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MT48LC4M16A2P-6A:J TR MT48LC4M16A2P-6A:J TR Micron Technology Inc. 64mb-x4x8x16-sdram.pdf Description: IC DRAM 64MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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MT48LC4M16A2P-6A:J TR MT48LC4M16A2P-6A:J TR Micron Technology Inc. 64mb-x4x8x16-sdram.pdf Description: IC DRAM 64MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
на замовлення 385 шт:
термін постачання 21-31 дні (днів)
1+413.03 грн
10+353.13 грн
25+336.82 грн
50+304.96 грн
100+294.20 грн
250+280.55 грн
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MT48LC4M16A2P-6A IT:J TR MT48LC4M16A2P-6A IT:J TR Micron Technology Inc. 64mb-x4x8x16-sdram.pdf Description: IC DRAM 64MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
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MT48LC4M16A2P-6A IT:J TR MT48LC4M16A2P-6A IT:J TR Micron Technology Inc. 64mb-x4x8x16-sdram.pdf Description: IC DRAM 64MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
на замовлення 1555 шт:
термін постачання 21-31 дні (днів)
1+453.61 грн
10+388.30 грн
25+370.35 грн
50+335.34 грн
100+323.51 грн
250+308.50 грн
500+292.71 грн
1000+282.33 грн
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MTFDDAK3T8TGB-1BC1ZABYY Micron Technology Inc. micron-5400-ssd-part-catalog-final-final-wo-mc.pdf Description: 5300 3840GB 2.5IN SSD
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 7.00mm
Memory Size: 3.84TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 2.47 oz (70.38 g)
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 540MB/s
Speed - Write: 520MB/s
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MTFDDAK3T8TGB-1BC1ZABYY TR Micron Technology Inc. micron-5400-ssd-part-catalog-final-final-wo-mc.pdf Description: SSD 5300 3840GB 2.5IN
Packaging: Tape & Reel (TR)
Size / Dimension: 100.45mm x 69.85mm x 7.00mm
Memory Size: 3.84TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 2.47 oz (70.38 g)
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 540MB/s
Speed - Write: 520MB/s
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MT53D384M64D4KA-046 XT ES:E TR Micron Technology Inc. Description: IC DRAM 24GBIT 2.133GHZ FBGA
Packaging: Tape & Reel (TR)
Memory Size: 24Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 105°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Memory Organization: 384M x 64
DigiKey Programmable: Not Verified
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MTFDHAR8TATCW-1AR1ZABYY Micron Technology Inc. 9200_ssd_product_brief.pdf Description: SSD 8TB HHHL TLC NVME 12V
Packaging: Bulk
Size / Dimension: 167.65mm x 68.89mm x 18.74mm
Memory Size: 8TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 0.353 oz (10 g)
Operating Temperature: 0°C ~ 55°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: HHHL
Speed - Read: 4.7GB/s
Speed - Write: 2.4GB/s
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MTFDHBE800TDG-1AW1ZABYY Micron Technology Inc. Description: SSD 800GB 2.5" TLC NVME
Packaging: Tray
Memory Size: 800GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 2.4GB/s
Speed - Write: 700MB/s
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MTFDHBE1T6TDG-1AW1ZABYY Micron Technology Inc. Description: SSD 1.6TB 2.5" TLC NVME
Packaging: Tray
Memory Size: 1.6TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 3GB/s
Speed - Write: 1.9GB/s
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MTFDHAR6T4TCU-1AR1ZABYY Micron Technology Inc. 9200_ssd_product_brief.pdf Description: SSD 6.4TB HHHL TLC NVME 12V
Packaging: Bulk
Size / Dimension: 167.65mm x 68.89mm x 18.74mm
Memory Size: 6.4TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 0.353 oz (10 g)
Operating Temperature: 0°C ~ 55°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: HHHL
Speed - Read: 4.7GB/s
Speed - Write: 2.4GB/s
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MTFDHBE6T4TDG-1AW1ZABYY Micron Technology Inc. Description: SSD 6.4TB 2.5" TLC NVME
Packaging: Tray
Memory Size: 6.4TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 3GB/s
Speed - Write: 1.9GB/s
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MTFDHAR3T2TCU-1AR1ZABYY Micron Technology Inc. 9200_ssd_product_brief.pdf Description: SSD 3.2TB HHHL TLC NVME 12V
Packaging: Bulk
Size / Dimension: 167.65mm x 68.89mm x 18.74mm
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 0.353 oz (10 g)
Operating Temperature: 0°C ~ 55°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: HHHL
Speed - Read: 6GB/s
Speed - Write: 2.4GB/s
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MTEDCBR002SAJ-1M2 Micron Technology Inc. MTEDCxx0xxSAJ.pdf Description: MODULE FLASH NAND SLC 2GB
Packaging: Tray
Package / Case: Module
Memory Size: 2GB
Memory Type: FLASH - NAND (SLC)
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
1+2264.08 грн
10+2050.25 грн
25+1979.11 грн
40+1798.61 грн
В кошику  од. на суму  грн.
