Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (359184) > Сторінка 3401 з 5987
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGT75DDA60T3G | MICROCHIP TECHNOLOGY |
 APTGT75DDA60T3G IGBT modules |
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| APTGT75DH120T3G | MICROCHIP TECHNOLOGY |
APTGT75DH120T3G IGBT modules |
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| APTGT75DU120TG | MICROCHIP TECHNOLOGY |
APTGT75DU120TG IGBT modules |
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| APTGT75H120TG | MICROCHIP TECHNOLOGY |
APTGT75H120TG IGBT modules |
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| APTGT75H60T1G | MICROCHIP TECHNOLOGY |
APTGT75H60T1G IGBT modules |
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| APTGT75H60T3G | MICROCHIP TECHNOLOGY |
APTGT75H60T3G IGBT modules |
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| APTGT75SK120TG | MICROCHIP TECHNOLOGY |
APTGT75SK120TG IGBT modules |
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| APTGT75TA120PG | MICROCHIP TECHNOLOGY |
APTGT75TA120PG IGBT modules |
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| APTGT75TDU120PG | MICROCHIP TECHNOLOGY |
APTGT75TDU120PG IGBT modules |
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| APTGT75TDU60PG | MICROCHIP TECHNOLOGY |
APTGT75TDU60PG IGBT modules |
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| APTGT75TL60T3G | MICROCHIP TECHNOLOGY |
APTGT75TL60T3G IGBT modules |
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| APTGT75X60T3G | MICROCHIP TECHNOLOGY |
APTGT75X60T3G IGBT modules |
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| APTGTQ100A65T1G | MICROCHIP TECHNOLOGY |
APTGTQ100A65T1G IGBT modules |
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| APTGTQ100DA65T1G | MICROCHIP TECHNOLOGY |
APTGTQ100DA65T1G IGBT modules |
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| APTGTQ100DDA65T3G | MICROCHIP TECHNOLOGY |
APTGTQ100DDA65T3G IGBT modules |
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| APTGTQ100H65T3G | MICROCHIP TECHNOLOGY |
APTGTQ100H65T3G IGBT modules |
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| APTGTQ100SK65T1G | MICROCHIP TECHNOLOGY |
APTGTQ100SK65T1G IGBT modules |
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| APTGTQ150TA65TPG | MICROCHIP TECHNOLOGY |
APTGTQ150TA65TPG IGBT modules |
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| APTGTQ200A65T3G | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A Application: motors Case: SP3F Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 400A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; Trench Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT кількість в упаковці: 1 шт |
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| APTGTQ200DA65T3G | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Application: motors Case: SP3F Max. off-state voltage: 650V Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 400A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; Trench Topology: boost chopper; NTC thermistor Type of semiconductor module: IGBT кількість в упаковці: 13 шт |
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| APTGTQ200SK65T3G | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor Application: motors Case: SP3F Max. off-state voltage: 650V Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 400A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; Trench Topology: buck chopper; NTC thermistor Type of semiconductor module: IGBT кількість в упаковці: 13 шт |
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| APTGTQ50TA65T3G | MICROCHIP TECHNOLOGY |
APTGTQ50TA65T3G IGBT modules |
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| APTLGL325A1208G | MICROCHIP TECHNOLOGY |
APTLGL325A1208G IGBT modules |
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| APTLGT300A1208G | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV Type of semiconductor module: IPM Topology: IGBT half-bridge Case: LP8 Application: for UPS; motors; SMPS Mounting: pin header; screw Operating temperature: -40...85°C Technology: Field Stop; Trench Voltage class: 1.2kV Supply voltage: 4.5...5.5V DC Frequency: 45kHz Output current: 300A Kind of output: IGBT driver Integrated circuit features: integrated DC/DC converter кількість в упаковці: 3 шт |
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| APTLGT400A608G | MICROCHIP TECHNOLOGY |
APTLGT400A608G IGBT modules |
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| APTM08TAM04PG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 75V; 90A; SP6P; Press-in PCB; 138W Electrical mounting: Press-in PCB Mechanical mounting: screw Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 250A Type of semiconductor module: MOSFET transistor Case: SP6P Semiconductor structure: transistor/transistor Drain-source voltage: 75V Drain current: 90A On-state resistance: 4.5mΩ Power dissipation: 138W кількість в упаковці: 1 шт |
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| APTM100A13DG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes Pulsed drain current: 240A Case: SP6C кількість в упаковці: 1 шт |
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| APTM100A13SCG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Pulsed drain current: 240A Case: SP6C кількість в упаковці: 1 шт |
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| APTM100A13SG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Pulsed drain current: 240A Case: SP6C кількість в упаковці: 1 шт |
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| APTM100A18FTG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 33A; SP4; Idm: 172A; 780W; screw Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 33A On-state resistance: 0.21Ω Power dissipation: 780W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 172A Case: SP4 кількість в упаковці: 1 шт |
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| APTM100A23STG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 27A On-state resistance: 0.27Ω Power dissipation: 694W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor Pulsed drain current: 144A Case: SP4 кількість в упаковці: 1 шт |
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| APTM100AM90FG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 59A On-state resistance: 0.105Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 312A Case: SP6C кількість в упаковці: 1 шт |
