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MT53E256M32D1KS-046 WT:L MT53E256M32D1KS-046 WT:L Micron Technology Inc. Description: IC DRAM 8GBIT PAR 200VFBGA
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 256M x 32
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
1+853.73 грн
10+761.02 грн
25+743.76 грн
40+694.24 грн
80+611.15 грн
В кошику  од. на суму  грн.
MT25QU01GBBB8E12-0AAT TR MT25QU01GBBB8E12-0AAT TR Micron Technology Inc. MT25QU01GBBB_DS.pdf Description: IC FLASH 1GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Verified
Qualification: AEC-Q100
товару немає в наявності
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MT25QU01GBBB8E12-0AAT TR MT25QU01GBBB8E12-0AAT TR Micron Technology Inc. MT25QU01GBBB_DS.pdf Description: IC FLASH 1GBIT SPI 24TPBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Verified
Qualification: AEC-Q100
на замовлення 1974 шт:
термін постачання 21-31 дні (днів)
1+1166.41 грн
10+1041.47 грн
25+1008.86 грн
50+923.69 грн
100+900.85 грн
250+892.55 грн
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MT28HL04GGBB1EBK-0GCT Micron Technology Inc. Description: NOR FLASH 256MX16 PLASTIC 3.3V
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT53E512M64D2RR-046 WT:B Micron Technology Inc. Description: IC MEMORY DRAM 32G 512MX64 FBGA
Packaging: Tray
Package / Case: 556-BGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 556-WFBGA
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 64
DigiKey Programmable: Not Verified
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MT46H32M32LFCM-6 L IT:A MT46H32M32LFCM-6 L IT:A Micron Technology Inc. MT46H%2832%2C64%29MxxLF.pdf Description: IC DRAM 1GBIT PARALLEL 90VFBGA
Packaging: Tray
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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MT46H32M32LFCM-6 L IT:A TR MT46H32M32LFCM-6 L IT:A TR Micron Technology Inc. MT46H%2832%2C64%29MxxLF.pdf Description: IC DRAM 1GBIT PARALLEL 90VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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MT29C4G48MAYBBAKS-48 IT Micron Technology Inc. Description: IC FLASH RAM 4GBIT PAR 208MHZ
Packaging: Tray
Memory Size: 4Gbit (NAND), 2Gbit (LPDRAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND, Mobile LPDRAM
Clock Frequency: 208 MHz
Memory Format: FLASH, RAM
Memory Interface: Parallel
Memory Organization: 512M x 8 (NAND), 64M x 32 (LPDRAM)
DigiKey Programmable: Not Verified
на замовлення 1140 шт:
термін постачання 21-31 дні (днів)
1+1144.31 грн
10+978.57 грн
25+933.22 грн
40+854.74 грн
80+824.52 грн
230+780.46 грн
440+742.14 грн
В кошику  од. на суму  грн.
MT25TL01GHBB8ESF-0SIT TR MT25TL01GHBB8ESF-0SIT TR Micron Technology Inc. Description: IC FLASH 1GBIT SPI 133MHZ 16SOP2
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP2
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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MT42L32M32D2AC-25 AAT:A MT42L32M32D2AC-25 AAT:A Micron Technology Inc. Description: IC DRAM 1GBIT PARALLEL 134FBGA
Packaging: Tray
Package / Case: 134-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 134-FBGA (10x11.5)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT25QU02GCBB8E12-0SIT TR MT25QU02GCBB8E12-0SIT TR Micron Technology Inc. mt25qu02gcbb8e12-0sit Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Verified
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MT25QU02GCBB8E12-0SIT TR MT25QU02GCBB8E12-0SIT TR Micron Technology Inc. mt25qu02gcbb8e12-0sit Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Verified
на замовлення 1167 шт:
термін постачання 21-31 дні (днів)
1+2119.19 грн
10+1811.80 грн
25+1727.71 грн
50+1564.08 грн
100+1508.69 грн
250+1438.31 грн
500+1364.41 грн
В кошику  од. на суму  грн.
