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1N2136 Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 450V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 450 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 450 V
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1N2130 Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 150V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
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1N2136RA Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 450V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 450 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 450 V
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1N2128 Microchip Technology S%2CR35.pdf Description: DIODE STANDARD 50V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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1N2130R Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 150V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
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1N2128R Microchip Technology S%2CR35.pdf Description: DIODE STANDARD REV 50V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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1N2132RA Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 250V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 250 V
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1N2132A Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 250V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 250 V
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1N2132R Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 250V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 250 V
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1N2464 Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 350V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 350 V
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1N2462 Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 250V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 250 V
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1N2130RA Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 150V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
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1N2130A Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 150V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
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1N2128AR Microchip Technology S%2CR35.pdf Description: DIODE STANDARD REV 50V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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1N2134 Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 350V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 350 V
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1N2128RA Microchip Technology S%2CR35.pdf Description: DIODE STANDARD REV 50V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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1N5812 1N5812 Microchip Technology 5858-1n5812-datasheet Description: DIODE GEN PURP 50V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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LAN8871T-I/PUA LAN8871T-I/PUA Microchip Technology LAN8870-LAN8871-LAN8872-Product-Brief-DS00004469.pdf Description: IC TRANSCEIVER FULL 1/1 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Number of Drivers/Receivers: 1/1
Data Rate: 100Mbps, 1Gbps
Protocol: Ethernet
Supplier Device Package: 48-VQFN (7x7)
Duplex: Full
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LAN8872T-I/PUA LAN8872T-I/PUA Microchip Technology LAN8870-LAN8871-LAN8872-Product-Brief-DS00004469.pdf Description: IC TRANSCEIVER FULL 1/1 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Number of Drivers/Receivers: 1/1
Data Rate: 100Mbps, 1Gbps
Protocol: Ethernet
Supplier Device Package: 48-VQFN (7x7)
Duplex: Full
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PIC16LF18425-I/SL PIC16LF18425-I/SL Microchip Technology 40001894B.pdf Description: IC MCU 8BIT 14KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 14KB (8K x 14)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 11x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: EUSART, I2C, LINbus, MSSP, SMBus/PMBus, RS-232, RS-485, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Number of I/O: 11
DigiKey Programmable: Not Verified
на замовлення 627 шт:
термін постачання 21-31 дні (днів)
4+103.39 грн
25+91.07 грн
100+82.66 грн
Мінімальне замовлення: 4
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PIC16F18056-E/SS PIC16F18056-E/SS Microchip Technology PIC16F18056-76-28-40-Pin-Microcontroller-Data-Sheet-40002325B.pdf Description: IC MCU 8BIT 28KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 28KB (28K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 24x10b SAR; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SMBus, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
на замовлення 511 шт:
термін постачання 21-31 дні (днів)
4+114.60 грн
25+101.36 грн
100+91.67 грн
Мінімальне замовлення: 4
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JANTX1N975BUR-1 Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 39V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Qualification: MIL-PRF-19500/117
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CD3031B CD3031B Microchip Technology 8358-cd3016b-cd3045b-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: Die
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 22.8 V
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PIC16LF627AT-I/SO PIC16LF627AT-I/SO Microchip Technology 40300C.pdf Description: IC MCU 8BIT 1.75KB FLASH 18SOIC
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1.75KB (1K x 14)
RAM Size: 224 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: PIC
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V
Connectivity: UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 18-SOIC
Number of I/O: 16
DigiKey Programmable: Verified
