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BFR30,215 BFR30,215 NXP USA Inc. BFR30%2C31.pdf Description: JFET N-CH 10MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 5 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 10 V
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BFR31,215 BFR31,215 NXP USA Inc. BFR30%2C31.pdf Description: JFET N-CH 10MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-23 (TO-236AB)
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 10 V
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BFT46,215 BFT46,215 NXP USA Inc. BFT46.pdf Description: JFET N-CH 10MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 1.2 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
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BUK100-50GL,127 BUK100-50GL,127 NXP USA Inc. BUK100-50GL_1.pdf Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 13.5A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Over Temperature, Over Voltage
Part Status: Obsolete
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BUK101-50GL,127 BUK101-50GL,127 NXP USA Inc. Description: IC PWR TOPFET LOGIC LVL TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 26A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Over Temperature, Over Voltage
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BUK114-50L,118 BUK114-50L,118 NXP USA Inc. BUK114-50L%2CS.pdf Description: IC PWR DRIVER N-CHAN 1:1 SOT426
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 5V
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Over Temperature, Over Voltage
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BUK116-50L,118 BUK116-50L,118 NXP USA Inc. BUK116-50L%2CS.pdf Description: IC PWR DRIVER N-CHAN 1:1 SOT426
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 22mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 5V
Current - Output (Max): 50A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Over Temperature, Over Voltage
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BUK124-50L,127 BUK124-50L,127 NXP USA Inc. BUK124-50L.pdf Description: IC PWR DRVR N-CH 1:1 SOT263B-01
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BUK125-50L,127 BUK125-50L,127 NXP USA Inc. BUK125-50L.pdf Description: IC PWR DRVR N-CH 1:1 SOT263B-01
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BUK127-50GT,115 BUK127-50GT,115 NXP USA Inc. BUK127-50GT.pdf Description: IC PWR DRIVER N-CHAN 1:1 SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-73
Fault Protection: Over Temperature, Over Voltage
Part Status: Obsolete
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BUK136-50L,118 BUK136-50L,118 NXP USA Inc. BUK136-50L.pdf Description: TOPFET LOGIC LVL 50V D2PAK
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BUK1M200-50SDLD,11 BUK1M200-50SDLD,11 NXP USA Inc. BUK1M200-50SDLD.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 800mA
Ratio - Input:Output: 1:1
Supplier Device Package: 20-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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BUK1M200-50SGTD,11 BUK1M200-50SGTD,11 NXP USA Inc. BUK1M200-50SGTD.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.7A
Ratio - Input:Output: 1:1
Supplier Device Package: 20-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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PIP3103-T,115 PIP3103-T,115 NXP USA Inc. PIP3103-T.pdf Description: IC PWR DRIVER N-CHAN 1:1 SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-73
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3104-P,127 PIP3104-P,127 NXP USA Inc. PIP3104-P.pdf Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 68mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3105-P,127 PIP3105-P,127 NXP USA Inc. PIP3105-P.pdf Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 36mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 16A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3107-D,118 PIP3107-D,118 NXP USA Inc. PIP3107-D.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
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PIP3115-B,118 PIP3115-B,118 NXP USA Inc. PIP3115-B.pdf Description: IC PWR DRIVER N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 68mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3119-P,127 PIP3119-P,127 NXP USA Inc. PIP3119-P.pdf Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 22mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3201-A,127 PIP3201-A,127 NXP USA Inc. PIP3201-A.pdf Description: IC PWR DRVR N-CH 1:1 SOT263B-01
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT263B-01
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3207-DC,118 PIP3207-DC,118 NXP USA Inc. PIP3207-DC.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 16A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK-7
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3208-A,127 PIP3208-A,127 NXP USA Inc. PIP3208-A.pdf Description: IC PWR SWITCH N-CH 1:1 SOT263B
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 135mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT263B-01
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3209-R,118 PIP3209-R,118 NXP USA Inc. PIP3209-R.pdf Description: IC PWR SWITCH N-CHAN 1:1 SOT426
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 135mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3210-R,118 PIP3210-R,118 NXP USA Inc. PIP3210-R.pdf Description: IC PWR SWITCH N-CHAN 1:1 SOT426
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PMBFJ177,215 PMBFJ177,215 NXP USA Inc. PMBFJ174_175_176_177_CNV.pdf Description: JFET P-CH 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 300 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
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PDTC144WS,126 PDTC144WS,126 NXP USA Inc. PDTC144W_SERIES.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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PDTD113EK,115 PDTD113EK,115 NXP USA Inc. PDTD113E_SER.pdf Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
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PDTD113ZK,115 PDTD113ZK,115 NXP USA Inc. PDTD113ZT.pdf Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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PDTD123EK,115 PDTD123EK,115 NXP USA Inc. PDTD123E_SER.pdf Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
