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MT41K256M16TW-107:P TR MT41K256M16TW-107:P TR Micron Technology Inc. MT41K_DDR3L_4Gb_Rev.Q_Dec2017_DS.pdf Description: IC DRAM 4GBIT PAR 96FBGA
Packaging: Cut Tape (CT)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
на замовлення 4678 шт:
термін постачання 21-31 дні (днів)
1+408.13 грн
10+366.17 грн
25+355.11 грн
50+325.39 грн
100+317.58 грн
250+307.34 грн
500+295.93 грн
В кошику  од. на суму  грн.
MT25TL512HBA8ESF-0AAT Micron Technology Inc. mt25t_qljs_l_512_xba_0.pdf Description: IC FLASH 512MBIT SPI 16SOP2
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP2
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT53D512M32D2DS-053 WT:D Micron Technology Inc. Description: LPDDR4 16Gb 512Mb x32 3733 Mbps
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
100+965.75 грн
300+849.11 грн
500+808.68 грн
1000+720.97 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
MT53D512M32D2DS-053 WT:D TR MT53D512M32D2DS-053 WT:D TR Micron Technology Inc. Description: IC DRAM 16GBIT 1.866GHZ 200WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT53D512M32D2DS-053 WT:D TR MT53D512M32D2DS-053 WT:D TR Micron Technology Inc. Description: IC DRAM 16GBIT 1.866GHZ 200WFBGA
Packaging: Cut Tape (CT)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 WT:B MT53E1G32D2FW-046 WT:B Micron Technology Inc. MT53E512M32D1_MT53E1G32D2_MT53E512M64D2_RevG_May2022.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
на замовлення 1574 шт:
термін постачання 21-31 дні (днів)
1+4179.58 грн
10+3716.92 грн
25+3596.12 грн
50+3290.22 грн
100+3206.95 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 WT:A MT53E1G32D2FW-046 WT:A Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 IT:B MT53E1G32D2FW-046 IT:B Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
1+2518.50 грн
10+2243.03 грн
25+2171.07 грн
50+1986.91 грн
100+1937.04 грн
250+1872.37 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:B MT53E1G32D2FW-046 AAT:B Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1492 шт:
термін постачання 21-31 дні (днів)
1+7058.35 грн
10+6266.68 грн
25+6060.35 грн
50+5543.55 грн
100+5402.42 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 WT:B TR MT53E1G32D2FW-046 WT:B TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 WT:A TR MT53E1G32D2FW-046 WT:A TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 IT:A TR MT53E1G32D2FW-046 IT:A TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT53E1G32D2FW-046 IT:A MT53E1G32D2FW-046 IT:A Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 IT:B TR MT53E1G32D2FW-046 IT:B TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:A TR MT53E1G32D2FW-046 AIT:A TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:B TR MT53E1G32D2FW-046 AIT:B TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:A MT53E1G32D2FW-046 AIT:A Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:B MT53E1G32D2FW-046 AIT:B Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1278 шт:
термін постачання 21-31 дні (днів)
1+6439.43 грн
10+5719.20 грн
25+5531.28 грн
50+5059.76 грн
100+4931.06 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:A TR MT53E1G32D2FW-046 AAT:A TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:A MT53E1G32D2FW-046 AAT:A Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:B TR MT53E1G32D2FW-046 AAT:B TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:A MT53E1G32D2FW-046 AUT:A Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:A TR MT53E1G32D2FW-046 AUT:A TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:B MT53E1G32D2FW-046 AUT:B Micron Technology Inc. MT53E1G32D2FW-046.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1345 шт:
термін постачання 21-31 дні (днів)
1+8072.80 грн
10+7165.60 грн
25+6929.06 грн
50+6337.90 грн
100+6176.38 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:B TR MT53E1G32D2FW-046 AUT:B TR Micron Technology Inc. 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:C MT53E1G32D2FW-046 AIT:C Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Qualification: AEC-Q100
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
1+4723.76 грн
10+4198.49 грн
25+4061.33 грн
50+3715.57 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:C TR MT53E1G32D2FW-046 AIT:C TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:C TR MT53E1G32D2FW-046 AAT:C TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Qualification: AEC-Q100
товару немає в наявності
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MT53E1G32D2FW-046 AAT:C MT53E1G32D2FW-046 AAT:C Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Qualification: AEC-Q100
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В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:C MT53E1G32D2FW-046 AUT:C Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:C TR MT53E1G32D2FW-046 AUT:C TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Qualification: AEC-Q100
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В кошику  од. на суму  грн.
