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BLS2731-10,114 BLS2731-10,114 NXP USA Inc. BLS2731-10.pdf Description: RF TRANS NPN 75V 3.1GHZ CDFM2
Packaging: Tray
Package / Case: SOT-445C
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 145W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Frequency - Transition: 3.1GHz
Supplier Device Package: CDFM2
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BLS3135-10,114 BLS3135-10,114 NXP USA Inc. BLS3135-10_1.pdf Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-445C
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 9dB
Power - Max: 34W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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BLS3135-20,114 BLS3135-20,114 NXP USA Inc. BLS3135-20_1.pdf Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8dB
Power - Max: 80W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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BLS3135-50,114 BLS3135-50,114 NXP USA Inc. BLS3135-50_3.pdf Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8dB
Power - Max: 80W
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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BLS3135-65,114 BLS3135-65,114 NXP USA Inc. BLS3135-65_2.pdf Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 7dB
Power - Max: 200W
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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PRF947,115 PRF947,115 NXP USA Inc. PRF947.pdf Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BF1204,115 BF1204,115 NXP USA Inc. BF1204_Rev_Sept2010.pdf Description: FET RF 10V 400MHZ 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1205C,115 BF1205C,115 NXP USA Inc. BF1205C.pdf Description: RF MOSFET 5V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
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BSH205,215 BSH205,215 NXP USA Inc. BSH205.pdf Description: MOSFET P-CH 12V 750MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V
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PH3075L,115 PH3075L,115 NXP USA Inc. Description: MOSFET N-CH 75V 30A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 25 V
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PH3330L,115 PH3330L,115 NXP USA Inc. Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 12 V
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PH3855L,115 PH3855L,115 NXP USA Inc. PH3855L.pdf Description: MOSFET N-CH 55V 24A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 25 V
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PH8030L,115 PH8030L,115 NXP USA Inc. PH8030L.pdf Description: MOSFET N-CH 30V 76.7A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 12 V
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PHB108NQ03LT,118 PHB108NQ03LT,118 NXP USA Inc. PHB_PHD_PHU108NQ03LT_3.pdf Description: MOSFET N-CH 25V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
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PHB110NQ08LT,118 PHB110NQ08LT,118 NXP USA Inc. PHP%2CPHB110NQ08LT.pdf Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 127.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6631 pF @ 25 V
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PHB112N06T,118 PHB112N06T,118 NXP USA Inc. PHP%2CPHB112N06T.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
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PHB153NQ08LT,118 PHB153NQ08LT,118 NXP USA Inc. PHP,PHB153NQ08LT.pdf Description: MOSFET N-CH 75V 75A D2PAK
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PHB160NQ08T,118 PHB160NQ08T,118 NXP USA Inc. PHB160NQ08T.pdf Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5585 pF @ 25 V
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PHB55N03LTA,118 PHB55N03LTA,118 NXP USA Inc. PHP%2CPHB%2CPHD55N03LTA.pdf Description: MOSFET N-CH 25V 55A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
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PHB96NQ03LT,118 PHB96NQ03LT,118 NXP USA Inc. PHP%2CPHB%2CPHD96NQ03LT.pdf Description: MOSFET N-CH 25V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 25A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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PHD108NQ03LT,118 PHD108NQ03LT,118 NXP USA Inc. PHB_PHD_PHU108NQ03LT_3.pdf Description: MOSFET N-CH 25V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
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PHD16N03T,118 PHD16N03T,118 NXP USA Inc. PHD16N03T-01.pdf Description: MOSFET N-CH 30V 13.1A DPAK
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PHD34NQ10T,118 PHD34NQ10T,118 NXP USA Inc. PHD34NQ10T.pdf Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
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PHD36N03LT,118 PHD36N03LT,118 NXP USA Inc. PHD%2CPHP36N03LT.pdf Description: MOSFET N-CH 30V 43.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.4A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 57.6W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
