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FODM3063R2 FODM3063R2 onsemi ONSM-S-A0003546518-1.pdf?t.download=true&u=5oefqw Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Voltage - Isolation: 3750Vrms
Approval Agency: cUL, UL
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 600V/µs
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 43526 шт:
термін постачання 21-31 дні (днів)
2+166.32 грн
10+104.30 грн
100+75.58 грн
500+60.31 грн
1000+57.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FPF2125 FPF2125 onsemi ONSM-S-A0003590112-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 125mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-5
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
товару немає в наявності
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FQB9N50CFTM_WS FQB9N50CFTM_WS onsemi FQB9N50CF.pdf Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
товару немає в наявності
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FQN1N50CTA FQN1N50CTA onsemi fqn1n50c-d.pdf Description: MOSFET N-CH 500V 380MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
на замовлення 139 шт:
термін постачання 21-31 дні (днів)
5+70.83 грн
10+42.38 грн
100+27.69 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FQT1N60CTF-WS FQT1N60CTF-WS onsemi fqt1n60ctf-ws-d.pdf Description: MOSFET N-CH 600V 200MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
на замовлення 9542 шт:
термін постачання 21-31 дні (днів)
4+84.36 грн
10+49.89 грн
100+33.16 грн
500+24.15 грн
1000+21.89 грн
2000+19.98 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ISL9V5045S3ST ISL9V5045S3ST onsemi isl9v5045s3st-d.pdf Description: IGBT 480V 51A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: D²PAK (TO-263)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
товару немає в наявності
В кошику  од. на суму  грн.
MOC8050SR2VM MOC8050SR2VM onsemi MOC8021M-D.PDF Description: OPTOISO 4.17KV DARLINGTON 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 8.5µs, 95µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)
5+67.64 грн
10+45.75 грн
100+33.64 грн
500+26.50 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CAT4101TV-T75 CAT4101TV-T75 onsemi CAT4101_Rev8_7-17-12.pdf Description: IC LED DRVR LIN PWM 1A D2PAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Voltage - Output: 25V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Supplier Device Package: D²PAK-5 (TO-263-5)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
товару немає в наявності
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CAT4101TV-T75 CAT4101TV-T75 onsemi CAT4101_Rev8_7-17-12.pdf Description: IC LED DRVR LIN PWM 1A D2PAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Voltage - Output: 25V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Supplier Device Package: D²PAK-5 (TO-263-5)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
товару немає в наявності
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FDB047N10 FDB047N10 onsemi FAIRS46508-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
800+142.13 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
FDMS8880 FDMS8880 onsemi fdms8880-d.pdf Description: MOSFET N-CH 30V 13.5A/21A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
товару немає в наявності
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FFPF08S60SNTU FFPF08S60SNTU onsemi ffpf08s60sn-d.pdf Description: DIODE GEN PURP 600V 8A TO220F-2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
FOD410 FOD410 onsemi fod4118-d.pdf Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 1825 шт:
термін постачання 21-31 дні (днів)
2+225.21 грн
50+153.47 грн
100+128.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FOD4108 FOD4108 onsemi fod4118-d.pdf Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 19142 шт:
термін постачання 21-31 дні (днів)
2+291.27 грн
50+198.71 грн
100+162.75 грн
500+128.76 грн
1000+118.10 грн
2000+113.22 грн
5000+109.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FPF1003A FPF1003A onsemi fpf1004-d.pdf Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (0.96x1.66)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+30.56 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FSA642UMX FSA642UMX onsemi Description: IC SWITCH 3PDT 24UMLP
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: MIPI
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 24-UMLP (3.4x2.5)
Voltage - Supply, Single (V+): 2.65V ~ 4.3V
Switch Circuit: 3PDT
Part Status: Obsolete
Number of Channels: 1
товару немає в наявності
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FDB047N10 FDB047N10 onsemi FAIRS46508-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
на замовлення 4211 шт:
термін постачання 21-31 дні (днів)
1+374.83 грн
10+239.79 грн
100+170.99 грн
В кошику  од. на суму  грн.