MT29F128G08CBCEBJ4-37ITRES:E MT29F128G08CBCEBJ4-37ITRES:E Micron Technology Inc. Description: IC FLASH 128GBIT PAR 132VBGA
Packaging: Tray
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 267 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 16G x 8
DigiKey Programmable: Not Verified
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MT28FW02GBBA1HPC-0AAT TR MT28FW02GBBA1HPC-0AAT TR Micron Technology Inc. Description: IC FLASH 2GBIT PARALLEL 64LBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-LBGA (11x13)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+2226.18 грн
Мінімальне замовлення: 1000
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MT28FW02GBBA1HPC-0AAT TR MT28FW02GBBA1HPC-0AAT TR Micron Technology Inc. Description: IC FLASH 2GBIT PARALLEL 64LBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-LBGA (11x13)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+3149.81 грн
10+2812.99 грн
25+2712.55 грн
50+2482.21 грн
100+2174.98 грн
250+2114.83 грн
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MT40A512M16LY-062E IT:E TR MT40A512M16LY-062E IT:E TR Micron Technology Inc. 8gb_ddr4_sdram.pdf?rev=74679247a1e24e57b6726071152f1384 Description: IC DRAM 8GBIT PARALLEL 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (7.5x13.5)
Memory Interface: Parallel
Memory Organization: 512M x 16
DigiKey Programmable: Not Verified
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MTFDKCC12T8TGQ-1BK1DABYY MTFDKCC12T8TGQ-1BK1DABYY Micron Technology Inc. Description: NAND B58R TLC 1TB 7500 16TBYTE U
Packaging: Tray
Memory Size: 12.8TB
Memory Type: Solid State Drive (SSD) -
Type: NVMe
Speed - Read: 7.0GB/s
Speed - Write: 5.9GB/s
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+228919.43 грн
В кошику  од. на суму  грн.
MTC10F1084S1RC56BD1 Micron Technology Inc. Description: 16GB 2GX80 DDR5 SDRAM MODULE COM
Packaging: Tray
Package / Case: 288-RDIMM
Memory Size: 16GB
Memory Type: DDR5 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 4800
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MT62F2G64D8CL-026 WT:B TR Micron Technology Inc. Description: LPDDR5 128G 2GX64 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 496-BGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.01V ~ 1.12V
Technology: SDRAM - Mobile LPDDR5
Clock Frequency: 3.75 GHz
Memory Format: DRAM
Supplier Device Package: 496-WFBGA
Memory Interface: Parallel
Memory Organization: 2G x 64
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MT62F2G64D8CL-026 WT:B Micron Technology Inc. Description: LPDDR5 128G 2GX64 FBGA
Packaging: Tray
Package / Case: 496-BGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.01V ~ 1.12V
Technology: SDRAM - Mobile LPDDR5
Clock Frequency: 3.75 GHz
Memory Format: DRAM
Supplier Device Package: 496-WFBGA
Memory Interface: Parallel
Memory Organization: 2G x 64
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MT48H4M16LFB4-8 IT MT48H4M16LFB4-8 IT Micron Technology Inc. MT48H4M16LF_RevE.pdf Description: IC DRAM 64MBIT PAR 54VFBGA
Packaging: Tray
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 125 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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MT48H4M16LFF4-8 IT MT48H4M16LFF4-8 IT Micron Technology Inc. MT48H4M16LF_RevE.pdf Description: IC DRAM 64MBIT PAR 54VFBGA
Packaging: Box
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 125 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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MT48H4M16LFB4-8 IT:H MT48H4M16LFB4-8 IT:H Micron Technology Inc. MT48H4M16LF.pdf Description: IC DRAM 64MBIT PAR 54VFBGA
Packaging: Tray
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 125 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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MT48H4M16LFB4-75 IT:H MT48H4M16LFB4-75 IT:H Micron Technology Inc. MT48H4M16LF.pdf Description: IC DRAM 64MBIT PARALLEL 54VFBGA
Packaging: Tray
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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MT53E512M32D1ZW-046 AUT:B MT53E512M32D1ZW-046 AUT:B Micron Technology Inc. Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 303 шт:
термін постачання 21-31 дні (днів)
1+1603.56 грн
10+1430.67 грн
25+1385.35 грн
50+1268.21 грн
100+1236.64 грн
250+1195.61 грн
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MT29F16G08CBACBWP-12:C TR MT29F16G08CBACBWP-12:C TR Micron Technology Inc. Description: IC FLASH 16GBIT PAR 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 83 MHz