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| APTM100DA18TG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 33A On-state resistance: 0.21Ω Power dissipation: 780W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper; NTC thermistor Pulsed drain current: 172A Case: SP4 кількість в упаковці: 1 шт |
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| APTM100DAM90G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 59A On-state resistance: 0.105Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 312A Case: SP6C кількість в упаковці: 1 шт |
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| APTM100DSK35T3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: buck chopper x2; NTC thermistor Pulsed drain current: 88A Case: SP3 кількість в упаковці: 1 шт |
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| APTM100H18FG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 33A On-state resistance: 0.21Ω Power dissipation: 780W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Pulsed drain current: 172A Case: SP6C кількість в упаковці: 1 шт |
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| APTM100H35FT3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 88A Case: SP3 кількість в упаковці: 1 шт |
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| APTM100H35FTG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 88A Case: SP4 кількість в упаковці: 1 шт |
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| APTM100H45FT3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 72A Case: SP3 кількість в упаковці: 1 шт |
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| APTM100H45SCTG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 72A Case: SP4 кількість в упаковці: 1 шт |
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| APTM100H45STG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Power dissipation: 357W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor Pulsed drain current: 72A Case: SP4 кількість в упаковці: 1 шт |
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| APTM100H46FT3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 552mΩ Power dissipation: 357W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 120A Case: SP3 кількість в упаковці: 1 шт |
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| APTM100SK33T1G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 396mΩ Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: buck chopper; NTC thermistor Pulsed drain current: 140A Case: SP1 кількість в упаковці: 1 шт |
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| APTM100TA35FPG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 88A Case: SP6P кількість в упаковці: 1 шт |
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| APTM100TA35SCTPG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: NTC thermistor Pulsed drain current: 88A Case: SP6P кількість в упаковці: 1 шт |
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| APTM100UM45DAG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 160A On-state resistance: 52mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode Pulsed drain current: 860A Case: SP6C кількість в упаковці: 1 шт |
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| APTM100UM45FAG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 160A; SP6C; Polarisation: unipolar Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 160A On-state resistance: 52mΩ Power dissipation: 5kW Polarisation: unipolar Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Pulsed drain current: 860A Case: SP6C кількість в упаковці: 1 шт |
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| APTM100UM60FAG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 97A; SP6C; Polarisation: unipolar Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 97A On-state resistance: 70mΩ Power dissipation: 2272W Polarisation: unipolar Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Pulsed drain current: 516A Case: SP6C кількість в упаковці: 1 шт |
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| APTM100UM65DAG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 110A; SP6C; Polarisation: unipolar Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 110A On-state resistance: 78mΩ Power dissipation: 3.25kW Polarisation: unipolar Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Pulsed drain current: 580A Case: SP6C кількість в упаковці: 1 шт |
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| APTM100UM65SAG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 110A On-state resistance: 78mΩ Power dissipation: 3.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Pulsed drain current: 580A Case: SP6C кількість в упаковці: 1 шт |
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| APTM100UM65SCAVG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 110A On-state resistance: 78mΩ Power dissipation: 3.25kW Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Pulsed drain current: 580A Case: SP6 кількість в упаковці: 1 шт |
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| APTM10AM02FG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 1900A Case: SP6C кількість в упаковці: 1 шт |
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| APTM10AM05FTG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 207A On-state resistance: 5mΩ Power dissipation: 780W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 1100A Case: SP4 кількість в упаковці: 1 шт |
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В кошику од. на суму грн. | |
| APTM10DAM02G | MICROCHIP TECHNOLOGY |
APTM10DAM02G Transistor modules MOSFET |
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В кошику од. на суму грн. | |
| APTM10DAM05TG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Electrical mounting: FASTON connectors; screw Case: SP4 Mechanical mounting: screw Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 207A On-state resistance: 5mΩ Power dissipation: 780W Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper; NTC thermistor Pulsed drain current: 1100A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| APTM10DHM05G | MICROCHIP TECHNOLOGY |
APTM10DHM05G Transistor modules MOSFET |
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В кошику од. на суму грн. | |
