Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (336552) > Сторінка 891 з 5610
Фото | Назва | Виробник | Інформація |
Доступність |
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MIC45212-2YMP-T1 | Microchip Technology | Description: DC/DC CONVERTER 0.8-5.5V 77W |
товар відсутній |
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MIC5396-P4YMT-T5 | Microchip Technology | Description: IC REG LDO DUAL 1.8/2.8V 8DFN |
товар відсутній |
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MIC5396-P4YMT-TR | Microchip Technology | Description: IC REG LDO DUAL 1.8/2.8V 8DFN |
товар відсутній |
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MIC5397-GPYMX-TR | Microchip Technology | Description: IC REG LDO DUAL 1.8/3V 8DFN |
товар відсутній |
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MIC5398-P4YMX-T5 | Microchip Technology | Description: IC REG LDO DUAL 1.2/3V 8DFN |
товар відсутній |
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KSZ8895MQXCA | Microchip Technology |
Description: IC ETH SWITCH 5PORT 128QFP COM Packaging: Tray Package / Case: 128-BFQFP Function: Switch Interface: I2C, SPI Operating Temperature: 0°C ~ 70°C Voltage - Supply: 1.8V, 2.5V, 3.3V Current - Supply: 129mA Protocol: Ethernet Standards: 10/100 Base-T/TX Supplier Device Package: 128-PQFP (14x20) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 4409 шт: термін постачання 21-31 дні (днів) |
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KSZ8895MQXIA | Microchip Technology |
Description: IC ETH SWITCH 5PORT 128QFP IND Packaging: Tray Package / Case: 128-BFQFP Function: Switch Interface: I²C, SPI Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V, 2.5V, 3.3V Current - Supply: 129mA Protocol: Ethernet Standards: 10/100 Base-T/TX Supplier Device Package: 128-PQFP (14x20) Part Status: Active |
товар відсутній |
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MIC45205-2YMP-EV | Microchip Technology | Description: EVAL BOARD BUCK REG MIC45205-2 |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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MIC45208-2YMP-EV | Microchip Technology | Description: EVAL BOARD BUCK REG MIC45208-2 |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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MIC45212-1YMP-EV | Microchip Technology | Description: EVAL BOARD BUCK REG MIC45212-1 |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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2N7000-G | Microchip Technology |
Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
на замовлення 3052 шт: термін постачання 21-31 дні (днів) |
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2N7008-G | Microchip Technology |
Description: MOSFET N-CH 60V 230MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
на замовлення 2488 шт: термін постачання 21-31 дні (днів) |
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CL25N3-G | Microchip Technology |
Description: IC LED DRIVER LINEAR 25MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Voltage - Output: 90V Mounting Type: Through Hole Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 125°C (TJ) Applications: LED Lighting Current - Output / Channel: 25mA Topology: Constant Current Supplier Device Package: TO-92-3 Voltage - Supply (Min): 5V Voltage - Supply (Max): 90V Part Status: Active |
на замовлення 1331 шт: термін постачання 21-31 дні (днів) |
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CL2N3-G | Microchip Technology |
Description: IC LED DRIVER LINEAR 20MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Voltage - Output: 90V Mounting Type: Through Hole Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 125°C (TJ) Applications: Signage Current - Output / Channel: 20mA Topology: Constant Current Supplier Device Package: TO-92-3 Voltage - Supply (Min): 5V Voltage - Supply (Max): 90V Part Status: Active |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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CL520N3-G | Microchip Technology |
Description: IC LED DRIVER LINEAR 20MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Voltage - Output: 1V ~ 90V Mounting Type: Through Hole Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 125°C (TJ) Applications: Lighting, Signage Current - Output / Channel: 20mA Supplier Device Package: TO-92-3 Voltage - Supply (Min): 4.75V Voltage - Supply (Max): 90V Part Status: Active |
на замовлення 899 шт: термін постачання 21-31 дні (днів) |
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CL525N3-G | Microchip Technology | Description: IC LED DRIVER LINEAR 25MA TO92-3 |
товар відсутній |
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DN2530N3-G | Microchip Technology |
Description: MOSFET N-CH 300V 175MA TO92 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Supplier Device Package: TO-92 (TO-226) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
на замовлення 16033 шт: термін постачання 21-31 дні (днів) |
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DN2535N3-G | Microchip Technology |
Description: MOSFET N-CH 350V 120MA TO92 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Tc) Supplier Device Package: TO-92 (TO-226) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
на замовлення 1590 шт: термін постачання 21-31 дні (днів) |
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DN2540N3-G | Microchip Technology |
