| Фото | Назва | Виробник | Інформація |
Доступність |
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| LC898124EP1XC-MH | onsemi | Description: IC MOTOR DVR OIS AF 27WLCSP |
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MC79L15ACP | onsemi |
 Description: IC REG LINEAR -15V 100MA TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Voltage - Input (Max): -35V Number of Regulators: 1 Supplier Device Package: TO-92 (TO-226) Voltage - Output (Min/Fixed): -15V Part Status: Obsolete PSRR: 39dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) Protection Features: Over Temperature, Short Circuit |
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MMVL809T1G | onsemi |
Description: DIODE SWITCHING 20V SOD-323 Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 6.1pF @ 2V, 1MHz Q @ Vr, F: 75 @ 3V, 500MHz Capacitance Ratio Condition: C2/C8 Supplier Device Package: SOD-323 Voltage - Peak Reverse (Max): 20 V Capacitance Ratio: 2.6 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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MMBV809LT1G | onsemi |
Description: DIODE TUNING SS 20V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 6.1pF @ 2V, 1MHz Q @ Vr, F: 75 @ 3V, 500MHz Capacitance Ratio Condition: C2/C8 Supplier Device Package: SOT-23-3 (TO-236) Voltage - Peak Reverse (Max): 20 V Capacitance Ratio: 2.6 |
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MMBV809LT1 | onsemi |
Description: DIODE TUNING SS 20V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 6.1pF @ 2V, 1MHz Q @ Vr, F: 75 @ 3V, 500MHz Capacitance Ratio Condition: C2/C8 Supplier Device Package: SOT-23-3 (TO-236) Voltage - Peak Reverse (Max): 20 V Capacitance Ratio: 2.6 |
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MMBV809LT1 | onsemi |
Description: DIODE TUNING SS 20V SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 6.1pF @ 2V, 1MHz Q @ Vr, F: 75 @ 3V, 500MHz Capacitance Ratio Condition: C2/C8 Supplier Device Package: SOT-23-3 (TO-236) Voltage - Peak Reverse (Max): 20 V Capacitance Ratio: 2.6 |
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MMBFJ202 | onsemi |
Description: JFET N-CH 40V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23-3 Part Status: Active Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 900 µA @ 20 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MMBFJ202 | onsemi |
Description: JFET N-CH 40V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23-3 Part Status: Active Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 900 µA @ 20 V |
на замовлення 8416 шт: термін постачання 21-31 дні (днів) |
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MMBF4093 | onsemi |
Description: JFET N-CH 40V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23-3 Part Status: Active Power - Max: 350 mW Resistance - RDS(On): 80 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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MMBF4093 | onsemi |
Description: JFET N-CH 40V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23-3 Part Status: Active Power - Max: 350 mW Resistance - RDS(On): 80 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V |
на замовлення 16202 шт: термін постачання 21-31 дні (днів) |
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J112 | onsemi |
Description: JFET N-CH 35V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Supplier Device Package: TO-92-3 Part Status: Active Power - Max: 625 mW Resistance - RDS(On): 50 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V |
на замовлення 9200 шт: термін постачання 21-31 дні (днів) |
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NCV20231SN2T1G | onsemi |
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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NCV20231SN2T1G | onsemi |
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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NCV20231SQ3T2G | onsemi |
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NCV20231SQ3T2G | onsemi |
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NCS20231XV53T2G | onsemi |
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NCS20231XV53T2G | onsemi |
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NCS20231SN2T1G | onsemi |
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NCS20231SN2T1G | onsemi |
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M |
на замовлення 23985 шт: термін постачання 21-31 дні (днів) |
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1N4729A | onsemi |
Description: DIODE ZENER 3.6V 1W DO41 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-41 Part Status: Obsolete Power - Max: 1 W Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
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| NSVG3109SG6T1G | onsemi |