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PHD82NQ03LT,118 PHD82NQ03LT,118 NXP USA Inc. PHP_PHB_PHD82NQ03LT-01.pdf Description: MOSFET N-CH 30V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
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PHK24NQ04LT,518 PHK24NQ04LT,518 NXP USA Inc. PHK24NQ04LT.pdf Description: MOSFET N-CH 40V 21.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 14A, 10V
Power Dissipation (Max): 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2985 pF @ 25 V
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PHN210,118 PHN210,118 NXP USA Inc. PHN210.pdf Description: MOSFET 2N-CH 30V 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: 8-SO
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PHP110NQ08LT,127 PHP110NQ08LT,127 NXP USA Inc. PHP,PHB110NQ08LT.pdf Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 127.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6631 pF @ 25 V
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PHP110NQ08T,127 PHP110NQ08T,127 NXP USA Inc. PHP_PHB110NQ08T-01.pdf Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 113.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V
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PHP160NQ08T,127 PHP160NQ08T,127 NXP USA Inc. PHB160NQ08T.pdf Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5585 pF @ 25 V
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PHP21N06T,127 PHP21N06T,127 NXP USA Inc. PHP21N06T.pdf Description: MOSFET N-CH 55V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
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PHP45N03LTA,127 PHP45N03LTA,127 NXP USA Inc. PHP%2CPHB%2CPHD45N03LTA.pdf Description: MOSFET N-CH 25V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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PHP47NQ10T,127 PHP47NQ10T,127 NXP USA Inc. Description: MOSFET N-CH 100V 47A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
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PHP54N06T,127 PHP54N06T,127 NXP USA Inc. PHP54N06T.pdf Description: MOSFET N-CH 55V 54A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V
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PHP55N03LTA,127 PHP55N03LTA,127 NXP USA Inc. PHP,PHB,PHD55N03LTA.pdf Description: MOSFET N-CH 25V 55A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
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PHP63NQ03LT,127 PHP63NQ03LT,127 NXP USA Inc. PHP,PHB,PHD63NQ03LT.pdf Description: MOSFET N-CH 30V 68.9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68.9A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
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PHP96NQ03LT,127 PHP96NQ03LT,127 NXP USA Inc. PHP,PHB,PHD96NQ03LT.pdf Description: MOSFET N-CH 25V 75A TO220AB
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PHT4NQ10LT,135 PHT4NQ10LT,135 NXP USA Inc. Description: MOSFET N-CH 100V 3.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.75A, 5V
Power Dissipation (Max): 6.9W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 374 pF @ 25 V
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PHT8N06LT,135 PHT8N06LT,135 NXP USA Inc. PHT8N06LT.pdf Description: MOSFET N-CH 55V 3.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±13V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
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PHX14NQ20T,127 PHX14NQ20T,127 NXP USA Inc. PHX,F14NQ20T.pdf Description: MOSFET N-CH 200V 7.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
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PHX9NQ20T,127 PHX9NQ20T,127 NXP USA Inc. PHX,PHF9NQ20T.pdf Description: MOSFET N-CH 200V 5.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 959 pF @ 25 V
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PMN55LN,135 PMN55LN,135 NXP USA Inc. PMN55LN.pdf Description: MOSFET N-CH 20V 4.1A 6TSOP
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PSMN003-30B,118 PSMN003-30B,118 NXP USA Inc. PSMN003-30(P,B)_Rev01.pdf Description: MOSFET N-CH 30V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
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PSMN004-60P,127 PSMN004-60P,127 NXP USA Inc. Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
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PSMN008-75P,127 PSMN008-75P,127 NXP USA Inc. PSMN008-75P_Rev_4.pdf Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 122.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
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BC547B,112 BC547B,112 NXP USA Inc. BC847_Rev_Feb2017.pdf Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC547C,112 BC547C,112 NXP USA Inc. BC847_Rev_Feb2017.pdf Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC556B,112 BC556B,112 NXP USA Inc. BC556%2CBC557.pdf Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
