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BXW03C75
на замовлення 1500 шт:
термін постачання 14-28 дні (днів)
BXW10M1K2HBRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W
Technology: SiC
Case: TO247-3
Mounting: THT
On-state resistance: 610mΩ
Kind of package: tube
Power dissipation: 80.6W
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: -3...20V
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Drain current: 10A
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
BXW10M1K2HBRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W
Technology: SiC
Case: TO247-3
Mounting: THT
On-state resistance: 610mΩ
Kind of package: tube
Power dissipation: 80.6W
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: -3...20V
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Drain current: 10A
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
BXW18M1K2HBRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 72A; 96.9W
Technology: SiC
Case: TO247-3
Mounting: THT
On-state resistance: 345mΩ
Kind of package: tube
Power dissipation: 96.9W
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: -3...20V
Pulsed drain current: 72A
Drain-source voltage: 1.2kV
Drain current: 18A
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
BXW18M1K2HBRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 72A; 96.9W
Technology: SiC
Case: TO247-3
Mounting: THT
On-state resistance: 345mΩ
Kind of package: tube
Power dissipation: 96.9W
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: -3...20V
Pulsed drain current: 72A
Drain-source voltage: 1.2kV
Drain current: 18A
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 100 шт
товар відсутній
BXW3M1K7HBRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 12A; 69W
Technology: SiC
Case: TO247-3
Mounting: THT
On-state resistance: 1.69Ω
Kind of package: tube
Power dissipation: 69W
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: -3...20V
Pulsed drain current: 12A
Drain-source voltage: 1.7kV
Drain current: 3A
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
BXW3M1K7HBRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 12A; 69W
Technology: SiC
Case: TO247-3
Mounting: THT
On-state resistance: 1.69Ω
Kind of package: tube
Power dissipation: 69W
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: -3...20V
Pulsed drain current: 12A
Drain-source voltage: 1.7kV
Drain current: 3A
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
BXW60M1K2JBRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W
Technology: SiC
Case: TO247-4
Mounting: THT
On-state resistance: 80mΩ
Kind of package: tube
Power dissipation: 271.7W
Features of semiconductor devices: Kelvin terminal
Gate charge: 170nC
Kind of channel: enhanced
Gate-source voltage: -3...18V
Pulsed drain current: 240A
Drain-source voltage: 1.2kV
Drain current: 60A
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
BXW60M1K2JBRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W
Technology: SiC
Case: TO247-4
Mounting: THT
On-state resistance: 80mΩ
Kind of package: tube
Power dissipation: 271.7W
Features of semiconductor devices: Kelvin terminal
Gate charge: 170nC
Kind of channel: enhanced
Gate-source voltage: -3...18V
Pulsed drain current: 240A
Drain-source voltage: 1.2kV
Drain current: 60A
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній