Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (294645) > Сторінка 4780 з 4911
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SMBJ22CAE3/TR13 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 24.4V; 16.9A; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Max. forward impulse current: 16.9A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 3000pcs. Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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MASMBJ22CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 24.4V; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | ||||||||||
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MASMBJ22CAe3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 24.4V; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | ||||||||||
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MSMBJ22CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 24.4V; 16.9A; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Max. forward impulse current: 16.9A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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MSMBJ22CA/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 24.4V; 16.9A; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Max. forward impulse current: 16.9A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Kind of package: reel; tape Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 700 шт В кошику од. на суму грн. | ||||||||||
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MSMBJ22CAE3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 24.4V; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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SMCJ22CAE3/TR13 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 24.4V; 42.2A; bidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Max. forward impulse current: 42.2A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer standard package: 3000pcs. Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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MSMCJ22CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 24.4V; 42.2A; bidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Max. forward impulse current: 42.2A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||
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MASMCJ22CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 24.4V; bidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | ||||||||||
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MASMCJ22CAe3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 24.4V; bidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | ||||||||||
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MSMCJ22CA/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 24.4V; 42.2A; bidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Max. forward impulse current: 42.2A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Kind of package: reel; tape Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||
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MSMCJ22CAe3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 24.4V; bidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||
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MSMCJ22CAE3/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 24.4V; 42.2A; bidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 22V Breakdown voltage: 24.4V Max. forward impulse current: 42.2A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Kind of package: reel; tape Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||
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MCP2200-I/SO | MICROCHIP TECHNOLOGY |
Category: USB interfaces - integrated circuits Description: IC: USB controller; UART; 256BEEPROM; 3÷5.5VDC; SO20; tube Interface: UART Operating temperature: -40...85°C Supply voltage: 3...5.5V DC Mounting: SMD Manufacturer standard package: 38pcs. TX/RX buffer size: 64 B/64 B Number of inputs/outputs: 8 Type of integrated circuit: USB controller Data transfer rate: 1Mbps Integrated circuit features: interface circuit Memory: 256B EEPROM Kind of package: tube Case: SO20 Number of channels: 1 |
на замовлення 33 шт: термін постачання 14-30 дні (днів) |
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MCP2200-I/SS | MICROCHIP TECHNOLOGY |
Category: USB interfaces - integrated circuits Description: IC: USB controller; UART; 256BEEPROM; 3÷5.5VDC; SSOP20; tube Interface: UART Operating temperature: -40...85°C Supply voltage: 3...5.5V DC Mounting: SMD Manufacturer standard package: 67pcs. TX/RX buffer size: 64 B/64 B Number of inputs/outputs: 8 Type of integrated circuit: USB controller Data transfer rate: 1Mbps Integrated circuit features: interface circuit Memory: 256B EEPROM Kind of package: tube Case: SSOP20 Number of channels: 1 |
на замовлення 110 шт: термін постачання 14-30 дні (днів) |
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MCP2200-I/MQ | MICROCHIP TECHNOLOGY |
Category: USB interfaces - integrated circuits Description: IC: USB controller; UART; 256BEEPROM; 3÷5.5VDC; QFN20; tube Interface: UART Operating temperature: -40...85°C Supply voltage: 3...5.5V DC Mounting: SMD Manufacturer standard package: 73pcs. TX/RX buffer size: 64 B/64 B Number of inputs/outputs: 8 Type of integrated circuit: USB controller Data transfer rate: 1Mbps Integrated circuit features: interface circuit Memory: 256B EEPROM Kind of package: tube Case: QFN20 Number of channels: 1 |
на замовлення 357 шт: термін постачання 14-30 дні (днів) |
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MCP2221A-I/SL | MICROCHIP TECHNOLOGY |
Category: USB interfaces - integrated circuitsDescription: IC: USB controller; I2C,UART; 3÷5.5VDC; SO14; tube Interface: I2C; UART Operating temperature: -40...85°C Supply voltage: 3...5.5V DC Mounting: SMD Manufacturer standard package: 57pcs. TX/RX buffer size: 64 B/64 B Number of inputs/outputs: 4 Type of integrated circuit: USB controller Data transfer rate: 400kbps Integrated circuit features: interface circuit Kind of package: tube Case: SO14 Number of channels: 1 |
на замовлення 96 шт: термін постачання 14-30 дні (днів) |
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MCP2221A-I/P | MICROCHIP TECHNOLOGY |
Category: USB interfaces - integrated circuitsDescription: IC: USB controller; I2C,UART; 3÷5.5VDC; DIP14; tube Interface: I2C; UART Operating temperature: -40...85°C Supply voltage: 3...5.5V DC Mounting: THT Manufacturer standard package: 30pcs. TX/RX buffer size: 64 B/64 B Number of inputs/outputs: 4 Type of integrated circuit: USB controller Data transfer rate: 400kbps Integrated circuit features: interface circuit Kind of package: tube Case: DIP14 Number of channels: 1 |
на замовлення 187 шт: термін постачання 14-30 дні (днів) |
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MCP2221A-I/ST | MICROCHIP TECHNOLOGY |
Category: USB interfaces - integrated circuitsDescription: IC: USB controller; I2C,UART; 3÷5.5VDC; TSSOP14; tube Interface: I2C; UART Operating temperature: -40...85°C Supply voltage: 3...5.5V DC Mounting: SMD Manufacturer standard package: 96pcs. TX/RX buffer size: 64 B/64 B Number of inputs/outputs: 4 Type of integrated circuit: USB controller Data transfer rate: 400kbps Integrated circuit features: interface circuit Kind of package: tube Case: TSSOP14 Number of channels: 1 |
на замовлення 184 шт: термін постачання 14-30 дні (днів) |
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MCP2221-I/SL | MICROCHIP TECHNOLOGY |
Category: USB interfaces - integrated circuitsDescription: IC: USB controller; I2C,UART; 3÷5.5VDC; SO14; tube Interface: I2C; UART Operating temperature: -40...85°C Supply voltage: 3...5.5V DC Mounting: SMD Manufacturer standard package: 57pcs. TX/RX buffer size: 64 B/64 B Number of inputs/outputs: 4 Type of integrated circuit: USB controller Data transfer rate: 400kbps Integrated circuit features: interface circuit Kind of package: tube Case: SO14 Number of channels: 1 |
на замовлення 134 шт: термін постачання 14-30 дні (днів) |
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MCP2221-I/P | MICROCHIP TECHNOLOGY |
Category: USB interfaces - integrated circuitsDescription: IC: USB controller; I2C,UART; 3÷5.5VDC; DIP14; tube Interface: I2C; UART Operating temperature: -40...85°C Supply voltage: 3...5.5V DC Mounting: THT Manufacturer standard package: 30pcs. TX/RX buffer size: 64 B/64 B Number of inputs/outputs: 4 Type of integrated circuit: USB controller Data transfer rate: 400kbps Integrated circuit features: interface circuit Kind of package: tube Case: DIP14 Number of channels: 1 |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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TC4423CPA | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; DIP8; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Output current: 3A Number of channels: 2 Mounting: THT Operating temperature: 0...70°C Operating voltage: 4.5...18V Impulse rise time: 23ns Pulse fall time: 25ns Kind of package: tube Kind of output: inverting Manufacturer standard package: 60pcs. |
на замовлення 53 шт: термін постачання 14-30 дні (днів) |
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TC4423AVOA | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: tube Kind of output: inverting Manufacturer standard package: 100pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TC4423AVPA | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; DIP8; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Output current: 3A Number of channels: 2 Mounting: THT Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: tube Kind of output: inverting Manufacturer standard package: 60pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TC4423COE | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO16; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO16 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: 0...70°C Operating voltage: 4.5...18V Impulse rise time: 23ns Pulse fall time: 25ns Kind of package: tube Kind of output: inverting Manufacturer standard package: 47pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TC4423AVMF713 | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; DFN8; Ch: 2; MOSFET; 4.5÷18V; 4.5A Type of integrated circuit: driver Kind of integrated circuit: low-side Case: DFN8 Number of channels: 2 Mounting: SMD Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: reel; tape Kind of output: inverting Manufacturer standard package: 3300pcs. Maximum output current: 4.5A DC supply current: 1mA Integrated circuit features: MOSFET Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||||||