MT29TZZZ8D5JKETS-107 W.95Q TR Micron Technology Inc. Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29TZZZ8D5JKETS-107 W.95Q Micron Technology Inc. Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Bulk
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT49H8M36FM-33 TR MT49H8M36FM-33 TR Micron Technology Inc. MT49H32,16,8Mx(x).pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-FBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 8M x 36
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT49H16M18FM-33 TR Micron Technology Inc. MT49H32,16,8Mx(x).pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 16M x 18
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT49H32M9FM-33 TR MT49H32M9FM-33 TR Micron Technology Inc. MT49H32,16,8Mx(x).pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32M x 9
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT49H16M18FM-33:B TR Micron Technology Inc. 288mb_rldram_2_sio.pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 16M x 18
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT49H32M9FM-33:B TR Micron Technology Inc. csn04.pdf Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32M x 9
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MTFC128GAZAQJP-AIT MTFC128GAZAQJP-AIT Micron Technology Inc. Description: IC FLASH 1TBIT MMC 153VFBGA
Packaging: Tray
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Grade: Automotive
Memory Interface: eMMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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В кошику  од. на суму  грн.
MTFC128GAZAQJP-AIT TR MTFC128GAZAQJP-AIT TR Micron Technology Inc. Description: IC FLASH 1TBIT MMC 153VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Grade: Automotive
Memory Interface: eMMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT58L64L32PT-6 TR Micron Technology Inc. Description: SRAM SYNC QUAD 2M-BIT 64KX32
Packaging: Bulk
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT58L64L32FT-10TR MT58L64L32FT-10TR Micron Technology Inc. MICTS01079-1.pdf?t.download=true&u=5oefqw Description: IC SRAM 2MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Standard
Clock Frequency: 66 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 32
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
51+501.35 грн
Мінімальне замовлення: 51
В кошику  од. на суму  грн.
MTFDDAT240MBD-1AK12AIYY Micron Technology Inc. Description: SSD 240GB MSATA MLC SATAIII 3.3V
Packaging: Bulk
Size / Dimension: 50.80mm x 29.85mm x 4.75mm
Memory Size: 240GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Form Factor: mSATA
Speed - Read: 500MB/s
Speed - Write: 250MB/s
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В кошику  од. на суму  грн.
MTFDDAT240MBD-1AK12ITYY MTFDDAT240MBD-1AK12ITYY Micron Technology Inc. m500it_msata_-industrial.pdf Description: SSD 240GB MSATA MLC SATAIII 3.3V
Packaging: Bulk
Size / Dimension: 50.80mm x 29.85mm x 4.75mm
Memory Size: 240GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Form Factor: mSATA
Speed - Read: 500MB/s
Speed - Write: 250MB/s
товару немає в наявності
В кошику  од. на суму  грн.
MTFDDAT240MBD-AAK12AIYYES Micron Technology Inc. Description: SSD 240GB MSATA MLC SATAIII 3.3V
Packaging: Bulk
Size / Dimension: 50.80mm x 29.85mm x 4.75mm
Memory Size: 240GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Form Factor: mSATA
Speed - Read: 500MB/s
Speed - Write: 250MB/s
товару немає в наявності
В кошику  од. на суму  грн.