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PDTD123YK,115 PDTD123YK,115 NXP USA Inc. PDTD123Y_SER.pdf Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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BC327-25,112 BC327-25,112 NXP USA Inc. BC807%28W%29_BC327_Rev_Feb2017.pdf Description: TRANS PNP 45V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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BC327-40,112 BC327-40,112 NXP USA Inc. BC807%28W%29_BC327_Rev_Feb2017.pdf Description: TRANS PNP 45V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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BC546B,126 BC546B,126 NXP USA Inc. BC846_Series.pdf Description: TRANS NPN 65V 0.1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
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BC557C,112 BC557C,112 NXP USA Inc. BC556%2CBC557.pdf Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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PN2369A,126 PN2369A,126 NXP USA Inc. PN2369A.pdf Description: TRANS NPN 15V 0.2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV
Frequency - Transition: 500MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
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BFG198,115 BFG198,115 NXP USA Inc. BFG198_Rev_Oct2010.pdf Description: RF TRANS NPN 10V 8GHZ SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 8GHz
Supplier Device Package: SC-73
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BFG520,215 BFG520,215 NXP USA Inc. BFG520%28X%2CXR%29_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
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BFG540,215 BFG540,215 NXP USA Inc. BFG540_X_XR_Rev5.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
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BFG67,215 BFG67,215 NXP USA Inc. BFG67_X_XR_Rev5.pdf Description: RF TRANS NPN 10V 8GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
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BFG67/X,215 BFG67/X,215 NXP USA Inc. BFG67_X_XR_Rev5.pdf Description: RF TRANS NPN 10V 8GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB @ 1GHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
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BFM505,115 BFM505,115 NXP USA Inc. BFM505_Rev_Oct2010.pdf Description: RF TRANS 2 NPN 8V 9GHZ 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 18mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.9dB @ 900MHz ~ 2GHz
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
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BFQ19,115 BFQ19,115 NXP USA Inc. BFQ19_Rev3.pdf Description: RF TRANS NPN 15V 5.5GHZ SOT-89 3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3.3dB @ 500MHz
Supplier Device Package: SOT-89-3
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BFQ540,115 BFQ540,115 NXP USA Inc. BFQ540_Rev5.pdf Description: RF TRANS NPN 15V 9GHZ SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-89-3
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BFR505T,115 BFR505T,115 NXP USA Inc. BFR505T_Rev_Oct2010.pdf Description: RF TRANS NPN 15V 9GHZ SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 18mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Supplier Device Package: SC-75
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BFR520T,115 BFR520T,115 NXP USA Inc. BFR520T_Rev_Oct2010.pdf Description: RF TRANS NPN 15V 9GHZ SC-75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SC-75
Part Status: Obsolete
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BLF1820-90,112 BLF1820-90,112 NXP USA Inc. BLF1820-90_2.pdf Description: TRANSISTOR RF LDMOS SOT502A
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BLS2731-10,114 BLS2731-10,114 NXP USA Inc. BLS2731-10.pdf Description: RF TRANS NPN 75V 3.1GHZ CDFM2
Packaging: Tray
Package / Case: SOT-445C
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 145W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Frequency - Transition: 3.1GHz
Supplier Device Package: CDFM2
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BLS3135-10,114 BLS3135-10,114 NXP USA Inc. BLS3135-10_1.pdf Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-445C
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 9dB
Power - Max: 34W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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BLS3135-20,114 BLS3135-20,114 NXP USA Inc. BLS3135-20_1.pdf Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8dB
Power - Max: 80W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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BLS3135-50,114 BLS3135-50,114 NXP USA Inc. BLS3135-50_3.pdf Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8dB
Power - Max: 80W
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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BLS3135-65,114 BLS3135-65,114 NXP USA Inc. BLS3135-65_2.pdf Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 7dB
Power - Max: 200W
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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PRF947,115 PRF947,115 NXP USA Inc. PRF947.pdf Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BF1204,115 BF1204,115 NXP USA Inc. BF1204_Rev_Sept2010.pdf Description: FET RF 10V 400MHZ 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1205C,115 BF1205C,115 NXP USA Inc. BF1205C.pdf Description: RF MOSFET 5V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
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BSH205,215 BSH205,215 NXP USA Inc. BSH205.pdf Description: MOSFET P-CH 12V 750MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V
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PH3075L,115 PH3075L,115 NXP USA Inc. Description: MOSFET N-CH 75V 30A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 25 V
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PH3330L,115 PH3330L,115 NXP USA Inc. Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 12 V
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PH3855L,115 PH3855L,115 NXP USA Inc. PH3855L.pdf Description: MOSFET N-CH 55V 24A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 25 V
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PH8030L,115 PH8030L,115 NXP USA Inc. PH8030L.pdf Description: MOSFET N-CH 30V 76.7A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 12 V
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PHB108NQ03LT,118 PHB108NQ03LT,118 NXP USA Inc. PHB_PHD_PHU108NQ03LT_3.pdf Description: MOSFET N-CH 25V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
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BFR30,215 BFR30%2C31.pdf
BFR30,215
Виробник: NXP USA Inc.