| APTM10DSKM09T3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 100A Topology: buck chopper x2; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 430A Power dissipation: 390W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw Case: SP3 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| APTM10DSKM19T3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Topology: buck chopper x2; NTC thermistor Case: SP3 Electrical mounting: Press-in PCB Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 300A Drain current: 50A Drain-source voltage: 100V On-state resistance: 21mΩ Power dissipation: 208W Technology: POWER MOS 5® кількість в упаковці: 1 шт |
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В кошику од. на суму грн. | |
| APTM10DUM02G | MICROCHIP TECHNOLOGY |
APTM10DUM02G Transistor modules MOSFET |
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В кошику од. на суму грн. | |
| APTM10HM05FG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 207A; SP6C; Idm: 1100A; 780W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 207A Case: SP6C Topology: H-bridge Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw Power dissipation: 780W Pulsed drain current: 1100A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. |
| APTGT75DDA60T3G |
|
Виробник: MICROCHIP TECHNOLOGY
APTGT75DDA60T3G IGBT modules
APTGT75DDA60T3G IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGT75DH120T3G |
|
Виробник: MICROCHIP TECHNOLOGY
APTGT75DH120T3G IGBT modules
APTGT75DH120T3G IGBT modules
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В кошику
од. на суму грн.
| APTGT75DU120TG |
|
Виробник: MICROCHIP TECHNOLOGY
APTGT75DU120TG IGBT modules
APTGT75DU120TG IGBT modules
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В кошику
од. на суму грн.
| APTGT75H120TG |
|
Виробник: MICROCHIP TECHNOLOGY
APTGT75H120TG IGBT modules
APTGT75H120TG IGBT modules
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В кошику
од. на суму грн.
| APTGT75H60T1G |
|
Виробник: MICROCHIP TECHNOLOGY
APTGT75H60T1G IGBT modules
APTGT75H60T1G IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGT75H60T3G |
|
Виробник: MICROCHIP TECHNOLOGY
APTGT75H60T3G IGBT modules
APTGT75H60T3G IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGT75SK120TG |
|
Виробник: MICROCHIP TECHNOLOGY
APTGT75SK120TG IGBT modules
APTGT75SK120TG IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGT75TA120PG |
|
Виробник: MICROCHIP TECHNOLOGY
APTGT75TA120PG IGBT modules
APTGT75TA120PG IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGT75TDU120PG |
|
Виробник: MICROCHIP TECHNOLOGY
APTGT75TDU120PG IGBT modules
APTGT75TDU120PG IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGT75TDU60PG |
|
Виробник: MICROCHIP TECHNOLOGY
APTGT75TDU60PG IGBT modules
APTGT75TDU60PG IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGT75TL60T3G |
|
Виробник: MICROCHIP TECHNOLOGY
APTGT75TL60T3G IGBT modules
APTGT75TL60T3G IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGT75X60T3G |
|
Виробник: MICROCHIP TECHNOLOGY
APTGT75X60T3G IGBT modules
APTGT75X60T3G IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGTQ100A65T1G |
|
Виробник: MICROCHIP TECHNOLOGY
APTGTQ100A65T1G IGBT modules
APTGTQ100A65T1G IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGTQ100DA65T1G |
|
Виробник: MICROCHIP TECHNOLOGY
APTGTQ100DA65T1G IGBT modules
APTGTQ100DA65T1G IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGTQ100DDA65T3G |
|
Виробник: MICROCHIP TECHNOLOGY
APTGTQ100DDA65T3G IGBT modules
APTGTQ100DDA65T3G IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGTQ100H65T3G |
|
Виробник: MICROCHIP TECHNOLOGY
APTGTQ100H65T3G IGBT modules
APTGTQ100H65T3G IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGTQ100SK65T1G |
|
Виробник: MICROCHIP TECHNOLOGY
APTGTQ100SK65T1G IGBT modules
APTGTQ100SK65T1G IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGTQ150TA65TPG |
|
Виробник: MICROCHIP TECHNOLOGY
APTGTQ150TA65TPG IGBT modules
APTGTQ150TA65TPG IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTGTQ200A65T3G |
|
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A
Application: motors
Case: SP3F
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A
Application: motors
Case: SP3F
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTGTQ200DA65T3G |
|
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Application: motors
Case: SP3F
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: boost chopper; NTC thermistor
Type of semiconductor module: IGBT
кількість в упаковці: 13 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Application: motors
Case: SP3F
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: boost chopper; NTC thermistor
Type of semiconductor module: IGBT
кількість в упаковці: 13 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTGTQ200SK65T3G |
|
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Application: motors
Case: SP3F
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: buck chopper; NTC thermistor
Type of semiconductor module: IGBT
кількість в упаковці: 13 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Application: motors
Case: SP3F
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: buck chopper; NTC thermistor
Type of semiconductor module: IGBT
кількість в упаковці: 13 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTGTQ50TA65T3G |
|
Виробник: MICROCHIP TECHNOLOGY
APTGTQ50TA65T3G IGBT modules
APTGTQ50TA65T3G IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTLGL325A1208G |
|
Виробник: MICROCHIP TECHNOLOGY
APTLGL325A1208G IGBT modules
APTLGL325A1208G IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTLGT300A1208G |
|
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV
Type of semiconductor module: IPM
Topology: IGBT half-bridge
Case: LP8
Application: for UPS; motors; SMPS
Mounting: pin header; screw
Operating temperature: -40...85°C
Technology: Field Stop; Trench
Voltage class: 1.2kV
Supply voltage: 4.5...5.5V DC
Frequency: 45kHz
Output current: 300A
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
кількість в упаковці: 3 шт
Category: IGBT modules
Description: Module: IPM; IGBT half-bridge; LP8; for UPS,motors,SMPS; 1.2kV
Type of semiconductor module: IPM
Topology: IGBT half-bridge
Case: LP8
Application: for UPS; motors; SMPS
Mounting: pin header; screw
Operating temperature: -40...85°C
Technology: Field Stop; Trench
Voltage class: 1.2kV
Supply voltage: 4.5...5.5V DC
Frequency: 45kHz
Output current: 300A
Kind of output: IGBT driver
Integrated circuit features: integrated DC/DC converter