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-QC:C TR Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QJ:C Micron Technology Inc. Description: IC FLASH 4TBIT VBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QM:C TR Micron Technology Inc. Description: IC FLASH 4TBIT VBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QB:C Micron Technology Inc. Description: IC FLASH 4TBIT VBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4:C Micron Technology Inc. Description: IC FLASH 4TBIT VBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4:C TR Micron Technology Inc. Description: IC FLASH 4TBIT VBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QJ:C TR Micron Technology Inc. Description: IC FLASH 4TBIT VBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QA:C TR Micron Technology Inc. Description: IC FLASH 4TBIT VBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QM:C Micron Technology Inc. Description: IC FLASH 4TBIT VBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QB:C TR Micron Technology Inc. Description: IC FLASH 4TBIT VBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-M:C Micron Technology Inc. Description: IC FLASH 4TBIT VBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QA:C Micron Technology Inc. Description: IC FLASH 4TBIT VBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GLLCEG7-QB:C Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-M:C TR Micron Technology Inc. Description: IC FLASH 4TBIT VBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GLLCEG7-QB:C TR Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08ELLCHL4-M:C TR Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
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MT29F4T08ELLCHL4-M:C Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Tray
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
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MT29F4T08EMLCHD4-QC:C Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-M:C Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-QA:C Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-M:C TR Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-QA:C TR Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08ELLCHL4-QA:C Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-T:C TR Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08ELLCHL4-QA:C TR Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-R:C Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-R:C TR Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-T:C Micron Technology Inc. Description: IC FLASH 4TBIT FBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EULKEM4-M:K TR Micron Technology Inc. Description: IC FLASH 4TBIT LBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
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MT29F4T08EULKEM4-M:K Micron Technology Inc. Description: IC FLASH 4TBIT LBGA
Packaging: Tray
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
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MT29F4T08EULCEM4-QJ:C TR Micron Technology Inc. Description: IC FLASH 4TBIT LBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EULEEM4-T:E TR Micron Technology Inc. Description: IC FLASH 4TBIT LBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-BGA
Mounting Type: Surface Mount
Memory Size: 4Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.6V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-LBGA (12x18)
Memory Interface: Parallel
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT48LC4M16A2P-6A:J TR 64mb-x4x8x16-sdram.pdf
MT48LC4M16A2P-6A:J TR
Виробник: Micron Technology Inc.
Description: IC DRAM 64MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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MT48LC4M16A2P-6A:J TR 64mb-x4x8x16-sdram.pdf
MT48LC4M16A2P-6A:J TR
Виробник: Micron Technology Inc.
Description: IC DRAM 64MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
на замовлення 385 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+413.03 грн
10+353.13 грн
25+336.82 грн
50+304.96 грн
100+294.20 грн
250+280.55 грн
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MT48LC4M16A2P-6A IT:J TR 64mb-x4x8x16-sdram.pdf
MT48LC4M16A2P-6A IT:J TR
Виробник: Micron Technology Inc.
Description: IC DRAM 64MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
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MT48LC4M16A2P-6A IT:J TR 64mb-x4x8x16-sdram.pdf
MT48LC4M16A2P-6A IT:J TR
Виробник: Micron Technology Inc.
Description: IC DRAM 64MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
на замовлення 1555 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+453.61 грн
10+388.30 грн
25+370.35 грн
50+335.34 грн
100+323.51 грн
250+308.50 грн
500+292.71 грн
1000+282.33 грн
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MTFDDAK3T8TGB-1BC1ZABYY micron-5400-ssd-part-catalog-final-final-wo-mc.pdf
Виробник: Micron Technology Inc.
Description: 5300 3840GB 2.5IN SSD
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 7.00mm
Memory Size: 3.84TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 2.47 oz (70.38 g)
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 540MB/s
Speed - Write: 520MB/s
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MTFDDAK3T8TGB-1BC1ZABYY TR micron-5400-ssd-part-catalog-final-final-wo-mc.pdf
Виробник: Micron Technology Inc.