MT25QU02GCBB8E12-0AAT TR Micron Technology Inc. mt25qu02gcbb8e12-0sit Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT25QU02GCBB8E12-0AUT TR MT25QU02GCBB8E12-0AUT TR Micron Technology Inc. Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 1.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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PN28F128M29EWHA TR Micron Technology Inc. Description: IC FLASH 128MBIT PARALLEL
Packaging: Tape & Reel (TR)
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 16M x 8, 8M x 16
DigiKey Programmable: Not Verified
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PC28F128J3F75B TR PC28F128J3F75B TR Micron Technology Inc. J3_65_SBC.pdf Description: IC FLASH 128MBIT PAR 64EASYBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-EasyBGA (10x13)
Write Cycle Time - Word, Page: 75ns
Memory Interface: Parallel
Access Time: 75 ns
Memory Organization: 16M x 8, 8M x 16
DigiKey Programmable: Not Verified
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JS28F128P30B85A JS28F128P30B85A Micron Technology Inc. P30%20StrataFlash%20Embedded%20Memory.pdf Description: IC FLASH 128MBIT PAR 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 85ns
Memory Interface: Parallel
Access Time: 85 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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MT62F1G16D1DS-023 IT:B MT62F1G16D1DS-023 IT:B Micron Technology Inc. 315b441b563by42msdpddpqdp8dplpddr5xitwt.pdf Description: IC DRAM 16GBIT PAR 200WFBGA
Packaging: Box
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Voltage - Supply: 1.05V
Technology: SDRAM - Mobile LPDDR5
Clock Frequency: 4.266 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 16
DigiKey Programmable: Not Verified
на замовлення 1034 шт:
термін постачання 21-31 дні (днів)
1+4501.94 грн
10+4001.86 грн
25+3871.32 грн
50+3541.79 грн
100+3451.99 грн
В кошику  од. на суму  грн.
MT40A2G8AG-062E AUT:F MT40A2G8AG-062E AUT:F Micron Technology Inc. 16gb-auto-ddr4-z42b.pdf Description: IC DRAM 16GBIT POD FBGA
Packaging: Box
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x11)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT40A2G8SA-062E IT:F TR MT40A2G8SA-062E IT:F TR Micron Technology Inc. 16gb-auto-ddr4-z42b.pdf Description: IC DRAM 16GBIT PARALLEL 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x11)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
на замовлення 1387 шт:
термін постачання 21-31 дні (днів)
1+1887.54 грн
10+1682.69 грн
25+1629.06 грн
50+1491.08 грн
100+1453.80 грн
250+1405.41 грн
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MT40A1G16TB-062E IT:F TR MT40A1G16TB-062E IT:F TR Micron Technology Inc. 16gb-auto-ddr4-z42b.pdf Description: IC DRAM 16GBIT PARALLEL 96FBGA
Packaging: Cut Tape (CT)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (7.5x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 19 ns
Memory Organization: 1G x 16
DigiKey Programmable: Not Verified
на замовлення 1410 шт:
термін постачання 21-31 дні (днів)
1+1890.00 грн
10+1684.66 грн
25+1631.01 грн
50+1492.90 грн
100+1455.61 грн
250+1407.17 грн
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MT53E1G16D1ZW-046 WT:C TR MT53E1G16D1ZW-046 WT:C TR Micron Technology Inc. Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 16
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MT40A2G8AG-062E AIT:F TR Micron Technology Inc. 16gb_auto_ddr4_z42b.pdf Description: IC DRAM 16GBIT POD FBGA
Packaging: Tape & Reel (TR)
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G16D1ZW-046 WT:C MT53E1G16D1ZW-046 WT:C Micron Technology Inc. Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 16
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MT40A2G8JE-062E AIT:E TR Micron Technology Inc. 16gb_auto_ddr4_z32d.pdf Description: IC DRAM 16GBIT POD 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9x11)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT40A2G8AG-062E AAT:F TR Micron Technology Inc. 16gb_auto_ddr4_z42b.pdf Description: IC DRAM 16GBIT POD FBGA
Packaging: Tape & Reel (TR)
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G16D1ZW-046 AIT:C TR MT53E1G16D1ZW-046 AIT:C TR Micron Technology Inc. Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 16
Qualification: AEC-Q100
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MT53E1G16D1ZW-046 AIT:C MT53E1G16D1ZW-046 AIT:C Micron Technology Inc. Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 16
Qualification: AEC-Q100