кількість в упаковці: 3 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTLGT400A608G |
|
Виробник: MICROCHIP TECHNOLOGY
APTLGT400A608G IGBT modules
APTLGT400A608G IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| APTM08TAM04PG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 75V; 90A; SP6P; Press-in PCB; 138W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 250A
Type of semiconductor module: MOSFET transistor
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 75V
Drain current: 90A
On-state resistance: 4.5mΩ
Power dissipation: 138W
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 75V; 90A; SP6P; Press-in PCB; 138W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 250A
Type of semiconductor module: MOSFET transistor
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 75V
Drain current: 90A
On-state resistance: 4.5mΩ
Power dissipation: 138W
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100A13DG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes
Pulsed drain current: 240A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes
Pulsed drain current: 240A
Case: SP6C
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100A13SCG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Pulsed drain current: 240A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Pulsed drain current: 240A
Case: SP6C
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100A13SG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Pulsed drain current: 240A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 49A
On-state resistance: 156mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Pulsed drain current: 240A
Case: SP6C
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100A18FTG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP4; Idm: 172A; 780W; screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 172A
Case: SP4
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP4; Idm: 172A; 780W; screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 172A
Case: SP4
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100A23STG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 27A
On-state resistance: 0.27Ω
Power dissipation: 694W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor
Pulsed drain current: 144A
Case: SP4
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 27A
On-state resistance: 0.27Ω
Power dissipation: 694W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor
Pulsed drain current: 144A
Case: SP4
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100AM90FG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 59A
On-state resistance: 0.105Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 312A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 59A
On-state resistance: 0.105Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 312A
Case: SP6C
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100DA18TG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 172A
Case: SP4
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 33A; SP4; FASTON connectors,screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 172A
Case: SP4
кількість в упаковці: 1 шт
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В кошику
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| APTM100DAM90G |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 59A
On-state resistance: 0.105Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 312A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 59A
On-state resistance: 0.105Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 312A
Case: SP6C
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100DSK35T3G |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: buck chopper x2; NTC thermistor
Pulsed drain current: 88A
Case: SP3
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: buck chopper x2; NTC thermistor
Pulsed drain current: 88A
Case: SP3
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100H18FG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Pulsed drain current: 172A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 33A
On-state resistance: 0.21Ω
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Pulsed drain current: 172A
Case: SP6C
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100H35FT3G |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Case: SP3
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Case: SP3
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100H35FTG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Case: SP4
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Case: SP4
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100H45FT3G |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 72A
Case: SP3
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 72A
Case: SP3
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100H45SCTG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 72A
Case: SP4
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 72A
Case: SP4
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100H45STG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
Pulsed drain current: 72A
Case: SP4
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 14A; SP4; FASTON connectors,screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Power dissipation: 357W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
Pulsed drain current: 72A
Case: SP4
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100H46FT3G |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 552mΩ
Power dissipation: 357W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 120A
Case: SP3
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 552mΩ
Power dissipation: 357W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 120A
Case: SP3
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100SK33T1G |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 396mΩ
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 140A
Case: SP1
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 396mΩ
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 140A
Case: SP1
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100TA35FPG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 88A
Case: SP6P
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 88A
Case: SP6P
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100TA35SCTPG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: NTC thermistor
