Продукція > YJ2
| Назва | Виробник | Інформація | Доступність | Ціна | ||||||||||
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| YJ2-25.5-2.5AU | Weipu Connector | Description: 13-18 AWG Crimp Contact Packaging: Bulk Contact Finish: Gold Contact Termination: Crimp Type: Machined Contact Type: Pin Contact Size: 2.0mm Wire Gauge or Range - AWG: 13-18 AWG Wire Gauge or Range - mm²: 1.0 ~ 2.5mm² Contact Material: Brass | на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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| YJ2N60CP | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| YJ2N65CI | YANGJIE TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 23W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| YJ2N65CP | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| YJ2N65CZ | YANGJIE TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 54W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: max. 1.33mm | товару немає в наявності | В кошику од. на суму грн. |