Description: IC AMP GPS 100MHZ-3.6GHZ SC88FL Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Frequency: 100MHz ~ 3.6GHz RF Type: General Purpose Voltage - Supply: 2.7V ~ 3V Gain: 27dB Current - Supply: 16mA Noise Figure: 4.3dB P1dB: 6.4dBm Test Frequency: 1GHz Supplier Device Package: SC-88FL/MCPH6 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RFP15N05L | onsemi |
Description: MOSFET N-CH 50V 15A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
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FAN5346S30X-ON | onsemi |
Description: LED DRIVER, SERIES BOOST, W/PWM |
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| 2N3014 | onsemi | Description: TRANS NPN 20V 0.2A TO52-3 |
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| ISL9V5045S3ST-F085C | onsemi |
Description: ECOSPARK1 IGN-IGBT TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: -/10.8µs Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 51 A Voltage - Collector Emitter Breakdown (Max): 480 V Power - Max: 300 W |
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NC7S14L6X-L22175 | onsemi |
Description: IC INVERTER 1CH 1-INP 6MICROPAK Packaging: Tape & Reel (TR) Features: Schmitt Trigger Input Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 1 Supplier Device Package: 6-MicroPak Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.7V ~ 2.24V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
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NCP81075MTTXG | onsemi |
Description: IC GATE DRVR HI/LOW SIDE 10WDFN Packaging: Tape & Reel (TR) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 8.5V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 10-WDFN (4x4) Rise / Fall Time (Typ): 8ns, 7ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.7V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
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NCP81075MTTXG | onsemi |
Description: IC GATE DRVR HI/LOW SIDE 10WDFN Packaging: Cut Tape (CT) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 8.5V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 10-WDFN (4x4) Rise / Fall Time (Typ): 8ns, 7ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.7V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2415 шт: термін постачання 21-31 дні (днів) |
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MOC8102 | onsemi |
Description: OPTOISOLATOR 5.3KV TRANS 6-DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5300Vrms Current Transfer Ratio (Min): 73% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 117% @ 10mA Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 1µs, 2µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 100 mA |
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FQPF9P25-T | onsemi |
Description: MOSFET P-CH 250V 6A TO220F-3 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 3A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V |
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NC7S86M5X-L22090 | onsemi |
Description: IC GATE XOR 1CH 2-INP SOT23-5 |
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NC7S86L6X-L22175 | onsemi |
Description: IC GATE XOR 1CH 2-INP 6MICROPAK |
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BAW76 | onsemi |
Description: DIODE GEN PURP 75V 300MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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CS8481YDPR5 | onsemi |
Description: IC REG LINEAR 3.3V/5V D2PAK-5 |
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CS8481YDPR5 | onsemi |
Description: IC REG LINEAR 3.3V/5V D2PAK-5 |
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SN74LS126AN | onsemi |
Description: IC BUFFER NON-INVERT 5.25V 14DIP |
на замовлення 16155 шт: термін постачання 21-31 дні (днів) |
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MC12026ADR2G | onsemi |
Description: IC PRESCALER 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: ECL Frequency - Max: 1.1GHz Type: Prescaler Input: CMOS, TTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: No Divider/Multiplier: Yes/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
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MC12026ADR2G | onsemi |
Description: IC PRESCALER 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: ECL Frequency - Max: 1.1GHz Type: Prescaler Input: CMOS, TTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: No Divider/Multiplier: Yes/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 3941 шт: термін постачання 21-31 дні (днів) |
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FQA13N50CF | onsemi |
Description: MOSFET N-CH 500V 15A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V Power Dissipation (Max): 218W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
на замовлення 411 шт: термін постачання 21-31 дні (днів) |
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FQA13N50CF | onsemi |
