Продукція > PANJIT INTERNATIONAL INC. > Всі товари виробника PANJIT INTERNATIONAL INC. (11671) > Сторінка 147 з 195

Обрати Сторінку:   [  << Попередня Сторінка ]  1 19 38 57 76 95 114 133 142 143 144 145 146 147 148 149 150 151 152 171 190 195  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
ER201_R2_00001 ER201_R2_00001 Panjit International Inc. ER200_SERIES.pdf Description: DIODE GEN PURP 100V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
ER201A_R2_00001 ER201A_R2_00001 Panjit International Inc. ER200_SERIES.pdf Description: DIODE GEN PURP 150V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
товару немає в наявності
В кошику  од. на суму  грн.
ER201A_R2_00001 ER201A_R2_00001 Panjit International Inc. ER200_SERIES.pdf Description: DIODE GEN PURP 150V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
товару немає в наявності
В кошику  од. на суму  грн.
STR30100CB_R2_00001 STR30100CB_R2_00001 Panjit International Inc. STR30100CB.pdf Description: 100V ,SCHOTTKY,TO-263,30A
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
800+79.01 грн
1600+60.07 грн
2400+58.32 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
STR30100CB_R2_00001 STR30100CB_R2_00001 Panjit International Inc. STR30100CB.pdf Description: 100V ,SCHOTTKY,TO-263,30A
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
3+137.26 грн
10+118.17 грн
100+92.10 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STR60100CB_R2_00001 STR60100CB_R2_00001 Panjit International Inc. STR60100CB.pdf Description: DIODE ARR SCHOTT 100V 30A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+68.73 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
STR60100CB_R2_00001 STR60100CB_R2_00001 Panjit International Inc. STR60100CB.pdf Description: DIODE ARR SCHOTT 100V 30A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 2653 шт:
термін постачання 21-31 дні (днів)
2+201.37 грн
10+125.61 грн
100+86.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMB055N08NS1_R2_00601 PSMB055N08NS1_R2_00601 Panjit International Inc. PSMB055N08NS1.pdf Description: 80V/ 5.5MOHM / MV MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMB055N08NS1_R2_00601 PSMB055N08NS1_R2_00601 Panjit International Inc. PSMB055N08NS1.pdf Description: 80V/ 5.5MOHM / MV MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
3+145.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STZ23C5V6_R1_00001 STZ23C5V6_R1_00001 Panjit International Inc. STZ23C5V6.pdf Description: SURFACE MOUNT ZENER DIODES
Packaging: Tape & Reel (TR)
Tolerance: ±5.45%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
товару немає в наявності
В кошику  од. на суму  грн.
STZ23C5V6_R1_00001 STZ23C5V6_R1_00001 Panjit International Inc. STZ23C5V6.pdf Description: SURFACE MOUNT ZENER DIODES
Packaging: Cut Tape (CT)
Tolerance: ±5.45%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
17+19.73 грн
21+15.51 грн
100+8.22 грн
500+5.07 грн
1000+3.45 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AZ23C5V6_R1_00001 AZ23C5V6_R1_00001 Panjit International Inc. AZ23C2V4_SERIES.pdf Description: DUAL SURFACE MOUNT ZENER DIODES
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
товару немає в наявності
В кошику  од. на суму  грн.
AZ23C5V6_R1_00001 AZ23C5V6_R1_00001 Panjit International Inc. AZ23C2V4_SERIES.pdf Description: DUAL SURFACE MOUNT ZENER DIODES
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
16+20.55 грн
20+16.23 грн
100+8.63 грн
500+5.33 грн
1000+3.62 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
AZ23C5V6P_R1_00001 AZ23C5V6P_R1_00001 Panjit International Inc. AZ23C2V4_SERIES.pdf Description: SURFACE MOUNT ZENER DIODES
Packaging: Tape & Reel (TR)
Tolerance: ±5.45%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
товару немає в наявності
В кошику  од. на суму  грн.