Description: MOSFET N-CH 400V 120MA TO92 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Tc) Supplier Device Package: TO-92 (TO-226) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
на замовлення 1020 шт: термін постачання 21-31 дні (днів) |
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DN3545N3-G | Microchip Technology |
Description: MOSFET N-CH 450V 136MA TO92 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136mA (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Supplier Device Package: TO-92 (TO-226) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 450 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
на замовлення 1322 шт: термін постачання 21-31 дні (днів) |
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HV9921N3-G | Microchip Technology |
Description: IC LED DRV OFFL TRIAC TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 85°C (TA) Applications: Lighting Current - Output / Channel: 20mA Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: TO-92-3 Dimming: Triac Voltage - Supply (Min): 20V Voltage - Supply (Max): 400V Part Status: Active |
на замовлення 1071 шт: термін постачання 21-31 дні (днів) |
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HV9922N3-G | Microchip Technology |
Description: IC LED DRV OFFL TRIAC TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 85°C (TA) Applications: Lighting Current - Output / Channel: 50mA Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: TO-92-3 Dimming: Triac Voltage - Supply (Min): 20V Voltage - Supply (Max): 400V |
товар відсутній |
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HV9923N3-G | Microchip Technology |
Description: IC LED DRV OFFL TRIAC TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 85°C (TA) Applications: Lighting Current - Output / Channel: 30mA Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: TO-92-3 Dimming: Triac Voltage - Supply (Min): 20V Voltage - Supply (Max): 400V Part Status: Active |
на замовлення 553 шт: термін постачання 21-31 дні (днів) |
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LND150N3-G | Microchip Technology |
Description: MOSFET N-CH 500V 30MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V |
на замовлення 7424 шт: термін постачання 21-31 дні (днів) |
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LP0701N3-G | Microchip Technology |
Description: MOSFET P-CH 16.5V 500MA TO92 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TO-92 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 16.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V |
на замовлення 890 шт: термін постачання 21-31 дні (днів) |
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LR12N3-G | Microchip Technology |
Description: IC REG LINEAR POS ADJ 50MA TO92 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Output Type: Adjustable Mounting Type: Through Hole Current - Output: 50mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 100V Number of Regulators: 1 Supplier Device Package: TO-92 Voltage - Output (Max): 88V Voltage - Output (Min/Fixed): 1.2V PSRR: 60dB (120Hz) Protection Features: Over Temperature |
на замовлення 1585 шт: термін постачання 21-31 дні (днів) |
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LR645N3-G | Microchip Technology |
Description: IC REG LINEAR 10V 3MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Output Type: Fixed Mounting Type: Through Hole Current - Output: 3mA Operating Temperature: -55°C ~ 155°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 10V Part Status: Active PSRR: 60dB (120Hz) |
на замовлення 1712 шт: термін постачання 21-31 дні (днів) |
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LR745N3-G | Microchip Technology | Description: IC CTRLR PWM SMPS TO92-3 |
на замовлення 1815 шт: термін постачання 21-31 дні (днів) |
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LR8N3-G | Microchip Technology |
Description: IC REG LIN POS ADJ 10MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Output Type: Adjustable Mounting Type: Through Hole Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: TO-92-3 Voltage - Output (Max): 438V Voltage - Output (Min/Fixed): 1.2V Part Status: Active PSRR: 60dB (120Hz) Protection Features: Over Current, Over Temperature |
на замовлення 5353 шт: термін постачання 21-31 дні (днів) |
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TN0104N3-G | Microchip Technology |
Description: MOSFET N-CH 40V 450MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 500µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V |
на замовлення 1256 шт: термін постачання 21-31 дні (днів) |
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TN0106N3-G | Microchip Technology |
Description: MOSFET N-CH 60V 350MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 500µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
на замовлення 1071 шт: термін постачання 21-31 дні (днів) |
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TN0110N3-G | Microchip Technology |
Description: MOSFET N-CH 100V 350MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 500µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
товар відсутній |
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TN0604N3-G | Microchip Technology |
Description: MOSFET N-CH 40V 700MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Tj) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V |
на замовлення 454 шт: термін постачання 21-31 дні (днів) |
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TN0606N3-G | Microchip Technology |
