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MT53E1G32D2FW-046 IT:A TR MT53E1G32D2FW-046 IT:A TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:A MT53E1G32D2FW-046 IT:A Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:B TR MT53E1G32D2FW-046 IT:B TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 AIT:A TR MT53E1G32D2FW-046 AIT:A TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AIT:B TR MT53E1G32D2FW-046 AIT:B TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AIT:A MT53E1G32D2FW-046 AIT:A Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AIT:B MT53E1G32D2FW-046 AIT:B Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 324 шт:
термін постачання 21-31 дні (днів)
1+2998.33 грн
10+2669.23 грн
25+2583.11 грн
50+2363.74 грн
100+2304.22 грн
250+2227.13 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:A TR MT53E1G32D2FW-046 AAT:A TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:A MT53E1G32D2FW-046 AAT:A Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:B TR MT53E1G32D2FW-046 AAT:B TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:A MT53E1G32D2FW-046 AUT:A Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:A TR MT53E1G32D2FW-046 AUT:A TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:B MT53E1G32D2FW-046 AUT:B Micron Technology Inc. MT53E1G32D2FW-046.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
1+5795.30 грн
10+5148.36 грн
25+4979.43 грн
50+4555.06 грн
100+4439.28 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:B TR MT53E1G32D2FW-046 AUT:B TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AIT:C MT53E1G32D2FW-046 AIT:C Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
1+4623.25 грн
10+4109.16 грн
25+3974.92 грн
50+3636.52 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:C TR MT53E1G32D2FW-046 AIT:C TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:C TR MT53E1G32D2FW-046 AAT:C TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:C MT53E1G32D2FW-046 AAT:C Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:C MT53E1G32D2FW-046 AUT:C Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:C TR MT53E1G32D2FW-046 AUT:C TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT29TZZZ8D5JKETS-107 W.95Q TR Micron Technology Inc. Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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MT29TZZZ8D5JKETS-107 W.95Q Micron Technology Inc. Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Bulk
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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MT49H8M36FM-33 TR MT49H8M36FM-33 TR Micron Technology Inc. MT49H32,16,8Mx(x).pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-FBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 8M x 36
DigiKey Programmable: Not Verified
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MT49H16M18FM-33 TR Micron Technology Inc. MT49H32,16,8Mx(x).pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 16M x 18
DigiKey Programmable: Not Verified
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MT49H32M9FM-33 TR MT49H32M9FM-33 TR Micron Technology Inc. MT49H32,16,8Mx(x).pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32M x 9
DigiKey Programmable: Not Verified
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MT49H16M18FM-33:B TR Micron Technology Inc. 288mb_rldram_2_sio.pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 16M x 18
DigiKey Programmable: Not Verified
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MT49H32M9FM-33:B TR Micron Technology Inc. csn04.pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32M x 9
DigiKey Programmable: Not Verified
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MTFC128GAZAQJP-AIT MTFC128GAZAQJP-AIT Micron Technology Inc. Description: IC FLASH 1TBIT MMC 153VFBGA
Packaging: Tray
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MTFC128GAZAQJP-AIT TR MTFC128GAZAQJP-AIT TR Micron Technology Inc. Description: IC FLASH 1TBIT MMC 153VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT58L64L32PT-6 TR Micron Technology Inc. Description: SRAM SYNC QUAD 2M-BIT 64KX32
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT58L64L32FT-10TR MT58L64L32FT-10TR Micron Technology Inc. MICTS01079-1.pdf?t.download=true&u=5oefqw Description: IC SRAM 2MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Standard
Clock Frequency: 66 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 32
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
51+490.68 грн
Мінімальне замовлення: 51
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MTFDDAT240MBD-1AK12AIYY Micron Technology Inc. Description: SSD 240GB MSATA MLC SATAIII 3.3V
Packaging: Bulk
Size / Dimension: 50.80mm x 29.85mm x 4.75mm