Pulsed drain current: 88A
Case: SP6P
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 17A
On-state resistance: 0.42Ω
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: NTC thermistor
Pulsed drain current: 88A
Case: SP6P
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100UM45DAG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode
Pulsed drain current: 860A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode
Pulsed drain current: 860A
Case: SP6C
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| APTM100UM45FAG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 160A; SP6C; Polarisation: unipolar
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Polarisation: unipolar
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 860A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 160A; SP6C; Polarisation: unipolar
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 160A
On-state resistance: 52mΩ
Power dissipation: 5kW
Polarisation: unipolar
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 860A
Case: SP6C
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100UM60FAG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 97A; SP6C; Polarisation: unipolar
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 97A
On-state resistance: 70mΩ
Power dissipation: 2272W
Polarisation: unipolar
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 516A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 97A; SP6C; Polarisation: unipolar
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 97A
On-state resistance: 70mΩ
Power dissipation: 2272W
Polarisation: unipolar
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 516A
Case: SP6C
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100UM65DAG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 110A; SP6C; Polarisation: unipolar
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Polarisation: unipolar
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 580A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 110A; SP6C; Polarisation: unipolar
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Polarisation: unipolar
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 580A
Case: SP6C
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM100UM65SAG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 580A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 110A; SP6C; Idm: 580A; 3.25kW; screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 580A
Case: SP6C
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| APTM100UM65SCAVG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Electrical mounting: screw
Mechanical mounting: screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 580A
Case: SP6
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 110A
On-state resistance: 78mΩ
Power dissipation: 3.25kW
Electrical mounting: screw
Mechanical mounting: screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 580A
Case: SP6
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| APTM10AM02FG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1900A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1900A
Case: SP6C
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM10AM05FTG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 207A
On-state resistance: 5mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 1100A
Case: SP4
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 207A
On-state resistance: 5mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 1100A
Case: SP4
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM10DAM02G |
|
Виробник: MICROCHIP TECHNOLOGY
APTM10DAM02G Transistor modules MOSFET
APTM10DAM02G Transistor modules MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| APTM10DAM05TG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Electrical mounting: FASTON connectors; screw
Case: SP4
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
On-state resistance: 5mΩ
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 1100A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Electrical mounting: FASTON connectors; screw
Case: SP4
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
On-state resistance: 5mΩ
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 1100A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM10DHM05G |
|
Виробник: MICROCHIP TECHNOLOGY
APTM10DHM05G Transistor modules MOSFET
APTM10DHM05G Transistor modules MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| APTM10DSKM09T3G |
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 100A
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 430A
Power dissipation: 390W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Case: SP3
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 100A
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 430A
Power dissipation: 390W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Case: SP3
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM10DSKM19T3G |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Topology: buck chopper x2; NTC thermistor
Case: SP3
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 300A
Drain current: 50A
Drain-source voltage: 100V
On-state resistance: 21mΩ
Power dissipation: 208W
Technology: POWER MOS 5®
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Topology: buck chopper x2; NTC thermistor
Case: SP3
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 300A
Drain current: 50A
Drain-source voltage: 100V
On-state resistance: 21mΩ
Power dissipation: 208W
Technology: POWER MOS 5®
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| APTM10DUM02G |
|
Виробник: MICROCHIP TECHNOLOGY
APTM10DUM02G Transistor modules MOSFET
APTM10DUM02G Transistor modules MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| APTM10HM05FG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 207A; SP6C; Idm: 1100A; 780W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP6C
Topology: H-bridge
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Power dissipation: 780W
Pulsed drain current: 1100A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 207A; SP6C; Idm: 1100A; 780W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP6C
Topology: H-bridge
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Power dissipation: 780W
Pulsed drain current: 1100A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.