Description: MOSFET N-CH 60V 500MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
на замовлення 1236 шт: термін постачання 21-31 дні (днів) |
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TN0610N3-G | Microchip Technology |
Description: MOSFET N-CH 100V 500MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
на замовлення 1926 шт: термін постачання 21-31 дні (днів) |
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TN0620N3-G | Microchip Technology |
Description: MOSFET N-CH 200V 250MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
на замовлення 835 шт: термін постачання 21-31 дні (днів) |
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TN0702N3-G | Microchip Technology |
Description: MOSFET N-CH 20V 530MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 530mA (Tj) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 20 V |
на замовлення 2635 шт: термін постачання 21-31 дні (днів) |
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TN2106N3-G | Microchip Technology |
Description: MOSFET N-CH 60V 300MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tj) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V Power Dissipation (Max): 740mW (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
на замовлення 604 шт: термін постачання 21-31 дні (днів) |
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TN2540N3-G | Microchip Technology |
Description: MOSFET N-CH 400V 175MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
товар відсутній |
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TN2640N3-G | Microchip Technology |
Description: MOSFET N-CH 400V 220MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Tj) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2V @ 2mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
на замовлення 583 шт: термін постачання 21-31 дні (днів) |
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TN5325N3-G | Microchip Technology |
Description: MOSFET N-CH 250V 215MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 215mA (Ta) Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V |
на замовлення 1765 шт: термін постачання 21-31 дні (днів) |
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TP0604N3-G | Microchip Technology |
Description: MOSFET P-CH 40V 430MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 430mA (Tj) Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 20 V |
на замовлення 1214 шт: термін постачання 21-31 дні (днів) |
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TP0606N3-G | Microchip Technology |
Description: MOSFET P-CH 60V 320MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Tj) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
на замовлення 1466 шт: термін постачання 21-31 дні (днів) |
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TP0620N3-G | Microchip Technology |
Description: MOSFET P-CH 200V 175MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
на замовлення 1013 шт: термін постачання 21-31 дні (днів) |
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TP2104N3-G | Microchip Technology |
Description: MOSFET P-CH 40V 175MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
на замовлення 1412 шт: термін постачання 21-31 дні (днів) |
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TP2535N3-G | Microchip Technology | Description: MOSFET P-CH 350V 0.086A TO92-3 |
на замовлення 733 шт: термін постачання 21-31 дні (днів) |
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TP2540N3-G | Microchip Technology |
Description: MOSFET P-CH 400V 86MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 86mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
на замовлення 1033 шт: термін постачання 21-31 дні (днів) |
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TP2635N3-G | Microchip Technology |
Description: MOSFET P-CH 350V 180MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Tj) Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
на замовлення 832 шт: термін постачання 21-31 дні (днів) |
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TP2640N3-G | Microchip Technology | Description: MOSFET P-CH 400V 180MA TO92-3 |
товар відсутній |
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VN0104N3-G | Microchip Technology |
Description: MOSFET N-CH 40V 350MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V |
на замовлення 1969 шт: термін постачання 21-31 дні (днів) |
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VN0106N3-G | Microchip Technology |
Description: MOSFET N-CH 60V 350MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V |
на замовлення 6836 шт: термін постачання 21-31 дні (днів) |
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VN0109N3-G | Microchip Technology |
Description: MOSFET N-CH 90V 350MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 90 V Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V |
на замовлення 3705 шт: термін постачання 21-31 дні (днів) |
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VN0300L-G | Microchip Technology |
Description: MOSFET N-CH 30V 640MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 640mA (Tj) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V |
на замовлення 2276 шт: термін постачання 21-31 дні (днів) |
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VN0550N3-G | Microchip Technology | Description: MOSFET N-CH 500V 50MA TO92-3 |
на замовлення 294 шт: термін постачання 21-31 дні (днів) |