Memory Size: 240GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Form Factor: mSATA
Speed - Read: 500MB/s
Speed - Write: 250MB/s
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MTFDDAT240MBD-1AK12ITYY MTFDDAT240MBD-1AK12ITYY Micron Technology Inc. m500it_msata_-industrial.pdf Description: SSD 240GB MSATA MLC SATAIII 3.3V
Packaging: Bulk
Size / Dimension: 50.80mm x 29.85mm x 4.75mm
Memory Size: 240GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Form Factor: mSATA
Speed - Read: 500MB/s
Speed - Write: 250MB/s
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MTFDDAT240MBD-AAK12AIYYES Micron Technology Inc. Description: SSD 240GB MSATA MLC SATAIII 3.3V
Packaging: Bulk
Size / Dimension: 50.80mm x 29.85mm x 4.75mm
Memory Size: 240GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Form Factor: mSATA
Speed - Read: 500MB/s
Speed - Write: 250MB/s
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MTFC32GAZAQHD-AIT TR MTFC32GAZAQHD-AIT TR Micron Technology Inc. mtfc32gazaqhd-ait?login Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MTFC32GAZAQHD-AIT TR MTFC32GAZAQHD-AIT TR Micron Technology Inc. mtfc32gazaqhd-ait?login Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1742 шт:
термін постачання 21-31 дні (днів)
1+1767.11 грн
10+1510.68 грн
25+1440.63 грн
50+1304.21 грн
100+1258.04 грн
250+1199.40 грн
500+1137.80 грн
В кошику  од. на суму  грн.
MTFC64GAZAQHD-IT TR MTFC64GAZAQHD-IT TR Micron Technology Inc. Description: IC FLASH 512GBIT EMMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
на замовлення 1514 шт:
термін постачання 21-31 дні (днів)
1+2806.01 грн
10+2397.13 грн
25+2285.67 грн
50+2069.00 грн
100+1995.60 грн
250+1902.42 грн
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MTFC32GAZAQHD-WT TR MTFC32GAZAQHD-WT TR Micron Technology Inc. mtfc32gazaqhd-wt?login Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC_5.1
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
на замовлення 3737 шт:
термін постачання 21-31 дні (днів)
1+1207.39 грн
10+1077.82 грн
25+1043.95 грн
50+955.77 грн
100+932.10 грн
250+925.96 грн
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MTFC32GAZAQHD-IT TR MTFC32GAZAQHD-IT TR Micron Technology Inc. mtfc32gazaqhd-it?login Description: IC FLASH 256GBIT EMMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
на замовлення 3958 шт:
термін постачання 21-31 дні (днів)
1+1324.10 грн
10+1181.59 грн
25+1144.34 грн
50+1047.64 грн
100+1021.62 грн
250+1018.95 грн
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MTFC32GAZAQHD-AIT MTFC32GAZAQHD-AIT Micron Technology Inc. mtfc32gazaqhd-ait?login Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Tray
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1097 шт:
термін постачання 21-31 дні (днів)
1+1767.11 грн
10+1510.68 грн
25+1440.63 грн
40+1319.39 грн
80+1272.73 грн
230+1204.63 грн
440+1145.42 грн
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MTFC128GAJAEDN-IT TR MTFC128GAJAEDN-IT TR Micron Technology Inc. Description: IC FLASH 1TBIT MMC 169LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 169-LFBGA (14x18)
Memory Interface: MMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MTFC128GAJAEDN-IT MTFC128GAJAEDN-IT Micron Technology Inc. Description: IC FLASH 1TBIT MMC 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 169-LFBGA (14x18)
Memory Interface: MMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MTFC128GAJAEDN-AIT TR MTFC128GAJAEDN-AIT TR Micron Technology Inc. Description: IC FLASH 1TB MMC 169LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 169-LFBGA (14x18)
Memory Interface: MMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MT48LC32M16A2P-75:C TR MT48LC32M16A2P-75:C TR Micron Technology Inc. MT48LCxxMxA2_Rev.R_May2015.pdf Description: IC DRAM 512MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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MT48LC32M16A2P-75:C TR MT48LC32M16A2P-75:C TR Micron Technology Inc. MT48LCxxMxA2_Rev.R_May2015.pdf Description: IC DRAM 512MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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MTFDHAL3T2MCE-1AN1ZABYY Micron Technology Inc. 9100_hhhl_u_2_pcie_ssd.pdf Description: SSD 3.2TB U.2 MOD MLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.50mm x 69.85mm x 15.00mm
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: NVMe
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 12V
Form Factor: U.2 Module
Speed - Read: 3.0GB/s
Speed - Write: 2.0GB/s
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MTFDHAL800MCE-1AN1ZABYY Micron Technology Inc. 9100_hhhl_u_2_pcie_ssd.pdf Description: SSD 800GB U.2 MOD MLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.50mm x 69.85mm x 15.00mm
Memory Size: 800GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: NVMe
