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MTFDDAK3T8TCB-1AR16ABYY Micron Technology Inc. MTFDDA(K,V)zzzT_RevC_2016.pdf Description: SSD 3.84TB 2.5" TLC SATAIII-12V
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 7.00mm
Memory Size: 3.84TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 2.47 oz (70.38 g)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Speed - Read: 540MB/s
Speed - Write: 520MB/s
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PC28F128P30BF65B TR PC28F128P30BF65B TR Micron Technology Inc. P30-65nm_SBC.pdf Description: IC FLASH 128MBIT PAR 64EASYBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 52 MHz
Memory Format: FLASH
Supplier Device Package: 64-EasyBGA (10x13)
Write Cycle Time - Word, Page: 65ns
Memory Interface: Parallel
Access Time: 65 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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MT29F1T08EEHBFJ4-R:B MT29F1T08EEHBFJ4-R:B Micron Technology Inc. Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Bulk
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MT29F1T08EEHBFJ4-R:B TR MT29F1T08EEHBFJ4-R:B TR Micron Technology Inc. Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MT29F1T08CUCABK8-6:A TR Micron Technology Inc. Description: IC FLASH 1TBIT PARALLEL 167MHZ
Packaging: Tape & Reel (TR)
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MT29E512G08CMCBBH7-6:B TR Micron Technology Inc. Description: IC FLASH 512GBIT PARALLEL 167MHZ
Packaging: Tape & Reel (TR)
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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MT29F128G08AMCDBL1-6:D TR Micron Technology Inc. Description: IC FLASH 128GBIT PARALLEL 167MHZ
Packaging: Tape & Reel (TR)
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Memory Interface: Parallel
Memory Organization: 16G x 8
DigiKey Programmable: Not Verified
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MT29F2T08CTCCBJ7-6C:C TR MT29F2T08CTCCBJ7-6C:C TR Micron Technology Inc. Description: IC FLASH 2TBIT 167MHZ 152LBGA
Packaging: Tape & Reel (TR)
Package / Case: 152-LBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Supplier Device Package: 152-LBGA (14x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29TZZZ5D6EKFRL-107 W.96R TR Micron Technology Inc. Description: 128MX8/128MX16 MCP PLASTIC 1.8V
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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MT29TZZZ5D6DKFRL-107 W.9A6 Micron Technology Inc. Description: MLC EMMC/LPDDR3 144G
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT29TZZZ5D6DKFRL-107 W.9A6 TR Micron Technology Inc. Description: MLC EMMC/LPDDR3 144G
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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MT29TZZZ5D6EKFRL-107 W.96R Micron Technology Inc. Description: MLC EMMC/LPDDR3 144G
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT29TZZZ5D6JKFRL-107 W.96R Micron Technology Inc. Description: MLC EMMC/LPDDR3 144G
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT29TZZZ5D7DKFRL-107 W.9A7 Micron Technology Inc. Description: EMCP3 272G
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT29TZZZ8D5JKERL-107 W.95E Micron Technology Inc. Description: IC FLASH RAM 64GBIT MMC/LPDRAM
Packaging: Box
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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MT29TZZZ5D7DKFRL-107 W.9A7 TR Micron Technology Inc. Description: EMCP3 272G
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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MT29TZZZ8D5JKERL-107 W.95E TR Micron Technology Inc. Description: IC FLASH RAM 64GBIT MMC 933MHZ
Packaging: Tape & Reel (TR)
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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MT29F2G08ABBFAH4-IT:F TR MT29F2G08ABBFAH4-IT:F TR Micron Technology Inc. Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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MT29F2G08ABBFAH4:F MT29F2G08ABBFAH4:F Micron Technology Inc. Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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MT29F2G08ABBFAH4-IT:F MT29F2G08ABBFAH4-IT:F Micron Technology Inc. Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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M29F160FT55N3E2 M29F160FT55N3E2 Micron Technology Inc. M29F%28200%2C400%2C800%2C160%29F%28T%2CB%29_Rev.C%2C5%2C2018.pdf Description: IC FLASH 16MBIT PAR 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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MT41K256M16TW-107:P TR MT41K256M16TW-107:P TR Micron Technology Inc. MT41K_DDR3L_4Gb_Rev.Q_Dec2017_DS.pdf Description: IC DRAM 4GBIT PAR 96FBGA
Packaging: Cut Tape (CT)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
на замовлення 6870 шт:
термін постачання 21-31 дні (днів)
2+279.94 грн
10+251.36 грн
25+243.91 грн
50+223.60 грн
100+218.31 грн
250+211.33 грн
500+202.73 грн
1000+200.53 грн
Мінімальне замовлення: 2
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MT25TL512HBA8ESF-0AAT Micron Technology Inc. mt25t_qljs_l_512_xba_0.pdf Description: IC FLASH 512MBIT SPI 16SOP2
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP2
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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MT53D512M32D2DS-053 WT:D Micron Technology Inc. Description: LPDDR4 16Gb 512Mb x32 3733 Mbps
