10A10G Yangjie Electronic Technology
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1072+ | 11.39 грн |
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Технічний опис 10A10G Yangjie Electronic Technology
Description: DIODE GEN PURP 1KV 10A R-6, Packaging: Tape & Box (TB), Package / Case: R-6, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: R-6, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V.
Інші пропозиції 10A10G
| Фото | Назва | Виробник | Інформація |
Доступність |
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10A10G | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
 Description: DIODE GEN PURP 1KV 10A R-6Packaging: Bulk Package / Case: R-6, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V |
товару немає в наявності |
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10A10G | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1KV 10A R-6 Packaging: Tape & Box (TB) Package / Case: R-6, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V |
товару немає в наявності |