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UPR30e3/TR13 UPR30e3/TR13 Microchip Technology UPR20-40.pdf Description: DIODE GEN PURP 300V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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UPR5/TR13 UPR5/TR13 Microchip Technology UPR5 10 15.pdf Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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UPR5e3/TR13 UPR5e3/TR13 Microchip Technology UPR5 10 15.pdf Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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UPR60/TR13 UPR60/TR13 Microchip Technology UPR60.pdf Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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UPR60e3/TR13 UPR60e3/TR13 Microchip Technology UPR60.pdf Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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UPS10100/TR13 Microchip Technology Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
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UPS10100e3/TR13 Microchip Technology Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
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UPS120/TR13 UPS120/TR13 Microchip Technology 11387-ups120e3-rev-e-datasheet Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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UPS120E/TR13 UPS120E/TR13 Microchip Technology 11387-ups120e3-rev-e-datasheet Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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UPS120E3/TR13 UPS120E3/TR13 Microchip Technology 11387-ups120e3-rev-e-datasheet Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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UPS120EE3/TR13 UPS120EE3/TR13 Microchip Technology UPS120Ee3.pdf Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 20 V
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UPS140/TR13 UPS140/TR13 Microchip Technology ups140.pdf Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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UPS140E3/TR13 UPS140E3/TR13 Microchip Technology ups140.pdf Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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UPS170/TR13 Microchip Technology Description: DIODE SCHOTTKY 1A 70V POWERMITE
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UPS170e3/TR13 Microchip Technology Description: DIODE SCHOTTKY 1A 70V POWERMITE
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UPS315/TR13 UPS315/TR13 Microchip Technology 11392-ups315-datasheet Description: DIODE SCHOTTKY 15V 3A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 320 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 15 V
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UPS315e3/TR13 UPS315e3/TR13 Microchip Technology 11392-ups315-datasheet Description: DIODE SCHOTTKY 15V 3A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 320 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 15 V
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UPS5100/TR13 UPS5100/TR13 Microchip Technology 11090-sd72a-datasheet Description: DIODE SCHOTTKY 100V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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UPS540/TR13 UPS540/TR13 Microchip Technology UPS540e3.pdf Description: DIODE SCHOTTKY 40V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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UPS560/TR13 UPS560/TR13 Microchip Technology UPS560.pdf Description: DIODE SCHOTTKY 60V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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UPS5817/TR13 UPS5817/TR13 Microchip Technology Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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UPS5817e3/TR13 UPS5817e3/TR13 Microchip Technology UPS5817e3.pdf Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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UPS5819/TR13 UPS5819/TR13 Microchip Technology UPS5817 5819.pdf Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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UPS760/TR13 UPS760/TR13 Microchip Technology Description: DIODE SCHOTTKY 60V 7A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 375pF @ 4V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 7 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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UPT17/TR13 UPT17/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPT17E3/TR13 UPT17E3/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPT17R/TR13 UPT17R/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPT17Re3/TR13 UPT17Re3/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPT8/TR13 UPT8/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPT8e3/TR13 UPT8e3/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPT8R/TR13 UPT8R/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPT8Re3/TR13 UPT8Re3/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB10/TR13 UPTB10/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 10VWM 18VC POWERMITE 1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.33A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB12/TR13 UPTB12/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 12VWM 21.6VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 21.6V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB12e3/TR13 UPTB12e3/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 12VWM 21.6VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 21.6V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB15/TR13 UPTB15/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 15VWM 26VC POWERMITE 1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.77A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB15e3/TR13 UPTB15e3/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 15VWM 26VC POWERMITE 1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.77A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB17/TR13 UPTB17/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB17e3/TR13 UPTB17e3/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB8/TR13 UPTB8/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB8e3/TR13 UPTB8e3/TR13 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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USB50803/TR13 USB50803/TR13 Microchip Technology 10336-usb50803-uo-usb50824-datasheet Description: TVS DIODE 3.3VWM 11VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50803C/TR13 USB50803C/TR13 Microchip Technology 11102-usb50803c-a-uo-usb50824c-a-datasheet Description: TVS DIODE 3.3VWM 11VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50803C-A/TR13 USB50803C-A/TR13 Microchip Technology 11102-usb50803c-a-uo-usb50824c-a-datasheet