Продукція > DIJ
| Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|
| DIJ006N90 | DIOTEC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 37.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Pulsed drain current: 16A Power dissipation: 37.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD | товару немає в наявності | В кошику од. на суму грн. |
| DIJ2A3N65 | Diotec Semiconductor | Description: MOSFET ITO-220AB N 650V 2.3A Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. |
| DIJ2A3N65 | Diotec Semiconductor | MOSFET MOSFET, ITO-220AB, 650V, 2.3A, 150C, N | товару немає в наявності | В кошику од. на суму грн. |
| DIJ2A3N65 | DIOTEC SEMICONDUCTOR | DIJ2A3N65-DIO THT N channel transistors | товару немає в наявності | В кошику од. на суму грн. |
| DIJ4A5N65 | DIOTEC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.7A; Idm: 28A; 46W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220FP On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 22nC Gate-source voltage: ±30V Pulsed drain current: 28A Drain current: 2.7A Power dissipation: 46W | товару немає в наявності | В кошику од. на суму грн. |
| DIJ4A5N65 | DIOTEC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.7A; Idm: 28A; 46W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220FP On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 22nC Gate-source voltage: ±30V Pulsed drain current: 28A Drain current: 2.7A Power dissipation: 46W кількість в упаковці: 1 шт | товару немає в наявності | В кошику од. на суму грн. |
| DIJ4A5N65 | Diotec Semiconductor | Description: MOSFET ITO-220AB N 650V 4.5A Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. |