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PN4143 PN4143 onsemi PN4143.pdf Description: TRANS PNP 40V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSD1616AGBU KSD1616AGBU onsemi ksd1616a-d.pdf Description: TRANS NPN 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
на замовлення 21511 шт:
термін постачання 21-31 дні (днів)
9+39.17 грн
15+23.13 грн
100+14.74 грн
500+10.40 грн
1000+9.30 грн
2000+8.37 грн
5000+7.24 грн
10000+6.62 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
KSD1616AYTA KSD1616AYTA onsemi ksd1616a-d.pdf Description: TRANS NPN 60V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
2000+9.57 грн
4000+8.35 грн
6000+7.91 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
KSB1116ALTA KSB1116ALTA onsemi KSB1116A.pdf Description: TRANS PNP 60V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSB1116AGTA KSB1116AGTA onsemi KSB1116A.pdf Description: TRANS PNP 60V 1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSB1116LBU KSB1116LBU onsemi KSB1116A.pdf Description: TRANS PNP 50V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSB1116AYBU KSB1116AYBU onsemi KSB1116A.pdf Description: TRANS PNP 60V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSB1116GBU KSB1116GBU onsemi KSB1116A.pdf Description: TRANS PNP 50V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSB1116ALBU KSB1116ALBU onsemi KSB1116A.pdf Description: TRANS PNP 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSB1116YBU KSB1116YBU onsemi KSB1116A.pdf Description: TRANS PNP 50V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSB1116LTA KSB1116LTA onsemi KSB1116A.pdf Description: TRANS PNP 50V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
MMBT4356 MMBT4356 onsemi MMBT4356.pdf Description: TRANS PNP 80V 0.8A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSB1116GTA KSB1116GTA onsemi KSB1116A.pdf Description: TRANS PNP 50V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
товару немає в наявності
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KSC5019MBU KSC5019MBU onsemi ksc5019-d.pdf Description: TRANS NPN 10V 2A TO-92
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KSD1616YBU KSD1616YBU onsemi KSD1616(A).pdf Description: TRANS NPN 50V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
товару немає в наявності
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KSD1616LPWD KSD1616LPWD onsemi KSD1616(A).pdf Description: TRANS NPN 50V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSB1116AGBU KSB1116AGBU onsemi KSB1116A.pdf Description: TRANS PNP 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSD1616AYBU KSD1616AYBU onsemi ksd1616a-d.pdf Description: TRANS NPN 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSA733YIUTA KSA733YIUTA onsemi ksa733-d.pdf Description: TRANS PNP 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товару немає в наявності
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MMBT4355 MMBT4355 onsemi PN4355,%20MMBT4355.pdf Description: TRANS PNP 60V 0.8A SOT23-3
товару немає в наявності
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MMSZ4684 MMSZ4684 onsemi MMSZ4684.pdf Description: DIODE ZENER 3.3V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
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MMSZ4686 MMSZ4686 onsemi Description: DIODE ZENER 3.9V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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MMSZ5228B MMSZ5228B onsemi MMSZ5227B.pdf Description: DIODE ZENER 3.9V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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MMSZ4688 MMSZ4688 onsemi Description: DIODE ZENER 4.7V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
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PN918 PN918 onsemi PN918,%20MMBT918.pdf Description: RF TRANS NPN 15V 600MHZ TO92-3
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PN200 PN200 onsemi PN200(A), MMBT200(A).pdf Description: TRANS PNP 45V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
товару немає в наявності
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KSP44BU KSP44BU onsemi ksp45-d.pdf Description: TRANS NPN 400V 0.3A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
на замовлення 13343 шт:
термін постачання 21-31 дні (днів)
9+41.73 грн
14+25.01 грн
100+15.99 грн
500+11.32 грн
1000+10.13 грн
2000+9.13 грн
5000+7.92 грн
10000+7.25 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
PN200A PN200A onsemi ONSM-S-A0003589566-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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PN200RM PN200RM onsemi PN200(A), MMBT200(A).pdf Description: TRANS PNP 45V 0.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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MPS3702 MPS3702 onsemi MPS3702%2C%20MMBT3702_DS.pdf Description: TRANS PNP 25V 0.8A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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MPS3703 MPS3703 onsemi MPS3703.pdf Description: TRANS PNP 30V 0.8A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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KSA1370EBU KSA1370EBU onsemi KSA1370.pdf Description: TRANS PNP 200V 0.1A TO-92L