Description: JFET N-CH 10MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 5 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 10 V
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BFR31,215 BFR30%2C31.pdf
BFR31,215
Виробник: NXP USA Inc.
Description: JFET N-CH 10MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-23 (TO-236AB)
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 10 V
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BFT46,215 BFT46.pdf
BFT46,215
Виробник: NXP USA Inc.
Description: JFET N-CH 10MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 1.2 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
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BUK100-50GL,127 BUK100-50GL_1.pdf
BUK100-50GL,127
Виробник: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 13.5A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Over Temperature, Over Voltage
Part Status: Obsolete
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BUK101-50GL,127
BUK101-50GL,127
Виробник: NXP USA Inc.
Description: IC PWR TOPFET LOGIC LVL TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 26A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Over Temperature, Over Voltage
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BUK114-50L,118 BUK114-50L%2CS.pdf
BUK114-50L,118
Виробник: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 SOT426
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 5V
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Over Temperature, Over Voltage
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BUK116-50L,118 BUK116-50L%2CS.pdf
BUK116-50L,118
Виробник: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 SOT426
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 22mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 5V
Current - Output (Max): 50A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Over Temperature, Over Voltage
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BUK124-50L,127 BUK124-50L.pdf
BUK124-50L,127
Виробник: NXP USA Inc.
Description: IC PWR DRVR N-CH 1:1 SOT263B-01
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BUK125-50L,127 BUK125-50L.pdf
BUK125-50L,127
Виробник: NXP USA Inc.
Description: IC PWR DRVR N-CH 1:1 SOT263B-01
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BUK127-50GT,115 BUK127-50GT.pdf
BUK127-50GT,115
Виробник: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-73
Fault Protection: Over Temperature, Over Voltage
Part Status: Obsolete
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BUK136-50L,118 BUK136-50L.pdf
BUK136-50L,118
Виробник: NXP USA Inc.
Description: TOPFET LOGIC LVL 50V D2PAK
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BUK1M200-50SDLD,11 BUK1M200-50SDLD.pdf
BUK1M200-50SDLD,11
Виробник: NXP USA Inc.
Description: IC PWR DRIVER N-CHANNEL 1:1 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 800mA
Ratio - Input:Output: 1:1
Supplier Device Package: 20-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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BUK1M200-50SGTD,11 BUK1M200-50SGTD.pdf
BUK1M200-50SGTD,11
Виробник: NXP USA Inc.
Description: IC PWR DRIVER N-CHANNEL 1:1 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.7A
Ratio - Input:Output: 1:1
Supplier Device Package: 20-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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PIP3103-T,115 PIP3103-T.pdf
PIP3103-T,115
Виробник: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-73
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3104-P,127 PIP3104-P.pdf
PIP3104-P,127
Виробник: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 68mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3105-P,127 PIP3105-P.pdf
PIP3105-P,127
Виробник: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 36mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 16A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3107-D,118 PIP3107-D.pdf
PIP3107-D,118
Виробник: NXP USA Inc.
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
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PIP3115-B,118 PIP3115-B.pdf
PIP3115-B,118
Виробник: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 68mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3119-P,127 PIP3119-P.pdf
PIP3119-P,127
Виробник: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 22mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3201-A,127 PIP3201-A.pdf
PIP3201-A,127
Виробник: NXP USA Inc.
Description: IC PWR DRVR N-CH 1:1 SOT263B-01
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT263B-01
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3207-DC,118 PIP3207-DC.pdf
PIP3207-DC,118
Виробник: NXP USA Inc.
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 16A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK-7
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3208-A,127 PIP3208-A.pdf
PIP3208-A,127
Виробник: NXP USA Inc.
Description: IC PWR SWITCH N-CH 1:1 SOT263B
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 135mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT263B-01
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3209-R,118 PIP3209-R.pdf
PIP3209-R,118
Виробник: NXP USA Inc.
Description: IC PWR SWITCH N-CHAN 1:1 SOT426
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 135mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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PIP3210-R,118 PIP3210-R.pdf
PIP3210-R,118
Виробник: NXP USA Inc.
