Продукція > G7P
| Назва | Виробник | Інформація | Доступність | Ціна | ||||||||
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| G7P-2-DC24 | Omron Electronics Inc-EMC Div | Description: RELAY GEN PURPOSE DPDT 10A 24V | товару немає в наявності | В кошику од. на суму грн. | ||||||||
| G7P03D2 | Goford Semiconductor | Description: P-30V,-7A,RD(MAX)<20.5M@-10V,VTH Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 1A, 10V Power Dissipation (Max): 1.3W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||
| G7P03L | Goford Semiconductor | Description: P30V,RD(MAX)<23M@-10V,RD(MAX)<34 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 10V Power Dissipation (Max): 1.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| G7P03L | Goford Semiconductor | Description: P30V,RD(MAX)<23M@-10V,RD(MAX)<34 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 10V Power Dissipation (Max): 1.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V | на замовлення 969 шт: термін постачання 21-31 дні (днів) |
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| G7P03L | GOFORD Semiconductor | P-Channel Enhancement Mode Power MOSFET | на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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| G7P03S | Goford Semiconductor | Description: MOSFET P-CH 30V 9A SOP-8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V FET Feature: Standard Power Dissipation (Max): 2.7W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1253 pF @ 15 V | на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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| G7P03S | GOFORD Semiconductor | P-Channel Trench MOSFET | на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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