FDMS8880 FDMS8880 onsemi fdms8880-d.pdf Description: MOSFET N-CH 30V 13.5A/21A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
FPF1003A FPF1003A onsemi fpf1004-d.pdf Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (0.96x1.66)
на замовлення 4802 шт:
термін постачання 21-31 дні (днів)
5+75.60 грн
10+65.29 грн
25+61.95 грн
100+44.65 грн
250+39.46 грн
500+37.38 грн
1000+28.60 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDA24N50 FDA24N50 onsemi fda24n50-d.pdf Description: MOSFET N-CH 500V 24A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FDA28N50 FDA28N50 onsemi fda28n50-d.pdf Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
1+389.15 грн
30+203.31 грн
120+181.69 грн
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FGH60N60SFDTU FGH60N60SFDTU onsemi fgh60n60sfd-d.pdf Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
товару немає в наявності
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FGH60N60UFDTU FGH60N60UFDTU onsemi fgh60n60ufd-d.pdf Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/130ns
Switching Energy: 1.81mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
товару немає в наявності
В кошику  од. на суму  грн.
FSUSB104UMX FSUSB104UMX onsemi fsusb104-d.pdf Description: IC USB SWITCH DUAL DPDT 10UMLP
Features: Bi-Directional, USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 3V ~ 4.4V
Switch Circuit: DPDT
Number of Channels: 1
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+24.64 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SG6521SZ SG6521SZ onsemi SG6521.pdf Description: IC SUPERVISOR 4 CHANNEL 16SOP
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FSUSB104UMX FSUSB104UMX onsemi fsusb104-d.pdf Description: IC USB SWITCH DUAL DPDT 10UMLP
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 3V ~ 4.4V
Switch Circuit: DPDT
Number of Channels: 1
на замовлення 13767 шт:
термін постачання 21-31 дні (днів)
3+108.23 грн
10+64.07 грн
25+53.49 грн
100+38.96 грн
250+33.45 грн
500+30.05 грн
1000+26.76 грн
2500+23.75 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SG6521SZ SG6521SZ onsemi SG6521.pdf Description: IC SUPERVISOR 4 CHANNEL 16SOP
товару немає в наявності
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1N4002_NL 1N4002_NL onsemi 1N4001.pdf Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N4004_NL 1N4004_NL onsemi 1N4001.pdf Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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1N4448WT 1N4448WT onsemi ONSM-S-A0003584797-1.pdf?t.download=true&u=5oefqw Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 368000 шт:
термін постачання 21-31 дні (днів)
8000+1.28 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
1N5231C 1N5231C onsemi 1n5221b-d.pdf Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
на замовлення 4172 шт:
термін постачання 21-31 дні (днів)
45+7.16 грн
76+4.06 грн
161+1.91 грн
500+1.72 грн
1000+1.69 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
1N5231CTR 1N5231CTR onsemi 1N5231C-D.pdf Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
на замовлення 95000 шт:
термін постачання 21-31 дні (днів)
5000+1.84 грн
10000+1.55 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
1N914BWT 1N914BWT onsemi 1N914BWT-D.pdf Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 1664000 шт:
термін постачання 21-31 дні (днів)
8000+1.06 грн
16000+1.01 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
2N5245_J35Z 2N5245_J35Z onsemi 2N5245.pdf Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
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2N5246_J35Z 2N5246_J35Z onsemi 2N5246.pdf Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 7mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
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2N5247_J35Z 2N5247_J35Z onsemi Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Frequency: 400MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 4dB
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
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2N5950_J35Z 2N5950_J35Z onsemi 2N5950.pdf Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
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2N5951_J35Z 2N5951_J35Z onsemi 2N5951.pdf Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 13mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
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2N5952_J35Z 2N5952_J35Z onsemi 2N5952.pdf Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 8mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
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2N5953_J35Z 2N5953_J35Z onsemi 2N5953.pdf Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 5mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
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2N7002_NB9G002 2N7002_NB9G002 onsemi 2N7000,02(A).pdf Description: MOSFET N-CH 60V 115MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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4N26M_F132 4N26M_F132 onsemi 4N25-28_35-37, H11A1-A5.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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4N32SVM 4N32SVM onsemi til113m-d.pdf Description: OPTOISO 4.17KV DARL W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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4N33TVM 4N33TVM onsemi til113m-d.pdf Description: OPTOISO 4.17KV DARL W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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4N35M_F132 4N35M_F132 onsemi 4N25-28_35-37%2C%20H11A1-A5.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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4N37M_F132 4N37M_F132 onsemi 4N25-28_35-37%2C%20H11A1-A5.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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74LCX373BQX 74LCX373BQX onsemi DS_488_74LCX373.pdf Description: IC D-TYPE TRANSP SGL 8:8 20DQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-DQFN (2.5x4.5)