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TC4423EMF713 | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; DFN8; Ch: 2; MOSFET; 4.5÷18V; 3A Type of integrated circuit: driver Kind of integrated circuit: low-side Case: DFN8 Number of channels: 2 Mounting: SMD Operating voltage: 4.5...18V Impulse rise time: 23ns Pulse fall time: 25ns Kind of package: reel; tape Manufacturer standard package: 3300pcs. Maximum output current: 3A DC supply current: 2.5mA Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||||||
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TC4423EOE713 | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; SOIC16; Ch: 2; MOSFET; 4.5÷18V; 3A; 470mW Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC16 Number of channels: 2 Mounting: SMD Operating voltage: 4.5...18V Impulse rise time: 23ns Pulse fall time: 25ns Kind of package: reel; tape Manufacturer standard package: 1000pcs. Maximum output current: 3A DC supply current: 2.5mA Power dissipation: 0.47W Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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TC4423VMF713 | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; DFN8; Ch: 2; MOSFET; 4.5÷18V; 3A Type of integrated circuit: driver Kind of integrated circuit: low-side Case: DFN8 Number of channels: 2 Mounting: SMD Operating voltage: 4.5...18V Impulse rise time: 23ns Pulse fall time: 25ns Kind of package: reel; tape Manufacturer standard package: 3300pcs. Maximum output current: 3A DC supply current: 2.5mA Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||||||
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TC4423VOE713 | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; SOIC16; Ch: 2; MOSFET; 4.5÷18V; 3A; 470mW Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC16 Number of channels: 2 Mounting: SMD Operating voltage: 4.5...18V Impulse rise time: 23ns Pulse fall time: 25ns Kind of package: reel; tape Manufacturer standard package: 1000pcs. Maximum output current: 3A DC supply current: 2.5mA Power dissipation: 0.47W Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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MIC4423ZWM-TR | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; SOIC16; Ch: 2; MOSFET; 4.5÷18V; 3A Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC16 Number of channels: 2 Mounting: SMD Operating temperature: 0...150°C Operating voltage: 4.5...18V Impulse rise time: 28ns Pulse fall time: 32ns Kind of package: reel; tape Manufacturer standard package: 1000pcs. Maximum output current: 3A Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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TC4423AVMF | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; DFN8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: low-side Case: DFN8 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: tube Kind of output: inverting Manufacturer standard package: 60pcs. Supply voltage: 4.5...18V Maximum output current: 4.5A DC supply current: 1mA Integrated circuit features: MOSFET Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | ||||||||||
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TC4423AVOA713 | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; SOIC8; 3A; Ch: 2; MOSFET; 4.5÷18V; 610mW Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC8 Output current: 3A Number of channels: 2 Mounting: SMD Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: reel; tape Kind of output: inverting Manufacturer standard package: 3300pcs. Maximum output current: 4.5A DC supply current: 1mA Power dissipation: 0.61W Integrated circuit features: MOSFET Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||||||
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TC4423AVOE713 | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; 4.5÷18V; 1.1W Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC16 Output current: 3A Number of channels: 2 Mounting: SMD Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: reel; tape Kind of output: inverting Manufacturer standard package: 1000pcs. Maximum output current: 4.5A DC supply current: 1mA Power dissipation: 1.1W Integrated circuit features: MOSFET Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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TC4423COE713 | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V; 470mW Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC16 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: 0...150°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 25ns Kind of package: reel; tape Kind of output: inverting Manufacturer standard package: 1000pcs. Supply voltage: 4.5...18V Maximum output current: 3A DC supply current: 2.5mA Power dissipation: 0.47W Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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TC4423EMF | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; DFN8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: low-side Case: DFN8 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 25ns Kind of package: tube Kind of output: inverting Manufacturer standard package: 60pcs. Supply voltage: 4.5...18V Maximum output current: 3A DC supply current: 2.5mA Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||
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TC4423EOE | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V; 470mW Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC16 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 25ns Kind of package: tube Kind of output: inverting Manufacturer standard package: 47pcs. Supply voltage: 4.5...18V Maximum output current: 3A DC supply current: 2.5mA Power dissipation: 0.47W Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 235 шт В кошику од. на суму грн. | ||||||||||
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TC4423VMF | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; DFN8; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A Type of integrated circuit: driver Kind of integrated circuit: low-side Case: DFN8 Output current: 3A Number of channels: 2 Mounting: SMD Operating voltage: 4.5...18V Impulse rise time: 23ns Pulse fall time: 25ns Kind of package: tube Kind of output: inverting Manufacturer standard package: 60pcs. Maximum output current: 3A DC supply current: 2.5mA Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||
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TC4423VOE | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC16 Output current: 3A Number of channels: 2 Mounting: SMD Operating voltage: 4.5...18V Impulse rise time: 23ns Pulse fall time: 25ns Kind of package: tube Kind of output: inverting Manufacturer standard package: 47pcs. Maximum output current: 3A DC supply current: 2.5mA Power dissipation: 0.47W Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 282 шт В кошику од. на суму грн. | ||||||||||
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TC4423EPA | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; DIP8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V; 730mW Type of integrated circuit: driver Kind of integrated circuit: low-side Case: DIP8 Output current: 3A Number of channels: 2 Mounting: THT Operating temperature: -40...85°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 25ns Kind of package: tube Kind of output: inverting Manufacturer standard package: 60pcs. Supply voltage: 4.5...18V Maximum output current: 3A Power dissipation: 0.73W Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | ||||||||||
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MIC4423YM-TR | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; SOIC8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC8 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 4.5...18V Impulse rise time: 23ns Pulse fall time: 25ns Kind of package: reel; tape Kind of output: inverting Manufacturer standard package: 2500pcs. Supply voltage: 4.5...18V Maximum output current: 3A Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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MIC4423YWM | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC16 Output current: 3A Number of channels: 2 Mounting: SMD Operating voltage: 4.5...18V Impulse rise time: 28ns Pulse fall time: 32ns Kind of package: tube Manufacturer standard package: 47pcs. Maximum output current: 3A DC supply current: 2mA Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 282 шт В кошику од. на суму грн. | ||||||||||
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MIC4423YWM-TR | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; SOIC8; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC8 Output current: 3A Number of channels: 2 Mounting: SMD Operating voltage: 4.5...18V Impulse rise time: 28ns Pulse fall time: 32ns Kind of package: reel; tape Kind of output: inverting Manufacturer standard package: 1000pcs. Maximum output current: 3A Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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MIC4423ZWM | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC16 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: 0...150°C Operating voltage: 4.5...18V Impulse rise time: 28ns Pulse fall time: 32ns Kind of package: tube Manufacturer standard package: 47pcs. Maximum output current: 3A DC supply current: 2mA Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 282 шт В кошику од. на суму грн. | ||||||||||