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VN0606L-G | Microchip Technology |
Description: MOSFET N-CH 60V 330MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Tj) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
на замовлення 710 шт: термін постачання 21-31 дні (днів) |
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VN0808L-G | Microchip Technology |
Description: MOSFET N-CH 80V 300MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tj) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 80 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
на замовлення 579 шт: термін постачання 21-31 дні (днів) |
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VN10KN3-G | Microchip Technology |
Description: MOSFET N-CH 60V 310MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Tj) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
на замовлення 6680 шт: термін постачання 21-31 дні (днів) |
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VN1206L-G | Microchip Technology |
Description: MOSFET N-CH 120V 230MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 120 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
на замовлення 1031 шт: термін постачання 21-31 дні (днів) |
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VN2106N3-G | Microchip Technology |
Description: MOSFET N-CH 60V 300MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tj) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
на замовлення 6609 шт: термін постачання 21-31 дні (днів) |
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VN2210N2 | Microchip Technology |
Description: MOSFET N-CH 100V 1.7A TO39 Packaging: Bag Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj) Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V Power Dissipation (Max): 360mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 10mA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
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MIC45212-2YMP-T1 |
Виробник: Microchip Technology
Description: DC/DC CONVERTER 0.8-5.5V 77W
Description: DC/DC CONVERTER 0.8-5.5V 77W
товар відсутній
MIC5396-P4YMT-T5 |
Виробник: Microchip Technology
Description: IC REG LDO DUAL 1.8/2.8V 8DFN
Description: IC REG LDO DUAL 1.8/2.8V 8DFN
товар відсутній
MIC5396-P4YMT-TR |
Виробник: Microchip Technology
Description: IC REG LDO DUAL 1.8/2.8V 8DFN
Description: IC REG LDO DUAL 1.8/2.8V 8DFN
товар відсутній
MIC5397-GPYMX-TR |
Виробник: Microchip Technology
Description: IC REG LDO DUAL 1.8/3V 8DFN
Description: IC REG LDO DUAL 1.8/3V 8DFN
товар відсутній
MIC5398-P4YMX-T5 |
Виробник: Microchip Technology
Description: IC REG LDO DUAL 1.2/3V 8DFN
Description: IC REG LDO DUAL 1.2/3V 8DFN
товар відсутній
KSZ8895MQXCA |
Виробник: Microchip Technology
Description: IC ETH SWITCH 5PORT 128QFP COM
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: I2C, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.8V, 2.5V, 3.3V
Current - Supply: 129mA
Protocol: Ethernet
Standards: 10/100 Base-T/TX
Supplier Device Package: 128-PQFP (14x20)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC ETH SWITCH 5PORT 128QFP COM
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: I2C, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.8V, 2.5V, 3.3V
Current - Supply: 129mA
Protocol: Ethernet
Standards: 10/100 Base-T/TX
Supplier Device Package: 128-PQFP (14x20)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4409 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 437.92 грн |
25+ | 350.2 грн |
100+ | 338.98 грн |
KSZ8895MQXIA |
Виробник: Microchip Technology
Description: IC ETH SWITCH 5PORT 128QFP IND
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: I²C, SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 2.5V, 3.3V
Current - Supply: 129mA
Protocol: Ethernet
Standards: 10/100 Base-T/TX
Supplier Device Package: 128-PQFP (14x20)
Part Status: Active
Description: IC ETH SWITCH 5PORT 128QFP IND
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: I²C, SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 2.5V, 3.3V
Current - Supply: 129mA
Protocol: Ethernet
Standards: 10/100 Base-T/TX
Supplier Device Package: 128-PQFP (14x20)
Part Status: Active
товар відсутній
MIC45205-2YMP-EV |
Виробник: Microchip Technology
Description: EVAL BOARD BUCK REG MIC45205-2
Description: EVAL BOARD BUCK REG MIC45205-2
на замовлення 6 шт:
термін постачання 21-31 дні (днів)MIC45208-2YMP-EV |
Виробник: Microchip Technology
Description: EVAL BOARD BUCK REG MIC45208-2
Description: EVAL BOARD BUCK REG MIC45208-2
на замовлення 10 шт:
термін постачання 21-31 дні (днів)MIC45212-1YMP-EV |
Виробник: Microchip Technology
Description: EVAL BOARD BUCK REG MIC45212-1
Description: EVAL BOARD BUCK REG MIC45212-1
на замовлення 9 шт:
термін постачання 21-31 дні (днів)2N7000-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 3052 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 32.7 грн |
25+ | 26.56 грн |
100+ | 23.39 грн |
2N7008-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 230MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 230MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 2488 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 44.08 грн |
25+ | 35.05 грн |
100+ | 32.54 грн |
CL25N3-G |
Виробник: Microchip Technology
Description: IC LED DRIVER LINEAR 25MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 90V
Mounting Type: Through Hole
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 25mA