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MT60B4G4HB-48B:A TR Micron Technology Inc. Description: IC DRAM 16GBIT POD 82VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 82-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Technology: SDRAM - DDR5
Clock Frequency: 2.4 GHz
Memory Format: DRAM
Supplier Device Package: 82-VFBGA (9x11)
Memory Interface: POD_11
Memory Organization: 4G x 4
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MT40A2G4WE-075E:D TR MT40A2G4WE-075E:D TR Micron Technology Inc. 8gb_ddr4_sdram.pdf?rev=74679247a1e24e57b6726071152f1384 Description: IC DRAM 8GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.33 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x12)
Memory Interface: Parallel
Memory Organization: 2G x 4
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT29F1T08EEHAFJ4-3ITFES:A TR MT29F1T08EEHAFJ4-3ITFES:A TR Micron Technology Inc. Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F1T08EEHAFJ4-3ITFES:A MT29F1T08EEHAFJ4-3ITFES:A Micron Technology Inc. Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Tray
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F2T08EMHAFJ4-3T:A TR MT29F2T08EMHAFJ4-3T:A TR Micron Technology Inc. Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F2T08EMHAFJ4-3ITF:A MT29F2T08EMHAFJ4-3ITF:A Micron Technology Inc. Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Bulk
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F2T08EMHAFJ4-3ITF:A TR MT29F2T08EMHAFJ4-3ITF:A TR Micron Technology Inc. Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F2T08EMHAFJ4-3ITFES:A TR MT29F2T08EMHAFJ4-3ITFES:A TR Micron Technology Inc. Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F2T08EMHAFJ4-3ITFES:A MT29F2T08EMHAFJ4-3ITFES:A Micron Technology Inc. Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tray
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F512G08CMCCBH7-6R:C TR MT29F512G08CMCCBH7-6R:C TR Micron Technology Inc. Description: IC FLASH 512GBIT PAR 152TBGA
Packaging: Tape & Reel (TR)
Package / Case: 152-TBGA
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (MLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 152-TBGA (14x18)
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F512G08CMCCBH7-6ITR:C TR MT29F512G08CMCCBH7-6ITR:C TR Micron Technology Inc. Description: IC FLASH 512GBIT PAR 152TBGA
Packaging: Tape & Reel (TR)
Package / Case: 152-TBGA
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (MLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 152-TBGA (14x18)
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29E512G08CMCCBH7-6ES:C TR Micron Technology Inc. Description: IC FLASH 512GBIT PAR 152TBGA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Supplier Device Package: 152-TBGA
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F512G08CMCCBH7-6C:C MT29F512G08CMCCBH7-6C:C Micron Technology Inc. Description: IC FLASH 512GBIT PAR 152TBGA
Packaging: Tray
Package / Case: 152-TBGA
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (MLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 152-TBGA (14x18)
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F512G08CMCCBH7-6ITR:C MT29F512G08CMCCBH7-6ITR:C Micron Technology Inc. Description: IC FLASH 512GBIT PAR 152TBGA
Packaging: Tray
Package / Case: 152-TBGA
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (MLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 152-TBGA (14x18)
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29E512G08CMCCBH7-6:C Micron Technology Inc. Description: IC FLASH 512GBIT PAR 152TBGA
Packaging: Tray
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Supplier Device Package: 152-TBGA
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
M29W640GL70NA6F TR M29W640GL70NA6F TR Micron Technology Inc. m29w640f.pdf?rev=0ef5ab29cdfc49fbad927ba7de63291f Description: IC FLASH 64MBIT PAR 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
N25Q128A13EF740F TR N25Q128A13EF740F TR Micron Technology Inc. n25q_128mb_3v_65nm.pdf?rev=9d6336dba62c476fbec1db38ee83553a Description: IC FLASH 128MBIT SPI 8VDFPN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-VDFPN (6x5) (MLP8)
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 32M x 4
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT61K512M32KPA-16:E TR Micron Technology Inc. Description: IC DRAM 16GBIT POD 180FBGA
Packaging: Tape & Reel (TR)
Memory Size: 16Gbit
Technology: SGRAM - GDDR6
Memory Format: DRAM
Memory Interface: POD_135
Memory Organization: 512M x 32
товару немає в наявності
В кошику  од. на суму  грн.