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TC4423VPA | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; DIP8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V; 730mW Type of integrated circuit: driver Kind of integrated circuit: low-side Case: DIP8 Output current: 3A Number of channels: 2 Mounting: THT Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 25ns Kind of package: tube Kind of output: inverting Manufacturer standard package: 60pcs. Supply voltage: 4.5...18V Maximum output current: 3A DC supply current: 2.5mA Power dissipation: 0.73W Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 180 шт В кошику од. на суму грн. | ||||||||||
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MIC4423ZN | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; DIP8; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A Type of integrated circuit: driver Kind of integrated circuit: low-side Case: DIP8 Output current: 3A Number of channels: 2 Mounting: THT Operating temperature: -40...85°C Operating voltage: 4.5...18V Impulse rise time: 23ns Pulse fall time: 25ns Kind of package: tube Kind of output: inverting Manufacturer standard package: 50pcs. Maximum output current: 3A DC supply current: 2mA Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||
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MIC4423YN | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side; DIP8; 3A; 25mV; Ch: 2; MOSFET; Uoper: 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: low-side Case: DIP8 Output current: 3A Number of channels: 2 Mounting: THT Operating temperature: -40...85°C Operating voltage: 4.5...18V Impulse rise time: 60ns Pulse fall time: 60ns Kind of package: tube Kind of output: inverting Manufacturer standard package: 50pcs. Output voltage: 25mV Supply voltage: 4.5...18V Maximum output current: 3A DC supply current: 2mA Power dissipation: 0.96W Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
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SMBJ15AE3/TR13 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 3000pcs. Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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MASMBJ15A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | ||||||||||
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MASMBJ15Ae3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | ||||||||||
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MSMBJ15A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 16.7÷18.5V; 24A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 1µA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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MSMBJ15A/TR | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Kind of package: reel; tape Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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MSMBJ15AE3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||
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MSMBJ15AE3/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
| MP6KE12A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 0.6kW; 11.4V; 36A; Ch: 1; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10.2V Breakdown voltage: 11.4V Max. forward impulse current: 36A Mounting: THT Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | |||||||||||
| MP6KE12Ae3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 11.4V; 36A; unidirectional; 0.6kW; Ch: 1; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10.2V Breakdown voltage: 11.4V Max. forward impulse current: 36A Semiconductor structure: unidirectional Mounting: THT Leakage current: 5µA Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | |||||||||||
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ATSAME70N21A-AN | MICROCHIP TECHNOLOGY |
Category: 32-bit ARM familyDescription: IC: ARM microcontroller; LQFP100; 1.62÷3.6VDC; Ext.inter: 75 Type of integrated circuit: ARM microcontroller Clock frequency: 300MHz Interface: CAN-FD x2; Ethernet; I2C x3; JTAG; LIN x2; QSPI; SPI; SPI x4; SSC; SWD; UART x8 Supply voltage: 1.62...3.6V DC Mounting: SMD Case: LQFP100 Number of inputs/outputs: 75 Number of 16bit timers: 6 Kind of architecture: Cortex M7 Number of 32bit timers: 1 Family: ATSAME7 Kind of package: in-tray Memory: 384kB SRAM; 2MB FLASH Operating temperature: -40...105°C Related items: 24AA02E48T-I/OT; 26VF032B-104I/SM; ATECC608A-MAHDA-S; KSZ8081RNACA; KSZ8081RNBIA-TR; LAN8710AI-EZK-ABC; LAN8720A-CP; MCP2551-I/SN; MCP2561-E/SN Manufacturer standard package: 90pcs. Kind of core: 32-bit Number of output compare channels: 17 Operating voltage: 1.8...3.3V DC Number of external interrupts: 75 Integrated circuit features: 32kHz resonator for RTC; ADC gain stage; FPU; internal temperature sensor; MPU; quadrature decoder; RTC; TRNG Number of comparators: 1 Ciphering: AES256; SHA256 Number of 12bit D/A converters: 2 Number of input capture channels: 6 Number of PWM channels: 20 USB speed: Hi-Speed Number of 12bit A/D converters: 10 |
на замовлення 94 шт: термін постачання 14-30 дні (днів) |
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ATSAME70N20A-AN | MICROCHIP TECHNOLOGY |
Category: 32-bit ARM familyDescription: IC: ARM microcontroller; LQFP100; 1.62÷3.6VDC; Ext.inter: 75 Type of integrated circuit: ARM microcontroller Clock frequency: 300MHz Interface: CAN-FD x2; Ethernet; I2C x3; JTAG; LIN x2; QSPI; SPI; SPI x4; SSC; SWD; UART x8 Supply voltage: 1.62...3.6V DC Mounting: SMD Case: LQFP100 Number of inputs/outputs: 75 Number of 16bit timers: 6 Kind of architecture: Cortex M7 Number of 32bit timers: 1 Family: ATSAME7 Kind of package: in-tray Memory: 384kB SRAM; 1MB FLASH Operating temperature: -40...105°C Related items: 24AA02E48T-I/OT; 26VF032B-104I/SM; ATECC608A-MAHDA-S; KSZ8081RNACA; KSZ8081RNBIA-TR; LAN8710AI-EZK-ABC; LAN8720A-CP; MCP2551-I/SN; MCP2561-E/SN Manufacturer standard package: 90pcs. Kind of core: 32-bit Number of output compare channels: 17 Operating voltage: 1.8...3.3V DC Number of external interrupts: 75 Integrated circuit features: 32kHz resonator for RTC; ADC gain stage; FPU; internal temperature sensor; MPU; quadrature decoder; RTC; TRNG Number of comparators: 1 Ciphering: AES256; SHA256 Number of 12bit D/A converters: 2 Number of input capture channels: 6 Number of PWM channels: 20 USB speed: Hi-Speed Number of 12bit A/D converters: 10 |
на замовлення 46 шт: термін постачання 14-30 дні (днів) |
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ATSAME70Q21A-AN | MICROCHIP TECHNOLOGY |
Category: 32-bit ARM familyDescription: IC: ARM microcontroller; LQFP144; 1.62÷3.6VDC; Ext.inter: 114 Type of integrated circuit: ARM microcontroller Clock frequency: 300MHz Interface: CAN-FD x2; Ethernet; I2C x3; I2S; JTAG; LIN x2; QSPI; SPI x5; SSC; SWD; UART x8; USB device; USB Host Supply voltage: 1.62...3.6V DC Mounting: SMD Case: LQFP144 Number of inputs/outputs: 114 Number of 16bit timers: 6 Kind of architecture: Cortex M7 Number of 32bit timers: 1 Family: ATSAME7 Kind of package: in-tray Memory: 384kB SRAM; 2MB FLASH Operating temperature: -40...105°C Related items: 24AA02E48T-I/OT; 26VF032B-104I/SM; ATECC608A-MAHDA-S; KSZ8081RNACA; KSZ8081RNBIA-TR; LAN8710AI-EZK-ABC; LAN8720A-CP; MCP2551-I/SN; MCP2561-E/SN Manufacturer standard package: 60pcs. Kind of core: 32-bit Number of output compare channels: 44 Operating voltage: 1.8...3.3V DC Number of external interrupts: 114 Integrated circuit features: 32kHz resonator for RTC; ADC gain stage; FPU; internal temperature sensor; MPU; quadrature decoder x4; RTC; TRNG Number of comparators: 1 Ciphering: AES256; SHA256 Number of 12bit D/A converters: 2 Number of input capture channels: 24 Number of PWM channels: 20 USB speed: Hi-Speed Number of 12bit A/D converters: 24 |
на замовлення 28 шт: термін постачання 14-30 дні (днів) |
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ATSAME70Q19A-AN | MICROCHIP TECHNOLOGY |
Category: 32-bit ARM familyDescription: IC: ARM microcontroller; LQFP144; 1.62÷3.6VDC; Ext.inter: 114 Type of integrated circuit: ARM microcontroller Clock frequency: 300MHz Interface: CAN-FD x2; Ethernet; I2C x3; I2S; JTAG; LIN x2; QSPI; SPI x5; SSC; SWD; UART x8; USB device; USB Host Supply voltage: 1.62...3.6V DC Mounting: SMD Case: LQFP144 Number of inputs/outputs: 114 Number of 16bit timers: 6 Kind of architecture: Cortex M7 Number of 32bit timers: 1 Family: ATSAME7 Kind of package: in-tray Memory: 256kB SRAM; 512kB FLASH Operating temperature: -40...105°C Related items: 24AA02E48T-I/OT; 26VF032B-104I/SM; ATECC608A-MAHDA-S; KSZ8081RNACA; KSZ8081RNBIA-TR; LAN8710AI-EZK-ABC; LAN8720A-CP; MCP2551-I/SN; MCP2561-E/SN Manufacturer standard package: 60pcs. Kind of core: 32-bit Number of output compare channels: 44 Operating voltage: 1.8...3.3V DC Number of external interrupts: 114 Integrated circuit features: 32kHz resonator for RTC; ADC gain stage; FPU; internal temperature sensor; MPU; quadrature decoder x4; RTC; TRNG Number of comparators: 1 Ciphering: AES256; SHA256 Number of 12bit D/A converters: 2 Number of input capture channels: 24 Number of PWM channels: 20 USB speed: Hi-Speed Number of 12bit A/D converters: 24 |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
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| SMBJ22CAE3/TR13 |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4V; 16.9A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4V; 16.9A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MASMBJ22CA |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4V; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4V; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| MASMBJ22CAe3 |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4V; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4V; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| MSMBJ22CA |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4V; 16.9A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4V; 16.9A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MSMBJ22CA/TR |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4V; 16.9A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4V; 16.9A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 700 шт
В кошику
од. на суму грн.