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KSA1370FTA KSA1370FTA onsemi KSA1370.pdf Description: TRANS PNP 200V 0.1A TO-92L
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KSA1370ETA KSA1370ETA onsemi KSA1370.pdf Description: TRANS PNP 200V 0.1A TO-92L
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KSA1370FBU KSA1370FBU onsemi KSA1370.pdf Description: TRANS PNP 200V 0.1A TO-92L
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MMSD4448 MMSD4448 onsemi mmsd4448-d.pdf Description: DIODE STANDARD 100V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
3000+3.17 грн
6000+2.73 грн
9000+2.57 грн
15000+2.24 грн
21000+2.14 грн
30000+2.04 грн
75000+1.82 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MMSD3070 MMSD3070 onsemi mmsd3070-d.pdf Description: DIODE STANDARD 200V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
на замовлення 231000 шт:
термін постачання 21-31 дні (днів)
3000+2.71 грн
6000+2.54 грн
9000+2.52 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MPSL01 MPSL01 onsemi MPSL01.pdf Description: TRANS NPN 120V 0.2A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 625 mW
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MMSD914 MMSD914 onsemi mmsd914t1-d.pdf Description: DIODE STANDARD 100V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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MPSA56RA MPSA56RA onsemi MPSA56%2CMMBTA56%2CPZTA56_Feb2015.pdf Description: TRANS PNP 80V 0.5A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MMSZ5243B MMSZ5243B onsemi MMSZ5227B.pdf Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
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MMSZ5249B MMSZ5249B onsemi MMSZ5227B.pdf Description: DIODE ZENER 19V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
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MMSZ5255B MMSZ5255B onsemi MMSZ5227B.pdf Description: DIODE ZENER 28V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
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KSC2310RTA KSC2310RTA onsemi KSC2310.pdf Description: TRANS NPN 150V 0.05A TO-92L
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KSC2331OTA KSC2331OTA onsemi ksc2331-d.pdf Description: TRANS NPN 60V 0.7A TO92-3
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KSC2331OBU KSC2331OBU onsemi ksc2331-d.pdf Description: TRANS NPN 60V 0.7A TO92-3
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KSA931OTA KSA931OTA onsemi ksa931-d.pdf Description: TRANS PNP 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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KSA910OBU KSA910OBU onsemi Description: TRANS PNP 150V 0.05A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
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KSA931YTA KSA931YTA onsemi ksa931-d.pdf Description: TRANS PNP 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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KSA931OBU KSA931OBU onsemi ksa931-d.pdf Description: TRANS PNP 60V 0.7A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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В кошику  од. на суму  грн.
KSA931YBU KSA931YBU onsemi ksa931-d.pdf Description: TRANS PNP 60V 0.7A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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KSA910YTA KSA910YTA onsemi Description: TRANS PNP 150V 0.05A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
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KSA910YBU KSA910YBU onsemi Description: TRANS PNP 150V 0.05A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
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MMSZ5238B MMSZ5238B onsemi MMSZ5227B.pdf Description: DIODE ZENER 8.7V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
товару немає в наявності
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MPS8598 MPS8598 onsemi MPS8598_DS.pdf Description: TRANS PNP 60V 0.1A TO-92
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MPSA13RA MPSA13RA onsemi MPSA13Rev2007.pdf Description: TRANS NPN DARL 30V 1.2A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товару немає в наявності
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MMSZ5247B MMSZ5247B onsemi MMSZ5227B.pdf Description: DIODE ZENER 17V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
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FJN5471PWD FJN5471PWD onsemi Description: TRANS NPN 20V 5A TO92-3
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KSA928AYTA KSA928AYTA onsemi ksa928a-d.pdf Description: TRANS PNP 30V 2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
