Результат пошуку "DACMI80N1200DCO" : 3
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DACMI80N1200 | DACO Semiconductor |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 50A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 34mΩ Pulsed drain current: 250A Power dissipation: 460W Technology: SiC Gate-source voltage: -10...20V Operating temperature: -55...150°C Mechanical mounting: screw |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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DACMI80N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 50A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 34mΩ Pulsed drain current: 250A Power dissipation: 460W Technology: SiC Gate-source voltage: -10...20V Operating temperature: -55...150°C Mechanical mounting: screw кількість в упаковці: 1 шт |
на замовлення 4 шт: термін постачання 7-14 дні (днів) |
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| DACMI80N1200 |
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Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5209.13 грн |
| DACMI80N1200 |
|
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6250.96 грн |