| MSMBJ22CAE3 |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4V; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4V; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| SMCJ22CAE3/TR13 |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4V; 42.2A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 42.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4V; 42.2A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 42.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MSMCJ22CA |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4V; 42.2A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 42.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4V; 42.2A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 42.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| MASMCJ22CA |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4V; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4V; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| MASMCJ22CAe3 |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4V; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4V; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| MSMCJ22CA/TR |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4V; 42.2A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 42.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4V; 42.2A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 42.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| MSMCJ22CAe3 |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4V; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4V; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| MSMCJ22CAE3/TR |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4V; 42.2A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 42.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4V; 42.2A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4V
Max. forward impulse current: 42.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| MCP2200-I/SO |
Виробник: MICROCHIP TECHNOLOGY
Category: USB interfaces - integrated circuits
Description: IC: USB controller; UART; 256BEEPROM; 3÷5.5VDC; SO20; tube
Interface: UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: SMD
Manufacturer standard package: 38pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 8
Type of integrated circuit: USB controller
Data transfer rate: 1Mbps
Integrated circuit features: interface circuit
Memory: 256B EEPROM
Kind of package: tube
Case: SO20
Number of channels: 1
Category: USB interfaces - integrated circuits
Description: IC: USB controller; UART; 256BEEPROM; 3÷5.5VDC; SO20; tube
Interface: UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: SMD
Manufacturer standard package: 38pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 8
Type of integrated circuit: USB controller
Data transfer rate: 1Mbps
Integrated circuit features: interface circuit
Memory: 256B EEPROM
Kind of package: tube
Case: SO20
Number of channels: 1
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 173.31 грн |
| 16+ | 157.63 грн |
| MCP2200-I/SS |
Виробник: MICROCHIP TECHNOLOGY
Category: USB interfaces - integrated circuits
Description: IC: USB controller; UART; 256BEEPROM; 3÷5.5VDC; SSOP20; tube
Interface: UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: SMD
Manufacturer standard package: 67pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 8
Type of integrated circuit: USB controller
Data transfer rate: 1Mbps
Integrated circuit features: interface circuit
Memory: 256B EEPROM
Kind of package: tube
Case: SSOP20
Number of channels: 1
Category: USB interfaces - integrated circuits
Description: IC: USB controller; UART; 256BEEPROM; 3÷5.5VDC; SSOP20; tube
Interface: UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: SMD
Manufacturer standard package: 67pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 8
Type of integrated circuit: USB controller
Data transfer rate: 1Mbps
Integrated circuit features: interface circuit
Memory: 256B EEPROM
Kind of package: tube
Case: SSOP20
Number of channels: 1
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 176.86 грн |
| 10+ | 158.45 грн |
| MCP2200-I/MQ |
Виробник: MICROCHIP TECHNOLOGY
Category: USB interfaces - integrated circuits
Description: IC: USB controller; UART; 256BEEPROM; 3÷5.5VDC; QFN20; tube
Interface: UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: SMD
Manufacturer standard package: 73pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 8
Type of integrated circuit: USB controller
Data transfer rate: 1Mbps
Integrated circuit features: interface circuit
Memory: 256B EEPROM
Kind of package: tube
Case: QFN20
Number of channels: 1
Category: USB interfaces - integrated circuits
Description: IC: USB controller; UART; 256BEEPROM; 3÷5.5VDC; QFN20; tube
Interface: UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: SMD
Manufacturer standard package: 73pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 8
Type of integrated circuit: USB controller
Data transfer rate: 1Mbps
Integrated circuit features: interface circuit
Memory: 256B EEPROM
Kind of package: tube
Case: QFN20
Number of channels: 1
на замовлення 357 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 167.98 грн |
| 73+ | 155.15 грн |
| MCP2221A-I/SL |
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Виробник: MICROCHIP TECHNOLOGY
Category: USB interfaces - integrated circuits
Description: IC: USB controller; I2C,UART; 3÷5.5VDC; SO14; tube
Interface: I2C; UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: SMD
Manufacturer standard package: 57pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 4
Type of integrated circuit: USB controller
Data transfer rate: 400kbps
Integrated circuit features: interface circuit
Kind of package: tube
Case: SO14
Number of channels: 1
Category: USB interfaces - integrated circuits
Description: IC: USB controller; I2C,UART; 3÷5.5VDC; SO14; tube
Interface: I2C; UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: SMD
Manufacturer standard package: 57pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 4
Type of integrated circuit: USB controller
Data transfer rate: 400kbps
Integrated circuit features: interface circuit
Kind of package: tube
Case: SO14
Number of channels: 1
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 168.87 грн |
| 7+ | 150.20 грн |
| 17+ | 143.60 грн |
| 25+ | 138.65 грн |
| 57+ | 135.35 грн |
| MCP2221A-I/P |
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Виробник: MICROCHIP TECHNOLOGY
Category: USB interfaces - integrated circuits
Description: IC: USB controller; I2C,UART; 3÷5.5VDC; DIP14; tube
Interface: I2C; UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: THT
Manufacturer standard package: 30pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 4
Type of integrated circuit: USB controller
Data transfer rate: 400kbps
Integrated circuit features: interface circuit
Kind of package: tube
Case: DIP14
Number of channels: 1
Category: USB interfaces - integrated circuits
Description: IC: USB controller; I2C,UART; 3÷5.5VDC; DIP14; tube
Interface: I2C; UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: THT
Manufacturer standard package: 30pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 4
Type of integrated circuit: USB controller
Data transfer rate: 400kbps
Integrated circuit features: interface circuit
Kind of package: tube
Case: DIP14
Number of channels: 1
на замовлення 187 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 214.19 грн |
| 5+ | 187.34 грн |
| 30+ | 183.21 грн |
| MCP2221A-I/ST |
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Виробник: MICROCHIP TECHNOLOGY
Category: USB interfaces - integrated circuits
Description: IC: USB controller; I2C,UART; 3÷5.5VDC; TSSOP14; tube
Interface: I2C; UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: SMD
Manufacturer standard package: 96pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 4
Type of integrated circuit: USB controller
Data transfer rate: 400kbps
Integrated circuit features: interface circuit
Kind of package: tube
Case: TSSOP14
Number of channels: 1
Category: USB interfaces - integrated circuits
Description: IC: USB controller; I2C,UART; 3÷5.5VDC; TSSOP14; tube
Interface: I2C; UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: SMD
Manufacturer standard package: 96pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 4
Type of integrated circuit: USB controller
Data transfer rate: 400kbps
Integrated circuit features: interface circuit
Kind of package: tube
Case: TSSOP14
Number of channels: 1
на замовлення 184 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 203.53 грн |
| 25+ | 188.16 грн |
| MCP2221-I/SL |
![]() |
Виробник: MICROCHIP TECHNOLOGY
Category: USB interfaces - integrated circuits
Description: IC: USB controller; I2C,UART; 3÷5.5VDC; SO14; tube
Interface: I2C; UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: SMD
Manufacturer standard package: 57pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 4
