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MT41K512M16VRP-107 AIT:P MT41K512M16VRP-107 AIT:P Micron Technology Inc. ddr3l-8gb-x16-1cs-twindie-v00h.pdf Description: IC DRAM 8GBIT PAR 96FBGA
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
DigiKey Programmable: Not Verified
на замовлення 1224 шт:
термін постачання 21-31 дні (днів)
1+2199.91 грн
10+1960.89 грн
25+1898.49 грн
50+1737.77 грн
100+1694.40 грн
250+1638.05 грн
В кошику  од. на суму  грн.
MTFDDAV1T9TDS-1AW15ABYY Micron Technology Inc. Description: SSD 1.92TB M.2 TLC SATA III 3V
Packaging: Bulk
Memory Size: 1.92TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Voltage - Supply: 3V
Form Factor: M.2 Module
Speed - Read: 540MB/s
Speed - Write: 520MB/s
товару немає в наявності
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MT47H64M16NF-25E:M TR MT47H64M16NF-25E:M TR Micron Technology Inc. Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT47H64M16NF-25E:M TR MT47H64M16NF-25E:M TR Micron Technology Inc. Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 1618 шт:
термін постачання 21-31 дні (днів)
1+362.80 грн
10+310.55 грн
25+296.27 грн
50+268.25 грн
100+258.79 грн
250+246.79 грн
500+234.16 грн
1000+225.87 грн
В кошику  од. на суму  грн.
MT47H32M16NF-25E:H TR MT47H32M16NF-25E:H TR Micron Technology Inc. 512MbDDR2.pdf Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT47H32M16NF-25E:H TR MT47H32M16NF-25E:H TR Micron Technology Inc. 512MbDDR2.pdf Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
2+332.85 грн
10+298.77 грн
25+289.91 грн
50+265.77 грн
100+259.47 грн
250+251.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MT47H64M16NF-25E IT:M TR MT47H64M16NF-25E IT:M TR Micron Technology Inc. 1gb_ddr2.pdf Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT47H64M16NF-25E IT:M TR MT47H64M16NF-25E IT:M TR Micron Technology Inc. 1gb_ddr2.pdf Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
1+356.81 грн
10+320.69 грн
25+311.13 грн
50+285.21 грн
100+278.42 грн
В кошику  од. на суму  грн.
MT47H64M16NF-25E AIT:M TR MT47H64M16NF-25E AIT:M TR Micron Technology Inc. Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT47H64M16NF-25E AIT:M TR MT47H64M16NF-25E AIT:M TR Micron Technology Inc. Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 845 шт:
термін постачання 21-31 дні (днів)
2+327.72 грн
10+293.99 грн
25+285.26 грн
50+261.47 грн
100+255.25 грн
250+247.07 грн
500+237.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MT47H64M16NF-25E AAT:M TR MT47H64M16NF-25E AAT:M TR Micron Technology Inc. 557_1gb_DDR2_automotive_AUT_Addendum.pdf Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT47H64M16NF-25E AAT:M TR MT47H64M16NF-25E AAT:M TR Micron Technology Inc. 557_1gb_DDR2_automotive_AUT_Addendum.pdf Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1650 шт:
термін постачання 21-31 дні (днів)
1+430.40 грн
10+386.03 грн
25+374.45 грн
50+343.17 грн
100+334.96 грн
250+324.18 грн
500+310.94 грн
1000+303.12 грн
В кошику  од. на суму  грн.
MT47H32M16NF-25E AAT:H TR MT47H32M16NF-25E AAT:H TR Micron Technology Inc. 512mb_ddr2_automotive.pdf Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT47H32M16NF-25E AAT:H TR MT47H32M16NF-25E AAT:H TR Micron Technology Inc. 512mb_ddr2_automotive.pdf Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 315 шт:
термін постачання 21-31 дні (днів)
1+396.17 грн
10+355.30 грн
25+344.65 грн
50+315.86 грн
100+308.29 грн
250+298.37 грн
В кошику  од. на суму  грн.