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
1100+218.63 грн
Мінімальне замовлення: 1100
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AT45DB161E-MHD-Y AT45DB161E.pdf
AT45DB161E-MHD-Y
Виробник: Microchip Technology
Description: IC FLASH 16MBIT SPI 85MHZ 8UDFN
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH
Clock Frequency: 85 MHz
Memory Format: FLASH
Supplier Device Package: 8-UDFN (5x6)
Write Cycle Time - Word, Page: 8µs, 6ms
Memory Interface: SPI
Memory Organization: 528 Bytes x 4096 pages
DigiKey Programmable: Not Verified
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MCP14A0155T-E/SN 20005470B.pdf
MCP14A0155T-E/SN
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 11.5ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
DigiKey Programmable: Not Verified
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MCP14A0155T-E/SN 20005470B.pdf
MCP14A0155T-E/SN
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 11.5ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
DigiKey Programmable: Not Verified
на замовлення 2927 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.61 грн
25+73.58 грн
100+66.75 грн
Мінімальне замовлення: 4
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AT88SC0204CA-TH-T Atmel-5202S-CryptoMem-AT88SC0204CA-Datasheet-Summary.pdf
AT88SC0204CA-TH-T
Виробник: Microchip Technology
Description: IC SECURE MEMORY 8-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Secure Memory
Applications: Embedded, Smart Card
Supplier Device Package: 8-TSSOP
DigiKey Programmable: Not Verified
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S43100BF
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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MIC5201-3.0BS MIC5201-150mA-Low-Dropout-Regulator-DS20005718C.pdf
MIC5201-3.0BS
Виробник: Microchip Technology
Description: IC REG LINEAR 3V 150MA SOT-223-3
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 400 µA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3V
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.4V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 2 mA
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MCP47FEB28-E/MQ MCP47FXBX48-Data-Sheet-DS200006368A.pdf
MCP47FEB28-E/MQ
Виробник: Microchip Technology
Description: IC DAC 12BIT V-OUT 20VQFN
Packaging: Tube
Package / Case: 20-VQFN Exposed Pad
Output Type: Voltage - Buffered, Voltage - Unbuffered
Mounting Type: Surface Mount
Number of Bits: 12
Data Interface: I2C
Reference Type: External
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 2.7V ~ 5.5V
Voltage - Supply, Digital: 2.7V ~ 5.5V
Settling Time: 7.8µs (Typ)
Supplier Device Package: 20-VQFN (5x5)
Number of D/A Converters: 8
INL/DNL (LSB): ±1.5LSB, ±0.2
Differential Output: No
DigiKey Programmable: Not Verified
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AT89LP51RC2-20MU doc3722S.pdf
AT89LP51RC2-20MU
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 44VQFN
Packaging: Tray
Package / Case: 44-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.375K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: 8051
Data Converters: A/D 7x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-VQFN (7x7)
Number of I/O: 40
DigiKey Programmable: Not Verified
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APT10026L2LLG APT10026L2LL_B.pdf
APT10026L2LLG
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 38A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V
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APT10026L2FLLG APT10026L2FLL_A.pdf
APT10026L2FLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 38A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V
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APT10025JVFR APT10025JVFR_A.pdf
APT10025JVFR
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 34A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 990 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
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APT10026JLL APT10026JLL_A.pdf
APT10026JLL
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V
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APT10026JFLL APT10026JFLL_C.pdf
APT10026JFLL
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V
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MICRF022BM-FS24 MCRLS06080-1.pdf?t.download=true&u=5oefqw
MICRF022BM-FS24
Виробник: Microchip Technology
Description: RF RX ASK/OOK 300-440MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 440MHz
Modulation or Protocol: ASK, OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.5V
Applications: RKE
Current - Receiving: 2.2mA
Data Rate (Max): 10kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 8-SOIC
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1N3491 S%2CR35PF.pdf
Виробник: Microchip Technology
Description: DIODE STANDARD 50V 35A DO21
Packaging: Bulk
Package / Case: DO-208AA
Mounting Type: Press Fit
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-21
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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1N3491R S%2CR35PF.pdf
Виробник: Microchip Technology
Description: DIODE STANDARD REV 50V 35A DO21
Packaging: Bulk
Package / Case: DO-208AA
Mounting Type: Press Fit
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-21
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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AT21CS11-STU11-T AT21CS01-AT21CS11-1-Kbit-Serial-EEPROM-Data-Sheet-DS20005857.pdf
AT21CS11-STU11-T
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT 1-WIRE SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 4.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: SOT-23-3
Write Cycle Time - Word, Page: 5ms
Memory Interface: 1-Wire®
Memory Organization: 128 x 8
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AT21CS11-STU11-T AT21CS01-AT21CS11-1-Kbit-Serial-EEPROM-Data-Sheet-DS20005857.pdf
AT21CS11-STU11-T