MT61K512M32KPA-18:E TR MT61K512M32KPA-18:E TR Micron Technology Inc. Description: IC DRAM 16GBIT POD 180FBGA
Packaging: Tape & Reel (TR)
Package / Case: 180-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.3095V ~ 1.391V
Technology: SGRAM - GDDR6
Clock Frequency: 9 GHz
Memory Format: DRAM
Supplier Device Package: 180-FBGA (12x14)
Memory Interface: POD_135
Memory Organization: 512M x 32
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В кошику  од. на суму  грн.
MT61K512M32KPA-18:E MT61K512M32KPA-18:E Micron Technology Inc. Description: IC DRAM 16GBIT POD 180FBGA
Packaging: Tray
Package / Case: 180-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.3095V ~ 1.391V
Technology: SGRAM - GDDR6
Clock Frequency: 9 GHz
Memory Format: DRAM
Supplier Device Package: 180-FBGA (12x14)
Memory Interface: POD_135
Memory Organization: 512M x 32
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В кошику  од. на суму  грн.
MT61K512M32KPA-16:E Micron Technology Inc. Description: IC DRAM 16GBIT POD 180FBGA
Packaging: Tray
Memory Size: 16Gbit
Technology: SGRAM - GDDR6
Memory Format: DRAM
Memory Interface: POD_135
Memory Organization: 512M x 32
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В кошику  од. на суму  грн.
MT61A512M32KPA-12 AAT:E TR Micron Technology Inc. Description: GDDR6 16G 512MX32 FBGA DDP
Packaging: Tape & Reel (TR)
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В кошику  од. на суму  грн.
MT61A512M32KPA-12 AAT:E Micron Technology Inc. Description: GDDR6 16G 512MX32 FBGA DDP
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
M28W320FCB70ZB6F TR M28W320FCB70ZB6F TR Micron Technology Inc. M28W320FCB%2CFCT.pdf Description: IC FLASH 32MBIT PARALLEL 47TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 47-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 47-TFBGA (6.39x6.37)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
M28W320FCT70ZB6F TR M28W320FCT70ZB6F TR Micron Technology Inc. M28W320FCB%2CFCT.pdf Description: IC FLASH 32MBIT PARALLEL 47TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 47-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 47-TFBGA (6.39x6.37)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT53E256M32D1KS-046 IT:L MT53E256M32D1KS-046 IT:L Micron Technology Inc. Description: IC DRAM 8GBIT PAR 200VFBGA
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 256M x 32
на замовлення 116 шт:
термін постачання 21-31 дні (днів)
1+920.85 грн
10+823.14 грн
25+797.65 грн
40+736.29 грн
80+718.32 грн
В кошику  од. на суму  грн.
MT53E256M32D1KS-046 AAT:L MT53E256M32D1KS-046 AAT:L Micron Technology Inc. Description: IC DRAM 8GBIT PAR 200VFBGA
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 256M x 32
Qualification: AEC-Q100
на замовлення 161 шт:
термін постачання 21-31 дні (днів)
1+1103.38 грн
10+985.90 грн
25+955.07 грн
40+881.55 грн
80+859.92 грн
В кошику  од. на суму  грн.
MTA8ATF1G64AZ-3G2R1 Micron Technology Inc. atf8c1gx64az.pdf?rev=d84c2f819dfb4d03a17a6361488116cc Description: MODULE DDR4 SDRAM 8GB 288UDIMM
Packaging: Tray
Package / Case: 288-UDIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
на замовлення 87 шт:
термін постачання 21-31 дні (днів)
1+4400.44 грн
10+3761.38 грн
25+3586.52 грн
40+3284.49 грн
80+3167.97 грн
В кошику  од. на суму  грн.
MT53E1536M32D4DE-046 WT:C MT53E1536M32D4DE-046 WT:C Micron Technology Inc. z4bm_embedded_lpddr4x_lpddr4.pdf Description: IC DRAM 48GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 48Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1.5G x 32
DigiKey Programmable: Not Verified
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
1+3301.15 грн
10+2936.82 грн
25+2841.75 грн
50+2600.22 грн
100+2534.60 грн
В кошику  од. на суму  грн.