Description: MOSFET N-CH 500V 15A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V Power Dissipation (Max): 218W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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MMBF4416 | onsemi |
Description: RF MOSFET JFET 15V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Current Rating (Amps): 15mA Mounting Type: Surface Mount Frequency: 100MHz Configuration: N-Channel Gain: 18dB Technology: JFET Noise Figure: 2dB Supplier Device Package: SOT-23-3 Part Status: Active Voltage - Rated: 30 V Voltage - Test: 15 V Current - Test: 5 mA |
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NTST40H120CTG | onsemi |
Description: DIODE ARR SCHOT 120V 20A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 20 A Current - Reverse Leakage @ Vr: 65 µA @ 120 V |
на замовлення 39550 шт: термін постачання 21-31 дні (днів) |
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UC3843BVDR2G | onsemi |
Description: IC REG CTRLR FLYBACK 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up, Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: Up to 500kHz Topology: Boost, Flyback Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V Supplier Device Package: 14-SOIC Synchronous Rectifier: No Control Features: Frequency Control Output Phases: 1 Duty Cycle (Max): 96% Clock Sync: No Part Status: Active Number of Outputs: 1 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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UC3843BVDR2G | onsemi |
Description: IC REG CTRLR FLYBACK 14SOIC Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up, Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: Up to 500kHz Topology: Boost, Flyback Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V Supplier Device Package: 14-SOIC Synchronous Rectifier: No Control Features: Frequency Control Output Phases: 1 Duty Cycle (Max): 96% Clock Sync: No Part Status: Active Number of Outputs: 1 |
на замовлення 12475 шт: термін постачання 21-31 дні (днів) |
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ZTX749 | onsemi |
Description: TRANS PNP 25V 2A TO226 |
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SZMMBZ5257BLT1G | onsemi |
Description: DIODE ZENER 33V 225MW SOT23-3 |
на замовлення 11205 шт: термін постачання 21-31 дні (днів) |
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MMSZ5257B | onsemi |
Description: DIODE ZENER 33V 500MW SOD123 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: SOD-123 Part Status: Obsolete Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
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MMSZ5257B | onsemi |
Description: DIODE ZENER 33V 500MW SOD123 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: SOD-123 Part Status: Obsolete Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
товар відсутній |
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| CPH3148-TL-E | onsemi |
Description: TRANS PNP 100V 2A 3CPH Packaging: Bulk Package / Case: SC-96 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 260MHz Supplier Device Package: 3-CPH Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 900 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MTD3055VL | onsemi |
Description: MOSFET N-CH 60V 12A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V Power Dissipation (Max): 3.9W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V |
товар відсутній |
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MTD3055VL | onsemi |
Description: MOSFET N-CH 60V 12A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V Power Dissipation (Max): 3.9W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V |
товар відсутній |
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NB7NPQ1004MMTTWG | onsemi |
Description: IC REDRIVER 2-PORT LIN 42WQFN |
товар відсутній |
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NB7NPQ1004MMTTWG | onsemi |
Description: IC REDRIVER 2-PORT LIN 42WQFN |
на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
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NCP1618FDR2G | onsemi |
Description: MULTIMODE (CRM-CCM) POWER FACTOR Packaging: Tape & Reel (TR) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 9.5V ~ 35V Frequency - Switching: 25kHz ~ 130kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 9-SOIC Part Status: Active Current - Startup: 1.6 mA |
товар відсутній |
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NCP1618FDR2G | onsemi |
Description: MULTIMODE (CRM-CCM) POWER FACTOR Packaging: Cut Tape (CT) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 9.5V ~ 35V Frequency - Switching: 25kHz ~ 130kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 9-SOIC Part Status: Active Current - Startup: 1.6 mA |
на замовлення 2495 шт: термін постачання 21-31 дні (днів) |
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NSS1C200MZ4T3G | onsemi |
Description: TRANS PNP 100V 2A SOT223 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW |
на замовлення 101694 шт: термін постачання 21-31 дні (днів) |
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CPH5520-TL-E | onsemi |
Description: TRANS NPN/PNP 80V/50V 2A 5CPH Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Transistor Type: NPN, PNP (Emitter Coupled) Operating Temperature: 150°C (TJ) Power - Max: 1.2W Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V, 50V Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 420MHz Supplier Device Package: 5-CPH Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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CPH5520-TL-E | onsemi |
Description: TRANS NPN/PNP 80V/50V 2A 5CPH Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Transistor Type: NPN, PNP (Emitter Coupled) Operating Temperature: 150°C (TJ) Power - Max: 1.2W Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V, 50V Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 420MHz Supplier Device Package: 5-CPH Part Status: Active |
на замовлення 11930 шт: термін постачання 21-31 дні (днів) |
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FCPF4300N80Z | onsemi |
Description: MOSFET N-CH 800V 1.6A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V Power Dissipation (Max): 19.2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 160µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V |
на замовлення 993 шт: термін постачання 21-31 дні (днів) |
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NSR0340V2T5G | onsemi |
Description: DIODE SCHOTTKY 40V 250MA SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA Current - Reverse Leakage @ Vr: 6 µA @ 40 V |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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| MC79L15ACP |
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Виробник: onsemi
Description: IC REG LINEAR -15V 100MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -15V
Part Status: Obsolete
PSRR: 39dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR -15V 100MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -15V
Part Status: Obsolete
PSRR: 39dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
товар відсутній
| MMVL809T1G |
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Виробник: onsemi
Description: DIODE SWITCHING 20V SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 6.1pF @ 2V, 1MHz
Q @ Vr, F: 75 @ 3V, 500MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: SOD-323
Voltage - Peak Reverse (Max): 20 V
Capacitance Ratio: 2.6
Description: DIODE SWITCHING 20V SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 6.1pF @ 2V, 1MHz
Q @ Vr, F: 75 @ 3V, 500MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: SOD-323
Voltage - Peak Reverse (Max): 20 V
Capacitance Ratio: 2.6
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2664+ | 7.42 грн |
| MMBV809LT1G |
|
Виробник: onsemi
Description: DIODE TUNING SS 20V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.1pF @ 2V, 1MHz
Q @ Vr, F: 75 @ 3V, 500MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 20 V
Capacitance Ratio: 2.6
Description: DIODE TUNING SS 20V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.1pF @ 2V, 1MHz
Q @ Vr, F: 75 @ 3V, 500MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 20 V
Capacitance Ratio: 2.6
товар відсутній
| MMBV809LT1 |
|
Виробник: onsemi
Description: DIODE TUNING SS 20V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.1pF @ 2V, 1MHz
Q @ Vr, F: 75 @ 3V, 500MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 20 V
Capacitance Ratio: 2.6
Description: DIODE TUNING SS 20V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.1pF @ 2V, 1MHz
Q @ Vr, F: 75 @ 3V, 500MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 20 V
Capacitance Ratio: 2.6
товар відсутній
| MMBV809LT1 |
|
Виробник: onsemi
Description: DIODE TUNING SS 20V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.1pF @ 2V, 1MHz
Q @ Vr, F: 75 @ 3V, 500MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 20 V
Capacitance Ratio: 2.6
Description: DIODE TUNING SS 20V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.1pF @ 2V, 1MHz
Q @ Vr, F: 75 @ 3V, 500MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 20 V
Capacitance Ratio: 2.6
товар відсутній
| MMBFJ202 |
|
Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 900 µA @ 20 V
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 900 µA @ 20 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.82 грн |
| 6000+ | 6.42 грн |
| MMBFJ202 |
|
Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 900 µA @ 20 V
Description: JFET N-CH 40V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 900 µA @ 20 V
на замовлення 8416 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.57 грн |
| 13+ | 21.08 грн |
| 100+ | 10.65 грн |
| 500+ | 8.85 грн |
| 1000+ | 6.89 грн |
| MMBF4093 |
|
Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 350 mW