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 12V
Form Factor: U.2 Module
Speed - Read: 2.1GB/s
Speed - Write: 650MB/s
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MTFDHAL1T6TCU-1AR1ZABYY Micron Technology Inc. 9200_ssd_product_brief.pdf Description: SSD 1.6TB U.2 MOD TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 1.6TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 2.7GB/s
Speed - Write: 1.95GB/s
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MTFDHAL1T9TCT-1AR1ZABYY Micron Technology Inc. 9200_ssd_product_brief.pdf Description: SSD 1.92TB U.2 TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 1.92TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 2.7GB/s
Speed - Write: 1.95GB/s
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MTFDHAL3T2TCU-1AR1ZABYY Micron Technology Inc. 9200_ssd_product_brief.pdf Description: SSD 3.2TB U.2 MOD TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 3.35GB/s
Speed - Write: 2.4GB/s
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MTFDHAL3T8TCT-1AR1ZABYY Micron Technology Inc. 9200_ssd_product_brief.pdf Description: SSD 3.84TB U.2 TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 3.84TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 3.35GB/s
Speed - Write: 2.4GB/s
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MTFDHAL11TATCW-1AR1ZABYY Micron Technology Inc. 9200_ssd_product_brief.pdf Description: SSD 11TB U.2 MODULE TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 11TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Form Factor: U.2 Module
Speed - Read: 3.35GB/s
Speed - Write: 2.4GB/s
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MTFDHAL6T4TCU-1AR1ZABYY Micron Technology Inc. 9200_ssd_product_brief.pdf Description: SSD 6.4TB U.2 MOD TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 6.4TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 3.35GB/s
Speed - Write: 2.4GB/s
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MTFDHAL7T6TCT-1AR1ZABYY Micron Technology Inc. 9200_ssd_product_brief.pdf Description: SSD 7.68TB U.2 TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 7.68TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 3.35GB/s
Speed - Write: 2.4GB/s
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MTFDHAL8TATCW-1AR1ZABYY Micron Technology Inc. 9200_ssd_product_brief.pdf Description: SSD 8TB U.2 MODULE TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 8TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 3.35GB/s
Speed - Write: 2.4GB/s
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MTFDHAL12T8TDR-1AT1ZABYY Micron Technology Inc. Description: SSD 12.8TB U.2 MODULE TLC NVME
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 12.8TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: U.2 Module
Speed - Read: 3.5TB/s
Speed - Write: 3.5TB/s
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MTFDHAL15T3TDP-1AT1ZABYY Micron Technology Inc. Description: SSD 15.36TB U.2 MODULE TLC NVME
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 15.36TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: U.2 Module
Speed - Read: 3.5GB/s
Speed - Write: 3.5GB/s
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MTFDHAL3T2TDR-1AT1ZABYY Micron Technology Inc. Description: SSD 3.2TB U.2 MODULE TLC NVME
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: U.2 Module
Speed - Read: 3.5GB/s
Speed - Write: 3.1GB/s
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MTFDDAK240TDT-1AW15ABYY Micron Technology Inc. Description: SSD 240GB 2.5" TLC SATA III 5V
Packaging: Tray
Memory Size: 240GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Voltage - Supply: 5V
Form Factor: 2.5"
Speed - Read: 540MB/s
Speed - Write: 375MB/s
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MT29C2G24MAABAHAMD-5 IT MT29C2G24MAABAHAMD-5 IT Micron Technology Inc. Description: IC FLASH RAM 2GBIT PAR 130VFBGA
Packaging: Tray
Package / Case: 130-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit (NAND), 1Gbit (LPDRAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND, Mobile LPDRAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 130-VFBGA (8x9)
Memory Interface: Parallel
Memory Organization: 128M x 16 (NAND), 64M x 16 (LPDRAM)
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:A TR
MT53E1G32D2FW-046 IT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:A
MT53E1G32D2FW-046 IT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:B TR
MT53E1G32D2FW-046 IT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 AIT:A TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AIT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AIT:B TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AIT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AIT:A 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AIT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AIT:B 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AIT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 324 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2998.33 грн
10+2669.23 грн
25+2583.11 грн
50+2363.74 грн
100+2304.22 грн
250+2227.13 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:A TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AAT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:A 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AAT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:B TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AAT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:A 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AUT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:A TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AUT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:B MT53E1G32D2FW-046.pdf
MT53E1G32D2FW-046 AUT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5795.30 грн
10+5148.36 грн
25+4979.43 грн
50+4555.06 грн
100+4439.28 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:B TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AUT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AIT:C
MT53E1G32D2FW-046 AIT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4623.25 грн
10+4109.16 грн
25+3974.92 грн
50+3636.52 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:C TR
MT53E1G32D2FW-046 AIT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:C TR
MT53E1G32D2FW-046 AAT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:C
MT53E1G32D2FW-046 AAT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:C
MT53E1G32D2FW-046 AUT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:C TR
MT53E1G32D2FW-046 AUT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT29TZZZ8D5JKETS-107 W.95Q TR
Виробник: Micron Technology Inc.
Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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MT29TZZZ8D5JKETS-107 W.95Q
Виробник: Micron Technology Inc.
Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Bulk
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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MT49H8M36FM-33 TR MT49H32,16,8Mx(x).pdf
MT49H8M36FM-33 TR
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-FBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 8M x 36
DigiKey Programmable: Not Verified
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MT49H16M18FM-33 TR MT49H32,16,8Mx(x).pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 16M x 18
DigiKey Programmable: Not Verified
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MT49H32M9FM-33 TR MT49H32,16,8Mx(x).pdf
MT49H32M9FM-33 TR
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32M x 9
DigiKey Programmable: Not Verified
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MT49H16M18FM-33:B TR 288mb_rldram_2_sio.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 16M x 18
DigiKey Programmable: Not Verified
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MT49H32M9FM-33:B TR csn04.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32M x 9
DigiKey Programmable: Not Verified
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MTFC128GAZAQJP-AIT
MTFC128GAZAQJP-AIT
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT MMC 153VFBGA
Packaging: Tray
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MTFC128GAZAQJP-AIT TR
MTFC128GAZAQJP-AIT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT MMC 153VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT58L64L32PT-6 TR
Виробник: Micron Technology Inc.
Description: SRAM SYNC QUAD 2M-BIT 64KX32
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT58L64L32FT-10TR MICTS01079-1.pdf?t.download=true&u=5oefqw
MT58L64L32FT-10TR
Виробник: Micron Technology Inc.
Description: IC SRAM 2MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Standard
Clock Frequency: 66 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 32
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
51+490.68 грн
Мінімальне замовлення: 51
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MTFDDAT240MBD-1AK12AIYY
Виробник: Micron Technology Inc.
Description: SSD 240GB MSATA MLC SATAIII 3.3V
Packaging: Bulk
Size / Dimension: 50.80mm x 29.85mm x 4.75mm
Memory Size: 240GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Form Factor: mSATA
Speed - Read: 500MB/s
Speed - Write: 250MB/s
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MTFDDAT240MBD-1AK12ITYY m500it_msata_-industrial.pdf
MTFDDAT240MBD-1AK12ITYY
Виробник: Micron Technology Inc.