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT 1-WIRE SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 4.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: SOT-23-3
Write Cycle Time - Word, Page: 5ms
Memory Interface: 1-Wire®
Memory Organization: 128 x 8
на замовлення 4008 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+18.96 грн
Мінімальне замовлення: 19
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AT21CS11-STU12-T AT21CS01-AT21CS11-Serial-EEPROM-Unique-ID-Data-DS20005857.pdf
AT21CS11-STU12-T
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT 1-WIRE SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 4.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: SOT-23-3
Write Cycle Time - Word, Page: 5ms
Memory Interface: 1-Wire®
Memory Organization: 128 x 8
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AT21CS11-STU12-T AT21CS01-AT21CS11-Serial-EEPROM-Unique-ID-Data-DS20005857.pdf
AT21CS11-STU12-T
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT 1-WIRE SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 4.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: SOT-23-3
Write Cycle Time - Word, Page: 5ms
Memory Interface: 1-Wire®
Memory Organization: 128 x 8
на замовлення 3894 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+18.96 грн
25+17.66 грн
100+17.27 грн
Мінімальне замовлення: 19
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LG1657_DAISY_CHAIN
Виробник: Microchip Technology
Description: LG1657_DAISY_CHAIN
Packaging: Bulk
For Use With/Related Products: FPGA
Accessory Type: Daisy-Chained Package
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MCP22301T-1I/KYX MCP22301-Stand-Alone-USB-Type-C-Power-Delivery-3-dot-1-Controller-DS20006887.pdf
MCP22301T-1I/KYX
Виробник: Microchip Technology
Description: STAND-ALONE USB TYPE-C/PD PORT C
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.97V ~ 3.63V, 4.75V ~ 5.25V
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 40-VQFN (6x6)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+120.57 грн
Мінімальне замовлення: 3000
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MCP22301T-1I/KYX MCP22301-Stand-Alone-USB-Type-C-Power-Delivery-3-dot-1-Controller-DS20006887.pdf
MCP22301T-1I/KYX
Виробник: Microchip Technology
Description: STAND-ALONE USB TYPE-C/PD PORT C
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.97V ~ 3.63V, 4.75V ~ 5.25V
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 40-VQFN (6x6)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+158.54 грн
25+127.38 грн
100+116.11 грн
Мінімальне замовлення: 3
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MCP22301T-2I/KYX MCP22301-Stand-Alone-USB-Type-C-Power-Delivery-3-dot-1-Controller-DS20006887.pdf
MCP22301T-2I/KYX
Виробник: Microchip Technology
Description: STAND-ALONE USB TYPE-C/PD PORT C
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.97V ~ 3.63V, 4.75V ~ 5.25V
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 40-VQFN (6x6)
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MCP22301T-2I/KYX MCP22301-Stand-Alone-USB-Type-C-Power-Delivery-3-dot-1-Controller-DS20006887.pdf
MCP22301T-2I/KYX
Виробник: Microchip Technology
Description: STAND-ALONE USB TYPE-C/PD PORT C
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.97V ~ 3.63V, 4.75V ~ 5.25V
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 40-VQFN (6x6)
на замовлення 2870 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+160.26 грн
25+128.07 грн
100+116.81 грн
Мінімальне замовлення: 3
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MCP22301-1I/KYX MCP22301-Stand-Alone-USB-Type-C-Power-Delivery-3-dot-1-Controller-DS20006887.pdf
MCP22301-1I/KYX
Виробник: Microchip Technology
Description: STAND-ALONE USB TYPE-C/PD PORT C
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.97V ~ 3.63V, 4.75V ~ 5.25V
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 40-VQFN (6x6)
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MCP22301-2I/KYX MCP22301-Stand-Alone-USB-Type-C-Power-Delivery-3-dot-1-Controller-DS20006887.pdf
MCP22301-2I/KYX
Виробник: Microchip Technology
Description: STAND-ALONE USB TYPE-C/PD PORT C
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.97V ~ 3.63V, 4.75V ~ 5.25V
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 40-VQFN (6x6)
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1N411B 1N3288-1N3297.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 100A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
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1N1396 1N3288-1N3297.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 100A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
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1N1398 1N3288-1N3297.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 100A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
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1N2134R S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 350V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 350 V
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1N2136A S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 450V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 450 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 450 V
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1N2134RA S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 350V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 350 V
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1N2134A S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 350V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 350 V
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1N2136R S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 450V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 450 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 450 V
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1N2132 S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 250V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 250 V