M29W400DB55ZE6F TR Micron Technology Inc. Description: IC FLASH 4MBIT PARALLEL 48TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TFBGA (6x9)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8, 256K x 16
DigiKey Programmable: Not Verified
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M29W400DB55N6F TR Micron Technology Inc. Description: IC FLASH 4MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8, 256K x 16
DigiKey Programmable: Not Verified
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M29W320ET70N6F TR M29W320ET70N6F TR Micron Technology Inc. Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
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M29W400FB5AN6F TR Micron Technology Inc. m29w800f_400f.pdf?rev=ec2cc94777f04100b622e0857b03eb23 Description: IC FLASH 4MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8, 256K x 16
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
M29W640GH70ZF6F TR Micron Technology Inc. m29w640f.pdf?rev=0ef5ab29cdfc49fbad927ba7de63291f Description: IC FLASH 64MBIT PARALLEL 64TBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-TBGA (10x13)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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M29W640GL70NB6F TR M29W640GL70NB6F TR Micron Technology Inc. m29w640f.pdf?rev=0ef5ab29cdfc49fbad927ba7de63291f Description: IC FLASH 64MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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MT45W2MW16BAFB-708 WT MT45W2MW16BAFB-708 WT Micron Technology Inc. MT45W%281%2C2%29MW16BA.pdf Description: IC PSRAM 32MBIT PARALLEL 54VFBGA
Packaging: Box
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Memory Format: PSRAM
Supplier Device Package: 54-VFBGA (6x9)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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MT53E512M32D1ZW-046 IT:B MT53E512M32D1ZW-046 IT:B Micron Technology Inc. Description: IC DRAM 16GBIT 2.133GHZ 200WFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
на замовлення 755 шт:
термін постачання 21-31 дні (днів)
1+1360.50 грн
10+1214.62 грн
25+1176.50 грн
40+1085.84 грн
80+1059.08 грн
230+1018.94 грн
440+978.45 грн
В кошику  од. на суму  грн.
MT53E256M32D1KS-046 WT:L MT53E256M32D1KS-046 WT:L Micron Technology Inc. Description: IC DRAM 8GBIT PAR 200VFBGA
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 256M x 32
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
1+892.46 грн
10+795.54 грн
25+777.50 грн
40+725.73 грн
80+638.87 грн
В кошику  од. на суму  грн.
MT25QU01GBBB8E12-0AAT TR MT25QU01GBBB8E12-0AAT TR Micron Technology Inc. MT25QU01GBBB_DS.pdf Description: IC FLASH 1GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Verified
Qualification: AEC-Q100
товару немає в наявності
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MT25QU01GBBB8E12-0AAT TR MT25QU01GBBB8E12-0AAT TR Micron Technology Inc. MT25QU01GBBB_DS.pdf Description: IC FLASH 1GBIT SPI 24TPBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Verified
Qualification: AEC-Q100
на замовлення 1974 шт:
термін постачання 21-31 дні (днів)
1+1219.32 грн
10+1088.71 грн
25+1054.62 грн
50+965.59 грн
100+941.71 грн
250+933.04 грн
В кошику  од. на суму  грн.
MT28HL04GGBB1EBK-0GCT Micron Technology Inc. Description: NOR FLASH 256MX16 PLASTIC 3.3V
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT53E512M64D2RR-046 WT:B Micron Technology Inc. Description: IC MEMORY DRAM 32G 512MX64 FBGA
Packaging: Tray
Package / Case: 556-BGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 556-WFBGA
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 64
DigiKey Programmable: Not Verified
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MT46H32M32LFCM-6 L IT:A MT46H32M32LFCM-6 L IT:A Micron Technology Inc. MT46H%2832%2C64%29MxxLF.pdf Description: IC DRAM 1GBIT PARALLEL 90VFBGA
Packaging: Tray
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT46H32M32LFCM-6 L IT:A TR MT46H32M32LFCM-6 L IT:A TR Micron Technology Inc. MT46H%2832%2C64%29MxxLF.pdf Description: IC DRAM 1GBIT PARALLEL 90VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29C4G48MAYBBAKS-48 IT Micron Technology Inc. Description: IC FLASH RAM 4GBIT PAR 208MHZ
Packaging: Tray
Memory Size: 4Gbit (NAND), 2Gbit (LPDRAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND, Mobile LPDRAM
Clock Frequency: 208 MHz
Memory Format: FLASH, RAM
Memory Interface: Parallel
Memory Organization: 512M x 8 (NAND), 64M x 32 (LPDRAM)
DigiKey Programmable: Not Verified
на замовлення 1140 шт:
термін постачання 21-31 дні (днів)
1+1196.22 грн
10+1022.96 грн
25+975.55 грн
40+893.51 грн
80+861.92 грн
230+815.86 грн
440+775.80 грн
В кошику  од. на суму  грн.