MT53E1536M32D4DE-046 AAT:C MT53E1536M32D4DE-046 AAT:C Micron Technology Inc. z4bm-automotive-lpddr4x-lpddr4.pdf Description: IC DRAM 48GBIT 2.133GHZ WFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 48Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1.5G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 605 шт:
термін постачання 21-31 дні (днів)
1+10577.10 грн
10+9382.72 грн
25+9071.61 грн
50+8297.02 грн
В кошику  од. на суму  грн.
MT53E1536M32D4DE-046 AIT:C MT53E1536M32D4DE-046 AIT:C Micron Technology Inc. z4bm-automotive-lpddr4x-lpddr4.pdf Description: IC DRAM 48GBIT 2.133GHZ WFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 48Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1.5G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 262 шт:
термін постачання 21-31 дні (днів)
1+9650.52 грн
10+8562.89 грн
25+8279.35 грн
50+7572.63 грн
В кошику  од. на суму  грн.
MTA9ASF1G72PZ-3G2R1 Micron Technology Inc. asf9c1gx72pz.pdf?rev=744472891779447ca496c94e652f2991 Description: MODULE DDR4 SDRAM 8GB 288UDIMM
Packaging: Tray
Package / Case: 288-UDIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
1+9709.46 грн
10+8297.02 грн
25+7910.34 грн
40+7243.65 грн
В кошику  од. на суму  грн.
MT53E256M32D1KS-046 WT:L
MT53E256M32D1KS-046 WT:L
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 200VFBGA
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 256M x 32
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+853.73 грн
10+761.02 грн
25+743.76 грн
40+694.24 грн
80+611.15 грн
В кошику  од. на суму  грн.
MT25QU01GBBB8E12-0AAT TR MT25QU01GBBB_DS.pdf
MT25QU01GBBB8E12-0AAT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
MT25QU01GBBB8E12-0AAT TR MT25QU01GBBB_DS.pdf
MT25QU01GBBB8E12-0AAT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1GBIT SPI 24TPBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Verified
Qualification: AEC-Q100
на замовлення 1974 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1166.41 грн
10+1041.47 грн
25+1008.86 грн
50+923.69 грн
100+900.85 грн
250+892.55 грн
В кошику  од. на суму  грн.
MT28HL04GGBB1EBK-0GCT
Виробник: Micron Technology Inc.
Description: NOR FLASH 256MX16 PLASTIC 3.3V
Packaging: Bulk
DigiKey Programmable: Not Verified
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MT53E512M64D2RR-046 WT:B
Виробник: Micron Technology Inc.
Description: IC MEMORY DRAM 32G 512MX64 FBGA
Packaging: Tray
Package / Case: 556-BGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 556-WFBGA
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 64
DigiKey Programmable: Not Verified
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MT46H32M32LFCM-6 L IT:A MT46H%2832%2C64%29MxxLF.pdf
MT46H32M32LFCM-6 L IT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 90VFBGA
Packaging: Tray
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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MT46H32M32LFCM-6 L IT:A TR MT46H%2832%2C64%29MxxLF.pdf
MT46H32M32LFCM-6 L IT:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 90VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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MT29C4G48MAYBBAKS-48 IT
Виробник: Micron Technology Inc.
Description: IC FLASH RAM 4GBIT PAR 208MHZ
Packaging: Tray
Memory Size: 4Gbit (NAND), 2Gbit (LPDRAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND, Mobile LPDRAM
Clock Frequency: 208 MHz
Memory Format: FLASH, RAM
Memory Interface: Parallel
Memory Organization: 512M x 8 (NAND), 64M x 32 (LPDRAM)
DigiKey Programmable: Not Verified
на замовлення 1140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1144.31 грн
10+978.57 грн
25+933.22 грн
40+854.74 грн
80+824.52 грн
230+780.46 грн
440+742.14 грн
В кошику  од. на суму  грн.
MT25TL01GHBB8ESF-0SIT TR
MT25TL01GHBB8ESF-0SIT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1GBIT SPI 133MHZ 16SOP2
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP2
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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MT42L32M32D2AC-25 AAT:A
MT42L32M32D2AC-25 AAT:A
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 134FBGA
Packaging: Tray
Package / Case: 134-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 134-FBGA (10x11.5)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT25QU02GCBB8E12-0SIT TR mt25qu02gcbb8e12-0sit
MT25QU02GCBB8E12-0SIT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Verified
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MT25QU02GCBB8E12-0SIT TR mt25qu02gcbb8e12-0sit
MT25QU02GCBB8E12-0SIT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Verified
на замовлення 1167 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2119.19 грн
10+1811.80 грн
25+1727.71 грн
50+1564.08 грн
100+1508.69 грн
250+1438.31 грн
500+1364.41 грн
В кошику  од. на суму  грн.