AZ23C5V6P_R1_00001 AZ23C5V6P_R1_00001 Panjit International Inc. AZ23C2V4_SERIES.pdf Description: SURFACE MOUNT ZENER DIODES
Packaging: Cut Tape (CT)
Tolerance: ±5.45%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
на замовлення 1978 шт:
термін постачання 21-31 дні (днів)
18+18.90 грн
22+14.80 грн
100+7.84 грн
500+4.84 грн
1000+3.29 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
1.5SMC250CA_R1_00001 1.5SMC250CA_R1_00001 Panjit International Inc. 1.5SMC_SERIES.pdf Description: TVS DIODE 214VWM 344VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC250CA_R1_00001 1.5SMC250CA_R1_00001 Panjit International Inc. 1.5SMC_SERIES.pdf Description: TVS DIODE 214VWM 344VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4465AP-AU_R2_000A1 PJQ4465AP-AU_R2_000A1 Panjit International Inc. PJQ4465AP-AU.pdf Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4465AP-AU_R2_000A1 PJQ4465AP-AU_R2_000A1 Panjit International Inc. PJQ4465AP-AU.pdf Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
6+57.53 грн
10+37.20 грн
100+25.52 грн
500+18.94 грн
1000+17.29 грн
2000+15.89 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PJQ4443P-AU_R2_000A1 PJQ4443P-AU_R2_000A1 Panjit International Inc. PJQ4443P-AU.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4443P-AU_R2_000A1 PJQ4443P-AU_R2_000A1 Panjit International Inc. PJQ4443P-AU.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
на замовлення 1002 шт:
термін постачання 21-31 дні (днів)
5+79.73 грн
10+67.43 грн
100+51.72 грн
500+38.37 грн
1000+30.70 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
PJQ4441P-AU_R2_000A1 PJQ4441P-AU_R2_000A1 Panjit International Inc. PJQ4441P-AU.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4441P-AU_R2_000A1 PJQ4441P-AU_R2_000A1 Panjit International Inc. PJQ4441P-AU.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4280 шт:
термін постачання 21-31 дні (днів)
4+85.48 грн
10+51.21 грн
100+33.52 грн
500+24.33 грн
1000+22.03 грн
2000+20.10 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PJQ4404P-AU_R2_000A1 PJQ4404P-AU_R2_000A1 Panjit International Inc. PJQ4404P-AU.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4404P-AU_R2_000A1 PJQ4404P-AU_R2_000A1 Panjit International Inc. PJQ4404P-AU.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3026 шт:
термін постачання 21-31 дні (днів)
7+47.67 грн
10+39.10 грн
100+27.21 грн
500+19.94 грн
1000+16.21 грн
2000+14.49 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PJQ4441P_R2_00001 PJQ4441P_R2_00001 Panjit International Inc. PJQ4441P.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4441P_R2_00001 PJQ4441P_R2_00001 Panjit International Inc. PJQ4441P.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4404P_R2_00001 PJQ4404P_R2_00001 Panjit International Inc. PJQ4404P.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+13.17 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
PJQ4404P_R2_00001 PJQ4404P_R2_00001 Panjit International Inc. PJQ4404P.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
7+48.49 грн
11+31.42 грн
100+21.43 грн
500+15.83 грн
1000+14.42 грн
2000+13.22 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PJQ4403P_R2_00001 PJQ4403P_R2_00001 Panjit International Inc. PJQ4403P.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
5000+14.95 грн
10000+13.83 грн
15000+13.25 грн
25000+11.84 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
PJQ4403P_R2_00001 PJQ4403P_R2_00001 Panjit International Inc. PJQ4403P.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
на замовлення 36229 шт:
термін постачання 21-31 дні (днів)
7+48.49 грн
10+35.62 грн
100+24.35 грн
500+17.99 грн
1000+14.86 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PJQ4446P-AU_R2_000A1 PJQ4446P-AU_R2_000A1 Panjit International Inc. PJQ4446P-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4446P-AU_R2_000A1 PJQ4446P-AU_R2_000A1 Panjit International Inc. PJQ4446P-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