Description: SSD 5300 3840GB 2.5IN
Packaging: Tape & Reel (TR)
Size / Dimension: 100.45mm x 69.85mm x 7.00mm
Memory Size: 3.84TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 2.47 oz (70.38 g)
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 540MB/s
Speed - Write: 520MB/s
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MT53D384M64D4KA-046 XT ES:E TR
Виробник: Micron Technology Inc.
Description: IC DRAM 24GBIT 2.133GHZ FBGA
Packaging: Tape & Reel (TR)
Memory Size: 24Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 105°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Memory Organization: 384M x 64
DigiKey Programmable: Not Verified
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MTFDHAR8TATCW-1AR1ZABYY 9200_ssd_product_brief.pdf
Виробник: Micron Technology Inc.
Description: SSD 8TB HHHL TLC NVME 12V
Packaging: Bulk
Size / Dimension: 167.65mm x 68.89mm x 18.74mm
Memory Size: 8TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 0.353 oz (10 g)
Operating Temperature: 0°C ~ 55°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: HHHL
Speed - Read: 4.7GB/s
Speed - Write: 2.4GB/s
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MTFDHBE800TDG-1AW1ZABYY
Виробник: Micron Technology Inc.
Description: SSD 800GB 2.5" TLC NVME
Packaging: Tray
Memory Size: 800GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 2.4GB/s
Speed - Write: 700MB/s
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MTFDHBE1T6TDG-1AW1ZABYY
Виробник: Micron Technology Inc.
Description: SSD 1.6TB 2.5" TLC NVME
Packaging: Tray
Memory Size: 1.6TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 3GB/s
Speed - Write: 1.9GB/s
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MTFDHAR6T4TCU-1AR1ZABYY 9200_ssd_product_brief.pdf
Виробник: Micron Technology Inc.
Description: SSD 6.4TB HHHL TLC NVME 12V
Packaging: Bulk
Size / Dimension: 167.65mm x 68.89mm x 18.74mm
Memory Size: 6.4TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 0.353 oz (10 g)
Operating Temperature: 0°C ~ 55°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: HHHL
Speed - Read: 4.7GB/s
Speed - Write: 2.4GB/s
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MTFDHBE6T4TDG-1AW1ZABYY
Виробник: Micron Technology Inc.
Description: SSD 6.4TB 2.5" TLC NVME
Packaging: Tray
Memory Size: 6.4TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 3GB/s
Speed - Write: 1.9GB/s
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MTFDHAR3T2TCU-1AR1ZABYY 9200_ssd_product_brief.pdf
Виробник: Micron Technology Inc.
Description: SSD 3.2TB HHHL TLC NVME 12V
Packaging: Bulk
Size / Dimension: 167.65mm x 68.89mm x 18.74mm
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Weight: 0.353 oz (10 g)
Operating Temperature: 0°C ~ 55°C
Voltage - Supply: 12V
Current - Max: 2.5A
Form Factor: HHHL
Speed - Read: 6GB/s
Speed - Write: 2.4GB/s
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MTEDCBR002SAJ-1M2 MTEDCxx0xxSAJ.pdf
Виробник: Micron Technology Inc.
Description: MODULE FLASH NAND SLC 2GB
Packaging: Tray
Package / Case: Module
Memory Size: 2GB
Memory Type: FLASH - NAND (SLC)
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2264.08 грн
10+2050.25 грн
25+1979.11 грн
40+1798.61 грн
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MT29F128G08CBCEBJ4-37ITRES:E
MT29F128G08CBCEBJ4-37ITRES:E
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT PAR 132VBGA
Packaging: Tray
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 267 MHz
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 16G x 8
DigiKey Programmable: Not Verified
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MT28FW02GBBA1HPC-0AAT TR
MT28FW02GBBA1HPC-0AAT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 64LBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-LBGA (11x13)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+2226.18 грн
Мінімальне замовлення: 1000
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MT28FW02GBBA1HPC-0AAT TR
MT28FW02GBBA1HPC-0AAT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 64LBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-LBGA (11x13)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3149.81 грн
10+2812.99 грн
25+2712.55 грн
50+2482.21 грн
100+2174.98 грн
250+2114.83 грн
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MT40A512M16LY-062E IT:E TR 8gb_ddr4_sdram.pdf?rev=74679247a1e24e57b6726071152f1384
MT40A512M16LY-062E IT:E TR
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (7.5x13.5)
Memory Interface: Parallel
Memory Organization: 512M x 16
DigiKey Programmable: Not Verified
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MTFDKCC12T8TGQ-1BK1DABYY
MTFDKCC12T8TGQ-1BK1DABYY
Виробник: Micron Technology Inc.