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74LCX541BQX 74LCX541BQX onsemi Description: IC BUF NON-INVERT 3.6V 20DQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-DQFN (2.5x4.5)
Part Status: Obsolete
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74VCX162839MTDX 74VCX162839MTDX onsemi 74VCX162839.pdf Description: IC REGISTER BUFFER 56-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Register, Multiplexed
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Supplier Device Package: 56-TSSOP
Number of Bits per Element: 20
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74VCX16839MTD 74VCX16839MTD onsemi 74VCX16839.pdf Description: IC BUF NON-INVERT 3.6V 56TSSOP
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74VCX16839MTDX 74VCX16839MTDX onsemi 74VCX16839.pdf Description: IC BUF NON-INVERT 3.6V 56TSSOP
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BAX16 BAX16 onsemi FAIRS26047-1.pdf?t.download=true&u=5oefqw Description: DIODE STANDARD 150V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
на замовлення 8216 шт:
термін постачання 21-31 дні (днів)
24+13.53 грн
38+8.20 грн
100+4.27 грн
500+3.07 грн
1000+2.64 грн
2000+2.46 грн
5000+2.24 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BAX16TR BAX16TR onsemi FAIRS26047-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 150V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+3.03 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BC182B_J35Z BC182B_J35Z onsemi BC182B.pdf Description: TRANS NPN 50V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
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BC182LA_J35Z BC182LA_J35Z onsemi BC182L.pdf Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
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BC182LB_J35Z BC182LB_J35Z onsemi BC182LB.pdf Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
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BC182L_J35Z BC182L_J35Z onsemi BC182L.pdf Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
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BC182_J35Z BC182_J35Z onsemi BC182.pdf Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
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BC183C_J35Z BC183C_J35Z onsemi BC183C.pdf Description: TRANS NPN 30V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
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BC183LC_J35Z BC183LC_J35Z onsemi BC183.pdf Description: TRANS NPN 30V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
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FODM3063R2 ONSM-S-A0003546518-1.pdf?t.download=true&u=5oefqw
FODM3063R2
Виробник: onsemi
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Voltage - Isolation: 3750Vrms
Approval Agency: cUL, UL
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 600V/µs
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 43526 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+166.32 грн
10+104.30 грн
100+75.58 грн
500+60.31 грн
1000+57.05 грн
Мінімальне замовлення: 2
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FPF2125 ONSM-S-A0003590112-1.pdf?t.download=true&u=5oefqw
FPF2125
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 125mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-5
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
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FQB9N50CFTM_WS FQB9N50CF.pdf
FQB9N50CFTM_WS
Виробник: onsemi
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
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FQN1N50CTA fqn1n50c-d.pdf
FQN1N50CTA
Виробник: onsemi
Description: MOSFET N-CH 500V 380MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
на замовлення 139 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+70.83 грн
10+42.38 грн
100+27.69 грн
Мінімальне замовлення: 5
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FQT1N60CTF-WS fqt1n60ctf-ws-d.pdf
FQT1N60CTF-WS
Виробник: onsemi
Description: MOSFET N-CH 600V 200MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
на замовлення 9542 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+84.36 грн
10+49.89 грн
100+33.16 грн
500+24.15 грн
1000+21.89 грн
2000+19.98 грн
Мінімальне замовлення: 4
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ISL9V5045S3ST isl9v5045s3st-d.pdf
ISL9V5045S3ST
Виробник: onsemi
Description: IGBT 480V 51A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: D²PAK (TO-263)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
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MOC8050SR2VM MOC8021M-D.PDF
MOC8050SR2VM
Виробник: onsemi
Description: OPTOISO 4.17KV DARLINGTON 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 8.5µs, 95µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+67.64 грн
10+45.75 грн
100+33.64 грн
500+26.50 грн
Мінімальне замовлення: 5
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CAT4101TV-T75 CAT4101_Rev8_7-17-12.pdf
CAT4101TV-T75
Виробник: onsemi
Description: IC LED DRVR LIN PWM 1A D2PAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Voltage - Output: 25V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Supplier Device Package: D²PAK-5 (TO-263-5)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
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CAT4101TV-T75 CAT4101_Rev8_7-17-12.pdf
CAT4101TV-T75
Виробник: onsemi
Description: IC LED DRVR LIN PWM 1A D2PAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Voltage - Output: 25V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Supplier Device Package: D²PAK-5 (TO-263-5)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
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FDB047N10 FAIRS46508-1.pdf?t.download=true&u=5oefqw
FDB047N10
Виробник: onsemi
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+142.13 грн
Мінімальне замовлення: 800
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FDMS8880 fdms8880-d.pdf
FDMS8880
Виробник: onsemi
Description: MOSFET N-CH 30V 13.5A/21A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
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FFPF08S60SNTU ffpf08s60sn-d.pdf
FFPF08S60SNTU
Виробник: onsemi
Description: DIODE GEN PURP 600V 8A TO220F-2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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FOD410 fod4118-d.pdf
FOD410
Виробник: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 1825 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+225.21 грн
50+153.47 грн
100+128.65 грн
Мінімальне замовлення: 2
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FOD4108 fod4118-d.pdf
FOD4108
Виробник: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 19142 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+291.27 грн
50+198.71 грн
100+162.75 грн
500+128.76 грн
1000+118.10 грн
2000+113.22 грн
5000+109.18 грн
Мінімальне замовлення: 2
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FPF1003A fpf1004-d.pdf
FPF1003A
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (0.96x1.66)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+30.56 грн
Мінімальне замовлення: 3000
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FSA642UMX
FSA642UMX
Виробник: onsemi
Description: IC SWITCH 3PDT 24UMLP
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: MIPI
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 24-UMLP (3.4x2.5)
Voltage - Supply, Single (V+): 2.65V ~ 4.3V
Switch Circuit: 3PDT
Part Status: Obsolete
Number of Channels: 1
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FDB047N10 FAIRS46508-1.pdf?t.download=true&u=5oefqw
FDB047N10
Виробник: onsemi
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
на замовлення 4211 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+374.83 грн
10+239.79 грн
100+170.99 грн
В кошику  од. на суму  грн.
FDMS8880 fdms8880-d.pdf
FDMS8880
Виробник: onsemi
Description: MOSFET N-CH 30V 13.5A/21A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
товару немає в наявності
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FPF1003A fpf1004-d.pdf
FPF1003A
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (0.96x1.66)
на замовлення 4802 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+75.60 грн
10+65.29 грн
25+61.95 грн
100+44.65 грн
250+39.46 грн
500+37.38 грн
1000+28.60 грн
Мінімальне замовлення: 5
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FDA24N50 fda24n50-d.pdf
FDA24N50
Виробник: onsemi
Description: MOSFET N-CH 500V 24A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
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FDA28N50 fda28n50-d.pdf
FDA28N50
Виробник: onsemi
Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+389.15 грн
30+203.31 грн
120+181.69 грн
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FGH60N60SFDTU fgh60n60sfd-d.pdf
FGH60N60SFDTU
Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
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FGH60N60UFDTU fgh60n60ufd-d.pdf
FGH60N60UFDTU
Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/130ns
Switching Energy: 1.81mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
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FSUSB104UMX fsusb104-d.pdf
FSUSB104UMX
Виробник: onsemi
Description: IC USB SWITCH DUAL DPDT 10UMLP
Features: Bi-Directional, USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 3V ~ 4.4V
Switch Circuit: DPDT
Number of Channels: 1
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+24.64 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SG6521SZ SG6521.pdf
SG6521SZ
Виробник: onsemi
Description: IC SUPERVISOR 4 CHANNEL 16SOP
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FSUSB104UMX fsusb104-d.pdf
FSUSB104UMX
Виробник: onsemi
Description: IC USB SWITCH DUAL DPDT 10UMLP
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 3V ~ 4.4V
Switch Circuit: DPDT
Number of Channels: 1
на замовлення 13767 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+108.23 грн
10+64.07 грн
25+53.49 грн
100+38.96 грн
250+33.45 грн
500+30.05 грн
1000+26.76 грн
2500+23.75 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SG6521SZ SG6521.pdf
SG6521SZ
Виробник: onsemi
Description: IC SUPERVISOR 4 CHANNEL 16SOP
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1N4002_NL 1N4001.pdf
1N4002_NL
Виробник: onsemi
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N4004_NL 1N4001.pdf
1N4004_NL
Виробник: onsemi
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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1N4448WT ONSM-S-A0003584797-1.pdf?t.download=true&u=5oefqw
1N4448WT
Виробник: onsemi
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 368000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+1.28 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
1N5231C 1n5221b-d.pdf
1N5231C
Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
на замовлення 4172 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
45+7.16 грн
76+4.06 грн
161+1.91 грн
500+1.72 грн
1000+1.69 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
1N5231CTR 1N5231C-D.pdf
1N5231CTR
Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