6+63.29 грн
10+53.27 грн
100+36.91 грн
500+28.93 грн
1000+24.62 грн
2000+21.93 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
UF2B_R1_00001 UF2B_R1_00001 Panjit International Inc. UF2A_SERIES.pdf Description: DIODE GEN PURP 100V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+10.37 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
UF2B_R1_00001 UF2B_R1_00001 Panjit International Inc. UF2A_SERIES.pdf Description: DIODE GEN PURP 100V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
10+32.88 грн
15+22.32 грн
100+11.26 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMBJ90A_R1_00001 P6SMBJ90A_R1_00001 Panjit International Inc. P6SMBJ_SERIES.pdf Description: TVS DIODE 90VWM 146VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ90A_R1_00001 P6SMBJ90A_R1_00001 Panjit International Inc. P6SMBJ_SERIES.pdf Description: TVS DIODE 90VWM 146VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 790 шт:
термін постачання 21-31 дні (днів)
7+50.14 грн
10+32.45 грн
100+22.26 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
P6SMBJ90AS_R1_00001 P6SMBJ90AS_R1_00001 Panjit International Inc. P6SMB_SERIES.pdf Description: TVS DIODE 90VWM 147VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 147V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ90AS_R1_00001 P6SMBJ90AS_R1_00001 Panjit International Inc. P6SMB_SERIES.pdf Description: TVS DIODE 90VWM 147VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 147V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5462A_R2_00001 PJQ5462A_R2_00001 Panjit International Inc. PJQ5462A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5462A_R2_00001 PJQ5462A_R2_00001 Panjit International Inc. PJQ5462A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
на замовлення 2846 шт:
термін постачання 21-31 дні (днів)
5+78.90 грн
10+47.49 грн
100+30.95 грн
500+22.39 грн
1000+20.25 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
PJQ5462A-AU_R2_000A1 PJQ5462A-AU_R2_000A1 Panjit International Inc. PJQ5462A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5462A-AU_R2_000A1 PJQ5462A-AU_R2_000A1 Panjit International Inc. PJQ5462A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5336 шт:
термін постачання 21-31 дні (днів)
3+129.04 грн
10+79.15 грн
100+52.91 грн
500+39.11 грн
1000+35.71 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
P6SMBJ22CA_R1_00001 P6SMBJ22CA_R1_00001 Panjit International Inc. P6SMBJ_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ22CA_R1_00001 P6SMBJ22CA_R1_00001 Panjit International Inc. P6SMBJ_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
STR60100CT_T0_00001 STR60100CT_T0_00001 Panjit International Inc. STR60100CT.pdf Description: DIODE ARR SCHOT 100V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)
2+198.08 грн
50+94.55 грн
100+85.16 грн
500+64.48 грн
1000+59.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MMSZ5234B-AU_R1_000A1 MMSZ5234B-AU_R1_000A1 Panjit International Inc. MMSZ5234B-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MMSZ5234B-AU_R1_000A1 MMSZ5234B-AU_R1_000A1 Panjit International Inc. MMSZ5234B-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
17+19.73 грн
21+15.75 грн
100+8.37 грн
500+5.16 грн
1000+3.51 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
MMSZ5234BS_R1_00001 MMSZ5234BS_R1_00001 Panjit International Inc. Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
товару немає в наявності
В кошику  од. на суму  грн.
MMSZ5234BS_R1_00001 MMSZ5234BS_R1_00001 Panjit International Inc. Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
на замовлення 4499 шт:
термін постачання 21-31 дні (днів)
22+15.62 грн
30+10.68 грн
100+5.77 грн
500+4.26 грн
1000+2.95 грн
2000+2.45 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
MMBZ5246B_R1_00001 MMBZ5246B_R1_00001 Panjit International Inc. MMBZ5221B_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
товару немає в наявності
В кошику  од. на суму  грн.