MT25TL01GHBB8ESF-0SIT TR MT25TL01GHBB8ESF-0SIT TR Micron Technology Inc. Description: IC FLASH 1GBIT SPI 133MHZ 16SOP2
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP2
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT42L32M32D2AC-25 AAT:A MT42L32M32D2AC-25 AAT:A Micron Technology Inc. Description: IC DRAM 1GBIT PARALLEL 134FBGA
Packaging: Tray
Package / Case: 134-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 134-FBGA (10x11.5)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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В кошику  од. на суму  грн.
MT25QU02GCBB8E12-0SIT TR MT25QU02GCBB8E12-0SIT TR Micron Technology Inc. mt25qu02gcbb8e12-0sit Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Verified
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В кошику  од. на суму  грн.
MT25QU02GCBB8E12-0SIT TR MT25QU02GCBB8E12-0SIT TR Micron Technology Inc. mt25qu02gcbb8e12-0sit Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Verified
на замовлення 1167 шт:
термін постачання 21-31 дні (днів)
1+2215.31 грн
10+1893.98 грн
25+1806.08 грн
50+1635.02 грн
100+1577.12 грн
250+1503.55 грн
500+1426.30 грн
В кошику  од. на суму  грн.
MT25QU02GCBB8E12-0AAT TR Micron Technology Inc. mt25qu02gcbb8e12-0sit Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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В кошику  од. на суму  грн.
MT25QU02GCBB8E12-0AUT TR MT25QU02GCBB8E12-0AUT TR Micron Technology Inc. Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 1.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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В кошику  од. на суму  грн.
PN28F128M29EWHA TR Micron Technology Inc. Description: IC FLASH 128MBIT PARALLEL
Packaging: Tape & Reel (TR)
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 16M x 8, 8M x 16
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
PC28F128J3F75B TR PC28F128J3F75B TR Micron Technology Inc. J3_65_SBC.pdf Description: IC FLASH 128MBIT PAR 64EASYBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-EasyBGA (10x13)
Write Cycle Time - Word, Page: 75ns
Memory Interface: Parallel
Access Time: 75 ns
Memory Organization: 16M x 8, 8M x 16
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
JS28F128P30B85A JS28F128P30B85A Micron Technology Inc. P30%20StrataFlash%20Embedded%20Memory.pdf Description: IC FLASH 128MBIT PAR 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 85ns
Memory Interface: Parallel
Access Time: 85 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT62F1G16D1DS-023 IT:B MT62F1G16D1DS-023 IT:B Micron Technology Inc. 315b441b563by42msdpddpqdp8dplpddr5xitwt.pdf Description: IC DRAM 16GBIT PAR 200WFBGA
Packaging: Box
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Voltage - Supply: 1.05V
Technology: SDRAM - Mobile LPDDR5
Clock Frequency: 4.266 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 16
DigiKey Programmable: Not Verified
на замовлення 922 шт:
термін постачання 21-31 дні (днів)
1+10740.27 грн
10+9526.91 грн
25+9211.10 грн
50+8424.56 грн
В кошику  од. на суму  грн.
MT40A2G8AG-062E AUT:F MT40A2G8AG-062E AUT:F Micron Technology Inc. 16gb-auto-ddr4-z42b.pdf Description: IC DRAM 16GBIT POD FBGA
Packaging: Box
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x11)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1202 шт:
термін постачання 21-31 дні (днів)
1+10659.83 грн
10+9455.89 грн
25+9142.38 грн
50+8361.74 грн
В кошику  од. на суму  грн.
MT40A2G8SA-062E IT:F TR MT40A2G8SA-062E IT:F TR Micron Technology Inc. 16gb-auto-ddr4-z42b.pdf Description: IC DRAM 16GBIT PARALLEL 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x11)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
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MT40A1G16TB-062E IT:F TR MT40A1G16TB-062E IT:F TR Micron Technology Inc. 16gb-ddr4-sdram.pdf Description: IC DRAM 16GBIT PARALLEL 96FBGA
Packaging: Cut Tape (CT)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (7.5x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 19 ns
Memory Organization: 1G x 16
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT53E1G16D1ZW-046 WT:C TR MT53E1G16D1ZW-046 WT:C TR Micron Technology Inc. Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 16
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В кошику  од. на суму  грн.