MT25QU02GCBB8E12-0AAT TR mt25qu02gcbb8e12-0sit
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT25QU02GCBB8E12-0AUT TR
MT25QU02GCBB8E12-0AUT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT SPI 24TPBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 1.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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PN28F128M29EWHA TR
Виробник: Micron Technology Inc.
Description: IC FLASH 128MBIT PARALLEL
Packaging: Tape & Reel (TR)
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 16M x 8, 8M x 16
DigiKey Programmable: Not Verified
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PC28F128J3F75B TR J3_65_SBC.pdf
PC28F128J3F75B TR
Виробник: Micron Technology Inc.
Description: IC FLASH 128MBIT PAR 64EASYBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-EasyBGA (10x13)
Write Cycle Time - Word, Page: 75ns
Memory Interface: Parallel
Access Time: 75 ns
Memory Organization: 16M x 8, 8M x 16
DigiKey Programmable: Not Verified
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JS28F128P30B85A P30%20StrataFlash%20Embedded%20Memory.pdf
JS28F128P30B85A
Виробник: Micron Technology Inc.
Description: IC FLASH 128MBIT PAR 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 85ns
Memory Interface: Parallel
Access Time: 85 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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MT62F1G16D1DS-023 IT:B 315b441b563by42msdpddpqdp8dplpddr5xitwt.pdf
MT62F1G16D1DS-023 IT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200WFBGA
Packaging: Box
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Voltage - Supply: 1.05V
Technology: SDRAM - Mobile LPDDR5
Clock Frequency: 4.266 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 16
DigiKey Programmable: Not Verified
на замовлення 1034 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4501.94 грн
10+4001.86 грн
25+3871.32 грн
50+3541.79 грн
100+3451.99 грн
В кошику  од. на суму  грн.
MT40A2G8AG-062E AUT:F 16gb-auto-ddr4-z42b.pdf
MT40A2G8AG-062E AUT:F
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT POD FBGA
Packaging: Box
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x11)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT40A2G8SA-062E IT:F TR 16gb-auto-ddr4-z42b.pdf
MT40A2G8SA-062E IT:F TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PARALLEL 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x11)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
на замовлення 1387 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1887.54 грн
10+1682.69 грн
25+1629.06 грн
50+1491.08 грн
100+1453.80 грн
250+1405.41 грн
В кошику  од. на суму  грн.
MT40A1G16TB-062E IT:F TR 16gb-auto-ddr4-z42b.pdf
MT40A1G16TB-062E IT:F TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PARALLEL 96FBGA
Packaging: Cut Tape (CT)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (7.5x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 19 ns
Memory Organization: 1G x 16
DigiKey Programmable: Not Verified
на замовлення 1410 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1890.00 грн
10+1684.66 грн
25+1631.01 грн
50+1492.90 грн
100+1455.61 грн
250+1407.17 грн
В кошику  од. на суму  грн.
MT53E1G16D1ZW-046 WT:C TR
MT53E1G16D1ZW-046 WT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 16
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MT40A2G8AG-062E AIT:F TR 16gb_auto_ddr4_z42b.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT POD FBGA
Packaging: Tape & Reel (TR)
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G16D1ZW-046 WT:C
MT53E1G16D1ZW-046 WT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 16
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MT40A2G8JE-062E AIT:E TR 16gb_auto_ddr4_z32d.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT POD 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9x11)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT40A2G8AG-062E AAT:F TR 16gb_auto_ddr4_z42b.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT POD FBGA
Packaging: Tape & Reel (TR)
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 19 ns
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT53E1G16D1ZW-046 AIT:C TR
MT53E1G16D1ZW-046 AIT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 16
Qualification: AEC-Q100
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MT53E1G16D1ZW-046 AIT:C
MT53E1G16D1ZW-046 AIT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 16
Qualification: AEC-Q100
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MT60B4G4HB-48B:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT POD 82VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 82-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Technology: SDRAM - DDR5
Clock Frequency: 2.4 GHz
Memory Format: DRAM
Supplier Device Package: 82-VFBGA (9x11)
Memory Interface: POD_11
Memory Organization: 4G x 4
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MT40A2G4WE-075E:D TR 8gb_ddr4_sdram.pdf?rev=74679247a1e24e57b6726071152f1384
MT40A2G4WE-075E:D TR
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.33 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x12)
Memory Interface: Parallel
Memory Organization: 2G x 4
DigiKey Programmable: Not Verified
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MT29F1T08EEHAFJ4-3ITFES:A TR
MT29F1T08EEHAFJ4-3ITFES:A TR
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MT29F1T08EEHAFJ4-3ITFES:A
MT29F1T08EEHAFJ4-3ITFES:A
Виробник: Micron Technology Inc.
Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Tray
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMHAFJ4-3T:A TR
MT29F2T08EMHAFJ4-3T:A TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMHAFJ4-3ITF:A
MT29F2T08EMHAFJ4-3ITF:A
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Bulk
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMHAFJ4-3ITF:A TR
MT29F2T08EMHAFJ4-3ITF:A TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMHAFJ4-3ITFES:A TR
MT29F2T08EMHAFJ4-3ITFES:A TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMHAFJ4-3ITFES:A
MT29F2T08EMHAFJ4-3ITFES:A
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT PARALLEL 132VBGA
Packaging: Tray
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 333 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F512G08CMCCBH7-6R:C TR
MT29F512G08CMCCBH7-6R:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 512GBIT PAR 152TBGA
Packaging: Tape & Reel (TR)
Package / Case: 152-TBGA
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (MLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 152-TBGA (14x18)
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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MT29F512G08CMCCBH7-6ITR:C TR
MT29F512G08CMCCBH7-6ITR:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 512GBIT PAR 152TBGA
Packaging: Tape & Reel (TR)
Package / Case: 152-TBGA
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (MLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 152-TBGA (14x18)
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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MT29E512G08CMCCBH7-6ES:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 512GBIT PAR 152TBGA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Supplier Device Package: 152-TBGA
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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MT29F512G08CMCCBH7-6C:C
MT29F512G08CMCCBH7-6C:C
Виробник: Micron Technology Inc.
Description: IC FLASH 512GBIT PAR 152TBGA
Packaging: Tray
Package / Case: 152-TBGA
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (MLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 152-TBGA (14x18)
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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MT29F512G08CMCCBH7-6ITR:C
MT29F512G08CMCCBH7-6ITR:C
Виробник: Micron Technology Inc.
Description: IC FLASH 512GBIT PAR 152TBGA
Packaging: Tray
Package / Case: 152-TBGA
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (MLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 152-TBGA (14x18)
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29E512G08CMCCBH7-6:C
Виробник: Micron Technology Inc.
Description: IC FLASH 512GBIT PAR 152TBGA
Packaging: Tray
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Supplier Device Package: 152-TBGA
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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M29W640GL70NA6F TR m29w640f.pdf?rev=0ef5ab29cdfc49fbad927ba7de63291f
M29W640GL70NA6F TR
Виробник: Micron Technology Inc.
Description: IC FLASH 64MBIT PAR 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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N25Q128A13EF740F TR n25q_128mb_3v_65nm.pdf?rev=9d6336dba62c476fbec1db38ee83553a
N25Q128A13EF740F TR
Виробник: Micron Technology Inc.