MMBZ5246B_R1_00001 MMBZ5246B_R1_00001 Panjit International Inc. MMBZ5221B_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
на замовлення 2736 шт:
термін постачання 21-31 дні (днів)
24+13.97 грн
34+9.50 грн
100+5.11 грн
500+3.77 грн
1000+2.62 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
ER1006CT_T0_00001 ER1006CT_T0_00001 Panjit International Inc. ER1000CT_SERIES.pdf Description: DIODE ARRAY GP 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 1890 шт:
термін постачання 21-31 дні (днів)
6+61.64 грн
10+51.37 грн
100+35.58 грн
500+27.90 грн
1000+23.74 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MURC4J_R1_00001 MURC4J_R1_00001 Panjit International Inc. MURC4J_SERIES.pdf Description: SMC, SUPER
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MURC4J_R1_00001 MURC4J_R1_00001 Panjit International Inc. MURC4J_SERIES.pdf Description: SMC, SUPER
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 706 шт:
термін постачання 21-31 дні (днів)
6+57.53 грн
10+34.19 грн
100+22.08 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MURC4JI_R1_00001 MURC4JI_R1_00001 Panjit International Inc. MURC4JI_SERIES.pdf Description: SUPERFAST RECOVERY RECTIFIERS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MURC4JI_R1_00001 MURC4JI_R1_00001 Panjit International Inc. MURC4JI_SERIES.pdf Description: SUPERFAST RECOVERY RECTIFIERS
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
6+55.07 грн
10+33.00 грн
100+21.27 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SBT10120UFCT_T0_00001 SBT10120UFCT_T0_00001 Panjit International Inc. Description: EXTREME LOW VF SCHOTTKY BARRIER
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
MMSZ5262B_R1_00001 MMSZ5262B_R1_00001 Panjit International Inc. MMSZ5221B_SERIES.pdf Description: SOD-123, ZENER
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+2.72 грн
6000+2.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MMSZ5262B_R1_00001 MMSZ5262B_R1_00001 Panjit International Inc. MMSZ5221B_SERIES.pdf Description: SOD-123, ZENER
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
на замовлення 8940 шт:
термін постачання 21-31 дні (днів)
22+15.62 грн
24+13.46 грн
100+7.34 грн
500+4.24 грн
1000+2.89 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
ER201_R2_00001 ER200_SERIES.pdf
ER201_R2_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 100V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
ER201A_R2_00001 ER200_SERIES.pdf
ER201A_R2_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 150V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
товару немає в наявності
В кошику  од. на суму  грн.
ER201A_R2_00001 ER200_SERIES.pdf
ER201A_R2_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 150V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
товару немає в наявності
В кошику  од. на суму  грн.
STR30100CB_R2_00001 STR30100CB.pdf
STR30100CB_R2_00001
Виробник: Panjit International Inc.
Description: 100V ,SCHOTTKY,TO-263,30A
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+79.01 грн
1600+60.07 грн
2400+58.32 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
STR30100CB_R2_00001 STR30100CB.pdf
STR30100CB_R2_00001
Виробник: Panjit International Inc.
Description: 100V ,SCHOTTKY,TO-263,30A
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.26 грн
10+118.17 грн
100+92.10 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STR60100CB_R2_00001 STR60100CB.pdf
STR60100CB_R2_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 100V 30A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+68.73 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
STR60100CB_R2_00001 STR60100CB.pdf
STR60100CB_R2_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 100V 30A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 2653 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+201.37 грн
10+125.61 грн
100+86.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMB055N08NS1_R2_00601 PSMB055N08NS1.pdf
PSMB055N08NS1_R2_00601
Виробник: Panjit International Inc.
Description: 80V/ 5.5MOHM / MV MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMB055N08NS1_R2_00601 PSMB055N08NS1.pdf
PSMB055N08NS1_R2_00601
Виробник: Panjit International Inc.
Description: 80V/ 5.5MOHM / MV MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+145.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STZ23C5V6_R1_00001 STZ23C5V6.pdf
STZ23C5V6_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT ZENER DIODES
Packaging: Tape & Reel (TR)
Tolerance: ±5.45%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
товару немає в наявності
В кошику  од. на суму  грн.
STZ23C5V6_R1_00001 STZ23C5V6.pdf
STZ23C5V6_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT ZENER DIODES
Packaging: Cut Tape (CT)
Tolerance: ±5.45%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+19.73 грн
21+15.51 грн
100+8.22 грн
500+5.07 грн
1000+3.45 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AZ23C5V6_R1_00001 AZ23C2V4_SERIES.pdf
AZ23C5V6_R1_00001
Виробник: Panjit International Inc.
Description: DUAL SURFACE MOUNT ZENER DIODES
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
товару немає в наявності
В кошику  од. на суму  грн.