Type of integrated circuit: USB controller
Data transfer rate: 400kbps
Integrated circuit features: interface circuit
Kind of package: tube
Case: SO14
Number of channels: 1
Category: USB interfaces - integrated circuits
Description: IC: USB controller; I2C,UART; 3÷5.5VDC; SO14; tube
Interface: I2C; UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: SMD
Manufacturer standard package: 57pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 4
Type of integrated circuit: USB controller
Data transfer rate: 400kbps
Integrated circuit features: interface circuit
Kind of package: tube
Case: SO14
Number of channels: 1
на замовлення 134 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 191.97 грн |
| 15+ | 172.48 грн |
| 25+ | 163.41 грн |
| MCP2221-I/P |
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Виробник: MICROCHIP TECHNOLOGY
Category: USB interfaces - integrated circuits
Description: IC: USB controller; I2C,UART; 3÷5.5VDC; DIP14; tube
Interface: I2C; UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: THT
Manufacturer standard package: 30pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 4
Type of integrated circuit: USB controller
Data transfer rate: 400kbps
Integrated circuit features: interface circuit
Kind of package: tube
Case: DIP14
Number of channels: 1
Category: USB interfaces - integrated circuits
Description: IC: USB controller; I2C,UART; 3÷5.5VDC; DIP14; tube
Interface: I2C; UART
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Mounting: THT
Manufacturer standard package: 30pcs.
TX/RX buffer size: 64 B/64 B
Number of inputs/outputs: 4
Type of integrated circuit: USB controller
Data transfer rate: 400kbps
Integrated circuit features: interface circuit
Kind of package: tube
Case: DIP14
Number of channels: 1
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 320.84 грн |
| TC4423CPA |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: 3A
Number of channels: 2
Mounting: THT
Operating temperature: 0...70°C
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 60pcs.
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: 3A
Number of channels: 2
Mounting: THT
Operating temperature: 0...70°C
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 60pcs.
на замовлення 53 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 255.96 грн |
| 7+ | 146.07 грн |
| 18+ | 138.65 грн |
| TC4423AVOA |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 100pcs.
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 100pcs.
товару немає в наявності
В кошику
од. на суму грн.
| TC4423AVPA |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: 3A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 60pcs.
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: 3A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 60pcs.
товару немає в наявності
В кошику
од. на суму грн.
| TC4423COE |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO16; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO16
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...70°C
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 47pcs.
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO16; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO16
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...70°C
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 47pcs.
товару немає в наявності
В кошику
од. на суму грн.
| TC4423AVMF713 |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DFN8; Ch: 2; MOSFET; 4.5÷18V; 4.5A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DFN8
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: inverting
Manufacturer standard package: 3300pcs.
Maximum output current: 4.5A
DC supply current: 1mA
Integrated circuit features: MOSFET
Application: automotive industry
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DFN8; Ch: 2; MOSFET; 4.5÷18V; 4.5A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DFN8
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: inverting
Manufacturer standard package: 3300pcs.
Maximum output current: 4.5A
DC supply current: 1mA
Integrated circuit features: MOSFET
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3300 шт
В кошику
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| TC4423EMF713 |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DFN8; Ch: 2; MOSFET; 4.5÷18V; 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DFN8
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: reel; tape
Manufacturer standard package: 3300pcs.
Maximum output current: 3A
DC supply current: 2.5mA
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DFN8; Ch: 2; MOSFET; 4.5÷18V; 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DFN8
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: reel; tape
Manufacturer standard package: 3300pcs.
Maximum output current: 3A
DC supply current: 2.5mA
Integrated circuit features: MOSFET
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Мінімальне замовлення: 3300 шт
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| TC4423EOE713 |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; Ch: 2; MOSFET; 4.5÷18V; 3A; 470mW
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Maximum output current: 3A
DC supply current: 2.5mA
Power dissipation: 0.47W
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; Ch: 2; MOSFET; 4.5÷18V; 3A; 470mW
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Maximum output current: 3A
DC supply current: 2.5mA
Power dissipation: 0.47W
Integrated circuit features: MOSFET
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Мінімальне замовлення: 1000 шт
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| TC4423VMF713 |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DFN8; Ch: 2; MOSFET; 4.5÷18V; 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DFN8
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: reel; tape
Manufacturer standard package: 3300pcs.
Maximum output current: 3A
DC supply current: 2.5mA
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DFN8; Ch: 2; MOSFET; 4.5÷18V; 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DFN8
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: reel; tape
Manufacturer standard package: 3300pcs.
Maximum output current: 3A
DC supply current: 2.5mA
Integrated circuit features: MOSFET
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Мінімальне замовлення: 3300 шт
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| TC4423VOE713 |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; Ch: 2; MOSFET; 4.5÷18V; 3A; 470mW
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Maximum output current: 3A
DC supply current: 2.5mA
Power dissipation: 0.47W
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; Ch: 2; MOSFET; 4.5÷18V; 3A; 470mW
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Maximum output current: 3A
DC supply current: 2.5mA
Power dissipation: 0.47W
Integrated circuit features: MOSFET
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Мінімальне замовлення: 1000 шт
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| MIC4423ZWM-TR |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; Ch: 2; MOSFET; 4.5÷18V; 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Number of channels: 2
Mounting: SMD
Operating temperature: 0...150°C
Operating voltage: 4.5...18V
Impulse rise time: 28ns
Pulse fall time: 32ns
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Maximum output current: 3A
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; Ch: 2; MOSFET; 4.5÷18V; 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Number of channels: 2
Mounting: SMD
Operating temperature: 0...150°C
Operating voltage: 4.5...18V
Impulse rise time: 28ns
Pulse fall time: 32ns
Kind of package: reel; tape
Manufacturer standard package: 1000pcs.
Maximum output current: 3A
Integrated circuit features: MOSFET
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Мінімальне замовлення: 1000 шт
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| TC4423AVMF |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DFN8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DFN8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 60pcs.
Supply voltage: 4.5...18V
Maximum output current: 4.5A
DC supply current: 1mA
Integrated circuit features: MOSFET
Application: automotive industry
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DFN8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DFN8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 60pcs.
Supply voltage: 4.5...18V
Maximum output current: 4.5A
DC supply current: 1mA
Integrated circuit features: MOSFET
Application: automotive industry
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Мінімальне замовлення: 240 шт
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| TC4423AVOA713 |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 3A; Ch: 2; MOSFET; 4.5÷18V; 610mW
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: inverting
Manufacturer standard package: 3300pcs.