на замовлення 95000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+1.84 грн
10000+1.55 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
1N914BWT 1N914BWT-D.pdf
1N914BWT
Виробник: onsemi
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 1664000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+1.06 грн
16000+1.01 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
2N5245_J35Z 2N5245.pdf
2N5245_J35Z
Виробник: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
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2N5246_J35Z 2N5246.pdf
2N5246_J35Z
Виробник: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 7mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
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2N5247_J35Z
2N5247_J35Z
Виробник: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Frequency: 400MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 4dB
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
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2N5950_J35Z 2N5950.pdf
2N5950_J35Z
Виробник: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
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2N5951_J35Z 2N5951.pdf
2N5951_J35Z
Виробник: onsemi
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 13mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
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2N5952_J35Z 2N5952.pdf
2N5952_J35Z
Виробник: onsemi
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 8mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
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2N5953_J35Z 2N5953.pdf
2N5953_J35Z
Виробник: onsemi
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 5mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
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2N7002_NB9G002 2N7000,02(A).pdf
2N7002_NB9G002
Виробник: onsemi
Description: MOSFET N-CH 60V 115MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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4N26M_F132 4N25-28_35-37, H11A1-A5.pdf
4N26M_F132
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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4N32SVM til113m-d.pdf
4N32SVM
Виробник: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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4N33TVM til113m-d.pdf
4N33TVM
Виробник: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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4N35M_F132 4N25-28_35-37%2C%20H11A1-A5.pdf
4N35M_F132
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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4N37M_F132 4N25-28_35-37%2C%20H11A1-A5.pdf
4N37M_F132
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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74LCX373BQX DS_488_74LCX373.pdf
74LCX373BQX
Виробник: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20DQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-DQFN (2.5x4.5)
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74LCX541BQX
74LCX541BQX
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 20DQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-DQFN (2.5x4.5)
Part Status: Obsolete
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74VCX162839MTDX 74VCX162839.pdf
74VCX162839MTDX
Виробник: onsemi
Description: IC REGISTER BUFFER 56-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Register, Multiplexed
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Supplier Device Package: 56-TSSOP
Number of Bits per Element: 20
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74VCX16839MTD 74VCX16839.pdf
74VCX16839MTD
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 56TSSOP
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74VCX16839MTDX 74VCX16839.pdf
74VCX16839MTDX
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 56TSSOP
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BAX16 FAIRS26047-1.pdf?t.download=true&u=5oefqw
BAX16
Виробник: onsemi
Description: DIODE STANDARD 150V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
на замовлення 8216 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.53 грн
38+8.20 грн
100+4.27 грн
500+3.07 грн
1000+2.64 грн
2000+2.46 грн
5000+2.24 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BAX16TR FAIRS26047-1.pdf?t.download=true&u=5oefqw
BAX16TR
Виробник: onsemi
Description: DIODE GEN PURP 150V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+3.03 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BC182B_J35Z BC182B.pdf
BC182B_J35Z
Виробник: onsemi
Description: TRANS NPN 50V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
товару немає в наявності
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BC182LA_J35Z BC182L.pdf
BC182LA_J35Z
Виробник: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BC182LB_J35Z BC182LB.pdf
BC182LB_J35Z
Виробник: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
товару немає в наявності
В кошику  од. на суму  грн.
BC182L_J35Z BC182L.pdf
BC182L_J35Z
Виробник: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
товару немає в наявності
В кошику  од. на суму  грн.
BC182_J35Z BC182.pdf
BC182_J35Z
Виробник: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
товару немає в наявності
В кошику  од. на суму  грн.
BC183C_J35Z BC183C.pdf
BC183C_J35Z
Виробник: onsemi
Description: TRANS NPN 30V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
товару немає в наявності
В кошику  од. на суму  грн.
BC183LC_J35Z BC183.pdf
BC183LC_J35Z
Виробник: onsemi
Description: TRANS NPN 30V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
товару немає в наявності
В кошику  од. на суму  грн.
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