MT40A2G8AG-062E AIT:F TR Micron Technology Inc. 16gb_auto_ddr4_z42b.pdf Description: IC DRAM 16GBIT POD FBGA
Packaging: Tape & Reel (TR)
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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В кошику  од. на суму  грн.
MT53E1G16D1ZW-046 WT:C MT53E1G16D1ZW-046 WT:C Micron Technology Inc. Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 16
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В кошику  од. на суму  грн.
MT40A2G8JE-062E AIT:E TR Micron Technology Inc. 16gb_auto_ddr4_z32d.pdf Description: IC DRAM 16GBIT POD 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9x11)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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В кошику  од. на суму  грн.
MT40A2G8AG-062E AAT:F TR Micron Technology Inc. 16gb_auto_ddr4_z42b.pdf Description: IC DRAM 16GBIT POD FBGA
Packaging: Tape & Reel (TR)
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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В кошику  од. на суму  грн.
MT53E1G16D1ZW-046 AIT:C TR MT53E1G16D1ZW-046 AIT:C TR Micron Technology Inc. Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 16
Qualification: AEC-Q100
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В кошику  од. на суму  грн.
MT53E1G16D1ZW-046 AIT:C MT53E1G16D1ZW-046 AIT:C Micron Technology Inc. Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 16
Qualification: AEC-Q100
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В кошику  од. на суму  грн.
MT60B4G4HB-48B:A TR Micron Technology Inc. Description: IC DRAM 16GBIT POD 82VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 82-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Technology: SDRAM - DDR5
Clock Frequency: 2.4 GHz
Memory Format: DRAM
Supplier Device Package: 82-VFBGA (9x11)
Memory Interface: POD_11
Memory Organization: 4G x 4
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В кошику  од. на суму  грн.
MT40A2G4WE-075E:D TR MT40A2G4WE-075E:D TR Micron Technology Inc. 8gb_ddr4_sdram.pdf?rev=74679247a1e24e57b6726071152f1384 Description: IC DRAM 8GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.33 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x12)
Memory Interface: Parallel
Memory Organization: 2G x 4
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F1T08EEHAFJ4-3ITFES:A TR MT29F1T08EEHAFJ4-3ITFES:A TR Micron Technology Inc. Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MT29F1T08EEHAFJ4-3ITFES:A MT29F1T08EEHAFJ4-3ITFES:A Micron Technology Inc. Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Tray
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMHAFJ4-3T:A TR MT29F2T08EMHAFJ4-3T:A TR Micron Technology Inc. Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMHAFJ4-3ITF:A MT29F2T08EMHAFJ4-3ITF:A Micron Technology Inc. Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Bulk
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F2T08EMHAFJ4-3ITF:A TR MT29F2T08EMHAFJ4-3ITF:A TR Micron Technology Inc. Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F2T08EMHAFJ4-3ITFES:A TR MT29F2T08EMHAFJ4-3ITFES:A TR Micron Technology Inc. Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F2T08EMHAFJ4-3ITFES:A MT29F2T08EMHAFJ4-3ITFES:A Micron Technology Inc. Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tray
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT29F512G08CMCCBH7-6R:C TR MT29F512G08CMCCBH7-6R:C TR Micron Technology Inc. Description: IC FLASH 512GBIT PAR 152TBGA
Packaging: Tape & Reel (TR)
Package / Case: 152-TBGA
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (MLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 152-TBGA (14x18)
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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MT41K512M16VRP-107 AIT:P ddr3l-8gb-x16-1cs-twindie-v00h.pdf
MT41K512M16VRP-107 AIT:P
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 96FBGA
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
DigiKey Programmable: Not Verified
на замовлення 1224 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2199.91 грн
10+1960.89 грн
25+1898.49 грн
50+1737.77 грн
100+1694.40 грн
250+1638.05 грн
В кошику  од. на суму  грн.
MTFDDAV1T9TDS-1AW15ABYY
Виробник: Micron Technology Inc.