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
100+941.31 грн
300+827.63 грн
500+788.22 грн
1000+702.73 грн
Мінімальне замовлення: 100
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MT53D512M32D2DS-053 WT:D TR MT53D512M32D2DS-053 WT:D TR Micron Technology Inc. Description: IC DRAM 16GBIT 1.866GHZ 200WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
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MT53D512M32D2DS-053 WT:D TR MT53D512M32D2DS-053 WT:D TR Micron Technology Inc. Description: IC DRAM 16GBIT 1.866GHZ 200WFBGA
Packaging: Cut Tape (CT)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 WT:B MT53E1G32D2FW-046 WT:B Micron Technology Inc. MT53E512M32D1_MT53E1G32D2_MT53E512M64D2_RevG_May2022.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
на замовлення 1574 шт:
термін постачання 21-31 дні (днів)
1+4073.85 грн
10+3622.89 грн
25+3505.14 грн
50+3206.98 грн
100+3125.82 грн
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MT53E1G32D2FW-046 WT:A MT53E1G32D2FW-046 WT:A Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:B MT53E1G32D2FW-046 IT:B Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
1+2454.78 грн
10+2186.28 грн
25+2116.15 грн
50+1936.64 грн
100+1888.04 грн
250+1825.01 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:B MT53E1G32D2FW-046 AAT:B Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
1+5046.27 грн
10+4484.41 грн
25+4337.66 грн
50+3968.20 грн
100+3867.47 грн
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MT53E1G32D2FW-046 WT:B TR MT53E1G32D2FW-046 WT:B TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 WT:A TR MT53E1G32D2FW-046 WT:A TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:A TR MT53E1G32D2FW-046 IT:A TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:A MT53E1G32D2FW-046 IT:A Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:B TR MT53E1G32D2FW-046 IT:B TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 AIT:A TR MT53E1G32D2FW-046 AIT:A TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:B TR MT53E1G32D2FW-046 AIT:B TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:A MT53E1G32D2FW-046 AIT:A Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:B MT53E1G32D2FW-046 AIT:B Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 324 шт:
термін постачання 21-31 дні (днів)
1+2986.01 грн
10+2658.27 грн
25+2572.49 грн
50+2354.03 грн
100+2294.75 грн
250+2217.98 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:A TR MT53E1G32D2FW-046 AAT:A TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:A MT53E1G32D2FW-046 AAT:A Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:B TR MT53E1G32D2FW-046 AAT:B TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:A MT53E1G32D2FW-046 AUT:A Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:A TR MT53E1G32D2FW-046 AUT:A TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:B MT53E1G32D2FW-046 AUT:B Micron Technology Inc. MT53E1G32D2FW-046.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
1+5771.49 грн
10+5127.20 грн
25+4958.97 грн
50+4536.35 грн
100+4421.04 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:B TR MT53E1G32D2FW-046 AUT:B TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:C MT53E1G32D2FW-046 AIT:C Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
1+4604.26 грн
10+4092.27 грн
25+3958.59 грн
50+3621.57 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:C TR MT53E1G32D2FW-046 AIT:C TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:C TR MT53E1G32D2FW-046 AAT:C TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:C MT53E1G32D2FW-046 AAT:C Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:C MT53E1G32D2FW-046 AUT:C Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:C TR MT53E1G32D2FW-046 AUT:C TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT29TZZZ8D5JKETS-107 W.95Q TR Micron Technology Inc. Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29TZZZ8D5JKETS-107 W.95Q Micron Technology Inc. Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Bulk
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT49H8M36FM-33 TR MT49H8M36FM-33 TR Micron Technology Inc. MT49H32,16,8Mx(x).pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-FBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 8M x 36
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT49H16M18FM-33 TR Micron Technology Inc. MT49H32,16,8Mx(x).pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 16M x 18
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT49H32M9FM-33 TR MT49H32M9FM-33 TR Micron Technology Inc. MT49H32,16,8Mx(x).pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32M x 9
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT49H16M18FM-33:B TR Micron Technology Inc. 288mb_rldram_2_sio.pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 16M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT49H32M9FM-33:B TR Micron Technology Inc. csn04.pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32M x 9
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MTFC128GAZAQJP-AIT MTFC128GAZAQJP-AIT Micron Technology Inc. Description: IC FLASH 1TBIT MMC 153VFBGA
Packaging: Tray
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Grade: Automotive
Memory Interface: eMMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MTFDDAK3T8TCB-1AR16ABYY MTFDDA(K,V)zzzT_RevC_2016.pdf
Виробник: Micron Technology Inc.