AZ23C5V6_R1_00001 AZ23C2V4_SERIES.pdf
AZ23C5V6_R1_00001
Виробник: Panjit International Inc.
Description: DUAL SURFACE MOUNT ZENER DIODES
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+20.55 грн
20+16.23 грн
100+8.63 грн
500+5.33 грн
1000+3.62 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
AZ23C5V6P_R1_00001 AZ23C2V4_SERIES.pdf
AZ23C5V6P_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT ZENER DIODES
Packaging: Tape & Reel (TR)
Tolerance: ±5.45%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
товару немає в наявності
В кошику  од. на суму  грн.
AZ23C5V6P_R1_00001 AZ23C2V4_SERIES.pdf
AZ23C5V6P_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT ZENER DIODES
Packaging: Cut Tape (CT)
Tolerance: ±5.45%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
на замовлення 1978 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+18.90 грн
22+14.80 грн
100+7.84 грн
500+4.84 грн
1000+3.29 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
1.5SMC250CA_R1_00001 1.5SMC_SERIES.pdf
1.5SMC250CA_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 214VWM 344VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC250CA_R1_00001 1.5SMC_SERIES.pdf
1.5SMC250CA_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 214VWM 344VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4465AP-AU_R2_000A1 PJQ4465AP-AU.pdf
PJQ4465AP-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4465AP-AU_R2_000A1 PJQ4465AP-AU.pdf
PJQ4465AP-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.53 грн
10+37.20 грн
100+25.52 грн
500+18.94 грн
1000+17.29 грн
2000+15.89 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PJQ4443P-AU_R2_000A1 PJQ4443P-AU.pdf
PJQ4443P-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4443P-AU_R2_000A1 PJQ4443P-AU.pdf
PJQ4443P-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
на замовлення 1002 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+79.73 грн
10+67.43 грн
100+51.72 грн
500+38.37 грн
1000+30.70 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
PJQ4441P-AU_R2_000A1 PJQ4441P-AU.pdf
PJQ4441P-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4441P-AU_R2_000A1 PJQ4441P-AU.pdf
PJQ4441P-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+85.48 грн
10+51.21 грн
100+33.52 грн
500+24.33 грн
1000+22.03 грн
2000+20.10 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PJQ4404P-AU_R2_000A1 PJQ4404P-AU.pdf
PJQ4404P-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4404P-AU_R2_000A1 PJQ4404P-AU.pdf
PJQ4404P-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3026 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+47.67 грн
10+39.10 грн
100+27.21 грн
500+19.94 грн
1000+16.21 грн
2000+14.49 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PJQ4441P_R2_00001 PJQ4441P.pdf
PJQ4441P_R2_00001
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4441P_R2_00001 PJQ4441P.pdf
PJQ4441P_R2_00001
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4404P_R2_00001 PJQ4404P.pdf
PJQ4404P_R2_00001
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+13.17 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
PJQ4404P_R2_00001 PJQ4404P.pdf
PJQ4404P_R2_00001
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+48.49 грн
11+31.42 грн
100+21.43 грн
500+15.83 грн
1000+14.42 грн
2000+13.22 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PJQ4403P_R2_00001 PJQ4403P.pdf
PJQ4403P_R2_00001
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+14.95 грн
10000+13.83 грн
15000+13.25 грн
25000+11.84 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
PJQ4403P_R2_00001 PJQ4403P.pdf
PJQ4403P_R2_00001
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
на замовлення 36229 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+48.49 грн
10+35.62 грн
100+24.35 грн
500+17.99 грн
1000+14.86 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PJQ4446P-AU_R2_000A1 PJQ4446P-AU.pdf
PJQ4446P-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4446P-AU_R2_000A1 PJQ4446P-AU.pdf
PJQ4446P-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+63.29 грн
10+53.27 грн
100+36.91 грн
500+28.93 грн
1000+24.62 грн
2000+21.93 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
UF2B_R1_00001 UF2A_SERIES.pdf
UF2B_R1_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 100V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+10.37 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
UF2B_R1_00001 UF2A_SERIES.pdf
UF2B_R1_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 100V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.88 грн
15+22.32 грн
100+11.26 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMBJ90A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ90A_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 90VWM 146VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ90A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ90A_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 90VWM 146VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.14 грн