Description: SSD 240GB MSATA MLC SATAIII 3.3V
Packaging: Bulk
Size / Dimension: 50.80mm x 29.85mm x 4.75mm
Memory Size: 240GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Form Factor: mSATA
Speed - Read: 500MB/s
Speed - Write: 250MB/s
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MTFDDAT240MBD-AAK12AIYYES
Виробник: Micron Technology Inc.
Description: SSD 240GB MSATA MLC SATAIII 3.3V
Packaging: Bulk
Size / Dimension: 50.80mm x 29.85mm x 4.75mm
Memory Size: 240GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Form Factor: mSATA
Speed - Read: 500MB/s
Speed - Write: 250MB/s
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MTFC32GAZAQHD-AIT TR mtfc32gazaqhd-ait?login
MTFC32GAZAQHD-AIT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MTFC32GAZAQHD-AIT TR mtfc32gazaqhd-ait?login
MTFC32GAZAQHD-AIT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1742 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1767.11 грн
10+1510.68 грн
25+1440.63 грн
50+1304.21 грн
100+1258.04 грн
250+1199.40 грн
500+1137.80 грн
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MTFC64GAZAQHD-IT TR
MTFC64GAZAQHD-IT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 512GBIT EMMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
на замовлення 1514 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2806.01 грн
10+2397.13 грн
25+2285.67 грн
50+2069.00 грн
100+1995.60 грн
250+1902.42 грн
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MTFC32GAZAQHD-WT TR mtfc32gazaqhd-wt?login
MTFC32GAZAQHD-WT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC_5.1
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
на замовлення 3737 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1207.39 грн
10+1077.82 грн
25+1043.95 грн
50+955.77 грн
100+932.10 грн
250+925.96 грн
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MTFC32GAZAQHD-IT TR mtfc32gazaqhd-it?login
MTFC32GAZAQHD-IT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 256GBIT EMMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
на замовлення 3958 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1324.10 грн
10+1181.59 грн
25+1144.34 грн
50+1047.64 грн
100+1021.62 грн
250+1018.95 грн
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MTFC32GAZAQHD-AIT mtfc32gazaqhd-ait?login
MTFC32GAZAQHD-AIT
Виробник: Micron Technology Inc.
Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Tray
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1097 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1767.11 грн
10+1510.68 грн
25+1440.63 грн
40+1319.39 грн
80+1272.73 грн
230+1204.63 грн
440+1145.42 грн
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MTFC128GAJAEDN-IT TR
MTFC128GAJAEDN-IT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT MMC 169LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 169-LFBGA (14x18)
Memory Interface: MMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MTFC128GAJAEDN-IT
MTFC128GAJAEDN-IT
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT MMC 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 169-LFBGA (14x18)
Memory Interface: MMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MTFC128GAJAEDN-AIT TR
MTFC128GAJAEDN-AIT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1TB MMC 169LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 169-LFBGA (14x18)
Memory Interface: MMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MT48LC32M16A2P-75:C TR MT48LCxxMxA2_Rev.R_May2015.pdf
MT48LC32M16A2P-75:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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MT48LC32M16A2P-75:C TR MT48LCxxMxA2_Rev.R_May2015.pdf
MT48LC32M16A2P-75:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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MTFDHAL3T2MCE-1AN1ZABYY 9100_hhhl_u_2_pcie_ssd.pdf
Виробник: Micron Technology Inc.
Description: SSD 3.2TB U.2 MOD MLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.50mm x 69.85mm x 15.00mm
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: NVMe
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 12V
Form Factor: U.2 Module
Speed - Read: 3.0GB/s
Speed - Write: 2.0GB/s
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MTFDHAL800MCE-1AN1ZABYY 9100_hhhl_u_2_pcie_ssd.pdf
Виробник: Micron Technology Inc.