Description: SSD 3.84TB 2.5" TLC SATAIII-12V
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 7.00mm
Memory Size: 3.84TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 2.47 oz (70.38 g)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Speed - Read: 540MB/s
Speed - Write: 520MB/s
товару немає в наявності
В кошику  од. на суму  грн.
PC28F128P30BF65B TR P30-65nm_SBC.pdf
PC28F128P30BF65B TR
Виробник: Micron Technology Inc.
Description: IC FLASH 128MBIT PAR 64EASYBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 52 MHz
Memory Format: FLASH
Supplier Device Package: 64-EasyBGA (10x13)
Write Cycle Time - Word, Page: 65ns
Memory Interface: Parallel
Access Time: 65 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F1T08EEHBFJ4-R:B
MT29F1T08EEHBFJ4-R:B
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Bulk
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F1T08EEHBFJ4-R:B TR
MT29F1T08EEHBFJ4-R:B TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F1T08CUCABK8-6:A TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT PARALLEL 167MHZ
Packaging: Tape & Reel (TR)
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MT29E512G08CMCBBH7-6:B TR
Виробник: Micron Technology Inc.
Description: IC FLASH 512GBIT PARALLEL 167MHZ
Packaging: Tape & Reel (TR)
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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MT29F128G08AMCDBL1-6:D TR
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT PARALLEL 167MHZ
Packaging: Tape & Reel (TR)
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Memory Interface: Parallel
Memory Organization: 16G x 8
DigiKey Programmable: Not Verified
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MT29F2T08CTCCBJ7-6C:C TR
MT29F2T08CTCCBJ7-6C:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT 167MHZ 152LBGA
Packaging: Tape & Reel (TR)
Package / Case: 152-LBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Supplier Device Package: 152-LBGA (14x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29TZZZ5D6EKFRL-107 W.96R TR
Виробник: Micron Technology Inc.
Description: 128MX8/128MX16 MCP PLASTIC 1.8V
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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MT29TZZZ5D6DKFRL-107 W.9A6
Виробник: Micron Technology Inc.
Description: MLC EMMC/LPDDR3 144G
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT29TZZZ5D6DKFRL-107 W.9A6 TR
Виробник: Micron Technology Inc.
Description: MLC EMMC/LPDDR3 144G
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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MT29TZZZ5D6EKFRL-107 W.96R
Виробник: Micron Technology Inc.
Description: MLC EMMC/LPDDR3 144G
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT29TZZZ5D6JKFRL-107 W.96R
Виробник: Micron Technology Inc.
Description: MLC EMMC/LPDDR3 144G
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT29TZZZ5D7DKFRL-107 W.9A7
Виробник: Micron Technology Inc.
Description: EMCP3 272G
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT29TZZZ8D5JKERL-107 W.95E
Виробник: Micron Technology Inc.
Description: IC FLASH RAM 64GBIT MMC/LPDRAM
Packaging: Box
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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MT29TZZZ5D7DKFRL-107 W.9A7 TR
Виробник: Micron Technology Inc.
Description: EMCP3 272G
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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MT29TZZZ8D5JKERL-107 W.95E TR
Виробник: Micron Technology Inc.
Description: IC FLASH RAM 64GBIT MMC 933MHZ
Packaging: Tape & Reel (TR)
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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MT29F2G08ABBFAH4-IT:F TR
MT29F2G08ABBFAH4-IT:F TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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MT29F2G08ABBFAH4:F
MT29F2G08ABBFAH4:F
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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MT29F2G08ABBFAH4-IT:F
MT29F2G08ABBFAH4-IT:F
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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M29F160FT55N3E2 M29F%28200%2C400%2C800%2C160%29F%28T%2CB%29_Rev.C%2C5%2C2018.pdf
M29F160FT55N3E2
Виробник: Micron Technology Inc.