Maximum output current: 4.5A
DC supply current: 1mA
Power dissipation: 0.61W
Integrated circuit features: MOSFET
Application: automotive industry
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 3A; Ch: 2; MOSFET; 4.5÷18V; 610mW
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: inverting
Manufacturer standard package: 3300pcs.
Maximum output current: 4.5A
DC supply current: 1mA
Power dissipation: 0.61W
Integrated circuit features: MOSFET
Application: automotive industry
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Мінімальне замовлення: 3300 шт
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| TC4423AVOE713 |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; 4.5÷18V; 1.1W
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: inverting
Manufacturer standard package: 1000pcs.
Maximum output current: 4.5A
DC supply current: 1mA
Power dissipation: 1.1W
Integrated circuit features: MOSFET
Application: automotive industry
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; 4.5÷18V; 1.1W
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: inverting
Manufacturer standard package: 1000pcs.
Maximum output current: 4.5A
DC supply current: 1mA
Power dissipation: 1.1W
Integrated circuit features: MOSFET
Application: automotive industry
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Мінімальне замовлення: 1000 шт
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| TC4423COE713 |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V; 470mW
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...150°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 25ns
Kind of package: reel; tape
Kind of output: inverting
Manufacturer standard package: 1000pcs.
Supply voltage: 4.5...18V
Maximum output current: 3A
DC supply current: 2.5mA
Power dissipation: 0.47W
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V; 470mW
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...150°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 25ns
Kind of package: reel; tape
Kind of output: inverting
Manufacturer standard package: 1000pcs.
Supply voltage: 4.5...18V
Maximum output current: 3A
DC supply current: 2.5mA
Power dissipation: 0.47W
Integrated circuit features: MOSFET
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Мінімальне замовлення: 1000 шт
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| TC4423EMF |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DFN8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DFN8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 60pcs.
Supply voltage: 4.5...18V
Maximum output current: 3A
DC supply current: 2.5mA
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DFN8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DFN8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 60pcs.
Supply voltage: 4.5...18V
Maximum output current: 3A
DC supply current: 2.5mA
Integrated circuit features: MOSFET
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Мінімальне замовлення: 360 шт
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| TC4423EOE |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V; 470mW
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 47pcs.
Supply voltage: 4.5...18V
Maximum output current: 3A
DC supply current: 2.5mA
Power dissipation: 0.47W
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V; 470mW
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 47pcs.
Supply voltage: 4.5...18V
Maximum output current: 3A
DC supply current: 2.5mA
Power dissipation: 0.47W
Integrated circuit features: MOSFET
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Мінімальне замовлення: 235 шт
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| TC4423VMF |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DFN8; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DFN8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 60pcs.
Maximum output current: 3A
DC supply current: 2.5mA
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DFN8; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DFN8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 60pcs.
Maximum output current: 3A
DC supply current: 2.5mA
Integrated circuit features: MOSFET
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Мінімальне замовлення: 600 шт
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| TC4423VOE |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 47pcs.
Maximum output current: 3A
DC supply current: 2.5mA
Power dissipation: 0.47W
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 47pcs.
Maximum output current: 3A
DC supply current: 2.5mA
Power dissipation: 0.47W
Integrated circuit features: MOSFET
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Мінімальне замовлення: 282 шт
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| TC4423EPA |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DIP8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V; 730mW
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DIP8
Output current: 3A
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 60pcs.
Supply voltage: 4.5...18V
Maximum output current: 3A
Power dissipation: 0.73W
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DIP8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V; 730mW
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DIP8
Output current: 3A
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 60pcs.
Supply voltage: 4.5...18V
Maximum output current: 3A
Power dissipation: 0.73W
Integrated circuit features: MOSFET
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Мінімальне замовлення: 240 шт
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| MIC4423YM-TR |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: reel; tape
Kind of output: inverting
Manufacturer standard package: 2500pcs.
Supply voltage: 4.5...18V
Maximum output current: 3A
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: reel; tape
Kind of output: inverting
Manufacturer standard package: 2500pcs.
Supply voltage: 4.5...18V
Maximum output current: 3A
Integrated circuit features: MOSFET
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Мінімальне замовлення: 2500 шт
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| MIC4423YWM |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 28ns
Pulse fall time: 32ns
Kind of package: tube
Manufacturer standard package: 47pcs.
Maximum output current: 3A
DC supply current: 2mA
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 28ns
Pulse fall time: 32ns
Kind of package: tube
Manufacturer standard package: 47pcs.
Maximum output current: 3A
DC supply current: 2mA
Integrated circuit features: MOSFET
товару немає в наявності
Мінімальне замовлення: 282 шт
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| MIC4423YWM-TR |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 28ns
Pulse fall time: 32ns
Kind of package: reel; tape
Kind of output: inverting
Manufacturer standard package: 1000pcs.
Maximum output current: 3A
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating voltage: 4.5...18V
Impulse rise time: 28ns
Pulse fall time: 32ns
Kind of package: reel; tape
Kind of output: inverting
Manufacturer standard package: 1000pcs.
Maximum output current: 3A
Integrated circuit features: MOSFET
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Мінімальне замовлення: 1000 шт
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| MIC4423ZWM |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...150°C
Operating voltage: 4.5...18V
Impulse rise time: 28ns
Pulse fall time: 32ns
Kind of package: tube
Manufacturer standard package: 47pcs.
Maximum output current: 3A
DC supply current: 2mA
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC16; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC16
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...150°C
Operating voltage: 4.5...18V
Impulse rise time: 28ns
Pulse fall time: 32ns
Kind of package: tube
Manufacturer standard package: 47pcs.
Maximum output current: 3A
DC supply current: 2mA
Integrated circuit features: MOSFET
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Мінімальне замовлення: 282 шт
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| TC4423VPA |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DIP8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V; 730mW
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DIP8
Output current: 3A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 60pcs.
Supply voltage: 4.5...18V
Maximum output current: 3A
DC supply current: 2.5mA
Power dissipation: 0.73W
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DIP8; 3A; Ch: 2; MOSFET; Uoper: 4.5÷18V; 730mW
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DIP8
Output current: 3A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 60pcs.
Supply voltage: 4.5...18V
Maximum output current: 3A
DC supply current: 2.5mA
Power dissipation: 0.73W
Integrated circuit features: MOSFET
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Мінімальне замовлення: 180 шт
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| MIC4423ZN |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DIP8; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DIP8
Output current: 3A
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 50pcs.
Maximum output current: 3A
DC supply current: 2mA
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DIP8; 3A; Ch: 2; MOSFET; 4.5÷18V; Iout max: 3A
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DIP8
Output current: 3A
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Operating voltage: 4.5...18V
Impulse rise time: 23ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 50pcs.
Maximum output current: 3A
DC supply current: 2mA
Integrated circuit features: MOSFET
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Мінімальне замовлення: 250 шт
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| MIC4423YN |
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Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DIP8; 3A; 25mV; Ch: 2; MOSFET; Uoper: 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DIP8
Output current: 3A
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Operating voltage: 4.5...18V
Impulse rise time: 60ns
Pulse fall time: 60ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 50pcs.
Output voltage: 25mV
Supply voltage: 4.5...18V
Maximum output current: 3A
DC supply current: 2mA
Power dissipation: 0.96W
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; DIP8; 3A; 25mV; Ch: 2; MOSFET; Uoper: 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: DIP8
Output current: 3A
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Operating voltage: 4.5...18V
Impulse rise time: 60ns
Pulse fall time: 60ns
Kind of package: tube
Kind of output: inverting
Manufacturer standard package: 50pcs.