Description: TVS DIODE 3.3VWM 11VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50803C-Ae3/TR13 USB50803C-Ae3/TR13 Microchip Technology 11102-usb50803c-a-uo-usb50824c-a-datasheet Description: TVS DIODE 3.3VWM 11VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50803CE3/TR13 USB50803CE3/TR13 Microchip Technology 11102-usb50803c-a-uo-usb50824c-a-datasheet Description: TVS DIODE 3.3VWM 11VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50803e3/TR13 USB50803e3/TR13 Microchip Technology 10336-usb50803-uo-usb50824-datasheet Description: TVS DIODE 3.3VWM 11VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50805/TR13 USB50805/TR13 Microchip Technology 10336-usb50803-uo-usb50824-datasheet Description: TVS DIODE 5VWM 13VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50805C/TR13 USB50805C/TR13 Microchip Technology 11102-usb50803c-a-uo-usb50824c-a-datasheet Description: TVS DIODE 5VWM 13VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50805C-A/TR13 USB50805C-A/TR13 Microchip Technology 11102-usb50803c-a-uo-usb50824c-a-datasheet Description: TVS DIODE 5VWM 13VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50805C-AE3/TR13 USB50805C-AE3/TR13 Microchip Technology 11102-usb50803c-a-uo-usb50824c-a-datasheet Description: TVS DIODE 5VWM 13VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50805Ce3/TR13 USB50805Ce3/TR13 Microchip Technology 11102-usb50803c-a-uo-usb50824c-a-datasheet Description: TVS DIODE 5VWM 13VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50805e3/TR13 USB50805e3/TR13 Microchip Technology 10336-usb50803-uo-usb50824-datasheet Description: TVS DIODE 5VWM 13VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50812C/TR13 USB50812C/TR13 Microchip Technology 11102-usb50803c-a-uo-usb50824c-a-datasheet Description: TVS DIODE 12VWM 26VC 8-SO
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USB50812C-A/TR13 USB50812C-A/TR13 Microchip Technology 11102-usb50803c-a-uo-usb50824c-a-datasheet Description: TVS DIODE 12VWM 26VC 8-SO
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USB50812CE3/TR13 USB50812CE3/TR13 Microchip Technology 11102-usb50803c-a-uo-usb50824c-a-datasheet Description: TVS DIODE 12VWM 26VC 8-SO
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USB50815/TR13 USB50815/TR13 Microchip Technology 10336-usb50803-uo-usb50824-datasheet Description: TVS DIODE 15VWM 32VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: 8-SO
Unidirectional Channels: 2
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50815C/TR13 USB50815C/TR13 Microchip Technology 11102-usb50803c-a-uo-usb50824c-a-datasheet Description: TVS DIODE 15VWM 32VC 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50815C-A/TR13 USB50815C-A/TR13 Microchip Technology 11102-usb50803c-a-uo-usb50824c-a-datasheet Description: TVS DIODE 15VWM 32VC 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50815C-Ae3/TR13 USB50815C-Ae3/TR13 Microchip Technology 11102-usb50803c-a-uo-usb50824c-a-datasheet Description: TVS DIODE 15VWM 32VC 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 500W
Power Line Protection: No
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UPR30e3/TR13 UPR20-40.pdf
UPR30e3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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UPR5/TR13 UPR5 10 15.pdf
UPR5/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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UPR5e3/TR13 UPR5 10 15.pdf
UPR5e3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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UPR60/TR13 UPR60.pdf
UPR60/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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UPR60e3/TR13 UPR60.pdf
UPR60e3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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UPS10100/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
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UPS10100e3/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
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UPS120/TR13 11387-ups120e3-rev-e-datasheet
UPS120/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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UPS120E/TR13 11387-ups120e3-rev-e-datasheet
UPS120E/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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UPS120E3/TR13 11387-ups120e3-rev-e-datasheet
UPS120E3/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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UPS120EE3/TR13 UPS120Ee3.pdf
UPS120EE3/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 20 V
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UPS140/TR13 ups140.pdf
UPS140/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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UPS140E3/TR13 ups140.pdf
UPS140E3/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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UPS170/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 1A 70V POWERMITE
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UPS170e3/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 1A 70V POWERMITE
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UPS315/TR13 11392-ups315-datasheet
UPS315/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 15V 3A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 320 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 15 V
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UPS315e3/TR13 11392-ups315-datasheet
UPS315e3/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 15V 3A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 320 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 15 V
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UPS5100/TR13 11090-sd72a-datasheet
UPS5100/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 100V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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UPS540/TR13 UPS540e3.pdf
UPS540/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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UPS560/TR13 UPS560.pdf
UPS560/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 60V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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UPS5817/TR13
UPS5817/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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UPS5817e3/TR13 UPS5817e3.pdf
UPS5817e3/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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UPS5819/TR13 UPS5817 5819.pdf
UPS5819/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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UPS760/TR13