MTFC32GAZAQHD-AIT TR MTFC32GAZAQHD-AIT TR Micron Technology Inc. mtfc32gazaqhd-ait?login Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MTFC32GAZAQHD-AIT TR MTFC32GAZAQHD-AIT TR Micron Technology Inc. mtfc32gazaqhd-ait?login Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1430 шт:
термін постачання 21-31 дні (днів)
1+1504.04 грн
10+1341.59 грн
25+1299.19 грн
50+1189.31 грн
100+1161.68 грн
В кошику  од. на суму  грн.
MTFC64GAZAQHD-IT TR MTFC64GAZAQHD-IT TR Micron Technology Inc. Description: IC FLASH 512GBIT EMMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
на замовлення 1514 шт:
термін постачання 21-31 дні (днів)
1+2867.01 грн
10+2449.24 грн
25+2335.36 грн
50+2113.98 грн
100+2038.98 грн
250+1943.77 грн
В кошику  од. на суму  грн.
MTFC32GAZAQHD-WT TR MTFC32GAZAQHD-WT TR Micron Technology Inc. mtfc32gazaqhd-wt?login Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC_5.1
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
на замовлення 2215 шт:
термін постачання 21-31 дні (днів)
1+1250.43 грн
10+1115.97 грн
25+1080.91 грн
50+989.62 грн
100+965.10 грн
250+958.75 грн
В кошику  од. на суму  грн.
MTFC32GAZAQHD-IT TR MTFC32GAZAQHD-IT TR Micron Technology Inc. mtfc32gazaqhd-it?login Description: IC FLASH 256GBIT EMMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
на замовлення 2843 шт:
термін постачання 21-31 дні (днів)
1+1370.52 грн
10+1223.45 грн
25+1184.87 грн
50+1084.73 грн
100+1057.79 грн
250+1055.02 грн
В кошику  од. на суму  грн.
MTFC32GAZAQHD-AIT MTFC32GAZAQHD-AIT Micron Technology Inc. mtfc32gazaqhd-ait?login Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Tray
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1097 шт:
термін постачання 21-31 дні (днів)
1+1805.53 грн
10+1543.52 грн
25+1471.95 грн
40+1348.07 грн
80+1300.40 грн
230+1230.81 грн
440+1170.32 грн
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MTFC128GAJAEDN-IT TR MTFC128GAJAEDN-IT TR Micron Technology Inc. Description: IC FLASH 1TBIT MMC 169LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 169-LFBGA (14x18)
Memory Interface: MMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MTFC128GAJAEDN-IT MTFC128GAJAEDN-IT Micron Technology Inc. Description: IC FLASH 1TBIT MMC 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 169-LFBGA (14x18)
Memory Interface: MMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MTFC128GAJAEDN-AIT TR MTFC128GAJAEDN-AIT TR Micron Technology Inc. Description: IC FLASH 1TB MMC 169LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 169-LFBGA (14x18)
Memory Interface: MMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT48LC32M16A2P-75:C TR MT48LC32M16A2P-75:C TR Micron Technology Inc. MT48LCxxMxA2_Rev.R_May2015.pdf Description: IC DRAM 512MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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MT48LC32M16A2P-75:C TR MT48LC32M16A2P-75:C TR Micron Technology Inc. MT48LCxxMxA2_Rev.R_May2015.pdf Description: IC DRAM 512MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MTFDHAL3T2MCE-1AN1ZABYY Micron Technology Inc. 9100_hhhl_u_2_pcie_ssd.pdf Description: SSD 3.2TB U.2 MOD MLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.50mm x 69.85mm x 15.00mm
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: NVMe
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 12V
Form Factor: U.2 Module
Speed - Read: 3.0GB/s
Speed - Write: 2.0GB/s
товару немає в наявності
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MTFDHAL800MCE-1AN1ZABYY Micron Technology Inc. Description: SSD 800GB U.2 MOD MLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.50mm x 69.85mm x 15.00mm
Memory Size: 800GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: NVMe
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 12V
Form Factor: U.2 Module
Speed - Read: 2.1GB/s
Speed - Write: 650MB/s
товару немає в наявності
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MTFDHAL1T6TCU-1AR1ZABYY Micron Technology Inc. 9200_ssd_product_brief.pdf Description: SSD 1.6TB U.2 MOD TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 1.6TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 2.7GB/s
Speed - Write: 1.95GB/s
товару немає в наявності
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MTFDHAL1T9TCT-1AR1ZABYY Micron Technology Inc. 9200_ssd_product_brief.pdf Description: SSD 1.92TB U.2 TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 1.92TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 2.7GB/s
Speed - Write: 1.95GB/s
товару немає в наявності
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MT41K256M16TW-107:P TR MT41K_DDR3L_4Gb_Rev.Q_Dec2017_DS.pdf
MT41K256M16TW-107:P TR
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 96FBGA
Packaging: Cut Tape (CT)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
на замовлення 4678 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+408.13 грн
10+366.17 грн
25+355.11 грн
50+325.39 грн
100+317.58 грн
250+307.34 грн
500+295.93 грн
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MT25TL512HBA8ESF-0AAT mt25t_qljs_l_512_xba_0.pdf