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BC557B,112 BC557B,112 NXP USA Inc. BC556%2CBC557.pdf Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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MC908QB8CDWER MC908QB8CDWER NXP USA Inc. MC68HC908QB8.pdf Description: IC MCU 8BIT 8KB FLASH 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: HC08
Data Converters: A/D 10x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SCI, SPI
Peripherals: LVD, POR, PWM
Supplier Device Package: 16-SOIC
Part Status: Not For New Designs
Number of I/O: 13
DigiKey Programmable: Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+278.03 грн
Мінімальне замовлення: 1000
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MC9S08QG4CPBE MC9S08QG4CPBE NXP USA Inc. MC9S08QG8.pdf Description: IC MCU 8BIT 4KB FLASH 16DIP
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MC908QY4MDWER MC908QY4MDWER NXP USA Inc. MC68HC908QY4.pdf Description: IC MCU 8BIT 4KB FLASH 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: HC08
Data Converters: A/D 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Peripherals: LVD, POR, PWM
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of I/O: 5
DigiKey Programmable: Not Verified
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MC908QY2AVDWER MC908QY2AVDWER NXP USA Inc. MC68HC908QY4.pdf Description: IC MCU 8BIT 1.5KB FLASH 16SOIC
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MC33591FTAE MC33591FTAE NXP USA Inc. MC33591.pdf Description: RF RX FSK/OOK 315/434MHZ 24LQFP
Packaging: Tray
Package / Case: 24-LQFP
Sensitivity: -105dBm
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Modulation or Protocol: FSK, OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Applications: General Data Transfer
Current - Receiving: 5.7mA
Data Rate (Max): 11kBaud
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 24-LQFP (4x4)
Part Status: Obsolete
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MC33591FTAER2 MC33591FTAER2 NXP USA Inc. MC33591.pdf Description: RF RX FSK/OOK 315/434MHZ 24LQFP
Packaging: Tape & Reel (TR)
Package / Case: 24-LQFP
Sensitivity: -105dBm
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Modulation or Protocol: FSK, OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Applications: General Data Transfer
Current - Receiving: 5.7mA
Data Rate (Max): 11kBaud
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 24-LQFP (4x4)
Part Status: Obsolete
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MC33592FTAE MC33592FTAE NXP USA Inc. MC33592.pdf Description: RF RCVR OOK 315MHZ/434MHZ 24LQFP
Packaging: Tray
Package / Case: 24-LQFP
Sensitivity: -105dBm
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Modulation or Protocol: OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Applications: General Data Transfer
Current - Receiving: 5.7mA
Data Rate (Max): 11kBaud
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 24-LQFP (4x4)
Part Status: Obsolete
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MC33592FTAER2 MC33592FTAER2 NXP USA Inc. MC33592.pdf Description: RF RCVR OOK 315MHZ/434MHZ 24LQFP
Packaging: Tape & Reel (TR)
Package / Case: 24-LQFP
Sensitivity: -105dBm
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Modulation or Protocol: OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Applications: General Data Transfer
Current - Receiving: 5.7mA
Data Rate (Max): 11kBaud
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 24-LQFP (4x4)
Part Status: Obsolete
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MC33593FTAE MC33593FTAE NXP USA Inc. MC33593.pdf Description: RF RX FSK/OOK 868/915MHZ 24LQFP
Packaging: Tray
Package / Case: 24-LQFP
Sensitivity: -105dBm
Mounting Type: Surface Mount
Frequency: 868MHz, 915MHz
Modulation or Protocol: FSK, OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Data Transfer
Current - Receiving: 7.8mA
Data Rate (Max): 11kBaud
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 24-LQFP (4x4)
Part Status: Obsolete
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MC33593FTAER2 MC33593FTAER2 NXP USA Inc. MC33593.pdf Description: RF RX FSK/OOK 868/915MHZ 24LQFP
Packaging: Tape & Reel (TR)
Package / Case: 24-LQFP
Sensitivity: -105dBm
Mounting Type: Surface Mount
Frequency: 868MHz, 915MHz
Modulation or Protocol: FSK, OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Data Transfer
Current - Receiving: 7.8mA
Data Rate (Max): 11kBaud
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 24-LQFP (4x4)
Part Status: Obsolete
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MC33594FTAER2 MC33594FTAER2 NXP USA Inc. MC33594.pdf Description: RF RX FSK/OOK 315/434MHZ 24LQFP
Packaging: Tape & Reel (TR)
Package / Case: 24-LQFP
Sensitivity: -105dBm
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Modulation or Protocol: FSK, OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Data Transfer
Current - Receiving: 5.7mA
Data Rate (Max): 11kBaud
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 24-LQFP (4x4)
Part Status: Obsolete
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BLS2731-10,114 BLS2731-10.pdf
BLS2731-10,114
Виробник: NXP USA Inc.