UPS760/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 60V 7A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 375pF @ 4V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 7 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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UPT17/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPT17/TR13
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPT17E3/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPT17E3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPT17R/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPT17R/TR13
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPT17Re3/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPT17Re3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPT8/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPT8/TR13
Виробник: Microchip Technology
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPT8e3/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPT8e3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPT8R/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPT8R/TR13
Виробник: Microchip Technology
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPT8Re3/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPT8Re3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB10/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPTB10/TR13
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 18VC POWERMITE 1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.33A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB12/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPTB12/TR13
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 21.6VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 21.6V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB12e3/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPTB12e3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 21.6VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 21.6V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB15/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPTB15/TR13
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 26VC POWERMITE 1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.77A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB15e3/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPTB15e3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 26VC POWERMITE 1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.77A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB17/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPTB17/TR13
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB17e3/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPTB17e3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB8/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPTB8/TR13
Виробник: Microchip Technology
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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UPTB8e3/TR13 129557-upt-and-uptb-tvs-family-datasheet
UPTB8e3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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USB50803/TR13 10336-usb50803-uo-usb50824-datasheet
USB50803/TR13
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 11VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50803C/TR13 11102-usb50803c-a-uo-usb50824c-a-datasheet
USB50803C/TR13
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 11VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50803C-A/TR13 11102-usb50803c-a-uo-usb50824c-a-datasheet
USB50803C-A/TR13
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 11VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50803C-Ae3/TR13 11102-usb50803c-a-uo-usb50824c-a-datasheet
USB50803C-Ae3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 11VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50803CE3/TR13 11102-usb50803c-a-uo-usb50824c-a-datasheet
USB50803CE3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 11VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50803e3/TR13 10336-usb50803-uo-usb50824-datasheet
USB50803e3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 11VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50805/TR13 10336-usb50803-uo-usb50824-datasheet
USB50805/TR13
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 13VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50805C/TR13 11102-usb50803c-a-uo-usb50824c-a-datasheet
USB50805C/TR13
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 13VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50805C-A/TR13 11102-usb50803c-a-uo-usb50824c-a-datasheet
USB50805C-A/TR13
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 13VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50805C-AE3/TR13 11102-usb50803c-a-uo-usb50824c-a-datasheet
USB50805C-AE3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 13VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50805Ce3/TR13 11102-usb50803c-a-uo-usb50824c-a-datasheet
USB50805Ce3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 13VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50805e3/TR13 10336-usb50803-uo-usb50824-datasheet
USB50805e3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 13VC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50812C/TR13 11102-usb50803c-a-uo-usb50824c-a-datasheet
USB50812C/TR13
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 26VC 8-SO
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USB50812C-A/TR13 11102-usb50803c-a-uo-usb50824c-a-datasheet
USB50812C-A/TR13
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 26VC 8-SO
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USB50812CE3/TR13 11102-usb50803c-a-uo-usb50824c-a-datasheet
USB50812CE3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 26VC 8-SO
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USB50815/TR13 10336-usb50803-uo-usb50824-datasheet
USB50815/TR13
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 32VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: 8-SO
Unidirectional Channels: 2
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50815C/TR13 11102-usb50803c-a-uo-usb50824c-a-datasheet
USB50815C/TR13
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 32VC 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50815C-A/TR13 11102-usb50803c-a-uo-usb50824c-a-datasheet
USB50815C-A/TR13
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 32VC 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 500W
Power Line Protection: No
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USB50815C-Ae3/TR13 11102-usb50803c-a-uo-usb50824c-a-datasheet
USB50815C-Ae3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 32VC 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 500W
Power Line Protection: No
товару немає в наявності
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