Resistance - RDS(On): 80 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 350 mW
Resistance - RDS(On): 80 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.87 грн |
| 6000+ | 8.19 грн |
| 9000+ | 7.37 грн |
| MMBF4093 |
|
Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 350 mW
Resistance - RDS(On): 80 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
Description: JFET N-CH 40V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 350 mW
Resistance - RDS(On): 80 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
на замовлення 16202 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 32.7 грн |
| 12+ | 24.58 грн |
| 100+ | 14.74 грн |
| 500+ | 12.81 грн |
| 1000+ | 8.71 грн |
| J112 |
|
Виробник: onsemi
Description: JFET N-CH 35V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Description: JFET N-CH 35V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
на замовлення 9200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 27.73 грн |
| 14+ | 20.4 грн |
| 100+ | 12.25 грн |
| 1000+ | 7.24 грн |
| 5000+ | 6.39 грн |
| NCV20231SN2T1G |
|
Виробник: onsemi
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 31.05 грн |
| 6000+ | 28.41 грн |
| 15000+ | 27.34 грн |
| NCV20231SN2T1G |
|
Виробник: onsemi
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 73.22 грн |
| 10+ | 62.98 грн |
| 25+ | 59.8 грн |
| 100+ | 46.1 грн |
| 250+ | 43.1 грн |
| 500+ | 38.08 грн |
| 1000+ | 29.57 грн |
| NCV20231SQ3T2G |
|
Виробник: onsemi
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 31.05 грн |
| 6000+ | 28.41 грн |
| 15000+ | 27.34 грн |
| NCV20231SQ3T2G |
|
Виробник: onsemi
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 73.22 грн |
| 10+ | 62.98 грн |
| 25+ | 59.8 грн |
| 100+ | 46.1 грн |
| 250+ | 43.1 грн |
| 500+ | 38.08 грн |
| 1000+ | 29.57 грн |
| NCS20231XV53T2G |
|
Виробник: onsemi
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 27 грн |
| NCS20231XV53T2G |
|
Виробник: onsemi
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.98 грн |
| 10+ | 54.83 грн |
| 25+ | 52.03 грн |
| 100+ | 40.09 грн |
| 250+ | 37.48 грн |
| 500+ | 33.12 грн |
| 1000+ | 25.72 грн |
| NCS20231SN2T1G |
|
Виробник: onsemi
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 27 грн |
| 6000+ | 24.7 грн |
| 15000+ | 23.77 грн |
| NCS20231SN2T1G |
|
Виробник: onsemi
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
Description: OPERATIONAL AMPLIFIER, 36 V, 3 M
на замовлення 23985 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.98 грн |
| 10+ | 54.83 грн |
| 25+ | 52.03 грн |
| 100+ | 40.09 грн |
| 250+ | 37.48 грн |
| 500+ | 33.12 грн |
| 1000+ | 25.72 грн |
| 1N4729A |
|
Виробник: onsemi
Description: DIODE ZENER 3.6V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: DIODE ZENER 3.6V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
товар відсутній
| NSVG3109SG6T1G |
Виробник: onsemi
Description: IC AMP GPS 100MHZ-3.6GHZ SC88FL
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3.6GHz
RF Type: General Purpose
Voltage - Supply: 2.7V ~ 3V
Gain: 27dB
Current - Supply: 16mA
Noise Figure: 4.3dB
P1dB: 6.4dBm
Test Frequency: 1GHz
Supplier Device Package: SC-88FL/MCPH6
Grade: Automotive
Qualification: AEC-Q100
Description: IC AMP GPS 100MHZ-3.6GHZ SC88FL
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3.6GHz
RF Type: General Purpose
Voltage - Supply: 2.7V ~ 3V
Gain: 27dB
Current - Supply: 16mA
Noise Figure: 4.3dB
P1dB: 6.4dBm
Test Frequency: 1GHz
Supplier Device Package: SC-88FL/MCPH6
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.14 грн |
| RFP15N05L |
|
Виробник: onsemi
Description: MOSFET N-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET N-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
товар відсутній
| ISL9V5045S3ST-F085C |
Виробник: onsemi
Description: ECOSPARK1 IGN-IGBT TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Description: ECOSPARK1 IGN-IGBT TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
товар відсутній
| NC7S14L6X-L22175 |
|
Виробник: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger Input
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.7V ~ 2.24V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger Input
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.7V ~ 2.24V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
| NCP81075MTTXG |
|
Виробник: onsemi
Description: IC GATE DRVR HI/LOW SIDE 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Voltage - Supply: 8.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 10-WDFN (4x4)
Rise / Fall Time (Typ): 8ns, 7ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Voltage - Supply: 8.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 10-WDFN (4x4)
Rise / Fall Time (Typ): 8ns, 7ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
| NCP81075MTTXG |
|
Виробник: onsemi