Topology: Constant Current
Supplier Device Package: TO-92-3
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 90V
Part Status: Active
Description: IC LED DRIVER LINEAR 25MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 90V
Mounting Type: Through Hole
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 25mA
Topology: Constant Current
Supplier Device Package: TO-92-3
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 90V
Part Status: Active
на замовлення 1331 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.83 грн |
25+ | 28.07 грн |
100+ | 24.64 грн |
CL2N3-G |
Виробник: Microchip Technology
Description: IC LED DRIVER LINEAR 20MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 90V
Mounting Type: Through Hole
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Signage
Current - Output / Channel: 20mA
Topology: Constant Current
Supplier Device Package: TO-92-3
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 90V
Part Status: Active
Description: IC LED DRIVER LINEAR 20MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 90V
Mounting Type: Through Hole
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Signage
Current - Output / Channel: 20mA
Topology: Constant Current
Supplier Device Package: TO-92-3
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 90V
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 36.97 грн |
CL520N3-G |
Виробник: Microchip Technology
Description: IC LED DRIVER LINEAR 20MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 1V ~ 90V
Mounting Type: Through Hole
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 20mA
Supplier Device Package: TO-92-3
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 90V
Part Status: Active
Description: IC LED DRIVER LINEAR 20MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 1V ~ 90V
Mounting Type: Through Hole
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 20mA
Supplier Device Package: TO-92-3
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 90V
Part Status: Active
на замовлення 899 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 40.52 грн |
25+ | 33.68 грн |
100+ | 29.81 грн |
CL525N3-G |
Виробник: Microchip Technology
Description: IC LED DRIVER LINEAR 25MA TO92-3
Description: IC LED DRIVER LINEAR 25MA TO92-3
товар відсутній
DN2530N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 300V 175MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 300V 175MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
на замовлення 16033 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 51.9 грн |
25+ | 41.1 грн |
100+ | 37.93 грн |
DN2535N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 350V 120MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 350V 120MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 59.01 грн |
25+ | 48.17 грн |
100+ | 44.42 грн |
DN2540N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 400V 120MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 400V 120MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
на замовлення 1020 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.98 грн |
25+ | 50.58 грн |
100+ | 46.15 грн |
DN3545N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 450V 136MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Description: MOSFET N-CH 450V 136MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
на замовлення 1322 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 59.01 грн |
25+ | 48.03 грн |
100+ | 43.61 грн |
HV9921N3-G |
Виробник: Microchip Technology
Description: IC LED DRV OFFL TRIAC TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 20mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TO-92-3
Dimming: Triac
Voltage - Supply (Min): 20V
Voltage - Supply (Max): 400V
Part Status: Active
Description: IC LED DRV OFFL TRIAC TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 20mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TO-92-3
Dimming: Triac
Voltage - Supply (Min): 20V
Voltage - Supply (Max): 400V
Part Status: Active
на замовлення 1071 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 56.87 грн |
25+ | 45.1 грн |
100+ | 40.08 грн |
HV9922N3-G |
Виробник: Microchip Technology
Description: IC LED DRV OFFL TRIAC TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 50mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TO-92-3
Dimming: Triac
Voltage - Supply (Min): 20V
Voltage - Supply (Max): 400V
Description: IC LED DRV OFFL TRIAC TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 50mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TO-92-3
Dimming: Triac
Voltage - Supply (Min): 20V
Voltage - Supply (Max): 400V
товар відсутній
HV9923N3-G |
Виробник: Microchip Technology
Description: IC LED DRV OFFL TRIAC TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 30mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TO-92-3
Dimming: Triac
Voltage - Supply (Min): 20V
Voltage - Supply (Max): 400V
Part Status: Active
Description: IC LED DRV OFFL TRIAC TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 30mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TO-92-3
Dimming: Triac
Voltage - Supply (Min): 20V
Voltage - Supply (Max): 400V
Part Status: Active
на замовлення 553 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 56.87 грн |
LND150N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
на замовлення 7424 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 39.1 грн |
25+ | 32.86 грн |
100+ | 29.08 грн |