Description: IC FLASH 128MBIT SPI 8VDFPN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-VDFPN (6x5) (MLP8)
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 32M x 4
DigiKey Programmable: Not Verified
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MT61K512M32KPA-16:E TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT POD 180FBGA
Packaging: Tape & Reel (TR)
Memory Size: 16Gbit
Technology: SGRAM - GDDR6
Memory Format: DRAM
Memory Interface: POD_135
Memory Organization: 512M x 32
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MT61K512M32KPA-18:E TR
MT61K512M32KPA-18:E TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT POD 180FBGA
Packaging: Tape & Reel (TR)
Package / Case: 180-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.3095V ~ 1.391V
Technology: SGRAM - GDDR6
Clock Frequency: 9 GHz
Memory Format: DRAM
Supplier Device Package: 180-FBGA (12x14)
Memory Interface: POD_135
Memory Organization: 512M x 32
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MT61K512M32KPA-18:E
MT61K512M32KPA-18:E
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT POD 180FBGA
Packaging: Tray
Package / Case: 180-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.3095V ~ 1.391V
Technology: SGRAM - GDDR6
Clock Frequency: 9 GHz
Memory Format: DRAM
Supplier Device Package: 180-FBGA (12x14)
Memory Interface: POD_135
Memory Organization: 512M x 32
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MT61K512M32KPA-16:E
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT POD 180FBGA
Packaging: Tray
Memory Size: 16Gbit
Technology: SGRAM - GDDR6
Memory Format: DRAM
Memory Interface: POD_135
Memory Organization: 512M x 32
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MT61A512M32KPA-12 AAT:E TR
Виробник: Micron Technology Inc.
Description: GDDR6 16G 512MX32 FBGA DDP
Packaging: Tape & Reel (TR)
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MT61A512M32KPA-12 AAT:E
Виробник: Micron Technology Inc.
Description: GDDR6 16G 512MX32 FBGA DDP
Packaging: Bulk
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M28W320FCB70ZB6F TR M28W320FCB%2CFCT.pdf
M28W320FCB70ZB6F TR
Виробник: Micron Technology Inc.
Description: IC FLASH 32MBIT PARALLEL 47TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 47-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 47-TFBGA (6.39x6.37)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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M28W320FCT70ZB6F TR M28W320FCB%2CFCT.pdf
M28W320FCT70ZB6F TR
Виробник: Micron Technology Inc.
Description: IC FLASH 32MBIT PARALLEL 47TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 47-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 47-TFBGA (6.39x6.37)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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MT53E256M32D1KS-046 IT:L
MT53E256M32D1KS-046 IT:L
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 200VFBGA
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 256M x 32
на замовлення 116 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+920.85 грн
10+823.14 грн
25+797.65 грн
40+736.29 грн
80+718.32 грн
В кошику  од. на суму  грн.
MT53E256M32D1KS-046 AAT:L
MT53E256M32D1KS-046 AAT:L
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 200VFBGA
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 256M x 32
Qualification: AEC-Q100
на замовлення 161 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1103.38 грн
10+985.90 грн
25+955.07 грн
40+881.55 грн
80+859.92 грн
В кошику  од. на суму  грн.
MTA8ATF1G64AZ-3G2R1 atf8c1gx64az.pdf?rev=d84c2f819dfb4d03a17a6361488116cc
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 288UDIMM
Packaging: Tray
Package / Case: 288-UDIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
на замовлення 87 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4400.44 грн
10+3761.38 грн
25+3586.52 грн
40+3284.49 грн
80+3167.97 грн
В кошику  од. на суму  грн.
MT53E1536M32D4DE-046 WT:C z4bm_embedded_lpddr4x_lpddr4.pdf
MT53E1536M32D4DE-046 WT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 48GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 48Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1.5G x 32
DigiKey Programmable: Not Verified
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3301.15 грн
10+2936.82 грн
25+2841.75 грн
50+2600.22 грн
100+2534.60 грн
В кошику  од. на суму  грн.
MT53E1536M32D4DE-046 AAT:C z4bm-automotive-lpddr4x-lpddr4.pdf
MT53E1536M32D4DE-046 AAT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 48GBIT 2.133GHZ WFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 48Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1.5G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 605 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10577.10 грн
10+9382.72 грн
25+9071.61 грн
50+8297.02 грн
В кошику  од. на суму  грн.
MT53E1536M32D4DE-046 AIT:C z4bm-automotive-lpddr4x-lpddr4.pdf
MT53E1536M32D4DE-046 AIT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 48GBIT 2.133GHZ WFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 48Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1.5G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 262 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9650.52 грн
10+8562.89 грн
25+8279.35 грн
50+7572.63 грн
В кошику  од. на суму  грн.
MTA9ASF1G72PZ-3G2R1 asf9c1gx72pz.pdf?rev=744472891779447ca496c94e652f2991
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 288UDIMM
Packaging: Tray
Package / Case: 288-UDIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9709.46 грн
10+8297.02 грн
25+7910.34 грн
40+7243.65 грн
В кошику  од. на суму  грн.
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