Description: IC GATE DRVR HI/LOW SIDE 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Voltage - Supply: 8.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 10-WDFN (4x4)
Rise / Fall Time (Typ): 8ns, 7ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Voltage - Supply: 8.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 10-WDFN (4x4)
Rise / Fall Time (Typ): 8ns, 7ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2415 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 211.85 грн |
| 10+ | 183.4 грн |
| 25+ | 173.33 грн |
| 100+ | 133.76 грн |
| 250+ | 120.03 грн |
| 500+ | 115.69 грн |
| 1000+ | 94.59 грн |
| MOC8102 |
|
Виробник: onsemi
Description: OPTOISOLATOR 5.3KV TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 73% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 117% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Description: OPTOISOLATOR 5.3KV TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 73% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 117% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
товар відсутній
| FQPF9P25-T |
Виробник: onsemi
Description: MOSFET P-CH 250V 6A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Description: MOSFET P-CH 250V 6A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
товар відсутній
| BAW76 |
|
Виробник: onsemi
Description: DIODE GEN PURP 75V 300MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 75V 300MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
| SN74LS126AN |
|
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.25V 14DIP
Description: IC BUFFER NON-INVERT 5.25V 14DIP
на замовлення 16155 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 795+ | 24.69 грн |
| MC12026ADR2G |
|
Виробник: onsemi
Description: IC PRESCALER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 1.1GHz
Type: Prescaler
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: No
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC PRESCALER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 1.1GHz
Type: Prescaler
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: No
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| MC12026ADR2G |
|
Виробник: onsemi
Description: IC PRESCALER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 1.1GHz
Type: Prescaler
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: No
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC PRESCALER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 1.1GHz
Type: Prescaler
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: No
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 3941 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 364.69 грн |
| 10+ | 315.66 грн |
| 25+ | 298.47 грн |
| 100+ | 242.75 грн |
| 250+ | 230.31 грн |
| 500+ | 206.65 грн |
| 1000+ | 171.43 грн |
| FQA13N50CF |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 15A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 15A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 411 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 229.62 грн |
| 10+ | 186.07 грн |
| 100+ | 150.48 грн |
| FQA13N50CF |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 15A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 15A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
| MMBF4416 |
|
Виробник: onsemi
Description: RF MOSFET JFET 15V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Gain: 18dB
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - Rated: 30 V
Voltage - Test: 15 V
Current - Test: 5 mA
Description: RF MOSFET JFET 15V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Gain: 18dB
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - Rated: 30 V
Voltage - Test: 15 V
Current - Test: 5 mA
товар відсутній
| NTST40H120CTG |
|
Виробник: onsemi
Description: DIODE ARR SCHOT 120V 20A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 20 A
Current - Reverse Leakage @ Vr: 65 µA @ 120 V
Description: DIODE ARR SCHOT 120V 20A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 20 A
Current - Reverse Leakage @ Vr: 65 µA @ 120 V
на замовлення 39550 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 310+ | 63.03 грн |
| UC3843BVDR2G |
|
Виробник: onsemi
Description: IC REG CTRLR FLYBACK 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
Description: IC REG CTRLR FLYBACK 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 18.64 грн |
| 5000+ | 17.28 грн |
| UC3843BVDR2G |
|
Виробник: onsemi
Description: IC REG CTRLR FLYBACK 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
Description: IC REG CTRLR FLYBACK 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
на замовлення 12475 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 51.9 грн |
| 10+ | 43.88 грн |
| 25+ | 41.21 грн |
| 100+ | 29.31 грн |
| 250+ | 24.95 грн |
| 500+ | 23.7 грн |
| 1000+ | 17.79 грн |
| SZMMBZ5257BLT1G |
|
Виробник: onsemi
Description: DIODE ZENER 33V 225MW SOT23-3