Description: SSD 1.92TB M.2 TLC SATA III 3V
Packaging: Bulk
Memory Size: 1.92TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Voltage - Supply: 3V
Form Factor: M.2 Module
Speed - Read: 540MB/s
Speed - Write: 520MB/s
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MT47H64M16NF-25E:M TR
MT47H64M16NF-25E:M TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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MT47H64M16NF-25E:M TR
MT47H64M16NF-25E:M TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 1618 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+362.80 грн
10+310.55 грн
25+296.27 грн
50+268.25 грн
100+258.79 грн
250+246.79 грн
500+234.16 грн
1000+225.87 грн
В кошику  од. на суму  грн.
MT47H32M16NF-25E:H TR 512MbDDR2.pdf
MT47H32M16NF-25E:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT47H32M16NF-25E:H TR 512MbDDR2.pdf
MT47H32M16NF-25E:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+332.85 грн
10+298.77 грн
25+289.91 грн
50+265.77 грн
100+259.47 грн
250+251.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MT47H64M16NF-25E IT:M TR 1gb_ddr2.pdf
MT47H64M16NF-25E IT:M TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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MT47H64M16NF-25E IT:M TR 1gb_ddr2.pdf
MT47H64M16NF-25E IT:M TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+356.81 грн
10+320.69 грн
25+311.13 грн
50+285.21 грн
100+278.42 грн
В кошику  од. на суму  грн.
MT47H64M16NF-25E AIT:M TR
MT47H64M16NF-25E AIT:M TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT47H64M16NF-25E AIT:M TR
MT47H64M16NF-25E AIT:M TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 845 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+327.72 грн
10+293.99 грн
25+285.26 грн
50+261.47 грн
100+255.25 грн
250+247.07 грн
500+237.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MT47H64M16NF-25E AAT:M TR 557_1gb_DDR2_automotive_AUT_Addendum.pdf
MT47H64M16NF-25E AAT:M TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT47H64M16NF-25E AAT:M TR 557_1gb_DDR2_automotive_AUT_Addendum.pdf
MT47H64M16NF-25E AAT:M TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1650 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+430.40 грн
10+386.03 грн
25+374.45 грн
50+343.17 грн
100+334.96 грн
250+324.18 грн
500+310.94 грн
1000+303.12 грн
В кошику  од. на суму  грн.
MT47H32M16NF-25E AAT:H TR 512mb_ddr2_automotive.pdf
MT47H32M16NF-25E AAT:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT47H32M16NF-25E AAT:H TR 512mb_ddr2_automotive.pdf
MT47H32M16NF-25E AAT:H TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Cut Tape (CT)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 315 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+396.17 грн
10+355.30 грн
25+344.65 грн
50+315.86 грн
100+308.29 грн
250+298.37 грн
В кошику  од. на суму  грн.
M29W400DB55ZE6F TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4MBIT PARALLEL 48TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TFBGA (6x9)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8, 256K x 16
DigiKey Programmable: Not Verified
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M29W400DB55N6F TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8, 256K x 16
DigiKey Programmable: Not Verified
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M29W320ET70N6F TR
M29W320ET70N6F TR
Виробник: Micron Technology Inc.
Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
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M29W400FB5AN6F TR m29w800f_400f.pdf?rev=ec2cc94777f04100b622e0857b03eb23
Виробник: Micron Technology Inc.
Description: IC FLASH 4MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8, 256K x 16
DigiKey Programmable: Not Verified
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M29W640GH70ZF6F TR m29w640f.pdf?rev=0ef5ab29cdfc49fbad927ba7de63291f
Виробник: Micron Technology Inc.
Description: IC FLASH 64MBIT PARALLEL 64TBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-TBGA (10x13)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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M29W640GL70NB6F TR m29w640f.pdf?rev=0ef5ab29cdfc49fbad927ba7de63291f
M29W640GL70NB6F TR
Виробник: Micron Technology Inc.
Description: IC FLASH 64MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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MT45W2MW16BAFB-708 WT MT45W%281%2C2%29MW16BA.pdf
MT45W2MW16BAFB-708 WT
Виробник: Micron Technology Inc.
Description: IC PSRAM 32MBIT PARALLEL 54VFBGA
Packaging: Box
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Memory Format: PSRAM
Supplier Device Package: 54-VFBGA (6x9)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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MT53E512M32D1ZW-046 IT:B
MT53E512M32D1ZW-046 IT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT 2.133GHZ 200WFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
на замовлення 755 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1360.50 грн
10+1214.62 грн
25+1176.50 грн
40+1085.84 грн
80+1059.08 грн
230+1018.94 грн
440+978.45 грн
В кошику  од. на суму  грн.