LP0701N3-G |
Виробник: Microchip Technology
Description: MOSFET P-CH 16.5V 500MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 16.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
Description: MOSFET P-CH 16.5V 500MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 16.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
на замовлення 890 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 127.25 грн |
25+ | 102 грн |
100+ | 93.86 грн |
LR12N3-G |
Виробник: Microchip Technology
Description: IC REG LINEAR POS ADJ 50MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 50mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 100V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Max): 88V
Voltage - Output (Min/Fixed): 1.2V
PSRR: 60dB (120Hz)
Protection Features: Over Temperature
Description: IC REG LINEAR POS ADJ 50MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 50mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 100V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Max): 88V
Voltage - Output (Min/Fixed): 1.2V
PSRR: 60dB (120Hz)
Protection Features: Over Temperature
на замовлення 1585 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 102.37 грн |
25+ | 83.11 грн |
100+ | 74.67 грн |
LR645N3-G |
Виробник: Microchip Technology
Description: IC REG LINEAR 10V 3MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 3mA
Operating Temperature: -55°C ~ 155°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 10V
Part Status: Active
PSRR: 60dB (120Hz)
Description: IC REG LINEAR 10V 3MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 3mA
Operating Temperature: -55°C ~ 155°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 10V
Part Status: Active
PSRR: 60dB (120Hz)
на замовлення 1712 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 41.94 грн |
25+ | 34.15 грн |
100+ | 31.61 грн |
LR745N3-G |
Виробник: Microchip Technology
Description: IC CTRLR PWM SMPS TO92-3
Description: IC CTRLR PWM SMPS TO92-3
на замовлення 1815 шт:
термін постачання 21-31 дні (днів)LR8N3-G |
Виробник: Microchip Technology
Description: IC REG LIN POS ADJ 10MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Max): 438V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Active
PSRR: 60dB (120Hz)
Protection Features: Over Current, Over Temperature
Description: IC REG LIN POS ADJ 10MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Max): 438V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Active
PSRR: 60dB (120Hz)
Protection Features: Over Current, Over Temperature
на замовлення 5353 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 51.19 грн |
25+ | 40.72 грн |
100+ | 37.58 грн |
TN0104N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 40V 450MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V
Description: MOSFET N-CH 40V 450MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V
на замовлення 1256 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 78.2 грн |
25+ | 64.16 грн |
100+ | 57.67 грн |
TN0106N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 1071 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 68.96 грн |
25+ | 55.7 грн |
100+ | 50.06 грн |
TN0110N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET N-CH 100V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товар відсутній
TN0604N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 40V 700MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
Description: MOSFET N-CH 40V 700MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
на замовлення 454 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 91 грн |
25+ | 72.7 грн |
100+ | 67.01 грн |
TN0606N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
на замовлення 1236 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.67 грн |
25+ | 56.27 грн |
100+ | 50.57 грн |
TN0610N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 500MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: MOSFET N-CH 100V 500MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
на замовлення 1926 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 83.89 грн |
25+ | 67.01 грн |
100+ | 61.95 грн |
TN0620N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
на замовлення 835 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 105.92 грн |
25+ | 85.11 грн |
100+ | 78.21 грн |
TN0702N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 20V 530MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Tj)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 20 V
Description: MOSFET N-CH 20V 530MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Tj)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 20 V
на замовлення 2635 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 98.82 грн |
25+ | 79.47 грн |
100+ | 71.33 грн |
TN2106N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 604 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 44.08 грн |
25+ | 35.05 грн |
100+ | 32.54 грн |
TN2540N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 400V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Description: MOSFET N-CH 400V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
товар відсутній
TN2640N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 400V 220MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Description: MOSFET N-CH 400V 220MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
на замовлення 583 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 127.96 грн |
25+ | 103.1 грн |