Description: DIODE ZENER 33V 225MW SOT23-3
на замовлення 11205 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 17.06 грн |
| 21+ | 13.28 грн |
| 100+ | 7.03 грн |
| 500+ | 4.34 грн |
| 1000+ | 2.95 грн |
| MMSZ5257B |
|
Виробник: onsemi
Description: DIODE ZENER 33V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE ZENER 33V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товар відсутній
| MMSZ5257B |
|
Виробник: onsemi
Description: DIODE ZENER 33V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE ZENER 33V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товар відсутній
| CPH3148-TL-E |
Виробник: onsemi
Description: TRANS PNP 100V 2A 3CPH
Packaging: Bulk
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 260MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Description: TRANS PNP 100V 2A 3CPH
Packaging: Bulk
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 260MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 740+ | 29.15 грн |
| MTD3055VL |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
товар відсутній
| MTD3055VL |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
товар відсутній
| NB7NPQ1004MMTTWG |
|
Виробник: onsemi
Description: IC REDRIVER 2-PORT LIN 42WQFN
Description: IC REDRIVER 2-PORT LIN 42WQFN
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 250.95 грн |
| 10+ | 217.08 грн |
| 25+ | 205.21 грн |
| 100+ | 166.91 грн |
| 250+ | 158.35 грн |
| 500+ | 142.08 грн |
| 1000+ | 117.87 грн |
| 2500+ | 111.97 грн |
| NCP1618FDR2G |
|
Виробник: onsemi
Description: MULTIMODE (CRM-CCM) POWER FACTOR
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 35V
Frequency - Switching: 25kHz ~ 130kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 1.6 mA
Description: MULTIMODE (CRM-CCM) POWER FACTOR
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 35V
Frequency - Switching: 25kHz ~ 130kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 1.6 mA
товар відсутній
| NCP1618FDR2G |
|
Виробник: onsemi
Description: MULTIMODE (CRM-CCM) POWER FACTOR
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 35V
Frequency - Switching: 25kHz ~ 130kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 1.6 mA
Description: MULTIMODE (CRM-CCM) POWER FACTOR
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 35V
Frequency - Switching: 25kHz ~ 130kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 1.6 mA
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.18 грн |
| 10+ | 71.4 грн |
| 25+ | 67.77 грн |
| 100+ | 48.83 грн |
| 250+ | 43.15 грн |
| 500+ | 40.88 грн |
| 1000+ | 31.27 грн |
| NSS1C200MZ4T3G |
|
Виробник: onsemi
Description: TRANS PNP 100V 2A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Description: TRANS PNP 100V 2A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
на замовлення 101694 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1596+ | 13.51 грн |
| CPH5520-TL-E |
|
Виробник: onsemi
Description: TRANS NPN/PNP 80V/50V 2A 5CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: NPN, PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V, 50V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 5-CPH
Part Status: Active
Description: TRANS NPN/PNP 80V/50V 2A 5CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: NPN, PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V, 50V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 5-CPH
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.17 грн |
| 6000+ | 18.08 грн |
| CPH5520-TL-E |
|
Виробник: onsemi
Description: TRANS NPN/PNP 80V/50V 2A 5CPH
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: NPN, PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V, 50V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 5-CPH
Part Status: Active
Description: TRANS NPN/PNP 80V/50V 2A 5CPH
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: NPN, PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V, 50V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 5-CPH
Part Status: Active
на замовлення 11930 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 51.9 грн |
| 10+ | 44.22 грн |
| 100+ | 33.89 грн |
| 500+ | 25.14 грн |
| 1000+ | 20.11 грн |
| FCPF4300N80Z |
|
Виробник: onsemi
Description: MOSFET N-CH 800V 1.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V
Power Dissipation (Max): 19.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 160µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V
Description: MOSFET N-CH 800V 1.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V
Power Dissipation (Max): 19.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 160µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V
на замовлення 993 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 154.98 грн |
| 10+ | 124.18 грн |
| 100+ | 98.8 грн |
| 500+ | 78.46 грн |
| NSR0340V2T5G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 4.64 грн |
| 16000+ | 3.86 грн |