10+32.45 грн
100+22.26 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
P6SMBJ90AS_R1_00001 P6SMB_SERIES.pdf
P6SMBJ90AS_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 90VWM 147VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 147V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ90AS_R1_00001 P6SMB_SERIES.pdf
P6SMBJ90AS_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 90VWM 147VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 147V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5462A_R2_00001 PJQ5462A.pdf
PJQ5462A_R2_00001
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5462A_R2_00001 PJQ5462A.pdf
PJQ5462A_R2_00001
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
на замовлення 2846 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+78.90 грн
10+47.49 грн
100+30.95 грн
500+22.39 грн
1000+20.25 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
PJQ5462A-AU_R2_000A1 PJQ5462A-AU.pdf
PJQ5462A-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5462A-AU_R2_000A1 PJQ5462A-AU.pdf
PJQ5462A-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5336 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+129.04 грн
10+79.15 грн
100+52.91 грн
500+39.11 грн
1000+35.71 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
P6SMBJ22CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ22CA_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ22CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ22CA_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
STR60100CT_T0_00001 STR60100CT.pdf
STR60100CT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOT 100V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+198.08 грн
50+94.55 грн
100+85.16 грн
500+64.48 грн
1000+59.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MMSZ5234B-AU_R1_000A1 MMSZ5234B-AU_SERIES.pdf
MMSZ5234B-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MMSZ5234B-AU_R1_000A1 MMSZ5234B-AU_SERIES.pdf
MMSZ5234B-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+19.73 грн
21+15.75 грн
100+8.37 грн
500+5.16 грн
1000+3.51 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
MMSZ5234BS_R1_00001
MMSZ5234BS_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
товару немає в наявності
В кошику  од. на суму  грн.
MMSZ5234BS_R1_00001
MMSZ5234BS_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
на замовлення 4499 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+15.62 грн
30+10.68 грн
100+5.77 грн
500+4.26 грн
1000+2.95 грн
2000+2.45 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
MMBZ5246B_R1_00001 MMBZ5221B_SERIES.pdf
MMBZ5246B_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
товару немає в наявності
В кошику  од. на суму  грн.
MMBZ5246B_R1_00001 MMBZ5221B_SERIES.pdf
MMBZ5246B_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
на замовлення 2736 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.97 грн
34+9.50 грн
100+5.11 грн
500+3.77 грн
1000+2.62 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
ER1006CT_T0_00001 ER1000CT_SERIES.pdf
ER1006CT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARRAY GP 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 1890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.64 грн
10+51.37 грн
100+35.58 грн
500+27.90 грн
1000+23.74 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MURC4J_R1_00001 MURC4J_SERIES.pdf
MURC4J_R1_00001
Виробник: Panjit International Inc.
Description: SMC, SUPER
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MURC4J_R1_00001 MURC4J_SERIES.pdf
MURC4J_R1_00001
Виробник: Panjit International Inc.
Description: SMC, SUPER
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 706 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.53 грн
10+34.19 грн
100+22.08 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MURC4JI_R1_00001 MURC4JI_SERIES.pdf
MURC4JI_R1_00001
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MURC4JI_R1_00001 MURC4JI_SERIES.pdf
MURC4JI_R1_00001
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+55.07 грн
10+33.00 грн
100+21.27 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SBT10120UFCT_T0_00001
SBT10120UFCT_T0_00001
Виробник: Panjit International Inc.
Description: EXTREME LOW VF SCHOTTKY BARRIER
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 120 V
товару немає в наявності
В кошику  од. на суму  грн.
MMSZ5262B_R1_00001 MMSZ5221B_SERIES.pdf
MMSZ5262B_R1_00001
Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.72 грн
6000+2.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MMSZ5262B_R1_00001 MMSZ5221B_SERIES.pdf
MMSZ5262B_R1_00001
Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
на замовлення 8940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+15.62 грн
24+13.46 грн
100+7.34 грн
500+4.24 грн
1000+2.89 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 19 38 57 76 95 114 133 142 143 144 145 146 147 148 149 150 151 152 171 190 195  [ Наступна Сторінка >> ]