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1N2136 S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 450V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 450 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 450 V
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1N2130 S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
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1N2136RA S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 450V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 450 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 450 V
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1N2128 S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE STANDARD 50V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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1N2130R S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 150V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
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1N2128R S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE STANDARD REV 50V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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1N2132RA S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 250V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 250 V
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1N2132A S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 250V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 250 V
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1N2132R S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 250V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 250 V
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1N2464 S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 350V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 350 V
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1N2462 S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 250V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 250 V
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1N2130RA S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 150V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
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1N2130A S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
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1N2128AR S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE STANDARD REV 50V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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1N2134 S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 350V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 350 V
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1N2128RA S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE STANDARD REV 50V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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1N5812 5858-1n5812-datasheet
1N5812
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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LAN8871T-I/PUA LAN8870-LAN8871-LAN8872-Product-Brief-DS00004469.pdf
LAN8871T-I/PUA
Виробник: Microchip Technology
Description: IC TRANSCEIVER FULL 1/1 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Number of Drivers/Receivers: 1/1
Data Rate: 100Mbps, 1Gbps
Protocol: Ethernet
Supplier Device Package: 48-VQFN (7x7)
Duplex: Full
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LAN8872T-I/PUA LAN8870-LAN8871-LAN8872-Product-Brief-DS00004469.pdf
LAN8872T-I/PUA
Виробник: Microchip Technology
Description: IC TRANSCEIVER FULL 1/1 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Number of Drivers/Receivers: 1/1
Data Rate: 100Mbps, 1Gbps
Protocol: Ethernet
Supplier Device Package: 48-VQFN (7x7)
Duplex: Full
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PIC16LF18425-I/SL 40001894B.pdf
PIC16LF18425-I/SL
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 14KB (8K x 14)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 11x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: EUSART, I2C, LINbus, MSSP, SMBus/PMBus, RS-232, RS-485, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Number of I/O: 11
DigiKey Programmable: Not Verified
на замовлення 627 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.39 грн
25+91.07 грн
100+82.66 грн
Мінімальне замовлення: 4
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PIC16F18056-E/SS PIC16F18056-76-28-40-Pin-Microcontroller-Data-Sheet-40002325B.pdf
PIC16F18056-E/SS
Виробник: Microchip Technology
Description: IC MCU 8BIT 28KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 28KB (28K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 24x10b SAR; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SMBus, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
на замовлення 511 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+114.60 грн
25+101.36 грн
100+91.67 грн
Мінімальне замовлення: 4
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JANTX1N975BUR-1 5917-1n962bur-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 39V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Qualification: MIL-PRF-19500/117
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CD3031B 8358-cd3016b-cd3045b-datasheet
CD3031B
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: Die
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 22.8 V
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PIC16LF627AT-I/SO 40300C.pdf
PIC16LF627AT-I/SO
Виробник: Microchip Technology
Description: IC MCU 8BIT 1.75KB FLASH 18SOIC
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1.75KB (1K x 14)
RAM Size: 224 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: PIC
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V
Connectivity: UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 18-SOIC
Number of I/O: 16
DigiKey Programmable: Verified
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1100+218.63 грн
Мінімальне замовлення: 1100
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