2000+10.03 грн
4000+8.76 грн
6000+8.30 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
FJX597JBTF FJX597JBTF onsemi FJX597JB.pdf Description: JFET N-CH 20V 1MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Voltage - Breakdown (V(BR)GSS): 20 V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: SOT-323
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 150 µA @ 5 V
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PN4143 PN4143.pdf
PN4143
Виробник: onsemi
Description: TRANS PNP 40V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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KSD1616AGBU ksd1616a-d.pdf
KSD1616AGBU
Виробник: onsemi
Description: TRANS NPN 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
на замовлення 21511 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+39.17 грн
15+23.13 грн
100+14.74 грн
500+10.40 грн
1000+9.30 грн
2000+8.37 грн
5000+7.24 грн
10000+6.62 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
KSD1616AYTA ksd1616a-d.pdf
KSD1616AYTA
Виробник: onsemi
Description: TRANS NPN 60V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+9.57 грн
4000+8.35 грн
6000+7.91 грн
Мінімальне замовлення: 2000
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KSB1116ALTA KSB1116A.pdf
KSB1116ALTA
Виробник: onsemi
Description: TRANS PNP 60V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
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KSB1116AGTA KSB1116A.pdf
KSB1116AGTA
Виробник: onsemi
Description: TRANS PNP 60V 1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
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KSB1116LBU KSB1116A.pdf
KSB1116LBU
Виробник: onsemi
Description: TRANS PNP 50V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
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KSB1116AYBU KSB1116A.pdf
KSB1116AYBU
Виробник: onsemi
Description: TRANS PNP 60V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
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KSB1116GBU KSB1116A.pdf
KSB1116GBU
Виробник: onsemi
Description: TRANS PNP 50V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSB1116ALBU KSB1116A.pdf
KSB1116ALBU
Виробник: onsemi
Description: TRANS PNP 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSB1116YBU KSB1116A.pdf
KSB1116YBU
Виробник: onsemi
Description: TRANS PNP 50V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSB1116LTA KSB1116A.pdf
KSB1116LTA
Виробник: onsemi
Description: TRANS PNP 50V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
MMBT4356 MMBT4356.pdf
MMBT4356
Виробник: onsemi
Description: TRANS PNP 80V 0.8A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSB1116GTA KSB1116A.pdf
KSB1116GTA
Виробник: onsemi
Description: TRANS PNP 50V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
товару немає в наявності
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KSC5019MBU ksc5019-d.pdf
KSC5019MBU
Виробник: onsemi
Description: TRANS NPN 10V 2A TO-92
товару немає в наявності
В кошику  од. на суму  грн.
KSD1616YBU KSD1616(A).pdf
KSD1616YBU
Виробник: onsemi
Description: TRANS NPN 50V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
товару немає в наявності
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KSD1616LPWD KSD1616(A).pdf
KSD1616LPWD
Виробник: onsemi
Description: TRANS NPN 50V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSB1116AGBU KSB1116A.pdf
KSB1116AGBU
Виробник: onsemi
Description: TRANS PNP 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSD1616AYBU ksd1616a-d.pdf
KSD1616AYBU
Виробник: onsemi
Description: TRANS NPN 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
товару немає в наявності
В кошику  од. на суму  грн.
KSA733YIUTA ksa733-d.pdf
KSA733YIUTA
Виробник: onsemi
Description: TRANS PNP 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
MMBT4355 PN4355,%20MMBT4355.pdf
MMBT4355
Виробник: onsemi
Description: TRANS PNP 60V 0.8A SOT23-3
товару немає в наявності
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MMSZ4684 MMSZ4684.pdf
MMSZ4684
Виробник: onsemi
Description: DIODE ZENER 3.3V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
товару немає в наявності
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MMSZ4686
MMSZ4686
Виробник: onsemi
Description: DIODE ZENER 3.9V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
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MMSZ5228B MMSZ5227B.pdf
MMSZ5228B
Виробник: onsemi
Description: DIODE ZENER 3.9V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товару немає в наявності
В кошику  од. на суму  грн.
MMSZ4688
MMSZ4688
Виробник: onsemi
Description: DIODE ZENER 4.7V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
товару немає в наявності
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PN918 PN918,%20MMBT918.pdf
PN918
Виробник: onsemi
Description: RF TRANS NPN 15V 600MHZ TO92-3
товару немає в наявності
В кошику  од. на суму  грн.