Description: RF TRANS NPN 75V 3.1GHZ CDFM2
Packaging: Tray
Package / Case: SOT-445C
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 145W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Frequency - Transition: 3.1GHz
Supplier Device Package: CDFM2
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BLS3135-10,114 BLS3135-10_1.pdf
BLS3135-10,114
Виробник: NXP USA Inc.
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-445C
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 9dB
Power - Max: 34W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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BLS3135-20,114 BLS3135-20_1.pdf
BLS3135-20,114
Виробник: NXP USA Inc.
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8dB
Power - Max: 80W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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BLS3135-50,114 BLS3135-50_3.pdf
BLS3135-50,114
Виробник: NXP USA Inc.
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8dB
Power - Max: 80W
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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BLS3135-65,114 BLS3135-65_2.pdf
BLS3135-65,114
Виробник: NXP USA Inc.
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 7dB
Power - Max: 200W
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
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PRF947,115 PRF947.pdf
PRF947,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BF1204,115 BF1204_Rev_Sept2010.pdf
BF1204,115
Виробник: NXP USA Inc.
Description: FET RF 10V 400MHZ 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1205C,115 BF1205C.pdf
BF1205C,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
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BSH205,215 BSH205.pdf
BSH205,215
Виробник: NXP USA Inc.
Description: MOSFET P-CH 12V 750MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V
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PH3075L,115
PH3075L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 30A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 25 V
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PH3330L,115
PH3330L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 12 V
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PH3855L,115 PH3855L.pdf
PH3855L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 24A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 25 V
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PH8030L,115 PH8030L.pdf
PH8030L,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 76.7A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 12 V
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PHB108NQ03LT,118 PHB_PHD_PHU108NQ03LT_3.pdf
PHB108NQ03LT,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
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PHB110NQ08LT,118 PHP%2CPHB110NQ08LT.pdf
PHB110NQ08LT,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 127.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6631 pF @ 25 V
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PHB112N06T,118 PHP%2CPHB112N06T.pdf
PHB112N06T,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
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PHB153NQ08LT,118 PHP,PHB153NQ08LT.pdf
PHB153NQ08LT,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
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PHB160NQ08T,118 PHB160NQ08T.pdf
PHB160NQ08T,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5585 pF @ 25 V
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PHB55N03LTA,118 PHP%2CPHB%2CPHD55N03LTA.pdf
PHB55N03LTA,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 55A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
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PHB96NQ03LT,118 PHP%2CPHB%2CPHD96NQ03LT.pdf
PHB96NQ03LT,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 25A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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PHD108NQ03LT,118 PHB_PHD_PHU108NQ03LT_3.pdf
PHD108NQ03LT,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
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PHD16N03T,118 PHD16N03T-01.pdf
PHD16N03T,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 13.1A DPAK
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PHD34NQ10T,118 PHD34NQ10T.pdf
PHD34NQ10T,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
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PHD36N03LT,118 PHD%2CPHP36N03LT.pdf
PHD36N03LT,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 43.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.4A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 57.6W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
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PHD82NQ03LT,118 PHP_PHB_PHD82NQ03LT-01.pdf
PHD82NQ03LT,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
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PHK24NQ04LT,518 PHK24NQ04LT.pdf
PHK24NQ04LT,518
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 21.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 14A, 10V
Power Dissipation (Max): 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2985 pF @ 25 V