MT53E256M32D1KS-046 WT:L
MT53E256M32D1KS-046 WT:L
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 200VFBGA
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 256M x 32
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+892.46 грн
10+795.54 грн
25+777.50 грн
40+725.73 грн
80+638.87 грн
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MT25QU01GBBB8E12-0AAT TR MT25QU01GBBB_DS.pdf
MT25QU01GBBB8E12-0AAT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Verified
Qualification: AEC-Q100
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MT25QU01GBBB8E12-0AAT TR MT25QU01GBBB_DS.pdf
MT25QU01GBBB8E12-0AAT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1GBIT SPI 24TPBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Verified
Qualification: AEC-Q100
на замовлення 1974 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1219.32 грн
10+1088.71 грн
25+1054.62 грн
50+965.59 грн
100+941.71 грн
250+933.04 грн
В кошику  од. на суму  грн.
MT28HL04GGBB1EBK-0GCT
Виробник: Micron Technology Inc.
Description: NOR FLASH 256MX16 PLASTIC 3.3V
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT53E512M64D2RR-046 WT:B
Виробник: Micron Technology Inc.
Description: IC MEMORY DRAM 32G 512MX64 FBGA
Packaging: Tray
Package / Case: 556-BGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 556-WFBGA
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 64
DigiKey Programmable: Not Verified
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MT46H32M32LFCM-6 L IT:A MT46H%2832%2C64%29MxxLF.pdf
MT46H32M32LFCM-6 L IT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 90VFBGA
Packaging: Tray
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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MT46H32M32LFCM-6 L IT:A TR MT46H%2832%2C64%29MxxLF.pdf
MT46H32M32LFCM-6 L IT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 90VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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MT29C4G48MAYBBAKS-48 IT
Виробник: Micron Technology Inc.
Description: IC FLASH RAM 4GBIT PAR 208MHZ
Packaging: Tray
Memory Size: 4Gbit (NAND), 2Gbit (LPDRAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND, Mobile LPDRAM
Clock Frequency: 208 MHz
Memory Format: FLASH, RAM
Memory Interface: Parallel
Memory Organization: 512M x 8 (NAND), 64M x 32 (LPDRAM)
DigiKey Programmable: Not Verified
на замовлення 1140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1196.22 грн
10+1022.96 грн
25+975.55 грн
40+893.51 грн
80+861.92 грн
230+815.86 грн
440+775.80 грн
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MT25TL01GHBB8ESF-0SIT TR
MT25TL01GHBB8ESF-0SIT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1GBIT SPI 133MHZ 16SOP2
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP2
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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MT42L32M32D2AC-25 AAT:A
MT42L32M32D2AC-25 AAT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 134FBGA
Packaging: Tray
Package / Case: 134-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 134-FBGA (10x11.5)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT25QU02GCBB8E12-0SIT TR mt25qu02gcbb8e12-0sit
MT25QU02GCBB8E12-0SIT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Verified
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MT25QU02GCBB8E12-0SIT TR mt25qu02gcbb8e12-0sit
MT25QU02GCBB8E12-0SIT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Verified
на замовлення 1167 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2215.31 грн
10+1893.98 грн
25+1806.08 грн
50+1635.02 грн
100+1577.12 грн
250+1503.55 грн
500+1426.30 грн
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MT25QU02GCBB8E12-0AAT TR mt25qu02gcbb8e12-0sit
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT25QU02GCBB8E12-0AUT TR
MT25QU02GCBB8E12-0AUT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 1.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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PN28F128M29EWHA TR
Виробник: Micron Technology Inc.
Description: IC FLASH 128MBIT PARALLEL
Packaging: Tape & Reel (TR)
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 16M x 8, 8M x 16
DigiKey Programmable: Not Verified
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PC28F128J3F75B TR J3_65_SBC.pdf
PC28F128J3F75B TR
Виробник: Micron Technology Inc.