100+ | 92.85 грн |
TN5325N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 250V 215MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Description: MOSFET N-CH 250V 215MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
на замовлення 1765 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 49.05 грн |
25+ | 38.17 грн |
100+ | 35.04 грн |
TP0604N3-G |
Виробник: Microchip Technology
Description: MOSFET P-CH 40V 430MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Tj)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 20 V
Description: MOSFET P-CH 40V 430MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Tj)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 20 V
на замовлення 1214 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 122.99 грн |
25+ | 99.26 грн |
100+ | 90.36 грн |
TP0606N3-G |
Виробник: Microchip Technology
Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
на замовлення 1466 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 72.51 грн |
25+ | 57.53 грн |
100+ | 52.47 грн |
TP0620N3-G |
Виробник: Microchip Technology
Description: MOSFET P-CH 200V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: MOSFET P-CH 200V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
на замовлення 1013 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 123.7 грн |
25+ | 98.22 грн |
100+ | 90.1 грн |
TP2104N3-G |
Виробник: Microchip Technology
Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 1412 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 51.19 грн |
25+ | 40.44 грн |
100+ | 37.3 грн |
TP2535N3-G |
Виробник: Microchip Technology
Description: MOSFET P-CH 350V 0.086A TO92-3
Description: MOSFET P-CH 350V 0.086A TO92-3
на замовлення 733 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 135.78 грн |
25+ | 109.45 грн |
100+ | 98.81 грн |
TP2540N3-G |
Виробник: Microchip Technology
Description: MOSFET P-CH 400V 86MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Description: MOSFET P-CH 400V 86MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 115.17 грн |
25+ | 92.99 грн |
100+ | 84.26 грн |
TP2635N3-G |
Виробник: Microchip Technology
Description: MOSFET P-CH 350V 180MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET P-CH 350V 180MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
на замовлення 832 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 142.18 грн |
25+ | 113.64 грн |
100+ | 103.37 грн |
VN0104N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 40V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Description: MOSFET N-CH 40V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
на замовлення 1969 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 50.47 грн |
25+ | 40.03 грн |
100+ | 36.92 грн |
VN0106N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
на замовлення 6836 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 52.61 грн |
25+ | 43.18 грн |
100+ | 38.17 грн |
VN0109N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 90V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Description: MOSFET N-CH 90V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
на замовлення 3705 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 58.29 грн |
25+ | 47.56 грн |
100+ | 43.18 грн |
VN0300L-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 30V 640MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
Description: MOSFET N-CH 30V 640MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
на замовлення 2276 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 93.13 грн |
25+ | 73.19 грн |
100+ | 68.2 грн |
VN0550N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 50MA TO92-3
Description: MOSFET N-CH 500V 50MA TO92-3
на замовлення 294 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 117.3 грн |
25+ | 94.17 грн |
100+ | 85.15 грн |
VN0606L-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 330MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 330MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 710 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 97.39 грн |
25+ | 78.21 грн |
100+ | 70.7 грн |
VN0808L-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 80V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 80V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 579 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 98.82 грн |
25+ | 79.03 грн |
100+ | 71.43 грн |
VN10KN3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 6680 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 39.1 грн |
25+ | 31.6 грн |
100+ | 29.08 грн |
VN1206L-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 120V 230MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Description: MOSFET N-CH 120V 230MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
на замовлення 1031 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 140.05 грн |
25+ | 112.35 грн |
100+ | 101.73 грн |
VN2106N3-G |
Виробник: Microchip Technology
Description: MOSFET N-CH 60V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 6609 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 32.7 грн |
25+ | 26.56 грн |
100+ | 23.39 грн |
VN2210N2 |
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 1.7A TO39
Packaging: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 100V 1.7A TO39
Packaging: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
на замовлення 137 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1107.59 грн |
25+ | 977.9 грн |
100+ | 885.62 грн |