Description: IC PWR SWITCH N-CHAN 1:1 SOT426
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PMBFJ177,215 PMBFJ174_175_176_177_CNV.pdf
PMBFJ177,215
Виробник: NXP USA Inc.
Description: JFET P-CH 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 300 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
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PDTC144WS,126 PDTC144W_SERIES.pdf
PDTC144WS,126
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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PDTD113EK,115 PDTD113E_SER.pdf
PDTD113EK,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
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PDTD113ZK,115 PDTD113ZT.pdf
PDTD113ZK,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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PDTD123EK,115 PDTD123E_SER.pdf
PDTD123EK,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
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PDTD123YK,115 PDTD123Y_SER.pdf
PDTD123YK,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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BC327-25,112 BC807%28W%29_BC327_Rev_Feb2017.pdf
BC327-25,112
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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BC327-40,112 BC807%28W%29_BC327_Rev_Feb2017.pdf
BC327-40,112
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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BC546B,126 BC846_Series.pdf
BC546B,126
Виробник: NXP USA Inc.
Description: TRANS NPN 65V 0.1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
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BC557C,112 BC556%2CBC557.pdf
BC557C,112
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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PN2369A,126 PN2369A.pdf
PN2369A,126
Виробник: NXP USA Inc.
Description: TRANS NPN 15V 0.2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV
Frequency - Transition: 500MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
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BFG198,115 BFG198_Rev_Oct2010.pdf
BFG198,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8GHZ SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 8GHz
Supplier Device Package: SC-73
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BFG520,215 BFG520%28X%2CXR%29_Rev4.pdf
BFG520,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
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BFG540,215 BFG540_X_XR_Rev5.pdf
BFG540,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
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BFG67,215 BFG67_X_XR_Rev5.pdf
BFG67,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
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BFG67/X,215 BFG67_X_XR_Rev5.pdf
BFG67/X,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB @ 1GHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
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BFM505,115 BFM505_Rev_Oct2010.pdf
BFM505,115
Виробник: NXP USA Inc.
Description: RF TRANS 2 NPN 8V 9GHZ 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 18mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.9dB @ 900MHz ~ 2GHz
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
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BFQ19,115 BFQ19_Rev3.pdf
BFQ19,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 5.5GHZ SOT-89 3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3.3dB @ 500MHz
Supplier Device Package: SOT-89-3
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BFQ540,115 BFQ540_Rev5.pdf
BFQ540,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-89-3
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BFR505T,115 BFR505T_Rev_Oct2010.pdf
BFR505T,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 18mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Supplier Device Package: SC-75
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BFR520T,115 BFR520T_Rev_Oct2010.pdf
BFR520T,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SC-75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SC-75
Part Status: Obsolete
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BLF1820-90,112 BLF1820-90_2.pdf
BLF1820-90,112
Виробник: NXP USA Inc.
Description: TRANSISTOR RF LDMOS SOT502A
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BLS2731-10,114 BLS2731-10.pdf
BLS2731-10,114
Виробник: NXP USA Inc.
Description: RF TRANS NPN 75V 3.1GHZ CDFM2
Packaging: Tray
Package / Case: SOT-445C
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 145W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Frequency - Transition: 3.1GHz
Supplier Device Package: CDFM2
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BLS3135-10,114 BLS3135-10_1.pdf
BLS3135-10,114
Виробник: NXP USA Inc.
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-445C
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 9dB
Power - Max: 34W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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BLS3135-20,114 BLS3135-20_1.pdf
BLS3135-20,114
Виробник: NXP USA Inc.
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8dB
Power - Max: 80W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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BLS3135-50,114 BLS3135-50_3.pdf
BLS3135-50,114
Виробник: NXP USA Inc.
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8dB
Power - Max: 80W
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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BLS3135-65,114 BLS3135-65_2.pdf
BLS3135-65,114
Виробник: NXP USA Inc.
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 7dB
Power - Max: 200W
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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PRF947,115 PRF947.pdf
PRF947,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BF1204,115 BF1204_Rev_Sept2010.pdf
BF1204,115
Виробник: NXP USA Inc.
Description: FET RF 10V 400MHZ 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1205C,115 BF1205C.pdf
BF1205C,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
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BSH205,215 BSH205.pdf
BSH205,215
Виробник: NXP USA Inc.
Description: MOSFET P-CH 12V 750MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V
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PH3075L,115
PH3075L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 30A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 25 V
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PH3330L,115
PH3330L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 12 V
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PH3855L,115 PH3855L.pdf
PH3855L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 24A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 25 V
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PH8030L,115 PH8030L.pdf
PH8030L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 76.7A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 12 V
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PHB108NQ03LT,118 PHB_PHD_PHU108NQ03LT_3.pdf
PHB108NQ03LT,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
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