Description: NAND B58R TLC 1TB 7500 16TBYTE U
Packaging: Tray
Memory Size: 12.8TB
Memory Type: Solid State Drive (SSD) -
Type: NVMe
Speed - Read: 7.0GB/s
Speed - Write: 5.9GB/s
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+228919.43 грн
В кошику  од. на суму  грн.
MTC10F1084S1RC56BD1
Виробник: Micron Technology Inc.
Description: 16GB 2GX80 DDR5 SDRAM MODULE COM
Packaging: Tray
Package / Case: 288-RDIMM
Memory Size: 16GB
Memory Type: DDR5 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 4800
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MT62F2G64D8CL-026 WT:B TR
Виробник: Micron Technology Inc.
Description: LPDDR5 128G 2GX64 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 496-BGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.01V ~ 1.12V
Technology: SDRAM - Mobile LPDDR5
Clock Frequency: 3.75 GHz
Memory Format: DRAM
Supplier Device Package: 496-WFBGA
Memory Interface: Parallel
Memory Organization: 2G x 64
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MT62F2G64D8CL-026 WT:B
Виробник: Micron Technology Inc.
Description: LPDDR5 128G 2GX64 FBGA
Packaging: Tray
Package / Case: 496-BGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.01V ~ 1.12V
Technology: SDRAM - Mobile LPDDR5
Clock Frequency: 3.75 GHz
Memory Format: DRAM
Supplier Device Package: 496-WFBGA
Memory Interface: Parallel
Memory Organization: 2G x 64
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MT48H4M16LFB4-8 IT MT48H4M16LF_RevE.pdf
MT48H4M16LFB4-8 IT
Виробник: Micron Technology Inc.
Description: IC DRAM 64MBIT PAR 54VFBGA
Packaging: Tray
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 125 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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MT48H4M16LFF4-8 IT MT48H4M16LF_RevE.pdf
MT48H4M16LFF4-8 IT
Виробник: Micron Technology Inc.
Description: IC DRAM 64MBIT PAR 54VFBGA
Packaging: Box
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 125 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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MT48H4M16LFB4-8 IT:H MT48H4M16LF.pdf
MT48H4M16LFB4-8 IT:H
Виробник: Micron Technology Inc.
Description: IC DRAM 64MBIT PAR 54VFBGA
Packaging: Tray
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 125 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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MT48H4M16LFB4-75 IT:H MT48H4M16LF.pdf
MT48H4M16LFB4-75 IT:H
Виробник: Micron Technology Inc.
Description: IC DRAM 64MBIT PARALLEL 54VFBGA
Packaging: Tray
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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MT53E512M32D1ZW-046 AUT:B
MT53E512M32D1ZW-046 AUT:B
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 303 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1603.56 грн
10+1430.67 грн
25+1385.35 грн
50+1268.21 грн
100+1236.64 грн
250+1195.61 грн
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MT29F16G08CBACBWP-12:C TR
MT29F16G08CBACBWP-12:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 16GBIT PAR 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 83 MHz
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 2G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-QC:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QJ:C
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT VBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QM:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT VBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QB:C
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT VBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4:C
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT VBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT VBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QJ:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT VBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QA:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT VBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QM:C
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT VBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QB:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT VBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-M:C
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT VBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-QA:C
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT VBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GLLCEG7-QB:C
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GMLCEJ4-M:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT VBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08GLLCEG7-QB:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08ELLCHL4-M:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
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MT29F4T08ELLCHL4-M:C
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Tray
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
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MT29F4T08EMLCHD4-QC:C
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-M:C
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-QA:C
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-M:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT29F4T08EMLCHD4-QA:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
MT29F4T08ELLCHL4-QA:C
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-T:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08ELLCHL4-QA:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-R:C
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-R:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EMLCHD4-T:C
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT FBGA
Packaging: Box
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EULKEM4-M:K TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT LBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
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MT29F4T08EULKEM4-M:K
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT LBGA
Packaging: Tray
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
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MT29F4T08EULCEM4-QJ:C TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT LBGA
Packaging: Tape & Reel (TR)
Memory Size: 4Tbit
Memory Format: FLASH
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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MT29F4T08EULEEM4-T:E TR
Виробник: Micron Technology Inc.
Description: IC FLASH 4TBIT LBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-BGA
Mounting Type: Surface Mount
Memory Size: 4Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.6V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-LBGA (12x18)
Memory Interface: Parallel
Memory Organization: 512G x 8
DigiKey Programmable: Not Verified
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