Виробник: Micron Technology Inc.
Description: IC FLASH 512MBIT SPI 16SOP2
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP2
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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MT53D512M32D2DS-053 WT:D
Виробник: Micron Technology Inc.
Description: LPDDR4 16Gb 512Mb x32 3733 Mbps
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+965.75 грн
300+849.11 грн
500+808.68 грн
1000+720.97 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
MT53D512M32D2DS-053 WT:D TR
MT53D512M32D2DS-053 WT:D TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT 1.866GHZ 200WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
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MT53D512M32D2DS-053 WT:D TR
MT53D512M32D2DS-053 WT:D TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT 1.866GHZ 200WFBGA
Packaging: Cut Tape (CT)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 WT:B MT53E512M32D1_MT53E1G32D2_MT53E512M64D2_RevG_May2022.pdf
MT53E1G32D2FW-046 WT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
на замовлення 1574 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4179.58 грн
10+3716.92 грн
25+3596.12 грн
50+3290.22 грн
100+3206.95 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 WT:A
MT53E1G32D2FW-046 WT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:B
MT53E1G32D2FW-046 IT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2518.50 грн
10+2243.03 грн
25+2171.07 грн
50+1986.91 грн
100+1937.04 грн
250+1872.37 грн
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MT53E1G32D2FW-046 AAT:B 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AAT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1492 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7058.35 грн
10+6266.68 грн
25+6060.35 грн
50+5543.55 грн
100+5402.42 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 WT:B TR
MT53E1G32D2FW-046 WT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
товару немає в наявності
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MT53E1G32D2FW-046 WT:A TR
MT53E1G32D2FW-046 WT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:A TR
MT53E1G32D2FW-046 IT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:A
MT53E1G32D2FW-046 IT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 IT:B TR
MT53E1G32D2FW-046 IT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
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MT53E1G32D2FW-046 AIT:A TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AIT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:B TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AIT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:A 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AIT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AIT:B 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AIT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1278 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6439.43 грн
10+5719.20 грн
25+5531.28 грн
50+5059.76 грн
100+4931.06 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:A TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AAT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:A 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AAT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AAT:B TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AAT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:A 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AUT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:A TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AUT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:B MT53E1G32D2FW-046.pdf
MT53E1G32D2FW-046 AUT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1345 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8072.80 грн
10+7165.60 грн
25+6929.06 грн
50+6337.90 грн
100+6176.38 грн
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AUT:B TR 200b_z32m_sdp_ddp_qdp_auto_lpddr4_lpddr4x.pdf
MT53E1G32D2FW-046 AUT:B TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT53E1G32D2FW-046 AIT:C
MT53E1G32D2FW-046 AIT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Qualification: AEC-Q100
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4723.76 грн
10+4198.49 грн
25+4061.33 грн
50+3715.57 грн
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MT53E1G32D2FW-046 AIT:C TR
MT53E1G32D2FW-046 AIT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:C TR
MT53E1G32D2FW-046 AAT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AAT:C
MT53E1G32D2FW-046 AAT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:C
MT53E1G32D2FW-046 AUT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Qualification: AEC-Q100
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MT53E1G32D2FW-046 AUT:C TR
MT53E1G32D2FW-046 AUT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Qualification: AEC-Q100
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MT29TZZZ8D5JKETS-107 W.95Q TR
Виробник: Micron Technology Inc.
Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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MT29TZZZ8D5JKETS-107 W.95Q
Виробник: Micron Technology Inc.
Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Bulk
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
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MT49H8M36FM-33 TR MT49H32,16,8Mx(x).pdf
MT49H8M36FM-33 TR
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-FBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 8M x 36
DigiKey Programmable: Not Verified
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MT49H16M18FM-33 TR MT49H32,16,8Mx(x).pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 16M x 18
DigiKey Programmable: Not Verified
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MT49H32M9FM-33 TR MT49H32,16,8Mx(x).pdf
MT49H32M9FM-33 TR
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32M x 9
DigiKey Programmable: Not Verified
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MT49H16M18FM-33:B TR 288mb_rldram_2_sio.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 16M x 18
DigiKey Programmable: Not Verified
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MT49H32M9FM-33:B TR csn04.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32M x 9
DigiKey Programmable: Not Verified
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MTFC128GAZAQJP-AIT
MTFC128GAZAQJP-AIT
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT MMC 153VFBGA
Packaging: Tray
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Grade: Automotive
Memory Interface: eMMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MTFC128GAZAQJP-AIT TR
MTFC128GAZAQJP-AIT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT MMC 153VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Grade: Automotive
Memory Interface: eMMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT58L64L32PT-6 TR
Виробник: Micron Technology Inc.
Description: SRAM SYNC QUAD 2M-BIT 64KX32
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT58L64L32FT-10TR MICTS01079-1.pdf?t.download=true&u=5oefqw
MT58L64L32FT-10TR
Виробник: Micron Technology Inc.
Description: IC SRAM 2MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Standard
Clock Frequency: 66 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 32
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
51+501.35 грн
Мінімальне замовлення: 51
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MTFDDAT240MBD-1AK12AIYY
Виробник: Micron Technology Inc.
Description: SSD 240GB MSATA MLC SATAIII 3.3V
Packaging: Bulk
Size / Dimension: 50.80mm x 29.85mm x 4.75mm
Memory Size: 240GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Form Factor: mSATA
Speed - Read: 500MB/s
Speed - Write: 250MB/s
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MTFDDAT240MBD-1AK12ITYY m500it_msata_-industrial.pdf
MTFDDAT240MBD-1AK12ITYY
Виробник: Micron Technology Inc.
Description: SSD 240GB MSATA MLC SATAIII 3.3V
Packaging: Bulk
Size / Dimension: 50.80mm x 29.85mm x 4.75mm
Memory Size: 240GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Form Factor: mSATA
Speed - Read: 500MB/s
Speed - Write: 250MB/s
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MTFDDAT240MBD-AAK12AIYYES
Виробник: Micron Technology Inc.
Description: SSD 240GB MSATA MLC SATAIII 3.3V
Packaging: Bulk
Size / Dimension: 50.80mm x 29.85mm x 4.75mm
Memory Size: 240GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Form Factor: mSATA
Speed - Read: 500MB/s
Speed - Write: 250MB/s
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MTFC32GAZAQHD-AIT TR mtfc32gazaqhd-ait?login
MTFC32GAZAQHD-AIT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MTFC32GAZAQHD-AIT TR mtfc32gazaqhd-ait?login
MTFC32GAZAQHD-AIT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1430 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1504.04 грн
10+1341.59 грн
25+1299.19 грн
50+1189.31 грн
100+1161.68 грн
В кошику  од. на суму  грн.