Description: IC FLASH 128MBIT PAR 64EASYBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-EasyBGA (10x13)
Write Cycle Time - Word, Page: 75ns
Memory Interface: Parallel
Access Time: 75 ns
Memory Organization: 16M x 8, 8M x 16
DigiKey Programmable: Not Verified
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JS28F128P30B85A P30%20StrataFlash%20Embedded%20Memory.pdf
JS28F128P30B85A
Виробник: Micron Technology Inc.
Description: IC FLASH 128MBIT PAR 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 85ns
Memory Interface: Parallel
Access Time: 85 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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MT62F1G16D1DS-023 IT:B 315b441b563by42msdpddpqdp8dplpddr5xitwt.pdf
MT62F1G16D1DS-023 IT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200WFBGA
Packaging: Box
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Voltage - Supply: 1.05V
Technology: SDRAM - Mobile LPDDR5
Clock Frequency: 4.266 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 16
DigiKey Programmable: Not Verified
на замовлення 922 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10740.27 грн
10+9526.91 грн
25+9211.10 грн
50+8424.56 грн
В кошику  од. на суму  грн.
MT40A2G8AG-062E AUT:F 16gb-auto-ddr4-z42b.pdf
MT40A2G8AG-062E AUT:F
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT POD FBGA
Packaging: Box
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x11)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1202 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10659.83 грн
10+9455.89 грн
25+9142.38 грн
50+8361.74 грн
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MT40A2G8SA-062E IT:F TR 16gb-auto-ddr4-z42b.pdf
MT40A2G8SA-062E IT:F TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PARALLEL 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x11)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
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MT40A1G16TB-062E IT:F TR 16gb-ddr4-sdram.pdf
MT40A1G16TB-062E IT:F TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PARALLEL 96FBGA
Packaging: Cut Tape (CT)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (7.5x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 19 ns
Memory Organization: 1G x 16
DigiKey Programmable: Not Verified
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MT53E1G16D1ZW-046 WT:C TR
MT53E1G16D1ZW-046 WT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 16
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MT40A2G8AG-062E AIT:F TR 16gb_auto_ddr4_z42b.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT POD FBGA
Packaging: Tape & Reel (TR)
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G16D1ZW-046 WT:C
MT53E1G16D1ZW-046 WT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 16
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MT40A2G8JE-062E AIT:E TR 16gb_auto_ddr4_z32d.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT POD 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9x11)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT40A2G8AG-062E AAT:F TR 16gb_auto_ddr4_z42b.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT POD FBGA
Packaging: Tape & Reel (TR)
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G16D1ZW-046 AIT:C TR
MT53E1G16D1ZW-046 AIT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 16
Qualification: AEC-Q100
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MT53E1G16D1ZW-046 AIT:C
MT53E1G16D1ZW-046 AIT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 16
Qualification: AEC-Q100
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MT60B4G4HB-48B:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT POD 82VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 82-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Technology: SDRAM - DDR5
Clock Frequency: 2.4 GHz
Memory Format: DRAM
Supplier Device Package: 82-VFBGA (9x11)
Memory Interface: POD_11
Memory Organization: 4G x 4
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MT40A2G4WE-075E:D TR 8gb_ddr4_sdram.pdf?rev=74679247a1e24e57b6726071152f1384
MT40A2G4WE-075E:D TR
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.33 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x12)
Memory Interface: Parallel
Memory Organization: 2G x 4
DigiKey Programmable: Not Verified
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MT29F1T08EEHAFJ4-3ITFES:A TR
MT29F1T08EEHAFJ4-3ITFES:A TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MT29F1T08EEHAFJ4-3ITFES:A
MT29F1T08EEHAFJ4-3ITFES:A
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Tray
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMHAFJ4-3T:A TR
MT29F2T08EMHAFJ4-3T:A TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMHAFJ4-3ITF:A
MT29F2T08EMHAFJ4-3ITF:A
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Bulk
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMHAFJ4-3ITF:A TR
MT29F2T08EMHAFJ4-3ITF:A TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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MT29F2T08EMHAFJ4-3ITFES:A TR
MT29F2T08EMHAFJ4-3ITFES:A TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMHAFJ4-3ITFES:A
MT29F2T08EMHAFJ4-3ITFES:A
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tray
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F512G08CMCCBH7-6R:C TR
MT29F512G08CMCCBH7-6R:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 512GBIT PAR 152TBGA
Packaging: Tape & Reel (TR)
Package / Case: 152-TBGA
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (MLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 152-TBGA (14x18)
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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