Description: SSD 800GB U.2 MOD MLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.50mm x 69.85mm x 15.00mm
Memory Size: 800GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: NVMe
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 12V
Form Factor: U.2 Module
Speed - Read: 2.1GB/s
Speed - Write: 650MB/s
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MTFDHAL1T6TCU-1AR1ZABYY 9200_ssd_product_brief.pdf
Виробник: Micron Technology Inc.
Description: SSD 1.6TB U.2 MOD TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 1.6TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 2.7GB/s
Speed - Write: 1.95GB/s
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MTFDHAL1T9TCT-1AR1ZABYY 9200_ssd_product_brief.pdf
Виробник: Micron Technology Inc.
Description: SSD 1.92TB U.2 TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 1.92TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 2.7GB/s
Speed - Write: 1.95GB/s
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MTFDHAL3T2TCU-1AR1ZABYY 9200_ssd_product_brief.pdf
Виробник: Micron Technology Inc.
Description: SSD 3.2TB U.2 MOD TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 3.35GB/s
Speed - Write: 2.4GB/s
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MTFDHAL3T8TCT-1AR1ZABYY 9200_ssd_product_brief.pdf
Виробник: Micron Technology Inc.
Description: SSD 3.84TB U.2 TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 3.84TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 3.35GB/s
Speed - Write: 2.4GB/s
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MTFDHAL11TATCW-1AR1ZABYY 9200_ssd_product_brief.pdf
Виробник: Micron Technology Inc.
Description: SSD 11TB U.2 MODULE TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 11TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Form Factor: U.2 Module
Speed - Read: 3.35GB/s
Speed - Write: 2.4GB/s
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MTFDHAL6T4TCU-1AR1ZABYY 9200_ssd_product_brief.pdf
Виробник: Micron Technology Inc.
Description: SSD 6.4TB U.2 MOD TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 6.4TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 3.35GB/s
Speed - Write: 2.4GB/s
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MTFDHAL7T6TCT-1AR1ZABYY 9200_ssd_product_brief.pdf
Виробник: Micron Technology Inc.
Description: SSD 7.68TB U.2 TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 7.68TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 3.35GB/s
Speed - Write: 2.4GB/s
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MTFDHAL8TATCW-1AR1ZABYY 9200_ssd_product_brief.pdf
Виробник: Micron Technology Inc.
Description: SSD 8TB U.2 MODULE TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 8TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 3.35GB/s
Speed - Write: 2.4GB/s
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MTFDHAL12T8TDR-1AT1ZABYY
Виробник: Micron Technology Inc.
Description: SSD 12.8TB U.2 MODULE TLC NVME
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 12.8TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: U.2 Module
Speed - Read: 3.5TB/s
Speed - Write: 3.5TB/s
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MTFDHAL15T3TDP-1AT1ZABYY
Виробник: Micron Technology Inc.
Description: SSD 15.36TB U.2 MODULE TLC NVME
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 15.36TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: U.2 Module
Speed - Read: 3.5GB/s
Speed - Write: 3.5GB/s
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MTFDHAL3T2TDR-1AT1ZABYY
Виробник: Micron Technology Inc.
Description: SSD 3.2TB U.2 MODULE TLC NVME
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: U.2 Module
Speed - Read: 3.5GB/s
Speed - Write: 3.1GB/s
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MTFDDAK240TDT-1AW15ABYY
Виробник: Micron Technology Inc.
Description: SSD 240GB 2.5" TLC SATA III 5V
Packaging: Tray
Memory Size: 240GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Voltage - Supply: 5V
Form Factor: 2.5"
Speed - Read: 540MB/s
Speed - Write: 375MB/s
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MT29C2G24MAABAHAMD-5 IT
MT29C2G24MAABAHAMD-5 IT
Виробник: Micron Technology Inc.
Description: IC FLASH RAM 2GBIT PAR 130VFBGA
Packaging: Tray
Package / Case: 130-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit (NAND), 1Gbit (LPDRAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND, Mobile LPDRAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 130-VFBGA (8x9)
Memory Interface: Parallel
Memory Organization: 128M x 16 (NAND), 64M x 16 (LPDRAM)
DigiKey Programmable: Not Verified
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