Description: IC FLASH 16MBIT PAR 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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MT41K256M16TW-107:P TR MT41K_DDR3L_4Gb_Rev.Q_Dec2017_DS.pdf
MT41K256M16TW-107:P TR
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 96FBGA
Packaging: Cut Tape (CT)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
на замовлення 6870 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+279.94 грн
10+251.36 грн
25+243.91 грн
50+223.60 грн
100+218.31 грн
250+211.33 грн
500+202.73 грн
1000+200.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MT25TL512HBA8ESF-0AAT mt25t_qljs_l_512_xba_0.pdf
Виробник: Micron Technology Inc.
Description: IC FLASH 512MBIT SPI 16SOP2
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP2
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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MT53D512M32D2DS-053 WT:D
Виробник: Micron Technology Inc.
Description: LPDDR4 16Gb 512Mb x32 3733 Mbps
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+941.31 грн
300+827.63 грн
500+788.22 грн
1000+702.73 грн
Мінімальне замовлення: 100
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MT53D512M32D2DS-053 WT:D TR
MT53D512M32D2DS-053 WT:D TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT 1.866GHZ 200WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
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MT53D512M32D2DS-053 WT:D TR
MT53D512M32D2DS-053 WT:D TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT 1.866GHZ 200WFBGA
Packaging: Cut Tape (CT)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 WT:B MT53E512M32D1_MT53E1G32D2_MT53E512M64D2_RevG_May2022.pdf
MT53E1G32D2FW-046 WT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
на замовлення 1574 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4073.85 грн
10+3622.89 грн
25+3505.14 грн
50+3206.98 грн
100+3125.82 грн
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MT53E1G32D2FW-046 WT:A
MT53E1G32D2FW-046 WT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:B
MT53E1G32D2FW-046 IT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2454.78 грн
10+2186.28 грн
25+2116.15 грн
50+1936.64 грн
100+1888.04 грн
250+1825.01 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:B 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AAT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5046.27 грн
10+4484.41 грн
25+4337.66 грн
50+3968.20 грн
100+3867.47 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 WT:B TR
MT53E1G32D2FW-046 WT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 WT:A TR
MT53E1G32D2FW-046 WT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:A TR
MT53E1G32D2FW-046 IT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:A
MT53E1G32D2FW-046 IT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:B TR
MT53E1G32D2FW-046 IT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 AIT:A TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AIT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:B TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AIT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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MT53E1G32D2FW-046 AIT:A 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AIT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AIT:B 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AIT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 324 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2986.01 грн
10+2658.27 грн
25+2572.49 грн
50+2354.03 грн
100+2294.75 грн
250+2217.98 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:A TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AAT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:A 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AAT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:B TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AAT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:A 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AUT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:A TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AUT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:B MT53E1G32D2FW-046.pdf
MT53E1G32D2FW-046 AUT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5771.49 грн
10+5127.20 грн
25+4958.97 грн
50+4536.35 грн
100+4421.04 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:B TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AUT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AIT:C
MT53E1G32D2FW-046 AIT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4604.26 грн
10+4092.27 грн
25+3958.59 грн
50+3621.57 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:C TR
MT53E1G32D2FW-046 AIT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:C TR
MT53E1G32D2FW-046 AAT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:C
MT53E1G32D2FW-046 AAT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:C
MT53E1G32D2FW-046 AUT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:C TR
MT53E1G32D2FW-046 AUT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
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MT29TZZZ8D5JKETS-107 W.95Q TR
Виробник: Micron Technology Inc.
Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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MT29TZZZ8D5JKETS-107 W.95Q
Виробник: Micron Technology Inc.
Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Bulk
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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MT49H8M36FM-33 TR MT49H32,16,8Mx(x).pdf
MT49H8M36FM-33 TR
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-FBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 8M x 36
DigiKey Programmable: Not Verified
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MT49H16M18FM-33 TR MT49H32,16,8Mx(x).pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 16M x 18
DigiKey Programmable: Not Verified
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MT49H32M9FM-33 TR MT49H32,16,8Mx(x).pdf
MT49H32M9FM-33 TR
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32M x 9
DigiKey Programmable: Not Verified
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MT49H16M18FM-33:B TR 288mb_rldram_2_sio.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 16M x 18
DigiKey Programmable: Not Verified
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MT49H32M9FM-33:B TR csn04.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32M x 9
DigiKey Programmable: Not Verified
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MTFC128GAZAQJP-AIT
MTFC128GAZAQJP-AIT
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT MMC 153VFBGA
Packaging: Tray
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Grade: Automotive
Memory Interface: eMMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
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