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Виробник: NoMIS Power
Description: 1700 V 1000 m SiC MOSFET TO-247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 20V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 1000 V

Виробник: NoMIS Power
Description: 3300 V 80 mOhm SiC MOSFET TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 20V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 3V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -5V
Drain to Source Voltage (Vdss): 3300 V