PN200 PN200(A), MMBT200(A).pdf
PN200
Виробник: onsemi
Description: TRANS PNP 45V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
товару немає в наявності
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KSP44BU ksp45-d.pdf
KSP44BU
Виробник: onsemi
Description: TRANS NPN 400V 0.3A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
на замовлення 13343 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+41.73 грн
14+25.01 грн
100+15.99 грн
500+11.32 грн
1000+10.13 грн
2000+9.13 грн
5000+7.92 грн
10000+7.25 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
PN200A ONSM-S-A0003589566-1.pdf?t.download=true&u=5oefqw
PN200A
Виробник: onsemi
Description: TRANS PNP 45V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
PN200RM PN200(A), MMBT200(A).pdf
PN200RM
Виробник: onsemi
Description: TRANS PNP 45V 0.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
товару немає в наявності
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MPS3702 MPS3702%2C%20MMBT3702_DS.pdf
MPS3702
Виробник: onsemi
Description: TRANS PNP 25V 0.8A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
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MPS3703 MPS3703.pdf
MPS3703
Виробник: onsemi
Description: TRANS PNP 30V 0.8A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товару немає в наявності
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KSA1370EBU KSA1370.pdf
KSA1370EBU
Виробник: onsemi
Description: TRANS PNP 200V 0.1A TO-92L
товару немає в наявності
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KSA1370FTA KSA1370.pdf
KSA1370FTA
Виробник: onsemi
Description: TRANS PNP 200V 0.1A TO-92L
товару немає в наявності
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KSA1370ETA KSA1370.pdf
KSA1370ETA
Виробник: onsemi
Description: TRANS PNP 200V 0.1A TO-92L
товару немає в наявності
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KSA1370FBU KSA1370.pdf
KSA1370FBU
Виробник: onsemi
Description: TRANS PNP 200V 0.1A TO-92L
товару немає в наявності
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MMSD4448 mmsd4448-d.pdf
MMSD4448
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.17 грн
6000+2.73 грн
9000+2.57 грн
15000+2.24 грн
21000+2.14 грн
30000+2.04 грн
75000+1.82 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MMSD3070 mmsd3070-d.pdf
MMSD3070
Виробник: onsemi
Description: DIODE STANDARD 200V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
на замовлення 231000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.71 грн
6000+2.54 грн
9000+2.52 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MPSL01 MPSL01.pdf
MPSL01
Виробник: onsemi
Description: TRANS NPN 120V 0.2A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 625 mW
товару немає в наявності
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MMSD914 mmsd914t1-d.pdf
MMSD914
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товару немає в наявності
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MPSA56RA MPSA56%2CMMBTA56%2CPZTA56_Feb2015.pdf
MPSA56RA
Виробник: onsemi
Description: TRANS PNP 80V 0.5A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MMSZ5243B MMSZ5227B.pdf
MMSZ5243B
Виробник: onsemi
Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
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MMSZ5249B MMSZ5227B.pdf
MMSZ5249B
Виробник: onsemi
Description: DIODE ZENER 19V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
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MMSZ5255B MMSZ5227B.pdf
MMSZ5255B
Виробник: onsemi
Description: DIODE ZENER 28V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
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KSC2310RTA KSC2310.pdf
KSC2310RTA
Виробник: onsemi
Description: TRANS NPN 150V 0.05A TO-92L
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KSC2331OTA ksc2331-d.pdf
KSC2331OTA
Виробник: onsemi
Description: TRANS NPN 60V 0.7A TO92-3
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KSC2331OBU ksc2331-d.pdf
KSC2331OBU
Виробник: onsemi
Description: TRANS NPN 60V 0.7A TO92-3
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KSA931OTA ksa931-d.pdf
KSA931OTA
Виробник: onsemi
Description: TRANS PNP 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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KSA910OBU
KSA910OBU
Виробник: onsemi
Description: TRANS PNP 150V 0.05A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
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KSA931YTA ksa931-d.pdf
KSA931YTA
Виробник: onsemi
Description: TRANS PNP 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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KSA931OBU ksa931-d.pdf
KSA931OBU
Виробник: onsemi
Description: TRANS PNP 60V 0.7A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
товару немає в наявності
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KSA931YBU ksa931-d.pdf
KSA931YBU
Виробник: onsemi
Description: TRANS PNP 60V 0.7A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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KSA910YTA
KSA910YTA
Виробник: onsemi
Description: TRANS PNP 150V 0.05A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
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KSA910YBU
KSA910YBU
Виробник: onsemi
Description: TRANS PNP 150V 0.05A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
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MMSZ5238B MMSZ5227B.pdf
MMSZ5238B
Виробник: onsemi
Description: DIODE ZENER 8.7V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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MPS8598 MPS8598_DS.pdf
MPS8598
Виробник: onsemi
Description: TRANS PNP 60V 0.1A TO-92
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MPSA13RA MPSA13Rev2007.pdf
MPSA13RA
Виробник: onsemi
Description: TRANS NPN DARL 30V 1.2A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MMSZ5247B MMSZ5227B.pdf
MMSZ5247B
Виробник: onsemi
Description: DIODE ZENER 17V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
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FJN5471PWD
FJN5471PWD
Виробник: onsemi
Description: TRANS NPN 20V 5A TO92-3
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KSA928AYTA ksa928a-d.pdf
KSA928AYTA
Виробник: onsemi
Description: TRANS PNP 30V 2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+10.03 грн
4000+8.76 грн
6000+8.30 грн
Мінімальне замовлення: 2000
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FJX597JBTF FJX597JB.pdf
FJX597JBTF
Виробник: onsemi
Description: JFET N-CH 20V 1MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Voltage - Breakdown (V(BR)GSS): 20 V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: SOT-323
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 150 µA @ 5 V
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