Output voltage: 25mV
Supply voltage: 4.5...18V
Maximum output current: 3A
DC supply current: 2mA
Power dissipation: 0.96W
Integrated circuit features: MOSFET
товару немає в наявності
Мінімальне замовлення: 300 шт
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од. на суму грн.
| SMBJ15AE3/TR13 |
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Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Operating temperature: -65...150°C
Number of channels: 1
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Мінімальне замовлення: 3000 шт
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| MASMBJ15A |
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Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
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од. на суму грн.
| MASMBJ15Ae3 |
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Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
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од. на суму грн.
| MSMBJ15A |
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Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7÷18.5V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 16.7÷18.5V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
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Мінімальне замовлення: 1000 шт
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од. на суму грн.
| MSMBJ15A/TR |
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Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 800 шт
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од. на суму грн.
| MSMBJ15AE3 |
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Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 900 шт
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од. на суму грн.
| MSMBJ15AE3/TR |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 24A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 800 шт
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од. на суму грн.
| MP6KE12A |
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Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 11.4V; 36A; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4V
Max. forward impulse current: 36A
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 11.4V; 36A; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4V
Max. forward impulse current: 36A
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 400 шт
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од. на суму грн.
| MP6KE12Ae3 |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 11.4V; 36A; unidirectional; 0.6kW; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Mounting: THT
Leakage current: 5µA
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 11.4V; 36A; unidirectional; 0.6kW; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Mounting: THT
Leakage current: 5µA
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 400 шт
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од. на суму грн.
| ATSAME70N21A-AN |
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Виробник: MICROCHIP TECHNOLOGY
Category: 32-bit ARM family
Description: IC: ARM microcontroller; LQFP100; 1.62÷3.6VDC; Ext.inter: 75
Type of integrated circuit: ARM microcontroller
Clock frequency: 300MHz
Interface: CAN-FD x2; Ethernet; I2C x3; JTAG; LIN x2; QSPI; SPI; SPI x4; SSC; SWD; UART x8
Supply voltage: 1.62...3.6V DC
Mounting: SMD
Case: LQFP100
Number of inputs/outputs: 75
Number of 16bit timers: 6
Kind of architecture: Cortex M7
Number of 32bit timers: 1
Family: ATSAME7
Kind of package: in-tray
Memory: 384kB SRAM; 2MB FLASH
Operating temperature: -40...105°C
Related items: 24AA02E48T-I/OT; 26VF032B-104I/SM; ATECC608A-MAHDA-S; KSZ8081RNACA; KSZ8081RNBIA-TR; LAN8710AI-EZK-ABC; LAN8720A-CP; MCP2551-I/SN; MCP2561-E/SN
Manufacturer standard package: 90pcs.
Kind of core: 32-bit
Number of output compare channels: 17
Operating voltage: 1.8...3.3V DC
Number of external interrupts: 75
Integrated circuit features: 32kHz resonator for RTC; ADC gain stage; FPU; internal temperature sensor; MPU; quadrature decoder; RTC; TRNG
Number of comparators: 1
Ciphering: AES256; SHA256
Number of 12bit D/A converters: 2
Number of input capture channels: 6
Number of PWM channels: 20
USB speed: Hi-Speed
Number of 12bit A/D converters: 10
Category: 32-bit ARM family
Description: IC: ARM microcontroller; LQFP100; 1.62÷3.6VDC; Ext.inter: 75
Type of integrated circuit: ARM microcontroller
Clock frequency: 300MHz
Interface: CAN-FD x2; Ethernet; I2C x3; JTAG; LIN x2; QSPI; SPI; SPI x4; SSC; SWD; UART x8
Supply voltage: 1.62...3.6V DC
Mounting: SMD
Case: LQFP100
Number of inputs/outputs: 75
Number of 16bit timers: 6
Kind of architecture: Cortex M7
Number of 32bit timers: 1
Family: ATSAME7
Kind of package: in-tray
Memory: 384kB SRAM; 2MB FLASH
Operating temperature: -40...105°C
Related items: 24AA02E48T-I/OT; 26VF032B-104I/SM; ATECC608A-MAHDA-S; KSZ8081RNACA; KSZ8081RNBIA-TR; LAN8710AI-EZK-ABC; LAN8720A-CP; MCP2551-I/SN; MCP2561-E/SN
Manufacturer standard package: 90pcs.
Kind of core: 32-bit
Number of output compare channels: 17
Operating voltage: 1.8...3.3V DC
Number of external interrupts: 75
Integrated circuit features: 32kHz resonator for RTC; ADC gain stage; FPU; internal temperature sensor; MPU; quadrature decoder; RTC; TRNG
Number of comparators: 1
Ciphering: AES256; SHA256
Number of 12bit D/A converters: 2
Number of input capture channels: 6
Number of PWM channels: 20
USB speed: Hi-Speed
Number of 12bit A/D converters: 10
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1107.40 грн |
| 3+ | 1014.27 грн |
| 25+ | 974.66 грн |
| ATSAME70N20A-AN |
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Виробник: MICROCHIP TECHNOLOGY
Category: 32-bit ARM family
Description: IC: ARM microcontroller; LQFP100; 1.62÷3.6VDC; Ext.inter: 75
Type of integrated circuit: ARM microcontroller
Clock frequency: 300MHz
Interface: CAN-FD x2; Ethernet; I2C x3; JTAG; LIN x2; QSPI; SPI; SPI x4; SSC; SWD; UART x8
Supply voltage: 1.62...3.6V DC
Mounting: SMD
Case: LQFP100
Number of inputs/outputs: 75
Number of 16bit timers: 6
Kind of architecture: Cortex M7
Number of 32bit timers: 1
Family: ATSAME7
Kind of package: in-tray
Memory: 384kB SRAM; 1MB FLASH
Operating temperature: -40...105°C
Related items: 24AA02E48T-I/OT; 26VF032B-104I/SM; ATECC608A-MAHDA-S; KSZ8081RNACA; KSZ8081RNBIA-TR; LAN8710AI-EZK-ABC; LAN8720A-CP; MCP2551-I/SN; MCP2561-E/SN
Manufacturer standard package: 90pcs.
Kind of core: 32-bit
Number of output compare channels: 17
Operating voltage: 1.8...3.3V DC
Number of external interrupts: 75
Integrated circuit features: 32kHz resonator for RTC; ADC gain stage; FPU; internal temperature sensor; MPU; quadrature decoder; RTC; TRNG
Number of comparators: 1
Ciphering: AES256; SHA256
Number of 12bit D/A converters: 2
Number of input capture channels: 6
Number of PWM channels: 20
USB speed: Hi-Speed
Number of 12bit A/D converters: 10
Category: 32-bit ARM family
Description: IC: ARM microcontroller; LQFP100; 1.62÷3.6VDC; Ext.inter: 75
Type of integrated circuit: ARM microcontroller
Clock frequency: 300MHz
Interface: CAN-FD x2; Ethernet; I2C x3; JTAG; LIN x2; QSPI; SPI; SPI x4; SSC; SWD; UART x8
Supply voltage: 1.62...3.6V DC
Mounting: SMD
Case: LQFP100
Number of inputs/outputs: 75
Number of 16bit timers: 6
Kind of architecture: Cortex M7
Number of 32bit timers: 1
Family: ATSAME7
Kind of package: in-tray
Memory: 384kB SRAM; 1MB FLASH
Operating temperature: -40...105°C
Related items: 24AA02E48T-I/OT; 26VF032B-104I/SM; ATECC608A-MAHDA-S; KSZ8081RNACA; KSZ8081RNBIA-TR; LAN8710AI-EZK-ABC; LAN8720A-CP; MCP2551-I/SN; MCP2561-E/SN
Manufacturer standard package: 90pcs.