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PHN210,118 PHN210.pdf
PHN210,118
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 30V 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: 8-SO
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PHP110NQ08LT,127 PHP,PHB110NQ08LT.pdf
PHP110NQ08LT,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 127.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6631 pF @ 25 V
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PHP110NQ08T,127 PHP_PHB110NQ08T-01.pdf
PHP110NQ08T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 113.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V
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PHP160NQ08T,127 PHB160NQ08T.pdf
PHP160NQ08T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5585 pF @ 25 V
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PHP21N06T,127 PHP21N06T.pdf
PHP21N06T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
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PHP45N03LTA,127 PHP%2CPHB%2CPHD45N03LTA.pdf
PHP45N03LTA,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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PHP47NQ10T,127
PHP47NQ10T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 47A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
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PHP54N06T,127 PHP54N06T.pdf
PHP54N06T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 54A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V
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PHP55N03LTA,127 PHP,PHB,PHD55N03LTA.pdf
PHP55N03LTA,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 55A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
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PHP63NQ03LT,127 PHP,PHB,PHD63NQ03LT.pdf
PHP63NQ03LT,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 68.9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68.9A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
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PHP96NQ03LT,127 PHP,PHB,PHD96NQ03LT.pdf
PHP96NQ03LT,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 75A TO220AB
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PHT4NQ10LT,135
PHT4NQ10LT,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 3.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.75A, 5V
Power Dissipation (Max): 6.9W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 374 pF @ 25 V
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PHT8N06LT,135 PHT8N06LT.pdf
PHT8N06LT,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 3.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±13V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
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PHX14NQ20T,127 PHX,F14NQ20T.pdf
PHX14NQ20T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 200V 7.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
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PHX9NQ20T,127 PHX,PHF9NQ20T.pdf
PHX9NQ20T,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 200V 5.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 959 pF @ 25 V
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PMN55LN,135 PMN55LN.pdf
PMN55LN,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 4.1A 6TSOP
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PSMN003-30B,118 PSMN003-30(P,B)_Rev01.pdf
PSMN003-30B,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
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PSMN004-60P,127
PSMN004-60P,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
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PSMN008-75P,127 PSMN008-75P_Rev_4.pdf
PSMN008-75P,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 122.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
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BC547B,112 BC847_Rev_Feb2017.pdf
BC547B,112
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC547C,112 BC847_Rev_Feb2017.pdf
BC547C,112
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC556B,112 BC556%2CBC557.pdf
BC556B,112
Виробник: NXP USA Inc.
Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
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BC557B,112 BC556%2CBC557.pdf
BC557B,112
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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MC908QB8CDWER MC68HC908QB8.pdf
MC908QB8CDWER
Виробник: NXP USA Inc.
Description: IC MCU 8BIT 8KB FLASH 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: HC08
Data Converters: A/D 10x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SCI, SPI
Peripherals: LVD, POR, PWM
Supplier Device Package: 16-SOIC
Part Status: Not For New Designs
Number of I/O: 13
DigiKey Programmable: Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+278.03 грн
Мінімальне замовлення: 1000
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MC9S08QG4CPBE MC9S08QG8.pdf
MC9S08QG4CPBE
Виробник: NXP USA Inc.
Description: IC MCU 8BIT 4KB FLASH 16DIP
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MC908QY4MDWER MC68HC908QY4.pdf
MC908QY4MDWER
Виробник: NXP USA Inc.
