PJQ5465A_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 5+ | 65.72 грн |
| 10+ | 39.55 грн |
| 100+ | 25.77 грн |
| 500+ | 18.62 грн |
| 1000+ | 16.83 грн |
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Технічний опис PJQ5465A_R2_00001 Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN5060-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції PJQ5465A_R2_00001
| Фото | Назва | Виробник | Інформація |
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PJQ5465A_R2_00001 | Виробник : Panjit International Inc. |
Description: 60V P-CHANNEL ENHANCEMENT MODE M Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
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PJQ5465A-R2-00001 | Виробник : Panjit |
MOSFETs DFN5060-8L/MOS/DFN/NFET-60FKMP |
товару немає в наявності |