Kind of core: 32-bit
Number of output compare channels: 17
Operating voltage: 1.8...3.3V DC
Number of external interrupts: 75
Integrated circuit features: 32kHz resonator for RTC; ADC gain stage; FPU; internal temperature sensor; MPU; quadrature decoder; RTC; TRNG
Number of comparators: 1
Ciphering: AES256; SHA256
Number of 12bit D/A converters: 2
Number of input capture channels: 6
Number of PWM channels: 20
USB speed: Hi-Speed
Number of 12bit A/D converters: 10
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 945.64 грн |
| 25+ | 873.15 грн |
| ATSAME70Q21A-AN |
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Виробник: MICROCHIP TECHNOLOGY
Category: 32-bit ARM family
Description: IC: ARM microcontroller; LQFP144; 1.62÷3.6VDC; Ext.inter: 114
Type of integrated circuit: ARM microcontroller
Clock frequency: 300MHz
Interface: CAN-FD x2; Ethernet; I2C x3; I2S; JTAG; LIN x2; QSPI; SPI x5; SSC; SWD; UART x8; USB device; USB Host
Supply voltage: 1.62...3.6V DC
Mounting: SMD
Case: LQFP144
Number of inputs/outputs: 114
Number of 16bit timers: 6
Kind of architecture: Cortex M7
Number of 32bit timers: 1
Family: ATSAME7
Kind of package: in-tray
Memory: 384kB SRAM; 2MB FLASH
Operating temperature: -40...105°C
Related items: 24AA02E48T-I/OT; 26VF032B-104I/SM; ATECC608A-MAHDA-S; KSZ8081RNACA; KSZ8081RNBIA-TR; LAN8710AI-EZK-ABC; LAN8720A-CP; MCP2551-I/SN; MCP2561-E/SN
Manufacturer standard package: 60pcs.
Kind of core: 32-bit
Number of output compare channels: 44
Operating voltage: 1.8...3.3V DC
Number of external interrupts: 114
Integrated circuit features: 32kHz resonator for RTC; ADC gain stage; FPU; internal temperature sensor; MPU; quadrature decoder x4; RTC; TRNG
Number of comparators: 1
Ciphering: AES256; SHA256
Number of 12bit D/A converters: 2
Number of input capture channels: 24
Number of PWM channels: 20
USB speed: Hi-Speed
Number of 12bit A/D converters: 24
Category: 32-bit ARM family
Description: IC: ARM microcontroller; LQFP144; 1.62÷3.6VDC; Ext.inter: 114
Type of integrated circuit: ARM microcontroller
Clock frequency: 300MHz
Interface: CAN-FD x2; Ethernet; I2C x3; I2S; JTAG; LIN x2; QSPI; SPI x5; SSC; SWD; UART x8; USB device; USB Host
Supply voltage: 1.62...3.6V DC
Mounting: SMD
Case: LQFP144
Number of inputs/outputs: 114
Number of 16bit timers: 6
Kind of architecture: Cortex M7
Number of 32bit timers: 1
Family: ATSAME7
Kind of package: in-tray
Memory: 384kB SRAM; 2MB FLASH
Operating temperature: -40...105°C
Related items: 24AA02E48T-I/OT; 26VF032B-104I/SM; ATECC608A-MAHDA-S; KSZ8081RNACA; KSZ8081RNBIA-TR; LAN8710AI-EZK-ABC; LAN8720A-CP; MCP2551-I/SN; MCP2561-E/SN
Manufacturer standard package: 60pcs.
Kind of core: 32-bit
Number of output compare channels: 44
Operating voltage: 1.8...3.3V DC
Number of external interrupts: 114
Integrated circuit features: 32kHz resonator for RTC; ADC gain stage; FPU; internal temperature sensor; MPU; quadrature decoder x4; RTC; TRNG
Number of comparators: 1
Ciphering: AES256; SHA256
Number of 12bit D/A converters: 2
Number of input capture channels: 24
Number of PWM channels: 20
USB speed: Hi-Speed
Number of 12bit A/D converters: 24
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1312.70 грн |
| ATSAME70Q19A-AN |
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Виробник: MICROCHIP TECHNOLOGY
Category: 32-bit ARM family
Description: IC: ARM microcontroller; LQFP144; 1.62÷3.6VDC; Ext.inter: 114
Type of integrated circuit: ARM microcontroller
Clock frequency: 300MHz
Interface: CAN-FD x2; Ethernet; I2C x3; I2S; JTAG; LIN x2; QSPI; SPI x5; SSC; SWD; UART x8; USB device; USB Host
Supply voltage: 1.62...3.6V DC
Mounting: SMD
Case: LQFP144
Number of inputs/outputs: 114
Number of 16bit timers: 6
Kind of architecture: Cortex M7
Number of 32bit timers: 1
Family: ATSAME7
Kind of package: in-tray
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...105°C
Related items: 24AA02E48T-I/OT; 26VF032B-104I/SM; ATECC608A-MAHDA-S; KSZ8081RNACA; KSZ8081RNBIA-TR; LAN8710AI-EZK-ABC; LAN8720A-CP; MCP2551-I/SN; MCP2561-E/SN
Manufacturer standard package: 60pcs.
Kind of core: 32-bit
Number of output compare channels: 44
Operating voltage: 1.8...3.3V DC
Number of external interrupts: 114
Integrated circuit features: 32kHz resonator for RTC; ADC gain stage; FPU; internal temperature sensor; MPU; quadrature decoder x4; RTC; TRNG
Number of comparators: 1
Ciphering: AES256; SHA256
Number of 12bit D/A converters: 2
Number of input capture channels: 24
Number of PWM channels: 20
USB speed: Hi-Speed
Number of 12bit A/D converters: 24
Category: 32-bit ARM family
Description: IC: ARM microcontroller; LQFP144; 1.62÷3.6VDC; Ext.inter: 114
Type of integrated circuit: ARM microcontroller
Clock frequency: 300MHz
Interface: CAN-FD x2; Ethernet; I2C x3; I2S; JTAG; LIN x2; QSPI; SPI x5; SSC; SWD; UART x8; USB device; USB Host
Supply voltage: 1.62...3.6V DC
Mounting: SMD
Case: LQFP144
Number of inputs/outputs: 114
Number of 16bit timers: 6
Kind of architecture: Cortex M7
Number of 32bit timers: 1
Family: ATSAME7
Kind of package: in-tray
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...105°C
Related items: 24AA02E48T-I/OT; 26VF032B-104I/SM; ATECC608A-MAHDA-S; KSZ8081RNACA; KSZ8081RNBIA-TR; LAN8710AI-EZK-ABC; LAN8720A-CP; MCP2551-I/SN; MCP2561-E/SN
Manufacturer standard package: 60pcs.
Kind of core: 32-bit
Number of output compare channels: 44
Operating voltage: 1.8...3.3V DC
Number of external interrupts: 114
Integrated circuit features: 32kHz resonator for RTC; ADC gain stage; FPU; internal temperature sensor; MPU; quadrature decoder x4; RTC; TRNG
Number of comparators: 1
Ciphering: AES256; SHA256
Number of 12bit D/A converters: 2
Number of input capture channels: 24
Number of PWM channels: 20
USB speed: Hi-Speed
Number of 12bit A/D converters: 24
на замовлення 55 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 958.09 грн |
| 25+ | 860.77 грн |



