MTFC64GAZAQHD-IT TR
MTFC64GAZAQHD-IT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 512GBIT EMMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
на замовлення 1514 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2867.01 грн
10+2449.24 грн
25+2335.36 грн
50+2113.98 грн
100+2038.98 грн
250+1943.77 грн
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MTFC32GAZAQHD-WT TR mtfc32gazaqhd-wt?login
MTFC32GAZAQHD-WT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC_5.1
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
на замовлення 2215 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1250.43 грн
10+1115.97 грн
25+1080.91 грн
50+989.62 грн
100+965.10 грн
250+958.75 грн
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MTFC32GAZAQHD-IT TR mtfc32gazaqhd-it?login
MTFC32GAZAQHD-IT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 256GBIT EMMC 153VFBGA
Packaging: Cut Tape (CT)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
на замовлення 2843 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1370.52 грн
10+1223.45 грн
25+1184.87 грн
50+1084.73 грн
100+1057.79 грн
250+1055.02 грн
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MTFC32GAZAQHD-AIT mtfc32gazaqhd-ait?login
MTFC32GAZAQHD-AIT
Виробник: Micron Technology Inc.
Description: IC FLASH 256GBIT MMC 153VFBGA
Packaging: Tray
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 32G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1097 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1805.53 грн
10+1543.52 грн
25+1471.95 грн
40+1348.07 грн
80+1300.40 грн
230+1230.81 грн
440+1170.32 грн
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MTFC128GAJAEDN-IT TR
MTFC128GAJAEDN-IT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT MMC 169LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 169-LFBGA (14x18)
Memory Interface: MMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MTFC128GAJAEDN-IT
MTFC128GAJAEDN-IT
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT MMC 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 169-LFBGA (14x18)
Memory Interface: MMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MTFC128GAJAEDN-AIT TR
MTFC128GAJAEDN-AIT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1TB MMC 169LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 169-LFBGA (14x18)
Memory Interface: MMC
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MT48LC32M16A2P-75:C TR MT48LCxxMxA2_Rev.R_May2015.pdf
MT48LC32M16A2P-75:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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MT48LC32M16A2P-75:C TR MT48LCxxMxA2_Rev.R_May2015.pdf
MT48LC32M16A2P-75:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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MTFDHAL3T2MCE-1AN1ZABYY 9100_hhhl_u_2_pcie_ssd.pdf
Виробник: Micron Technology Inc.
Description: SSD 3.2TB U.2 MOD MLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.50mm x 69.85mm x 15.00mm
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: NVMe
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 12V
Form Factor: U.2 Module
Speed - Read: 3.0GB/s
Speed - Write: 2.0GB/s
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MTFDHAL800MCE-1AN1ZABYY
Виробник: Micron Technology Inc.
Description: SSD 800GB U.2 MOD MLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.50mm x 69.85mm x 15.00mm
Memory Size: 800GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (MLC)
Type: NVMe
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 12V
Form Factor: U.2 Module
Speed - Read: 2.1GB/s
Speed - Write: 650MB/s
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MTFDHAL1T6TCU-1AR1ZABYY 9200_ssd_product_brief.pdf
Виробник: Micron Technology Inc.
Description: SSD 1.6TB U.2 MOD TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 1.6TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 2.7GB/s
Speed - Write: 1.95GB/s
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MTFDHAL1T9TCT-1AR1ZABYY 9200_ssd_product_brief.pdf
Виробник: Micron Technology Inc.
Description: SSD 1.92TB U.2 TLC NVME 12V
Packaging: Bulk
Size / Dimension: 100.20mm x 69.85mm x 14.80mm
Memory Size: 1.92TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 1.98 oz (56 g)
Operating Temperature: 0°C ~ 35°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: U.2 Module
Speed - Read: 2.7GB/s
Speed - Write: 1.95GB/s
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