DIJ2A3N65 Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET ITO-220AB N 650V 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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Технічний опис DIJ2A3N65 Diotec Semiconductor
Description: MOSFET ITO-220AB N 650V 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ITO-220F, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.
Інші пропозиції DIJ2A3N65
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DIJ2A3N65 | Виробник : Diotec Semiconductor |
MOSFET MOSFET, ITO-220AB, 650V, 2.3A, 150C, N |
товару немає в наявності |