Description: IC MCU 8BIT 4KB FLASH 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: HC08
Data Converters: A/D 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Peripherals: LVD, POR, PWM
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of I/O: 5
DigiKey Programmable: Not Verified
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MC908QY2AVDWER MC68HC908QY4.pdf
MC908QY2AVDWER
Виробник: NXP USA Inc.
Description: IC MCU 8BIT 1.5KB FLASH 16SOIC
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MC33591FTAE MC33591.pdf
MC33591FTAE
Виробник: NXP USA Inc.
Description: RF RX FSK/OOK 315/434MHZ 24LQFP
Packaging: Tray
Package / Case: 24-LQFP
Sensitivity: -105dBm
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Modulation or Protocol: FSK, OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Applications: General Data Transfer
Current - Receiving: 5.7mA
Data Rate (Max): 11kBaud
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 24-LQFP (4x4)
Part Status: Obsolete
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MC33591FTAER2 MC33591.pdf
MC33591FTAER2
Виробник: NXP USA Inc.
Description: RF RX FSK/OOK 315/434MHZ 24LQFP
Packaging: Tape & Reel (TR)
Package / Case: 24-LQFP
Sensitivity: -105dBm
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Modulation or Protocol: FSK, OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Applications: General Data Transfer
Current - Receiving: 5.7mA
Data Rate (Max): 11kBaud
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 24-LQFP (4x4)
Part Status: Obsolete
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MC33592FTAE MC33592.pdf
MC33592FTAE
Виробник: NXP USA Inc.
Description: RF RCVR OOK 315MHZ/434MHZ 24LQFP
Packaging: Tray
Package / Case: 24-LQFP
Sensitivity: -105dBm
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Modulation or Protocol: OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Applications: General Data Transfer
Current - Receiving: 5.7mA
Data Rate (Max): 11kBaud
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 24-LQFP (4x4)
Part Status: Obsolete
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MC33592FTAER2 MC33592.pdf
MC33592FTAER2
Виробник: NXP USA Inc.
Description: RF RCVR OOK 315MHZ/434MHZ 24LQFP
Packaging: Tape & Reel (TR)
Package / Case: 24-LQFP
Sensitivity: -105dBm
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Modulation or Protocol: OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Applications: General Data Transfer
Current - Receiving: 5.7mA
Data Rate (Max): 11kBaud
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 24-LQFP (4x4)
Part Status: Obsolete
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MC33593FTAE MC33593.pdf
MC33593FTAE
Виробник: NXP USA Inc.
Description: RF RX FSK/OOK 868/915MHZ 24LQFP
Packaging: Tray
Package / Case: 24-LQFP
Sensitivity: -105dBm
Mounting Type: Surface Mount
Frequency: 868MHz, 915MHz
Modulation or Protocol: FSK, OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Data Transfer
Current - Receiving: 7.8mA
Data Rate (Max): 11kBaud
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 24-LQFP (4x4)
Part Status: Obsolete
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MC33593FTAER2 MC33593.pdf
MC33593FTAER2
Виробник: NXP USA Inc.
Description: RF RX FSK/OOK 868/915MHZ 24LQFP
Packaging: Tape & Reel (TR)
Package / Case: 24-LQFP
Sensitivity: -105dBm
Mounting Type: Surface Mount
Frequency: 868MHz, 915MHz
Modulation or Protocol: FSK, OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Data Transfer
Current - Receiving: 7.8mA
Data Rate (Max): 11kBaud
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 24-LQFP (4x4)
Part Status: Obsolete
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MC33594FTAER2 MC33594.pdf
MC33594FTAER2
Виробник: NXP USA Inc.
Description: RF RX FSK/OOK 315/434MHZ 24LQFP
Packaging: Tape & Reel (TR)
Package / Case: 24-LQFP
Sensitivity: -105dBm
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Modulation or Protocol: FSK, OOK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Data Transfer
Current - Receiving: 5.7mA
Data Rate (Max): 11kBaud
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 24-LQFP (4x4)
Part Status: Obsolete
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